CN108538926A - InGaAs bases MOS capacitor in flexible substrate and production method - Google Patents
InGaAs bases MOS capacitor in flexible substrate and production method Download PDFInfo
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- CN108538926A CN108538926A CN201810319831.3A CN201810319831A CN108538926A CN 108538926 A CN108538926 A CN 108538926A CN 201810319831 A CN201810319831 A CN 201810319831A CN 108538926 A CN108538926 A CN 108538926A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
Abstract
The invention discloses the InGaAs bases MOS capacitors and production method in a kind of flexible substrate, can not be applied to Flexible Environment mainly for solving the problem of that the device of traditional III V materials can be only applied to rigid planar environment.It includes substrate (1), cathodic metal electrode (2), semiconductor function film layer (3), oxide layer (4) and anode metal electrodes (5) from bottom to top, and wherein substrate uses flexible substrate；Semiconductor film layer is used constitutes mechanical balance structure function layer by InGaAs, GaAs and InGaAs three-layer thin-film layer.The present invention has good extension and bendability, can be used for including flexible display, flexible electronic label, artificial-muscle and bio-signal sensor while high with working frequency.
Description
Technical field
The invention belongs to technical field of semiconductor device, more particularly to a kind of flexibility InGaAs base MOS capacitors can be used for
The working environment of bending.
Background technology
Silicon-based complementary metal oxide semiconductor CMOS technology is that current semi-conductor industry digital integrated electronic circuit industry is flourishing
The prime movers of development, semiconductor industry development 50 for many years, under the guidance of Moore's Law, can collect in unit chip
At number of transistors be continuously increased, the characteristic size of cmos device constantly reduces, and corresponding device performance is continuously improved.However
It is limited by the physical characteristic of silicon materials itself, the continuous diminution of size leads to the increase of device power consumption and the reduction of reliability,
Moore's Law will reach its limit.InGaAs base semiconductors field device has channel material electron mobility height, electronics saturation
Speed is big, subthreshold swing is precipitous, driving current is big, energy gap can with flexible modulation and it is low in energy consumption the advantages that, be expected into
For the functional unit of next-generation ultrahigh-speed and low-power-consumption circuit structure.
Flexible electronic is considered as the future of electronics industry, because of unique flexible and ductility and the height of flexible electronic
Effect, low cost manufacturing technique have wide application prospect, as flexible electronic is shown in fields such as information, the energy, medical treatment, national defence
Device, Electronic Paper, electronic tag, thin-film solar cell panel, flexible remote supervisory and control(ling) equipment etc..Flexible electronic is sometimes or even can
Wearing, the vital sign data of the mankind is provided, the extensive research of all circles such as academic, business is also therefore received.Polymer flexible
Discrete component such as capacitance and inductance on property matrix, have successfully made and in relatively low operation at frequencies, but
It is that these devices can not be integrated with flexible thin-film transistor on monolithic.Therefore, flexible electronic member device under high frequency is studied
The working characteristics of part is necessary, and capacitance is essential component in substantially all integrated circuits.
III traditional-V device preparation technology costs are higher, and device usually requires to grow very thick epitaxial layer as functional layer
The support of material, thicker support layer material make the manufacturing cost of iii-v device higher.If can will be high performance
InGaAs base devices are combined with lower-cost flexible material platform, can not only substantially reduce industrial cost, but also can realize height
The flexible of performance inorganic device makes microelectronic component and integrated circuit be adapted to on-plane surface working environment, has
Higher portability and intelligence are suitable for broader application field.
The Ali Javey team of Univ. of California, Berkeley in 2012 is integrated on a silicon substrate using nanometer film transfer technique
InAs MOSFET, cutoff frequency are up to 165.5GHz, are the highest cutoff frequencies realized on silicon technology platform at present；It utilizes
The InAs MOSFET cutoff frequencies using plastics as substrate of similar method, development are up to 105GHz, report before this
10 times of the grapheme material flexible device cutoff frequency of " most fast ".In recent years by introducing ALD technique, flexible compound base
The research of device achieves a large amount of gratifying progress, but since the material composition of compound semiconductor surface complexity causes high K to be situated between
Matter/III-V interface state densities are excessive, and source/drain region ohmic contact resistance is big, III-V devices and other materials technique platform compatibility
Difference, flexible substrate can not be handled through high-temperature technology, the various problems such as III-V races semiconductor devices inflexibility so that based on soft
The performance of the device of property substrate cannot be played to the greatest extent, seriously affect device electrology characteristic.
Invention content
It is an object of the invention to the deficiency for above-mentioned prior art, the InGaAs bases in a kind of flexible substrate are provided
MOS capacitor and production method avoid flexible substrate from being handled by high-temperature technology to reduce ohmic contact resistance, and realization is based on
The bending of the MOS capacitor of III-V group semi-conductor material.
To achieve the above object, the InGaAs base MOS capacitors in flexible substrate of the present invention, from bottom to top include substrate,
Cathodic metal electrode, semiconductor film layer, oxide layer and anode metal electrodes, it is characterised in that：
Substrate, using rectangular flexible substrate；
Semiconductor film layer is laminated plus constitutes using by InGaAs, GaAs and InGaAs three-layer thin-film, to ensure device
Ductility and bendability.
Further, the thickness of the polyethylene terephtalate film is 0.2~0.4mm.
Further, the thickness of first layer InGaAs films is 10~15nm, the thickness of second layer GaAs films is 250~
The thickness of 300nm, third layer InGaAs films are identical as the thickness of the first layer film.
To achieve the above object, the present invention prepares the InGaAs base MOS capacitor methods in flexible substrate, including following step
Suddenly：
1) epitaxial growth AlGaAs sacrificial layers and InGaAs/GaAs/InGaAs semiconductive thin films successively on gaas substrates
Layer；
2) using reaction coupled plasma etch technology ICP, in InGaAs/GaAs/InGaAs semiconductor film layers
Etching through hole is to sacrificial layer；
3) dilute HF acid wet etching sacrificial layer is used so that InGaAs/GaAs/InGaAs semiconductor film layers rely on weak model
De Waersili is adhered on gaas substrates；
4) the spin coating photoresist in film layer is lithographically formed cathode plate region, using electron beam evaporation technique in nanometer film
Upper growth cathodic metal plate Ti/Pd/Au removes excess metal, in 300 ± 20 DEG C of temperature using metal-stripping lift-off techniques
The lower 1min that anneals of degree, forms Ohmic contact；
5) semiconductor film layer with cathode sheetmetal is transferred to and is coated in the flexible substrate of viscous coating, made
Adhesive layer, by post bake, completes connection under ultraviolet irradiation；
6) the spin coating photoresist in the semiconductive thin film layer surface after overturning transfers, is lithographically formed oxidation layer region, uses
Atomic layer deposition ALD growth thickness is the Al of 100~150nm2O3Oxide layer；
7) the spin coating photoresist in the oxide layer grown, is lithographically formed anode plate region, using electron beam evaporation technique
Evaporated metal Ti/Au successively, then excess metal is removed using metal-stripping lift-off techniques, form anode plate metal structure；
8) oxide layer and semiconductor film layer outside dry etching anode plate are utilized, part cathode plate is exposed, as connecing
Touched electrode forms the InGaAs base MOS capacitors in flexible substrate.
The present invention compared with prior art, has the following advantages that：
1. present invention employs III-V races InGaAs materials as functional layer, there is channel material compared to common Si base devices
Electron mobility is high, electron saturation velocities are big, subthreshold swing is precipitous and the characteristics such as low in energy consumption, be suitably applied low-power consumption with
And high frequency etc. is multi-field.
2. the present invention uses InGaAs/GaAs/InGaAs three-layer semiconductor film layers, primer and top layer channel material
Type, component and thickness are identical, and entire film layer constitutes mechanical balance structure, makes device in transfer process, partly leads
Thin-film layers are not in the case where flexural deformation is even rolled, and have ensured that the technique after transfer is normally carried out；
3. the present invention before semiconductor film layer is transferred to flexible substrate, carries out thermal anneal process, both reduces Europe
Nurse contact resistance, and avoid operating flexible substrate in hot environment；
4. present invention employs overturning transfer techniques by InGaAs semiconductive thin film collective transfers to flexible substrate, make
It is simple for process, high yield rate, while making device that there is good bendability, it can be applied to a variety of non-open and flat environment.
Description of the drawings
Fig. 1 is the InGaAs base MOS capacitor structure charts in flexible substrate of the present invention；
Fig. 2 is the flow diagram for the InGaAs base MOS capacitors that the present invention makes in flexible substrate.
Specific implementation mode
Below in conjunction with attached drawing, the invention will be further described.
Referring to Fig.1, device structure of the invention includes flexible substrate 1, cathodic metal electrode 2, semiconductive thin film from bottom to top
Layer 3, oxide layer 4 and anode metal electrodes 5, wherein flexible substrate 1, including polyethylene terephtalate substrate, polyamides
Any one in imines PI or polydimethylsiloxane；Semiconductor film layer 3 is made of three-layer thin-film, and wherein bottom is
InGaAs film layers, middle layer are GaAs film layers, and top layer is InGaAs film layers, and oxide layer 4 is located at top film InGaAs
The upper surface of.The InGaAs/GaAs/InGaAs three-layer semiconductor film layers, form a mechanical balance structure, when device extension
After structure carries out " cut-out " technique, this semiconductor film layer is not in the case where flexural deformation is even rolled, after ensure that
Continuous transfer, these critical process of photoetching are normally carried out.
The function of the three-layer semiconductor film layer and thickness difference, the wherein InGaAs of top layer are channel layer, thickness
For 10~15nm, by the layer can with self-healing its with it is GaAs layers intermediate between due to stress caused by lattice mismatch, no
Dislocation or defect can occur；Intermediate GaAs layers are buffer layers, and thickness is 150~300nm, for offer from substrate to top layer
InGaAs layers of transition absorbs substrate to the impurity of external diffusion and substrate defects is prevented to extend to the ditch in InGaAs layers of top layer
Road, to ensure that the quality of the epitaxial film materials neighbouring with raceway groove；The InGaAs of bottom is the mechanics of semiconductor thin film structure
Balance layer, the layer are identical with quilting material type, component and thickness.
With reference to the method that Fig. 2, the present invention make the InGaAs base MOS capacitors in flexible substrate, following three kinds of realities are provided
Apply example：
Embodiment 1 makes using ethylene terephthalate PET as the InGaAs base MOS capacitors of substrate.
Step 1, epitaxial wafer is pre-processed, such as 2 (a).
(1.1) epitaxial growth AlGaAs sacrificial layers and InGaAs/GaAs/InGaAs semiconductors successively on GaAs epitaxial wafers
Film layer；
(1.2) acetone, isopropanol and deionized water is used to rinse GaAs epitaxial wafers surface successively, the attachment of removal surface
Organic pollution；
(1.3) the dilute HF acid rinses epitaxial wafer surface for using 1%, removes oxide.
Step 2, dry etching nano thin-film, such as 2 (b).
(2.1) gluing photoresist on epitaxial wafer after the pre-treatment, and contact exposure is used, form the light of nano thin-film
Needle drawing case；
(2.2) using perceptual coupled plasma etch technology ICP, in InGaAs/GaAs/InGaAs semiconductor film layers
For middle etching through hole to AlGaAs sacrificial layers, the length of side of etched hole is 5 μm, and the spacing of two neighboring etched hole is 50 μm.ICP voltages
Source power is 500W, and RF power is 50W, chamber pressure 3mTorr, BCl3Air flow rate be 7sccm, the air flow rate of Ar
For 3sccm, etch period is 2 minutes.
Step 3, wet etching AlGaAs sacrificial layers, such as 2 (c).
(3.1) it uses and is cleaned by ultrasonic under oxygen reactive ion etching and acetone, isopropanol and deionized water low-power, remove
Photoresist after ICP etchings；
(3.2) dilute HF acid wet etching AlGaAs sacrificial layers are used 2 hours so that InGaAs/GaAs/InGaAs semiconductors
Film layer adheres on gaas substrates by weak van der waals force.
Step 4, cathodic metal electrode is deposited, such as 2 (d).
(4.1) epitaxial wafer after wet etching is immersed into deionized water, is dried up after taking-up and with nitrogen；
(4.2) the photoetching development liquid MF321 processing film layers back side, the etching reaction residual at the cleaning film layer back side are used
Object；
(4.3) electron beam evaporation technique is used to deposit cathodic metal Ti/Pt/Au, thickness difference in thin-film surface successively
For 40nm, 40nm and 200nm；
(4.4) it uses stripping technology lift-off to remove excess metal, forms cathodic metal electrode；
(4.5) anneal 30s under the conditions of 420 DEG C, forms the Ohmic contact of cathodic metal electrode..
Step 5, transfer film layer is overturn, such as 2 (e).
(5.1) SU-8 glue is applied on ethylene terephthalate PET substrate, and the flexible substrate with viscous coating is made；
(5.2) using the flexible substrate with viscous coating, viscous grown on top of removing has cathodic metal electric from epitaxial wafer
The semiconductor film layer of pole；
(5.3) viscous coating after ultraviolet irradiation by photocuring, by the function nano layer with cathodic metal electrode
It fixes on flexible substrates.
Step 6, deposited oxide layer, such as 2 (f).
(6.1) flexible substrate and film layer are immersed in 10% NH42 minutes in OH solvents, passivation film layer surface, then
It is rinsed with deionized water, is dried up with nitrogen；
(6.2) in the upper surface spin coating photoresist AZ5214 of film layer, exposed photoresist layer forms oxidation layer pattern；
(6.3) atomic layer deposition strategy ALD is used to deposit the Al of 100nm on thin-film surface2O3Medium；
(6.4) stripping technology lift-off is used to remove extra Al2O3Medium forms the oxide layer of mos capacitance.
Step 7, anode metal electrodes are deposited, such as 2 (g).
(7.1) in the upper surface spin coating photoresist AZ5214 of oxide layer, exposed photoresist layer forms pole plate figure；
(7.2) electron beam evaporation technique is utilized to deposit metal Ti/Au in oxide layer layer surface successively, thickness is respectively 20nm
And 200nm；
(7.3) it uses metal lift-off material lift-off to remove excess metal, forms anode metal electrodes.
Step 8, cathodic metal electrode is exposed to the open air, such as 2 (h).
(8.1) in the upper surface spin coating photoresist AZ5214 of oxide layer, exposure exposes cathode plate figure；
(8.2) dry etching is utilized, cathodic metal electrode is exposed；
(8.3) flexible substrate and functional layer with metal electrode are integrally put into developer solution and are impregnated, it is extra to wash away
Photoresist；
So far it completes using ethylene terephthalate PET as the making of the InGaAs base MOS capacitors of substrate.
Embodiment 2 makes using polydimethylsiloxane as the InGaAs base MOS capacitors of substrate
Step 1 pre-processes epitaxial wafer.
The specific implementation of this step is identical as the step 1 of embodiment 1.
Step 2, dry etching nano thin-film.
The specific implementation of this step is identical as the step 2 of embodiment 1, and chamber pressure is only changed into 5mTorr, will
BCl3Air flow rate change into 10sccm, the air flow rate of Ar is changed into 5sccm.
Step 3, AlGaAs layers of wet etching.
The specific implementation of this step is identical as the step 3 of embodiment 1.
Step 4 deposits cathodic metal electrode.
Epitaxial wafer after wet etching is immersed deionized water and is dried up with nitrogen by (4a)；
(4b) uses the photoetching development liquid MF321 processing film layers back side, the etching reaction residue at the cleaning film layer back side；
(4c) deposits cathodic metal Ti/Pt/Au in thin-film surface successively using electron beam evaporation technique, and thickness is respectively
40nm, 2nm and 200nm；
(4d) removes excess metal using stripping technology lift-off, forms cathodic metal electrode；
(4e) forms the Ohmic contact of cathodic metal electrode in 420 DEG C of conditions annealing 60s.
Step 5 overturns transfer film layer.
(5a) applies SU-8 glue on polydimethylsiloxane substrate, and the flexible substrate with viscous coating is made；
(5b) takes grown on top to have cathodic metal electric using the polydimethylsiloxane substrate with viscous coating is viscous
The semiconductor film layer of pole；
(5c) viscous coating, by photocuring, the function nano layer with cathodic metal electrode is consolidated after ultraviolet irradiation
Determine on flexible substrates.
Step 6, deposited oxide layer.
Flexible substrate and film layer are immersed in 10% NH by (6a)42 minutes in OH solvents, passivation film layer surface, then
It is rinsed with deionized water, is dried up with nitrogen；
(6b) in the upper surface spin coating photoresist AZ5214 of film layer, exposed photoresist layer, which is formed, aoxidizes layer pattern；
(6c) deposits the HfO of 100nm using atomic layer deposition strategy ALD on thin-film surface2Medium；
(6d) removes extra HfO using metal lift-off material lift-off2Medium forms the oxide layer of mos capacitance.
Step 7 deposits anode metal electrodes.
(7a) is in the upper surface spin coating photoresist AZ5214 of oxide layer, exposed photoresist layer formation pole plate figure；
(7b) deposits metal Ti/Au in oxide layer layer surface successively using electron beam evaporation technique, and thickness is respectively 40nm
And 200nm；
(7c) removes excess metal using metal lift-off material lift-off, forms anode metal electrodes.
Step 8 exposes cathodic metal electrode to the open air, completes the InGaAs bases MOS electricity using polydimethylsiloxane as substrate
The making of container.
The specific implementation of this step is identical as the step 8 of embodiment 1.
Embodiment 3 makes using polyimides PI as the InGaAs base MOS capacitors of substrate
Step A prepares epitaxial wafer.
The specific implementation of this step is identical as the step 1 of embodiment 1.
Step B, dry etching nano thin-film.
The specific implementation of this step is identical as the step 2 of embodiment 1, and chamber pressure is only changed into 7mTorr, will
BCl3Air flow rate change into 13sccm, the air flow rate of Ar is changed into 7sccm.
Step C, AlGaAs layers of wet etching.
The specific implementation of this step is identical as the step 3 of embodiment 1.
Step D deposits cathodic metal electrode.
The epitaxial wafer after wet etching is first immersed into deionized water and is dried up with nitrogen；Reuse photoetching development liquid MF321
Handle the film layer back side, the etching reaction residue at the cleaning film layer back side；Then use electron beam evaporation technique successively thin
Film surface deposits cathodic metal Ti/Au, and thickness is respectively 40nm and 200nm；Then using stripping technology lift-off strippings
Excess metal forms cathodic metal electrode；Finally in 420 DEG C of conditions annealing 15s, the Ohmic contact of cathodic metal electrode is formed.
Step E overturns transfer film layer.
SU-8 glue is applied first on polyimides PI substrates, and the flexible substrate with viscous coating is made；It reuses and carries
The flexible substrate of viscous coating glues the semiconductor film layer for taking grown on top to have cathodic metal electrode from epitaxial wafer；Finally glue
Function nano layer with cathodic metal electrode, by photocuring, is fixed on flexible substrate by property coating after ultraviolet irradiation
On.
Step F, deposited oxide layer.
Flexible substrate and film layer are first immersed in 10% NH42 minutes in OH solvents, passivation film layer surface, then use
Deionized water is rinsed, and is dried up with nitrogen；Then in the upper surface spin coating photoresist AZ5214 of film layer, exposed photoresist layer is formed
Aoxidize layer pattern；Atomic layer deposition strategy ALD is used to deposit the HfAlO media of 100nm on thin-film surface later；Finally use
Metal lift-off material lift-off removes extra HfAlO media, forms the oxide layer of mos capacitance.
Step G deposits anode metal electrodes.
First in the upper surface spin coating photoresist AZ5214 of oxide layer, exposed photoresist layer forms pole plate figure；Then it utilizes
Electron beam evaporation technique is respectively the metal Ti/Au of 60nm and 200nm in oxide layer layer surface deposition thickness successively；Finally use
Metal lift-off material lift-off removes excess metal, forms anode metal electrodes.
Step H exposes cathodic metal electrode to the open air, completes using polyimides PI as the system of the InGaAs base MOS capacitors of substrate
Make.
The specific implementation of this step is identical as the step 8 of embodiment 1.
Foregoing description is only three embodiments of the present invention, does not constitute any limitation of the invention, it is clear that anyone
Can design according to the invention and scheme make change, such as to the replacement of material and the change of parameter, but these
Within the protection domain of invention.
Claims (8)
1. the InGaAs base MOS capacitors in a kind of flexible substrate, include from bottom to top substrate (1), cathodic metal electrode (2),
Semiconductor film layer (3), oxide layer (4) and anode metal electrodes (5), it is characterised in that：
Substrate (1), using rectangular flexible substrate；
Semiconductor film layer (3) is laminated plus constitutes using by InGaAs, GaAs and InGaAs three-layer thin-film, to ensure device
Ductility and bendability.
2. device according to claim 1, it is characterised in that：The thickness of polyethylene terephtalate film is
0.2~0.4mm.
3. device according to claim 1, it is characterised in that：The thickness of first layer InGaAs films is 10~15nm, the
The thickness of two layers of GaAs films is 250~300nm, and the thickness of third layer InGaAs films is identical as the thickness of the first layer film.
4. the InGaAs base MOS capacitor preparation methods in a kind of flexible substrate, include the following steps：
1) epitaxial growth AlGaAs sacrificial layers and InGaAs/GaAs/InGaAs semiconductor film layers successively on gaas substrates；
2) it using reaction coupled plasma etch technology ICP, is etched in InGaAs/GaAs/InGaAs semiconductor film layers
Through-hole is to sacrificial layer；
3) dilute HF acid wet etching sacrificial layer is used so that InGaAs/GaAs/InGaAs semiconductor film layers rely on weak Fan Dewa
Er Sili is adhered on gaas substrates；
4) the spin coating photoresist in film layer is lithographically formed cathode plate region, raw in nanometer film using electron beam evaporation technique
Long cathodic metal plate Ti/Pd/Au removes excess metal, at a temperature of 300 ± 20 DEG C using metal-stripping lift-off techniques
Anneal 1min, forms Ohmic contact；
5) semiconductor film layer with cathode sheetmetal is transferred to and is coated in the flexible substrate of viscous coating, make stickiness
Layer, by post bake, completes connection under ultraviolet irradiation；
6) the spin coating photoresist in the semiconductive thin film layer surface after overturning transfers, is lithographically formed oxidation layer region, using atom
The Al that layer deposit ALD growth thickness is 100~150nm2O3Oxide layer；
7) the spin coating photoresist in the oxide layer grown, is lithographically formed anode plate region, successively using electron beam evaporation technique
Evaporated metal Ti/Au, then excess metal is removed using metal-stripping lift-off techniques, form anode plate metal structure；
8) oxide layer and semiconductor film layer outside dry etching anode plate are utilized, part cathode plate is exposed, is used as contact electricity
Pole forms the InGaAs base MOS capacitors in flexible substrate.
5. according to the method described in claim 4, the reaction coupled plasma etch technology ICP wherein in step 2), work
Skill condition is as follows：
ICP voltage source power is 500W；
RF power is 50W；
Chamber pressure is 3~7mTorr；
BCl3Air flow rate be 7~13sccm；
The air flow rate of Ar is 3~7sccm.
6. according to the method described in claim 4, the thickness range of the metal electrode Ti/Pt/Au wherein in step 4) is as follows：
The thickness of Ti is 30~50nm；
The thickness of Pt is 30~50nm；
The thickness of Au is 150~250nm.
7. according to the method described in claim 4, the thickness range of the metal electrode Ti/Au wherein in step 4) is as follows：
The thickness of Ti is 10~30nm；
The thickness of Au is 150~250nm.
8. according to the method described in claim 4, the flexible substrate wherein in step 5), including polyethylene terephthalate
Any one in PET substrate, polyimides PI or polydimethylsiloxane.
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| CN201711469277 | 2017-12-29 | ||
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109341727A (en) * | 2018-10-25 | 2019-02-15 | 北京机械设备研究所 | A kind of flexible extensible formula sensor |
| CN110514700A (en) * | 2019-09-27 | 2019-11-29 | 西安电子科技大学 | A kind of copper oxide and cobaltosic oxide heterogeneous structural nano line composite sensitive material, ethylene glycol sensor and preparation method |
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| WO2017008293A1 (en) * | 2015-07-16 | 2017-01-19 | 中国科学院微电子研究所 | Composite grating medium layer applicable to group iii-v substrate and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109341727A (en) * | 2018-10-25 | 2019-02-15 | 北京机械设备研究所 | A kind of flexible extensible formula sensor |
| CN110514700A (en) * | 2019-09-27 | 2019-11-29 | 西安电子科技大学 | A kind of copper oxide and cobaltosic oxide heterogeneous structural nano line composite sensitive material, ethylene glycol sensor and preparation method |
| CN110514700B (en) * | 2019-09-27 | 2021-09-07 | 西安电子科技大学 | Copper oxide and cobaltosic oxide heterostructure nanowire composite sensitive material, ethylene glycol sensor and preparation method |
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