CN108538875B - Light path control structure, pixel structure, preparation method of pixel structure and display panel - Google Patents

Light path control structure, pixel structure, preparation method of pixel structure and display panel Download PDF

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CN108538875B
CN108538875B CN201810294500.9A CN201810294500A CN108538875B CN 108538875 B CN108538875 B CN 108538875B CN 201810294500 A CN201810294500 A CN 201810294500A CN 108538875 B CN108538875 B CN 108538875B
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path control
light
scattering
quantum dot
pixel
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CN108538875A (en
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赵德江
郝运
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BOE Technology Group Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/50OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
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    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/508Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
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    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/38Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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Abstract

The disclosure provides a light path control structure, a pixel structure, a manufacturing method of the pixel structure and a display panel, and relates to the technical field of display. The light path control structure comprises a pixel defining layer and a plurality of light path control units positioned in an area defined by the pixel defining layer, wherein a scattering unit is arranged in at least one light path control unit in the plurality of light path control units; wherein the scattering unit comprises one or more scattering lenses for scattering incident light. The present disclosure can secure the optical path of light in the quantum dot layer while reducing the thickness of the quantum dot layer.

Description

Light path control structure, pixel structure, preparation method of pixel structure and display panel
Technical Field
The present disclosure relates to the field of display technologies, and in particular, to an optical path control structure, a pixel structure, a manufacturing method thereof, and a display panel.
Background
Quantum Dot (QD) display devices have the advantage of a wide color gamut, and the color spectrum is more continuous because they can modulate the emission spectrum according to the particle size of the Quantum Dot material. The current application of quantum dot technology in the display field mainly includes the following two kinds: one is to adopt the quantum dot technology in the backlight source of the liquid crystal display, but it can not well exert the advantages of the quantum dot, and at the same time, it brings the disadvantages of high power consumption and high cost; the other method is to replace the color film layer with the quantum dot material layer and realize color display in a light color conversion mode, but when the quantum dot material layer is used for replacing the color film layer, a polarizer is required to be arranged in the color film layer, and the process difficulty is high, so the realization is difficult.
It is to be noted that the information disclosed in the above background section is only for enhancement of understanding of the background of the present disclosure, and thus may include information that does not constitute prior art known to those of ordinary skill in the art.
Disclosure of Invention
The present disclosure provides an optical path control structure, a pixel structure, a method for manufacturing the same, and a display panel, so as to provide a novel quantum dot display device, which can reduce the thickness of a quantum dot layer and ensure the optical path of light in the quantum dot layer.
Additional features and advantages of the disclosure will be set forth in the detailed description which follows, or in part will be obvious from the description, or may be learned by practice of the disclosure.
According to one aspect of the present disclosure, there is provided an optical path control structure, including a pixel defining layer and a plurality of optical path control units located within an area defined by the pixel defining layer, at least one of the optical path control units having a scattering unit therein; wherein the scattering unit comprises one or more scattering lenses for scattering incident light.
In an exemplary embodiment of the present disclosure, the diffusion lens includes a recess at a light exit side, and a shape of the recess includes a semicircular prism and/or a hemispherical prism.
In an exemplary embodiment of the present disclosure, the deepest distance of the concave surface of the scattering lens is between 2 and 4 micrometers.
According to an aspect of the present disclosure, there is provided a pixel structure comprising the above-mentioned light path control structure and a color modulation layer located at a light emitting side of the light path control structure; the color modulation layer comprises a plurality of color modulation units, at least one color modulation unit in the plurality of color modulation units is a quantum dot material layer, and the quantum dot material layer is arranged corresponding to the scattering unit in the light path control structure.
In an exemplary embodiment of the present disclosure, the pixel structure further includes a light source module, the light source module includes a plurality of light emitting units, and the plurality of light emitting units are arranged in one-to-one correspondence with the plurality of light path control units in the light path control structure.
In an exemplary embodiment of the present disclosure, the pixel structure includes a plurality of sub-pixels of different colors; the color of the light emitted by the light source module is the same as that of any sub-pixel, the color modulation unit corresponding to the sub-pixel with the same color of the light emitted by the light source module is a transparent unit, and the color modulation unit corresponding to the sub-pixel with the different color of the light emitted by the light source module is a quantum dot material layer; the color of the light emitted by the light source module is different from the colors of all the sub-pixels, and the color modulation units corresponding to the sub-pixels are quantum dot material layers.
In an exemplary embodiment of the present disclosure, the light source module further includes an encapsulation layer on a side of the light emitting unit adjacent to the light path control structure.
In an exemplary embodiment of the disclosure, the pixel structure further includes a planarization layer on a side of the color modulation layer facing away from the light path control structure.
According to an aspect of the present disclosure, a display panel is provided, which includes the pixel structure described above.
According to an aspect of the present disclosure, there is provided a method of manufacturing a pixel structure, including: forming an optical path control structure on a substrate, wherein the optical path control structure comprises a pixel defining layer and a plurality of optical path control units positioned in an area defined by the pixel defining layer, at least one of the optical path control units is provided with a scattering unit, and the scattering unit comprises one or more scattering lenses; and forming a color modulation layer on the light emitting side of the light path control structure, wherein the color modulation layer comprises a plurality of color modulation units, at least one color modulation unit in the plurality of color modulation units is a quantum dot material layer, and the quantum dot material layer is arranged corresponding to the scattering unit.
According to the light path control structure, the pixel structure, the preparation method of the light path control structure and the pixel structure, and the display panel, the scattering lens is arranged in the area defined by the pixel defining layer to serve as the scattering unit, so that on one hand, the light beam scattering effect can be achieved, the emergent angle of emergent light is increased, the visual angle of a quantum dot display device is conveniently enlarged, on the other hand, the concave part of the scattering lens can be used as the filling space of a quantum dot material, and the thickness of the quantum dot material layer is gradually reduced. Specifically, light rays corresponding to the position with the largest thickness of the quantum dot material layer are vertically emitted, the optical path of the light rays in the quantum dot material layer is the thickness of the quantum dot material layer, the light rays corresponding to the position with the reduced thickness of the quantum dot material layer are obliquely emitted due to scattering, the smaller the thickness of the quantum dot material layer is, the larger the scattering angle of the emitted light rays is, the larger the optical path of the light rays in the quantum dot material layer is, the thickness of the quantum dot material layer corresponding to the emitting position of the light rays is designed according to the deflection degree of the light rays, namely, the concave depth of the scattering lens at the position is designed, the optical path of the light rays in the quantum dot material layer can be ensured, the efficiency requirement of the quantum dot material is met, and the display of corresponding colors is convenient to realize.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure. It is to be understood that the drawings in the following description are merely exemplary of the disclosure, and that other drawings may be derived from those drawings by one of ordinary skill in the art without the exercise of inventive faculty.
Fig. 1 schematically illustrates a first schematic diagram of an optical path control structure in an exemplary embodiment of the present disclosure;
FIG. 2 schematically illustrates a second schematic diagram of an optical path control structure in an exemplary embodiment of the present disclosure;
fig. 3 schematically illustrates a third schematic diagram of an optical path control structure in an exemplary embodiment of the present disclosure;
FIG. 4 schematically illustrates a schematic diagram of light scattering in an exemplary embodiment of the disclosure;
fig. 5 schematically illustrates a ray path diagram in a quantum dot material layer in an exemplary embodiment of the present disclosure;
FIG. 6 schematically illustrates a dimensional layout of a light path control structure in an exemplary embodiment of the present disclosure;
fig. 7 schematically illustrates a printing state diagram of a quantum dot material in an exemplary embodiment of the present disclosure;
fig. 8 schematically illustrates a structural diagram of a quantum dot material layer in an exemplary embodiment of the present disclosure;
fig. 9 schematically illustrates a first schematic diagram of a pixel structure in an exemplary embodiment of the present disclosure;
fig. 10 schematically illustrates a second schematic diagram of a pixel structure in an exemplary embodiment of the disclosure;
fig. 11 schematically illustrates a light emission schematic of a quantum dot material in an exemplary embodiment of the present disclosure;
fig. 12 schematically illustrates a flow chart of a method for manufacturing a pixel structure in an exemplary embodiment of the present disclosure.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
Furthermore, the drawings are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale. The same reference numerals in the drawings denote the same or similar parts, and thus their repetitive description will be omitted. Some of the block diagrams shown in the figures are functional entities and do not necessarily correspond to physically or logically separate entities. These functional entities may be implemented in the form of software, or in one or more hardware modules or integrated circuits, or in different networks and/or processor devices and/or microcontroller devices.
The present exemplary embodiment provides a light path control structure that can be applied to a quantum dot light emitting device. As shown in fig. 1 to 3, the optical path control structure may include a pixel defining layer 10 and a plurality of optical path control units located in an area defined by the pixel defining layer 10, at least one of the optical path control units is provided with a scattering unit 20, for example, only one of the optical path control units in the optical path control structure shown in fig. 1 is provided with a scattering unit 20, two of the optical path control units in the optical path control structure shown in fig. 2 are provided with scattering units 20, and all of the optical path control units in the optical path control structure shown in fig. 3 are provided with scattering units 20. The scattering unit 20 may include one or more scattering lenses 200, and the scattering lens 200 has a concave portion on the light exit side, which may be used to scatter the incident light to obtain a divergent light beam.
Fig. 4 schematically shows a working principle of the diffusion lens 200. As can be seen, after the parallel light beam passes through the scattering lens 200, the light path is changed, so as to form a divergent light beam with an increased exit angle.
In the optical path control structure provided by the exemplary embodiment of the present disclosure, the scattering lens 200 is disposed in the region defined by the pixel defining layer 10 to serve as the scattering unit 20, so that on one hand, a light beam divergence effect can be achieved, and thus an emergent angle of emergent light is increased, so as to enlarge a viewing angle of the quantum dot display device, and on the other hand, the concave portion of the scattering lens 200 can be used as a filling space of a quantum dot material, so as to achieve a thickness decrease of the quantum dot material layer. Specifically, as shown in fig. 5, the corresponding light ray is emitted perpendicularly at the position where the thickness of the quantum dot material layer 30 is the largest, at this time, the optical path of the light ray in the quantum dot material layer 30 is the thickness of the quantum dot material layer 30, and the corresponding light rays are emitted obliquely due to scattering at the position where the thickness of the quantum dot material layer 30 is reduced, and the smaller the thickness of the quantum dot material layer 30, the larger the scattering angle of the outgoing light, at this time, the optical path length of the light in the quantum dot material layer 30 is greater than the thickness of the quantum dot material layer 30, the thickness of the quantum dot material layer 30 corresponding to the emergent position thereof is designed according to the deflection degree of the light, that is, the recess depth of the scattering lens 200 is designed to ensure the optical path of light in the quantum dot material layer 30, so as to meet the performance requirement of the quantum dot material, and to facilitate the display of corresponding colors.
It should be noted that: in this embodiment, the number of the scattering lenses 200 in the scattering unit 20 is not particularly limited, and one scattering lens 200 may form one scattering unit 20, or a plurality of scattering lenses 200 may form one scattering unit 20 together, as long as the scattering effect of light can be achieved, and the optical path length of light in the quantum dot material layer 30 is also taken into consideration.
In the present exemplary embodiment, in order to achieve the thickness reduction of the quantum dot material layer 30, the scattering lens 200 adopts a semi-concave lens structure, which may include, for example, a semi-circular prism, a semi-spherical prism, or a combination of the semi-circular prism and the semi-spherical prism. The scattering lens 200 may be a glass lens or a resin lens, as long as it is a transparent lens having a light diffusion function.
Fig. 6 schematically shows a dimensional layout of the optical path control structure. In general, if the quantum dot material satisfies the performance requirement, the film thickness is difficult to be less than 5 μm, and the height of the pixel defining layer 10 is higher than that of the quantum dot material layer 30, so that the height of the pixel defining layer 10 is required to be not less than 6 μm. On the basis, the deepest distance of the concave surface of the scattering lens 200 can be set between 2 μm and 4 μm, for example, 4 μm, and the quantum dot material layer 30 in the light path also occupies a half of the volume of 4 μm in the pixel defining layer 10.
Based on this, fig. 7 shows a schematic state of printing the quantum dot ink 300, i.e., the quantum dot material solution, in the region defined by the pixel defining layer 10 and the scattering unit 20. The contact angle of the quantum dot ink 300 with the pixel defining layer 10 needs to be greater than 120 ° depending on the process requirements so that more ink can be accommodated. Taking an 80ppi (pixels per inch) sample as an example, fig. 7 is a schematic cross-sectional view of a short side of the sample, and it can be known by approximate calculation that the height of the whole ink drop is about 8 μm, the ink concentration is usually not more than 5%, and the thickness of the dry film in this case is about 3-4 μm. Considering the concave portion in the diffusion lens 200, the dry film thickness is still slightly less than 3 to 4 μm, for example, 2 μm. On this basis, as shown in fig. 8, since the deepest portion of the recess region in the scattering lens 200 can be 4 μm, the dry film thickness of the actual quantum dot material layer 30 can be 6 μm at the thickest portion and about 2 μm at the thinner portion.
The present exemplary embodiment also provides a pixel structure, as shown in fig. 9 and 10, which may include the above-mentioned light path control structure, a color modulation layer on the light emitting side of the light path control structure, a flat layer 60 on the side of the color modulation layer facing away from the light path control structure, and a light source module 50 for providing a backlight.
The optical path control structure may include a plurality of optical path control units, at least one of which is provided with a scattering unit 20 therein; the color modulation layer may include a plurality of color modulation units, at least one of the color modulation units is a quantum dot material layer 30, and the quantum dot material layers 30 and the scattering units 20 are the same in number and are arranged in a one-to-one correspondence; the light source module 50 may include a plurality of light emitting units 500 and an encapsulation layer 70 disposed on a side of the light emitting units 500 close to the light path control structure, where the plurality of light emitting units 500 are disposed in a one-to-one correspondence with the plurality of light path control units in the light path control structure.
Each Light Emitting unit 500 of the Light source module 50 may adopt Light Emitting technologies such as an OLED (Organic Light Emitting Diode) or a micro LED (micro Light Emitting Diode), which is not limited in this embodiment.
Thus, the pixel structure provided by the exemplary embodiment of the present disclosure can increase the emitting angle of the emergent light, thereby expanding the viewing angle of the quantum dot display device, and on the other hand, can also ensure the optical path of the light in the quantum dot material layer 30 while reducing the thickness of the quantum dot material layer 30, thereby satisfying the performance requirement of the quantum dot material.
In this example embodiment, the pixel structure may include a plurality of sub-pixels of different colors, such as a red sub-pixel, a green sub-pixel, and a blue sub-pixel.
Alternatively, referring to fig. 9, when the color of the light emitted from the light source module 50 is the same as that of any one of the sub-pixels, for example, when each of the light emitting units 500 of the light source module 50 emits blue light, the color modulation unit corresponding to the sub-pixel having the same color as that of the light emitted from the light source module 50, for example, the blue sub-pixel, may be the transparent unit 40, and the color modulation units corresponding to the sub-pixels having different colors from that of the light emitted from the light source module 50, for example, the red sub-pixel and the green sub-pixel, may be the quantum dot material layer 30.
Alternatively, referring to fig. 10, when the color of the light emitted by the light source module 50 is different from the colors of all the sub-pixels, for example, when each light emitting unit 500 of the light source module 50 emits white light, the color modulation unit corresponding to each sub-pixel may be the quantum dot material layer 30.
Fig. 11 shows a light emission diagram of a quantum dot material. Taking the light emitting unit 500 as a blue OLED as an example, the blue light irradiates the quantum dot material layer 30, for example, the red quantum dot material layer 301 and the green quantum dot material layer 302 with different material particle diameters, so that the blue light can be correspondingly converted into red light and green light, and the portion that needs to emit the blue light does not need to be provided with a quantum dot material, for example, a transparent unit 40 is provided, so that RGB three-color display can be realized.
Based on the pixel structure described above, the present exemplary embodiment further provides a method for manufacturing a pixel structure, as shown in fig. 12, the method may include:
s1, forming an optical path control structure on the substrate, where the optical path control structure includes a pixel defining layer 10 and a plurality of optical path control units located in an area defined by the pixel defining layer 10, and at least one of the optical path control units has a scattering unit 20 therein, and the scattering unit 20 includes one or more scattering lenses 200;
s2, forming a color modulation layer on the light emitting side of the light path control structure, where the color modulation layer includes a plurality of color modulation units, at least one of the color modulation units is a quantum dot material layer 30, and the quantum dot material layer 30 is disposed corresponding to the scattering unit 20.
The substrate may be, for example, a substrate provided separately, or may also be the encapsulation layer 70 of the light source module 50.
Based on this, according to the method for manufacturing the pixel structure provided by the exemplary embodiment of the present disclosure, by manufacturing the scattering lens 200 and forming the quantum dot material layer 30 in the scattering lens 200, not only the limitation of the quantum dot material having a large thickness determined by the characteristics of the quantum dot material can be broken, but also the optical path of light in the quantum dot material layer 30 can be ensured, so as to meet the performance requirement of the quantum dot material.
The present example embodiment also provides a display panel including the pixel structure as above. The display panel can reduce the thickness of the quantum dot layer and ensure the optical path of light in the quantum dot layer, thereby realizing full-color display.
It should be noted that although in the above detailed description several modules or units of the device for action execution are mentioned, such a division is not mandatory. Indeed, the features and functionality of two or more modules or units described above may be embodied in one module or unit, according to embodiments of the present disclosure. Conversely, the features and functions of one module or unit described above may be further divided into embodiments by a plurality of modules or units.
Moreover, although the steps of the methods of the present disclosure are depicted in the drawings in a particular order, this does not require or imply that the steps must be performed in this particular order, or that all of the depicted steps must be performed, to achieve desirable results. Additionally or alternatively, certain steps may be omitted, multiple steps combined into one step execution, and/or one step broken down into multiple step executions, etc.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.
It will be understood that the present disclosure is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the present disclosure is to be limited only by the terms of the appended claims.

Claims (8)

1. An optical path control structure is characterized by comprising a pixel defining layer and a plurality of optical path control units positioned in an area defined by the pixel defining layer, wherein a scattering unit is arranged in at least one optical path control unit in the plurality of optical path control units;
the scattering unit comprises one or more scattering lenses, the scattering lenses are used for scattering incident light rays, and the scattering lenses are transparent lenses; the scattering lens comprises a concave part located on the light emitting side, the shape of the concave part comprises a semicircular prism and/or a hemispherical prism, and the deepest distance of the concave surface of the scattering lens is 2-4 micrometers.
2. A pixel structure comprising the light path control structure of claim 1 and a color modulation layer on a light exit side of the light path control structure;
the color modulation layer comprises a plurality of color modulation units, at least one color modulation unit in the plurality of color modulation units is a quantum dot material layer, and the quantum dot material layer is arranged corresponding to the scattering unit in the light path control structure.
3. The pixel structure of claim 2, further comprising a light source module, wherein the light source module comprises a plurality of light emitting units, and the plurality of light emitting units are arranged in one-to-one correspondence with the plurality of light path control units in the light path control structure.
4. The pixel structure of claim 3, wherein the pixel structure comprises a plurality of different color sub-pixels;
the color of the light emitted by the light source module is the same as that of any sub-pixel, the color modulation unit corresponding to the sub-pixel with the same color of the light emitted by the light source module is a transparent unit, and the color modulation unit corresponding to the sub-pixel with the different color of the light emitted by the light source module is a quantum dot material layer;
the color of the light emitted by the light source module is different from the colors of all the sub-pixels, and the color modulation units corresponding to the sub-pixels are quantum dot material layers.
5. The pixel structure of claim 3, wherein the light source module further comprises an encapsulation layer on a side of the light emitting unit adjacent to the light path control structure.
6. The pixel structure of claim 2, further comprising a planarization layer on a side of the color modulation layer facing away from the optical path control structure.
7. A display panel comprising the pixel structure of any one of claims 2-6.
8. A method for manufacturing a pixel structure, comprising:
forming a light path control structure on a substrate, wherein the light path control structure comprises a pixel defining layer and a plurality of light path control units positioned in an area defined by the pixel defining layer, at least one of the light path control units is provided with a scattering unit, the scattering unit comprises one or more scattering lenses, and the scattering lenses are transparent lenses;
forming a color modulation layer on the light emitting side of the light path control structure, wherein the color modulation layer comprises a plurality of color modulation units, at least one color modulation unit in the plurality of color modulation units is a quantum dot material layer, and the quantum dot material layer is arranged corresponding to the scattering unit; the scattering lens comprises a concave part located on the light emitting side, the shape of the concave part comprises a semicircular prism and/or a hemispherical prism, and the deepest distance of the concave surface of the scattering lens is 2-4 micrometers.
CN201810294500.9A 2018-03-30 2018-03-30 Light path control structure, pixel structure, preparation method of pixel structure and display panel Active CN108538875B (en)

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CN109449148B (en) * 2018-09-25 2020-10-16 深圳市奥拓电子股份有限公司 LED packaging structure and LED display system
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