CN108513619A - Signal processing chip, image processing system and Range Measurement System - Google Patents
Signal processing chip, image processing system and Range Measurement System Download PDFInfo
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- CN108513619A CN108513619A CN201780004561.0A CN201780004561A CN108513619A CN 108513619 A CN108513619 A CN 108513619A CN 201780004561 A CN201780004561 A CN 201780004561A CN 108513619 A CN108513619 A CN 108513619A
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- photoelectric sensing
- processing chip
- signal processing
- sensing unit
- signal
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/491—Details of non-pulse systems
- G01S7/4912—Receivers
Abstract
A kind of signal processing chip, image processing system and Range Measurement System are provided.The signal processing chip includes：First photoelectric sensing array is configured to receive optical signal, and converts optical signals into the first electric signal；First CMOS reading circuits, the first CMOS reading circuits are configured to receive the first electric signal, handle the first electric signal, to obtain the time data for the flight time for being used to indicate optical signal；Wherein the first photoelectric sensing array is the photoelectric sensing array of silicon substrate, and the first photoelectric sensing array and the first CMOS reading circuits are integrated on same Silicon Wafer.Using photoelectric sensing array received optical signal, the complexity of Range Measurement System can be reduced, improves the reliability of Range Measurement System.
Description
Copyright notice
This patent document disclosure includes material protected by copyright.The copyright is all for copyright holder.Copyright
Owner does not oppose the patent document in the presence of anyone replicates the proce's-verbal of Patent＆Trademark Office and archives or should
Patent discloses.
Technical field
This application involves distance measurement fields, more specifically, be related to a kind of signal processing chip, image processing system and
Range Measurement System.
Background technology
Distance measurement technology is widely used in every field, such as automatic Pilot field, ground mapping field and unmanned plane
Field.
In order to be detected to a certain range of object, traditional Range Measurement System generally comprises sweep mechanism
And rotating mechanism.Rotating mechanism can drive sweep mechanism to be rotated with fixed frequency (such as 20Hz).Hair is provided in sweep mechanism
Emitter and receiver, in the rotary course of sweep mechanism, transmitter constantly sends out optical signal (such as laser signal), receiver pair
The optical signal encounters the reflection signal returned after barrier (i.e. object under test) and is detected, so that it is determined that object under test away from
From.
Traditional Range Measurement System has complicated mechanical structure, and is provided with rotating mechanism, leads to traditional range measurement
The reliability of system is low.
Invention content
A kind of signal processing chip of the application offer, image processing system and Range Measurement System can improve distance and survey
The reliability of amount system, and reduce the complexity of Range Measurement System.
In a first aspect, a kind of signal processing chip is provided, including：First photoelectric sensing array is configured to receive light letter
Number, and the optical signal is converted into the first electric signal；First CMOS reading circuits, the first CMOS reading circuits are configured
At first electric signal is received, first electric signal is handled, to obtain the flight for being used to indicate the optical signal
The time data of time (or receiving time)；The wherein described first photoelectric sensing array is the photoelectric sensing array of silicon substrate, and institute
The first photoelectric sensing array is stated to be integrated on same Silicon Wafer with the first CMOS reading circuits.
Second aspect provides a kind of image processing system, including：Signal processing chip as described in relation to the first aspect；Data
Processor is configured to handle the data that the signal processing chip exports, and obtains the distance comprising object under test and believes
The image data of breath.
The third aspect provides a kind of Range Measurement System, including：Transmitter is configured to the transmitting covering distance and surveys
The optical signal of the field angle FOV of amount system；Image processing system as described in second aspect is configured to receive the optical signal
Encounter the part signal that the object under test back reflection is returned.
Signal processing chip provided by the present application can disposably receive a certain range of light using photoelectric sensing array
Signal, without being carried out to the signal within the scope of this using complicated rotary machine mechanism as traditional Range Measurement System
It receives, is not only able to simplify the mechanical structure of Range Measurement System in this way, and the reliability of Range Measurement System can be improved.
Description of the drawings
Fig. 1 is the schematic diagram of Range Measurement System provided in an embodiment of the present invention.
Fig. 2 is the schematic diagram of the optical signal launch process of Range Measurement System provided in an embodiment of the present invention.
Fig. 3 is the schematic diagram of the optical signal receive process of Range Measurement System provided in an embodiment of the present invention.
Fig. 4 is the planar structure exemplary plot of signal processing chip provided in an embodiment of the present invention.
Fig. 5 is the sectional view of signal processing chip provided by one embodiment of the present invention.
Fig. 6 is the structural schematic diagram of SOI wafer.
Fig. 7 is the sectional view in one piece of region in signal processing chip provided in an embodiment of the present invention.
Fig. 8 is that the circuit structure of the first photoelectric sensing unit provided in an embodiment of the present invention and its corresponding reading circuit shows
Illustration.
Fig. 9 is the sectional view for the signal processing chip that another embodiment of the present invention provides.
Figure 10 is the sectional view for the signal processing chip that further embodiment of this invention provides.
Figure 11 is the planar structure exemplary plot in one piece of region in signal processing chip provided in an embodiment of the present invention.
Figure 12 is the schematic diagram of image processing system provided in an embodiment of the present invention.
Figure 13 is the schematic diagram of Range Measurement System provided in an embodiment of the present invention.
Specific implementation mode
The embodiment of the present invention can be applied to various Range Measurement Systems, such as can be applied to laser acquisition and measures (light
Detection and ranging, Lidar) system, it can also be applied to based on the other kinds of optical signal in addition to laser
Range Measurement System.
In order to simplify the structure of Range Measurement System, the reliability of Range Measurement System is improved.The embodiment of the present invention provides
A kind of Range Measurement System based on photoelectric sensing array, with reference to Fig. 1, to the range measurement system based on photoelectric sensing array
The system structure of system 10 carries out citing description.
As shown in Figure 1, Range Measurement System 10 includes transmitter 11, and optical signal regulating system 12, lens 13, photoelectric sensing
Array 14 and data processor 15.
Transmitter 11 can be used for emitting optical signal (or light beam).The optical signal can be used for ranging, correspondingly, transmitter 11
The optical signal sent out is alternatively referred to as distance measuring signal.Multiple grain (multi-die) encapsulation may be used in transmitter 11, there is utilization in this way
The uniformity of optical signal is provided.
The embodiment of the present invention is not specifically limited the type of transmitter 11.In some embodiments, transmitter 11 can be with
Including one or more light emitting diodes (light emitting diode, LED), laser diode or infrared-emitting diode
Deng.By taking Lidar systems as an example, transmitter 11 may include common laser diode, can also swash including vertical-cavity surface-emitting
Light device (vertical cavity surface emitting laser, VCSEL).VCSEL is a kind of surface emitting type laser,
And the characteristics of wavelength temperature coefficient small (be less than or equal to common lasers wavelength temperature coefficient 1/5), relatively it is suitble to the present invention
The Range Measurement System 10 based on photoelectric sensing array that embodiment provides.
The embodiment of the present invention is not specifically limited the wavelength for the optical signal that transmitter 11 is sent out, this and Range Measurement System
10 application scenario is related.In some embodiments, the wavelength for the optical signal that transmitter 11 is sent out may include 895nm extremely
Any wavelength between 915nm.In some embodiments, the wavelength for the optical signal that transmitter 11 is sent out may include 905nm.
Optical signal regulating system 12 may include laser beam expanding system.What laser beam expanding system can be used for sending out transmitter 11
Optical signal is expanded, so that optical signal can cover one piece of region in scene to be measured.Laser beam expanding system for example may be used
To be reflective beam-expanding system, it can also be transmission-type beam-expanding system, can also be combination.In addition, laser beam expanding system
System can be level-one beam-expanding system, can also be multistage beam-expanding system.As an example, holographic filter can be used
(holographic filter) obtains the wide-angle laser beam of multiple sub- laser beam compositions.As another example, Ke Yili
With the adjustable MEMS of two dimension angular (micro-electro-mechanical system, MEMS) micro mirror to transmitter
11 optical signals sent out carry out multiple reflections, to form the optical signal after expanding.Specifically, optical signal is sent out in transmitter 11
It later, can be by driving MEMS micromirror constantly to change the angle between itself minute surface and light beam so that MEMS micromirror reflected
The angle of optical signal constantly changes, and to diverge to the light beam with two dimension angular, forms the effect expanded.Certainly, at some
In embodiment, beam-expanding system can not also be set, directly forming multi beam using the transmitter array comprising multiple transmitters 11 swashs
Light, to generate the similar effect expanded.
Further, in some embodiments, optical signal regulating system 12 may also include the optical signal execution for treating outgoing
One or more devices or system in the processing such as collimation, even light and expansion field angle (fieldangle, FOV) so that go out
The optical signal penetrated more dissipates, and distribution is more uniform.By taking Fig. 2 as an example, by the processing of optical signal regulating system 12, range measurement
The optical signal that system 10 is sent out has larger coverage area.
Lens 13 can be based on lens imaging principle, and barrier (or object under test) reflected optical signal is converged to light
The light incident side of electric sensor array 14.From figure 3, it can be seen that the reflected optical signal of different directions may be accumulated to light
The different location of the light incident side of electric sensor array 14, to by the photoelectric transfer in corresponding position in photoelectric sensing array 14
Feel unit to receive, causes the photoelectric respone of the photoelectric sensing unit, to convert optical signals into electric signal.
Photoelectric sensing array 14 can be with complementary metal oxide semiconductor (complementary metal oxide
Semiconductor, CMOS) reading circuit (being not shown in Fig. 1-3) be connected.CMOS reading circuits can be configured to photoelectric transfer
The electric signal that sense array 14 exports is handled, to obtain the flight time for being used to indicate the optical signal that transmitter 11 is sent out
The time data of (time of flight, TOF).
The flight time for the optical signal that data processor 15 can be sent out according to transmitter 11, determine the distance of barrier 20,
And then obtain the depth image (or point cloud data with depth information) of barrier 20.
Range Measurement System 10 provided in an embodiment of the present invention, which is can be seen that, from the description of Fig. 1-3 uses photoelectric sensing battle array
Row 14 to the Range Measurement System 10 towards external environment in the distance of object under test measure.Due to photoelectric sensing
The use of array 14, Range Measurement System 10 can scan scene to be measured frame by frame as camera, be surveyed with tradition distance
The spot measurement mode of amount system is compared, and Range Measurement System 10 provided in an embodiment of the present invention has fast response time, is measured
Efficient feature.In addition, the entire measurement process of Range Measurement System 10 may not need the participation of rotary part, improve away from
Reliability from measuring system.
Range Measurement System 10 compared with the Range Measurement System of traditional machinery rotating type, main difference is that
The optical signal being reflected back using photoelectric sensing array measuring targets is received or detected.Photoelectric sensing array will receive
Optical signal is converted into after electric signal, is handled by CMOS reading circuits, and the flight time of instruction optical signal is available for
Time data, after being handled using follow-up data, you can calculate object under test depth image (or have depth information
Point cloud data).In order to simplify the manufacturing process of photoelectric sensing array and its corresponding CMOS reading circuits, saving is manufactured into
This, the embodiment of the present invention proposes that one kind can be by photoelectric sensing array and its corresponding CMOS reading circuits compatibility in same signal
The scheme of processing chip.The signal processing chip is described in detail below.It should be understood that signal processing chip described below
It can be applied in Range Measurement System 10 shown in FIG. 1, can also be applied to other and need to survey the flight time of optical signal
The arbitrary system of amount, the embodiment of the present invention do not limit this.It should also be understood that the term " first " hereinafter used, " second "
Etc. being for distinguishing different objects, rather than for describing specific sequence.
The embodiment of the present invention provides a kind of signal processing chip, which may include the first photoelectric sensing array
With the first CMOS reading circuits.First photoelectric sensing array can be configured to receive optical signal, and convert optical signals into first
Electric signal.First CMOS reading circuits can be configured to receive the first electric signal, handle the first electric signal, to obtain use
In the time data of the flight time of instruction optical signal.First photoelectric sensing array is the photoelectric sensing array of silicon substrate, and first
Photoelectric sensing array and the first CMOS reading circuits are integrated on same Silicon Wafer.
First CMOS reading circuits are the circuits manufactured by silicon-based technology (such as CMOS technology or BiCMOS technique), in order to
First photoelectric sensing array and the first CMOS reading circuits are integrated in same chip, the embodiment of the present invention is by the first photoelectric transfer
Sense array is chosen for the photoelectric sensing array of silicon substrate, and the first photoelectric sensing array and the first CMOS reading circuits are passed through silicon
Base technique (such as CMOS technology or BiCMOS technique) is integrated on same Silicon Wafer.That is, the embodiment of the present invention is using same
One silicon-based technology disposably machines the first photoelectric sensing array and the first CMOS reading circuits so that the first photoelectric sensing
The technique of array and the first CMOS reading circuits is compatible, so as to simplification of flowsheet, saves manufacturing cost.
The embodiment of the present invention pair the first photoelectric sensing array received to optical signal type and wavelength do not limit, can be with
It selects according to actual needs.As an example, the optical signal that the first photoelectric sensing array received arrives is laser signal.As another
One example, the optical signal that the first photoelectric sensing array received arrives are the optical signal that LED is generated.It is connect with the first photoelectric sensing array
For the optical signal received is laser signal, the wavelength of optical signal may include 895nm to any wavelength between 915nm, this
It is since the peak value of the sensitive wave length of the photoelectric sensing unit (such as APD or photodiode) of silicon base (or Silicon Wafer) would generally
Between 900nm-1000nm or between 800nm-900nm.In some embodiments, the wavelength of the optical signal may include
905nm。
The type of the first photoelectric sensing unit in the embodiment of the present invention pair the first photoelectric sensing array is not specifically limited,
The type of the optical signal received can be needed to determine according to the first photoelectric sensing array.It needs to receive with the first photoelectric sensing array
Optical signal be laser signal for, the first photoelectric sensing unit in the first photoelectric sensing array can include avalanche optoelectronic two
In pole pipe (avalanche Photo Diode, APD) and silicon photomultiplier (Silicon photomultiplier, SiPM)
At least one.
The arrangement mode of the embodiment of the present invention pair the first photoelectric sensing array is not specifically limited.As an example, believe
Number processing chip may include M × N blocks region, and every piece of region can include first photoelectricity in the first photoelectric sensing array
Sensing unit, wherein M, N are the positive integer not less than 1, and M × N is more than 1.By taking Fig. 4 as an example, signal processing chip includes altogether
15 pieces of regions 41 (5 rows 5 row), every piece of region 41 includes first photoelectric sensing unit, so as to form 5 × 5 the first light
Electric sensor array.
First CMOS reading circuits include the corresponding reading of each first photoelectric sensing unit in the first photoelectric sensing array
Circuit, i.e. the first CMOS reading circuits are the corresponding reading circuit of each first photoelectric sensing unit in the first photoelectric sensing array
General name.The arrangement mode of the first photoelectric sensing unit of the embodiment of the present invention pair and its corresponding reading circuit does not do specific limit
Fixed, the corresponding reading circuit of the first photoelectric sensing unit can be respectively positioned on the same area of signal processing chip, can also
Positioned at the different zones of signal processing chip.
Optionally, as one embodiment, signal processing chip can include M × N blocks region.First photoelectric sensing array
Can include M × N number of first photoelectric sensing unit being located in M × N blocks region, the first CMOS reading circuits can include
With the M × one-to-one M of N number of first photoelectric sensing unit × N number of reading circuit, and each reading in M × N number of reading circuit
Circuit is located at corresponding first photoelectric sensing unit in the same region in M × N blocks region, and wherein M, N are not less than 1
Positive integer, and M × N is more than 1.The corresponding reading circuit of first photoelectric sensing unit is arranged in signal the embodiment of the present invention
It, can be with the wiring of facilitating chip in the same area of processing chip.
The row of the first photoelectric sensing unit corresponding to the same area of the embodiment of the present invention and reading circuit in this region
Mode for cloth is not specifically limited.
As an example, corresponding first photoelectric sensing unit of the same area and reading circuit can be set up in parallel.Fig. 5
It is the sectional view of signal processing chip shown in Fig. 4, in the example of hgure 5, every piece of region 41 includes the first photoelectric sensing unit
411 and the 411 corresponding reading circuit 412 of the first photoelectric sensing unit, and the first photoelectric sensing unit 411 and reading circuit
412 are set up in parallel.
As another example, corresponding first photoelectric sensing unit of the same area and reading circuit can stack setting,
As corresponding first photoelectric sensing unit of the same area and reading circuit can be located at the different layers of signal processing chip.Further
Insulating layer can be arranged between corresponding first photoelectric sensing unit of the same area and reading circuit in ground.Insulation layers such as can be with
It is oxide layer.Insulating layer can play buffer action, avoid the leaky of silicon materials, and reduce the parasitic capacitance of chip.
For example, SOI (silicon on insulator, the silicon in dielectric substrate) structure may be used in signal processing chip
Design.Fig. 6 shows the basic structure of SOI wafer (wafer), as shown in fig. 6, SOI wafer may include upper layer (upper
Layer) 61, oxide layer (oxide layer) 62 and body support wafer (bulk handle wafer) 63.As shown in fig. 7, can
Being arranged the first photoelectric sensing unit 411 in body supports wafer 63, by the 411 corresponding reading of the first photoelectric sensing unit
Circuit 412 is arranged in upper layer 61, so that the first photoelectric sensing unit 411 and its corresponding reading circuit 412 are by exhausted
Edge layer 62 is separated by.It further, in some embodiments, can be in the top (light incident side) of the first photoelectric sensing unit 411
The spin-coating glass (spin on glass, SOG) of layer of transparent is set, and SOG enables to the first photoelectricity as smoothing material
411 top of sensing unit is concordant with the basic holding in upper layer 61.
The corresponding CMOS of the first photoelectric sensing unit of each of the embodiment of the present invention pair the first photoelectric sensing array is read
Circuit form is not specifically limited, as long as the electric signal that the CMOS output circuits can export first photoelectric sensing unit turns
Change time data (flight time that may be used to indicate the optical signal that first photoelectric sensing unit receives) into.Such as Fig. 8
Shown, which may include trans-impedance amplifier (trans-impedance
Amplifier, TIA) and time-to-digit converter (time-to-digital converter, TDC).TIA can be used for first
The faint current signal that photoelectric sensing unit 411 exports is converted into stable voltage signal.TDC can be based on the voltage signal pair
The receiving time for the optical signal that first photoelectric sensing unit 411 receives is sampled, and digitized time data is obtained.One
In a little embodiments, TDC, which may be replaced by other, can realize that the similar time measures the device or circuit of function, as modulus turns
Parallel operation (analog to digital converter, ADC) or Digital Signal Processing (digital signal
Processing, DSP).
It should be noted that the above-mentioned correspondence of the first photoelectric sensing unit and CMOS reading circuits be a kind of logic or
Division functionally.In fact, the corresponding reading circuit of the first photoelectric sensing unit of difference can be mutual indepedent, can also share
Some devices.For example, the first photoelectric sensing unit of each of first photoelectric sensing array can correspond to a TDC, alternatively, first
Multiple first photoelectric sensing units in photoelectric sensing array can share a TDC.Optionally, as an example, first
Photoelectric sensing array can include the first photoelectric sensing unit of N row, and the first CMOS reading circuits can include and the first photoelectricity of N row
N number of TDC, N number of TDC are configured to handle the light that the first photoelectric sensing unit of N row receives respectively sensing unit correspondingly
Signal, wherein N are the positive integer not less than 1.In other words, in this example, the first photoelectric sensing unit of each column shares one
TDC can save the manufacturing cost of chip with facilitating chip structure in this way.
With continued reference to Fig. 4, every piece of region 41 in Fig. 4 is properly termed as a pixel, and all regions 41 form pixel battle array
Row.In signal processing chip, other than above-mentioned first photoelectric sensing array and the first CMOS reading circuits, can also include
Row selection circuit 42 and column select circuit 43.It can pass through row with certain a line in selected pixels array by row selection circuit 42
Selection circuit 43 can be with a certain row in selected pixels array.Row selection circuit 42 and column select circuit 43 work at the same time, can be with
The a certain pixel gated in pel array carries out data output.
Optionally, in some embodiments, signal processing chip also may include optical filter (optical filter).Light
Filter for example can be optical filter.Optical filter may be provided at the light incident side of the first photoelectric sensing array, and optical filter can
It is configured to be filtered the optical signal for being incident to the first photoelectric sensing array, to obtain the optical signal of target wavelength.
Optical filter can select incident ray, to incident ray reach the first photoelectric sensing array it
Before, the undesirable light of wavelength in incident ray is filtered, the optical signal of target wavelength is obtained.Assuming that the first photoelectric sensing
The desired target wavelength of the first sensing unit in array, can be by adjusting the parameter of optical filter in 905nm or so so that
Allow the wavelength by the optical filter 905nm or so (error range can be +/- 10nm), to reduce other light pair
The interference of first photoelectric sensing array.
Further, in some embodiments, signal processing chip also may include anti-reflection film.Anti-reflection film can be arranged in light
The light incident side of filter.
Incident ray passes through after optical filter, will produce part reflection light, and in order to reduce reflection light, the present invention is real
The light incident side that example is applied in optical filter is provided with anti-reflection film.The setting of anti-reflection film can increase the transmitance of optical signal, to
Improve the signal detection performance of the first photoelectric sensing array.
The thickness of anti-reflection film is related with the type of optical signal to be received, and the embodiment of the present invention is not specifically limited this.
By taking optical signal to be received is laser signal as an example, the thickness of anti-reflection film can be the 1/4 of laser signal wavelength, and error range can
To be chosen for +/- 10%.
Specifically, as shown in figure 9, lamella 901, the lamella can be added in the light incident side of the first photoelectric sensing array
901 can include anti-reflection film and/or optical filter.
Optionally, in some embodiments, signal processing chip may also include lens, and lens may be provided at the first photoelectric transfer
Feel the light incident side of L the first photoelectric sensing units in array, lens can be used for being incident to L the first photoelectric sensing units
The light of optical signal converged, wherein L is the positive integer not less than 1.
The embodiment of the present invention is not specifically limited the value of L, can be each first light in the first photoelectric sensing array
Electric sensing unit is respectively provided with lens, or part the first photoelectric sensing unit setting in the first photoelectric sensing array is saturating
Mirror.
By the light incident side in L the first photoelectric sensing units, lens are set, it can be to the L the first photoelectric sensing lists
The incident ray of member is converged, to improve the detection sensitivity of the L the first photoelectric sensing units.Further, due to
The presence of lens, reaching the incident ray of the L the first photoelectric sensing units can be accumulated to the L the first photoelectric sensing lists
The light incident side of member, will not be refracted to adjacent first photoelectric sensing unit, to reduce the phase between the first photoelectric sensing unit
Mutually interference (cross-talk).
It, can be in each photoelectric sensing unit during the top of lamella 901 is the first photoelectric sensing array by taking Figure 10 as an example
One lens 1001 is set.The size of lens 1001 can be based on the size of 1001 corresponding first photoelectric sensing unit of lens
It chooses.For example, the size of lens 1001 is configurable to cover the first photoelectric sensing unit below the lens substantially.
It should be understood that Figure 10 be with the light incident side of the first photoelectric sensing array be both arranged lamella 901 (comprising anti-reflection film and/
Or optical filter), and be illustrated for setting lens 1001, but the embodiment of the present invention is without being limited thereto.For example, one
In a little embodiments, can lens 1001 be set in the light incidence of the first photoelectric sensing array, and be not provided with lamella 901.
Optionally, in some embodiments, signal processing chip may also include：Second photoelectric sensing array and the 2nd CMOS
Reading circuit.Second photoelectric sensing array can be configured to receive the mixed signal for including optical signal and ambient light, and mixing is believed
Number it is converted into the second electric signal；2nd CMOS reading circuits can be configured to receive the second electric signal, be carried out to the second electric signal
Processing obtains colored or black and white pixel data.
Second photoelectric sensing array can include multiple second photoelectric sensing units, which for example may be used
To be cmos image sensor (CMOS image sensor, CIS).
Signal processing chip provided in an embodiment of the present invention includes the first photoelectric sensing array and the second photoelectric sensing array.
First photoelectric sensing array can receive the optical signal for ranging, and to form depth image, the second photoelectric sensing array is available
In receiving ambient light, to form color image.In other words, on the basis of signal processing chip provided in an embodiment of the present invention
On, two field pictures can be obtained to each signal acquisition of environment to be measured, a frame image recording be environment to be measured depth letter
Cease (or range information), another frame image recording be environment to be measured color (colored or black and white) information.
It describes in detail below to the arrangement mode of the first photoelectric sensing array and the second photoelectric sensing array.
Optionally, in some embodiments, signal processing chip can include M × N blocks region, the first photoelectric sensing array
Can include M × N number of first photoelectric sensing unit being located in M × N blocks region, the second photoelectric sensing array can include
M × N number of second photoelectric sensing unit being located in M × N blocks region, wherein M, N are the positive integer not less than 1, and M ×
N is more than 1.
Every piece of region in M × N blocks region had not only included the first photoelectric sensing unit, but also included the second photoelectric sensing unit,
It, can be with based on the second photoelectric sensing array based on the depth image that the first photoelectric sensing array can obtain having M × N number of pixel
The color image with M × N number of pixel is obtained, and since the first photoelectric sensing unit and the second photoelectric sensing unit are positioned at same
Region, the pixel in the depth image and color image naturally has one-to-one correspondence property, i.e., in depth image and color image
Respective pixel describes the depth information and colouring information in the substantially same orientation in environment to be measured respectively, simplify even without
The registration process of follow-up two field pictures.
By taking the second photoelectric sensing unit is CIS units as an example, the second photoelectric sensing unit can include one or more groups of RGB
Pixel.Further, in every group of rgb pixel, each color, which can correspond to a pixel, can also correspond to multiple pixels.Example
Such as, every group of rgb pixel can include 2 green pixels (pixel that can gate green light), and 1 red pixel (can gate feux rouges
Pixel) and 1 blue pixel (pixel that blue light can be gated).Use the image data that rgb pixel generates for coloured image
Data, alternatively, in some embodiments, the pixel in the second photoelectric sensing unit can also be monochrome pixels, correspondingly,
The image data of generation can be black white image data.
Corresponding first photoelectric sensing unit in every piece of region and the second photoelectric sensing unit in M × N blocks region is every at this
Position in block region can be with non-overlapping copies.
Specifically, referring to Figure 11, every piece of region 41 in M × N blocks region can include the first subregion of non-overlapping copies
1101 and second subregion 1102.Every piece of 41 corresponding first photoelectric sensing unit 411 of region is located in the first subregion 1101,
Every piece of 41 corresponding second photoelectric sensing unit 413 of region is located in the second subregion 1102.
Further, in some embodiments, region 41 also may include third subregion 1103.In first subregion 1101
411 corresponding reading circuit 412 of the first photoelectric sensing unit can be located at the third subregion 1103 in.Certainly, in some realities
It applies in example, the 411 corresponding reading circuit 412 of the first photoelectric sensing unit in the first subregion 1101 may be alternatively located at the first sub-district
In domain 1101 and/or the second subregion 1102, and set with the first photoelectric sensing unit 411 and/or the second photoelectric sensing unit 413
It sets in different layers.
Above-described embodiment describes the flat of the first photoelectric sensing unit in the same area and the second photoelectric sensing unit
Face layout type.On vertical direction (stacking directions of the different layers of chip), the first photoelectric sensing unit in the same area
The same layer of signal processing chip can be located at the second photoelectric sensing unit, the difference of signal processing chip can also be located at
Layer.Further, in some embodiments, between the first photoelectric sensing unit and the second photoelectric sensing unit can mutually every
From to prevent the first photoelectric sensing unit in the same area and influencing each other between the second photoelectric sensing unit.With first
Photoelectric sensing unit is APD, and for the second photoelectric sensing unit is CIS, APD is high tension apparatus, and APD at work can be to CIS
Interference is generated, by the way that the two isolation can effectively be reduced interference between the two, improves the precision of chip.
As an example, the first photoelectric sensing unit in the same area and the second photoelectric sensing unit are located at signal
The same layer of chip is managed, and first photoelectric sensing unit and second photoelectric sensing unit are mutually isolated.For example, can be same
Insulating materials is added between the first photoelectric sensing unit and the second photoelectric sensing unit in one layer.
As another example, the first photoelectric sensing unit in the same area and the second photoelectric sensing unit can be located at
The different layers of signal processing chip, and it is provided with insulation between first photoelectric sensing unit and second photoelectric sensing unit
Layer.
As shown in fig. 7, the second photoelectric sensing unit 413 can be arranged on the upper layer of soi structure 61, to pass through oxidation
Layer 62 is mutually isolated by the first photoelectric sensing unit 411 and the second photoelectric sensing unit 413.Certainly, in some embodiments,
The location swap of the first photoelectric sensing unit 411 and the second photoelectric sensing unit 413 in Fig. 7 can equally be played
By the first photoelectric sensing unit and the mutually isolated effect of the second photoelectric sensing unit in the same area.
Further, in some embodiments, corresponding first photoelectric sensing unit of the same area and the second photoelectric sensing
The light incident side of at least one of unit photoelectric sensing unit is provided with the insulating materials of light transmission.
Still by taking Fig. 7 as an example, the top of the first photoelectric sensing unit 411 is provided with SOG 64, and SOG 64 is a kind of light transmission
Insulating materials can either ensure that the first photoelectric sensing unit 411 of lower layer receives incident ray, and can guarantee the first photoelectric transfer
Feel mutually isolated between unit 411 and the second photoelectric sensing unit 413.
The embodiment of the present invention additionally provides a kind of image processing system.As shown in figure 12, which can
Including signal processing chip 1210 and data processor 1220.Signal processing chip 1210 can be any embodiment description above
Signal processing chip.Data processor 1220 can be configured to handle the data that signal processing chip 1210 exports,
Obtain including the depth image (or point cloud data with depth information) of object under test.For example, data processor 1220 can be from
The transmitting terminal of optical signal obtains the time data for the launch time for being used to indicate the optical signal, and from picture processing chip 1210
The first CMOS reading circuits receive be used to indicate optical signal flight time time data；Then, data processor 1220
The depth image of object under test can be generated using TOF principles according to the flight time of optical signal.Further, at signal
When managing chip 1210 and including the second photoelectric sensing array and the 2nd CMOS reading circuits, data processor 1220 can also be according to the
The black and white of two CMOS reading circuits output or the image data of colour generate the black and white or coloured image of object under test.
The embodiment of the present invention additionally provides a kind of Range Measurement System.As shown in figure 13, which can
Including transmitter 1310 and image processing system 1200 as shown in figure 12.Transmitter 1310 can be configured to transmitting light letter
Number, such as emit the optical signal of the FOV of coverage distance measuring system 1300.Image processing system 1300 can be configured to receive light letter
Number encounter the part signal that object under test back reflection is returned.Optionally, in some embodiments, Range Measurement System 1300 can be with
For laser acquisition and measuring system or laser radar.
The Range Measurement System for sensing external environmental information, for example, the range information of environmental goals, angle information,
Reflection intensity information, velocity information etc..Specifically, the laser measurement system of embodiment of the present invention can be applied to mobile platform,
The laser measurement system can be mounted on the platform body of mobile platform.Mobile platform with laser measurement system can be to outside
Environment measures, for example, measuring mobile platform at a distance from barrier for purposes such as avoidances, and carries out two to external environment
The mapping of dimension or three-dimensional.In some embodiments, mobile platform includes at least one in unmanned vehicle, automobile and telecar
Kind.When laser measurement system is applied to unmanned vehicle, platform body is the fuselage of unmanned vehicle.Work as laser measurement system
When applied to automobile, platform body is the vehicle body of automobile.When laser measurement system is applied to telecar, platform body is remote control
The vehicle body of vehicle.
In the above-described embodiments, can come wholly or partly by software, hardware, firmware or any other combination real
It is existing.When implemented in software, it can entirely or partly realize in the form of a computer program product.The computer program
Product includes one or more computer instructions.When loading on computers and executing the computer program instructions, all or
It partly generates according to the flow or function described in the embodiment of the present invention.The computer can be all-purpose computer, special meter
Calculation machine, computer network or other programmable devices.The computer instruction can be stored in computer readable storage medium
In, or from a computer readable storage medium to the transmission of another computer readable storage medium, for example, the computer
Instruction can pass through wired (such as coaxial cable, optical fiber, number from a web-site, computer, server or data center
User's line (digital subscriber line, DSL)) or wireless (such as infrared, wireless, microwave etc.) mode to another
Web-site, computer, server or data center are transmitted.The computer readable storage medium can be computer capacity
Any usable medium enough accessed is either deposited comprising data such as one or more usable mediums integrated server, data centers
Store up equipment.The usable medium can be magnetic medium (for example, floppy disk, hard disk, tape), optical medium (such as digital video light
Disk (digital video disc, DVD)) or semiconductor medium (such as solid state disk (solid state disk,
SSD)) etc..
Those of ordinary skill in the art may realize that lists described in conjunction with the examples disclosed in the embodiments of the present disclosure
Member and algorithm steps can be realized with the combination of electronic hardware or computer software and electronic hardware.These functions are actually
It is implemented in hardware or software, depends on the specific application and design constraint of technical solution.Professional technician
Each specific application can be used different methods to achieve the described function, but this realization is it is not considered that exceed
Scope of the present application.
In several embodiments provided herein, it should be understood that disclosed systems, devices and methods, it can be with
It realizes by another way.For example, the apparatus embodiments described above are merely exemplary, for example, the unit
It divides, only a kind of division of logic function, formula that in actual implementation, there may be another division manner, such as multiple units or component
It can be combined or can be integrated into another system, or some features can be ignored or not executed.Another point, it is shown or
The mutual coupling, direct-coupling or communication connection discussed can be the indirect coupling by some interfaces, device or unit
It closes or communicates to connect, can be electrical, machinery or other forms.
The unit illustrated as separating component may or may not be physically separated, aobvious as unit
The component shown may or may not be physical unit, you can be located at a place, or may be distributed over multiple
In network element.Some or all of unit therein can be selected according to the actual needs to realize the mesh of this embodiment scheme
's.
In addition, each functional unit in each embodiment of the application can be integrated in a processing unit, it can also
It is that each unit physically exists alone, it can also be during two or more units be integrated in one unit.
The above, the only specific implementation mode of the application, but the protection domain of the application is not limited thereto, it is any
Those familiar with the art can easily think of the change or the replacement in the technical scope that the application discloses, and should all contain
It covers within the protection domain of the application.Therefore, the protection domain of the application should be based on the protection scope of the described claims.
Claims (20)
1. a kind of signal processing chip, which is characterized in that including：
First photoelectric sensing array is configured to receive optical signal, and the optical signal is converted into the first electric signal；
First complementary metal oxide semiconductor CMOS reading circuits, the first CMOS reading circuits are configured to described in reception
First electric signal handles first electric signal, to obtain the time for the flight time for being used to indicate the optical signal
Data；
The wherein described first photoelectric sensing array be silicon substrate photoelectric sensing array, and the first photoelectric sensing array with it is described
First CMOS reading circuits are integrated on same Silicon Wafer.
2. signal processing chip as described in claim 1, which is characterized in that the signal processing chip further includes：
Second photoelectric sensing array, it includes the optical signal and ambient light that the second photoelectric sensing array, which is configured to receive,
The mixed signal is converted into the second electric signal by mixed signal；
2nd CMOS reading circuits, the 2nd CMOS reading circuits are configured to receive second electric signal, to described
Two electric signals are handled, and colored or black and white pixel data is obtained.
3. signal processing chip as claimed in claim 2, which is characterized in that the signal processing chip includes M × N blocks area
Domain, the first photoelectric sensing array include M × N number of first photoelectric sensing unit being located in M × N blocks region,
The second photoelectric sensing array includes M × N number of second photoelectric sensing unit being located in M × N blocks region, wherein
M, N is the positive integer not less than 1, and M × N is more than 1.
4. signal processing chip as claimed in claim 3, which is characterized in that every piece of region in M × N blocks region includes
The first subregion and the second subregion of non-overlapping copies, corresponding first photoelectric sensing unit in every piece of region are located at described every
In first subregion in block region, corresponding second photoelectric sensing unit in every piece of region is located at the second of every piece of region
In subregion.
5. signal processing chip as claimed in claim 3, which is characterized in that in the T blocks region in M × N blocks region
Corresponding first photoelectric sensing unit in every piece of region and the second photoelectric sensing unit are mutually isolated, and wherein T is whole not less than 1
Number.
6. signal processing chip as claimed in claim 5, which is characterized in that every piece of region in T blocks region is corresponding
First photoelectric sensing unit and the second photoelectric sensing are located at the different layers of the signal processing chip, and every piece of region
It is provided with insulating layer between corresponding first photoelectric sensing unit and the second photoelectric sensing unit.
7. signal processing chip as claimed in claim 6, which is characterized in that corresponding first photoelectric sensing in every piece of region
The light incident side of at least one of unit and the second photoelectric sensing unit photoelectric sensing unit is provided with the insulating materials of light transmission.
8. the signal processing chip as described in any one of claim 1-7, which is characterized in that the signal processing chip also wraps
Containing optical filter, the optical filter is arranged the light incident side in the first photoelectric sensing array, the optical filter by with
It is set to and the optical signal for being incident to the first photoelectric sensing array is filtered, to obtain the optical signal of target wavelength.
9. signal processing chip as claimed in claim 8, which is characterized in that the signal processing chip also includes anti-reflection film,
The light incident side in the optical filter is arranged in the anti-reflection film.
10. the signal processing chip as described in any one of claim 1-7, which is characterized in that the signal processing chip is also
Including lens, the light incident side of the L in the first photoelectric sensing array the first photoelectric sensing units is arranged in the lens,
The light that the lens are used for the optical signal to being incident to the L the first photoelectric sensing units converges, and wherein L is not small
In 1 positive integer.
11. the signal processing chip as described in any one of claim 1-7, which is characterized in that the first photoelectric sensing battle array
Row are located at the first CMOS reading circuits in the different layers of the signal processing chip, and the first photoelectric sensing array
It is provided with insulating layer between the first CMOS reading circuits.
12. the signal processing chip as described in any one of claim 1-7, which is characterized in that the signal processing chip packet
Containing M × N blocks region, the first photoelectric sensing array includes M × N number of first photoelectricity being located in M × N blocks region
Sensing unit, the first CMOS reading circuits include and the M × one-to-one M of N number of first photoelectric sensing unit × N number of
Reading circuit, and each reading circuit in the M × N number of reading circuit and corresponding first photoelectric sensing unit be located at it is described
In the same region in M × N blocks region, wherein M, N are the positive integer not less than 1, and M × N is more than 1.
13. signal processing chip as claimed in claim 12, which is characterized in that every piece of region pair in M × N blocks region
The first photoelectric sensing unit and reading circuit answered are arranged side by side in every piece of region or stack setting.
14. the signal processing chip as described in any one of claim 1-7, which is characterized in that the first photoelectric sensing battle array
Row include the first photoelectric sensing unit of N row, and the first CMOS reading circuits include and first photoelectric sensing unit of N row one
One corresponding N number of time-to-digit converter TDC, N number of TDC are configured to handle the first photoelectric sensing of N row list respectively
The optical signal that member receives, wherein N are the positive integer not less than 1.
15. the signal processing chip as described in any one of claim 1-7, which is characterized in that the first photoelectric sensing battle array
The first photoelectric sensing unit in row includes at least one of the following：Avalanche photodide APD and silicon photomultiplier
SiPM。
16. the signal processing chip as described in any one of claim 1-7, which is characterized in that the wavelength packet of the optical signal
895nm is included to any wavelength between 915nm.
17. the signal processing chip as described in any one of claim 1-7, which is characterized in that the optical signal is believed for laser
Number or Light-emitting diode LED generate optical signal.
18. a kind of image processing system, which is characterized in that including：
Signal processing chip as described in any one of claim 1-17；
Data processor is configured to handle the data that the signal processing chip exports, and obtains including object under test
Range information image data.
19. a kind of Range Measurement System, which is characterized in that including：
Transmitter is configured to the optical signal that transmitting covers the field angle FOV of the Range Measurement System；
Image processing system as claimed in claim 18, be configured to receive the optical signal encounter it is anti-after the object under test
It is emitted back towards the part signal come.
20. Range Measurement System as claimed in claim 19, which is characterized in that the Range Measurement System is laser radar.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2017/099998 WO2019041257A1 (en) | 2017-08-31 | 2017-08-31 | Signal processing chip, image processing system and distance measurement system |
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| CN108513619A true CN108513619A (en) | 2018-09-07 |
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| CN201780004561.0A Pending CN108513619A (en) | 2017-08-31 | 2017-08-31 | Signal processing chip, image processing system and Range Measurement System |
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| WO (1) | WO2019041257A1 (en) |
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