CN108511564A - 一种基于GaN/CsPbBr3异质结的光响应型LED及其制备方法 - Google Patents
一种基于GaN/CsPbBr3异质结的光响应型LED及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种基于GaN/CsPbBr3异质结的光响应型LED及其制备方法，它是由蓝宝石氮化镓基片、全无机钙钛矿CsPbBr3薄膜、铟电极、碳电极组成，是一种In/GaN/CsPbBr3/C结构，其制备方法为选取蓝宝石GaN基片并清洗，制备In底电极，反溶剂辅助生成全无机钙钛矿CsPbBr3多晶薄膜，制备碳顶电极，完成后，即为制作成的一个完整LED器件。在无外加偏压时，是实现波长范围在350nm～550nm的光探测；在正向偏压下，能够发射出峰值位于525nm的绿光。本发明工艺简单，成本低，双功能效果好。
Description
技术领域
本发明涉及一种光通信LED制备技术，特别是一种基于GaN/CsPbBr3异质结的光响应型LED及其制备方法
背景技术
2017年，Oh等人在Science上报道了光电探测器和发光二极管双功能集成器件。[1]报道中展示了该双功能器件的巨大的应用前景，特别是在屏幕亮度调控、信息交流等领域的应用。自此，双功能器件开始引起了研究人员的兴趣。
此外，近年来卤族钙钛矿在光电领域中大放异彩，被广泛应用于太阳能电池、光电探测器、发光二极管中。[2-4]其中，全无机钙钛矿CsPbBr3以其超高的稳定性，克服了有机-无机杂化钙钛矿在大气环境中不宜保存、受热易分解等短板，被广泛应用于发光二极管或光电探测器中。[5,6]因此，将全无机钙钛矿CsPbBr3应用于双功能集成器件上，可能制备出高性能的器件。
目前，CsPbBr3多以三维多晶薄膜、二维纳米片、零维量子点等形式应用于发光二极管充当发光层。[7-9]但是，二维纳米片、零维量子点具备超强的量子限制作用，不利于激子分离实现光探测。为解决上述难题，我们致力于研究三维多晶薄膜光电探测器和发光双功能器件的设计和制备，并创新性地将其应用于可见光无线通信。
【参考文献】
[1]Oh N,Kim BH,Cho S-Y,et al.Science.2017；355:616-9.
[2]Shen L,Fang Y,Wang D,et al.Advanced Materials.2016；28:10794-800.
[3]He M,Chen Y,Liu H,et al.Chemical Communications.2015；51:9659-61.
[4]Jeon NJ,Noh JH,Kim YC,et al.Nature materials.2014；13:897-903.
[5]Zhang X,Xu B,Zhang J,et al.Advanced Functional Materials.2016；26:4595-600.
[6]Wei Z,Perumal A,Su R,et al.Nanoscale.2016；8:18021-6.
[7]Li X,Wu Y,Zhang S,et al.Advanced Functional Materials.2016；26:2435-45.
[8]Byun J,Cho H,Wolf C,et al.Advanced Materials.2016；28:7515.
[9]Cho H,Jeong SH,Park MH,et al.Science.2015；350:1222.
发明内容
本发明的目的是提出了一种基于GaN/CsPbBr3异质结的光响应型LED及其制备方法。它能够实现光通信的发光(发射)和探测(接受)的双功能。
本发明是这样实现的。它是由蓝宝石氮化镓基片、全无机钙钛矿CsPbBr3薄膜、铟电极、碳电极组成，是一种In/GaN/CsPbBr3/C结构，全无机钙钛矿CsPbBr3薄膜层设置在氮化镓层上，同时并列设置铟电极，全无机钙钛矿CsPbBr3薄膜层上设置碳电极。
本发明的制备方法包括以下步骤：
(1)选取蓝宝石GaN基片并清洗
GaN基片分别用去离子水、丙酮、酒精各超声15分钟，然后用紫外臭氧处理30分钟；
(2)制备In底电极
将熔化的金属In，均匀地涂布在GaN基片一侧，在室温下，冷却便可得到金属In底电极；
(3)反溶剂辅助生成全无机钙钛矿CsPbBr3多晶薄膜
将全无机钙钛矿CsPbBr3粉体，溶解在DMSO中；静置2h后，使用孔径为0.22μm的滤网过滤得到无色透明溶液。随后，吸取少量透明溶液均匀滴加在GaN基片上，在匀胶机上使用转速4000rpm运行60s，同时在运行25s后，将反溶剂甲苯滴加GaN基片上；最后，将样品置于Ar氛围中在100℃退火10min，提高全无机钙钛矿CsPbBr3薄膜的结晶性；
(4)制备碳顶电极
使用面积为0.04cm2的掩膜版，将碳浆料刮涂至样品上的CsPbBr3薄膜上；最后，将样品置于Ar氛围中，100℃退火30min，去除碳浆料中的溶剂；
(5)检测
器件的光电性能采用安捷伦B1500A测试。器件的电致发光谱线采用PrincetonInstruments Acton SP2500测量。这些测试分析结果分别列于附图中。
至此，即可制作成一个完整的光响应LED器件。
本发明的优点和特色之处在于：
(1)构建GaN/全无机钙钛矿CsPbBr3异质结，形成光电探测和电致发光性能双优的光响
应LED器件。
(2)使用碳电极，免去了昂贵的空穴传输层材料的使用，减小了器件的成本。
(3)利用GaN超高的化学稳定性，使用后的器件可以回收，经过简单的处理后，GaN便
可再利用，符合经济可再生的发展趋势。
附图说明
图1光响应型LED的器件结构。
图2器件的光电响应I-V特征曲线。
图3器件的光电响应I-T特征曲线。
图4器件的电致发光I-V特征曲线。
图5器件的电致发光的光学谱线。
图6器件的电致发光的CIE色域图。
具体实施方式
下面通过实施例对本发明进一步说明。
实施例1：探测发光双功能LED的制备：
(1)选取蓝宝石GaN基片并清洗
GaN基片分别用去离子水、丙酮、酒精各超声15分钟，然后用紫外臭氧处理30分钟；
(2)制备In底电极
用电烙铁将In颗粒熔化，均匀地涂布在GaN基片一侧。在室温下，冷却便可得到金属In底电极；
(3)反溶剂辅助生成全无机钙钛矿CsPbBr3多晶薄膜
将全无机钙钛矿CsPbBr3粉体，溶解在DMSO中；静置2h后，使用孔径为0.22μm的滤网过滤得到无色透明溶液。随后，吸取少量透明溶液均匀滴加在GaN基片上，在匀胶机上使用转速4000rpm运行60s，需要强调的是在运行25s后，应该将反溶剂甲苯滴加GaN基片上；最后，将样品置于Ar氛围中在100℃退火10min，提高全无机钙钛矿CsPbBr3薄膜的结晶性；
(4)制备碳顶电极
使用面积为0.04cm2的掩膜版，将碳浆料刮涂至样品上的CsPbBr3薄膜上；最后，将样品置于Ar氛围中在100℃退火30min，去除碳浆料中的溶剂；
(5)检测
至此，即可制作成一个完整的光响应LED器件。
将组装好的光电器件测试其光响应性能以及电致发光性能。这些测试分析结果分别列于附图中。
Claims (2)
1.一种基于GaN/CsPbBr3异质结的光响应型LED，它是由蓝宝石氮化镓基片、全无机钙钛矿CsPbBr3薄膜、铟电极、碳电极组成，是一种In/GaN/CsPbBr3/C结构，其特征在于全无机钙钛矿CsPbBr3薄膜层设置在氮化镓层上，同时并列设置铟电极，全无机钙钛矿CsPbBr3薄膜层上设置碳电极。
2.一种基于GaN/CsPbBr3异质结的光响应型LED的制备方法，其特征在于制备步骤为：
(1)选取蓝宝石GaN基片并清洗
GaN基片分别用去离子水、丙酮、酒精各超声15分钟，然后用紫外臭氧处理30分钟；
(2)制备In底电极
将熔化的金属In，均匀地涂布在GaN基片一侧，在室温下，冷却便可得到金属In底电极；
(3)反溶剂辅助生成全无机钙钛矿CsPbBr3多晶薄膜
将全无机钙钛矿CsPbBr3粉体，溶解在DMSO中；静置2h后，使用孔径为0.22μm的滤网过滤得到无色透明溶液，随后，吸取少量透明溶液均匀滴加在GaN基片上，在匀胶机上使用转速4000rpm运行60s，同时在运行25s后，将反溶剂甲苯滴加GaN基片上；最后，将样品置于Ar氛围中在100℃退火10min，提高全无机钙钛矿CsPbBr3薄膜的结晶性；
(4)制备碳顶电极
使用面积为0.04cm2的掩膜版，将碳浆料刮涂至样品上的CsPbBr3薄膜上；最后，将样品置于Ar氛围中，100℃退火30min，去除碳浆料中的溶剂；
(5)检测
检测完成后，即为制作成的一个完整LED器件。
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| US16/616,162 US10749065B2 (en) | 2018-02-28 | 2019-02-19 | Preparation method and application of light-responsive LED based on GaN/CsPbBrxI3-x heterojunction |
| PCT/CN2019/075448 WO2019165909A1 (zh) | 2018-02-28 | 2019-02-19 | 一种基于GaN/CsPbBrxI3-x异质结的光响应型LED及其制备方法和应用 |
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| CN109638165A (zh) * | 2018-12-17 | 2019-04-16 | 深圳大学 | 一种多功能的光电子器件 |
| WO2019165909A1 (zh) * | 2018-02-28 | 2019-09-06 | 湖北大学 | 一种基于GaN/CsPbBrxI3-x异质结的光响应型LED及其制备方法和应用 |
| CN116359451A (zh) * | 2023-06-01 | 2023-06-30 | 之江实验室 | 用于检测氮氧化物的气敏材料、制备方法、元件及应用 |
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| CN111500288B (zh) * | 2019-01-31 | 2023-06-02 | 隆达电子股份有限公司 | 钙钛矿纳米发光晶体的制造方法 |
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| KR20230130200A (ko) * | 2022-03-02 | 2023-09-12 | 한화솔루션 주식회사 | 고순도 세슘할라이드 제조방법 및 페로브스카이트 복합재 |
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Family Cites Families (11)
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| US20030034491A1 (en) | 2001-08-14 | 2003-02-20 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| EP3328961B1 (en) * | 2015-07-31 | 2019-04-03 | Avantama AG | Luminescent crystals and manufacturing thereof |
| CN105349140B (zh) * | 2015-12-08 | 2017-06-16 | 重庆大学 | 基于CsPbBr3‑xIx‑ZnS钙钛矿量子点异质结的制备方法及其产品 |
| CN105870287B (zh) | 2016-05-31 | 2018-01-23 | 中国科学院半导体研究所 | GaN基白光LED及制备方法 |
| US11549056B2 (en) * | 2016-08-26 | 2023-01-10 | King Abdullah University Of Science And Technology | Compositions and methods relating to luminescent structures |
| US10858581B2 (en) * | 2016-10-17 | 2020-12-08 | The Regents Of The University Of California | Heterojunctions in halide perovskite nanostructures |
| CN107416894A (zh) * | 2017-08-03 | 2017-12-01 | 湖北大学 | 一种类钙钛矿材料CsPb2Br5、合成方法及其用途 |
| CN107611229A (zh) * | 2017-08-24 | 2018-01-19 | 南京大学 | 一种交流驱动提高硅基异质结电致发光器件发光稳定性的方法 |
| CN107611230A (zh) * | 2017-08-24 | 2018-01-19 | 南京大学 | 一种钙钛矿/硅异质结电致发光器件及制备方法 |
| CN108511564A (zh) * | 2018-02-28 | 2018-09-07 | 湖北大学 | 一种基于GaN/CsPbBr3异质结的光响应型LED及其制备方法 |
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| WO2019165909A1 (zh) * | 2018-02-28 | 2019-09-06 | 湖北大学 | 一种基于GaN/CsPbBrxI3-x异质结的光响应型LED及其制备方法和应用 |
| US10749065B2 (en) | 2018-02-28 | 2020-08-18 | Hubei University | Preparation method and application of light-responsive LED based on GaN/CsPbBrxI3-x heterojunction |
| CN109638165A (zh) * | 2018-12-17 | 2019-04-16 | 深圳大学 | 一种多功能的光电子器件 |
| CN109638165B (zh) * | 2018-12-17 | 2020-06-23 | 深圳大学 | 一种多功能的光电子器件 |
| CN116359451A (zh) * | 2023-06-01 | 2023-06-30 | 之江实验室 | 用于检测氮氧化物的气敏材料、制备方法、元件及应用 |
| CN116359451B (zh) * | 2023-06-01 | 2023-10-31 | 之江实验室 | 用于检测氮氧化物的气敏材料、制备方法、元件及应用 |
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