CN108511537A - A kind of solar cell - Google Patents
A kind of solar cell Download PDFInfo
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- CN108511537A CN108511537A CN201810673308.0A CN201810673308A CN108511537A CN 108511537 A CN108511537 A CN 108511537A CN 201810673308 A CN201810673308 A CN 201810673308A CN 108511537 A CN108511537 A CN 108511537A
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- 239000010410 layer Substances 0.000 claims abstract description 140
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000002344 surface layer Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 31
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 239000011733 molybdenum Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 4
- 239000011229 interlayer Substances 0.000 abstract description 2
- 238000001579 optical reflectometry Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 11
- 239000010409 thin film Substances 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 230000003746 surface roughness Effects 0.000 description 9
- 230000009466 transformation Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 4
- 230000010307 cell transformation Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 229960001296 zinc oxide Drugs 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
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- 230000008020 evaporation Effects 0.000 description 1
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- 238000005286 illumination Methods 0.000 description 1
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- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000000446 sulfanediyl group Chemical group *S* 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a kind of solar cells, including：Substrate；Back electrode layer is set to above the substrate, and the back electrode layer includes first layer and the second layer, and first layer proximate substrate side, the second layer bulk density is less than the first layer bulk density；Light absorbing layer, setting are square on the second layer；And preceding electrode layer, setting are square on the second layer；And wherein, the first layer is demarcated with second interlayer without apparent.Contain the solar cell on smooth back electrode surface in compared with the prior art, the solar cell of the back electrode of such raw surface layer with appropriate bulk density is conducive to spontaneously form limit luminous effect, reduces the light reflectivity of solar cell, improve absorptivity.
Description
Technical field
The present invention relates to photovoltaic field, a kind of particularly solar cell.
Background technology
The problems such as economic fast development brings global energy crisis and environmental pollution, exploitation regenerative resource and cleaning energy
Source is extremely urgent.In recent years, solar energy as new energy with it cheap, rich content, easily obtain and the advantages such as pollution-free by
Gradually replace fossil energy.Solar energy is generated electricity using it as the energy using being mainly reflected in.
Thin-film solar cells is also known as " solar chip " or " photocell ", is a kind of to be converted into electric energy using luminous energy
Device.Thin-film solar cells mainly (is referred to as by copper indium gallium selenide：CIGS) material and other materials form P-N in substrate
The film of section generates electricity, it is strong with light absorpting ability, transformation efficiency is high, manufacturing cost is low, can flexibility, power generation stabilization and
Advantages of environment protection.The transformation efficiency of thin-film solar cells refers to solar energy incident shared by effective electric energy for being converted to
The percentage of amount, laboratory highest solar cell transformation efficiency alreadys exceed 22% at present, but is gone back in actual industrial production
It is extremely difficult to so high transformation efficiency.Improve solar cell light energy conversion efficiency can with effectively save production cost, into
One step solves problem of energy crisis.
Invention content
For the technical problems in the prior art, the present invention proposes a kind of solar cell, including：Substrate；The back of the body
Electrode layer is set to above the substrate, and the back electrode layer includes first layer and the second layer, the first layer proximate substrate
Side, the second layer bulk density are less than the first layer bulk density；Light absorbing layer, setting is on the second layer
Side；And preceding electrode layer, setting are square on the second layer.
Solar cell as described above, first back electrode layer and the second back electrode layer include metal molybdenum.
The thickness of solar cell as described above, second back electrode layer is 5-30nm.
The thickness of solar cell as described above, first back electrode layer is 300-1000nm.
Solar cell as described above, molybdenum content is about 6g/cm in the second back electrode layer unit volume3。
Solar cell as described above, molybdenum content is about 10g/cm in the first back electrode layer unit volume3。
Solar cell as described above, it is Ra ＜ 30nm that second back electrode layer, which has rough surface layer, roughness Ra,.
Solar cell as described above, first back electrode layer can further include the first sedimentary and second
Sedimentary, the first sedimentary bulk density is less than the bulk density of second sedimentary, wherein first sedimentary
Close to the substrate.
A kind of preparation method of thin-film solar cells, including：The first back electrode layer is prepared in substrate；Described first
The second back electrode layer is prepared on back electrode layer, wherein the bulk density of the second back electrode layer is less than the body of first back electrode layer
Product density；Light absorbing layer is prepared on second back electrode layer；Electrode layer before being prepared on the light absorbing layer.
Contain the solar cell on smooth back electrode surface in compared with the prior art, including thick with appropriate bulk density
The solar cell of the back electrode table of rough superficial layer is conducive to spontaneously form limit luminous effect, reduces the light reflection of solar cell
Rate improves absorptivity.
Description of the drawings
In the following, the preferred embodiment of the present invention will be described in more detail in conjunction with attached drawing, wherein：
Figure 1A and Figure 1B is thin-film solar cells schematic diagram according to an embodiment of the invention；And
Fig. 2 is the preparation flow figure of thin-film solar cells according to an embodiment of the invention.
Specific implementation mode
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
The every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
In the following detailed description, the specific embodiment for being used for illustrating the application as the application part may refer to
Each Figure of description.In the accompanying drawings, similar reference numeral describes substantially similar component in different drawings.This Shen
Each specific embodiment please has carried out description detailed enough following so that has the general of ability domain-dependent knowledge and technology
Logical technical staff can implement the technical solution of the application.It should be appreciated that other embodiments can also be utilized or to the application
Embodiment carry out structure, logic or electrical change.
The basis of solar cell working is the photovoltaic effect of semiconductor PN, i.e. sunlight is radiated at solar-electricity
When on the PN junction in pond, interior charge distribution state changes, and electromotive force and electric current are generated on the both sides of PN junction.
Figure 1A and Figure 1B is thin-film solar cells schematic diagram according to an embodiment of the invention.It is according to the present invention
One embodiment, using common soda-lime glass as substrate 101, sodium element therein enters CIGS crystal grain with diffusion mode
In (light absorbing layer 103), promote the growth of CIGS crystal grain (light absorbing layer 103), optimizes the electric property of light absorbing layer 103, especially
It can improve its p-type characteristic.As optional embodiment, substrate 101 can also use other rigid materials such as glass, ceramics
Deng or flexible material such as metal, plastics etc..It should be noted that some glass may need to use special work when in use
Skill processing, such as Pyrex, polyimides glass；Such as select metal as substrate 101, it need to be in metallic upper surface and solar-electricity
The barrier layer of the side plating insulation of pond other components contact, such as silica, silicon nitride；It such as selects plastics as substrate, needs to note
The temperature margin that the selected plastics of meaning are resistant to.
Back electrode 102 is sputtered at 101 surface of substrate, according to one embodiment of present invention, using metal molybdenum (Mo) conduct
Back electrode 102 has the advantages that stability is good, reflectivity is high, resistance is low.As optional embodiment, gold can also be used
Belong to tungsten (W) or transparency conducting layer (TCO) is used as back electrode.According to one embodiment of present invention, back electrode 102 has two layers
Structure, wherein 1021 proximate substrate 101 of first layer, the second layer 1022 include rough surface layer.According to one embodiment of present invention,
First layer and the second interlayer are without apparent boundary.According to one embodiment of present invention, 1022 bulk density of rough surface layer is less than the
One layer 1021, bulk density about 4-8g/cm3, surface roughness is no more than 30nm.Rough surface layer with appropriate roughness can be with
Improve the attachment of back electrode and adhesive layer thereon.In the prior art, back electrode bulk density about 9-10g/cm3, surface roughness
About 4nm is that smooth surface forms smooth surface when continuation is coated with remaining film layer on it.In this case, light absorbing layer
The roughness on 103 surfaces is too low, and bulk density is high, and reflectivity is higher, is unfavorable for fully absorbing for luminous energy.Compared with the prior art
In contain the solar cell on smooth back electrode surface, the solar cell on the coarse back electrode surface comprising appropriateness is with relatively low
The surface of bulk density is conducive to spontaneously form limit luminous effect, reduces the light reflectivity of solar cell, improves absorptivity.
According to one embodiment of present invention, it is obtained by experiment, back electrode surface volume density about 4-8g/cm3, surface roughness exists
30nm or less is preferred.Collection analysis the embodiment of the present invention result obtains, surface volume density about 5-7g/cm3, roughness about exists
When between 10-20nm, the transformation efficiency of solar cell has more apparent raising.According to one embodiment of present invention, described
Bulk density can also be defined as the volume of certain material unit volume Nei, and the bulk density of the first back electrode layer is more than second back of the body
The bulk density of electrode layer can be in unit volume, and the content of the middle Mo of the first back electrode layer is more than the second back electrode layer Mo
Content, or in unit volume, first by the volume shared by electrode layer be more than the second back electrode layer shared by volume.
According to one embodiment of present invention, first layer 1021 may further include the first sedimentary and the second deposition
Layer.Wherein the first sedimentary proximate substrate side, the second sedimentary are arranged between the first sedimentary and the second layer.According to this hair
Bright one embodiment, the first sedimentary bulk density are less than second sedimentary, that is to say, that the first sedimentary is compared with second
Sedimentary has the roughness of bigger, can increase the adhesive force of back electrode；Second sedimentary is more fine and close compared with the first sedimentary,
Bulk density is big, and surface is smooth, and roughness is low, has better electric conductivity.In conjunction with 1022 rough surface layer of the second layer in the present invention,
The transformation efficiency of solar cell is set to significantly improve.
1022 surface of back electrode rough surface layer is light absorbing layer 103.Back electrode has glaze layer, then light absorbing layer thereon
Also there is smooth surface；Back electrode has rough surface layer, then light absorbing layer also has rough surface layer thereon.According to the present invention one
A embodiment, light absorbing layer can be CIGS thin film in homogeneous thickness.CIGS thin film is by copper (Cu), indium (In), gallium (Ga), selenium
(Se) the chalcopyrite crystallization that four kinds of elements are constituted in proportion, has p-type characteristic in solar cells.Replace indium according to wherein gallium
The difference of ratio, band gap width are continuously adjusted within the scope of 1.02eV to 1.65eV so that it can be applied to different illumination items
Under part.If band gap increases, selenium can also be replaced using thio, valence band is made to decline.According to one embodiment of present invention, light absorbing layer
It is plated in the back electrode surface that roughness is less than 30nm, accordingly also there is rough surface layer.By the light absorbing layer with rough surface layer
Solar cell is placed under sunlight, and rough surface reduces the reflection of luminous energy, and absorptivity increases.
The buffer layer 104 of 103 upper surface of light absorbing layer can reduce by two between light absorbing layer 103 and preceding electrode layer
Person's band gap discontinuity solves its lattice mismatch problem, to solve energy gap mismatch problem.According to the present invention one
A embodiment, using cadmium sulfide (CdS) as buffer layer, with N-type semiconductor material characteristic.Cadmium sulfide has higher
Light transmission rate can reduce the light loss of thin-film solar cells, to be effectively increased the electricity conversion of solar cell,
It is a kind of ideal solar cell battery buffer material.
Preceding electrode layer includes high resistant zinc oxide and low-resistance zinc oxide, respectively constitutes resistive formation 105 and transparent electrode layer 106.
According to one embodiment of present invention, resistive formation 105 is native oxide zinc layers (i-ZnO).Transparent electrode layer 106 can be as too
The top electrode of positive energy battery.In actual production, the combination material of n doping transparent conductive materials may be used in transparent electrode layer 106
Expect (n-ZnO), such as AZO, GZO, IZO, ITO.According to one embodiment of present invention, transparent electrode layer 106 uses aluminium
Doping zinc-oxide (AZO), visible light transmittance is high, and sheet resistance is low, can reduce series resistance losses, improves solar energy
The transformation efficiency of battery.Preceding electrode layer finally collectively constitutes the PN junction part of solar cell with light absorbing layer 103, realizes the sun
It can generating function.
Before grid 107 is coated on electrode layer, it to be used for collected current.Based on the above 101-107, ultimately form achievable
The solar cell of photovoltaic generation.
Fig. 2 is the preparation flow figure of thin-film solar cells according to an embodiment of the invention.As shown, preparing
The method 200 of solar cell includes the following steps：Substrate 201 is obtained first, chooses suitable material as solar cell
Substrate.According to one embodiment of present invention, selected substrate is soda-lime glass.According to optional embodiment of the present invention,
In practice and production, the selection of substrate may be other rigid materials such as glass, ceramics etc. or flexible material such as gold
Category, plastics etc..
After obtaining substrate 201, back electrode 202 is coated in the substrate chosen.According to one embodiment of present invention, it selects
It takes metal molybdenum as back electrode, is coated with the molybdenum back electrode layer of one layer of about 500nm on substrate by the method for magnetron sputtering.According to
One embodiment of the present of invention first uses the first sputtering pressure, the first sedimentary of 10-100nm is deposited in substrate, as attached
Layer；The second sputtering pressure is reused to continue to deposit the second sedimentary of 200-1000nm on it, as conductive layer, wherein the
One sputtering pressure is higher than the second sputtering pressure.It is such repeatedly to be sputtered by changing sputtering pressure, the attachment of back electrode can be improved
Power and electric conductivity.According to the environment of solar cell installation and required output electricity, one of which can also be used only and sputter
Mode is coated with back electrode layer.First sputtering pressure and the second sputtering pressure mentioned herein simultaneously refers not to specific air pressure, only phase
To concept.In actual production manufacturing process, sputtering pressure need to be adjusted according to actual use situation.
To back electrode surface modification treatment 203.According to one embodiment of present invention, using ion etching process realization pair
The surface modification treatment of back electrode.I.e. after the completion of being coated with back electrode 202, make it into Ar+The vacuum cavity in source utilizes
The voltage of about 1KV accelerates Ar+, etching back electrode surface about 2-10 minutes forms coarse film surface.It is related real through the invention
It tests and learns, roughness of ion etching 2-10 minutes formed rough surface layer is about 10-20nm under the conditions of this.Deionization etching side
Outside method, according to one embodiment of present invention, back electrode surface can also be made to be formed equally using the mode that mechanical sandblasting etches
The surface of degree of roughness.
The mode of etching is not limited to back electrode surface modification treatment 203.It according to one embodiment of present invention, can be with
Using magnetron sputtering method, it is continuing with third sputtering pressure and continues to be coated with molybdenum layer on coated back electrode surface.Wherein
Three sputtering pressures are higher than the second sputtering pressure.It should be understood readily by those skilled in this art, magnetron sputtering method is formed at high pressure
Film is loose porous, rough surface is may be implemented completely if controlling the time of air pressure and magnetron sputtering in back electrode surface shape
It is less than the rough surface layer of 30nm at roughness.
It is coated with light absorbing layer 204 on modified back electrode surface.According to one embodiment of present invention, using coevaporation method
It is coated with the light absorbing layer of thickness about 2000-3000nm, heretofore described light absorbing layer is cigs layer.It is according to the present invention another
One embodiment can also be coated with cigs layer using sputtering and selenization technique method.It will be appreciated by those skilled in the art that being coated with cigs layer
Method have very much, except above-mentioned listed two methods, also three steps steam method, electrochemical deposition method, spray pyrolysis method, screen printing altogether
Brush method etc..In the present invention coevaporation method and sputtering and selenization technique method used be existing research the most extensively, technology is more mature, prepares
The higher method of battery efficiency.According to one embodiment of present invention, evaporation can also be combined with sputtering and selenization technique method, is plated
It is CIGC layers processed.Since light absorbing layer is coated with based on back electrode, and back electrode surface is rough surface layer, so gained after being coated with
Cigs layer also has rough surface.
It is coated with buffer layer 205.According to one embodiment of present invention, buffer layer is cadmium sulfide.One according to the present invention
Embodiment is coated with the buffer layer of thickness about 40nm using chemical bath method on light absorbing layer surface.As those skilled in the art manage
Solution, buffer layer, which is coated with, can also use other methods, such as vacuum vapor deposition method, sputtered atom layer chemical vapour deposition technique, electro-deposition
Method etc..
It is coated with preceding electrode layer-resistive formation 206.According to one embodiment of present invention, using magnetron sputtering method in buffer layer
On be coated with the intrinsic zinc oxide film of thickness about 50nm.According to one embodiment of present invention, radio frequency sputtering method can also be used
It is coated with resistive formation.Resistive formation is coated with two methods without being limited thereto.
It is coated with preceding electrode layer-transparent electrode layer 207.According to one embodiment of present invention, transparent electrode layer adulterates for aluminium
Zinc oxide is coated with thickness about 300nm transparent electrode layers using magnetron sputtering method on resistive formation.In addition to this, it is coated with transparent electricity
Pole layer can also use radio frequency sputtering method, reactive sputtering etc., if you need to be coated on a large scale, direct current radio frequency method also can be used.
Finally it is coated with grid 208.Grid is deposited in battery surface, it is made finally to form battery with above each layer.
The solar cell prepared using method as above, battery performance are as shown in the table：
Table 1：
As shown in table 1, surface roughness is back electrode surface roughness in table, reflects the back of the body electricity with different volumes density
Pole surface layer.In the prior art, back electrode bulk density is about 10g/m3, roughness is about 4nm.Compared with the prior art, working as
When back electrode surface roughness increases to 15nm, open-circuit voltage VOCIt is constant, short-circuit current density JSCIt is increased significantly, the sun
It can cell conversion efficiency η apparent increases；When back electrode surface roughness increases to 30nm, short-circuit current density JSCAlthough there is increasing
Add, but its open-circuit voltage VOCReduce, fill factor FF reduces, and solar cell transformation efficiency η declines instead.But from table
As can be seen that when back electrode surface roughness is 15nm and 30nm, compared with prior art, short-circuit current density all increases,
Illustrate that improving surface roughness is conducive to increase absorptivity.
It is learnt by multigroup experiment, after back electrode surface modification treatment, when roughness is within the scope of 10-20nm, favorably
In raising solar cell transformation efficiency.Excessively coarse back electrode surface can influence the grain growth of CIGS, then influence too
The open-circuit voltage V of positive energy batteryOC, and then solar cell transformation efficiency is influenced, so that transformation efficiency is declined.
Above-described embodiment is used for illustrative purposes only, and is not limitation of the present invention, in relation to the general of technical field
Logical technical staff can also make a variety of changes and modification without departing from the present invention, therefore, all equivalent
Technical solution should also belong to scope disclosed by the invention.
Claims (9)
1. a kind of solar cell, including：
Substrate；
Back electrode layer is set to above the substrate, and the back electrode layer includes the first back electrode layer and the second back electrode layer,
First back electrode layer is less than first back electrode layer close to the substrate, the bulk density of second back electrode layer
Bulk density；
Light absorbing layer is arranged above second back electrode layer；And
Preceding electrode layer is arranged above the light absorbing layer.
2. solar cell according to claim 1, first back electrode layer and the second back electrode layer include metal molybdenum.
3. the thickness of solar cell according to claim 2, second back electrode layer is 5-30nm.
4. the thickness of solar cell according to claim 2, first back electrode layer is 300-1000nm.
5. solar cell according to claim 2, molybdenum content is about 6g/ in the second back electrode layer unit volume
cm3。
6. solar cell according to claim 2, molybdenum content is about 10g/ in the first back electrode layer unit volume
cm3。
7. solar cell according to claim 3, second back electrode layer has rough surface layer, roughness Ra Ra
＜ 30nm.
8. solar cell according to claim 1, first back electrode layer can further include the first deposition
Layer and the second sedimentary, the bulk density of first sedimentary are less than the bulk density of second sedimentary, wherein described
First sedimentary is close to the substrate.
9. solar cell method is prepared a kind of, including：
The first back electrode layer is prepared in substrate；
The second back electrode layer is prepared on first back electrode layer, wherein the bulk density of the second back electrode layer is less than described the
The bulk density of one back electrode layer；
Light absorbing layer is prepared on second back electrode layer；
Electrode layer before being prepared on the light absorbing layer.
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| CN101076895A (en) * | 2004-12-09 | 2007-11-21 | 昭和砚壳石油株式会社 | Cis-based thin film solar battery and process for producing the same |
| CN103354246A (en) * | 2013-07-10 | 2013-10-16 | 尚越光电科技有限公司 | CIGS (Copper Indium Gallium Selenium) solar cell back-electrode Mo film and preparation technology thereof |
| CN104067398A (en) * | 2011-11-21 | 2014-09-24 | Lg伊诺特有限公司 | Solar cell and method of fabricating the same |
| CN104813482A (en) * | 2012-11-09 | 2015-07-29 | 纳米技术有限公司 | Molybdenum substrates for CIGS photovoltaic devices |
| CN105355676A (en) * | 2015-11-18 | 2016-02-24 | 北京四方创能光电科技有限公司 | Back electrode structure of flexible CIGS thin-film solar cell |
| CN107887456A (en) * | 2017-10-30 | 2018-04-06 | 周燕红 | A kind of preparation method of back electrode molybdenum (Mo) film |
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2018
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| CN101076895A (en) * | 2004-12-09 | 2007-11-21 | 昭和砚壳石油株式会社 | Cis-based thin film solar battery and process for producing the same |
| CN104067398A (en) * | 2011-11-21 | 2014-09-24 | Lg伊诺特有限公司 | Solar cell and method of fabricating the same |
| CN104813482A (en) * | 2012-11-09 | 2015-07-29 | 纳米技术有限公司 | Molybdenum substrates for CIGS photovoltaic devices |
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