CN108511530B - Carbon nitride thin film field effect transistor - Google Patents
Carbon nitride thin film field effect transistor Download PDFInfo
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- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 title claims abstract description 81
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- 239000010408 film Substances 0.000 claims description 9
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- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 8
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 7
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- 229920000877 Melamine resin Polymers 0.000 claims description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 6
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 claims description 6
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 5
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- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- DPZSNGJNFHWQDC-ARJAWSKDSA-N (z)-2,3-diaminobut-2-enedinitrile Chemical compound N#CC(/N)=C(/N)C#N DPZSNGJNFHWQDC-ARJAWSKDSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 229930192474 thiophene Natural products 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 3
- YIKSCQDJHCMVMK-UHFFFAOYSA-N Oxamide Chemical compound NC(=O)C(N)=O YIKSCQDJHCMVMK-UHFFFAOYSA-N 0.000 claims description 2
- SOIFLUNRINLCBN-UHFFFAOYSA-N ammonium thiocyanate Chemical compound [NH4+].[S-]C#N SOIFLUNRINLCBN-UHFFFAOYSA-N 0.000 claims description 2
- 239000004202 carbamide Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 claims description 2
- BRWIZMBXBAOCCF-UHFFFAOYSA-N hydrazinecarbothioamide Chemical compound NNC(N)=S BRWIZMBXBAOCCF-UHFFFAOYSA-N 0.000 claims description 2
- 238000011068 loading method Methods 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims 1
- 238000011031 large-scale manufacturing process Methods 0.000 abstract 1
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- 239000010703 silicon Substances 0.000 description 4
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- WZRRRFSJFQTGGB-UHFFFAOYSA-N 1,3,5-triazinane-2,4,6-trithione Chemical compound S=C1NC(=S)NC(=S)N1 WZRRRFSJFQTGGB-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
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- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
Abstract
The invention belongs to the technical field of semiconductors and discloses a carbon nitride thin film field effect transistor. The field effect transistor comprises from bottom to top: the grid electrode, the dielectric layer, the carbon nitride channel layer, and the source electrode and the drain electrode which are distributed on two sides of the carbon nitride channel layer; wherein the dielectric layer completely separates the gate from the carbon nitride channel layer; the gate together with the dielectric layer constitutes the substrate of the transistor. The carbon nitride channel layer is deposited on the dielectric layer through a precursor sublimation in-situ polymerization method, and then a source electrode and a drain electrode are prepared, so that the carbon nitride field effect transistor is obtained. The carbon nitride transistor has cheap and easily available materials, low pollution, large-scale production and certain application significance in the field of organic photoelectric devices.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a carbon nitride thin film field effect transistor.
Background
Today, most integrated circuits are silicon-based, however, as the feature sizes of integrated circuits gradually decrease, existing silicon materials and processes have approached their physical limits and have encountered significant challenges. Unlike conventional materials, organic semiconductor materials have a series of unique physical and chemical properties. The method is not limited by size, the preparation process is relatively simple, and the requirement on conditions is not high. Meanwhile, the method can be widely researched by people for producing large-area flexible equipment, and has potential application prospects in numerous fields such as organic luminescence, organic solar cells, organic storage equipment and the like. For example, in 2001, International Business Machines (IBM) corporation of the united states pioneered the development of organic transistors using carbon nanotubes, which have even superior transistor performance over conventional silicon materials (Science, 2001, 292, 706-. In 2002, scientists at the university of cornell and harvard university in the united states successfully placed clusters of atoms equivalent in size to a single organic molecule between two electrodes to produce transistors of only about 1nm in size (Nature, 2002, 417, 722-. Although it exhibits very great potential advantages, the means of its preparation has been very limited to date.
Carbon nitride is an organic semiconductor material and is easy to prepare. The band gap of the traditional carbon nitride material is about 2.7eV, the structural design and adjustment are relatively easy, and films with different electronic characteristics can be prepared according to requirements, so that the carbon nitride material has the potential of being applied to electronic equipment. Such carbon nitride materials have a very compact molecular structure compared to a series of previously reported inorganic two-dimensional semiconductor materials (nat. Commun., 2015, 6, 6486; nat. Commun. 2016, 7, 13461, 13894; J. Am. chem. Soc., 2017, 139, 11666-11669), which enables electron mobility to be ensured. On the other hand, compared with the graphene nanosheet, the semiconductor band gap can ensure the obvious difference of the switch. The invention develops the field effect transistor by taking carbon nitride as a channel layer, realizes the feasibility of the application of the field effect transistor for the first time, and has commercial production value.
Disclosure of Invention
In view of the above, the present invention provides a carbon nitride thin film transistor. The invention takes the carbon nitride as the channel layer, thereby improving the performance of the organic field effect transistor.
In order to achieve the purpose, the invention adopts the following technical scheme:
the carbon nitride film field effect transistor comprises the following components from bottom to top: the grid electrode, the dielectric layer, the carbon nitride channel layer, and the source electrode and the drain electrode which are distributed on two sides of the carbon nitride channel layer; wherein the dielectric layer completely separates the gate from the carbon nitride channel layer; the gate together with the dielectric layer constitutes the substrate of the transistor.
The preparation method of the carbon nitride channel layer comprises the following steps: loading a precursor of carbon nitride into a high-temperature-resistant reactor, placing a substrate at an outlet of the reactor, and enabling a medium layer to face the outlet; depositing a carbon nitride film on the substrate by a gas phase sublimation in-situ polymerization method; the precursor of the carbon nitride comprises one or more of melamine, cyanuric acid, urea, thiourea, thiosemicarbazide, ammonium thiocyanate, oxamide, methylguanamine and dicyandiamide; the precursor of the carbon nitride can also be introduced with a monomer compound with electron-donating and/or electron-withdrawing capability to change the semiconductor characteristics of the carbon nitride, wherein the monomer compound with the electron-donating or electron-withdrawing capability comprises one of benzene ring, pyridine, thiophene and diaminomaleonitrile; the addition amount of the monomer compound with the electron donating or absorbing capacity is 0.01-10 wt% of the precursor of the carbon nitride.
The thickness of the dielectric layer is less than or equal to 100 nanometers; the dielectric layer material comprises SiO2、SiN、Al2O3One or more of (a).
The source electrode and the carbon nitride channel layer form ohmic contact.
The drain electrode and the carbon nitride channel layer form ohmic contact.
The invention has the beneficial effects that:
1) the invention provides a field effect transistor with a carbon nitride material as a channel layer, which is realized for the first time; compared with other similar organic field effect transistors, the organic field effect transistor has the advantages of good electron mobility and good on-off ratio, and the comparison is shown in the table 1.
2) The synthesis process is simple, has good controllability and repeatability, needs cheap and easily-obtained raw materials, and is beneficial to large-scale popularization.
Drawings
FIG. 1 is a schematic structural diagram of a carbon nitride thin film field effect transistor;
FIG. 2 is a schematic view of the molecular structure of carbon nitride, which is the closest molecular structure of the carbon nitride films formed in examples 1-5;
FIG. 3 is an atomic force microscope image of the carbon nitride film deposited on a silicon wafer obtained in example 1, showing an average thickness of about 150 nm;
FIG. 4 is an X-ray diffraction pattern of a carbon nitride film deposited on a silicon wafer obtained in examples 2 and 3; from the figure, it can be seen that the carbon nitride films prepared at different temperatures have relatively similar molecular structures.
FIG. 5 shows the mobility of the carbon nitride TFT deposited on a silicon wafer obtained in example 2.
Detailed Description
In order to make the present invention more comprehensible, the technical solutions of the present invention are further described below with reference to specific embodiments, but the present invention is not limited thereto.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a carbon nitride thin film field effect transistor according to an embodiment of the present invention. The carbon nitride thin film field effect transistor includes: source 101, drain 102, carbon nitride channel layer 103, dielectric layer 104, and gate 105. The dielectric layer 104 completely separates the carbon nitride channel layer 103 from the gate 105.
Optionally, the carbon nitride channel layer may incorporate other monomer compounds with electron donating or withdrawing ability to change its semiconductor properties, such as benzene ring, pyridine, thiophene, diaminomaleonitrile, and the like.
Optionally, the dielectric layer 104 is SiO2Layer, SiN layer, Al2O3Etc., or a combination of two or more thereof, for example, SiO2/SiN or Al2O3/SiN/SiO2And the like.
The thickness of the dielectric layer is less than or equal to 100 nanometers.
Optionally, the drain electrode 102 forms an ohmic contact with the carbon nitride channel layer 103. The drain 104 may be made of Au, Al, Ti, Sn, Ge, In, Ni, Co, Pt, W, Mo, Cr, Cu, P or a combination of two or more thereof, such as Ti/Au or Ti/Al/Ni/Au. Ohmic contact may be directly formed with the carbon nitride channel layer 103 through an evaporation process.
Optionally, the source 101 and the carbon nitride channel layer 103 form an ohmic contact. The drain 104 may be made of Au, Al, Ti, Sn, Ge, In, Ni, Co, Pt, W, Mo, Cr, Cu, P or a combination of two or more thereof, such as Ti/Au or Ti/Al/Ni/Au. Ohmic contact may be directly formed with the carbon nitride channel layer 103 through an evaporation process.
Example of preparation of carbon nitride channel layer:
example 1
The melamine was placed in a glass bottle with a radius of 1 cm and a height of 5 cm, and the bottle mouth was covered with the liner. The carbon nitride channel layer is obtained by placing the carbon nitride channel layer into a high-temperature air furnace for calcination, raising the temperature to 550 ℃ per minute at the temperature raising rate of 5 ℃, and keeping for 6 hours.
Example 2
The melamine was placed in a glass bottle with a radius of 1 cm and a height of 4 cm, and the bottle mouth was covered with the liner. The carbon nitride channel layer is obtained by placing the carbon nitride channel layer into a high-temperature air furnace for calcination, raising the temperature to 500 ℃ per minute at the temperature raising rate of 10 ℃, and keeping for 4 hours.
Example 3
The melamine was placed in a glass bottle with a radius of 1 cm and a height of 6 cm, and the bottle mouth was covered with the liner. The carbon nitride channel layer is obtained by putting the carbon nitride channel layer into a high-temperature air furnace for calcination, raising the temperature to 600 ℃ per minute at the temperature raising rate of 7 ℃, and keeping for 4 hours.
Example 4
The thiourea was placed in a glass bottle with a radius of 1 cm and a height of 6 cm, and then the substrate was covered on the bottle mouth. The carbon nitride channel layer is obtained by placing the carbon nitride channel layer into a high-temperature air furnace for calcination, raising the temperature to 550 ℃ per minute at the rate of 5 ℃, and keeping for 4 hours.
Example 5
Putting trithiocyanuric acid into a glass bottle with the radius of 2 cm and the height of 5 cm, and then covering the bottle opening with the substrate. And putting the carbon nitride layer into a high-temperature air furnace for calcination, heating to 550 ℃ per minute at the heating rate of 8 ℃, and keeping for 2 hours to obtain the carbon nitride channel layer.
Example 6
Melamine and diaminomaleonitrile were mixed in a ratio of 10:1, placed in a glass bottle with a radius of 1 cm and a height of 5 cm, and then the mouth of the bottle was covered with a substrate. The carbon nitride channel layer is obtained by putting the carbon nitride channel layer into a high-temperature air furnace for calcination, raising the temperature to 600 ℃ per minute at the temperature raising rate of 7 ℃, and keeping for 3 hours.
Example 7
Putting trithiocyanuric acid and thiophene into a glass bottle with the radius of 1 cm and the height of 5 cm at a ratio of 8:1, and then covering the bottle opening with a substrate. The carbon nitride channel layer is obtained by putting the carbon nitride channel layer into a high-temperature air furnace for calcination, raising the temperature to 600 ℃ per minute at the temperature raising rate of 7 ℃, and keeping for 4 hours.
Table 1 comparison of the performance of the field effect transistor using the carbon nitride material as the channel layer according to the present invention with that of other two-dimensional organic transistors
The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made in accordance with the claims of the present invention should be covered by the present invention.
Claims (6)
1. Carbon nitride film field effect transistor, characterized by: from bottom to top: the grid electrode, the dielectric layer, the carbon nitride channel layer, and the source electrode and the drain electrode which are distributed on two sides of the carbon nitride channel layer; wherein the dielectric layer completely separates the gate from the carbon nitride channel layer; the grid and the dielectric layer form a substrate of the transistor;
the precursor of the carbon nitride comprises one or more of melamine, trithiocyanic acid, urea, thiourea, thiosemicarbazide, ammonium thiocyanate, oxamide, methylguanamine and dicyandiamide; introducing a monomer compound with electron-donating or electron-withdrawing capability into a precursor of the carbon nitride to change the semiconductor characteristics of the carbon nitride, wherein the monomer compound with the electron-donating or electron-withdrawing capability comprises one of benzene ring, pyridine, thiophene and diaminomaleonitrile; the addition amount of the monomer compound with the electron donating or absorbing capacity is 0.01-10 wt% of the precursor of the carbon nitride.
2. The carbon nitride thin film field effect transistor of claim 1, wherein: the preparation method of the carbon nitride channel layer comprises the following steps: loading a precursor of carbon nitride into a high-temperature-resistant reactor, placing a substrate at an outlet of the reactor, and enabling a medium layer to face the outlet; depositing a carbon nitride film on the substrate by a gas phase sublimation in-situ polymerization method.
3. The carbon nitride thin film field effect transistor of claim 1, wherein: the thickness of the dielectric layer is less than or equal to 100 nanometers.
4. The carbon nitride thin film field effect transistor of claim 1, wherein: the dielectric layer material comprises SiO2、SiN、Al2O3One or more of (a).
5. The carbon nitride thin film field effect transistor of claim 1, wherein: the source electrode and the carbon nitride channel layer form ohmic contact.
6. The carbon nitride thin film field effect transistor of claim 1, wherein: the drain electrode and the carbon nitride channel layer form ohmic contact.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105925954A (en) * | 2016-05-27 | 2016-09-07 | 清华大学 | Preparation method of semiconductor carbon nitride films |
| CN107221564A (en) * | 2017-06-05 | 2017-09-29 | 国家纳米科学中心 | A kind of platelike molybdenumdisulfide field-effect transistor and its preparation method and application |
| CN107634099A (en) * | 2017-08-11 | 2018-01-26 | 上海集成电路研发中心有限公司 | A kind of two dimensional crystal material FET and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105925954A (en) * | 2016-05-27 | 2016-09-07 | 清华大学 | Preparation method of semiconductor carbon nitride films |
| CN107221564A (en) * | 2017-06-05 | 2017-09-29 | 国家纳米科学中心 | A kind of platelike molybdenumdisulfide field-effect transistor and its preparation method and application |
| CN107634099A (en) * | 2017-08-11 | 2018-01-26 | 上海集成电路研发中心有限公司 | A kind of two dimensional crystal material FET and preparation method thereof |
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| Title |
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| 二氨基马来腈共聚合改性氮化碳光催化剂;郑华荣，etal;《物理化学学报》;20120910;第2337页右栏第2段 * |
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