CN108511530A - Carbon nitride films field-effect transistor - Google Patents
Carbon nitride films field-effect transistor Download PDFInfo
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- CN108511530A CN108511530A CN201810236465.5A CN201810236465A CN108511530A CN 108511530 A CN108511530 A CN 108511530A CN 201810236465 A CN201810236465 A CN 201810236465A CN 108511530 A CN108511530 A CN 108511530A
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- carbonitride
- effect transistor
- carbon nitride
- nitride films
- channel layer
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- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 230000005669 field effect Effects 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 6
- 238000004220 aggregation Methods 0.000 claims abstract description 3
- 230000002776 aggregation Effects 0.000 claims abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 229920000877 Melamine resin Polymers 0.000 claims description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 6
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 claims description 6
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- DPZSNGJNFHWQDC-ARJAWSKDSA-N (z)-2,3-diaminobut-2-enedinitrile Chemical compound N#CC(/N)=C(/N)C#N DPZSNGJNFHWQDC-ARJAWSKDSA-N 0.000 claims description 4
- WZRRRFSJFQTGGB-UHFFFAOYSA-N 1,3,5-triazinane-2,4,6-trithione Chemical compound S=C1NC(=S)NC(=S)N1 WZRRRFSJFQTGGB-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 229930192474 thiophene Natural products 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 3
- XZMCDFZZKTWFGF-UHFFFAOYSA-N Cyanamide Chemical compound NC#N XZMCDFZZKTWFGF-UHFFFAOYSA-N 0.000 claims description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 2
- SOIFLUNRINLCBN-UHFFFAOYSA-N ammonium thiocyanate Chemical compound [NH4+].[S-]C#N SOIFLUNRINLCBN-UHFFFAOYSA-N 0.000 claims description 2
- 239000004202 carbamide Substances 0.000 claims description 2
- 238000006471 dimerization reaction Methods 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- -1 oxalyl ammonia Chemical compound 0.000 claims description 2
- 150000003583 thiosemicarbazides Chemical class 0.000 claims description 2
- 238000004821 distillation Methods 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 238000010792 warming Methods 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 244000025254 Cannabis sativa Species 0.000 description 1
- 206010054949 Metaplasia Diseases 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention belongs to technical field of semiconductors, disclose a kind of carbon nitride films field-effect transistor.The field-effect transistor includes from bottom to top：Grid, dielectric layer, carbonitride channel layer, and it is distributed in the source electrode and drain electrode of both sides on carbonitride channel layer；Its dielectric layer is completely separated by grid and carbonitride channel layer；Grid together forms the substrate of transistor with dielectric layer.Carbonitride channel layer is deposited on dielectric layer by presoma distillation situ aggregation method, is then prepared source electrode and drain electrode, is obtained carbonitride field-effect transistor.This kind of Carbon Nitride Crystal pipe material therefor is cheap and easy to get, and low stain can be mass-produced, and can have certain application value in organic electro-optic device field.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to a kind of carbon nitride films field-effect transistor.
Background technology
Now, most of integrated circuits are all based on silicon, however, being gradually reduced with integrated circuit feature size,
Existing silicon materials and technique have been approached their physics limit, encounter stern challenge.Organic semiconducting materials and tradition
Material is different, has a series of distinctive physics and chemical property.Its is not size-limited, and preparation flow is relatively simple, condition
It is of less demanding.Meanwhile can be applied to production large area flexible equipment and widely studied by people, and its organic light emission,
The various fields such as organic solar batteries, organic memory device also have potential application prospect.For example, in 2001,
U.S. International Business Machines（IBM）Company takes the lead in developing organic transistor with carbon nanotube, and the performance of transistor even compares
Traditional silicon materials are more excellent（Science, 2001, 292, 706-709）.And in 2002, Cornell Univ USA and Kazakhstan
The scientist of Buddhist university produces big successfully by sizableness between the elementide of single organic molecule is placed in two electrodes
Small is only the transistor of 1nm or so（Nature, 2002, 417, 722-725）.Although it shows very big potential excellent
Gesture, but up to the present, preparation means are still very limited.
Carbonitride is organic semiconducting materials, and preparation means are easy.The band gap of traditional carbon nitride material is about 2.7
EV, structure design and adjustment is opposite is easier to can be according to the film for requiring to prepare different characteristic electron, so having application
In the potential of electronic equipment.This kind of carbon nitride material (Nat. compared with a series of inorganic two-dimensional semiconductor materials reported before
Commun., 2015, 6, 6486; Nat. Commun. 2016, 7, 13461, 13894; J. Am. Chem.
Soc., 2017,139,11666-11669) there is molecular structure closely, can ensure electron mobility in this way.
And on the other hand, compared with graphene nanometer sheet, semiconductor band gap can ensure the significant difference of its switch.The present invention is directed to
Carbonitride develops field-effect transistor as channel layer, realizes the feasibility of its application in this respect for the first time, has quotient
The value of industry metaplasia production.
Invention content
In view of this, the purpose of the present invention is to provide a kind of carbon nitride films field-effect transistors.The present invention will nitrogenize
Carbon improves the performance of organic field effect tube as channel layer.
For achieving the above object, the present invention adopts the following technical scheme that：
Carbon nitride films field-effect transistor includes from bottom to top：Grid, dielectric layer, carbonitride channel layer, and it is distributed in nitrogen
Change the source electrode and drain electrode of both sides on carbon channel layer；Its dielectric layer is completely separated by grid and carbonitride channel layer；Grid and Jie
Matter layer together forms the substrate of transistor.
The preparation method of the carbonitride channel layer is：The presoma of carbonitride is fitted into high temperature resistant reactor, will be served as a contrast
Bottom is placed in reactor outlet, and dielectric layer faces outlet；By gas phase distillation situ aggregation method, cvd nitride carbon is thin on substrate
Film；The presoma of the carbonitride includes melamine, trithiocyanuric acid, urea, thiocarbamide, thiosemicarbazides, ammonium thiocyanate, grass
Acyl ammonia, methyl guanamines, one or more of cyanamid dimerization；May be incorporated into the presoma of carbonitride with electron and
Or the monomeric compound of electron-withdrawing ability changes the characteristic of semiconductor of carbonitride, described have electron or electron-withdrawing ability
Monomeric compound include one kind in phenyl ring, pyridine, thiophene, diaminomaleonitrile；With electron or electron-withdrawing ability
The addition of monomeric compound is 0.01 wt%-10 wt% of the presoma of carbonitride.
Thickness of dielectric layers≤100 nanometer；The dielectric layer material includes SiO2、SiN、Al2O3In one kind or
It is a variety of.
The source electrode forms Ohmic contact with the carbonitride channel layer.
The drain electrode forms Ohmic contact with the carbonitride channel layer.
The beneficial effects of the present invention are：
1）The field-effect transistor that the present invention provides a kind of using carbon nitride material as channel layer, to realize for the first time；With other
Similar organic field effect tube is compared, and relatively good electron mobility and on-off ratio are shown, relatively more as shown in table 1.
2）The synthesis technology is simple, and controllability and repeatability are good, and required raw material is cheap and easy to get, is conducive to push away on a large scale
Extensively.
Description of the drawings
Fig. 1 is the structural schematic diagram of carbon nitride films field-effect transistor；
Fig. 2 is the schematic arrangement of carbonitride, to do the closest molecule of the carbon nitride films to be formed in embodiment 1-5
Structure；
Fig. 3 is the carbon nitride films atomic force microscopy diagram that 1 gained of embodiment is deposited on silicon chip, it is seen that average thickness is about
150 nm or so；
Fig. 4 is the carbon nitride films X-ray diffractogram that 2,3 gained of embodiment is deposited on silicon chip；It is from figure it can be found that different
Carbon nitride films prepared by temperature have more similar molecular structure.
Fig. 5 is the mobility that 2 gained of embodiment is deposited on the carbon nitride films field-effect transistor on silicon chip.
Specific implementation mode
In order to make content of the present invention easily facilitate understanding, With reference to embodiment to of the present invention
Technical solution is described further, but the present invention is not limited only to this.
Carbon nitride films field-effect transistor, structure is referring to FIG. 1, Fig. 1 is carbonitride provided in an embodiment of the present invention
The structural schematic diagram of thin film field effect transistor.Carbon nitride films field-effect transistor includes：Source electrode 101, drain electrode 102, nitridation
Carbon channel layer 103, dielectric layer 104 and grid 105.The dielectric layer 104 completely separated carbonitride channel layer 103 and grid
105。
Optionally, the carbonitride channel layer can introduce other monomeric compounds with electron or electron-withdrawing ability
To change its characteristic of semiconductor, such as phenyl ring, pyridine, thiophene, diaminomaleonitrile.
Optionally, the dielectric layer 104 is SiO2Layer, SiN layer, Al2O3Deng or in which two or more combination,
For example, can be SiO2/ SiN or Al2O3/SiN/SiO2Deng.
Thickness≤100 nanometer of dielectric layer.
Optionally, the drain electrode 102 forms Ohmic contact with the carbonitride channel layer 103.Metal can be used in drain electrode 104
Au, Al, Ti, Sn, Ge, In, Ni, Co, Pt, W, Mo, Cr, Cu, P or in which two or more combination, for example, Ti/Au
Or Ti/Al/Ni/Au.By evaporation process, directly Ohmic contact can be formed with carbonitride channel layer 103.
Optionally, the source electrode 101 forms Ohmic contact with the carbonitride channel layer 103.Metal can be used in drain electrode 104
Au, Al, Ti, Sn, Ge, In, Ni, Co, Pt, W, Mo, Cr, Cu, P or in which two or more combination, for example, Ti/Au
Or Ti/Al/Ni/Au.By evaporation process, directly Ohmic contact can be formed with carbonitride channel layer 103.
The preparating example of carbonitride channel layer：
Embodiment 1
It is 1 centimetre that melamine, which is put into radius size, is highly 5 centimetres of vial, substrate is then covered bottleneck.By its
It is put into high temperature air stove and calcines, heating rate is that 5 centigrade per minutes are warming up to 550 degrees Celsius, is kept for 6 hours, obtained
Carbonitride channel layer.
Embodiment 2
It is 1 centimetre that melamine, which is put into radius size, is highly 4 centimetres of vial, substrate is then covered bottleneck.By its
It is put into high temperature air stove and calcines, heating rate is that 10 centigrade per minutes are warming up to 500 degrees Celsius, is kept for 4 hours, obtained
Carbonitride channel layer.
Embodiment 3
It is 1 centimetre that melamine, which is put into radius size, is highly 6 centimetres of vial, substrate is then covered bottleneck.By its
It is put into high temperature air stove and calcines, heating rate is that 7 centigrade per minutes are warming up to 600 degrees Celsius, is kept for 4 hours, obtained
Carbonitride channel layer.
Embodiment 4
It is 1 centimetre that thiocarbamide, which is put into radius size, is highly 6 centimetres of vial, substrate is then covered bottleneck.It puts it into
It is calcined in high temperature air stove, heating rate is that 5 centigrade per minutes are warming up to 550 degrees Celsius, is kept for 4 hours, obtains nitridation
Carbon channel layer.
Embodiment 5
It is 2 centimetres that trithiocyanuric acid, which is put into radius size, is highly 5 centimetres of vial, substrate is then covered bottleneck.It will
It is put into high temperature air stove and calcines, and heating rate is that 8 centigrade per minutes are warming up to 550 degrees Celsius, is kept for 2 hours, taken
Obtain carbonitride channel layer.
Embodiment 6
By melamine and diaminomaleonitrile with 10:1 ratio mixing, it is 1 centimetre to be put into radius size, is highly 5 centimetres
Vial, substrate is then covered into bottleneck.It puts it into high temperature air stove and calcines, heating rate is 7 centigrade per minutes
600 degrees Celsius are warming up to, is kept for 3 hours, obtains carbonitride channel layer.
Embodiment 7
By trithiocyanuric acid and thiophene with 8:1 to be put into radius size be 1 centimetre, is highly 5 centimetres of vial, then by substrate
Cover bottleneck.It puts it into high temperature air stove and calcines, heating rate is that 7 centigrade per minutes are warming up to 600 degrees Celsius, is kept
4 hours obtain carbonitride channel layer.
The field-effect transistor and other two-dimentional organic transistors using carbon nitride material as channel layer of 1 present invention of table
Performance compares
The foregoing is merely presently preferred embodiments of the present invention, all equivalent changes done according to scope of the present invention patent with repair
Decorations should all belong to the covering scope of the present invention.
Claims (9)
1. carbon nitride films field-effect transistor, it is characterised in that：Include from bottom to top：Grid, dielectric layer, carbonitride raceway groove
Layer, and it is distributed in the source electrode and drain electrode of both sides on carbonitride channel layer；Its dielectric layer is complete by grid and carbonitride channel layer
It separates entirely；Grid together forms the substrate of transistor with dielectric layer.
2. carbon nitride films field-effect transistor as described in claim 1, it is characterised in that：The system of the carbonitride channel layer
Preparation Method is：The presoma of carbonitride is fitted into high temperature resistant reactor, substrate is placed in reactor outlet, dielectric layer faces out
Mouthful；It is distilled situ aggregation method by gas phase, cvd nitride C film on substrate.
3. carbon nitride films field-effect transistor as claimed in claim 2, it is characterised in that：The presoma of the carbonitride
Including melamine, trithiocyanuric acid, urea, thiocarbamide, thiosemicarbazides, ammonium thiocyanate, oxalyl ammonia, methyl guanamines, cyanamid dimerization
One or more of.
4. carbon nitride films field-effect transistor as claimed in claim 2, it is characterised in that：It can in the presoma of carbonitride
Change the characteristic of semiconductor of carbonitride to introduce the monomeric compound with electron or electron-withdrawing ability, described having is given
The monomeric compound of electronics or electron-withdrawing ability includes one kind in phenyl ring, pyridine, thiophene, diaminomaleonitrile.
5. carbon nitride films field-effect transistor as claimed in claim 4, it is characterised in that：With electron or electrophilic energy
The addition of the monomeric compound of power is 0.01 wt%-10 wt% of the presoma of carbonitride.
6. carbon nitride films field-effect transistor as described in claim 1, it is characterised in that：The thickness of the dielectric layer≤
100 nanometers.
7. carbon nitride films field-effect transistor as described in claim 1, it is characterised in that：The dielectric layer material includes
SiO2、SiN、Al2O3In it is one or more.
8. carbon nitride films field-effect transistor as described in claim 1, it is characterised in that：The source electrode and the carbonitride
Channel layer forms Ohmic contact.
9. carbon nitride films field-effect transistor as described in claim 1, it is characterised in that：The drain electrode and the carbonitride
Channel layer forms Ohmic contact.
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| CN201810236465.5A CN108511530B (en) | 2018-03-21 | 2018-03-21 | Carbon nitride thin film field effect transistor |
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| CN108511530B CN108511530B (en) | 2020-09-01 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034177A (en) * | 2019-04-24 | 2019-07-19 | 深圳扑浪创新科技有限公司 | A kind of photoelectricity laminated film and application thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105925954A (en) * | 2016-05-27 | 2016-09-07 | 清华大学 | Preparation method of semiconductor carbon nitride films |
| CN107221564A (en) * | 2017-06-05 | 2017-09-29 | 国家纳米科学中心 | A kind of platelike molybdenumdisulfide field-effect transistor and its preparation method and application |
| CN107634099A (en) * | 2017-08-11 | 2018-01-26 | 上海集成电路研发中心有限公司 | A kind of two dimensional crystal material FET and preparation method thereof |
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2018
- 2018-03-21 CN CN201810236465.5A patent/CN108511530B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105925954A (en) * | 2016-05-27 | 2016-09-07 | 清华大学 | Preparation method of semiconductor carbon nitride films |
| CN107221564A (en) * | 2017-06-05 | 2017-09-29 | 国家纳米科学中心 | A kind of platelike molybdenumdisulfide field-effect transistor and its preparation method and application |
| CN107634099A (en) * | 2017-08-11 | 2018-01-26 | 上海集成电路研发中心有限公司 | A kind of two dimensional crystal material FET and preparation method thereof |
Non-Patent Citations (1)
| Title |
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| 郑华荣，ETAL: "二氨基马来腈共聚合改性氮化碳光催化剂", 《物理化学学报》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110034177A (en) * | 2019-04-24 | 2019-07-19 | 深圳扑浪创新科技有限公司 | A kind of photoelectricity laminated film and application thereof |
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