CN108504289A - A kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing polishing adjusting control agent - Google Patents
A kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing polishing adjusting control agent Download PDFInfo
- Publication number
- CN108504289A CN108504289A CN201810296660.7A CN201810296660A CN108504289A CN 108504289 A CN108504289 A CN 108504289A CN 201810296660 A CN201810296660 A CN 201810296660A CN 108504289 A CN108504289 A CN 108504289A
- Authority
- CN
- China
- Prior art keywords
- buddha
- polycrystalline silicon
- wire cutting
- adjusting control
- warrior attendant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/16—Other polishing compositions based on non-waxy substances on natural or synthetic resins
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention provides a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing polishing adjusting control agent, including following component and its mass percent：Dispersant 0.1% 1%, alkaline matter 0.1% 1%, wetting agent 0.005% 0.1%, intercalating agent 0.05% 0.5%, anti-redeposition agents 0.1% 1%, surplus are deionized water, stir and get product after each material mixing.Product of the present invention can adjust reacting for alkali and silicon in polycrystalline silicon texturing polishing process, remove polysilicon chip surface and oil contaminant and damaging layer, form silicon chip microprotrusion structure, not only have good osmosis, but also have the function of emulsification, suds, without cloud point etc.；And simple production process, raw material is cheap and easy to get, is free of to environmentally hazardous substance, is a kind of green product.
Description
Technical field
The present invention relates to technical field of solar cell manufacturing, and in particular to a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing throwing
Light adjusting control agent.
Background technology
Cost efficiency is the tireless pursuit of photovoltaic practitioner.At silicon chip end, Buddha's warrior attendant line cutting technology has been shown very
Big advantage, monocrystalline silicon piece rely on the large-scale application of Buddha's warrior attendant line cutting technology, and manufacturing cost is greatly reduced, polysilicon market by
This is squeezed so that polysilicon chip drops this pressure and further increases.However, polysilicon chip when using Buddha's warrior attendant wire cutting, passes through
After crossing polishing treatment, surface reflectivity higher and there are the open defects such as apparent stria, seriously reduces battery efficiency, hinder
The large-scale promotion of Buddha's warrior attendant wire cutting polysilicon chip.
Conventional silicon chip surface polishing or making herbs into wool, mainly use NaOH/ isopropanols (IPA) system, this is because silicon with
Alkali reacts the complex compound that will produce hydrogen and silicon, they can be adhered to one layer of silicon chip surface formation and be not easy to remove " mask ", hinder
Hinder lye to be contacted with silicon chip, silicon chip surface is made to form the defect of raindrop shape.The alcohols such as isopropanol are to removing silicon chip surface hydrogen gas
It is very good to steep effect, but isopropanol is hazardous to the human body, and can cause environmental pollution.
In order to improve production environment, control environmental pollution, need to develop novel adjusting control agent substitute traditional inorganic solvent or
Organic solvent class adjusting control agent.
Invention content
The object of the present invention is to provide a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturings to polish adjusting control agent, using dispersant, alkali
Property substance, intercalating agent etc. modulate, product has a good osmosis, also emulsification, suds, without functions such as cloud points；And
Simple production process, raw material is cheap and easy to get, is free of environmentally harmful substance, environmentally protective.
To achieve the goals above, the technical solution adopted by the present invention is as follows：
A kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing polishing adjusting control agent, including following component and its mass percent：Dispersion
Agent 0.1%-1%, alkaline matter 0.1%-1%, wetting agent 0.005%-0.1%, intercalating agent 0.05%-0.5%, anti-reprecipitation
Agent 0.1%-1%, surplus are deionized water.
According to above scheme, the dispersant be potassium lignosulfonate, sodium lignin sulfonate, or both mixture.
According to above scheme, the alkaline matter is any one in potassium hydroxide, sodium hydroxide, potassium carbonate, sodium carbonate
Kind or more than one mixture.
According to above scheme, the wetting agent be alkyl glycosides, naphthols polyoxyethylene ether, or both mixture.
According to above scheme, the intercalating agent is any one or one in sodium formate, potassium formate, sodium acetate, potassium acetate
Kind or more mixture.
According to above scheme, the anti-redeposition agents is sodium carboxymethylcellulose (CMC), including single viscosity or different viscous
One or more kinds of mixtures of the sodium carboxymethylcellulose of degree.
According to above scheme, including following component and its mass percent：Sodium lignin sulfonate 0.2%-0.8%, hydrogen-oxygen
Change mixture 0.2%-0.8%, naphthols polyoxyethylene ether 0.01%-0.05%, the sodium acetate 0.1%- of potassium and potassium carbonate
0.4%, viscosity is 100-2000cp sodium carboxymethylcellulose 0.2%-0.8%, surplus are deionized water.
The beneficial effects of the invention are as follows：
The adjusting control agent of the present invention can adjust reacting for alkali and silicon in polycrystalline silicon texturing polishing process, remove polysilicon chip
Surface and oil contaminant and damaging layer form silicon chip microprotrusion structure, not only have good osmosis, but also with emulsification, suppression
It steeps, without functions such as cloud points；And simple production process, raw material is cheap and easy to get, is free of to environmentally hazardous substance, is a kind of environmentally protective
Product.
Description of the drawings
Fig. 1 is not polished polysilicon chip surface topography schematic diagram；
Fig. 2 is using the polysilicon chip surface topography schematic diagram after 1 product polishing of the embodiment of the present invention；
Fig. 3 is using the polysilicon chip surface topography schematic diagram after 2 product polishing of the embodiment of the present invention；
Fig. 4 is using the polysilicon chip surface topography schematic diagram after 3 product polishing of the embodiment of the present invention.
Specific implementation mode
Technical scheme of the present invention is illustrated with embodiment below in conjunction with the accompanying drawings.
Embodiment 1, is shown in Fig. 1 and Fig. 2：
The present invention provides a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing polishing adjusting control agent, including following component and its quality hundred
Divide ratio：Sodium lignin sulfonate 0.6%, potassium hydroxide and potassium carbonate mixtures 0.29%, naphthols polyoxyethylene ether 0.02%, acetic acid
Sodium 0.2%, CMC 0.6%, surplus are deionized water.
It accurately weighs in above-mentioned each raw material input reaction kettle, at room temperature, after being stirred 1 hour, amber transparent is made
Liquid, as making herbs into wool of the invention polish adjusting control agent, and the pH value for measuring product is：12.76.
The product of the present embodiment and potassium hydroxide are configured to polishing fluid by following mass percent：22L48wt%KOH,
0.75L the present embodiment product, 128L deionized waters.By in above-mentioned each raw material input polishing trough, cycle is uniformly mixed and is warming up to
78 DEG C, not polished polysilicon chip (surface topography is shown in Fig. 1) being polished 200 seconds, wafer thinning amount is 1.49%,
Silicon chip surface is in microprotrusion structure, and TEM figures are shown in Fig. 2.
Embodiment 2, is shown in Fig. 3：
The present invention provides a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing polishing adjusting control agent, including following component and its quality hundred
Divide ratio：Sodium lignin sulfonate 0.2%, potassium hydroxide and potassium carbonate mixtures 0.29%, naphthols polyoxyethylene ether 0.01%, acetic acid
Sodium 0.05%, CMC 0.3%, surplus are deionized water.
The preparation method is the same as that of Example 1, and the pH value for measuring product is：12.50.
The product of the present embodiment and potassium hydroxide are configured to polishing fluid and to polysilicon chip by the identical method of embodiment
It is polished, wafer thinning amount is 2.44%, and silicon chip surface is in microprotrusion structure, and TEM figures are shown in Fig. 3.
Embodiment 3, is shown in Fig. 4：
The present invention provides a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing polishing adjusting control agent, including following component and its quality hundred
Divide ratio：Sodium lignin sulfonate 0.2%, potassium hydroxide and potassium carbonate mixtures 0.26%, alkyl glycosides 0.06%, sodium acetate
0.1%, CMC 0.4%, surplus are deionized water.
The preparation method is the same as that of Example 1, and the pH value for measuring product is：12.70.
The product of the present embodiment and potassium hydroxide are configured to polishing fluid and to polysilicon chip by the identical method of embodiment
It is polished, wafer thinning amount is 2.25%, and silicon chip surface is in microprotrusion structure, and TEM figures are shown in Fig. 4.
The above embodiments are only used to illustrate and not limit the technical solutions of the present invention, although above-described embodiment to the present invention into
Detailed description is gone, the related technical personnel of this field should understand that：It can modify to the present invention or replace on an equal basis, but
Any modification and part replacement for not departing from spirit and scope of the invention should all be covered in scope of the presently claimed invention.
Claims (7)
1. a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing polishes adjusting control agent, which is characterized in that including following component and its quality hundred
Divide ratio：Dispersant 0.1%-1%, alkaline matter 0.1%-1%, wetting agent 0.005%-0.1%, intercalating agent 0.05%-
0.5%, anti-redeposition agents 0.1%-1%, surplus are deionized water.
2. Buddha's warrior attendant wire cutting polycrystalline silicon texturing according to claim 1 polishes adjusting control agent, which is characterized in that the dispersion
Agent be potassium lignosulfonate, sodium lignin sulfonate, or both mixture.
3. Buddha's warrior attendant wire cutting polycrystalline silicon texturing according to claim 1 polishes adjusting control agent, which is characterized in that the alkalinity
Substance is any one or more than one mixture in potassium hydroxide, sodium hydroxide, potassium carbonate, sodium carbonate.
4. Buddha's warrior attendant wire cutting polycrystalline silicon texturing according to claim 1 polishes adjusting control agent, which is characterized in that the wetting
Agent be alkyl glycosides, naphthols polyoxyethylene ether, or both mixture.
5. Buddha's warrior attendant wire cutting polycrystalline silicon texturing according to claim 1 polishes adjusting control agent, which is characterized in that the chelating
Agent is any one or more than one mixture in sodium formate, potassium formate, sodium acetate, potassium acetate.
6. Buddha's warrior attendant wire cutting polycrystalline silicon texturing according to claim 1 polishes adjusting control agent, which is characterized in that described to resist again
Precipitating reagent is sodium carboxymethylcellulose, includes the one or more of the sodium carboxymethylcellulose of single viscosity or different viscosities
Mixture.
7. Buddha's warrior attendant wire cutting polycrystalline silicon texturing according to claim 1 polishes adjusting control agent, which is characterized in that including as follows
Component and its mass percent：The mixture 0.2%- of sodium lignin sulfonate 0.2%-0.8%, potassium hydroxide and potassium carbonate
0.8%, naphthols polyoxyethylene ether 0.01%-0.05%, sodium acetate 0.1%-0.4%, the carboxymethyl that viscosity is 100-2000cp
Sodium cellulosate 0.2%-0.8%, surplus are deionized water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810296660.7A CN108504289A (en) | 2018-04-03 | 2018-04-03 | A kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing polishing adjusting control agent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810296660.7A CN108504289A (en) | 2018-04-03 | 2018-04-03 | A kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing polishing adjusting control agent |
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| CN108504289A true CN108504289A (en) | 2018-09-07 |
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| CN201810296660.7A Pending CN108504289A (en) | 2018-04-03 | 2018-04-03 | A kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing polishing adjusting control agent |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111321471A (en) * | 2019-03-25 | 2020-06-23 | 杭州飞鹿新能源科技有限公司 | Low-weight monocrystalline silicon texturing additive and application thereof |
| CN113528097A (en) * | 2021-08-19 | 2021-10-22 | 江苏美科太阳能科技有限公司 | Cooling liquid for cutting solar-grade silicon wafer by diamond wire in fine-line manner and preparation method of cooling liquid |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101779274A (en) * | 2007-08-15 | 2010-07-14 | 3M创新有限公司 | Be used to modify the composition and the method on the surface that is suitable for semiconductor fabrication |
| CN102169818A (en) * | 2009-12-17 | 2011-08-31 | 罗门哈斯电子材料有限公司 | Improved method of texturing semiconductor substrates |
| CN102479698A (en) * | 2010-11-24 | 2012-05-30 | 气体产品与化学公司 | Compositions and methods for texturing of silicon wafers |
| CN106222756A (en) * | 2016-09-30 | 2016-12-14 | 杭州飞鹿新能源科技有限公司 | Additive and application process thereof for diamond wire cutting fine-hair maring using monocrystalline silicon slice |
-
2018
- 2018-04-03 CN CN201810296660.7A patent/CN108504289A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101779274A (en) * | 2007-08-15 | 2010-07-14 | 3M创新有限公司 | Be used to modify the composition and the method on the surface that is suitable for semiconductor fabrication |
| CN102169818A (en) * | 2009-12-17 | 2011-08-31 | 罗门哈斯电子材料有限公司 | Improved method of texturing semiconductor substrates |
| CN102479698A (en) * | 2010-11-24 | 2012-05-30 | 气体产品与化学公司 | Compositions and methods for texturing of silicon wafers |
| CN106222756A (en) * | 2016-09-30 | 2016-12-14 | 杭州飞鹿新能源科技有限公司 | Additive and application process thereof for diamond wire cutting fine-hair maring using monocrystalline silicon slice |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111321471A (en) * | 2019-03-25 | 2020-06-23 | 杭州飞鹿新能源科技有限公司 | Low-weight monocrystalline silicon texturing additive and application thereof |
| CN111321471B (en) * | 2019-03-25 | 2021-05-11 | 杭州飞鹿新能源科技有限公司 | Low-weight monocrystalline silicon texturing additive and application thereof |
| CN113528097A (en) * | 2021-08-19 | 2021-10-22 | 江苏美科太阳能科技有限公司 | Cooling liquid for cutting solar-grade silicon wafer by diamond wire in fine-line manner and preparation method of cooling liquid |
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| PB01 | Publication | ||
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Application publication date: 20180907 |