CN108493267A - A kind of crystal silicon selective emitter industrialization printing contraposition method - Google Patents
A kind of crystal silicon selective emitter industrialization printing contraposition method Download PDFInfo
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- CN108493267A CN108493267A CN201810374324.XA CN201810374324A CN108493267A CN 108493267 A CN108493267 A CN 108493267A CN 201810374324 A CN201810374324 A CN 201810374324A CN 108493267 A CN108493267 A CN 108493267A
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- 238000007639 printing Methods 0.000 title claims abstract description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 33
- 239000010703 silicon Substances 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000013078 crystal Substances 0.000 title claims abstract description 13
- 238000002360 preparation method Methods 0.000 claims abstract description 21
- 238000007650 screen-printing Methods 0.000 claims abstract description 9
- 238000010330 laser marking Methods 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims description 14
- 239000011574 phosphorus Substances 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 11
- 230000005684 electric field Effects 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 5
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 10
- 230000004048 modification Effects 0.000 abstract description 5
- 238000012986 modification Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 206010021703 Indifference Diseases 0.000 description 1
- 206010054949 Metaplasia Diseases 0.000 description 1
- 101100409194 Rattus norvegicus Ppargc1b gene Proteins 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of crystal silicon selective emitter industrialization printing contraposition methods, include the following steps：Step 1: silicon chip pre-processes；Step 2: the preparation of P N knots；Step 3: SE laser dopings；Step 4: the preparation of MARK points：Adjust laser parameter so that laser marking energy of the MARK points in radium-shine preparation process is higher than the energy of SE laser dopings；Step 5: silicon chip is reprocessed；Step 6: back side silk-screen printing；Step 7: front contraposition silk-screen printing；Step 8: sintering test.The present invention has carried out two kinds of modification modes to existing SE technologies laser MARK points, wherein laser marking energy of new MARK points during radium-shine is higher than the energy of radium-shine doping line, the coloration in radium-shine area and pattern is made to generate significant difference with non-radium-shine area；Rectangular MARK points are got with square laser hot spot simultaneously eliminates edge irregularity, confirms after observation machine printing whether offset is exceeded and the direction of offset, highly promotes convenient for naked eyes.
Description
Technical field
The present invention relates to screen printing technique field, specially a kind of crystal silicon selective emitter industrialization printing contraposition side
Method.
Background technology
With the continuous development of crystalline silicon technologies, the expansion of manufacture of solar cells scale and the continuous drop of battery price
It is low, it reduces production cost, improve the emphasis that efficiency is battery technology development.For existing routine perc batteries, positive mask
Have higher junction depth and a phosphorus concentration, and the height of repellel it is compound can cause it is lower hold pressure and short circuit current, and selectivity emits
Electrode is because it is in the region low concentration doping for receiving illumination, highly doped under metal grid lines, the lateral height junction structure of formation
Potential difference between increase P-N junction, reduction diffusion layer is compound and reduces metal contact zone resistance, to make battery performance integrally be carried
Height, and the technology can be carried with a variety of back sides effect technology superposition, further promoted convenient for battery efficiency and equipment, material at
This compatibility uses.Currently used technology is secondary diffusion method, wet method mask method, phosphorus starch print process and laser doping method etc.,
Middle laser doping method because its process route is simplified and compatibility is high, gradually producing by the advantages such as equipment, addition main and supplementary materials are of low cost
Expand market in the production of industry metaplasia and applies share.In SE cell piece printing process, in order to ensure printing thin grid line in laser region
It is interior, printing calibration is carried out in such a way that laser gets loci, because the radium-shine width of laser selective only has 100-120 μ
M, and print grid line width at 40-50 μm or so, so as to cause only 30 μm or so of offset window of printing, this essence to printing contraposition
Parasexuality requirement is very high, and the alignment issues of laser graphics and printed pattern are the passes that selective emitter crystal silicon battery puies forward effect
Key.
Existing crystalline silicon selective emitter solar battery there is a problem of in volume production one it is notable be exactly to print grid
The alignment issues of line and the radium-shine doping lines of SE, print only 30 μm or so of adjustable offset window, laser are needed in actual production
Doping line is accurately aligned with printing grid line center, and in existing technology, alignment issues are amplified out two and more significantly lacked
It falls into：
1, it is all made of in laser doping while laser goes out the MARK points of printing contraposition, MARK points are a diameter of 0.5mm
Filled circles, due to the color distortion and pattern in laser doping area and undoped region almost indifference, and SE in practical volume production
Also to pass through 6 production processes after laser doping could be printed, and can not be observed with the naked eye and be substantially aligned with situation and offset
Amount；
2, because single laser facula shape is rectangular, the edge of contraposition null circle can be caused by going out round loci for laser
Scrambling, so as to cause printing camera when aligning MARK points, since CCD will produce volume to the crawl identification deviation of MARK points
Outer offset.
Invention content
It is above-mentioned to solve the purpose of the present invention is to provide a kind of crystal silicon selective emitter industrialization printing contraposition method
The problem of being proposed in background technology.
To achieve the above object, the present invention provides the following technical solutions：
A kind of crystal silicon selective emitter industrialization printing contraposition method, includes the following steps：
Step 1: silicon chip pre-processes：Prerinse is carried out to silicon chip and is prepared by matte；
Step 2: the preparation of P-N junction：Adjust N2Amount, oxygen-supply quantity, phosphorus source amount and diffusion temperature, utilize thermal diffusion process
The sheet resistance prepared phosphorus-diffused layer, and control diffusion layer is 100-180 Ω；
Step 3: SE laser dopings：The position of the thin grid line of front side of silicon wafer preparation type metal is selected using laser
Property doping, melted by local laser so that the phosphorus of laser-scanning position is further spread, and is mixed to form high local concentrations phosphorus
It is miscellaneous so that the sheet resistance value in the region is reduced to 60-90 Ω；
Step 4: the preparation of MARK points：Adjust laser parameter so that laser marking of the MARK points in radium-shine preparation process
Energy is higher than the energy of SE laser dopings, and rectangular MARK points are formed on the position of metal primary；
Step 5: silicon chip is reprocessed：Back-etching is carried out to silicon chip and removes PSG, is annealed, aluminum oxide passivation film and the positive back side
It is prepared by SiNx layer technique；
Step 6: back side silk-screen printing：Laser slotting is carried out in silicon chip back side, back electrode is carried out to the back side and carries on the back electric field
Printing；
Step 7: front contraposition silk-screen printing：After back electrode and back of the body electric field printing, 180 ° of overturning cell pieces, to swash
Optical scanning prepare four rectangular MARK points be printing contraposition point, adjust positive electrode printing machine platform camera successfully capture four it is rectangular
The position of MARK points so that the corresponding step 3 that is imprinted on of the thin grid line energy of metal is formed by high concentration phosphorus doping region；
After printing, the position relationship of comparison printing grid line and rectangular MARK points is observed by the naked eye, judges printing offset
Direction, and be adjusted in time, after drift condition is adjusted to center alignment, start the printing of bulk SE batteries；
Step 8: sintering test：It dries, be sintered positive back metal slurry, test stepping, complete SE batteries and prepare.
Preferably, the size of the rectangular MARK points is 0.5mm, and the preparation power setting of MARK points is 20-30W, and is carved
It carves speed and is reduced to 100-10000mm/s.
Preferably, the rectangular MARK points are solid squares MARK points.
Preferably, the rectangular MARK points are the rectangular MARK points of hollow out, and thin grid line needs in printing are rectangular in hollow out
Main grid is passed through in the position of MARK points.
Compared with prior art, the beneficial effects of the invention are as follows：
1, the accuracy of printing camera crawl contraposition MARK points is improved；
2, facilitating can naked eyes preliminary observation offset in crystal silicon selective emitter battery volume production；
3, it reduces in volume production and is taken caused by contraposition, reduce contraposition and take the influence caused to production capacity.
The present invention has carried out two kinds of modification modes to existing SE technologies laser MARK points, wherein new MARK points are radium-shine
Laser marking energy in the process is higher than the energy of radium-shine doping line, using the mark of multiple sizes of rectangular superposition
Figure makes the coloration in radium-shine area and pattern generate significant difference with non-radium-shine area；MARK points rectangular simultaneously are with square laser light
Spot, which is got, eliminates edge irregularity, and the mark laser energy of two kinds of MARK points is higher than the energy of radium-shine doping line,
In printing process, on the one hand it is convenient for camera CCD crawl identification MARK points to reduce additional offset, is on the other hand convenient for naked eyes
Confirm after observation machine printing whether offset is exceeded and the direction of offset, the convenient printing machine platform that timely carries out are adjusted,
Highly promote.
Description of the drawings
Fig. 1 is the printing contraposition method flow schematic diagram of the present invention；
Fig. 2 is selective emitter laser doping and the solid squares MARK point schematic diagram of the present invention；
Fig. 3 is the A plot structure enlarged diagrams of the present invention；
Fig. 4 is selective emitter laser doping and the rectangular MARK points schematic diagram of hollow out of the present invention；
Fig. 5 is the B plot structure enlarged diagrams of the present invention；
Fig. 6 is the thin aperture plate version pictorial diagram of screen-printed metal of the present invention；
Fig. 7 is the rectangular MARK points of hollow out of the present invention and thin grid connection diagram.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
- 7 are please referred to Fig.1, the present invention provides a kind of technical solution：
A kind of crystal silicon selective emitter industrialization printing contraposition method, includes the following steps：
Step 1: silicon chip pre-processes：Prerinse is carried out to silicon chip and is prepared by matte.
Step 2: the preparation of P-N junction：Adjust N2Amount, oxygen-supply quantity, phosphorus source amount and diffusion temperature, utilize thermal diffusion process
The sheet resistance prepared phosphorus-diffused layer, and control diffusion layer is 160 Ω.
Step 3: SE laser dopings：The position of the thin grid line of front side of silicon wafer preparation type metal is set in advance using laser
The figure set carries out selective doping, is melted by local laser so that the phosphorus of laser-scanning position is further spread, to shape
At high local concentrations phosphorus doping so that the sheet resistance value in the region is reduced to 80 Ω, and selective laser adulterates figure such as Figure of description 2
Shown in Figure of description 4, all line segments, which are laser, needs surface sweeping position.
Step 4: the preparation of MARK points：It needs individually to select laser parameter in laser MARK points, adjustment swashs
The size of optical parameter, the rectangular MARK points is 0.5mm, and the preparation power setting of MARK points is 28W, and carving speed is reduced to
1000mm/s so that laser marking energy of the MARK points in radium-shine preparation process is higher than the energy of SE laser dopings,
The position of loci on rectangular MARK points, and positive halftone needed for printing, position such as explanation are formed on the position of metal primary
Shown in book attached drawing 2 and Figure of description 4, thin grid line position is reserved in the wherein laser parameter of laser scanning contraposition MARK points and scanning
Parameter it is different, the modification for individually carrying out parameter is needed, to obtain better loci pattern and facilitate identification.
Rectangular MARK points are divided into two kinds, and one kind is solid squares MARK points, as shown in Figure of description 3, and solid squares
Position of the MARK points on main grid does not have particular/special requirement；Another kind is that the rectangular MARK points of hollow out are engraved as shown in Figure of description 5
The use of short side shape MARK points, needs thin grid line to pass through main grid in the position of MARK, is equipped with to MARK points required.
For step 3 and step 4, SE laser dopings and the preparation of MARK points may be used synchronous radium-shine mode into
Row saves the plenty of time and, by the difference of radium-shine energy, directly prepares MARK points while laser doping.
Step 5: silicon chip is reprocessed：Back-etching is carried out to silicon chip and removes PSG, is annealed, aluminum oxide passivation film and the positive back side
It is prepared by SiNx layer technique.
Step 6: back side silk-screen printing：Laser slotting is carried out in silicon chip back side, back electrode is carried out to the back side and carries on the back electric field
Printing.
Step 7: front contraposition silk-screen printing：After back electrode and back of the body electric field printing, 180 ° of overturning cell pieces, to swash
Optical scanning prepare four rectangular MARK points be printing contraposition point, adjust positive electrode printing machine platform camera successfully capture four it is rectangular
The position of MARK points so that the corresponding step 3 that is imprinted on of the thin grid line energy of metal is formed by high concentration phosphorus doping region；
When printing machine platform camera is inaccurate, need in the case of adjusting printing position, use four hollow outs rectangular for pair
The rectangular MARK points in position, printing machine platform camera are printed after capturing four rectangular MARK points, after printing, observe by the naked eye comparison
The position relationship of the laser rays among grid line and rectangular MARK point hollow outs, this kind of situation are printed, printing screen plate loci is in thin
On the direction that grid pass through, as shown in Figure of description 7, it is easier to judge the direction of printing offset, and is adjusted in time, when
After drift condition is adjusted to center alignment, start the printing of bulk SE batteries.
Step 8: sintering test：It dries, be sintered positive back metal slurry, test stepping, complete SE batteries and prepare.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
Understanding without departing from the principles and spirit of the present invention can carry out these embodiments a variety of variations, modification, replace
And modification, the scope of the present invention is defined by the appended.
Claims (4)
1. a kind of crystal silicon selective emitter industrialization printing contraposition method, which is characterized in that include the following steps：
Step 1: silicon chip pre-processes：Prerinse is carried out to silicon chip and is prepared by matte；
Step 2: the preparation of P-N junction：Adjust N2Amount, oxygen-supply quantity, phosphorus source amount and diffusion temperature, are prepared using thermal diffusion process
Phosphorus-diffused layer, and the sheet resistance for controlling diffusion layer is 100-180 Ω；
Step 3: SE laser dopings：Selectivity is carried out using laser to the position of the thin grid line of front side of silicon wafer preparation type metal to mix
It is miscellaneous, it is melted by local laser so that the phosphorus of laser-scanning position is further spread, to form high local concentrations phosphorus doping,
So that the sheet resistance value in the region is reduced to 60-90 Ω；
Step 4: the preparation of MARK points：Adjust laser parameter so that laser marking energy of the MARK points in radium-shine preparation process
It is higher than the energy of SE laser dopings, forms rectangular MARK points on the position of metal primary；
Step 5: silicon chip is reprocessed：Back-etching is carried out to silicon chip and removes PSG, is annealed, aluminum oxide passivation film and positive back side SiNx
It is prepared by layer process；
Step 6: back side silk-screen printing：Laser slotting is carried out in silicon chip back side, back electrode is carried out to the back side and carries on the back the print of electric field
Brush；
Step 7: front contraposition silk-screen printing：After back electrode and back of the body electric field printing, 180 ° of overturning cell pieces are swept with laser
Four rectangular MARK points for retouching preparation are printing contraposition point, adjust positive electrode printing machine platform camera and successfully capture four rectangular MARK
The position of point so that the corresponding step 3 that is imprinted on of the thin grid line energy of metal is formed by high concentration phosphorus doping region；
After printing, the position relationship of comparison printing grid line and rectangular MARK points is observed by the naked eye, judges the direction of printing offset,
And be adjusted in time, after drift condition is adjusted to center alignment, start the printing of bulk SE batteries；
Step 8: sintering test：It dries, be sintered positive back metal slurry, test stepping, complete SE batteries and prepare.
2. a kind of crystal silicon selective emitter industrialization printing contraposition method according to claim 1, it is characterised in that：Institute
The size for stating rectangular MARK points is 0.5mm, and the preparation power setting of MARK points is 20-30W, and carving speed is reduced to 100-
10000mm/s。
3. a kind of crystal silicon selective emitter industrialization printing contraposition method according to claim 1, it is characterised in that：Institute
It is solid squares MARK points to state rectangular MARK points.
4. a kind of crystal silicon selective emitter industrialization printing contraposition method according to claim 1, it is characterised in that：Institute
It is the rectangular MARK points of hollow out to state rectangular MARK points, and thin grid line needs to pass through master in the position of the rectangular MARK points of hollow out in printing
Grid.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810374324.XA CN108493267B (en) | 2018-04-24 | 2018-04-24 | A kind of crystal silicon selective emitter industrialization printing contraposition method |
| PCT/CN2018/118252 WO2019205631A1 (en) | 2018-04-24 | 2018-11-29 | Industrial printing alignment method for crystalline silicon selective emitter |
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| CN201810374324.XA CN108493267B (en) | 2018-04-24 | 2018-04-24 | A kind of crystal silicon selective emitter industrialization printing contraposition method |
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| CN108493267B CN108493267B (en) | 2019-06-07 |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108550653A (en) * | 2018-04-24 | 2018-09-18 | 通威太阳能（合肥）有限公司 | A kind of anti-offset compensation method of SE batteries printing contraposition detection |
| CN109713064A (en) * | 2018-12-26 | 2019-05-03 | 盐城阿特斯协鑫阳光电力科技有限公司 | A kind of selective emitter, preparation method and solar battery and its application using it |
| CN109742049A (en) * | 2018-11-23 | 2019-05-10 | 苏州迈为科技股份有限公司 | A kind of cell piece alignment method and laser aid |
| CN110370830A (en) * | 2019-07-29 | 2019-10-25 | 百力达太阳能股份有限公司 | A kind of method of sight check printing quality |
| WO2019205631A1 (en) * | 2018-04-24 | 2019-10-31 | 通威太阳能（合肥）有限公司 | Industrial printing alignment method for crystalline silicon selective emitter |
| CN111490131A (en) * | 2020-04-26 | 2020-08-04 | 江西展宇新能科技有限公司 | Preparation treatment method of SE battery |
| CN111682090A (en) * | 2020-06-17 | 2020-09-18 | 广东爱旭科技有限公司 | Preparation method of selective emitter solar cell and solar cell |
| CN112117352A (en) * | 2020-09-25 | 2020-12-22 | 通威太阳能(眉山)有限公司 | Method for tracing production information of crystalline silicon cell by using laser line |
| CN112428714A (en) * | 2020-10-21 | 2021-03-02 | 浙江爱旭太阳能科技有限公司 | Alignment method of electrode printing system of SE (selective emitter) laminated cell |
| CN112455108A (en) * | 2020-10-30 | 2021-03-09 | 江苏润阳悦达光伏科技有限公司 | Process method for preventing printing offset in SE battery production process |
| CN112477459A (en) * | 2020-10-21 | 2021-03-12 | 浙江爱旭太阳能科技有限公司 | Alignment method of SE (selective emitter) laminated cell printing system |
| CN114267750A (en) * | 2021-12-13 | 2022-04-01 | 通威太阳能（安徽）有限公司 | Graphical laser doping method and device |
| CN114361291A (en) * | 2021-12-24 | 2022-04-15 | 通威太阳能（安徽）有限公司 | Heavily doped silicon wafer, crystalline silicon solar cell and preparation method thereof |
| CN118366908A (en) * | 2024-04-28 | 2024-07-19 | 德沪涂膜设备(苏州)有限公司 | Crystal silicon alignment device and film coating equipment |
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| CN108550653A (en) * | 2018-04-24 | 2018-09-18 | 通威太阳能（合肥）有限公司 | A kind of anti-offset compensation method of SE batteries printing contraposition detection |
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| CN113851410A (en) * | 2018-11-23 | 2021-12-28 | 苏州迈为科技股份有限公司 | Battery piece printing alignment method |
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| WO2023116029A1 (en) * | 2021-12-24 | 2023-06-29 | 通威太阳能（安徽）有限公司 | Heavily doped silicon wafer, crystalline silicon solar cell, and preparation method therefor |
| CN114361291B (en) * | 2021-12-24 | 2023-12-01 | 通威太阳能（安徽）有限公司 | Heavily doped silicon wafer, crystalline silicon solar cell and preparation method thereof |
| CN118366908A (en) * | 2024-04-28 | 2024-07-19 | 德沪涂膜设备(苏州)有限公司 | Crystal silicon alignment device and film coating equipment |
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| Publication number | Publication date |
|---|---|
| CN108493267B (en) | 2019-06-07 |
| WO2019205631A1 (en) | 2019-10-31 |
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Effective date of registration: 20200326 Address after: 610299 the six phase of the Industrial Development Zone of the Southwest Airport Economic Development Zone in Shuangliu District, Chengdu, Sichuan. Patentee after: TONGWEI SOLAR (CHENGDU) Co.,Ltd. Address before: 230088 No. 888, Changning Avenue, hi tech Zone, Anhui, Hefei Patentee before: TONGWEI SOLAR ENERGY (HEFEI) Co.,Ltd. |