CN108493239A - Insulated gate bipolar transistor device, manufacturing method thereof and power electronic equipment - Google Patents
Insulated gate bipolar transistor device, manufacturing method thereof and power electronic equipment Download PDFInfo
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- CN108493239A CN108493239A CN201810265240.2A CN201810265240A CN108493239A CN 108493239 A CN108493239 A CN 108493239A CN 201810265240 A CN201810265240 A CN 201810265240A CN 108493239 A CN108493239 A CN 108493239A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to the technical field of power electronics, and discloses an insulated gate bipolar transistor device, a manufacturing method thereof and power electronic equipment, which are used for increasing the area of a grid channel and reducing the resistance of the grid channel, so that the manufacturing difficulty of the insulated gate bipolar transistor device is reduced, and the latch-up effect of the insulated gate bipolar transistor device is improved. The insulated gate bipolar transistor device comprises an emitter structure and a gate structure, wherein: the emitter structure is positioned in a region outside the gate structure; the grid structure comprises a plurality of groups of grids which are arranged in parallel; each group of grid electrodes comprises a plurality of groove grid units arranged at intervals along a first direction and a connecting part used for connecting the groove grid units, the length of each groove grid unit perpendicular to the first direction is larger than the distance between every two adjacent groove grid units, and the connecting part is arranged on one side, close to the emitter structure, of each groove grid unit.
Description
Technical field
The present invention relates to power electronics fields, more particularly to a kind of insulated-gate bipolar transistor device and its system
Make method, power electronic equipment.
Background technology
In field of power electronics, insulated gate bipolar transistor (Insulated Gate Bipolar Transistor,
IGBT) it is most representative power device.Insulated gate bipolar transistor is by bipolar junction transistor (Bipolar
Junction Transistor, BJT) and mos field effect transistor (Metal-Oxide-
Semiconductor Field-Effect Transistor, MOS) composition compound full-control type voltage driven type semiconductor work(
Rate device is highly suitable to be applied for converter system such as alternating current generator, frequency converter, switch electricity that DC voltage is 600V or more
The fields such as source, lighting circuit, Traction Drive.
A kind of insulated-gate bipolar transistor device of existing trench gate structure, structure include mainly disposed in parallel more
A trench gate, emitter contact hole is between adjacent trench gate.The IGBT device of trench gate structure has conduction voltage drop small,
The advantages that device cellular size is small, and integrated level is high.
However, the integrated level due to trench gate structure is high, and insulated-gate bipolar transistor device small volume itself,
Multiple trench gates space between arrangement it is more intensive, to increase the difficulty of manufacture craft.
Invention content
A kind of insulated-gate bipolar transistor device of offer of the embodiment of the present invention and preparation method thereof, power electronic equipment,
To increase the area of grid groove, the resistance of grid groove is reduced, to reduce the making of insulated-gate bipolar transistor device
Difficulty improves the latch-up of insulated-gate bipolar transistor device.
An embodiment of the present invention provides a kind of insulated-gate bipolar transistor devices, including emitter structure and grid knot
Structure, wherein：
The emitter structure is located at the region outside the gate structure；
The gate structure includes multigroup grid disposed in parallel；
Every group of grid includes along the spaced multiple trench gate units of first direction and for connecting the multiple ditch
The interconnecting piece of slot grid unit, the length perpendicular to first direction of the trench gate unit be more than two neighboring trench gate unit it
Between spacing, the interconnecting piece is set to the multiple trench gate unit close to the side of the emitter structure.
In the above-described embodiments, optionally, in every group of grid, the multiple trench gate unit is equidistantly arranged.
In the above-described embodiments, optionally, the trench gate unit of the gate structure is arranged in array.
In any of the above-described embodiment, optionally, the interconnecting piece is polysilicon interconnecting piece.
In any of the above-described embodiment, optionally, the insulated-gate bipolar transistor device specifically includes：N-type is partly led
Body substrate, and be set to the side of the N-type semiconductor substrate and set successively along the direction far from the N-type semiconductor substrate
P-type trap, N-type emitter, the interconnecting piece and the metal layer set, wherein：The metal layer is opposite with N-type emitter position
Part form the emitter structure；The multiple trench gate unit is set to the N-type emitter close to the metal layer
A side surface and be through to the N-type semiconductor substrate along the direction towards the N-type semiconductor substrate.
In the above-described embodiments, optionally, the insulated-gate bipolar transistor device further includes being located at the N-type to emit
First medium layer between pole and the interconnecting piece, and the second medium between the interconnecting piece and the metal layer
Layer.
In the above-described embodiments, optionally, the insulated-gate bipolar transistor device further includes being located at the multiple ditch
Third dielectric layer between slot grid unit and the emitter structure.
Insulated-gate bipolar transistor device provided in an embodiment of the present invention, trench gate unit is mutual indepedent and passes through company
Socket part is electrically connected, and emitter structure is arranged in the region other than gate structure, compared with prior art, using the insulation of the structure design
Grid bipolar transistor device increases the area of grid groove, reduces the resistance of grid groove, to reduce trench gate
The raceway groove pressure drop of unit, and then latch-up can be inhibited.
The embodiment of the present invention additionally provides a kind of power electronic equipment, includes the insulated gate as described in above-mentioned any embodiment
Bipolar transistor device.
Power electronic equipment provided in an embodiment of the present invention, the ditch of trench gate unit in insulated-gate bipolar transistor device
Road pressure drop is smaller, can inhibit latch-up, to improve the quality of power electronic equipment.
The embodiment of the present invention additionally provides a kind of production method of insulated-gate bipolar transistor device, including：
Gate structure is formed, wherein：The gate structure includes multigroup grid disposed in parallel, and every group of grid includes along
The spaced multiple trench gate units in one direction and the interconnecting piece for connecting the multiple trench gate unit, the ditch
The length perpendicular to first direction of slot grid unit is more than the spacing between two neighboring trench gate unit, the interconnecting piece setting
In the multiple trench gate unit close to the side of the emitter structure；
Emitter structure is formed, wherein：The emitter structure is located at the region outside the gate structure.
In the above-described embodiments, optionally, the formation gate structure includes：
Form trench gate unit；
Form first medium layer；
Form interconnecting piece.
Production method provided in an embodiment of the present invention, the trench gate list of gate structure in insulated-gate bipolar transistor device
Member is mutual indepedent and is electrically connected by interconnecting piece, and emitter structure is arranged in the region other than gate structure, compared with prior art,
Using the insulated-gate bipolar transistor device of the structure design, the area of grid groove is increased, grid groove is reduced
Resistance to reduce the raceway groove pressure drop of trench gate unit, and then can inhibit latch-up.
Description of the drawings
Fig. 1 is the schematic diagram of IGBT device in the related technology；
Fig. 2 be in Fig. 1 A-A to schematic cross-section；
Fig. 3 is the schematic diagram of IGBT device of the embodiment of the present invention；
Fig. 4 is B-B direction schematic cross-section in Fig. 3；
Fig. 5 be in Fig. 3 C-C to schematic cross-section；
Fig. 6 is the schematic equivalent circuit of IGBT device of the embodiment of the present invention；
Fig. 7 is the flow diagram of the production method of IGBT device of the embodiment of the present invention.
Reference numeral：
The relevant technologies part：
01- trench gates；
02-N type semiconductor substrates；
03-P type traps；
04-N type source regions；
05- dielectric layers；
06- metal layers；
Part of the present invention：
1- emitter structures；
2- grids；
3-N type semiconductor substrates；
4-P type traps；
5-N type emitters；
6- first medium layers；
7- second dielectric layer；
8- third dielectric layers；
9- metal layers；
21- trench gate units；
22- interconnecting pieces.
Specific implementation mode
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made by the following examples further
It is described in detail.
Reference is made to when ordinal numbers such as " first ", " second " or " third ", unless based on context it is expressed really
The meaning of sequence, it is appreciated that being only to distinguish to be used.
As depicted in figs. 1 and 2, in the related art, the insulated-gate bipolar transistor device of trench gate structure includes N-type
Semiconductor substrate 02, and be set to the side of N-type semiconductor substrate 02 and along the direction far from N-type semiconductor substrate 02 successively
P-type trap 03, N-type source region 04, dielectric layer 05 and the metal layer 06 of setting, wherein：N-type semiconductor substrate 02, p-type trap 03 and N-type
The overall structure of source region 04 has multiple grooves disposed in parallel, and groove, which has, is located at N-type source region 04 far from N-type semiconductor substrate
The opening of 02 1 side surfaces, trench gate 01 are located in groove.
In addition, latch-up mentioned herein is the work electricity for limiting the grid controlled transistor in power semiconductor
The principal element of stream.In power semiconductor, the hole stream for the p-type trap channel flowing being formed under N-type source region increases, meeting
Lead between p-type trap and N-type source region that there are voltage differences.When the voltage difference is higher than certain value (ordinarily being about 0.7V), parasitic NPN
The emitter of transistor and base stage positively biased, the parasitic transistor in grid controlled transistor are started to work, and latch occurs for semiconductor devices.
Latch-up not only makes the grid of semiconductor devices function out of hand, and when serious, the electric current of semiconductor devices can constantly increase,
Temperature so as to cause semiconductor devices gradually rises until burning.
Inventor has found, in the trench gate structure insulated-gate bipolar transistor device of the relevant technologies, multiple trench gates
01 is arranged in parallel, and the arrangement between two neighboring trench gate 01 is more close, so that makes insulated gate bipolar transistor
When easy to produce error, increase make trench gate 01 difficulty；In addition, the groove of grid is relatively narrow to be easy to cause latch-up,
To reduce the quality of insulated-gate bipolar transistor device.
In order to increase the area of grid groove, the resistance of grid groove is reduced, to reduce insulated gate bipolar transistor
The manufacture difficulty of device improves the latch-up of insulated-gate bipolar transistor device, and an embodiment of the present invention provides a kind of exhausted
Edge grid bipolar transistor device and preparation method thereof, power electronic equipment.
As shown in Fig. 3, Fig. 4 and Fig. 5, an embodiment of the present invention provides a kind of insulated-gate bipolar transistor devices, including
Emitting structural 1 and gate structure, wherein：Emitter structure 1 is located at the region outside gate structure；Gate structure includes being arranged in parallel
Multigroup grid 2；Every group of grid 2 includes along the spaced multiple trench gate units of first direction (as shown by the arrows in Figure 3)
21 and the interconnecting piece 22 for connecting aforesaid plurality of trench gate unit 21, trench gate unit 21 perpendicular to first direction
Length (as shown in m in Fig. 3) is more than the spacing (as shown in n in Fig. 3) between two neighboring trench gate unit 21, and interconnecting piece 22 is set
Aforesaid plurality of trench gate unit 21 is placed in close to the side of emitter structure 1.
Insulated-gate bipolar transistor device provided in an embodiment of the present invention, multiple grids 2 are arranged in parallel (such as Fig. 3 institutes
Show), the region between two neighboring grid 2 is provided with emitter structure 1；Each grid 2 includes multiple mutually independent grooves
Grid unit 21, the region between two neighboring trench gate unit 1 are again provided with emitter structure 1.As shown in figure 3, working as m>n
When, 2m+2f>Therefore 2f+2n=2e when the depth of 2 groove of grid is identical, compared to the trench gate structure of the relevant technologies, is adopted
With the structure of grid of the embodiment of the present invention 2, the area of 2 raceway groove of grid can be increased, to reduce the resistance of 2 raceway groove of grid,
And then the raceway groove pressure drop of trench gate unit 21 is reduced, it realizes and inhibits latch-up.
In the above-described embodiments, optionally, in every group of grid 2, aforesaid plurality of trench gate unit 21 is equidistantly arranged.It is excellent
Choosing, as shown in figure 3, the trench gate unit 21 of multiple grids 2 is arranged in array, insulated gate bipolar crystal can be simplified in this way
The manufacture craft of tube device.
In any of the above-described embodiment, optionally, interconnecting piece 22 is polysilicon interconnecting piece.Interconnecting piece 22 uses and trench gate
21 identical material of unit makes, so as to improve the on-state rate between trench gate unit 21.
As shown in figure 5, in any of the above-described embodiment, optionally, insulated-gate bipolar transistor device specifically includes：N
Type semiconductor substrate 3, and be set to the side of N-type semiconductor substrate 3 and along the direction far from N-type semiconductor substrate 3 successively
P-type trap 4, N-type emitter 5, interconnecting piece 22 and the metal layer 9 of setting, wherein：Metal layer 9 is opposite with 5 position of N-type emitter
Part forms emitter structure 1；Aforesaid plurality of trench gate unit 21 is set to a side surface of the N-type emitter 5 close to metal layer 9
And edge is through to N-type semiconductor substrate 3 towards the direction of N-type semiconductor substrate 3.
In the above-described embodiments, optionally, insulated-gate bipolar transistor device further includes being located at N-type emitter 5 and connecting
First medium layer 6 between socket part 22, and the second dielectric layer 7 between interconnecting piece 22 and metal layer 9.It is situated between by first
Interconnecting piece 22 is dielectrically separated from emitter structure 1 and N-type emitter 5 by matter layer 6 and second dielectric layer 7 respectively, so as to subtract
Influence of the small interconnecting piece 22 to emitter structure 1 and N-type emitter 5.
In the above-described embodiments, optionally, insulated-gate bipolar transistor device further includes being located at aforesaid plurality of trench gate
Third dielectric layer 8 between unit 21 and emitter structure 1, three dielectric layers 8 are for being dielectrically separated from gate structure and emitter junction
Structure 1.
In embodiments of the present invention, since the channel area of grid 2 increases so that in IGBT device as shown in FIG. 6
In equivalent circuit, when identical electric current flows through MOSFET, the NPN transistor pressure drop in parallel with MOSFET reduces so that flows through NPN
The electric current of transistor reduces, to realize the latch-up for inhibiting power transistor, simultaneously because insulating in the embodiment of the present invention
The emitter of grid bipolar transistor device is interconnected so that dead resistance reduces in device, further suppresses latch effect
It answers.
The embodiment of the present invention additionally provides a kind of power electronic equipment, includes the insulated gate as described in above-mentioned any embodiment
Bipolar transistor device.
Power electronic equipment provided in an embodiment of the present invention, the ditch of trench gate unit in insulated-gate bipolar transistor device
Road pressure drop is smaller, can inhibit latch-up, to improve the quality of power electronic equipment.
As shown in fig. 7, the embodiment of the present invention additionally provides a kind of production method of insulated-gate bipolar transistor device, packet
It includes：
Step 101 forms gate structure, wherein：Gate structure includes multigroup grid disposed in parallel, and every group of grid includes
Interconnecting piece along the spaced multiple trench gate units of first direction and for connecting aforesaid plurality of trench gate unit, ditch
The length perpendicular to first direction of slot grid unit is more than the spacing between two neighboring trench gate unit, before interconnecting piece is set to
Multiple trench gate units are stated close to the side of emitter structure；
Step 102 forms emitter structure, and emitter structure is located at the region outside gate structure.
Production method provided in an embodiment of the present invention, the trench gate list of gate structure in insulated-gate bipolar transistor device
Member is mutual indepedent and is electrically connected by interconnecting piece, and emitter structure is arranged in the region other than gate structure, compared with prior art,
Using the insulated-gate bipolar transistor device of the structure design, the area of grid groove is increased, grid groove is reduced
Resistance to reduce the raceway groove pressure drop of trench gate unit, and then can inhibit latch-up.
In the above-described embodiments, optionally, step 101 includes：
Step 201 forms trench gate unit；
Step 202 forms first medium layer；
Step 203 forms interconnecting piece.
In this embodiment, insulated-gate bipolar transistor device includes N-type semiconductor substrate, and is set to N-type half
The side of conductor substrate and p-type trap, N-type emitter, interconnecting piece and the gold set gradually along the direction far from N-type semiconductor substrate
Belong to layer, wherein：The metal layer part opposite with N-type emitter position forms emitter structure；Aforesaid plurality of trench gate unit is set
N-type emitter is placed in close to a side surface of metal layer and is through to N-type semiconductor lining along towards the direction of N-type semiconductor substrate
Bottom；First medium layer is between N-type emitter and interconnecting piece.
Preferably, insulated-gate bipolar transistor device further includes the second dielectric layer between socket part and metal layer.
In the above-described embodiments, production method specifically includes：
Step 301 forms trench gate unit；
Step 302 forms N-type emitter；
Step 303 forms first medium layer；
Step 304 forms interconnecting piece；
Step 305 forms second dielectric layer；
Step 306 forms metal layer.
Interconnecting piece insulated with emitter structure and N-type emitter respectively by first medium layer and second dielectric layer every
From so as to reduce influence of the interconnecting piece to emitter and N-type emitter.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
God and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (10)
1. a kind of insulated-gate bipolar transistor device, which is characterized in that including emitter structure and gate structure, wherein：
The emitter structure is located at the region outside the gate structure；
The gate structure includes multigroup grid disposed in parallel；
Every group of grid includes along the spaced multiple trench gate units of first direction and for connecting the multiple trench gate
The length perpendicular to first direction of the interconnecting piece of unit, the trench gate unit is more than between two neighboring trench gate unit
Spacing, the interconnecting piece are set to the multiple trench gate unit close to the side of the emitter structure.
2. insulated-gate bipolar transistor device as described in claim 1, which is characterized in that described more in every group of grid
A trench gate unit is equidistantly arranged.
3. insulated-gate bipolar transistor device as claimed in claim 2, which is characterized in that the trench gate of the gate structure
Unit is arranged in array.
4. insulated-gate bipolar transistor device as described in claim 1, which is characterized in that the interconnecting piece connects for polysilicon
Socket part.
5. such as Claims 1 to 4 any one of them insulated-gate bipolar transistor device, which is characterized in that specifically include：N
Type semiconductor substrate, and be set to the N-type semiconductor substrate side and along far from the N-type semiconductor substrate direction
P-type trap, N-type emitter, the interconnecting piece and the metal layer set gradually, wherein：The metal layer and N-type emitter position
It sets opposite part and forms the emitter structure；The multiple trench gate unit is set to the N-type emitter close to described
One side surface of metal layer is simultaneously through to the N-type semiconductor substrate along the direction towards the N-type semiconductor substrate.
6. insulated-gate bipolar transistor device as claimed in claim 5, which is characterized in that further include being located at the N-type to send out
First medium layer between emitter-base bandgap grading and the interconnecting piece, and the second medium between the interconnecting piece and the metal layer
Layer.
7. insulated-gate bipolar transistor device as claimed in claim 5, which is characterized in that further include being located at the multiple ditch
Third dielectric layer between slot grid unit and the emitter structure.
8. a kind of power electronic equipment, which is characterized in that including such as claim 1~7 any one of them insulated gate bipolar
Transistor device.
9. a kind of production method of insulated-gate bipolar transistor device, which is characterized in that including：
Gate structure is formed, wherein：The gate structure includes multigroup grid disposed in parallel, and every group of grid includes along first party
Interconnecting piece to spaced multiple trench gate units and for connecting the multiple trench gate unit, the trench gate
The length perpendicular to first direction of unit is more than the spacing between two neighboring trench gate unit, and the interconnecting piece is set to institute
Multiple trench gate units are stated close to the side of the emitter structure；
Emitter structure is formed, wherein：The emitter structure is located at the region outside the gate structure.
10. production method as claimed in claim 9, which is characterized in that the formation gate structure includes：
Form trench gate unit；
Form first medium layer；
Form interconnecting piece.
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| CN201810265240.2A CN108493239A (en) | 2018-03-28 | 2018-03-28 | Insulated gate bipolar transistor device, manufacturing method thereof and power electronic equipment |
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| CN201810265240.2A CN108493239A (en) | 2018-03-28 | 2018-03-28 | Insulated gate bipolar transistor device, manufacturing method thereof and power electronic equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020135464A1 (en) * | 2018-12-25 | 2020-07-02 | 无锡华润上华科技有限公司 | Trench-type vertical double diffusion metal oxide semiconductor field-effect transistor |
| CN113421920A (en) * | 2021-06-02 | 2021-09-21 | 广东美的白色家电技术创新中心有限公司 | IGBT device, preparation method thereof and electronic product |
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| CN113421920A (en) * | 2021-06-02 | 2021-09-21 | 广东美的白色家电技术创新中心有限公司 | IGBT device, preparation method thereof and electronic product |
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