CN108480849A - A kind of ablation method of graphene die bonding film - Google Patents
A kind of ablation method of graphene die bonding film Download PDFInfo
- Publication number
- CN108480849A CN108480849A CN201810411152.9A CN201810411152A CN108480849A CN 108480849 A CN108480849 A CN 108480849A CN 201810411152 A CN201810411152 A CN 201810411152A CN 108480849 A CN108480849 A CN 108480849A
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- China
- Prior art keywords
- graphene
- chip
- bonding film
- die bonding
- laser
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/361—Removing material for deburring or mechanical trimming
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Abstract
The invention discloses a kind of ablation methods of graphene die bonding film, include the following steps：S1, the surface that liquid resin is applied to chip form protective film；S2, start temperature elevation system；S3, temperature start motor operating after reaching requirement；S4, laser cutting machine at die bonding film to cutting；Graphene chip after S5, processing grips out with tweezers makes its natural cooling dry；S6, type designations are carried out by He-Ne laser；S7, it chip is removed is transferred to next procedure.The problems such as being impacted invention not only avoids the quality to chip; and the functions such as dust-proof, waterproof can also be played to graphene chip; and its service life greatly prolongs; water-compatible amino resin is added in liquid resin; so that guarantor's light of protective film, guarantor's color effect are improved; durable marks the chip laser after drying, accelerates whole working efficiency to a certain extent.
Description
Technical field
The present invention relates to graphene die bonding film processing technique field more particularly to a kind of engagement of graphene chip are thin
The ablation method of film.
Background technology
Graphene chip, the silicon of a variety of devices such as separated IC, LSI, the LED of predetermined cut-off rule are formed through for surface
The chips such as chip are divided into single device using processing unit (plant)s such as cutting apparatus or laser processing devices, are partitioned into
Device be widely used in the various electronic equipments such as mobile phone, PC.But if to die bonding film radiation pulses
Laser beam will produce fragment in the region centralized heat energy that pulsed laser beam is irradiated, if the fragment splashes and is attached to core
Piece surface, then will produce the quality of chip reduces this problem, and processes later if grouping not being numbered to chip, very
It is easy to cause entanglement, it can not be corresponding with mounted part when leading to chip.
Therefore, we have proposed a kind of ablation methods of graphene die bonding film for solving the above problems.
Invention content
The purpose of the present invention is to solve disadvantages existing in the prior art, and a kind of graphene chip engagement proposed
The ablation method of film.
A kind of ablation method of graphene die bonding film, includes the following steps：
S1, graphene chip is placed on the table, is fixed with intermediate plate, the wavelength tool for pulsed laser beam will be mixed into
The liquid resin of absorbent metal oxide powder is applied to the surface of graphene chip, and the metal oxygen is mixed with to be formed
The protective film of compound powder；
S2, it turns on the power switch, starting fan；" heating " button is rotated, temperature elevation system is started, sets warming temperature；
S3, after temperature reaches requirement, start transmission motor inverter switch, adjust operating frequency, press " transmission work " and press
Button, " cooling crawler belt starts " button, electric motor starting operating；
S4, the power knob for pressing laser cutting machine make to connect through over-focusing high power density laser beam alignment graphene chip
Close and be irradiated cutting at film, make illuminated bonding film rapid ablation, the time of ablation is 60 seconds, while by with light
The coaxial high-speed flow of beam blows down melt substance, cuts open graphene chip to realize；
Graphene chip after S5, processing grips out with tweezers makes its natural cooling dry；
Graphene chip after S6, drying is gripped with tweezers to be placed on the table, and high-energy is generated by He-Ne laser
Continuous laser light beam, the laser action after focusing make surfacing moment melt, or even gasification, lead in graphene chip surface
Control laser is crossed in the path of material surface, to form the type designations of needs；
S7, it is removed after the marking of graphene chip, is transferred to next procedure.
Preferably, containing selected from by Fe in the metal oxide powder2O3The metal oxide formed with CuO, wherein gold
Belong in oxide also with mixed with γ-Al2O3Powder particle, Fe2O3, CuO and γ-Al2O3Ratio is 1:1:1.
Preferably, the liquid resin is water-soluble resin, and water-soluble resin is waterborne film-forming object, can not be mixed into organic molten
Agent or solvent type sealer.
Preferably, in the water-soluble resin mixed with water-compatible amino resin, and water-soluble resin and water-compatible amino resin
Ratio be 2:1, contained solid constituent accounts for 45%, and pH value is between 7.0~8.0.
Preferably, described " heating " button be in turnbutton, rotating clockwise button can heat up, rotate counterclockwise by
Button can cool down, and temperature need to rise to 650 DEG C~680 DEG C in the process.
Preferably, for the transmission motor operating frequency in the Hz of 23.5 Hz~25.5, the wavelength of laser beam is 355 nm.
Preferably, the average grain diameter of the metal oxide powder is less than the hot spot diameter of laser beam, and the metal
The average grain diameter of oxide powder is less than 10 μm.
Preferably, the water evaporation quantity of the dryer is the kg/h of 100 kg/h~150, and the intake of dryer
For 4000 m3The m of/h~60003/h。
The beneficial effects of the invention are as follows：
1, the present invention makes it in graphene chip by the liquid resin in graphene chip surface smearing metal oxide powder
Surface formed layer protecting film, utilize γ-Al2O3Characteristic with strong adsorption capacity and catalytic activity makes it accelerate Fe2O3With
The active reaction of CuO, while utilizing Fe2O3This quasi-metal oxides absorbs the wavelength of laser beam with CuO, and cures
Protective film corrosion resistance and chemical resistance afterwards is excellent, and wearability is good, and electrical insulation properties are excellent, not only avoids arteries and veins
It rushes the fragment generated when laser beam cover to splash and be attached to chip surface, the quality of chip is impacted etc. and is asked
Topic, and the functions such as dust-proof, waterproof can also be played to graphene chip, and its service life greatly prolongs.
2, the present invention in liquid resin by being added water-compatible amino resin so that guarantor's light of protective film, guarantor's color effect add
To improve, durable, while it being made to possess good levelability and good hardness and toughness.
3, the present invention makes various inhomogeneities by carrying out laser beam marking with He-Ne laser to the graphene chip after drying
Other graphene chip respectively possesses respective model, is convenient for same classification, also can successfully to be looked for when subsequent installation chip
The chip to match to model, accelerates whole working efficiency to a certain extent.
Specific implementation mode
The present invention is made further to explain with reference to specific embodiment.
Embodiment one
S1, graphene chip is placed on the table, is fixed with intermediate plate, it will be mixed with γ-Al2O3The Fe of powder2O3With CuO groups
At the liquid resin of metal oxide powder be applied to the surface of graphene chip, metal oxidation is mixed with to be formed with this
The protective film of object powder, wherein Fe2O3, CuO and γ-Al2O3Ratio is 1:1:1；
S2, it turns on the power switch, starting fan；" heating " button is rotated, temperature elevation system is started, sets warming temperature；
S3, after temperature rises to 650 DEG C, start transmission motor inverter switch, adjustings operating frequency be 24.5 Hz, press " biography
Send work " button, " cooling crawler belt start " button, electric motor starting operating；
S4, the power knob for pressing laser cutting machine make to connect through over-focusing high power density laser beam alignment graphene chip
Close and be irradiated cutting at film, make illuminated bonding film rapid ablation, the time of ablation is 60 seconds, while by with light
The coaxial high-speed flow of beam blows down melt substance, cuts open graphene chip to realize；
Graphene chip after S5, processing grips out with tweezers makes its natural cooling dry；
Graphene chip after S6, drying is gripped with tweezers to be placed on the table, and high-energy is generated by He-Ne laser
Continuous laser light beam, the laser action after focusing make surfacing moment melt, or even gasification, lead in graphene chip surface
Control laser is crossed in the path of material surface, to form the type designations of needs；
S7, it is removed after the marking of graphene chip, is transferred to next procedure.
Embodiment two
S1, graphene chip is placed on the table, is fixed with intermediate plate, it will be mixed with γ-Al2O3The Fe of powder2O3With CuO groups
At the liquid resin of metal oxide powder be applied to the surface of graphene chip, metal oxidation is mixed with to be formed with this
The protective film of object powder, wherein Fe2O3, CuO and γ-Al2O3Ratio is 1:1:1；
S2, it turns on the power switch, starting fan；" heating " button is rotated, temperature elevation system is started, sets warming temperature；
S3, after temperature rises to 665 DEG C, start transmission motor inverter switch, adjustings operating frequency be 24.5 Hz, press " biography
Send work " button, " cooling crawler belt start " button, electric motor starting operating；
S4, the power knob for pressing laser cutting machine make to connect through over-focusing high power density laser beam alignment graphene chip
Close and be irradiated cutting at film, make illuminated bonding film rapid ablation, the time of ablation is 60 seconds, while by with light
The coaxial high-speed flow of beam blows down melt substance, cuts open graphene chip to realize；
Graphene chip after S5, processing grips out with tweezers makes its natural cooling dry；
Graphene chip after S6, drying is gripped with tweezers to be placed on the table, and high-energy is generated by He-Ne laser
Continuous laser light beam, the laser action after focusing make surfacing moment melt, or even gasification, lead in graphene chip surface
Control laser is crossed in the path of material surface, to form the type designations of needs；
S7, it is removed after the marking of graphene chip, is transferred to next procedure.
Embodiment three
S1, graphene chip is placed on the table, is fixed with intermediate plate, it will be mixed with γ-Al2O3The Fe of powder2O3With CuO groups
At the liquid resin of metal oxide powder be applied to the surface of graphene chip, metal oxidation is mixed with to be formed with this
The protective film of object powder, wherein Fe2O3, CuO and γ-Al2O3Ratio is 1:1:1；
S2, it turns on the power switch, starting fan；" heating " button is rotated, temperature elevation system is started, sets warming temperature；
S3, after temperature rises to 680 DEG C, start transmission motor inverter switch, adjustings operating frequency be 24.5 Hz, press " biography
Send work " button, " cooling crawler belt start " button, electric motor starting operating；
S4, the power knob for pressing laser cutting machine make to connect through over-focusing high power density laser beam alignment graphene chip
Close and be irradiated cutting at film, make illuminated bonding film rapid ablation, the time of ablation is 60 seconds, while by with light
The coaxial high-speed flow of beam blows down melt substance, cuts open graphene chip to realize；
Graphene chip after S5, processing grips out with tweezers makes its natural cooling dry；
Graphene chip after S6, drying is gripped with tweezers to be placed on the table, and high-energy is generated by He-Ne laser
Continuous laser light beam, the laser action after focusing make surfacing moment melt, or even gasification, lead in graphene chip surface
Control laser is crossed in the path of material surface, to form the type designations of needs；
S7, it is removed after the marking of graphene chip, is transferred to next procedure.
The extinction coefficient of metal oxide is shown in following table（Attenuation coefficient）K and fusing point.In addition, extinction coefficient k and suction
Relationship with the π k/ of α=4 λ between receipts factor alpha.Herein, λ is the wavelength of used light.
| Extinction coefficient k（@355nm） | Fusing point（℃） | |
| Fe2O3 | 1< | 1565 |
| CuO | 1.5 | 1026 |
By embodiment one, the membrane notches of the graphene chip combination film after three ablation of embodiment two and embodiment
Flatness, wafer damage degree, inspection result are as shown in the table：
| Temperature（℃） | Membrane notches flatness | Wafer damage degree | |
| Embodiment one | 650 | It is smooth to have wrinkle | Damaged condition is small |
| Embodiment two | 665 | It is smooth wrinkle-free | Substantially without damage |
| Embodiment three | 680 | It is smooth to have wrinkle | Damaged condition is small |
Shown in upper table, through the invention in embodiment one, embodiment two with embodiment three-phase comparatively, graphene chip connects
Film to be closed to be influenced by temperature during ablation, the film corrugation too high or too low for temperature that can all make cutting mouth is shunk,
In conclusion embodiment two set 665 DEG C of temperature at be processed after chip overall appearance and quality it is best.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Any one skilled in the art in the technical scope disclosed by the present invention, according to the technique and scheme of the present invention and its
Inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (8)
1. a kind of ablation method of graphene die bonding film, which is characterized in that include the following steps：
S1, graphene chip is placed on the table, is fixed with intermediate plate, the wavelength tool for pulsed laser beam will be mixed into
The liquid resin of absorbent metal oxide powder is applied to the surface of graphene chip, and the metal oxygen is mixed with to be formed
The protective film of compound powder；
S2, it turns on the power switch, starting fan；" heating " button is rotated, temperature elevation system is started, sets warming temperature；
S3, after temperature reaches requirement, start transmission motor inverter switch, adjust operating frequency, press " transmission work " and press
Button, " cooling crawler belt starts " button, electric motor starting operating；
S4, the power knob for pressing laser cutting machine make to connect through over-focusing high power density laser beam alignment graphene chip
Close and be irradiated cutting at film, make illuminated bonding film rapid ablation, the time of ablation is 60 seconds, while by with light
The coaxial high-speed flow of beam blows down melt substance, cuts open graphene chip to realize；
Graphene chip after S5, processing grips out with tweezers makes its natural cooling dry；
Graphene chip after S6, drying is gripped with tweezers to be placed on the table, and high-energy is generated by He-Ne laser
Continuous laser light beam, the laser action after focusing make surfacing moment melt, or even gasification, lead in graphene chip surface
Control laser is crossed in the path of material surface, to form the type designations of needs；
S7, it is removed after the marking of graphene chip, is transferred to next procedure.
2. a kind of ablation method of graphene die bonding film according to claim 1, which is characterized in that described
Containing selected from by Fe in metal oxide powder2O3With CuO composition metal oxide, wherein in metal oxide also with mixed with
γ-Al2O3Powder particle, Fe2O3, CuO and γ-Al2O3Ratio is 1:1:1.
3. a kind of ablation method of graphene die bonding film according to claim 1, which is characterized in that described
Liquid resin is water-soluble resin, and water-soluble resin is waterborne film-forming object, can not be mixed into organic solvent or solvent type sealer.
4. a kind of ablation method of graphene die bonding film according to claim 1, which is characterized in that it is special
Sign is that mixed with water-compatible amino resin in the water-soluble resin, and the ratio of water-soluble resin and water-compatible amino resin is
2:1, contained solid constituent accounts for 45%, and pH value is between 7.0~8.0.
5. a kind of ablation method of graphene die bonding film according to claim 1, which is characterized in that described
" heating " button is in turnbutton, and rotating clockwise button can heat up, and rotating counterclockwise button can cool down, and herein
Temperature need to rise to 650 DEG C~680 DEG C in the process.
6. a kind of ablation method of graphene die bonding film according to claim 1, which is characterized in that described
Motor operating frequency is transmitted in the Hz of 23.5 Hz~25.5, the wavelength of pulsed laser beam is 355 nm.
7. a kind of ablation method of graphene die bonding film according to claim 1, the metal oxide
The average grain diameter of powder is less than the hot spot diameter of laser beam, and the average grain diameter of the metal oxide powder is less than 10 μm.
8. a kind of ablation method of graphene die bonding film according to claim 1, which is characterized in that described
The water evaporation quantity of dryer is the kg/h of 100 kg/h~150, and the intake of dryer is 4000 m3The m of/h~60003/
h。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810411152.9A CN108480849A (en) | 2018-05-02 | 2018-05-02 | A kind of ablation method of graphene die bonding film |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810411152.9A CN108480849A (en) | 2018-05-02 | 2018-05-02 | A kind of ablation method of graphene die bonding film |
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|---|---|---|---|---|
| CN101740419A (en) * | 2008-11-25 | 2010-06-16 | 株式会社迪思科 | Protective film forming method and apparatus |
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| CN102837369A (en) * | 2012-09-18 | 2012-12-26 | 广东工业大学 | Process method for green laser scribing sapphire |
| CN103077902A (en) * | 2011-10-06 | 2013-05-01 | 株式会社迪思科 | Ablation processing method of die attach film |
| CN105336567A (en) * | 2014-07-03 | 2016-02-17 | 中芯国际集成电路制造(上海)有限公司 | Laser marking method for SOI wafer |
| JP2016055243A (en) * | 2014-09-09 | 2016-04-21 | 株式会社ディスコ | Coating method of protective coating |
| TW201724225A (en) * | 2015-07-29 | 2017-07-01 | Disco Corp | Laser processing method |
| CN107123588A (en) * | 2017-06-26 | 2017-09-01 | 镓特半导体科技（上海）有限公司 | A kind of gallium nitride wafer piece border processing method |
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|---|---|---|---|---|
| CN101740419A (en) * | 2008-11-25 | 2010-06-16 | 株式会社迪思科 | Protective film forming method and apparatus |
| CN101789391A (en) * | 2009-01-23 | 2010-07-28 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacturing method thereof |
| CN103077902A (en) * | 2011-10-06 | 2013-05-01 | 株式会社迪思科 | Ablation processing method of die attach film |
| CN102837369A (en) * | 2012-09-18 | 2012-12-26 | 广东工业大学 | Process method for green laser scribing sapphire |
| CN105336567A (en) * | 2014-07-03 | 2016-02-17 | 中芯国际集成电路制造(上海)有限公司 | Laser marking method for SOI wafer |
| JP2016055243A (en) * | 2014-09-09 | 2016-04-21 | 株式会社ディスコ | Coating method of protective coating |
| TW201724225A (en) * | 2015-07-29 | 2017-07-01 | Disco Corp | Laser processing method |
| CN107123588A (en) * | 2017-06-26 | 2017-09-01 | 镓特半导体科技（上海）有限公司 | A kind of gallium nitride wafer piece border processing method |
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Application publication date: 20180904 |