TW476108B - Target for providing film on semiconductor substrate using laser emission and method of making the same - Google Patents

Abstract

This invention provides a target, which includes: a transparent substrate having a first surface and a second surface with opposite disposition; a gas generating film placed on the first surface and a target film placed on the gas generating film. The target is characterized by forming a film on a semiconductor substrate disposed oppositely to the target film using laser irradiation from the second surface. This invention also provides a method to form a film on a semiconductor substrate, which includes: a preparation step for preparing transparent substrate with oppositely disposed first surface and second surface; a gas generating film formation step, forming gas generating film on the above-mentioned first surface; a target film formation step for forming target film on the gas generating film; and a semiconductor substrate disposition step for disposing semiconductor substrate oppositely to the target film. The method is characterized by performing laser irradiation on the target film and describing the target film on the semiconductor substrate to form a film.

Description

476 鄕 5. Description of the invention (1) Background of the invention 1 · Field of the invention The invention relates to the use of the εε material of rapier film and the use of > + forming a metal or insulation on a + V peptide substrate 2. The prior art ... Method for forming a thin film. Square ;:-General: The metal film used on the semiconductor substrate placed on t Γ is deposited after evaporation, and the second pile is piled up; the film is a dry material, which is irradiated with laser light and deposited on the + conductor substrate. Dry: Shooting II t: Model profile ® of laser evaporation device. So here :! The processing method is as follows: the oblique direction of the material substrate 2 is used to form a film-receiving target material in il steps to generate friction, and finally the base and the night drop shape arranged on the target material are formed. The thin film formed on the substrate 1 by this method shows the result that the flatness is not good ... b, because the substrate is dry: ^: long distance, etc., in principle, it is not possible to select selectively. A desired pattern is formed on the substrate. FIG. 19 shows an example of the method that has been protected: two =: method, which uses a quartz substrate 3 that easily transmits laser light and has a gland ": 寺 寺 i 属" section 4. The metal ΓΓΛ is arranged on the quartz substrate 3 The semiconductor substrate 1 is then irradiated with light from the quartz substrate 3. First, the metal film is drawn on the semiconductor in front of the dry film (metal film 4). 0: Using the method of FIG. 19, although a thin film dimension can be selectively formed. A droplet-shaped excess film will also form on the Feng ν plate 1, which is not a problem. In addition, 'this-method, such as the use of dioxin, does not absorb lasers as a target. When the material film is thin 4, it will not be able to pass through the description of the invention. (2) The laser 4 causes wear on the film 4. This evil method forms a thin film on a substrate. The purpose of the present invention is to provide an overview of forming a thin film on a substrate. Palladium, its system Using lasers on semiconductors Another object of the present invention is to improve the formation of selective self-conductivity on conductor substrates: materials, which are made of thin films using lasers. Tumbe, semiconductor materials or insulating materials, which use lasers on Lasers are used in semiconductors. Lithography is not used in semiconductors. The purpose of the present invention is to provide a thin film or thick film on a target substrate. The object of the present invention is to provide a method for forming a thin film on a substrate. / An object of the present invention is to provide a method for forming a thin film on a semiconductor substrate ::: Month: The characteristics are: the surface of the laser device is transparent on the transparent substrate; the structure of the dry film contains the gas-generating substance and the amount of dry material. The laser can be used in semiconductor substrates in a variety of structures. In the case of the film =, a good pattern is formed. In addition, after the surface is irradiated with laser light on the G pendulum substrate, only the irradiated portion is green =: is selectively drawn on the semiconductor substrate. Therefore, it is the same as the pre-main V body substrate. The desired position can be drawn on a semiconductor substrate without the lithography technique / cool sample formation. The method of the present invention is suitable for forming an electrode when a metal film is used. Page 6 476108 V. Description of the invention (3) Pad, but if the target film formed by laser irradiation is connected to a semiconductor substrate, wiring can also be formed. In addition, the semiconductor insulation film is formed more There are quite a lot of cases. However, as described above, if a target film is used for formation, it is easy to form a large-area insulating film. The present invention is also suitable for this case. If the laser beam radius is increased, it can be Enlarge the dry film. If you add a mask between the semiconductor substrate and the laser, you can form an arbitrary dry film. The above target contains a gas-generating substance that is transparent to the laser device. Generated by laser irradiation formed on a substrate. The target is composed of a Ding Li ^ film. The gas generating film is generated by the ★ irradiation formed on the transparent substrate; the target film is formed by the The laser irradiation is formed on the gas generating film I. The formed film can prevent the formed film from being completely formed on the + conductor substrate. Facing the f-radiation device on the & bright substrate is a kind of conductive particles. The conductive particles have a gas-generating substance generated by laser irradiation, and is used as a solvent, such as on a target substrate. The use of conductive glue, which is easy to generate gas, is used to form thin films; '3 丨: Compared with the laser photo method, the Xiao method can form more delicate :: words' and the pores caused by the conventional printing method (VO⑷ The quality is not equal to 'and can reduce the target formed by printing the transparent substrate' from the following: the seed film is structured on the generated gas generating film, and the conductive god :; Irradiation to form a thicker guide. In this way, the aforementioned knee formed on a transparent substrate can be used. The laser is mounted as: the above-mentioned gas-generating film, which is formed by the surface :: ： wide seed film Field shooting device in transparent substrate

4mm 5. Description of the invention (4) The r / b photo film formed by the laser irradiation formed is a human film, which is formed on the above-mentioned production film. ] == (two, on the thick lining, on the same day where the metal bumps are set, can be used in: position. In addition, the present invention is also applicable to the following method: bismuth r + h · λ ^ The copper film formed on the substrate: etching is the desired pattern. After searching, it can be used for wiring and electrodes. In addition, the film material is better than aluminum, except for copper. Silicon, etc. In terms of etching gas, any gas can be used as long as the above materials can be etched. Brief description of the drawings FIG. 1 is a cross-sectional view of a target according to an embodiment of the present invention. FIG. 2 is an implementation of the present invention. Fig. 3 is a schematic cross-sectional view of a laser irradiation device used in an example of the present invention. Fig. 3 is a schematic cross-sectional view of a laser irradiation device used in an embodiment of the present invention. Sectional view. ^ FIG. 5 is a sectional view of a semiconductor substrate including a pad according to this embodiment. FIGS. 6A and 6B are sectional views of a manufacturing process of forming a thin film according to the present invention when compared with a conventional method. A and Figure 7B are compared with traditional methods Sectional view of the present invention formed a film made of manufacturing steps., Clothes FIG. 8 A and FIG. 8 B when compared to the conventional method, the present invention is manufactured by forming a thin film of

Page 8 476108 Amendment V. Sectional drawing of the invention process. FIG. 9 is a cross-sectional view of a target material according to an embodiment of the present invention. FIG. 10A to FIG. 10D are cross-sectional views of a film formation process in a conventional embodiment. 11 is a cross-sectional view of a semiconductor manufacturing process according to an embodiment of the present invention. Fig. 12 is a cross-sectional view of a target according to an embodiment of the present invention. Fig. 13 is a cross-sectional view of a semiconductor manufacturing process according to an embodiment of the present invention. Fig. 14 is a sectional view including a metal bump according to this embodiment. Figs. 15A and 15B are cross-sectional views of a half-block forming process according to an embodiment of the present invention. 16A and 16B are cross-sectional views of a half-block forming process in the embodiment of the present invention. FIG. 17 is a semiconductor substrate view in an embodiment of the present invention. Fig. 18 is a view of a vapor deposition device using a conventional laser. Figs. 19A and 19B are cross-sectional views of this process when a semiconductive metal film is drawn using a conventional laser. 20A and 20B are cross-sectional views of a process of forming a thin film of a target on a substrate in an embodiment of the present invention. 2A and 2B are cross-sectional views of a process of forming a copper bump on a substrate by a target in an embodiment of the present invention. 2 2A and 2 2B are schematic cross-sectional views of a target substrate on a substrate of a conductor substrate on a substrate of a dry substrate formed of a thin film formed on a substrate by a thin film formed on a semiconductor substrate by a substrate on a semiconductor substrate; And semi-conductors and semi-conductors and semi-conductors. Upper metal convex Upper metal convex Flattening of the line layer Selecting the volume laser light The volume laser light The volume laser light

O: \ 66 \ 66403.ptc Page 9 4761 ° L correction (Supplement of sharp 89118952_h year, month and day correction gas __, description of the invention (i) copper pad was formed on it, and the cross section when carbon particles were attached to it Figures 2 3A and 2 3B show examples of the present invention: a target material including a conductive paste buried in a mask pattern; and a cross-sectional view of a conductive layer formed on a substrate with semiconductor laser light. Figures 2 A to 4 2 4D is a cross-sectional view of a manufacturing process of a dry material using a transparent substrate with a recess in an embodiment of the present invention. FIG. 25 is a schematic diagram of a manufacturing apparatus used in the embodiment of the present invention. FIG. 26 is an embodiment of the present invention A cross-sectional view of the gas generating agent supply device and its nozzle used in Figs. 27A and 27B are cross-sectional views of a selective film removal process using the manufacturing device of Figs. 25 and 26. Figs. 28A and 28B are parts using Figs. Sectional view of the selective film removal process of a manufacturing device. Preferred Specific Embodiments The invention is described below with reference to the drawings. The invention includes a multilayer structure for forming a thin film that faces a laser device against a target Implement laser irradiation on transparent The gas-generating film (hereinafter referred to as a gas-generating film) formed on the board may include a structure in which a gas-generating substance and a film-forming particle are mixed by laser irradiation, or a metal bump is bonded to the gas-generating film. The present invention is characterized in that a thin film pattern can be formed on a semiconductor substrate without splashing a target film or bumps. First, a first embodiment will be described with reference to FIGS. 1 to 8. The target of the embodiment. Laser irradiation is performed on a quartz substrate 10 that can transmit laser light to form a gas generating film 11. This gas generates

O: \ 66 \ 66403.ptc Page 10 476108 V. Description of the invention (7) Membrane 11 (such as nitrocellulose) can be used for membrane 11. A target film 12 is formed on the volume generating film 11. With regard to the target film 12, lice, such as gold, aluminum, copper, silicon, and silicon oxide (dioxide, followed by 'refer to FIG. 2 and FIG. 3, are used to summarize the laser irradiation installation. For example, the structure of the device allows the observation light to be incident on the semiconductor substrate under the condition of torpedo radiation: radiation 3 coaxial). By using this viewing field to observe the calibration mark on the semiconductor substrate 1, a calibration operation can be performed between the half-two irradiation axes (Fig. 2). After the calibration is completed, the core sigma substrate driving device 16 places the target substrate 3 on the semiconductor substrate 1 that has already been mounted. As shown in the figure, the dry material substrate 13 includes a central substrate 10 that can transmit laser light; a gas generating film η, which is a system; and a target film 12. The target substrate 13 is installed so that laser irradiation can be performed from the direction of the central substrate 10, and the laser irradiation can be performed through the laser irradiation. 2 The thin film is formed on the substrate 10. ccd camera can detect °, ya correct its position through the monitor. The ㈣substrate driving device = a dry jig 15 used to fix the ㈣substrate 13 and use the dry clamp to show 15 „The target substrate 13 can be fixed on the semiconductor substrate 1 ± (Figure 3): m, 2 ′, and placed on the semiconductor The substrate 1 is irradiated with laser light on the lunar surface of the stone central substrate 10 (Fig. 4A), and the combination is 1: 1 :: selective dry film (Fig. 4B). Scanning, and repeated laser irradiation, then

Page 11 476108 V. Description of the invention (8) " '~ " A target film pattern is formed on the substrate 1 (Fig. 4C). Figure 5 is a plan view of a semiconductor substrate. According to the method shown in FIG. 4, a general electrode 121 of aluminum or the like is formed on the semiconductor substrate 1 in a certain pattern. In this embodiment, 'nitrocellulose used as a gas generating film, T f is 30. Light of a wavelength below 0 nm is also a known fact. Therefore, in the present embodiment, the laser light with a skin length of 30 nm or less is a KrF Inkima laser (transliteration) with a wavelength of 2M nm or a fourth high-profile wave. Ser 1: In the itching example, ☆ uses nitrocellulose for the gas-generating membrane, and laser irradiation is used, which is irradiated by i and irritated by Tian Xingde. The wavelength is 30 °. Shoot light. However, Lu Xuntian's light emission is applicable to the present invention as long as it is a thin film capable of absorbing two light rays i of this wavelength to generate a gas. This point is to explain the film formation effect of this embodiment to use the gas generation film f FIG. 6 When the target film is formed on the substrate in Figures 7 and 8, the ratio of the milk-producing film is directly formed on the quartz substrate. Figure 6 shows the formation of golden fruit on the quartz substrate. Practically speaking, the case of a gold, aluminum pancreas or semiconductor target film 17 is also used in the case of an unconventional gas generating film. Figure copper, Shi Xi and so on. Figure 6 A shows the results. As shown in FIG. 6A, the use of a gas-generating film 1 and the formation of a target film on the substrate 1 or the formation of a droplet-free gas-generating film are semiconducting, as shown in FIG. 6B. If used, the characteristics are quite poor. Relatively flat. Media U has no spatter,

476108 V. Description of the invention (9) Fig. 7 shows the result of using a silicon 〃 film 18 that does not absorb laser light and formed on a quartz substrate 10 :: waist) as a dry body to produce a film. The figure assumes that ^ is the non-use of gas. As shown in the figure, when m = Kongzu produces results. _ ^ ^ ^ If the lactation of the breast is not the case, the emperor will pass through the quartz substrate 10 and dry it, and the direct exposure will directly damage the conductor substrate. Relative to & Shanshi, on the cold-collected substrate, the half-seven π 丄, corpse & pair 'as in the target gland of silicon dioxide 1 S Μ D: If the gas-generating film 11 is formed, the gas-generating film " can be absorbed = Down so that laser light cannot reach the semiconductor substrate! In this way, the laser irradiation damage on the board 1 can be prevented. Furthermore, the base of the limbs produces a membrane 1 1, Min # A m and a gas that shoots the moon in summer. The target film 18 is formed on the semiconductor substrate 丨 by emulsification. FIG. 8 shows a material formed on a quartz plate 10 using a nitride material (διΛ). FIG. 8A shows the result when the gas generating film is not used, and FIG. 8B shows the result when the gas generating film is used. As shown in FIG. 8A, when the target film 9 is subjected to laser irradiation without using a gas generating film, SiA appears on the semiconductor substrate 1 in a particulate form and spatters are generated. The possible reason for such a spatter phenomenon is that even if SiA absorbs laser light, the thermal diffusion length of Si N is significantly shorter than that of metal films and semiconductor films. Therefore, the temperature of the local area of the 4 laser irradiation surface will be increased by 3, as a result. As a result, s "& membrane is greatly deformed inside. On the other hand, when gas is used to generate membrane n, the phenomenon of S; & membrane flying will not occur, and a leather film is formed. As mentioned above In this embodiment, on the substrate that easily penetrates the laser light, if the f-shaped gas-generating film that absorbs the laser light is formed, and the target film is formed on the top, the laser transmission rate of the target film is not affected. Optical characteristics such as absorption

Μ Page 13 476108 V. Description of the invention (10), or the influence of different materials such as metals, semiconductors, insulators, etc., and finally a good pattern is formed on the semiconductor substrate. ~ a Next, a second embodiment will be described with reference to FIGS. 9 to 13 ′. 9 and 12 are cross-sectional views of a target substrate, FIG. 10 is a process cross-sectional view illustrating a conventional process, and FIGS. 11 and 13 are process cross-sectional views of this embodiment. In the first embodiment, method 2 is described in which a laser device is irradiated on a transparent substrate to form a gas-generating film and a target film is formed on the transparent substrate. In this embodiment, I will be described as follows: A method for performing laser irradiation on a transparent J-reverse device and using a target material to form a target film in the face of an f-emitting device; and a leather material is coated with a conductive adhesive containing a vaporized solution. FIG. 9 is a cross-section of the target base ash 13 used in this embodiment. It is a synthetic quartz base which is easy to be irradiated by laser light. The conductivity is: ^ upper: ^ dagger layer ^ Pr used in this embodiment. Dvl 3 is a mixture of resins such as temple metal particles, epoxy resin and glyco1 mono methyethyl. Therefore, it is the reason of 12 °° c ... it is irradiated with a low-energy laser, too. ”:: r00 CT 20 0 ° c, if the low-energy laser is used, the figure q- can be applied to the present invention. . The strength of the J material H substrate 13 is placed in the laser photo shown in Fig. 2 and Fig. 3. In the same way as above, Yake can irradiate the 3 between the shot wheels from the direction of the quartz substrate 10 in the same manner as in Example 3: When the semiconductor substrate 1 and the laser are irradiated, the target substrate 13 is inserted for dry = 1 其 'q. Upper substrate 13 of semiconductor substrate 1 and semiconductor substrate " laser simultaneously with the implementation of laser drawing 5. Description of the invention (u)

Irradiation, 4 I pattern (two semiconductor substrates 1 are obtained with a dry film type made of conductive adhesive: pattern formation, using the so-called printing method. Ten pairs of methods, the conventional method and the present embodiment of the thin film The formed comparison method is a traditional printing method. Figure 11 is a pattern of forming a conductive paste on the method η? According to the actual brushing method. In the traditional printing method, Baixian has arranged gold ❿ 21 (on a semiconductor substrate). (Fig. 10A). Next, on the second half of the second half of the mask 21, a conductive adhesive 20 is applied to form an electric conductive film. The metal mask 21 is removed by the adhesive to form a conductive film on the semiconductor substrate 1 // m, and the minimum size of the pattern using the deposit: #method is less than 1 0 ^ and there will be a small space inside the conductive adhesive :: = U, according to this embodiment: two small size, about 3 Α π, compared with the printing method, π: 1 bar film with micropattern can be described. In addition, the ^ electricity / interval of the internal details seen in the printing method can also obtain a considerable degree The improvement. Within ^ Then 'refer to Figure 12 and Figure 13 to the next day 4 丨 丨 "to form Method X of the thicker thin film conductive adhesive of Fig. 9. Low energy ^ laser irradiation =: = Mouth: Xie Shelai: born on a semiconductor substrate! And laser substrate 1 13. The substrate 13 is placed on the semiconductor substrate "... M For 476108 V. Description of the invention (12) __ While conducting the conductor substrate 1 and performing lightning ▲, the target image formed by the conductive glue on the plate 1 can be obtained in detail. Water Figure 13). Compared with the case of using a gas generating film, it can be h-shaped, and not shown in FIG. 11. Therefore, when it is desired to obtain a conductive adhesive with a thicker film to adopt the pattern of the gas generating film and the conductive adhesive as shown in FIG. 12, then, referring to FIG. 14 to FIG. 16, for the J ff board More ideal. 14 is a cross-sectional view of a target substrate. The examples are explained. Ordered sectional view. In this embodiment, 16 is a target substrate for forming bumps, and the solder or a metal such as gold ^, or a metal bumped gas such as gold is formed on a gas generating film. Lambda plate 丨 3 spoons, quartz substrate 10 that is radiant due to laser irradiation; due to laser exposure = ^ 3: can pass through the laser; and metal protrusions such as solder or gold; 2:14 Figure 2, Figure 2 Laser irradiation device 2 shown in 3 :: base = radiated on the substrate 10 in the direction of 0 + radiation on the other 15; after the calibration between the axis of the irradiated stone: a = = semiconductor substrate 1 and radiation By irradiation, the semiconductor :: wide Λ board 1 "can be used to implement the connection of all metal bumps 7nf metal bumps 30 used in this example." Metal bumps 3 "solder bumps or composite conductor substrates There is Shao (A1) _ w on the half ^ 1μ I ,, I ^ ^ ^ ^ 430 ^ towards the semiconductor substrate 丨, so that the metal bumps 303 are applied. The pressure above the pressure: m The metal bumps are affected by its heat. At this time, the temperature of the metal bumps 3. 476108 V. Description of the invention (13) Hundreds C. Due to the aforementioned pressure and heat, the metal bumps 3 〇 The aluminum pad 31 on the conductor substrate 1 is connected (FIG. 15). Furthermore, in a stronger case, the laser light can be continued to be directly connected to the lining. The bonding degree can be strengthened (Fig. 30) (see Fig. 30). The material is formed on the pad 31 in the first embodiment, and the integrated circuit and the pad electrode are formed by using the present invention. Now when: a bump is formed on the pad electrode in the conductor substrate. In addition, as shown in the figure: Through: example? The method can be shaped on the semiconductor substrate # No, use the body substrate of the present invention to scan and repeat the implementation Multi-material ^ plate and Fengsi =; 1: gradually formed, and finally formed the wiring 45 ... When the street shooting and shooting are implemented, if the φ bay domain 41, 42, 43 is changed appropriately. And the field beam diameter, then The second area can be easily formed with reference to FIG. 20 and even FIG. 24. The fourth embodiment will be described. In this man and the known example, an inexpensive light source can be used. The laser semiconductor used is Z = The laser emits as a laser with a fine wavelength of 785 nm, and its average output is one watt. In this case, if the laser is half connected to the laser; ^ ^ ΟΝ / OFF action, the laser can be made === power supply进 4 丁。 Any pulse to find the degree of pulse vibration ¥ 17 476108 V. Description of the invention (14) However, as mentioned above When nitrocellulose is used as a gas generating film, nitrocellulose cannot absorb light with a wavelength of 300 nm or more. Therefore, even if the laser light of the above-mentioned laser semiconductor is used to irradiate the nitrocellulose gas, it is impossible to make the gas The gas is generated when the gas is generated by the film. Τ Therefore, in order to absorb nitrocellulose and generate gas, a pigment that absorbs infrared light in visible light is added to the stone fiber cellulose gas generation film. About 2 wt% The wavelength of the emitted light is 100 × 1〇 ()

At this time, irradiation of 500 sec #c with laser light of two watts of amine-M, etc., can vaporize the gas-generating film of Gongli pigment, and trace the target film to the semiconductor substrate. That is, when infrared laser light is used from visible light, adding a heat absorber that can absorb light of that wavelength to the gas ^ $ can cause gas generation and gasification. -In the case of DUV using Nd: YAG fourth high-frequency wave or KrF Exima laser (transliteration) and other basic light, an expensive synthetic quartz substrate must be used as the transparent phase, such as visible light or infrared light. In the case of laser, the production point 1 ^ The advantage of using a cheap glass substrate or a resin substrate as a transparent substrate. Here, “transparent” refers to: due to the effect of light passing through the transparent substrate, Φ 2% starts to produce gas. In addition, the transparent substrate is not damaged by each light irradiated by the irradiation. # 、、 The pigment added to the gas-generating film, which is not radiant, does not vaporize due to the laser irradiation problem, and thus becomes a dust attached to the substrate. This is a problem as shown in Figure 20 and Figure 23. Shown as a target for solving the above problems. As shown in _ 2 Π _ ’On a glass or resin substrate that transmits laser light, such as

Page 18 V. Description of the invention (15) As in the above embodiment, a gas generating film is attached, and a target film 12 is formed on the film. In addition, as in Benjah, at least one of the gas generating substrate 10 or the substrate i will be "=", the above-mentioned vitreous body generating film 11 includes: confirmed cellulose, mixed with field, the above-mentioned air fiber, carbon mesh (carbon mesh) mesh: Chemical carbon is subjected to semiconductor laser-like photothermal / condensation as described above for the glass substrate 10. JT absorbs laser light, and the carbon of the surrounding nitrocellulose film, c carbon, vaporizes the nitrocellulose. As a result of this gasification, a part 51 of the target film 12 will be drawn 2 in a predetermined pattern, so the above-mentioned substrate 1 is arranged in the opposite direction. In the end, the above nitrocellulose and the above-mentioned Geba film 12 are entangled with each other, so they are attached to ′, the content of 10%, and the generation of unwanted dust is suppressed. · 'Escape glass substrate' In addition, Cu (copper) is used as the material for the low-resistance wiring layer and block. However, alas, Cu is produced after heat treatment in air, and the impedance is greatly increased, which is a well-known fact. That is to say, it is necessary to form an emulsification phenomenon around the Cu, which can be caused when the heat treatment is performed with C :: 5 for the insulating film of the protective film or the like. ^ & is a target that has the function of suppressing oxidation while forming a wiring layer. That is, carbon fine particles 61 are added to nitrocellulose. For the dry film 12, a plastic substrate is used for the side where Cu particles are mixed. For laser irradiation, a laser semiconductor with a wavelength of 785 nm was used. As shown in the figure, if the transparent substrate 10 is radiated with laser light, the carbon particles 61 absorb the laser light and vaporize the surrounding cellulose; the Cu glue is drawn as Cu bumps 62 ^ -V. Description of the invention (16) To the oppositely arranged substrate! on. + Will be attached to the above-mentioned colloidal Gu bump 62, in order to make the above-mentioned colloidal Cu bump 62 hard:, :: == ". Then proceed. In this case, due to the heat treatment in the air at f, carbon particles Cu bumps are attached to the surface of the surface of the 'oxygen U = block' after heat treatment. This shows that low resistance can be obtained after a flat attack. The carbon particles attached to the surface have the ability to inhibit oxidation. On the other hand, the fourth high-frequency wave of nitrated YAG is laser, ', and carbon particles are added to the ice. Cu film; Fe μ μ, +, # L, if sub-substrate heat treatment, Bu, +, r 7 7 4 rises on the upper substrate 1. Then the above-mentioned Cu glue produces an effect and makes the resistance significantly as described above. The gas-generating film is composed of 埶 # 俨 + which is made and combined, and is composed of heat and heat that is used as a surface additive. It can be used to add other substances to the pattern. In addition to the surface, In addition to carbon particles, if F material | "^^^" eu particles Cr U particles are added to the above-mentioned nitration 'meaning, 隹 in medium' also has the effect of inhibiting oxidation. = 22 is a method of using the degraded cellulose film 11 formed on the transparent substrate 1Q and adding carbon fine particles 6} to adhere the carbon fine particles 61 to the Cu pad 72, and the Cu pad 72 is exposed. On the surface of the semiconductor wafer 71. If laser irradiation is performed from the transparent substrate 10, the nitrocellulose around the carbon particles 6 1 is vaporized, and the carbon particles 6 i are sigma onto the Cu pad 72 by the gasification. The carbon fine particles 61 are adhered to the cu pad 7 2. As described above, the Cu pad 7 2 with the carbon fine particles 61 has improved oxidation resistance against heat treatment, and is therefore suitable for heat treatment operations.

Page 20

At present, in order to form the A1 gold on the oxidation-resistant pad 72 as described above, which results in an increased number of steps, it is necessary to suppress the metal film such as the A1 metal film having strong Cu pad 7 2 properties. The oxidation 'and the Cu lining. However, for the Cu lithography process, as described above, as described above, laser irradiation is performed on the nitrocellulose film containing carbon particles, so that the carbon particles can adhere to the Cu liner and improve the oxidation resistance. In one step, the effect of suppressing the oxidation of the gasket can be achieved in one step.

* Figure 23 shows the target containing conductive glue, which is buried in the mask. First, a gas generating film n is formed on the transparent substrate 10, and a mask 81 containing a desired pattern is formed on the gas generating film. The transparent substrate 10 and the cover 81 are made of a resin substrate, and the gas generating film 丨 and upper are used, and the cover 81 is fixed with an adhesive. The laser light comes from a laser semiconductor, while the gas generating film 11 uses carbon particles mixed with nitrocellulose. When the Cu glue 82 is embedded in the pattern of the mask 81, and field shooting is performed from the transparent substrate 10, the h glue 82 buried in the mask pattern is: S on the substrate 1 arranged opposite to the king on. In this way, using the mask for the second painting, compared with the painting without the mask, the painting has the advantages of precisely controlling 4 degrees and making the irradiation pitch more fine.

. FIG. 24A to FIG. 24D are target manufacturing processes f using a transparent substrate with a recessed portion. As shown in FIG. 24A, a concave portion 91 is provided on the transparent substrate 1. A resin substrate is used to facilitate the formation of the recesses 91. Figure 2 4B shows the use of solvents such as Aston (transliteration) to dissolve nitrocellulose added I pigment or Qi test particles, and to make a gas generator 9 2, ^ gas month generator 9 2 can use rubber A squeegee is applied to the above-mentioned recess 91.

Page 21 476108 V. Description of the invention (18) As shown in FIG. 24C, if the gas generating agent 92 coated on the above-mentioned recesses 91 is dried, a gas-generating film 9 can be formed in the bottom range of each of the above-mentioned recesses 91. 3. FIG. 24D forms a target material in which the above-mentioned recessed portion 91 is embedded with a metal glue 94 like a glue; and the gas generating film 93 is contained in the recessed portion 9 丨. As in the above-mentioned embodiment, when the laser irradiation is performed from the direction of the transparent substrate 丨, the metal paste 94 buried in the recessed portion 91 is drawn on the substrate arranged in the opposite direction. _ FIG. 25 is a schematic diagram of a semiconductor manufacturing apparatus used in the present invention. The semiconductor substrate 102 is set on the pedestal 103, and can be scanned in a vacuum chamber. = Nozzle 1 0 1 is filled with etching gas (C ") and other gases. By adjusting the flow rate of the etching gas and the exhaust volume of 1 pu, the pressure of the etching gas in the nozzle · 丨! Can be controlled. A gas generator is provided in the nozzle ιοί The supply device 100 can irradiate the gas generating agent (the gas generating film of FIG. 26) through a laser through the quartz window ι05. The figure and the figure show the cross section of the gas generating agent supply device J 〇〇 and the nozzle 1 〇1. On the bio-agent supply device 10 °, the “belt-shaped gas generator (gas waist)” 17 is rolled into a cylindrical shape at both ends. If the cylindrical scroll device 1 09 is rotated, the gas generator can be moved. In FIGS. 27 and 28, the embodiment of the present invention shown in FIGS. 25 and 26 is used to push the seal # 日 日 仏 + 日 入 乾 夺 版 衣 dress over clothes to seal. The etching gas in the case of indium is gas (.12 ) A copper film is formed on the surface of the copper. 2 is 2 0 ° C. The temperature of the disordered body can be shown from Figure Λ7Γ. The nozzle 110 is filled with gas, such as gas. Laser irradiation is performed in the direction of the heart substrate on the m substrate. After the irradiation,

476108 V. Description of the invention (19) '' A gas-generating film 107 generates gas, and the nozzle 110 rapidly ejects gas as shown in FIG. 28B. In this case, not only the gas generated by the gas generating film 107 but also the gas filled in the nozzle 110 is blown, and both of them are sprayed toward the semiconductor substrate 1 12. Due to the effect of the etching gas sprayed from the nozzle 110, as shown in FIG. 28B, a selective etching operation can be performed on the copper thin film. At the same time as f scroll device 1 0 9, scanning and laser irradiation f ′ on the semiconductor substrate 丨 2 can selectively select the copper thin film 1 1 1 on the semiconductor substrate 1 1 2

Etching of any pattern. The gas generating film is made of the same material as in the above embodiment. U According to the above structure, according to the above structure, a material is formed on the 1 bar material of the laser-forming thin film ′, and a semiconductor substrate can be irradiated with a low-energy laser to form a thin film. In addition, the target can be formed without spattering the target, and the 'special film' can be easily subjected to selective etching. Amendment No. 89118952 said Amendment — Tu Jingjing said

O: \ 66 \ 66403.ptc Page 24

Claims (1)

426m. Case No. 89118952 Amendment of Ninety-two Application Enclosures 1. A target material comprising: a transparent substrate having first and second surfaces disposed opposite to each other; a gas generating film disposed on the first surface; and a target film It is arranged on the gas generating film, and forms a thin film on a semiconductor substrate arranged to face the target film by laser irradiation from the second surface. 2. The target according to item 1 of the scope of patent application, wherein the transparent substrate material is selected from quartz, glass and resin. 3. The target according to item 1 of the patent application scope, wherein the first surface of the transparent substrate has a plurality of recesses, and a target film can be formed in the recesses through the gas generating film. 4. The target according to item 1 of the scope of patent application, wherein the above-mentioned gas generating film is formed of a nitrocellulose or a gas generating agent such as t e t r a s ο 1. 5. The target according to item 1 of the scope of patent application, wherein said gas generating film contains a mesh-shaped heat absorber. Wherein the above mesh-like 0 wherein the above-mentioned gas is generated, wherein the above-mentioned target film is made of gold, where the above-mentioned target film is silicon, wherein the above-mentioned target film is 6. According to the target material of the scope of patent application No. 5, the heat absorber material is made of carbon fiber and carbon mesh. Choose 7. According to the target of the scope of patent application No. 1, the film contains carbon particles. 8. According to the target of the scope of the patent application, the target is composed of metals such as, I, and copper. 9. The target material and semiconductor material according to item 1 of the scope of patent application. 10. Targets according to item 1 of the scope of patent application Silicon oxide, silicon nitride type insulators. O: \ 66 \ 66403.ptc Page 25 476108 Case No. 89118952 Amendment VI. Patent Application Scope 11. A target material comprising: a transparent substrate having first and second surfaces disposed oppositely; and a target film It is formed by a conductive paste disposed on the first surface, and is formed by forming a thin film on a semiconductor substrate disposed opposite to the target film by laser irradiation from the second surface. 12. The target material according to item 11 of the scope of the patent application, wherein the conductive adhesive contains a solvent that can be vaporized by laser irradiation. 13. A target material comprising: a transparent substrate having first and second surfaces disposed opposite to each other; a gas generating film disposed on the first surface; and a mask pattern on the gas generating film And a target film formed of a conductive paste buried in the above-mentioned mask pattern, which forms a thin film on a semiconductor substrate disposed opposite to the target film by laser irradiation from the second surface . 14. The target material according to item 13 of the scope of patent application, wherein the conductive paste contains carbon particles. 15. The target according to item 1 of the scope of patent application, wherein the thin film formed on the semiconductor substrate is a thin film. 16. The target according to item 1 of the scope of patent application, wherein the thin film formed on the semiconductor substrate is a thick film. 17. The target according to item 1 of the scope of patent application, wherein the above laser irradiation operation is performed using a laser device having a wavelength of 300 nm or less. 18. The target according to item 5 of the scope of patent application, wherein the laser irradiation operation is performed by using a laser device having a wavelength of 300 nm or more. 19. A method of forming a thin film on a semiconductor substrate, comprising: a preparing step for preparing first and second surfaces having opposed configurations O: \ 66 \ 66403.ptc Page 26 476108 Case No. 89118952 Amendment VI. Transparent substrates for patent application; Gas-generating film formation process, which is formed on the first surface; Target film formation process, which is used to Forming a target film on the gas-generating film; and a semiconductor substrate disposing step for disposing a semiconductor substrate on the opposite side of the target film; and the method for performing laser irradiation on the target film, and drawing the above on the semiconductor substrate Target film to form a thin film. 20. The method for forming a thin film on a semiconductor substrate according to item 19 of the scope of patent application, which uses the above-mentioned laser irradiation to generate gas from the gas-generating film. Into. 21. The method for forming a thin film on a semiconductor substrate according to item 19 of the patent application scope, wherein the gas generating film is composed of a gas generating agent such as nitrocellulose or tetr as 〇1. 22. A method for forming a thin film on a semiconductor substrate according to item 19 of the scope of patent application, wherein the target film is composed of a metal, a semiconductor, and an insulator 23. A method for forming a thin film on a semiconductor substrate, comprising: a preparation process Is used to prepare a transparent substrate with first and second surfaces arranged opposite to each other; a target film formation step, the target film is composed of a conductive paste containing a solvent that is vaporized by laser irradiation; and a semiconductor substrate An arrangement step for arranging a semiconductor substrate on the opposite side of the target film, O: \ 66 \ 66403.ptc Page 27 476108 _Case No. 89118952_ Revised Month_ Sixth, the scope of patent application This method is to apply laser irradiation to the target film, and draw the target film on the semiconductor substrate to form it. film. 24. The method for forming a thin film on a semiconductor substrate according to item 23 of the scope of patent application, wherein the thin film formed on the semiconductor substrate is a conductive thin film. 25. The method for forming a thin film on a semiconductor substrate according to item 23 of the scope of patent application, wherein the thin film formed on the semiconductor substrate is a conductive thick film. 26. A semiconductor manufacturing method comprising: a step of forming a thin film of a gas generating substance, which forms the above thin film by performing laser irradiation on a transparent substrate in front of a laser; and a step of vaporizing the gas generating substance from the above The transparent substrate selectively irradiates the gas-generating material film with laser light to vaporize the gas-generating material film. The method is to vaporize the gas-generating material to drive an etching gas filled around the gas-generating material. The etching gas is blown onto a semiconductor substrate disposed in front of the thin film of the gas generating substance, and a selective etching operation is performed on the thin film on the semiconductor substrate. 27. The method for manufacturing a semiconductor device according to item 26 of the scope of the patent application, wherein the etching gas filled around the gas-generating substance is chlorine gas, and laser irradiation can be used to selectively select the metal thin film formed on the semiconductor substrate. Etching operation. O: \ 66 \ 66403.ptc Page 28