CN108476597A - 用于hvdc功率变流器的阀组件 - Google Patents
用于hvdc功率变流器的阀组件 Download PDFInfo
- Publication number
- CN108476597A CN108476597A CN201580085695.0A CN201580085695A CN108476597A CN 108476597 A CN108476597 A CN 108476597A CN 201580085695 A CN201580085695 A CN 201580085695A CN 108476597 A CN108476597 A CN 108476597A
- Authority
- CN
- China
- Prior art keywords
- valve module
- container
- converter cell
- ontology
- holding element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002955 isolation Methods 0.000 claims abstract description 4
- 239000003990 capacitor Substances 0.000 claims description 118
- 238000010276 construction Methods 0.000 claims description 36
- 239000007789 gas Substances 0.000 claims description 36
- 125000006850 spacer group Chemical group 0.000 claims description 15
- 229910018503 SF6 Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 5
- WRQGPGZATPOHHX-UHFFFAOYSA-N ethyl 2-oxohexanoate Chemical compound CCCCC(=O)C(=O)OCC WRQGPGZATPOHHX-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 178
- 238000009413 insulation Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 11
- 239000004020 conductor Substances 0.000 description 8
- 239000011810 insulating material Substances 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/117—Stacked arrangements of devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02B—BOARDS, SUBSTATIONS OR SWITCHING ARRANGEMENTS FOR THE SUPPLY OR DISTRIBUTION OF ELECTRIC POWER
- H02B5/00—Non-enclosed substations; Substations with enclosed and non-enclosed equipment
- H02B5/06—Non-enclosed substations; Substations with enclosed and non-enclosed equipment gas-insulated
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/145—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
- H02M7/155—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/14—Mounting supporting structure in casing or on frame or rack
- H05K7/1422—Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
- H05K7/1427—Housings
- H05K7/1432—Housings specially adapted for power drive units or power converters
- H05K7/14339—Housings specially adapted for power drive units or power converters specially adapted for high voltage operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Inverter Devices (AREA)
- Dc-Dc Converters (AREA)
- Rectifiers (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2015/081258 WO2017114545A1 (en) | 2015-12-28 | 2015-12-28 | Valve unit for hvdc power converter |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108476597A true CN108476597A (zh) | 2018-08-31 |
CN108476597B CN108476597B (zh) | 2020-12-18 |
Family
ID=55066618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580085695.0A Active CN108476597B (zh) | 2015-12-28 | 2015-12-28 | 用于hvdc功率变流器的阀组件 |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN108476597B (zh) |
DE (1) | DE112015007244T5 (zh) |
WO (1) | WO2017114545A1 (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4675720A (en) * | 1984-08-23 | 1987-06-23 | Kabushiki Kaisha Toshiba | Enclosed thyristor valve |
EP0299275A1 (de) * | 1987-07-13 | 1989-01-18 | Siemens Aktiengesellschaft | Stromrichteranlage zum Kuppeln zweier Hochspannungs-Drehstromnetze |
JPH04208070A (ja) * | 1990-11-30 | 1992-07-29 | Electric Power Dev Co Ltd | ガス絶縁水冷却サイリスタ・バルブ |
WO2008034271A2 (en) * | 2006-09-21 | 2008-03-27 | Reinhard Joho | Encapsulated electrical valve module |
CN101523682A (zh) * | 2006-09-28 | 2009-09-02 | 西门子公司 | 高压直流输电设备的晶闸管阀 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE510196C2 (sv) * | 1996-03-28 | 1999-04-26 | Asea Brown Boveri | Gasisolerad halvledarventilanordning med ringformade elektrostatiska skärmar |
-
2015
- 2015-12-28 CN CN201580085695.0A patent/CN108476597B/zh active Active
- 2015-12-28 WO PCT/EP2015/081258 patent/WO2017114545A1/en active Application Filing
- 2015-12-28 DE DE112015007244.6T patent/DE112015007244T5/de active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4675720A (en) * | 1984-08-23 | 1987-06-23 | Kabushiki Kaisha Toshiba | Enclosed thyristor valve |
EP0299275A1 (de) * | 1987-07-13 | 1989-01-18 | Siemens Aktiengesellschaft | Stromrichteranlage zum Kuppeln zweier Hochspannungs-Drehstromnetze |
JPH04208070A (ja) * | 1990-11-30 | 1992-07-29 | Electric Power Dev Co Ltd | ガス絶縁水冷却サイリスタ・バルブ |
WO2008034271A2 (en) * | 2006-09-21 | 2008-03-27 | Reinhard Joho | Encapsulated electrical valve module |
CN101523682A (zh) * | 2006-09-28 | 2009-09-02 | 西门子公司 | 高压直流输电设备的晶闸管阀 |
Also Published As
Publication number | Publication date |
---|---|
WO2017114545A1 (en) | 2017-07-06 |
DE112015007244T5 (de) | 2018-09-20 |
CN108476597B (zh) | 2020-12-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20200513 Address after: Baden, Switzerland Applicant after: ABB grid Switzerland AG Address before: Baden, Switzerland Applicant before: ABB Switzerland Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Swiss Baden Patentee after: Hitachi energy Switzerland AG Address before: Swiss Baden Patentee before: ABB grid Switzerland AG |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240111 Address after: Zurich, SUI Patentee after: Hitachi Energy Co.,Ltd. Address before: Swiss Baden Patentee before: Hitachi energy Switzerland AG |