CN108470777A - The testing of materials unit preparation method for possessing nanoscale spacing small electrode for transmission electron microscope original position energization chip - Google Patents
The testing of materials unit preparation method for possessing nanoscale spacing small electrode for transmission electron microscope original position energization chip Download PDFInfo
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- CN108470777A CN108470777A CN201810203499.4A CN201810203499A CN108470777A CN 108470777 A CN108470777 A CN 108470777A CN 201810203499 A CN201810203499 A CN 201810203499A CN 108470777 A CN108470777 A CN 108470777A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000004154 testing of material Methods 0.000 title claims abstract description 17
- 230000005540 biological transmission Effects 0.000 title claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000012360 testing method Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 11
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 11
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 11
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 11
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 9
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 239000011241 protective layer Substances 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000011810 insulating material Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000000231 atomic layer deposition Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 238000005566 electron beam evaporation Methods 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000011282 treatment Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 238000011160 research Methods 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 4
- 238000011065 in-situ storage Methods 0.000 abstract description 4
- 239000000284 extract Substances 0.000 abstract 1
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- 230000001681 protective effect Effects 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
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- 150000002500 ions Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
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- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
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- 238000002164 ion-beam lithography Methods 0.000 description 1
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- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a kind of testing of materials unit preparation methods for possessing nanoscale spacing small electrode for transmission electron microscope original position energization chip; its testing of materials unit is made of the metal layer of small size, insulating layer, test material and protective layer; preparation method uses focused ion beam (FIB) technology, by etching in SiO2Metal layer on substrate; obtain the metal electrode slot of nanoscale; test material is filled into metal electrode slot; after protective mulch, the method for preparing TEM sample using FIB extracts the unit comprising metal layer and test material; it is transferred on energization chip; the testing of materials unit for possessing nanometer scale spacing small electrode is formd, which is carried out to energization in situ, the relationship that can be used between the microstructure change and electric property of research test material in TEM.
Description
Technical field
The invention belongs to semiconductor device fabrication field, it is related to a kind of receiving for possessing for transmission electron microscope original position energization chip
The preparation method of the testing of materials unit of meter level spacing small electrode.
Background technology
Transmission electron microscope（Transmission Electron Microscope, TEM）It is using electron beam as light
Source is focused electron beam using electromagnetic coil as magnetic lenses, is imaged using the electronics for penetrating sample, and material atom scale is obtained
The precise electronic optical instrument of structural information.TEM is mainly used in the morphology observation of sample, material phase analysis, and crystal structure determines,
Defect analysis, the constituent analysis of substance, element distribution analysis and chemical state analysis etc., be current material, part physical,
Essential research tool in chemistry, biology, medical research.Focused ion beam（Focused Ion Beam, FIB）It is by liquid
State metal（Such as Ga）The ion beam that ion source generates is irradiated in sample surfaces and generates secondary electron after ion gun accelerates to focus
Signal obtains charge pattern.FIB can remove surface atom with heavy current ion beam, carry out micro/nano level surface topography and add
Work realizes fixed point cutting, selective material vapor deposition：Make conductor/non-conductor deposition, and the property strengthened or selectivity in regional area
Etching, therefore, FIB is the indispensable means for preparing high quality TEM sample.
Many researchs in recent years are by tem observation in outfield（Electricity/heat/power/gas）Under effect, material internal occurs in real time
Microstructure change, this original position TEM technologies（in-situTEM）Have the characteristics that directly to observe, real time monitoring, emphatically pair
Change procedure is analyzed, and helps to further understand material property material structure is and guided to optimize.Apply electricity in situ in TEM
, some manufacturers both domestic and external, which have, releases commercialized energization specimen holder in situ, and electric signal communication can be entered to TEM sample room
Inside changes behavior for structure of the research material under extra electric field.This original position specimen holder uses commercialization energization core
Piece processes the energization chip prepared using MEMS technology, and the electrode in such chip uses optical exposure and stripping technology system
Standby, electrode spacing is larger, and in 3 um or more, the test cell that test material is directly carried to formation up is oversized, no
It can be good at performance of the simulation test material in practical devices.
Invention content
The purpose of the present invention is in view of the deficiencies of the prior art and provide one kind be used for transmission electron microscope original position energization chip
The testing of materials unit for possessing nanoscale spacing small electrode preparation method, this method solve in the past that test material is direct
The oversized problem of the test cell formed up is carried, table of the simulation test material in practical devices is can be very good
Now, the research of relationship provides a great convenience between material structure and performance.
Realizing the specific technical solution of the object of the invention is：
A kind of testing of materials unit preparation method for possessing nanoscale spacing small electrode for transmission electron microscope original position energization chip,
This method includes step in detail below：
1）Select silicon chip as substrate, and Si substrate cleaning treatments is clean；
2）Using thermal oxidation technology, the SiO of 500-1000 nm is prepared in Si substrate surfaces2Substrate；
3）Using magnetron sputtering, electron beam evaporation, chemical vapor deposition or atomic layer deposition thin film Preparation equipment, in step 2）Institute
The SiO obtained2The metallic film of 1-500 nm, metal Au, Pt, W, Al or Cu are deposited on substrate；
4）Using magnetron sputtering, electron beam evaporation, chemical vapor deposition or atomic layer deposition thin film Preparation equipment, in step 3）Institute
Continue the insulating material film of deposition 1-500 nm on the metallic film obtained, the insulating materials is SiO2Or SiN；
5）Using FIB ion beam etch process, in step 4）Strip groove is etched on the insulating material film of gained, the slot
Depth is metallic film and the common thickness of insulating material film, and the length of slot is in 100 nm -10 um, the width D of slot, that is, small
Electrode spacing, D=1-1000 nm；
6）Using magnetron sputtering, electron beam evaporation, chemical vapor deposition or atomic layer deposition thin film Preparation equipment, in step 5）Institute
Test material is deposited on the strip groove obtained, the deposition thickness of test material is step 3）In metallic film and step 4）In
Insulating material film common thickness；
7）Using magnetron sputtering, electron beam evaporation, chemical vapor deposition or atomic layer deposition thin film Preparation equipment, in step 6）Institute
Continue deposited protective layer material in the test material obtained；The protective layer material is SiO2Or SiN, thickness at least 10 nm；
8）Using FIB methods, by step 7）The section of gained multi-layer film material is extracted in the form of thin slice, this section and length
Strip-shaped grooves direction is vertical, and the sheet length extracted is 5-10 um, and thickness is 10-100 nm；
9）By step 8）Si substrates cut-out in gained thin slice；
10）By step 9）The thin slice of gained is transferred on energization chip, and the metal electrode of chip is connected with the FIB methods for depositing Pt
With the metallic film on thin slice, the testing of materials unit for possessing nanometer scale spacing small electrode is made.
To the requirement of smaller szie electrode spacing when the present invention is in order to meet testing of materials, provide a kind of for transmiting electricity
The preparation method of the testing of materials unit for possessing nanoscale spacing small electrode of mirror original position energization chip, obtained testing of materials
Unit changes behavior for studying structure of the material in small-size materials test cell under extra electric field.
Small electrode spacing-controllable of the present invention, preparation method transplantability is high, can realize that material cell is powered at the nanoscale
When Microstructure characterization, to the relationship between the micro-structure and property of more convenient research nano material.
Description of the drawings
Fig. 1 is that the present invention passes through step 4 in SiO2Section being sequentially depositing on substrate after metallic film and insulating material film
Face schematic diagram；
Fig. 2 is schematic cross-section of the present invention after step 5 goes out groove with FIB ion beam etchings；
Fig. 3 is schematic cross-section of the present invention after step 7 is sequentially depositing test material and protective layer；
Fig. 4 is thin slice schematic diagram of the present invention after the cut-out Si substrates obtained by step 8, step 9；
Fig. 5 is the present invention by the testing of materials cellular construction signal for possessing nanometer scale spacing small electrode obtained by step 10
Figure.
Specific implementation mode
Below by embodiment, the substantive features and progress that the present invention is further explained, given embodiment are only limited to
Explain the present invention, but the present invention is not limited only to the embodiment described.
Embodiment
A kind of system of the testing of materials unit for possessing nanoscale spacing small electrode for transmission electron microscope original position energization chip
Preparation Method is as follows：
Implementation steps 1 first）, one 4 cun of silicon chip substrates are provided, and the silicon chip substrate is done into cleaning treatment, so as to subsequent
The oxidation insulating layer of high-purity is prepared in step.In the present embodiment, the silicon chip substrate is done to the process packet of cleaning treatment
It includes：
Step 1-1), by the silicon chip substrate be placed in by ammonium hydroxide, hydrogen peroxide, deionized water according to volume ratio be 1：2：5 proportionings are mixed
It closes in solution and boils 5 min, rinse 3 min with deionized water after cooling, then dried up with nitrogen, remove the silicon chip substrate table
The greasy dirt and bulky grain in face；
Step 1-2）, by the silicon chip substrate be placed in by hydrochloric acid, hydrogen peroxide, deionized water according to volume ratio be 1：2：5 proportionings are mixed
It closes in solution and boils 5 min, rinse 3 min with deionized water after cooling, dried up later with nitrogen, remove the silicon chip substrate
The metal ion on surface；
Step 1-3), the silicon chip substrate is placed in 120 DEG C of baking oven and toasts 30 min, to remove surface moisture again.
Then implementation steps 2）, the silicon chip substrate surface of thermal oxidation technology after cleaning is used to prepare a layer thickness as 500
The SiO of nm2Substrate.
Then implementation steps 3）, using direct current PVD process, in above-mentioned SiO2Substrate surface deposition thickness is the W of 10 nm
Metal layer, sputtering power are 150 W, and sputtering Ar throughputs are 80 sccm.
Then implementation steps 4）, using exchange PVD process, the W layer on surface of metal deposition thickness after implementation steps 3 is 5
The SiO of nm2Insulating layer, radio-frequency sputtering power are 95 W, and sputtering Ar throughputs are 20 sccm, have deposited SiO2Section signal afterwards
Figure is as shown in Figure 1.
Then implementation steps 5）, using FIB focused-ion-beam lithography techniques, etched on the W metal layers after implementation steps 4
It is 20 nm to go out width, and length is the groove of 1 um, and gash depth is 15 nm（SiO2The thickness of insulating layer adds the thickness of W metal layers
Degree）, the schematic cross-section gone out with FIB ion beam etchings after groove is as shown in Figure 2.
Then implementation steps 6）, on the groove after implementation steps 5, using direct current PVD process, deposition thickness is 15 nm
Ge2Sb2Te5Phase-change material, sputtering power are 20 W, and sputtering Ar throughputs are 110 sccm.
Then step 7 is carried out）, on the material after implementation steps 6, using exchange PVD process, deposition thickness is 20 nm
SiO2Protective layer, radio-frequency sputtering power are 95 W, and sputtering Ar throughputs are 20 sccm, have deposited SiO2Schematic cross-section afterwards
As shown in Figure 3.
Then step 8 is carried out）, the method that TEM sample is prepared using FIB, by the section of the multi-layer film material of gained step 7
It is extracted in the form of thin slice, this section is vertical with strip groove direction, obtains lamina dimensions and grows 5 um, high 1um, thickness
100 nm。
Then step 9 is carried out）, by step 8）Si substrates cut-out in gained thin slice, as shown in Figure 4.
Then step 10 is carried out）, by step 9）The thin slice of gained is transferred on energization chip, energization used in the present embodiment
The electrode spacing of chip is 3 um, the metal large electrode and the metallic film on thin slice for connecting chip with the FIB methods for depositing Pt,
Final to produce the testing of materials unit that small electrode spacing is 20 nm, structural schematic diagram is as shown in Figure 5.
In conclusion present invention utilizes the nanoprocessing characteristic of FIB, the testing of materials of small electrode spacing-controllable is produced
Unit solves the problems, such as that the test cell that test material was directly carried to formation up in the past is oversized, can be very good
Performance of the simulation test material in practical devices, between material structure and performance the research of relationship provide a great convenience,
Industrial utilization with height.
Above-mentioned implementation example is only used to illustrate and not limit the technical solutions of the present invention.Implementation described herein is exemplary
What deformation and change were equally possible, implement exemplary replacement and equivalent various portions for those of ordinary skill in the art
Part is well known.It should be appreciated by the person skilled in the art that in the case where not departing from spirit of that invention or substantive characteristics, this
Invention can otherwise, structure, arrangement, ratio, and realize for other substrates, material and component.It is any not take off
Technical solution from spirit and scope of the invention should all cover in the application range of the present invention.
Claims (1)
1. a kind of standby side of testing of materials unit style for possessing nanoscale spacing small electrode for transmission electron microscope original position energization chip
Method, which is characterized in that this method includes step in detail below：
1）Select silicon chip as substrate, and Si substrate cleaning treatments is clean；
2）Using thermal oxidation technology, the SiO of 500-1000 nm is prepared in Si substrate surfaces2Substrate；
3）Using magnetron sputtering, electron beam evaporation, chemical vapor deposition or atomic layer deposition thin film Preparation equipment, in step 2）Institute
The SiO obtained2The metallic film of 1-500 nm, metal Au, Pt, W, Al or Cu are deposited on substrate；
4）Using magnetron sputtering, electron beam evaporation, chemical vapor deposition or atomic layer deposition thin film Preparation equipment, in step 3）Institute
Continue the insulating material film of deposition 1-500 nm on the metallic film obtained, the insulating materials is SiO2Or SiN；
5）Using FIB ion beam etch process, in step 4）Strip groove is etched on the insulating material film of gained, the slot
Depth is metallic film and the common thickness of insulating material film, and the length of slot is in 100 nm -10 um, the width D of slot, that is, small
Electrode spacing, D=1-1000 nm；
6）Using magnetron sputtering, electron beam evaporation, chemical vapor deposition or atomic layer deposition thin film Preparation equipment, in step 5）Institute
Test material is deposited on the strip groove obtained, the deposition thickness of test material is step 3）In metallic film and step 4）In
Insulating material film common thickness；
7）Using magnetron sputtering, electron beam evaporation, chemical vapor deposition or atomic layer deposition thin film Preparation equipment, in step 6）Institute
Continue deposited protective layer material in the test material obtained；The protective layer material is SiO2Or SiN, thickness at least 10 nm；
8）Using FIB methods, by step 7）The section of gained multi-layer film material is extracted in the form of thin slice, this section and length
Strip-shaped grooves direction is vertical, and the sheet length extracted is 5-10 um, and thickness is 10-100 nm；
9）By step 8）Si substrates cut-out in gained thin slice；
10）By step 9）The thin slice of gained is transferred on energization chip, and the metal electrode of chip is connected with the FIB methods for depositing Pt
With the metallic film on thin slice, the testing of materials unit for possessing nanometer scale spacing small electrode is made.
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| CN201810203499.4A CN108470777B (en) | 2018-03-13 | 2018-03-13 | Preparation method of material testing unit with nano-scale interval small electrodes for in-situ power-on chip of transmission electron microscope |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109626321A (en) * | 2018-11-13 | 2019-04-16 | 华东师范大学 | Transmission electron microscope and the general silicon nitride film window preparation method of piezoelectricity force microscope |
| CN109946340A (en) * | 2019-04-15 | 2019-06-28 | 华东师范大学 | A kind of preparation method of two-dimensional layer material sample electrical testing microelectrode |
| CN110797457A (en) * | 2019-10-22 | 2020-02-14 | 华东师范大学 | Preparation method of multilayer storage structure transmission electron microscope in-situ electrical test unit |
| CN113218977A (en) * | 2021-04-29 | 2021-08-06 | 苏州鲲腾智能科技有限公司 | In-situ observation integrated circuit structure and preparation method of transmission electron microscope sample evolved by same |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101049905A (en) * | 2006-04-07 | 2007-10-10 | 中国科学院物理研究所 | Preparation method for developing single Nano line or array type Nano lines |
| CN101545872A (en) * | 2009-05-15 | 2009-09-30 | 北京工业大学 | Low-dimensional nano material microstructure and device and method for electrical performance testing |
| CN101728235A (en) * | 2008-12-30 | 2010-06-09 | 四川虹欧显示器件有限公司 | Accurate processing method for conductor or conductor layer and method for judging on and off of conductor or conductor layer |
| CN201637699U (en) * | 2009-05-15 | 2010-11-17 | 北京工业大学 | Low-dimension nano material microstructure and electric property testing device |
| CN102445480A (en) * | 2011-09-23 | 2012-05-09 | 东南大学 | Method for preparing nano-gap electrodes on surface of nano-pore and in nano-pore |
| US20130265031A1 (en) * | 2012-04-05 | 2013-10-10 | Samsung Electronics Co., Ltd. | Nanogap sensor and method of manufacturing the same |
-
2018
- 2018-03-13 CN CN201810203499.4A patent/CN108470777B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101049905A (en) * | 2006-04-07 | 2007-10-10 | 中国科学院物理研究所 | Preparation method for developing single Nano line or array type Nano lines |
| CN101728235A (en) * | 2008-12-30 | 2010-06-09 | 四川虹欧显示器件有限公司 | Accurate processing method for conductor or conductor layer and method for judging on and off of conductor or conductor layer |
| CN101545872A (en) * | 2009-05-15 | 2009-09-30 | 北京工业大学 | Low-dimensional nano material microstructure and device and method for electrical performance testing |
| CN201637699U (en) * | 2009-05-15 | 2010-11-17 | 北京工业大学 | Low-dimension nano material microstructure and electric property testing device |
| CN102445480A (en) * | 2011-09-23 | 2012-05-09 | 东南大学 | Method for preparing nano-gap electrodes on surface of nano-pore and in nano-pore |
| US20130265031A1 (en) * | 2012-04-05 | 2013-10-10 | Samsung Electronics Co., Ltd. | Nanogap sensor and method of manufacturing the same |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109626321A (en) * | 2018-11-13 | 2019-04-16 | 华东师范大学 | Transmission electron microscope and the general silicon nitride film window preparation method of piezoelectricity force microscope |
| CN109946340A (en) * | 2019-04-15 | 2019-06-28 | 华东师范大学 | A kind of preparation method of two-dimensional layer material sample electrical testing microelectrode |
| CN110797457A (en) * | 2019-10-22 | 2020-02-14 | 华东师范大学 | Preparation method of multilayer storage structure transmission electron microscope in-situ electrical test unit |
| CN113218977A (en) * | 2021-04-29 | 2021-08-06 | 苏州鲲腾智能科技有限公司 | In-situ observation integrated circuit structure and preparation method of transmission electron microscope sample evolved by same |
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