CN108462378B - Self-adaptive BJT driving circuit - Google Patents

Self-adaptive BJT driving circuit Download PDF

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Publication number
CN108462378B
CN108462378B CN201810213039.XA CN201810213039A CN108462378B CN 108462378 B CN108462378 B CN 108462378B CN 201810213039 A CN201810213039 A CN 201810213039A CN 108462378 B CN108462378 B CN 108462378B
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Prior art keywords
tube
power
power tube
sampling
circuit
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CN108462378A (en
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赵鑫
宗强
刘准
吴寿化
管磊
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Shenzhen Chip Hope Micro-Electronics Ltd
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Shenzhen Chip Hope Micro-Electronics Ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0009—Devices or circuits for detecting current in a converter

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

The invention discloses a self-adaptive BJT (bipolar junction transistor) driving circuit which is characterized by comprising a transformer or an inductor, a power bipolar triode, a sampling circuit and a driving circuit, wherein a collector of the power bipolar triode is connected with the transformer or the inductor, an emitter of the power bipolar triode is connected with the sampling circuit, a base of the power bipolar triode is connected with the driving circuit, the sampling circuit is connected with the driving circuit, and the sampling circuit is used for sampling current flowing through a CE (junction) of the power bipolar triode. The invention provides a method for realizing a self-adaptive BJT driving circuit, which can dynamically adjust the driving current of a BJT by sampling the CE junction current of an NPN1 triode, thereby effectively avoiding the efficiency problem of the traditional BJT driving circuit.

Description

Self-adaptive BJT driving circuit
[ technical field ]
The invention relates to a BJT driving circuit, in particular to a self-adaptive BJT driving circuit.
[ background art ]
The conventional BJT driving circuit has a fixed driving current, which causes a problem in applications with a wide output power variation range. One problem is that if the driving current setting is large, when the output power is small, the excessive driving current will affect the system efficiency, and the other problem is that if the driving current setting is small, when the output power is large, the driving current will not be enough, resulting in large on-resistance of the BJT, which will also affect the system efficiency. In order to overcome the defects in the prior art and solve the efficiency problem, the invention provides a method for realizing a self-adaptive BJT drive circuit, which can dynamically adjust the drive current of a BJT through sampling the CE junction current of an NPN1 triode, thereby effectively avoiding the efficiency problem of the traditional BJT drive circuit.
[ summary of the invention ]
The invention provides a self-adaptive BJT driving circuit, which utilizes a sampling circuit to sample CE junction current and dynamically adjusts the driving current of a BJT.
Another object of the present invention is to provide a flyback topology circuit using an adaptive BJT driver.
Another object of the present invention is to provide a buck topology circuit using an adaptive BJT driving circuit.
Another technical problem to be solved by the present invention is to provide a buck-boost topology circuit using an adaptive BJT driving circuit.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
the utility model provides a self-adaptation BJT drive circuit, includes a transformer or an inductance, a power bipolar transistor, a sampling circuit, a drive circuit, power bipolar transistor's collecting electrode and transformer or inductance are connected, and the projecting pole is connected with sampling circuit, and the base is connected with drive circuit, sampling circuit and drive circuit interconnect, sampling circuit is used for the sampling current that flows through power bipolar transistor CE knot.
Furthermore, the driving circuit adjusts the magnitude of the driving base current of the power bipolar triode according to the CE junction current of the power bipolar triode sampled by the sampling circuit.
Further, when the power bipolar triode is in saturated conduction, the sampling circuit samples the current flowing through the power bipolar triode to be the current peak value of the CE junction of the power bipolar triode.
A flyback topology circuit uses an adaptive BJT driving circuit.
A buck topology circuit uses an adaptive BJT driver circuit as described above.
A buck-boost topology circuit uses an adaptive BJT drive circuit as described above.
The invention has the beneficial effects that:
according to the invention, the sampling circuit is arranged in the BJT circuit, and the sampling circuit can sample the junction current of the power bipolar transistor CE to dynamically adjust the drive current of the BJT, so that the efficiency problem of the traditional BJT drive circuit is effectively avoided.
[ description of the drawings ]
Fig. 1 shows a circuit diagram of an adaptive BJT driver circuit according to the present invention.
Fig. 2 shows a simplified diagram of an adaptive BJT driver circuit according to the present invention.
Fig. 3 shows the operation waveforms of the adaptive BJT driving circuit provided in the present invention.
Fig. 4 shows a circuit diagram of the present invention applied in a flyback topology circuit.
Fig. 5 shows a circuit diagram of the invention applied in a buck topology.
Fig. 6 shows a circuit diagram of the present invention applied to a buck-boost topology circuit.
[ detailed description of the invention ]
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 1, the adaptive BJT driving circuit includes a transformer or an inductor 1, a power bipolar transistor 2, a sampling circuit 3, and a driving circuit 4, wherein a collector 21 of the power bipolar transistor 2 is connected to the transformer or the inductor 1, an emitter 22 is connected to the sampling circuit 3, a base 23 is connected to the driving circuit 4, the sampling circuit 3 is connected to the driving circuit 4, and the sampling circuit 3 is configured to sample a current flowing through a CE junction of the power bipolar transistor.
When the power bipolar triode is in saturated conduction, the sampling circuit samples the current flowing through the power bipolar triode to be the current peak value of the CE junction of the power bipolar triode.
FIG. 2 is a simplified diagram of an adaptive BJT drive circuit in which the current I of a power bipolar transistor is sampled by a sampling circuit1According to the sampling result, the driving circuit is controlled to generate the driving current I of the BJT2Let I2＝I1Where k is a proportionality constant and the value of k is typically set slightly less than the β value for a power bipolar transistor, where β is the base-emitter current amplification factor of the transistor.
FIG. 3 shows waveforms of various points during operation, where PWM is a switching signal of a power bipolar transistor, I1For the current flowing through the power bipolar transistor, IsampleIs the output of the sampling circuit and has a value of I1Peak value of (1)2A drive current generated for the drive circuit, and I2＝IsampleWhere k is a proportionality constant that is typically set to a value slightly less than β for a power bipolar transistor, β is the base emitter current amplification factor of the transistor.
As shown in fig. 4, the adaptive BJT driving circuit is applied to a flyback topology circuit, in which even if the output power changes greatly, the driving circuit can automatically adjust the driving current I according to the current flowing through the power bipolar transistor2Thereby increasing system efficiency.
Fig. 5 provides a reference circuit applying the adaptive BJT driving circuit in a buck topology circuit, which can be implemented by, but not limited to, the aforementioned method, where the VE port of fig. 4 is connected to the emitter of the driven BJT, MN1 is the main power transistor, MN2 is the sampling transistor, and their area ratio is SMN1: SMN2 ═ n, where SMN1 represents the area of MN1 transistor, SMN2 represents the area of MN2 transistor, n is the proportionality constant, VBIAS is the current bias voltage, I is the current bias voltage, and I is the current bias voltage1,I2The current flowing through MN2 is 1/n times of the current flowing through MN1 as current source, and forms a negative feedback loop from MN5 and MN6 to MN7, and then makes I1＝I2Thus, the current flowing through MN7 will be equal to the current flowing through MN2, according to the I generated by the circuitOUTAnd then generates the driving current in proportion.
Fig. 6 provides a reference circuit applying the adaptive BJT driving circuit in a buck-boost topology circuit, which can be implemented by, but not limited to, the aforementioned method, where the VE port of fig. 5 is connected to the emitter of the driven BJT, MN1 is the main power transistor, MN2 is the sampling transistor, the area ratio of these sampling transistors is SMN1: SMN2 ═ n, SMN1 represents the area of MN1 transistor, SMN2 represents the area of MN2 transistor, n is the proportionality constant, the current flowing through MN2 transistor is 1/n times the current flowing through MN1 transistor, MN5 and MN6 form a negative feedback loop to MN7, and I is set to1＝I2Thus, the current flowing through MN7 would be equal to the current flowing through MN2, according to whichI generated by electric circuitOUTAnd then generates the driving current in proportion.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiment, and all technical solutions belonging to the principle of the present invention belong to the protection scope of the present invention. Modifications to the disclosed embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention.

Claims (1)

1. A self-adaptive BJT driving circuit comprises a transformer or an inductor, a power bipolar triode, a sampling circuit and a driving circuit; the collector of the power bipolar triode is connected with a transformer or an inductor, the emitter of the power bipolar triode is connected with a sampling circuit, the base of the power bipolar triode is connected with a driving circuit, the sampling circuit is connected with the driving circuit, and the sampling circuit is used for sampling current flowing through a CE junction of the power bipolar triode; the driving circuit adjusts the magnitude of the driving base current of the power bipolar triode according to the CE junction current of the power bipolar triode sampled by the sampling circuit; when the power bipolar triode is in saturated conduction, the sampling circuit samples the current flowing through the power bipolar triode to be the current peak value of a CE (chip area) junction of the power bipolar triode, and the sampling circuit is characterized in that:
the VE port of the BJT driving circuit is connected with the emitter of the driven BJT, and the BJT driving circuit further comprises: a main power tube MN1, a sampling tube MN2, a power tube MN3, a power tube MN4, a power tube MN5, a power tube MN6, a power tube MN7, a switch tube MP1 and a switch tube MP 2; the control end of the main power tube MN1 and the control end of the sampling tube MN2 are respectively connected with a DRV end; the first end of the main power tube MN1 is connected with the VE end, and the second end is grounded; the first end of the sampling tube MN2 is connected with the VE end, and the second end of the sampling tube MN2 is respectively connected with the first end of the power tube MN3 and the second end of the power tube MN 6;
the control end of the power tube MN3 and the control end of the power tube MN4 are respectively connected with a VBIAS end, the first end of the power tube MN3 is connected with the second end of the power tube MN6, and the second end is grounded;
the first end of the power tube MN4 is connected with the second end of the power tube MN5, and the second end is grounded; the first end of the power tube MN4 is also connected with the second end of the power tube MN 7;
the first end of the power tube MN5 passes through a current source I1Is connected with a VCC end; the first end of the power tube MN6 passes through a current source I2Is connected with a VCC end; the first end of the power tube MN5 is also connected with the control end of the power tube MN5 and the control end of the power tube MN6 respectively;
the control end of the power tube MN7 is coupled to the first end of the power tube MN6, and the second end of the power tube MN7 is connected to the second end of the power tube MN 5;
the control end of the switch tube MP1 is connected with the control end of the switch tube MP2, and the first end of the switch tube MP1 and the second end of the switch tube MP2 are respectively connected with the VCC end; the second end of the switch tube MP1 is connected with the first end of the power tube MN 7; the control end of the switch tube MP1 is also connected with the first end of the power tube MN 7; the second end of the switching tube MP2 is connected to the output current IOUT；
SMN1 represents the area of a main power tube MN1, SMN2 represents the area of a sampling tube MN2, the area ratio of the SMN1 to the SMN2 is n, n is a proportionality constant, the current flowing through the sampling tube MN2 is 1/n times of the current flowing through the main power tube MN1, a negative feedback loop is formed from a power tube MN5 and a power tube MN6 to a power tube MN7, and I is enabled to be I1＝I2Thus, the current flowing through the power transistor MN7 is equal to the current flowing through the power transistor MN2, and I is generated according to the feedback circuitOUTAnd then generates the driving current in proportion.
CN201810213039.XA 2018-03-15 2018-03-15 Self-adaptive BJT driving circuit Active CN108462378B (en)

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Application Number Priority Date Filing Date Title
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CN108462378B true CN108462378B (en) 2020-07-03

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012090435A (en) * 2010-10-20 2012-05-10 Mitsubishi Electric Corp Drive circuit and semiconductor device equipped with the same
TWI458245B (en) * 2013-01-07 2014-10-21 Richtek Technology Corp Switching power conversion device and its switching controller and driving method
US9520796B2 (en) * 2015-03-06 2016-12-13 Stmicroelectronics S.R.L. Control method and device for quasi-resonant high-power-factor flyback converter
CN107482932A (en) * 2017-08-31 2017-12-15 深圳市芯茂微电子有限公司 A kind of self-powered double pole triode drive circuit and switching power circuit

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