CN108445525A - Face pixelated array detector, radiation detecting system and radiation field detection method - Google Patents

Face pixelated array detector, radiation detecting system and radiation field detection method Download PDF

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Publication number
CN108445525A
CN108445525A CN201810095146.7A CN201810095146A CN108445525A CN 108445525 A CN108445525 A CN 108445525A CN 201810095146 A CN201810095146 A CN 201810095146A CN 108445525 A CN108445525 A CN 108445525A
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cathode
radiation field
radiation
detection
dead time
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CN108445525B (en
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张岚
顾铁
刘柱
王伟
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Zhang Lan
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Yi Ruixin Material Technology (taicang) Co Ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/24Measuring radiation intensity with semiconductor detectors

Abstract

A kind of face pixelated array detector of present invention offer, radiation detecting system and radiation field detection method, including:Positioned at the pel array anode of the first surface of detection medium;Positioned at the cathode of the second surface of detection medium, cathode includes several cathode electrode blocks, and each cathode electrode block is mutual indepedent.The photon of cathode plane different location is reached in the present invention simultaneously, can achieve the purpose that the photon signal of correct differentiation while arrival from the cathode electrode block read output signal of connection different subregions;It self is calculated by system simultaneously and judges that realization is high, medium and low, the mode of various level of radiation fields flexible Application improves the application range of detection system and flexible processing capacity;System operators can be allowed in the case where need not additionally configure, it is easy directly to use same detection system equipment, accurate measurement result in the case of different radiation field intensities is obtained, is disposed for subsequent environmental treatment and most quickly and effectively foundation is provided.

Description

Face pixelated array detector, radiation detecting system and radiation field detection method
Technical field
The present invention relates to nuclear radiation detection and Application of Nuclear Technology field, more particularly to a kind of face pixelated array detector, Radiation detecting system and radiation field detection method.
Background technology
Radionuclide search and detection identification technology are widely used in environmental monitoring, nuclear power station operation whole process prison The security security protection that radionuclide smuggling or dirty bomb attack in pipe, the monitoring of other nuclear facilities, Nuclear Accident Emergency test, core anti-terrorism Equal fields.
Radionuclide test device includes the gamma spectrums based on NaI (sodium iodide), CsI (cesium iodide), high-purity Ge (germanium) Instrument, gamma spectrometer, gamma camera, Compton (compton) camera based on cadmium-zinc-teiluride (CdTe, CdZnTe, CZT) etc..It is based on The energy resolution of the gamma spectrometer of NaI, CsI is low, is applied to on-the-spot test more;Gamma spectrometer energy based on HpGe Ge point Resolution is optimal in gamma spectrometer, but the device of liquid nitrogen refrigerating and maintenance, limits it and more applies in laboratory.Nearly two In 30 years, items research and the increasingly mature cadmium-zinc-teiluride of technology (CdTe, CdZnTe, CZT) semiconductor detector, as room temperature Gamma and X-ray detector become NaI, and the substitute products of CsI and high-purity Ge formally move towards market, are widely used in each Field.The high detection efficient of CZT, high energy resolution are not required to the operability of liquid nitrogen refrigerating at room temperature, make it at many scenes In real time in monitoring, advantage is notable.Traditional portable gamma spectrometer, is typically only capable to provide radioactivity present in detected environment The energy of nucleic, type and dosage.And the gamma spectrometer advantage more outstanding based on CZT semiconductor detectors is, single Ray may be implemented in the sensitive function of three-dimensional position of detector internal-response position in CZT materials, passes through special electrode design With read-out electronics system and algorithm, the Compton scatter principle to be reacted using photon and substance obtains radionuclide Ray enters the incident direction of CZT, and applied in CZT radiation image-forming systems.The sensitive CZT detector of three-dimensional position is just in this way Can realize radionuclide energy test simultaneously, nucleic category identification, dosage and radionuclide source in the environment there are sides Position-finding.This is special derived from the positioning of the nucleic source that the sensitive specific function of CZT detector three-dimensional position newly increases in the environment Property so that CZT is portable or fixed gamma spectrometer can provide comprehensive data for fields such as environmental monitorings, need not answer The splicing of miscellaneous multiple spot Multidirectional-moving measurement result, and efficiently obtain pollution sources or radiographic source space distribution information.
As shown in Figure 1, CZT semiconductor detectors 1 include crystal detection 12, it is located at the sun on 12 1 surface of the crystal detection Pole 11 is located at the cathode 13 of the crystal detection 12 and 11 apparent surface of the anode;As shown in Fig. 2, anode surface is typically face Pixelated array, by 111 forming array structure of multiple pixel anodes;And cathode plane is big plane electrode, an only electrode block, As shown in Figure 3.Ray photons occur Compton effect from cathode plane incidence, with the crystal detection and generate ionization or excitation, electricity Son and hole move to cathode and anode respectively, and system obtains amplitude and temporal information for subsequent from cathode and anode simultaneously Data processing, each anode pixels signal correspond to a signal of planar cathode.
In the search detection of radiographic source in carrying out environment, because the characteristics of crystal detection itself, it usually needs in system In design or follow-up signal processing, progress is specially targetedly corrected, and is subside to remove the charge that crystal defect is brought, amplitude Fluctuation and homogeneity question, charge between different pixels the problems such as sharing.At this moment it needs reading letter from each pixel of anode Number while, time that also will be from cathode read output signal and amplitude information, assume at this time cathode a signal and anode certain A picture element signal is one-to-one.But in detected environment, when radioactive substance is more or radioactive source activity is high, have Too many ray photons synchronization enters detector.Too strong environment radiographic source so that a large amount of ray reaches detection simultaneously The cathode of device, big plane just will appear Signal averaging, and the different ray photons of these while entrance cannot be distinguished in detector, this The working foundation of the entire detection system of sample is problematic.It is cloudy to correspond to plane for system design assumption, each anode pixels signal One signal of pole, then signal processing is carried out in pairs;When system obtains amplitude and temporal information for follow-up from cathode simultaneously Data processing when, even if there is the signal that anode pixels array provides different location, combine cathode time and amplitude information Afterwards, if only simply according to cathode signal trigger recording time or the signal amplitude of completion, the information that will must be made mistake.
Therefore, the photon how distinguished while reached so that detection system still may be used in the high-radiation field of different stage One of those skilled in the art's urgent problem to be solved is had become to use.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of face pixelated array detector, Radiation detecting system and radiation field detection method, for solving, detector is indistinguishable under high-radiation field in the prior art while arriving The photon reached, the problem of causing result of detection to malfunction.
In order to achieve the above objects and other related objects, the present invention provides a kind of face pixelated array detector, the face battle array Row pixel detector includes at least:
Pel array anode, detection medium and cathode;
The pel array anode is located at the first surface of the detection medium, and the pel array anode includes multiple pictures Plain anode, the photon signal of each pixel anode induction different location;
The detection medium is between the pel array anode and the cathode;
The cathode is located at the second surface of the detection medium, and the cathode includes several cathode electrode blocks, each cathode Electrode block is mutual indepedent, wherein the first surface is oppositely arranged with the second surface.
Preferably, the material of the detection medium is cadmium-zinc-teiluride, germanium, GaAs, mercuric iodixde or thallium bromide.
Preferably, the cathode is divided equally or non-uniformly distributed load is several cathode electrode blocks.
Preferably, the detection medium is cylindrical, prismatic, frustum, terrace with edge, spherical shape or hemispherical.
Preferably, the section of the detection medium is fan-like pattern or trapezoidal.
In order to achieve the above objects and other related objects, the present invention provides a kind of radiation detecting system, the radiation detection System includes at least:
Semiconductor probe device and the data processing correction display dress being connect with the output end of the semiconductor probe device It sets, the semiconductor probe device is for detecting photon signal, and the data processing correcting display device to described for partly leading Body detection device output signal carries out data processing;Wherein, the semiconductor probe device includes:
Above-mentioned face pixelated array detector, the face pixelated array detector are used for the detection of photon signal;
Multichannel power spectrum reads module, connects the face pixelated array detector, reads the face pixelated array respectively and visits Survey the pel array anode in device and the signal on each cathode electrode block;
Data acquisition module connects the multichannel power spectrum and reads module, and module output is read to the multichannel power spectrum Signal be acquired.
Preferably, the photon signal includes X-ray or gamma-rays.
Preferably, the semiconductor probe device is gamma spectrometer, gamma camera or Compton camera.
Preferably, the data processing correcting display device is PC machine.
In order to achieve the above objects and other related objects, the present invention provides a kind of radiation field detection method, the radiation field Detection method includes at least:
S1:According to the signal reading speed and signal analyze speed of detection system, calculate detection system it is attainable when Between resolution capability;
S2:Dead time limit value is set according to the Time resolution ability;
S3:Grade classification is carried out to different radiation fields according to the dead time limit value, according to determining radiation field grade Subregion is carried out to the cathode of detector and is detected;
S4:The cathode of pel array anode and subregion from detector obtains time and amplitude information respectively, to be examined Survey result.
Preferably, the step of temporal resolution for determining detection system includes:
Transit time of the charge generated inside detector, detection system are reacted with detector medium according to ray photons Signal readout time and signal analysis time determine the time resolution.
Preferably, step S3 includes:
Ray photons detection is carried out in radiation field, the ray photons generated in the detection system according to radiation field The superposition calculation dead time is compared based on the dead time being calculated with the preset dead time limit value, is radiated with determining Field grade.
Preferably, radiation field grade is determined before detection by theoretical calculation, according to determining radiation field etc. when detection Grade carries out subregion to the cathode;Step S3 includes:
Step S310:Analog detection system incrementally increases the intensity of radiation field from small to large, and respectively to different radiation The superposition calculation dead time of the ray photons generated in the detection system under intensity, by each dead time being calculated with it is described Dead time limit value compares;
Step S320:If without departing from the dead time limit value, continue Enhanced Radiation Reduced Blast intensity, and return to step S310;If Beyond the dead time limit value, then corresponding radiation intensity is set as next radiation field grade, and further divide the cathode Return to step S310 behind area;Until the corresponding radiation field of radiation intensity needed is graded;
Step S330:The intensity of radiation field to be measured is compared with each radiation field grade, by the radiation field of in-situ measurement It corresponds in corresponding radiation field grade, and carries out the subregion of corresponding number to the cathode according to determining radiation field grade, It is detected after subregion.
Preferably, the corresponding radiation field grade of radiation field to be tested is determined by on-the-spot test, and carries out the cathode Subregion is detected after subregion;Step S3 includes:
Step S311:To the superposition calculation dead time for the ray photons that radiation field to be measured generates in the detection system, By the dead time being calculated compared with the dead time limit value;
Step S321:If without departing from the dead time limit value, detected with the partitioning scenario of current cathode;If exceeding The dead time limit value, then the grade of the radiation field to be measured be set as next stage, to the further subregion of current cathode, and return Step S311.
Preferably, different radiation field grades corresponds to the cathode subregion of different number, and the radiation field grade is corresponding Radiation intensity is bigger, and the subregion of the cathode is more.
Preferably, the testing result includes radionuclide energy, radionuclide type, radionuclide dosages or Radionuclide in the environment there are orientation.
It is replaced it is highly preferred that superposition photon counting limit value can be used in the dead time limit value, ray photons is superimposed Quantity with it is described superposition photon counting limit value compared with realize radiation field grade determination, wherein the dead time limit value with The superposition photon counting limit value is directly proportional.
As described above, the present invention face pixelated array detector, radiation detecting system and radiation field detection method, have with Lower advantageous effect:
Face pixelated array detector, radiation detecting system and the radiation field detection method of the present invention passes through a big plane Cathode, be divided into several planar cathode blocks, the photon to divide while reach respectively enters different cathod systems on cathode, To play the purpose distinguished while reaching photon so that detection system still can be used in the high-radiation field of different stage.
Description of the drawings
Fig. 1 is shown as the schematic side view of CZT semiconductor detectors in the prior art.
Fig. 2 is shown as the schematic top plan view of CZT semiconductor detectors in the prior art.
Fig. 3 is shown as the elevational schematic view of CZT semiconductor detectors in the prior art.
Fig. 4 is shown as the schematic side view of the face pixelated array detector of the present invention.
Fig. 5 is shown as the schematic top plan view of the face pixelated array detector of the present invention.
Fig. 6 is shown as the elevational schematic view of the face pixelated array detector of the present invention.
Fig. 7~Figure 12 is shown as the numerous embodiments of the cathode subregion of the present invention.
Figure 13 is shown as the structural schematic diagram of the radiation detecting system of the present invention.
Figure 14 is shown as the flow diagram of the radiation field detection method of the present invention.
Component label instructions
1 CZT semiconductor detectors
11 anodes
111 pixel anodes
12 crystal detections
13 cathodes
2 face pixelated array detectors
21 pel array anodes
211 pixel anodes
22 detection media
23 cathodes
231 cathode electrode blocks
3 multichannel power spectrums read module
4 data acquisition modules
5 semiconductor probe devices
6 data processing correcting display devices
S1~S3, S310~S330 steps
S311~S321
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this specification below by way of specific specific example Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from Various modifications or alterations are carried out under the spirit of the present invention.
Please refer to Fig. 4~Figure 14.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way The basic conception of invention, package count when only display is with related component in the present invention rather than according to actual implementation in schema then Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can be a kind of random change, and its Assembly layout kenel may also be increasingly complex.
Embodiment one
As shown in figure 4, the present invention provides a kind of face pixelated array detector 2, the face pixelated array detector 2 includes:
Pel array anode 21, detection medium 22 and cathode 23.
As shown in figure 4, the pel array anode 21 is located at the first surface of the detection medium 22, the pel array Anode 21 includes multiple pixel anodes 211, and each pixel anode 211 incudes the photon signal of different location.
Specifically, in the present embodiment, the pel array anode 21 is located at the upper surface of the detection medium 22.Such as figure Shown in 5, in this embodiment, each pixel anode 211 is square structure, arranges to form 4 rows 5 in the surface of the detection medium 22 The array structure of row.In practical applications, the shape of each pixel anode 211 and array scale can be set according to actual needs, no It is limited with the present embodiment.
As shown in figure 4, the detection medium 22 is between the pel array anode 21 and the cathode 23.
Specifically, the material of the detection medium 22 includes but not limited to cadmium-zinc-teiluride (CZT), germanium (Ge), GaAs (GaAs), mercuric iodixde (HgI2) and thallium bromide (TlBr), it is arbitrary to need to handle signal in pairs from anode and cathode to remove crystal The charge that imperfect tape comes is subside, the material of amplitude fluctuation and homogeneity question is suitable for the invention the detection medium 22, It is not enumerated and is limited with the present embodiment.
Specifically, it is described detection medium 22 shape include but not limited to cylindrical, prismatic, frustum, terrace with edge, spherical shape and The section of hemispherical, the detection medium 22 includes but not limited to fan-like pattern and trapezoidal, can be according to the structure in specific detector Specific setting is done in distribution, is not repeated one by one herein.
As shown in figure 4, the cathode 23 is located at the second surface of the detection medium 22, the cathode 22 includes several the moon Pole electrode block 231, each cathode electrode block 231 are mutual indepedent, wherein the first surface is oppositely arranged with the second surface.
Specifically, in the present embodiment, the cathode 23 is located at the lower surface of the detection medium 22.The cathode 23 is equal Divide or non-uniformly distributed load is several cathode electrode blocks 231.As shown in fig. 6, in the present embodiment, the cathode 23 is divided into a left side Right two cathode electrode blocks 231.As other realization methods of the present embodiment, as shown in fig. 7, the cathode 23 is divided into three A cathode electrode block 231;As shown in figure 8, the cathode 23 is divided into four cathode electrode blocks 231;As shown in figure 9, described Cathode 23 is divided into six cathode electrode blocks 231 by non-;As shown in Figure 10, the cathode 23 is divided into five cathode electrodes by non- The area of block 231, each cathode electrode block 231 successively decreases successively from left to right;As shown in figure 11, the cathode 23 is divided into six Cathode electrode block 231;As shown in figure 12, the cathode 23 is divided into multiple cathode electrode blocks 231, is formed in the pixel battle array 21 corresponding array structure of row anode.It does not repeat one by one herein.The shape of each cathode electrode block 231 can be done according to actual needs to be had Body is set, and is not limited to this embodiment.
Embodiment two
As shown in figure 13, the present embodiment provides a kind of radiation detecting system, the radiation detecting system includes:
Semiconductor probe device 5 and the data processing correction display being connect with the output end of the semiconductor probe device 5 Device 6.
As shown in figure 13, the semiconductor probe device 5 is for detecting photon signal.The semiconductor probe device 5 wraps Include face pixelated array detector 2, multichannel power spectrum reads module 3 and data acquisition module 4.
Specifically, the face pixelated array detector 2 is used for the detection of photon signal, concrete structure such as one institute of embodiment It states, does not repeat one by one herein.The photon signal includes but not limited to X-ray and gamma-rays.The face pixelated array detector 2 Output anode picture element signal and cathode pixels signal, including but not limited to amplitude and temporal information.
Specifically, the multichannel power spectrum reads the output end that module 3 connects the face pixelated array detector 2, respectively Read the pel array anode 21 in the face pixelated array detector 2 and the signal on each cathode electrode block 231.
Specifically, the data acquisition module 4 connects the output end that the multichannel power spectrum reads module 3, to described more Channel power spectrum reads the signal that module 3 exports and is acquired.
The cathode pixels signal is single channel signal or multi channel signals, the signal lead-out wire of each cathode electrode block 231 Using potting gum (binning) pattern, multiple cathode electrode blocks 231 are merged when applied to low-inensity radiation field and are exported; When detected environmental radiation is high-radiation field, system judges rule by self, is automatically adjusted to high level radiation field Corresponding cathode subregion number.The signal that each cathode electrode block is read at this time is carried out with respectively corresponding anode pixels signal Matching, and the time of cathode signal and amplitude information are handled for matched corresponding anode pixels signal.
In the present embodiment, charge is in transition process between the signal of cathode divisional electrode is solved by charge share mode In diffusion and charge share problem.
It should be noted that the semiconductor probe device 5 is gamma spectrometer, gamma camera or Compton camera.
As shown in figure 13, the data processing correcting display device 6 is used for 5 output signal of semiconductor probe device Carry out data processing.In the present embodiment, the data processing correcting display device 6 is PC machine.
Embodiment three
As shown in figure 14, the present embodiment provides a kind of radiation field detection methods, in the present embodiment, are based on the face array Pixel detector 2 realizes that the radiation field detection method includes:
Step S1:According to the signal reading speed and signal analyze speed of detection system, calculating detection system can reach Time resolution ability.
Specifically, ray light is calculated according to the detection dielectric thickness of detector, Pixel Dimensions, operating voltage or electrode structure Son and detector medium react the charge of generation, and the migration velocity inside detector and transit time, this time is Detection system should promote the attainable limiting value of speed in various manners.Then according to the anode pixels array of actual detection system Number of pixels, the structure of Electronic data acquisition system Subsequent electronic processing speed and dead time, extrapolates entire detection The reading speed of system.It is directed to the sample rate and signal analyze speed of detection system again, when calculating the analysis of individual signals Between.The attainable Time resolution ability of system is determined with the transit time, the reading speed and the analysis time.Its In, time resolution refers to that can differentiate the minimum interval of two front and back arriving signals.
Step S2:Dead time limit value is set according to the Time resolution ability.
Step S3:Grade classification is carried out to different radiation fields according to the dead time limit value, according to determining radiation field Grade carries out subregion to the cathode of detector and detects.
Specifically, the grade of radiation field can be pre-determined after theoretical calculation, as long as practical switching when measuring is different The pattern of strength grade can test.It can also be on-the-spot test, radiation field intensity grade determined according to dead time situation, Field survey is carried out, and is stored as a standard, is later radiation field testing service.
More specifically, a kind of realization method as the present embodiment, can be determined before detection by theoretical calculation and be radiated Field grade carries out subregion when detection according to determining radiation field grade to the cathode, including:
Step S310:Analog detection system incrementally increases the intensity of radiation field from small to large, and respectively to different radiation The superposition calculation dead time of the ray photons generated in the detection system under intensity, by each dead time being calculated with it is described Dead time limit value compares.
Step S320:If without departing from the dead time limit value, continue Enhanced Radiation Reduced Blast intensity, and return to step S310;If Beyond the dead time limit value, then corresponding radiation intensity is set as next radiation field grade, and further divide the cathode Return to step S310 behind area;Until the corresponding radiation field of radiation intensity needed is graded, with the radiation on this realization theory Field grade determines.
It should be noted that initially the cathode in the detection system is read as a whole, with the radiation The increase of field grade, gradually to the cathode subregion in the detection system, different radiation field grades corresponds to the moon of different number Pole subregion, and the corresponding radiation intensity of the radiation field grade is bigger, the subregion of the cathode is more.
It should be noted that the plane subregion of cathode can increase according to twice every time of quantity, can also increase every time One subregion, or increase by two subregions every time, or increase the subregion of any number every time, it determines according to the complexity of radiation field It is fixed.Cathode plane subregion can be uniform segmentation, can also be non-homogeneous subregion;It can be even number subregion, can also be Odd number subregion is determined according to actual environment radiation field.The area of quantity, subregion per subzone can be according to practical application In need set, do not repeat one by one herein.
Step S330:The intensity of radiation field to be measured is compared with each radiation field grade, radiation field to be measured is corresponded to It radiates in field grade accordingly, and carries out the subregion of corresponding number to the cathode according to determining radiation field grade, after subregion It is detected.
More specifically, another realization method as the present embodiment, can determine radiation field to be tested by on-the-spot test Corresponding radiation field grade, and the subregion of the cathode is carried out, it is detected after subregion, including:
Step S311:To the superposition calculation dead time for the ray photons that radiation field to be measured generates in the detection system, By the dead time being calculated compared with the dead time limit value.
Step S321:If without departing from the dead time limit value, detected with the partitioning scenario of current cathode;If exceeding The dead time limit value, then the grade of the radiation field to be measured be set as next stage, to the further subregion of current cathode, and return Step S311.
It should be noted that initially the cathode in the detection system is read as a whole, according to comparison result, Radiation field grade is gradually increased, and to the cathode subregion in the detection system, until the dead time being calculated is no more than institute Dead time limit value is stated, detection is completed.Different radiation field grades corresponds to the cathode subregion of different number, and the radiation field grade Corresponding radiation intensity is bigger, and the subregion of the cathode is more.
It should be noted that the plane subregion of cathode can increase according to twice every time of quantity, can also increase every time One subregion, or increase by two subregions every time, or increase the subregion of any number every time, it determines according to the complexity of radiation field It is fixed.Cathode plane subregion can be uniform segmentation, can also be non-homogeneous subregion;It can be even number subregion, can also be Odd number subregion is determined according to actual environment radiation field.The area of quantity, subregion per subzone can be according to practical application In need set, do not repeat one by one herein.
S4:The cathode of pel array anode and subregion from detector obtains time and amplitude information respectively, to be examined Survey result.
Specifically, the testing result includes but not limited to radionuclide energy, radionuclide type, radioactive nucleus Plain dosage and radionuclide in the environment there are orientation.
It is replaced it should be noted that superposition photon counting limit value can be used in the dead time limit value, by ray photons Superposition quantity compared with the superposition photon counting limit value to realize the determination of radiation field grade, wherein dead time limit Value is directly proportional to the superposition photon counting limit value, and the dead time limit value is bigger, and the superposition photon counting limit value is bigger, tool Body step does not repeat one by one herein.The other parameters conduct that there is certain relationship with the dead time can be selected in actual use It limits, is not limited to this embodiment.
The present invention uses different cathode divisional electrode structures for the other radiation field of different intensity scale, theoretically provides one The dead time limit value or superposition photon counting limit value of a permission, are on this basis classified different radiation intensity fields.Mould Quasi- calculate is directed to known test system, and the radiation field of varying strength generates Signal averaging degree, caused by meeting inside detector Dead time.When exceeding preset limit value in the dead time, radiation field before this is as a grade.Hereafter it is further added by radiation Field intensity needs the cathode one big plane to be divided into two planar cathodes, the calculating walked in repetition, until two plane the moon When the reading dead time of pole all reaches preset limitation, this radiation field intensity is as another grade.And so on spoke It penetrates field intensity and often increases a grade, cathode plane electrode compartments number is increased by, while calculating the counting of all subregion cathodes Whether the dead time reaches limitation, to determine whether confirmed a radiation field grade again.In this way by way of cathode subregion, carry High CZT detection systems indicate that the numerical ability of test system carries in the application power of high-radiation field, and the number of cathode subregion High multiple.
The mode of big planar cathode electrode piecemeal subregion proposed by the present invention, solve high-radiation field because Signal averaging and To make mistake conclusion the problem of.The photon of cathode plane different location is reached simultaneously, it can be from the cathode electrode block of connection different subregions Read output signal is used for subsequent signal processing, has achieved the purpose that the photon signal of correct differentiation while arrival.Certainly by system I calculates judgement, or is artificially adjusted manually according to the standard of operation manual, realizes high, normal, basic various level of radiation fields flexible Application Mode, improve the application range of detection system and flexible processing capacity;System operators can be allowed not need additionally It is easy directly to use same detection system equipment in the case of configuration, it obtains in the case of different radiation field intensities accurately Measurement result provides most quickly and effectively foundation for the disposition of subsequent environmental treatment.
In conclusion a kind of face pixelated array detector of present invention offer, radiation detecting system and radiation field detection method, Including:Pel array anode, detection medium and cathode;The pel array anode is located at the first surface of the detection medium, The pel array anode includes multiple pixel anodes, the photon signal of each pixel anode induction different location;The detection is situated between Matter is between the pel array anode and the cathode;The cathode is located at the second surface of the detection medium, described Cathode includes several cathode electrode blocks, and each cathode electrode block is mutual indepedent, wherein the first surface and the second surface phase To setting.Face pixelated array detector, radiation detecting system and the radiation field detection method of the present invention passes through a big plane Cathode, be divided into several planar cathode blocks, the photon to divide while reach respectively enters different cathod systems on cathode, To play the purpose distinguished while reaching photon so that detection system still can be used in the high-radiation field of different stage. So the present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as At all equivalent modifications or change, should by the present invention claim be covered.

Claims (17)

1. a kind of face pixelated array detector, which is characterized in that the face pixelated array detector includes at least:
Pel array anode, detection medium and cathode;
The pel array anode is located at the first surface of the detection medium, and the pel array anode includes multiple pixel sun Pole, the photon signal of each pixel anode induction different location;
The detection medium is between the pel array anode and the cathode;
The cathode is located at the second surface of the detection medium, and the cathode includes several cathode electrode blocks, each cathode electrode Block is mutual indepedent, wherein the first surface is oppositely arranged with the second surface.
2. pixelated array detector in face according to claim 1, it is characterised in that:The material of the detection medium is tellurium zinc Cadmium, germanium, GaAs, mercuric iodixde or thallium bromide.
3. pixelated array detector in face according to claim 1, it is characterised in that:The cathode divides equally or non-uniformly distributed load For several cathode electrode blocks.
4. pixelated array detector in face according to claim 1, it is characterised in that:The detection medium is cylindrical, rib Cylindricality, frustum, terrace with edge, spherical shape or hemispherical.
5. pixelated array detector in face according to claim 1, it is characterised in that:The section of the detection medium is covering of the fan Shape is trapezoidal.
6. a kind of radiation detecting system, which is characterized in that the radiation detecting system includes at least:
Semiconductor probe device and the data processing correcting display device being connect with the output end of the semiconductor probe device, institute It states semiconductor probe device and is used for the semiconductor probe for detecting photon signal, the data processing correcting display device Device output signal carries out data processing;Wherein, the semiconductor probe device includes:
Face as claimed in any one of claims 1 to 5, wherein pixelated array detector, the face pixelated array detector are used for photon The detection of signal;
Multichannel power spectrum reads module, connects the face pixelated array detector, reads the face pixelated array detector respectively In pel array anode and the signal on each cathode electrode block;
Data acquisition module connects the multichannel power spectrum and reads module, the letter of module output is read to the multichannel power spectrum It number is acquired.
7. radiation detecting system according to claim 6, it is characterised in that:The photon signal includes that X-ray or γ are penetrated Line.
8. radiation detecting system according to claim 6, it is characterised in that:The semiconductor probe device is gamma spectrums Instrument, gamma camera or Compton camera.
9. radiation detecting system according to claim 6, it is characterised in that:The data processing correcting display device is PC Machine.
10. a kind of radiation field detection method, which is characterized in that the radiation field detection method includes at least:
S1:According to the signal reading speed and signal analyze speed of detection system, the detection system attainable time point is calculated Debate ability;
S2:Dead time limit value is set according to the Time resolution ability;
S3:Grade classification is carried out to different radiation fields according to the dead time limit value, according to determining radiation field grade to visiting The cathode for surveying device carries out subregion and is detected;
S4:The cathode of pel array anode and subregion from detector obtains time and amplitude information respectively, to obtain detection knot Fruit.
11. radiation field detection method according to claim 10, it is characterised in that:Determine the temporal resolution of detection system The step of include:
Reacted with detector medium according to ray photons transit time of the charge generated inside detector, detection system letter Number readout time and signal analysis time determine the time resolution.
12. radiation field detection method according to claim 10, it is characterised in that:Step S3 includes:
Ray photons detection is carried out in radiation field, according to the superposition for the ray photons that radiation field generates in the detection system The dead time is calculated, is compared with the preset dead time limit value based on the dead time being calculated, to determine radiation field etc. Grade.
13. radiation field detection method according to claim 10, it is characterised in that:It is true before detection by theoretical calculation Surely it radiates field grade, subregion is carried out to the cathode according to determining radiation field grade when detection;Step S3 includes:
Step S310:Analog detection system incrementally increases the intensity of radiation field from small to large, and respectively to different radiation intensity Under superposition calculation dead time of ray photons for generating in the detection system, by each dead time being calculated with it is described dead when Between limit value compare;
Step S320:If without departing from the dead time limit value, continue Enhanced Radiation Reduced Blast intensity, and return to step S310;If exceeding Corresponding radiation intensity is then set as next radiation field grade by the dead time limit value, and to the further subregion of the cathode after Return to step S310;Until the corresponding radiation field of radiation intensity needed is graded;
Step S330:The intensity of radiation field to be measured is compared with each radiation field grade, the radiation field of in-situ measurement is corresponded to Into corresponding radiation field grade, and according to determining radiation field grade to the subregion of cathode progress corresponding number, subregion After detected.
14. radiation field detection method according to claim 10, it is characterised in that:Spoke to be tested is determined by on-the-spot test The corresponding radiation field grade in field is penetrated, and carries out the subregion of the cathode, is detected after subregion;Step S3 includes:
Step S311:To the superposition calculation dead time for the ray photons that radiation field to be measured generates in the detection system, will count The obtained dead time is compared with the dead time limit value;
Step S321:If without departing from the dead time limit value, detected with the partitioning scenario of current cathode;If beyond described Dead time limit value, then the grade of the radiation field to be measured be set as next stage, to the further subregion of current cathode, and return to step S311。
15. radiation field detection method according to claim 10, it is characterised in that:Different radiation field grades corresponds to different The cathode subregion of quantity, and the corresponding radiation intensity of the radiation field grade is bigger, the subregion of the cathode is more.
16. radiation field detection method according to claim 10, it is characterised in that:The testing result includes radioactive nucleus Plain energy, radionuclide type, radionuclide dosages or radionuclide in the environment there are orientation.
17. according to the radiation field detection method described in claim 10~16, it is characterised in that:The dead time limit value can be used Superposition photon counting limit value is replaced, by the quantity of ray photons superposition to realize compared with the superposition photon counting limit value Radiate the determination of field grade, wherein the dead time limit value is directly proportional to the superposition photon counting limit value.
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