CN108445260A - A kind of multiband sample irradiation device based on atomic force microscope - Google Patents
A kind of multiband sample irradiation device based on atomic force microscope Download PDFInfo
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- CN108445260A CN108445260A CN201810316260.8A CN201810316260A CN108445260A CN 108445260 A CN108445260 A CN 108445260A CN 201810316260 A CN201810316260 A CN 201810316260A CN 108445260 A CN108445260 A CN 108445260A
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- atomic force
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q30/00—Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
- G01Q30/20—Sample handling devices or methods
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- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a kind of real-time measurement specimen material based on atomic force microscope is in specific band light radiation parameter lower surface power, the device of electricity, magnetic, thermal property.Apparatus system is mainly made of irradiation devices, external light source and optical fiber, wherein irradiation devices are made of shell, point light source, lens, hood, irradiation devices part cooperation atomic force microscope is installed under objective table when use, external light source sends out the incident beam of specific band (ultraviolet, visible light and infrared), light beam conducts the point light source to irradiation devices through optical fiber and is in dotted diffusion upwards, and diverging light is through lens constraint in directional light irradiation material sample surface.The apparatus system independently of atomic force microscope laser system and do not generate interference with it, irradiation wave band is adjusted by using different external light sources or the mode for installing optical filter additional, the real-time detection to the multiple performances index such as sample forces, electricity, magnetic, calorifics is realized by way of changing afm scan probe module and software scenario.Compared with existing test method, the present invention more can accurately reflect the situation of change of material related performance indicators in irradiation process.
Description
Technical field
The invention belongs to material surface pattern and power, electricity, magnetic, thermal property technical field of measurement and test, and in particular to Yi Zhongji
In the multiband sample irradiation device of atomic force microscope.
Background technology
Material irradiates lower surface pattern and its power, electricity, magnetic, thermal property in different-waveband can occur different degrees of change
Become.Specifically, high molecular material is when ultraviolet band (100-400nm) is irradiated, since ultraviolet light wave length energy is more concentrated,
It can make the covalent bond in its molecule segment that fracture occur to reduce material molecule amount, cause material surface to corrode, mechanical property
Decline；Photovoltaic material shows under visible light (400-760nm) radiation parameter due to generating photoelectric effect or photochemical effect
Go out different Electromagnetism Characteristics, such as summarize naturally material magazine (Nature Reviews Materials, 2016,1:
15007) it reports perovskite and has excellent charge-conduction characteristic under visible light exposure；In addition, some researchs such as biology doctor
Learn optics magazine (Journal of biomedical optics, 2000,5 (4):It 383-391) reports wavelength and is more than 760nm
Near infrared band irradiate influence to biological organization material heat-conductive characteristic.
Atomic force microscope can obtain sample by analysis probe tip with the interaction force between detection sample surfaces
Surface topography and basic mechanical characteristic information.In addition, combining extraordinary probe that can also obtain material sample surface electricity, magnetic, calorifics
Equal correlation performance parameters.Compared to scanning electron microscope, there is high-resolution, be applicable in wide, the more Testing index of sample scope etc.
Advantage, the detection and analysis for being suitable for changing correlated performance under specimen material radiation parameter.
Currently, for the research of correlation properties under specimen material radiation parameter, such as RSC Advances periodicals (RSC
Advances 7.1(2017):112-120) and the report of Chinese patent CN102721601A etc., it takes and first irradiates post analysis
Mode.Such methods can not analyze the variation of the surface property index of sample in real time in irradiation process, while can not
Ensure that the sample after irradiation does not occur to change again in preservation and test phase correlated performance, limits the accuracy of analysis.Therefore,
It needs to develop a kind of exposed material sample dress that simultaneously its related performance indicators of real-time testing change in situ in atomic force microscope
It sets.
Invention content
The object of the present invention is to provide a kind of multiband sample irradiation device based on atomic force microscope.
The purpose of the present invention is what is realized in the following way：A kind of real-time measurement sample material based on atomic force microscope
Material includes the following steps in specific band light radiation parameter lower surface power, the method for electricity, magnetic, thermal property：
(1) irradiation devices are installed under atomic force microscope sample stage first, irradiation devices is connected using optical fiber
And external light source；
(2) the primary sample material under no radiation parameter is scanned using atomic force microscope, obtains the material and exists
Without the correlated performance data under radiation parameter；
(3) use specific band external light source generate incident beam, light beam through optical fiber introduce light-irradiating device and with
The form of directional light irradiates sample, uses atomic force microscope to carry out continuous scanning to sample at this time, obtains the wave band spoke
According to the real time data of lower material sample apparent relevance energy；
(4) multiple time points are chosen from real time data, the lower each time point phase of material sample of wave band irradiation is compared in analysis
Close the situation of change of performance；
(5) wave band for changing exposure beam by way of changing external light source or optical filtering, repeats step (3) (4), obtains
The influence to material sample correlated performance is irradiated to ultraviolet, visible light, infrared band；
(6) by way of changing afm scan probe module and software scenario, step (2) (3) is repeated
(4), the real-time detection to the multi-performance index such as sample surface morphology and power, electricity, magnetic, calorifics is realized.
Ultraviolet band (100-400nm), visible is realized by using different optical filter or the mode for replacing external light source
The irradiation of the different-wavebands light beam to specimen material such as optical band (400-760nm), infrared band (760-2500nm).
It is realized to sample surface morphology, bullet by way of changing afm scan probe module and software scenario
The real-time detection of the power, electricity, magnetic, calorifics multi-performance index such as property modulus, material phase, resistance, piezoelectric forces, magnetic force, heat transfer.
The light beam of specific band enters through optical fiber inside light-irradiating device, by the lens forming one in light-irradiating device
The collimated light beam of fixed big small light spot is radiated at the bottom surface of specimen material on atomic force microscope objective table.
The adjusting to measured material surface irradiation spot size is realized by adjusting the focal length of lens.
The present invention has following advantageous effect：
(1) present invention can while irradiation sample using atomic force microscope to the power of material sample, electricity, magnetic, calorifics
Etc. multiple performances index carry out real-time testing, compared with the technology of existing " first irradiate, then test ", real-time testing can more subject to
The situation of change of true reflection material correlated performance in irradiation process, while avoiding because Sample storage and postorder test are led
The resultant error of cause；
(2) present invention realizes the adjusting to irradiating wave band by using the mode for replacing external light source or optical filter, has
The advantage that wavelength band is wide, power adjustable section, flexibility are strong；
(3) incident beam adjusts in the form of directional light through light-irradiating device from bottom irradiation sample, avoids exposure light
Beam has atomic force microscope by oneself the interference of laser detection system；
(4) irradiation hot spot is adjustable, it can be achieved that the effect adjusted to material surface exposure beam power density.
Description of the drawings
Fig. 1 is the device of the invention schematic diagram.
Fig. 2 is the method flow diagram for detecting properties of sample index in real time under specific band radiation parameter using the present invention.
Fig. 3 is the method flow diagram for detecting properties of sample index in real time under different-waveband radiation parameter using the present invention.
Fig. 4 is the method flow for detecting sample different performance index in real time under specific band radiation parameter using the present invention
Figure.
Fig. 5 is that present invention irradiation hot spot adjusts schematic diagram
Specific implementation mode
Embodiment 1：
Polylactic acid film 5 minutes surface topographies and springform quantitative change under the irradiation of 355nm ultraviolet bands is measured in embodiment 1
The method of change, flow is as shown in Fig. 2, specifically comprise the following steps：
(1) as shown in Figure 1, by light-irradiating device 3 by being connected as shown in the figure with atomic force microscope 9, fix 2 ×
2cm polylactic acid films 8 are on microscope carrier 7.External light source 1 sends out 355nm ultraviolet lights, and hair is conducted into through optical fiber 2
Shaven head 4, light beam are in dotted diffusion upwards, are in directional light through the constraint of lens 5；
(2) atomic force microscope is disposed in contact with pattern, continuous scanning is carried out to polylactic acid film using typical probe,
Hood 6 is opened with until starting experiment to irradiation 5 minutes.It is analyzed through software process quality, obtains multiple continuous polylactic acid films
Surface topography and elasticity modulus distribution map；
(3) chosen from obtained data 6 time points such as 0,1,2,3,4,5 minute polylactic acid film surface topography and
Elasticity modulus distribution map, comparative analysis polylactic acid film 5 minutes surface topographies and elasticity modulus under 355nm ultraviolet light irradiations
Consecutive variations situation.
Embodiment 2：
Polylactic acid film 5 minutes surface topographies and bullet under the irradiation of 488nm, 546nm, 800nm wave band are measured in embodiment 2
The method of property modulus change, flow is as shown in figure 3, specifically comprise the following steps：
(1) as shown in Figure 1, by light-irradiating device by being connected as shown in the figure with atomic force microscope, 2 × 2cm is fixed
Polylactic acid film (note A1 groups) is on microscope carrier.Connection visible light external light source and adjust optical filter send out 488nm can
It is light-exposed, it is conducted into light head through optical fiber, light beam is in dotted diffusion upwards, is in directional light through lens constraint；
(2) atomic force microscope is disposed in contact with pattern, continuous scanning is carried out to polylactic acid film using typical probe,
Until irradiation 5 minutes.It is analyzed through software process quality, obtains multiple continuous A1 groups polylactic acid film surface topographies and elasticity modulus
Distribution map；
(3) objective table parallel group polylactic acid film sample (note A2 groups) is replaced, adjustment external light source optical filter makes it send out
546nm visible lights；
(4) atomic force microscope is disposed in contact with pattern, continuous scanning is carried out to polylactic acid film using typical probe,
Hood is opened with until starting experiment to irradiation 5 minutes.It is analyzed through software process quality, it is thin to obtain multiple continuous A2 groups polylactic acid
Environmental microbes and elasticity modulus distribution map；
(5) objective table parallel group polylactic acid film sample (note A3 groups) is replaced, it is close that replacement external light source makes it send out 800nm
Infrared waves；
(6) atomic force microscope is disposed in contact with pattern, continuous scanning is carried out to polylactic acid film using typical probe,
Hood is opened with until starting experiment to irradiation 5 minutes.It is analyzed through software process quality, it is thin to obtain multiple continuous A3 groups polylactic acid
Environmental microbes and elasticity modulus distribution map；
(7) the polylactic acid film surface topography and springform of particular point in time are chosen from obtained A1, A2, A3 group data
Measure distribution map, comparative analysis polylactic acid film 5 minutes surface topographies under tri- kinds of different-waveband irradiation of 488nm, 546nm, 800nm
And the difference of elasticity modulus.
Embodiment 3：
It is real-time that monocrystalline silicon thin film 5 minutes surface topographies, resistance and thermal resistance under the irradiation of 488nm wave bands are measured in embodiment 3
The method of situation of change, flow is as shown in figure 4, specifically comprise the following steps：
(1) as shown in Figure 1, by light-irradiating device by being connected as shown in the figure with atomic force microscope, 2 × 2cm is fixed
Monocrystalline silicon thin film (note B1 groups) is on microscope carrier.Connection visible light external light source and adjust optical filter send out 488nm can
It is light-exposed, it is conducted into light head through optical fiber, light beam is in dotted diffusion upwards, is in directional light through lens constraint；
(2) atomic force microscope is disposed in contact with pattern, continuous scanning is carried out to monocrystalline silicon thin film using typical probe,
Until irradiation 5 minutes.It is analyzed through software process quality, obtains multiple continuous B1 groups monocrystalline silicon thin film surface topographies and elasticity modulus
Distribution map；
(3) objective table parallel group monocrystalline silicon thin film sample (note B2 groups) is replaced；
(4) atomic force microscope is disposed in contact with pattern, monocrystalline silicon thin film is carried out using conducting probe module continuous
Scanning opens hood with until starting experiment to irradiation 5 minutes.It is analyzed through software process quality, it is single to obtain multiple continuous B2 groups
Polycrystal silicon film distribution of resistance figure；
(5) objective table parallel group monocrystalline silicon thin film sample (note B3 groups) is replaced；
(6) atomic force microscope is disposed in contact with pattern, monocrystalline silicon thin film is continuously swept using thermal analysis module
It retouches, opens hood with until starting experiment to irradiation 5 minutes.It is analyzed through software process quality, obtains multiple continuous B3 groups monocrystalline
Silicon film surface thermal resistance distribution map；
(7) chosen from obtained B1, B2, B3 group data the monocrystalline silicon thin film surface topography of particular point in time, resistance and
Thermal resistance distribution map, the difference of comparative analysis monocrystalline silicon thin film 5 minutes surface topographies, resistance and thermal resistance under the irradiation of 488nm wave bands.
Claims (5)
1. a kind of multiband sample irradiation device based on atomic force microscope, it is characterised in that：Described device system includes spoke
According to device, external light source and optical fiber；The irradiation devices are installed below atomic force microscope sample stage, by shell, point
Light source, lens and hood composition, point light source send out light beam and are refracted as directional light for irradiating sample through lens；It is described outer
Portion's light source is installed on by atomic force microscope, is conducted incident beam to irradiation devices by optical fiber, outer by replacing
Portion's light source and the available incident light from the different-wavebands such as ultraviolet, visible light, infrared of use optical filtering, the device may be implemented in spoke
While according to specimen material, sample surface forces associated, electricity, magnetic, thermal property are carried out using atomic force microscope real-time
Test.
2. a kind of multiband sample irradiation device based on atomic force microscope as described in right 1, it is characterised in that combinable
Atomic force microscope carries out real-time testing while exposed material sample to sample forces, electricity, magnetic, thermal property, can be more
The accurately situation of change of reflection material correlated performance in irradiation process.
3. a kind of multiband sample irradiation device based on atomic force microscope as described in right 1, it is characterised in that by more
It changes external light source or realizes ultraviolet band (100-400nm), visible light wave range (400- by the way of different optical filters
760nm) and the irradiation of the different-wavebands light beam to specimen material such as infrared band (760nm-2500nm).
4. a kind of multiband sample irradiation device based on atomic force microscope as described in right 1, it is characterised in that incident light
Beam is adjusted through light-irradiating device, from microscope example bench bottom irradiation sample in the form of directional light, avoids exposure beam pair
Atomic force microscope has the interference of laser detection system by oneself.
5. a kind of multiband sample irradiation device based on atomic force microscope as described in right 1, it is characterised in that pass through tune
Focal length of lens realization is saved to the adjusting of measured material surface irradiation spot size, it can be achieved that close to material surface exposure beam power
Spend the effect of adjustment.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113866079A (en) * | 2021-09-26 | 2021-12-31 | 中国科学院长春应用化学研究所 | Method and device for in-situ detection of ultraviolet aging performance of sample |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0612907U (en) * | 1992-07-15 | 1994-02-18 | オリンパス光学工業株式会社 | Scanning tunneling microscope and its sample stage |
| JPH09159922A (en) * | 1995-12-13 | 1997-06-20 | Kagaku Gijutsu Shinko Jigyodan | Photoirradiation switching method |
| US6559458B2 (en) * | 2000-01-14 | 2003-05-06 | Leica Microsystems Wetzlar Gmbh | Measuring instrument and method for measuring features on a substrate |
| US20070196815A1 (en) * | 2000-08-02 | 2007-08-23 | Jason Lappe | Positive Selection Procedure for Optically Directed Selection of Cells |
| US20070220958A1 (en) * | 2006-03-21 | 2007-09-27 | Veeco Instruments Inc. | Optical detection alignment/tracking method and apparatus |
| WO2009157096A1 (en) * | 2008-06-27 | 2009-12-30 | Nippon Telegraph And Telephone Corporation | Stage for scanning probe microscopy and sample observation method |
| US20100141939A1 (en) * | 2006-06-21 | 2010-06-10 | University Of Dayton | Methods of polarization engineering and their applications |
| WO2012098349A1 (en) * | 2011-01-20 | 2012-07-26 | Swansea University | Lab on a chip device |
| EP2648004A1 (en) * | 2012-04-02 | 2013-10-09 | Cytosurge AG | Touch-screen based scanning probe microscopy (SPM) |
| CN106546771A (en) * | 2015-09-23 | 2017-03-29 | 中国科学院宁波材料技术与工程研究所 | The method that photoelectric conversion material photo-signal is detected using conducting atomic force microscopy |
| CN107860944A (en) * | 2013-03-15 | 2018-03-30 | 布鲁克纳米股份有限公司 | The chemical nanometer of sample is identified using normalization near-field spectrum |
-
2018
- 2018-04-10 CN CN201810316260.8A patent/CN108445260B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0612907U (en) * | 1992-07-15 | 1994-02-18 | オリンパス光学工業株式会社 | Scanning tunneling microscope and its sample stage |
| JPH09159922A (en) * | 1995-12-13 | 1997-06-20 | Kagaku Gijutsu Shinko Jigyodan | Photoirradiation switching method |
| US6559458B2 (en) * | 2000-01-14 | 2003-05-06 | Leica Microsystems Wetzlar Gmbh | Measuring instrument and method for measuring features on a substrate |
| US20070196815A1 (en) * | 2000-08-02 | 2007-08-23 | Jason Lappe | Positive Selection Procedure for Optically Directed Selection of Cells |
| US20070220958A1 (en) * | 2006-03-21 | 2007-09-27 | Veeco Instruments Inc. | Optical detection alignment/tracking method and apparatus |
| US20100141939A1 (en) * | 2006-06-21 | 2010-06-10 | University Of Dayton | Methods of polarization engineering and their applications |
| WO2009157096A1 (en) * | 2008-06-27 | 2009-12-30 | Nippon Telegraph And Telephone Corporation | Stage for scanning probe microscopy and sample observation method |
| US20110099673A1 (en) * | 2008-06-27 | 2011-04-28 | Nippon Telegraph And Telephone Corporation | Stage for scanning probe microscopy and sample observation method |
| WO2012098349A1 (en) * | 2011-01-20 | 2012-07-26 | Swansea University | Lab on a chip device |
| EP2648004A1 (en) * | 2012-04-02 | 2013-10-09 | Cytosurge AG | Touch-screen based scanning probe microscopy (SPM) |
| CN107860944A (en) * | 2013-03-15 | 2018-03-30 | 布鲁克纳米股份有限公司 | The chemical nanometer of sample is identified using normalization near-field spectrum |
| CN106546771A (en) * | 2015-09-23 | 2017-03-29 | 中国科学院宁波材料技术与工程研究所 | The method that photoelectric conversion material photo-signal is detected using conducting atomic force microscopy |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113866079A (en) * | 2021-09-26 | 2021-12-31 | 中国科学院长春应用化学研究所 | Method and device for in-situ detection of ultraviolet aging performance of sample |
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