CN108428989A - A kind of substrate is to substrate broadband interconnection architecture - Google Patents
A kind of substrate is to substrate broadband interconnection architecture Download PDFInfo
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- CN108428989A CN108428989A CN201810269189.2A CN201810269189A CN108428989A CN 108428989 A CN108428989 A CN 108428989A CN 201810269189 A CN201810269189 A CN 201810269189A CN 108428989 A CN108428989 A CN 108428989A
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- Prior art keywords
- substrate
- line
- open
- defect ground
- ground structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
Abstract
The invention discloses a kind of substrates to substrate broadband interconnection architecture, including first substrate and the second substrate that side on the first substrate is arranged, it is provided with the first microstrip line and first port on the first substrate, the second microstrip line and second port are provided on second substrate, first port is connected with second port by gold wire bonding line, broadband interconnection architecture further includes the first open-circuit line being arranged on the first substrate and the second open-circuit line being arranged on second substrate, first open-circuit line is connect with first port, and the second open-circuit line is connect with second port；The first defect ground structure is offered at corresponding position on first substrate immediately below first open-circuit line, the characteristic impedance for improving the first microstrip line；The second defect ground structure is offered at corresponding position on first substrate immediately below second open-circuit line, the characteristic impedance for improving the second microstrip line, the first defect ground structure and the second defect ground structure are not communicated with setting；Overall structure of the present invention is simple, improves the characteristic impedance of microstrip line.
Description
Technical field
The present invention relates to Electronic Structure Design field more particularly to a kind of substrates to substrate broadband interconnection architecture.
Background technology
Interconnection architecture is applied in monolithic integrated microwave circuit and multi-chip module, between the substrate for realizing different height
Then signal transmission is realized as shown in fig. 6, one piece of substrate is added on another piece of substrate by the connection of gold wire bonding line
Interconnection between substrate, but interconnection is asked questions there are following between traditional substrate：First, use more gold wire bonding lines and compensation
Micro-strip open-circuit line can be effectively increased the bandwidth of interconnection architecture, but frequency can not be more than 20 GHz；Second, for widening spun gold
Minimum widith needed for the compensation open-circuit line of bonding line interconnection architecture bandwidth is less than 0.1 mm, this width is in existing printed circuit board
It is difficult to realize in the process with low-temperature co-fired ceramics manufacture craft.
Meanwhile under many practical situations, to make signal preferably transmit, need to use multiple substrates, it is such as following
Two kinds of situations：First, in order to which signal preferably transmits, the necessary high degree of isolation in local oscillator part of transmitter, receiver and transceiver,
Therefore, the leakage that this three parts just needs to design individual circuit substrate that signal is avoided to generate by common base, especially
High-power local oscillator leakage；Second, under many actual conditions, it can not achieve and place all first devices in one piece of circuit board
Part, so, in complicated circuit, they can only be placed in different circuit boards.
Invention content
It is mutual to substrate broadband it is an object of the invention to for the technical problems in the prior art, provide a kind of substrate
It is coupled structure, specific technical solution is as follows：
A kind of substrate is to substrate broadband interconnection architecture, including first substrate and the second base that the side on the first substrate is arranged
Plate is provided with the first microstrip line and first port on the first substrate, and the second micro-strip is provided on the second substrate
Line and second port, the first port and second port are connected by gold wire bonding line, and the broadband interconnection architecture further includes
The second open-circuit line that the first open-circuit line on the first substrate is set and is arranged on second substrate, first open-circuit line just under
The first defect ground structure is offered on square first substrate at corresponding position, the characteristic impedance for improving the first microstrip line；Institute
It states and offers the second defect ground structure at corresponding position on first substrate immediately below the second open-circuit line, for improving the second micro-strip
The characteristic impedance of line, first defect ground structure and second defect ground structure are not communicated with setting.
Further improvement of the present invention is：The side that first defect ground structure and the second defect ground structure pass through etching
Formula is formed.
Further improvement of the present invention is：In the broadband interconnection architecture, the gold wire bonding line is equivalent to one
Inductor.
Further improvement of the present invention is：In the broadband interconnection architecture, first open-circuit line and the second open circuit
Line is equivalent to capacitor.
Further improvement of the present invention is：The gold wire bonding line, the first defect ground structure and the second defect ground structure
Between connection can be equivalent to the lowpass structures being made of three elements, wherein the lowpass structures include two capacitors
With an inductor.
Substrate proposed by the present invention passes through the first open-circuit line underface on the first substrate to substrate broadband interconnection architecture
Corresponding position opens up the first defect ground structure, and corresponding position opens up second immediately below the second open-circuit line on the first substrate
Defect ground structure improves microstrip line feature on first substrate and second substrate to reach under conditions of keeping micro belt line width
The effect of impedance；Meanwhile the be arranged on the first microstrip line and second substrate of first substrate by the connection of gold wire bonding line
Two microstrip lines；Compared with the prior art, the advantages of the present invention are as follows：Overall structure is simple, and the process of preparation is simple, simultaneously
The bandwidth of operation for expanding microstrip line, improves characteristic impedance, has broken the limitation of the split road widths of manufacturing process.
Description of the drawings
Fig. 1 is the vertical view and side view of the broadband interconnection architecture of defect ground structure of the present invention；
Fig. 2 is the equivalent circuit diagram signal of the present invention；
Fig. 3 is that the present invention is based on the microstrip lines of defect ground structure and corresponding simplified electrical circuit diagram to illustrate；
Fig. 4 is the characteristic impedance schematic diagram of the microstrip line of defect ground structure of the present invention；
Fig. 5 is the S parameter instrumentation plan of the broadband interconnection architecture of defect ground structure of the present invention；
Fig. 6 illustrates for broadband interconnection architecture in the prior art.
Indicate explanation：1- first substrates, 11- first ports, the first open-circuit lines of 12-, the first defect ground structures of 13-, 14-
One microstrip line, 2- second substrates, 21- second ports, the second open-circuit lines of 22-, the second defect ground structures of 23-, the second micro-strips of 24-
Line, 3- gold wire bonding lines.
Specific implementation mode
In order to enable those skilled in the art to better understand the solution of the present invention, below in conjunction in the embodiment of the present invention
Attached drawing, technical scheme in the embodiment of the invention is clearly and completely described.Obviously, described embodiment is only
A part of the embodiment of the present invention gives presently preferred embodiments of the present invention instead of all the embodiments in attached drawing.The present invention can
To realize in many different forms, however it is not limited to embodiment described herein, on the contrary, provide the mesh of these embodiments
Be to make the disclosure of the present invention more thorough and comprehensive.Based on the embodiments of the present invention, the common skill in this field
The every other embodiment that art personnel are obtained without creative efforts belongs to the model that the present invention protects
It encloses.
Refering to fig. 1, in embodiments of the present invention, a kind of substrate is provided to substrate broadband interconnection architecture, and the broadband is mutual
It includes first substrate and the second substrate 2 that side on first substrate 1 is arranged to be coupled structure, is provided with first on first substrate 1
Microstrip line 14 and first port 11 are provided with the second microstrip line 24 and second port 21,11 He of first port on second substrate 2
Second port 21 is connected by gold wire bonding line 3, and broadband interconnection architecture further includes the first open-circuit line of setting on first substrate 1
12 and setting the second open-circuit line 22 on second substrate 2, on 12 underface first substrate of the first open-circuit line at 1 corresponding position
The first defect ground structure 13 is offered, the characteristic impedance for improving the first microstrip line 14；First immediately below second open-circuit line 22
The second defect ground structure 23 is offered on substrate 1 at corresponding position, the characteristic impedance for improving the second microstrip line 24, first
Defect ground structure 13 and the second defect ground structure 23 are not communicated with setting；Wherein, it ties to the first defect ground structure 13 and the second defect
Structure 23 is formed by way of etching.
In conjunction with Fig. 2, in embodiments of the present invention, in the broadband interconnection architecture, gold wire bonding line 3 is equivalent to an electricity
Sensor, the first open-circuit line 12 and the second open-circuit line 22 are equivalent to capacitor；Gold wire bonding line 3, the first open-circuit line 12 and second are opened
Connection can be equivalent to the lowpass structures being made of three elements between route 22, wherein lowpass structures include two capacitances
Device and an inductor, i.e. lowpass structures are the circuit structure of one (C1-L-C2)；In embodiment, broadband of the invention is mutual
It is coupled structure by opening up defect ground structure on 1 corresponding position of first substrate, the first open-circuit line 12 and second open circuit can be increased
Width between line 22, and distance is not limited in traditional interconnection architecture between the first open-circuit line and the second open-circuit line in 0.1mm
In range, for example it can be 0.5mm's；Same effect, width between the first microstrip line 14 and the second microstrip line 24 also phase
It should be increased.
In the present invention, the microstrip line that can be 0.04mm by width is relative dielectric constant is 3.38, thickness is
Microstrip line is etched on the Rogers 4003C substrates of 0.508mm, the thickness of microstrip line is made to be less than 0.1mm to get thick to 0.6mm
The substrate being made of defect ground structure is to substrate width interconnection architecture, and it is that 250 Ω substrates are wide to substrate to obtain characteristic impedance
Interconnection architecture is spent, illustrates provided by the invention using the substrate of gold wire bonding line and defect ground structure to substrate width to be mutually coupled
The preparation process of structure can make interconnection architecture reach expected characteristic impedance while keeping original micro belt line width.
Preferably, the thickness of first substrate 1 is 0.5mm in the present invention, and the thickness of second substrate 2 is 0.2mm, certainly, this
Invention is limited and is fixed not to this, can be selected according to actual requirement.
Refering to Fig. 3, in real name embodiment, figure is microstrip line and corresponding circuit based on defect ground structure
Structure chart, it follows that formula can be passed through by offering the impedance Z of the open-circuit line of defect ground structure：
,, acquire, wherein θ=pi/2, at this point, reflectance factor Γ in reach maximum；In conjunction with Fig. 4, it is illustrated that big in 0 ~ 38GHz for the present invention
In small operating frequency range, curve graph that defect ground structure characteristic impedance changes with defect ground structure length and frequency, it is known that,
When defect ground structure length is 3mm, and frequency size is 16GHz, the characteristic impedance of defect ground structure reaches 250 Ω of maximum；
In the present embodiment, the width of the excellent long a=3mm for taking defect ground structure, length b=3.6mm of open-circuit line, open-circuit line are c=0.6mm,
Open-circuit line horizontal distance g=0.5mm on first substrate 1 and second substrate 2, it is W that width is opened up on first substrate 1 and second substrate 2
The port of=1.2mm, meanwhile, the condenser capacitance size that the excellent defect ground structure taken on first substrate 1 and second substrate 2 is formed
For C1=C2=0.15pf, the inductance size that gold wire bonding line 3 is formed is L=0.26nH, at this point, what is formed uses gold wire bonding line
Have the effect of to substrate broadband interconnection architecture with the substrate of defect ground structure best, characteristic impedance reaches maximum.
In conjunction with Fig. 5 and Fig. 6, Fig. 5 is the S parameter emulation testing of interconnection architecture of the present invention, it can be seen that, interconnection of the invention
Structure measurement result is consistent with simulation result, and parameter respectively obtains a degree of optimization；Fig. 6 is mutually to be coupled in the prior art
The structure composition schematic diagram of structure measures emulation to interconnection architecture in the present invention and traditional interconnection architecture, obtains in the present invention
The bandwidth of interconnection architecture is 38GHz, and the bandwidth of traditional interconnection architecture is 2.837GHz, i.e., the bandwidth of interconnection architecture of the present invention increases
12 times, so to substrate broadband interconnection architecture there is good bandwidth to increase effect by using the substrate of defect ground structure,
Maintain the physical width of original interconnection architecture.
Substrate proposed by the present invention passes through the first open-circuit line underface on the first substrate to substrate broadband interconnection architecture
Corresponding position opens up the first defect ground structure, and corresponding position opens up second immediately below the second open-circuit line on the first substrate
Defect ground structure improves microstrip line feature on first substrate and second substrate to reach under conditions of keeping micro belt line width
The effect of impedance；Meanwhile the be arranged on the first microstrip line and second substrate of first substrate by the connection of gold wire bonding line
Two microstrip lines；Compared with the prior art, the advantages of the present invention are as follows：Overall structure is simple, and the process of preparation is simple, simultaneously
The bandwidth of operation for expanding microstrip line, improves characteristic impedance.
The foregoing is merely a prefered embodiment of the invention, the scope of the claims of the present invention is not intended to limit, although with reference to aforementioned reality
Applying example, invention is explained in detail, for a person skilled in the art, still can be to aforementioned each specific
Technical solution recorded in embodiment is modified, or carries out equivalence replacement to which part technical characteristic.Every utilization
The equivalent structure that description of the invention and accompanying drawing content are done directly or indirectly is used in other related technical areas, together
Reason is within scope of patent protection of the present invention.
Claims (5)
1. a kind of substrate is to substrate broadband interconnection architecture, including first substrate and it is arranged second of the side on the first substrate
Substrate is provided with the first microstrip line and first port on the first substrate, and it is micro- to be provided with second on the second substrate
Band line and second port, the first port are connected with second port by gold wire bonding line, it is characterised in that：The broadband is mutual
It further includes setting the first open-circuit line on the first substrate and the second open-circuit line for being arranged on second substrate to be coupled structure, and described the
One open-circuit line is connect with the first port, and second open-circuit line is connect with the second port；Wherein, first open circuit
The first defect ground structure is offered at corresponding position on first substrate immediately below line, the feature resistance for improving the first microstrip line
It is anti-；The second defect ground structure is offered at corresponding position on first substrate immediately below second open-circuit line, for improving the
The characteristic impedance of two microstrip lines, first defect ground structure and second defect ground structure are not communicated with setting.
2. a kind of substrate according to claim 1 is to substrate broadband interconnection architecture, which is characterized in that first defect
Structure and the second defect ground structure are formed by way of etching.
3. a kind of substrate according to claim 1 is to substrate broadband interconnection architecture, which is characterized in that interconnected in the broadband
In structure, the gold wire bonding line is equivalent to an inductor.
4. a kind of substrate according to claim 3 is to substrate broadband interconnection architecture, which is characterized in that interconnected in the broadband
In structure, first open-circuit line and the second open-circuit line are equivalent to capacitor.
5. a kind of substrate according to claim 3 is to substrate broadband interconnection architecture, which is characterized in that the gold wire bonding
Connection can be equivalent to a low pass knot being made of three elements between line, the first defect ground structure and the second defect ground structure
Structure, wherein the lowpass structures include two capacitors and an inductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810269189.2A CN108428989A (en) | 2018-03-29 | 2018-03-29 | A kind of substrate is to substrate broadband interconnection architecture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810269189.2A CN108428989A (en) | 2018-03-29 | 2018-03-29 | A kind of substrate is to substrate broadband interconnection architecture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108428989A true CN108428989A (en) | 2018-08-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810269189.2A Pending CN108428989A (en) | 2018-03-29 | 2018-03-29 | A kind of substrate is to substrate broadband interconnection architecture |
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| CN (1) | CN108428989A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115173010A (en) * | 2022-05-25 | 2022-10-11 | 北京无线电测量研究所 | Microwave transmission device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203039108U (en) * | 2013-01-16 | 2013-07-03 | 东莞理工学院 | Broadband UHF printing dipole antenna |
-
2018
- 2018-03-29 CN CN201810269189.2A patent/CN108428989A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203039108U (en) * | 2013-01-16 | 2013-07-03 | 东莞理工学院 | Broadband UHF printing dipole antenna |
Non-Patent Citations (1)
| Title |
|---|
| BO ZHOU等: "Broadband Substrate to Substrate Interconnection", 《PROGRESS IN ELECTROMAGNETICS RESEARCH C》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115173010A (en) * | 2022-05-25 | 2022-10-11 | 北京无线电测量研究所 | Microwave transmission device |
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Address after: 226000 No. 33 Xinkang Road, Gangzhao District, Nantong City, Jiangsu Province Applicant after: Nanjing Post & Telecommunication Univ. Applicant after: Nanjing University of Posts and Telecommunications Nantong Institute Limited Address before: 210023 Jiangsu city of Nanjing province Ya Dong new Yuen Road No. 9 Applicant before: Nanjing Post & Telecommunication Univ. Applicant before: Nanjing University of Posts and Telecommunications Nantong Institute Limited |
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180821 |