CN108400780A - Has the power semiconductor driving element apparatus and system of data acquisition function - Google Patents
Has the power semiconductor driving element apparatus and system of data acquisition function Download PDFInfo
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- CN108400780A CN108400780A CN201710069258.0A CN201710069258A CN108400780A CN 108400780 A CN108400780 A CN 108400780A CN 201710069258 A CN201710069258 A CN 201710069258A CN 108400780 A CN108400780 A CN 108400780A
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- power semiconductor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
Abstract
The invention discloses a kind of power semiconductor driving device and system having data acquisition function, data acquisition unit obtains the power semiconductor status information for coming from external detection plate acquisition under control unit control.The collected power semiconductor status information of data acquisition unit is sent to external collection plate by control unit.Control unit receives the pulse signal for coming from external pulse plate by pulsed signal and failure feedback unit, and drive signal is sent to external power semiconductor by driving unit again after handling pulse signal.Power semiconductor fault-signal is sent to pulse plate by control unit by pulsed signal and failure feedback unit.The present invention can solve existing driving device and system intelligent degree is low, only have conventional driving and defencive function, cannot be acquired to power semiconductor running state data, the technical issues of real-time Communication for Power can not be carried out with host computer and exchanges data.
Description
Technical field
The present invention relates to power semiconductor technologies fields, more particularly, to a kind of intelligent work(having data acquisition function
Rate semiconductor devices driving device and system.
Background technology
As a kind of widely used power semiconductor, from the IGBT eighties in last century（Insulated Gate
Bipolar Transistor, insulated gate bipolar transistor）Since appearance, just with its high switching speed, low saturation voltage drop, big
Numerous superiority such as current carrying capacity, replaces GTO quickly（Gate Turn-Off Thyristor, gate electrode capable of switching off crystalline substance lock
The abbreviation of pipe）, become the core devices in the fields such as rail traffic, industrial transmission, new energy.With IGBT power densities, switch
Speed, voltage class are constantly promoted and development, the development of IGBT application technologies are also maked rapid progress.
The core of IGBT application technologies, that is, IGBT actuation techniques, we define traditional IGBT drivers and are：With logic
The circuit framework of circuit, isolation circuit, power amplification circuit, fault detection circuit and protection circuit composition.Currently, traditional
IGBT driver generally use discrete devices or the higher ASIC of integrated level（Application Specific Integrated
Circuit, the abbreviation of application-specific integrated circuit）Chip has more in fields such as railway, industry, wind-powered electricity generation, photovoltaic, electric vehicles
It is widely applied.With the extension of number of applications and field, the number of faults of converter module also gradually increases, and then IGBT drives
The quality and reliability of dynamic device becomes the key of application technology.Therefore, engineer needs a large amount of IGBT fault datas, is IGBT
Update provide data supporting.But traditional IGBT drivers do not have data acquisition function, and event occurs in converter module
After barrier, effective fault data can not be provided.Therefore, the IGBT drivers that exploitation has data acquisition function have become power
Semiconductor devices, the especially key of IGBT application developments.
It is isolation that the power semiconductor driving circuit of mainstream, which still uses traditional driving structure, circuit topology, both at home and abroad at present
Power supply, the mode for recommending amplification.Signal isolation mainly has pulse transformer isolation, Fiber isolation and light-coupled isolation, Preservation tactics
Short circuit is predominantly realized by diode or resistance detection IGBT tube voltage drops（Overcurrent）Protection, active clamp and soft switching technology are used
The overvoltage caused by inhibiting larger di/dt.In addition, section driving circuit has Miller clamping structure, for inhibiting larger dv/
IGBT misleads caused by dt.
Existing traditional power semiconductor driver generally only has conventional driving and defencive function, cannot be to power
The running state data of semiconductor devices is acquired, and real-time Communication for Power can not be carried out with host computer to exchange data.In addition, one
The driver based on CPLD devices that a little driving companies release also is only the power semiconductor drive for realizing Digital Programmable
It is dynamic, do not have the intelligent driving function in complete meaning.With intelligent and the big data epoch arriving, power semiconductor
Chip and encapsulation are continuously updated the replacement, and traditional actuation techniques cannot meet current application demand completely.Therefore, it opens
It sends out a kind of and having intelligent power semiconductor driving device and the system of the functions such as programmable and data monitoring, protection as current
Technical problem urgently to be resolved hurrily.
Invention content
In view of this, the purpose of the present invention is to provide a kind of power semiconductor drivings having data acquisition function
Device, the existing traditional IGBT drivers intelligence degree of solution is low, only has conventional driving and defencive function, cannot be right
IGBT running state datas are acquired, can not with host computer carry out real-time communication switching data the technical issues of.
In order to achieve the above-mentioned object of the invention, the present invention specifically provides a kind of power semiconductor having data acquisition function
The technic relization scheme of device drive device, a kind of power semiconductor driving device having data acquisition function, including：
Control unit, data acquisition unit, pulsed signal and the failure feedback unit and driving being arranged in driving plate are single
Member, described control unit respectively with the data acquisition unit, pulsed signal and failure feedback unit, driving unit phase
Even.
The data acquisition unit obtains the work(for coming from external detection plate acquisition under the control of described control unit
The status information of rate semiconductor devices；
The status information of the collected power semiconductor of the data acquisition unit is sent to by described control unit
External collection plate；
Described control unit receives the arteries and veins for coming from external pulse plate by the pulsed signal and failure feedback unit
Signal is rushed, driving letter is sent to external power semiconductor by the driving unit again after handling pulse signal
Number；
Described control unit is by the pulsed signal and failure feedback unit by the failure of the power semiconductor
Signal is sent to the pulse plate.
Preferably, detection circuit is still further comprised in the driving unit, the detection circuit obtains the power half
The fault-signal of conductor device, and the fault-signal is sent to described control unit.
Preferably, the power semiconductor driving device further include for described control unit, data acquisition unit and
Driving unit provides the power supply unit of power supply.
Preferably, the power supply unit further comprises isolating transformer, the first BUCK circuits, the 2nd BUCK circuits,
Three BUCK circuits, low-pressure linear voltage-stablizer, boosting charge pump and reversed charge pump.Power supply in the driving plate by it is described every
Secondary side winding from transformer exports DC ± 15V power supplys, and DC-15V power supplys are powered for the driving unit, all the way DC+15V power supplys
DC+30V power supplys are provided for the detection circuit in the driving unit through the boosting charge pump, another way DC+15V power supplys are through institute
It is DC+5V power supplys to state the first BUCK circuit conversions.DC+5V power supplys provide DC through the 2nd BUCK circuits for described control unit
+ 3.3V power supplys, DC+5V power supplys provide DC+1.2V power supplys, DC+5V power supplys through the 3rd BUCK circuits for described control unit
DC+2.5V power supplys are provided for the data acquisition unit through the low-pressure linear voltage-stablizer, DC+5V power supplys are through the reversed charge
Pump provides DC-2.5V power supplys for the data acquisition unit.
Preferably, the driving unit further comprises signal processing circuit, PMOS and NMOS.It is defeated by described control unit
The pwm pulse signal gone out is after the signal processing circuit carries out level conversion and signal enhanced processing, then exports to by described
The power semiconductor driving unit that PMOS and NMOS is constituted drives the power semiconductor realization to be switched on or off.
Preferably, for the data acquisition unit also under the control of described control unit, acquisition comes from the driving plate
Internal temperature information.
Preferably, data acquisition unit acquisition is by signal condition unit treated the power semiconductor
Gate pole emitter voltage, collector emitter voltage and saturation conduction pressure drop.Described control unit passes through I2C bus monitorings institute
State the temperature information of data acquisition unit acquisition come from inside the driving plate.
Preferably, it is connected by optical fiber between the driving plate and the collection plate, pulse plate, described control unit is logical
It crosses optical fiber transmission and 16 Bits Serial data frames is sent to the collection plate, the maximum baud rate of optical fiber transmission is 37.5Mbps.Institute
State each 8 of gate pole emitter voltage, the collector emitter voltage that 16 Bits Serial data frames include the power semiconductor
Data.
Preferably, described control unit is realized based on FPGA, and the power semiconductor is IGBT.
Preferably, the driving plate drives two power semiconductors simultaneously.
In addition the present invention also specifically provides a kind of power semiconductor drive system having data acquisition function
Technic relization scheme, a kind of power semiconductor drive system having data acquisition function, including：Driving as described above
Plate, and the collection plate, pulse plate and the detection plate that are connected with the driving plate.The subordinate of the driving plate connect the detection plate and
Power semiconductor, the driving plate transmit the status information of the collected power semiconductor of the detection plate
To the collection plate.The higher level of the driving plate connects the collection plate, pulse plate, and the driving plate receives under the pulse plate
The pwm pulse signal of hair, and provided for the power semiconductor according to the pwm pulse signal and be switched on or off driving letter
Number.The driving plate obtains the fault-signal of the power semiconductor, the drive by the detection circuit in driving unit
Movable plate feeds back the fault-signal of the power semiconductor to the pulse plate simultaneously.
Preferably, the fault-signal of the power semiconductor received is sent to the acquisition by the pulse plate
Plate.
By the skill for implementing the power semiconductor driving device for having data acquisition function that aforementioned present invention provides
Art scheme, has the advantages that：
（1）The present invention had not only inherited the stability and reliability of conventional power semiconductors device drive device, but also had and adopt in real time
Collect power semiconductor status data information, and the function of fault moment data is communicated and stored with host computer, it can be in work(
Fault waveform can be restored after rate semiconductor devices fail, be life prediction and the increased quality design of power semiconductor
Provide reliable data supporting；
（2）The present invention is carried out using FPGA at pulse and relay protective scheme relative to traditional power semiconductor driving device
Reason, operating voltage are reduced to DC+3.3V, the power consumption of driving device to be greatly reduced by DC+15V；
（3）Power semiconductor driving device of the present invention is using FPGA processing pulses and realizes relay protective scheme so that driving plate
With programmable features, parameter configuration can be driven by changing software realization, can effectively simplify task amount, shorten hardware development
Period；
（4）Power semiconductor driving device of the present invention has programmable features, can be received concurrently or sequentially by programming
The pulse signal of format substantially increases the applicability of driving device to adapt to different system requirements.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described.It should be evident that the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
Other embodiments are obtained according to these attached drawings.
Fig. 1 is a kind of specific implementation mode of power semiconductor drive system that the present invention has data acquisition function
Structure composition block diagram；
Fig. 2 is the knot for the power semiconductor drive system another kind specific implementation mode that the present invention has data acquisition function
Structure composition frame chart；
Fig. 3 is a kind of structure of specific implementation mode of power semiconductor driving device that the present invention has data acquisition function
Composition frame chart；
Fig. 4 is the knot for the power semiconductor driving device another kind specific implementation mode that the present invention has data acquisition function
Structure composition frame chart；
Fig. 5 is power supply in the power semiconductor driving device a kind of specific implementation mode of the invention for having data acquisition function
The structure composition block diagram of unit；
Fig. 6 is driven in the power semiconductor driving device a kind of specific implementation mode of the invention for having data acquisition function
The structure composition block diagram of unit；
Fig. 7 is data in the power semiconductor driving device a kind of specific implementation mode of the invention for having data acquisition function
The attachment structure schematic diagram of collecting unit；
Fig. 8 be the present invention have a kind of specific implementation mode of power semiconductor driving device of data acquisition function with it is upper
The attachment structure schematic diagram of machine；
In figure：1- driving plates, 2- collection plates, 3- pulse plates, 4- detection plates, 5- power semiconductors, 6- host computers, 11- controls
Unit processed, 12- data acquisition units, 13- pulsed signals and failure feedback unit, 14- driving units, 15- power supply units,
16- signal condition units, the first detection plates of 41-, the second detection plates of 42-, the first control units of 111-, 112- second control list
Member, the first data acquisition units of 121-, the second data acquisition units of 122-, the first pulsed signals of 131- and failure feedback
Member, the second pulsed signals of 132- and failure feedback unit, the first driving units of 141-, the second driving units of 142-, 143-
Signal processing circuit, 144-PMOS, 145-NMOS, 151- isolating transformers, the first BUCK circuits of 152-, 153- the 2nd BUCK electricity
Road, the 3rd BUCK circuits of 154-, 155- low-pressure linear voltage-stablizers, 156- boosting charge pumps, 157- reversed charges pump.
Specific implementation mode
For the sake of quoting and understanding, by the technical term hereinafter used, writes a Chinese character in simplified form or abridge and be described below：
IGBT：Insulated Gate Bipolar Transistor, insulated gate bipolar transistor；
GTO：Gate Turn-Off Thyristor, the abbreviation of gate level turn-off thyristor；
FPGA：Field Programmable Gate Array, field programmable gate array；
PWM：Pulse Width Modulation, pulse modulation technology；
ADC：Analog to Digital Convert, analogue-to-digital converters；
BUCK：Voltage-dropping type DC（Direct current）-DC（Direct current）The abbreviation of converter；
LDO：Low Dropout Regulator, the abbreviation of low pressure difference linear voltage regulator；
MOSFET：Metal-Oxide-Semiconductor Field-Effect Transistor, metal-oxide are partly led
The abbreviation of body field-effect transistor；
PMOS：Positive channel Metal Oxide Semiconductor, p-type metal-oxide-semiconductor field effect t；
NMOS：Negative channel Metal Oxide Semiconductor, N-type metal-oxide-semiconductor field effect t.
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical solution in the embodiment of the present invention carries out clear, complete description.Obviously, described embodiment is only
Only it is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, the common skill in this field
All other embodiment that art personnel are obtained without creative efforts belongs to the model that the present invention protects
It encloses.
As shown in attached drawing 1 to attached drawing 8, the present invention power semiconductor driving dress for having data acquisition function is given
It sets and the specific embodiment of system, the invention will be further described in the following with reference to the drawings and specific embodiments.
In following embodiment 1-3, power semiconductor 5 is introduced by taking IGBT as an example, power semiconductor device
Part 5 can also be other power semiconductors besides igbt.
Embodiment 1
As shown in Fig. 1, a kind of specific embodiment for the power semiconductor drive system having data acquisition function, packet
It includes：Driving plate 1, and the collection plate 2, pulse plate 3 and the detection plate 4 that are connected with driving plate 1.The subordinate of driving plate 1 passes through electrical connection
Mode connecting detection plate 4 and power semiconductor 5, driving plate 1 is by the shape of 4 collected power semiconductor 5 of detection plate
State information is sent to collection plate 2.The higher level of driving plate 1 connects collection plate 2, pulse plate 3, and driving plate 1 receives what pulse plate 3 issued
Pwm pulse signal, and provided for power semiconductor 5 according to the pwm pulse signal and be switched on or off drive signal（For
It is gate electrode drive signals for IGBT）.Detection circuit is still further comprised in driving plate 1, driving plate 1 passes through driving unit 14
In detection circuit obtain the fault-signal of power semiconductor 5, driving plate 1 is simultaneously to 3 feedback power semiconductor of pulse plate
The fault-signal of device 5.The fault-signal of the power semiconductor 5 received is sent to collection plate 2 by pulse plate 3.
What the embodiment of the present invention 1 described has the power semiconductor drive system of data acquisition function based on maturation
Power semiconductor（IGBT）Drive system framework can reliably control power half using completely new driving and protection circuit structure
The switch of conductor device 5, and carry out effective protection.Simultaneously, moreover it is possible to the running state data of power semiconductor 5 be carried out real
When acquire, and be uploaded to collection plate 2 and recorded and stored, to realize the reduction of fault data waveform.
Embodiment 2
As shown in Fig. 3, a kind of specific embodiment for the power semiconductor driving device having data acquisition function, has
Realization main circuit is isolated with control unit, is handled pwm pulse signal, to the switching signal of power semiconductor 5
Power amplification and driving are carried out, and the functions such as reliably protecting are carried out to power semiconductor 5.Power semiconductor driving dress
It sets and specifically includes：
The control unit 11, data acquisition unit 12, pulsed signal and the failure feedback unit 13 that are arranged in driving plate 1 and
Driving unit 14.Control unit 11 is single with data acquisition unit 12, pulsed signal and failure feedback unit 13, driving respectively
Member 14 is connected.
Data acquisition unit 12 under control of the control unit 11, obtains and comes from the power that external detection plate 4 acquires
The status information of semiconductor devices 5.
Control unit 11 leads to the status information of 12 collected power semiconductor 5 of data acquisition unit by optical fiber
Letter is sent to external collection plate 2 and is stored.In the specific embodiment of the invention, collection plate 2 is the terminal of data message stream,
Data are no longer uploaded to external host computer 6, but collection plate 2 can be connected by external computer and download corresponding data.
Control unit 11 receives the arteries and veins for coming from external pulse plate 3 by pulsed signal and failure feedback unit 13
Signal is rushed, driving letter is sent to external power semiconductor 5 by driving unit 14 again after handling pulse signal
Number.
The driving unit 14 of driving plate 1 further comprises that detection circuit, detection circuit obtain power semiconductor 5
Fault-signal, and fault-signal is sent to control unit 11.The power semiconductor device that control unit 11 acquires detection circuit
5 fault-signal of part carries out digital filtering processing（Or it is sent directly to pulsed signal and failure feedback unit without processing
13）, and by pulsed signal and failure feedback unit 13 by the fault-signal of power semiconductor 5 after treatment
It is sent to pulse plate 3.
Power semiconductor driving device further includes that unit 11, data acquisition unit 12 and driving unit 14 carry in order to control
The power supply unit 15 of power supply source.As shown in Fig. 5, power supply unit 15 further comprises isolating transformer 151, the first BUCK circuits
152, the 2nd BUCK circuits 153, the 3rd BUCK circuits 154, low-pressure linear voltage-stablizer 155, boosting charge pump 156 and reversed charge
Pump 157.DC+15.7V power supplys in driving plate 1 export DC ± 15V by the secondary side winding of the isolating transformer 151 of 6000VAC
Power supply, wherein DC-15V power supplys are powered for driving unit 14, and the boosted charge pump 156 of DC+15V power supplys is driving unit all the way
Detection circuit in 14 provides DC+30V power supplys, and another way DC+15V power supplys are converted to DC+5V electricity through the first BUCK circuits 152
Source.Through the 2nd BUCK circuits 153, unit 11 provides DC+3.3V power supplys to DC+5V power supplys in order to control, and DC+5V power supplys are through the 3rd BUCK
Unit 11 provides DC+1.2V power supplys to circuit 154 in order to control.DC+5V power supplys are through low-pressure linear voltage-stablizer（LDO, Low Dropout
Regulator）155 provide DC+2.5V power supplys for data acquisition unit 12, and DC+5V power supplys are adopted through reversed charge pump 157 for data
Collect unit 12 and DC-2.5V power supplys are provided.
The driving unit 14 of power semiconductor 5 is driven using MOSFET, and MOSFET can provide bigger relative to BJT
There is driving current higher switching frequency, the present embodiment to use the P-channel MOSFET and a VISHAY public affairs of an IR company
The N-channel MOS FET of department constitutes power semiconductor（IGBT）5 driving unit 14, peak point current is up to 31A.Such as attached drawing
Shown in 6, driving unit 14 further comprises signal processing circuit 143, PMOS 144 and NMOS 145.It is exported by control unit 11
Pwm pulse signal through signal processing circuit 143 carry out level conversion（Displacement）After signal enhanced processing, then export to by
The realization of power semiconductor driving unit driving power semiconductor devices 5 that PMOS 144 and NMOS 145 is constituted is opened or is closed
It is disconnected.
Data acquisition unit 12 can also under control of the control unit 11, and it is quick that acquisition comes from the 1 each temperature in inside of driving plate
Feel the temperature information of position.As shown in Fig. 7, the acquisition of data acquisition unit 12 is by treated the power of signal condition unit 16
The gate pole emitter voltage V of semiconductor devices 5GE, collector emitter voltage VCEAnd the saturation conduction of power semiconductor 5
Pressure drop VCESAT.Control unit 11 passes through I2C（Inter-Integrated Circuit, the abbreviation of inter-integrated circuit are one
The general serial communication bus standard of kind）The temperature come from inside driving plate 1 that bus monitoring data acquisition unit 12 obtains
Information.Data acquisition unit 12 uses the acquisition of analog quantity the chip of ADI companies and TI companies, the present embodiment need to acquire 3 altogether
Road analog quantity（VGE、VCEAnd VCESAT）, using two panels AD（Simulation numeral）Conversion chip, 12 AD conversion chips of a piece of binary channels
For acquiring VGEAnd VCESAT, 14 AD conversion chips of a piece of single channel are for acquiring VCE, the maximum sampling of two panels AD conversion chip
Rate is 65MSPS, and is inputted using analog differential, parallel output.The input/output structure of signal condition unit 16 is single-ended slip
Point, conditioned differential analog signal is again by the ADC of data acquisition unit 12（Analog-digital Converter）Chip is converted into required essence
The parallel data of degree, then parallel data is sent into control unit 11 and is handled.Driving plate 1 sends gate electrode drive signals VGEIt drives
Dynamic power semiconductor 5, while receiving the feedback signal V of power semiconductor 5CE、VCESAT。
As shown in Fig. 8, pass through the 50MHz optical fiber transmission datas of Avago companies, driving between driving plate 1 and host computer 6
It is connected by optical fiber between plate 1 and collection plate 2, pulse plate 3, the maximum baud rate of optical fiber transmission is 37.5Mbps, communicates lattice
Formula is：V is transmitted in 1 start bit, 2 stop positions, 16 data bit, 1 even parity checkGE、VCEEach 8, VGEFor signed number evidence,
VCEFor data without sign, data frame length is 2 bytes, and error correcting system is after data frame by the way of an empty frame.Control unit
11 by optical fiber transmission, 16 Bits Serial data frames are sent to 2,16 Bits Serial data frame of collection plate includes power semiconductor 5
Gate pole emitter voltage VGE, collector emitter voltage VCEEach 8 data.
FPGA of the control unit 11 based on Xilinx（Field programmable gate array）Realize that there is abundant money inside FPGA
Source can be perfectly suitable for the big application scenario of logical process amount.
Embodiment 3
As shown in Fig. 2, on the basis of embodiment 2, one piece of driving plate 1 further drives two power semiconductors simultaneously
5.As shown in Fig. 4, detection plate 4 further comprises the first detection plate 41 and the second detection plate 42, the first detection plate 41 and second
Detection plate 42 acquires a power semiconductor respectively（That is IGBT in figure）5 running state information.Control unit 11 into one
Step includes the first control unit 111 and the second control unit 112, and data acquisition unit 12 further comprises that the acquisition of the first data is single
Member 121 and the second data acquisition unit 122, pulsed signal further comprise the first pulse signal with failure feedback unit 13
It receives and further comprises with failure feedback unit 131 and the second pulsed signal and failure feedback unit 132, driving unit 14
First driving unit 141 and the second driving unit 142.
The specific embodiment of the invention proposes a kind of power semiconductor for having data acquisition function based on discrete device
The technical solution of device drive apparatus and system realizes the intelligent driving of power semiconductor 5, has power semiconductor
Operative state parameter simulation amount acquires function, by acquiring the switch data of fault moment power semiconductor 5, mainly
Including gate pole emitter voltage VGE, collector emitter voltage VCE, and by optical-fibre communications, by the information real-time Transmission of acquisition
It is stored to host computer 6, in addition also has the function of acquiring 1 temperature of driving plate, these technical solutions are in the field of business still in sky at present
In vain.With the development of big data and life prediction, executing agency-power semiconductor as current transformer（IGBT）5 fortune
Row status data, which must be monitored, participates in operation, and is managed collectively by upper layer.The specific embodiment of the invention propose based on intelligence
The power semiconductor driving device and system of energyization driving have extremely in the entire life cycle of power semiconductor 5
Important role is closed, the operating status and fault data of power semiconductor 5, which can be used as, improves traditional power semiconductor
The reference of device drive module and foundation further promote the quality and reliability of traditional power semiconductor drive module.
The power semiconductor for having data acquisition function by implementing specific embodiment of the invention description drives dress
It sets and the technical solution of system, can have the following technical effects：
（1）The power semiconductor driving device for having data acquisition function and system of specific embodiment of the invention description were both
The stability and reliability of conventional power semiconductors device drive device are inherited, and with acquisition power semiconductor in real time
Status data information, and the function of fault moment data is communicated and stored with host computer, it can occur in power semiconductor
Fault waveform can be restored after failure, and reliable data are provided for the life prediction of power semiconductor and increased quality design
Support；
（2）The power semiconductor driving device and system phase for having data acquisition function of specific embodiment of the invention description
For traditional power semiconductor driving device, pulse is carried out using FPGA and relay protective scheme is handled, operating voltage is by DC+
15V is reduced to DC+3.3V, the power consumption of driving device to be greatly reduced；
（3）The power semiconductor driving device and system work(for having data acquisition function of specific embodiment of the invention description
Rate semiconductor devices driving device is using FPGA processing pulses and realizes relay protective scheme so that and driving plate has programmable features,
Parameter configuration can be driven by changing software realization, can effectively simplify task amount, shorten the hardware development period；
（4）The power semiconductor driving device and system work(for having data acquisition function of specific embodiment of the invention description
Rate semiconductor devices driving device has programmable features, and the pulse signal of concurrently or sequentially format can be received by programming,
To adapt to different system requirements, the applicability of driving device is substantially increased.
Each embodiment is described by the way of progressive in this specification, the highlights of each of the examples are with other
The difference of embodiment, just to refer each other for identical similar portion between each embodiment.
The above described is only a preferred embodiment of the present invention, being not intended to limit the present invention in any form.Though
So the present invention has been disclosed with preferred embodiment as above, and however, it is not intended to limit the invention.It is any to be familiar with those skilled in the art
Member, in the case where not departing from the Spirit Essence and technical solution of the present invention, all using in the methods and techniques of the disclosure above
Appearance makes many possible changes and modifications to technical solution of the present invention, or is revised as the equivalent embodiment of equivalent variations.Therefore,
Every content without departing from technical solution of the present invention is made to the above embodiment any simple according to the technical essence of the invention
Modification, equivalent replacement, equivalence changes and modification still fall within the range of technical solution of the present invention protection.
Claims (12)
1. a kind of power semiconductor driving device having data acquisition function, which is characterized in that including：
It is arranged in driving plate（1）On control unit（11）, data acquisition unit（12）, pulsed signal and failure feedback
Member（13）And driving unit（14）, described control unit（11）Respectively with the data acquisition unit（12）, pulsed signal
With failure feedback unit（13）, driving unit（14）It is connected；
The data acquisition unit（12）In described control unit（11）Control under, obtain and come from external detection plate（4）
The power semiconductor of acquisition（5）Status information；
Described control unit（11）By the data acquisition unit（12）The collected power semiconductor（5）State
Information is sent to external collection plate（2）；
Described control unit（11）Pass through the pulsed signal and failure feedback unit（13）It receives and comes from external arteries and veins
Punching（3）Pulse signal, pass through the driving unit after handling pulse signal again（14）It is partly led to external power
Body device（5）Send drive signal；
Described control unit（11）Pass through the pulsed signal and failure feedback unit（13）By the power semiconductor device
Part（5）Fault-signal be sent to the pulse plate（3）.
2. the power semiconductor driving device according to claim 1 for having data acquisition function, it is characterised in that：
The driving unit（14）In still further comprise detection circuit, the detection circuit obtains the power semiconductor（5）
Fault-signal, and the fault-signal is sent to described control unit（11）.
3. the power semiconductor driving device according to claim 1 or 2 for having data acquisition function, feature exist
In：The power semiconductor driving device further includes for described control unit（11）, data acquisition unit（12）And driving
Unit（14）The power supply unit of power supply is provided（15）.
4. the power semiconductor driving device according to claim 3 for having data acquisition function, it is characterised in that：
The power supply unit（15）Further comprise isolating transformer（151）, the first BUCK circuits（152）, the 2nd BUCK circuits
（153）, the 3rd BUCK circuits（154）, low-pressure linear voltage-stablizer（155）, boosting charge pump（156）It is pumped with reversed charge（157）；
The driving plate（1）Interior power supply passes through the isolating transformer（151）Secondary side winding export DC ± 15V power supplys, DC-15V
Power supply is the driving unit（14）Power supply, DC+15V power supplys are through the boosting charge pump all the way（156）For the driving unit
（14）In detection circuit provide DC+30V power supplys, another way DC+15V power supplys are through the first BUCK circuits（152）It is converted to
DC+5V power supplys；DC+5V power supplys are through the 2nd BUCK circuits（153）For described control unit（11）DC+3.3V power supplys are provided,
DC+5V power supplys are through the 3rd BUCK circuits（154）For described control unit（11）DC+1.2V power supplys, DC+5V power supplys warp are provided
The low-pressure linear voltage-stablizer（155）For the data acquisition unit（12）There is provided DC+2.5V power supplys, DC+5V power supplys warp described in
Reversed charge pumps（157）For the data acquisition unit（12）DC-2.5V power supplys are provided.
5. have the power semiconductor driving device of data acquisition function according to claim 1,2 or 4 any one of them,
It is characterized in that：The driving unit（14）Further comprise signal processing circuit（143）、PMOS（144）And NMOS（145）；
By described control unit（11）The pwm pulse signal of output is through the signal processing circuit（143）Carry out level conversion and signal
After enhanced processing, then export to by the PMOS（144）And NMOS（145）The power semiconductor driving unit of composition drives
The power semiconductor（5）Realization is switched on or off.
6. the power semiconductor driving device according to claim 5 for having data acquisition function, it is characterised in that：
The data acquisition unit（12）Also in described control unit（11）Control under, acquisition come from the driving plate（1）It is internal
Temperature information.
7. the power semiconductor driving device according to claim 6 for having data acquisition function, it is characterised in that：
The data acquisition unit（12）Signal condition unit is passed through in acquisition（16）Treated the power semiconductor（5）Door
Pole emitter voltage（VGE）, collector emitter voltage（VCE）And saturation conduction pressure drop（VCESAT）；Described control unit（11）It is logical
Cross I2Data acquisition unit described in C bus monitorings（12）What is obtained comes from the driving plate（1）Internal temperature information.
8. the power semiconductor driving device according to claim 7 for having data acquisition function, it is characterised in that：
The driving plate（1）With the collection plate（2）, pulse plate（3）Between connected by optical fiber, described control unit（11）Pass through
16 Bits Serial data frames are sent to the collection plate by optical fiber transmission（2）, the maximum baud rate of optical fiber transmission is 37.5Mbps, institute
It includes the power semiconductor to state 16 Bits Serial data frames（5）Gate pole emitter voltage（VGE）, collector emitter electricity
Pressure（VCE）Each 8 data.
9. the power semiconductor for having data acquisition function according to claim 1,2,4,6,7 or 8 any one of them drives
Dynamic device, it is characterised in that：Described control unit（11）It is realized based on FPGA, the power semiconductor（5）For IGBT.
10. the power semiconductor driving device according to claim 9 for having data acquisition function, feature exist
In：The driving plate（1）Two power semiconductors are driven simultaneously（5）.
11. a kind of power semiconductor drive system having data acquisition function, which is characterized in that including：As right is wanted
Seek 1 to 10 any one of them driving plate（1）, and with the driving plate（1）Connected collection plate（2）, pulse plate（3）And detection
Plate（4）；The driving plate（1）Subordinate connect the detection plate（4）And power semiconductor（5）, the driving plate（1）It will
The detection plate（4）The collected power semiconductor（5）Status information be sent to the collection plate（2）；It is described
Driving plate（1）Higher level connect the collection plate（2）, pulse plate（3）, the driving plate（1）Receive the pulse plate（3）It issues
Pwm pulse signal, and according to the pwm pulse signal be the power semiconductor（5）Offer is switched on or off driving letter
Number；The driving plate（1）Pass through driving unit（14）In detection circuit obtain the power semiconductor（5）Failure letter
Number, the driving plate（1）Simultaneously to the pulse plate（3）Feed back the power semiconductor（5）Fault-signal.
12. the power semiconductor drive system according to claim 11 for having data acquisition function, feature exist
In：The pulse plate（3）The power semiconductor that will be received（5）Fault-signal be sent to the collection plate（2）.
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| CN111106105A (en) * | 2018-10-25 | 2020-05-05 | 株洲中车时代电气股份有限公司 | System-on-chip based on IGBT |
| CN112202430A (en) * | 2019-07-08 | 2021-01-08 | 中车株洲电力机车研究所有限公司 | Drive board and drive device of insulated gate bipolar transistor |
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