CN108400172B - 一种集成亚波长结构的聚合物和纳米材料的InGaAs探测器 - Google Patents
一种集成亚波长结构的聚合物和纳米材料的InGaAs探测器 Download PDFInfo
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Abstract
本发明公开了一种集成亚波长结构的聚合物和纳米材料的InGaAs探测器,从上至下其结构依次为:亚波长结构的聚合物和纳米材料、InP缓冲层、InGaAs吸收层、InP帽层、SiO2介质层、光敏芯片铟柱、读出电路铟柱、读出电路。本发明的优点为:第一,通过集成高折射率的亚波长材料,能够进一步提升传统可见拓展InGaAs器件的量子效率;第二,相比传统增透膜材料,基于亚波长结构的聚合物和纳米材料具有高度的材料和结构调控性,此外具备高生产效率和更低的生产成本;第三,该亚波长结构能够降低探测系统复杂度及尺寸,并与探测器实现工艺兼容。
Description
技术领域
本发明是关于一种探测器,具体是指一种集成亚波长结构的聚合物和纳米材料的InGaAs探测器,它能够实现可见到短波红外光的宽光谱响应。
背景技术
经典的铟镓砷探测器为PIN型的InP/In0.53Ga0.47As/InP结构,其在0.9-1.7μm波段内拥有良好的性能,使其在民用、航空航天等领域有广泛的应用性。然而在夜暗环境里的自然光,如月光、大气辉光、星光等夜天光,主要集中在0.4-1.7μm波段。为了实现InGaAs焦平面探测器在微光夜视成像中的应用,需要将光谱响应范围向可见波段进行拓展。由于InP衬底的吸收作用,抑制探测器在可见光波段的探测。通过衬底减薄工艺,可以使InGaAs探测器在可见-近红外波段获得响应。目前,可见拓展InGaAs探测器在可见波段的量子效率还普遍较低。因此需要一种新型结构的InGaAs探测器,能够在可见波段获得高的量子效率,以实现在微光探测等领域中的高质量宽光谱成像。
发明内容
针对现有InGaAs探测器在可见波段的低量子效率,本发明提出一种集成亚波长结构的聚合物和纳米材料的InGaAs探测器。采用亚波长结构的聚合物和纳米材料作为高性能增透层,能够提升当前InGaAs探测器在可见波段的探测性能。基于密尔共振等机制,这种亚波长结构的聚合物和纳米材料具有高的折射率,能够实现探测器吸收增强,因而优于传统的薄膜增透层。相比常用的金属亚波长结构,亚波长结构的聚合物和纳米材料能避免金属的本征吸收。此外,本发明在工艺上具有高度的材料结构调控性,及高的生产效率和更低的生产成本等优势。
本发明中,探测器结构示意图如图1所示,该器件是亚波长结构的聚合物和纳米材料1、InP缓冲层2、InGaAs本征吸收层3、InP帽层4、SiO2介质层5、光敏芯片铟柱6、读出电路铟柱7和读出电路8。其中,亚波长结构是由微纳尺度的结构单元组成的阵列。本发明中的结构单元设计不局限于纳米柱,通过微纳工艺可使其具有纳米孔、纳米环、纳米环孔等多种结构。图2为传统的PIN型InGaAs探测器,其中InP缓冲层2较厚。集成亚波长结构的聚合物和纳米材料1制备在经过衬底减薄工艺的InP缓冲层上。
本发明所涉及的关键工艺步骤如附图3所示,1)取样清洗,2)减薄缓冲层2,3)沉积聚合物和纳米材料的混合物,4)图形化加工,5)刻蚀亚波长结构。具体工艺流程步骤如下:
1取样清洗,依次采用丙酮、乙醇、去离子水浸泡并清洗样品5~10分钟。
2采用机械抛光机和化学腐蚀法对InP衬底材料进行减薄,机械抛光机转速也为50~80rpm,减薄厚度为100~200微米,使用盐酸磷酸混合溶液进一步刻蚀InP缓冲材料,使其厚度最终为10~1000nm。
3采用机械搅拌和超声波分散将纳米材料和聚合物混合均匀。控制匀胶机转速在1000~8000rpm,使聚合物和纳米材料的混合物在InP表面形成连续薄膜,其厚度为0.05~5μm。
4采用微纳图形加工技术对样品进行掩膜层,使其具有周期性的微纳结构,使其具有单元排列周期为0.05~10μm。
5使用氧离子体刻蚀或者湿法化学刻蚀,获得所设计的亚波长结构阵列,并除去掩膜层。
本发明的优点在于:
A.该新型InGaAs探测器利用具有亚波长结构的聚合物和纳米材料增透层,能够利用密尔共振等物理机制有效提升探测器在可见波段的量子效率。
B.该新型InGaAs探测器使用了聚合物和纳米材料的混合结构,因而相比传统InGaAs增透层技术,具有更好的生产效率和更低廉的生产成本。
C.基于亚波长结构的聚合物和纳米材料增透层技术能有效与基于衬底减薄技术的InGaAs探测器现实工艺兼容,并降低探测系统的复杂度,系统的尺寸及重量。
附图说明
图1为本发明的器件结构示意图。
图2为传统的InGaAs器件结构示意图。
图3为本发明的制备工艺流程图。
图中:
1——亚波长结构的聚合物和纳米材料;
2——InP缓冲层;
3——InGaAs本征吸收层;
4——InP帽层;
5——SiO2介质层;
6——光敏芯片铟柱;
7——读出电路铟柱;
8——读出电路;
具体实施方式
实施例1
1取样清洗,依次采用丙酮、乙醇、去离子水浸泡并清洗样品5~10分钟。
2采用机械抛光机和化学腐蚀法对InP衬底材料进行减薄,机械抛光机转速为50~80rpm,减薄厚度为200微米,使用盐酸磷酸混合溶液进一步刻蚀InP缓冲材料,使其厚度最终为10nm。
3采用机械搅拌和超声波分散将碳纳米管和聚二甲基硅氧烷混合均匀。控制匀胶机转速在1000rpm,使纳米材料和聚合物的混合物在InP表面形成连续薄膜,其厚度为5μm。
4采用微纳图形加工技术对样品进行掩膜层,使其具有周期性的微纳结构,使其具有单元排列周期为10μm。
5使用氧离子体刻蚀或者湿法化学刻蚀,获得所设计的亚波长结构阵列,并除去掩膜层。
实施例2
1取样清洗,依次采用丙酮、乙醇、去离子水浸泡并清洗样品5~10分钟。
2采用机械抛光机和化学腐蚀法对InP衬底材料进行减薄,机械抛光机转速也为50~80rpm,减薄厚度为150微米,使用盐酸磷酸混合溶液进一步刻蚀InP缓冲材料,使其厚度最终为500nm。
3采用机械搅拌和超声波分散将纳米氧化硅和聚碳酸酯混合均匀。控制匀胶机转速在4000rpm,使纳米材料和聚合物的混合物在InP表面形成连续薄膜,其厚度为1μm。
4采用微纳图形加工技术对样品进行掩膜层,使其具有周期性的微纳结构,使其具有单元排列周期为2μm。
5使用氧离子体刻蚀或者湿法化学刻蚀,获得所设计的亚波长结构阵列,并除去掩膜层。
实施例3
1取样清洗,依次采用丙酮、乙醇、去离子水浸泡并清洗样品5~10分钟。
2采用机械抛光机和化学腐蚀法对InP衬底材料进行减薄,机械抛光机转速也为50~80rpm,减薄厚度为100微米,使用盐酸磷酸混合溶液进一步刻蚀InP缓冲材料,使其厚度最终为1000nm。
3采用机械搅拌和超声波分散将石墨烯和聚3,4-乙烯二氧噻吩混合均匀。控制匀胶机转速在8000rpm,使纳米材料和聚合物的混合物在InP表面形成连续薄膜,其厚度为0.05μm。
4采用微纳图形加工技术对样品进行掩膜层,使其具有周期性的微纳结构,使其具有单元排列周期为0.05μm。
5使用氧离子体刻蚀或者湿法化学刻蚀,获得所设计的亚波长结构阵列,并除去掩膜层。
Claims (1)
1.一种集成亚波长结构的聚合物和纳米材料的InGaAs探测器,包括亚波长结构的聚合物和纳米材料(1)、InP缓冲层(2)、InGaAs吸收层(3)、InP帽层(4)、SiO2介质层(5)、光敏芯片铟柱(6)、读出电路铟柱(7)、读出电路(8),其特征在于:
所述的InGaAs探测器结构为:亚波长结构的聚合物和纳米材料(1)在InP缓冲层(2)之上、InP缓冲层(2)在InGaAs吸收层(3)之上、InGaAs吸收层(3)在InP帽层(4)之上、SiO2介质层(5)在InP帽层(4)下面,光敏芯片铟柱(6)通过SiO2介质层(5)的开孔处与InP帽层(4)连接,光敏芯片铟柱(6)与读出电路铟柱(7)连接,读出电路铟柱(7)连接读出电路(8);
所述的亚波长结构的聚合物和纳米材料(1)为聚合物和纳米材料的混合物薄膜,该薄膜表面具有周期性的微纳结构,周期性的微纳结构是纳米柱阵列、纳米孔阵列、纳米环阵列、或纳米环孔阵列;所述亚波长结构的聚合物和纳米材料(1)中聚合物采用聚二甲基硅氧烷、聚甲基丙烯酸甲酯、丙烯腈-丁二烯-苯乙烯共聚物、聚对苯二甲酸乙二醇脂、聚3,4-乙烯二氧噻吩、聚3,4-乙烯二氧噻吩-聚苯乙烯磺酸或聚碳酸脂;纳米材料采用碳纳米管、纳米银线、石墨烯、氧化石墨烯、纳米氧化硅或碳量子点;所述亚波长结构的聚合物和纳米材料(1)厚度为0.05~5μm,其微纳结构的单元排列周期为0.05~10μm;
所述的InP缓冲层(2)的厚度为10~1000nm;
所述InP帽层(4)的厚度为0.5~2μm。
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