CN108398834A - 显示面板以及制备显示面板的方法 - Google Patents

显示面板以及制备显示面板的方法 Download PDF

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Publication number
CN108398834A
CN108398834A CN201810241784.5A CN201810241784A CN108398834A CN 108398834 A CN108398834 A CN 108398834A CN 201810241784 A CN201810241784 A CN 201810241784A CN 108398834 A CN108398834 A CN 108398834A
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CN
China
Prior art keywords
display panel
electrode
array substrate
liquid crystal
substrate
Prior art date
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Pending
Application number
CN201810241784.5A
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English (en)
Inventor
张舜航
张世玉
严允晟
林允植
廖峰
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to CN201810241784.5A priority Critical patent/CN108398834A/zh
Publication of CN108398834A publication Critical patent/CN108398834A/zh
Priority to PCT/CN2019/078995 priority patent/WO2019179484A1/zh
Priority to US16/642,210 priority patent/US11204529B2/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
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Abstract

本发明公开了显示面板以及制备显示装置的方法。该显示面板包括：阵列基板，以及与所述阵列基板对盒设置的彩膜基板；以及密封在所述阵列基板以及所述彩膜基板之间的液晶分子，其中，所述阵列基板上设置有像素电极以及公共电极，所述像素电极以及所述公共电极在所述阵列基板上的正投影之间具有重叠区域，所述液晶分子具有85～90度的预设角，以及90度的方位角。由此，该显示面板可以具有较快的响应速度，适用于需要画面切换较快、较频繁的应用场景。

Description

显示面板以及制备显示面板的方法
技术领域
本发明涉及显示领域，具体地，涉及显示面板以及制备显示面板的方法。
背景技术
随着显示技术的发展，用户对于显示装置的要求也随之提高。基于高级超维场转换技术(Advanced Super Dimension Switch，ADS)的液晶显示装置，由于具有透光效率高、宽视角、超高清晰度等优点，逐渐成为液晶显示装置的主流产品。
虽然与基于平面方向转换技术(In plane switching,IPS)的显示装置相比，ADS面板具有诸多优势，但由于ADS模式的液晶动作方式为水平动作，因此其液晶偏转方式决定了这一类型的显示装置的液晶分子响应时间较长。
由此，基于高级超维场转换技术(Advanced Super Dimension Switch，ADS)的液晶显示面板仍有待改进。
发明内容
本发明是基于发明人对以下事实的发现和认识而作出的：
如前所述，目前ADS模式采用的液晶的动作方式为水平动作，其液晶偏转的方式决定它的响应时间(RT)比较长，一般在15ms左右，而随着VR/AR技术和3D显示技术的发展和普及，需要显示装置具有更快的响应速度，来对应更好、更真实的显示效果。例如AR/VR产品，虽然目前采用OLED的显示，可以达到＜1ms的响应时间，但是目前OLED显示装置的显示分辨率(如PPI值，Pixels Per Inch)和信赖性的问题仍无法解决。因此，如能够开发一种具有高响应速度的、基于ADS模式的液晶显示面板，将大幅缓解甚至解决上述问题。
在本发明的一个方面，本发明提出了一种显示面板。该显示面板包括：阵列基板，以及与所述阵列基板对盒设置的彩膜基板；以及密封在所述阵列基板以及所述彩膜基板之间的液晶分子，其中，所述阵列基板上设置有像素电极以及公共电极，所述像素电极以及所述公共电极在所述阵列基板上的正投影之间具有重叠区域，所述液晶分子具有85～90度的预设角，以及90度的方位角。由此，该ADS型显示装置可以具有较快的响应速度，适用于需要画面切换较快、较频繁的应用场景。
根据本发明的实施例，所述阵列基板的衬底上具有多个阵列排布的子像素区域，每个所述子像素区域中设置有一个所述像素电极，以及多个所述公共电极。由此，可以进一步提高像素电极以及公共电极形成的电场对子像素区域中的液晶分子的控制能力。
根据本发明的是实施例，所述公共电极为条形电极，且所述公共电极在所述衬底上的正投影位于所述子像素区域的边缘，并落在所述像素电极在所述衬底的正投影区域内。由此，可以进一步提高对液晶分子的控制能力。
根据本发明的实施例，所述阵列基板的衬底上具有多个阵列排布的子像素区域，单个所述子像素区域中，设置有一个所述像素电极，以及具有多个镂空部的所述公共电极。由此，可以进一步提高对液晶分子的控制能力。
根据本发明的实施例，所述公共电极中所述镂空部以外部分在所述衬底上的正投影外侧的边缘，位于所述子像素区域的边缘上，并落在所述像素电极在所述衬底的正投影区域内。由此，可以进一步提高对液晶分子的控制能力。
根据本发明的实施例，所述公共电极以及所述像素电极设置在所述阵列基板的衬底的同侧。由此，可以进一步提高对液晶分子的控制能力。
根据本发明的实施例，所述公共电极以及所述像素电极设置在所述阵列基板靠近所述液晶分子的一侧，所述像素电极靠近所述衬底设置，且所述公共电极以及所述像素电极之间设置有绝缘平坦层。由此，可以进一步提高对液晶分子的控制能力。
根据本发明的实施例，液晶分子具有87度的预设角。由此，可以进一步提高该显示面板的响应速度。
在本发明的另一方面，一种显示装置。该显示装置包括前面所述的显示面板。由此，该显示装置具有前面所述的显示面板所具有的全部特征以及优点，在此不再赘述。
在本发明的又一方面，本发明提出了一种制备显示面板的方法。根据本发明的实施例，该方法包括：提供彩膜基板以及设置有像素电极以及公共电极的阵列基板；将所述阵列基板与彩膜基板对盒设置，并在其中填充液晶分子，其中，所述液晶分子具有85～90度的预设角，以及90度的方位角。由此，制备的显示面板可以具有较快的响应速度，适用于需要画面切换较快、较频繁的应用场景。
附图说明
本发明的上述和/或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和容易理解，其中：
图1显示了根据本发明一个实施例的显示面板的结构示意图；
图2显示了现有技术中一个显示面板的结构示意图；
图3显示了根据本发明一个实施例的显示面板的结构示意图；
图4显示了根据本发明另一个实施例的显示面板的结构示意图；
图5显示了根据本发明一个实施例的显示面板工作时液晶分子的偏转情况示意图；
图6-图8显示了根据本发明一些实施例以及对比例的显示面板的响应时间模拟测试图；
图9显示了根据本发明一个实施例的制备显示面板的方法的流程示意图。
附图标记说明：
100：阵列基板的衬底；110：公共电极；120：像素电极；130：绝缘平坦化层；200：彩膜基板；300：液晶分子。
具体实施方式
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。
在本发明的描述中，术语“上”、“下”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明而不是要求本发明必须以特定的方位构造和操作，因此不能理解为对本发明的限制。
在本发明的一个方面，本发明提出了一种显示面板。根据本发明的实施例，参考图1，该显示面板包括阵列基板、彩膜基板200以及密封在二者之间的液晶分子300。阵列基板包括阵列基板的衬底100，以及其上设置的像素电极110以及公共电极120，像素电极110以及公共电极120在阵列基板上的正投影之间具有重叠区域，液晶分子300具有85～90度的预设角，以及90度的方位角。由此，该ADS型显示面板可以具有较快的响应速度，适用于需要画面切换较快、较频繁的应用场景。
为了方便理解，下面首先对根据本发明实施例的显示面板能够实现快速响应的原理进行简单说明：
参考图2，对于基于VA-IPS(平面方向转换技术)的显示装置而言，虽然液晶分子的响应可以较快，但其公共电极120和像素电极110在同一个平面上，电场方向如图中箭头所示，两个电极需要一定距离才能实现驱动。而本领域技术人员能够理解的是，两个电极之间的距离越近，则显示面板的透过率越低，且由于电场方向的限制，电极正上方的液晶分子300是无法实现偏转的，因此该类型的显示面板，在用于制备高PPI的像素结构时，透过率会很低。参考图3，根据本发明实施例的VA-ADS类型显示面板，公共电极120(如图中所示出的120A以及120B)和像素电极110之间可以上下交叠，形成的电场可以驱动位于电极正上方的液晶分子。因此，其在形成高PPI像素时的显示面板时，可以保持较高的透过率。然而如前所述，该种电场在实现液晶分子300的扭转时，响应时间(RT)较长。因此，如能够在保持电场情况(即公共电极120和像素电极110之间的相对位置不变)的前提下，通过设计电极的具体形状、距离、液晶分子排布等方式，实现响应时间的提高，则可以同时获得较高的透过率以及画面切换效果。发明人发现，对于公共电极以及像素电极在垂直方向上有交叠的情况，可以通过设置液晶分子的预设角以及方位角，改善液晶分子的响应时间，实现提高响应速度，提升画面转换效果。
发明人发现，对于VA-ADS形式的显示面板而言，液晶分子垂直排列(即方位角为90度)可以获得较快的相应时间。参考图4以及图5，以长黑模式为例，相比于长白模式，长黑模式在暗态(如图4中所示出的BLACK模式)下的显示效果更好。当不加电压时(此时为暗态模式，如图5中所示出的BLACK)，液晶整体处于竖直排列(即方位角为90度)，光不能通过，当加电压后，像素电极(如图4中所示出的Pixel)以及公共电极(如图4中所示出的Com)之间形成如图4中曲线箭头所示出的电场，液晶向竖直方向发生动作，光可以通过(此时为亮态，如图4以及图5中所示出的WHITE)。本领域技术人员能够理解的是，该显示面板还可以包括含有彩色滤光片以及黑矩阵(如图中彩膜基板衬底上所示出的黑色矩形结构)，以及设置在彩膜基板衬底和阵列基板衬底之间的、用于限定液晶分子排列方向的PI膜(如图4中所示出的VAPI)等结构。亮态(WHITE)以及暗态(BLACK)下，不同视角下液晶分子的偏转情况如图5所示。
具体而言，目前常用于VA-ADS型显示面板的液晶分子的基本弹性常数以及显示性能如表1所示：液晶的基本弹性常数分为展曲K11，扭曲K22和弯曲K33，其大小顺序为K33＞K11＞K22。当液晶动作为竖直方向，其弹性常数K33比水平方向的弹性常数K22大，所以沿这一方向进行转动所需的时间小，这样这种模式的RT时间会被大大缩短。由此，可以获得较快的相应速度，画面转换效果好。
表1 液晶分子基本弹性常数及显示性能
展曲K11 扭曲K22 弯曲K33
动作方式 水平转动 扭曲转动 竖直转动
弹性系数 中 小 大
驱动电压 中 低 高
响应时间 中 慢 快
根据本发明的一些实施例，阵列基板100的衬底上具有多个阵列排布的子像素区域(如图中虚线所示出的区域)，每个子像素区域中设置有一个像素电极110，以及多个公共电极120。由此，可以进一步提高像素电极以及公共电极形成的电场对子像素区域中的液晶分子的控制能力。例如，具体的，公共电极120可以为条形电极，且公共电极120在衬底100上的正投影位于子像素区域的边缘，并落在像素电极110在衬底100的正投影区域内。由此，可以保证子像素区域内的液晶分子300均处于电场中，从而可以进一步提高对液晶分子的控制能力。
或者，根据本发明的另一些实施例，也可以在单个子像素区域中，设置有一个像素电极110，以及具有多个镂空部的公共电极。即：图3中所示出的公共电极120A以及120B，可以为一个彼此相连的公共电极。由此，可以进一步提高对液晶分子的控制能力。类似的，在该类实施例中，公共电极中镂空部以外部分在衬底上的正投影，也可以位于子像素区域中，且公共电极镂空部以外部分，在衬底上正投影的外侧的边缘也位于子像素区域的边缘上，公共电极的正投影(即除去镂空部以外部分的正投影)落在像素电极在衬底的正投影区域内。需要说明的是，在本发明中，“外侧的边缘位于子像素区域的边缘上”应做广义理解。即：在这些实施例中，由于公共电极为镂空电极，因此公共电极在衬底上的正投影，也具有镂空部，因此公共电极的正投影具有外侧的边缘(限定出公共电极所在的位置)以及内侧的边缘(在公共电极所在区域内限定出镂空部)。其中，公共电极外侧的边缘，可以与子像素区域的边缘重合，或者公共电极外侧的边缘，也可尽量靠近子像素区域的边缘设置。由此，可以进一步提高对液晶分子的控制能力。
根据本发明的实施例，公共电极120可以和像素电极110设置在衬底100的同侧。具体的，公共电极120以及像素电极110可以设置在阵列基板靠近液晶分子的一侧，像素电极靠近衬底设置，且公共电极以及像素电极之间设置有绝缘平坦层(如图1中所示出的130)。由此，可以进一步提高对液晶分子的控制能力。根据本发明的实施例，像素电极110的宽度(如图3中所示出的L2)、公共电极120的宽度(如图中所示出的L1)以及多个公共电极(或是同一公共电极的不同部分)与像素电极之间的距离(如图中所示出的S1和S2)均不受特别限制。根据本发明的具体实施例，S1和S2可以相等，像素电极110的长度可以为1～8微米，公共电极的长度可以为2微米。上述参数，可根据显示面板的尺寸、对于PPI的要求等参数进行调节。
根据本发明的实施例，液晶分子可以具有87度的预设角。发明人发现，在此特定的预设角度下，可以进一步提高该显示面板的响应速度。
在本发明的另一方面，本发明提出了一种制备显示面板的方法。根据本发明的实施例，参考图该方法包括：
S100：提供彩膜基板以及阵列基板
根据本发明的实施例，在该步骤中，可以提供设置有像素电极以及公共电极的阵列基板，以及彩膜基板。阵列基板可以具有如前述的显示面板中的阵列基板相同的结构，再次不再赘述。彩膜基板的具体结构不受特别限制，本领域技术人员可以根据实际情况进行选择。
S200：对盒设置并填充液晶分子
根据本发明的实施例，在该步骤中，将阵列基板与彩膜基板对盒设置并向其中填充液晶分子。其中，液晶分子具有85～90度的预设角，以及90度的方位角。由此，制备的显示面板可以具有较快的响应速度，适用于需要画面切换较快、较频繁的应用场景。
下面对具有根据本发明实施例的上述显示面板结构的基板的响应时间进行拟合测试：
电极结构如图3所示，模拟设置公共电极的宽度L1为2微米，像素电极的宽度(L2)分别为1～8μm(1μm、2μm、3μm、4μm、5μm、6μm、7μm以及8μm)，S1＝S2。液晶分子的预设角为87度，方位角为90度。为方便对比，采用其余参数均一致，液晶分子方位角为0度作为对比。模拟结果如图6～图8所示，可以看出这种的结构Vop(如图6中横坐标所示出的V)在15～20V，透过率(T)为20％(参考图6)，随着像素电极宽度的变化，其模拟结果差异不大，均具有较高的透过率。对比图7(方位角为90度)以及图8(方位角为0)可知(横坐标T为时间，单位毫秒；纵坐标T为透过率)，当方位角为90度时，具有较快的相应时间。分别测试上述两种液晶排布情况的Tr和Tf时间(Tr为屏幕自亮度由10％上升至90％所需时间，Tf为屏幕自亮度由90％下降至10％所需时间)可知，液晶分子垂直排布时，响应速度要明显快于水平排布的模式；如表2所示，垂直排布模式的RT时间为3.3ms，而水平排布为26ms。
表2 不同排布方式相应时间对比
水平排布 垂直排布
Tr 13.834ms 1.64254ms
Tf 12.909ms 1.7232ms
RT 26.743ms 3.36574ms
在本说明书的描述中，参考术语“一个实施例”、“另一个实施例”等的描述意指结合该实施例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
尽管上面已经示出和描述了本发明的实施例，可以理解的是，上述实施例是示例性的，不能理解为对本发明的限制，本领域的普通技术人员在本发明的范围内可以对上述实施例进行变化、修改、替换和变型。

Claims (10)

1.一种显示面板，其特征在于，包括：
阵列基板，以及与所述阵列基板对盒设置的彩膜基板；以及
密封在所述阵列基板以及所述彩膜基板之间的液晶分子，
其中，所述阵列基板上设置有像素电极以及公共电极，所述像素电极以及所述公共电极在所述阵列基板上的正投影之间具有重叠区域，
所述液晶分子具有85～90度的预设角，以及90度的方位角。
2.根据权利要求1所述的显示面板，其特征在于，所述阵列基板的衬底上具有多个阵列排布的子像素区域，每个所述子像素区域中设置有一个所述像素电极，以及多个所述公共电极。
3.根据权利要求2所述的显示面板，其特征在于，所述像素电极为板状电极，所述公共电极为条形电极，且所述公共电极在所述衬底上的正投影位于所述子像素区域的边缘，并落在所述像素电极在所述衬底的正投影区域内。
4.根据权利要求1所述的显示面板，其特征在于，所述阵列基板的衬底上具有多个阵列排布的子像素区域，单个所述子像素区域中，设置有一个所述像素电极，以及具有多个镂空部的所述公共电极。
5.根据权利要求4所述的显示面板，其特征在于，所述公共电极中所述镂空部以外部分在所述衬底上的正投影外侧的边缘，位于所述子像素区域的边缘上，并落在所述像素电极在所述衬底的正投影区域内。
6.根据权利要求1所述的显示面板，其特征在于，所述公共电极以及所述像素电极设置在所述阵列基板的衬底的同侧。
7.根据权利要求6所述的显示面板，其特征在于，所述公共电极以及所述像素电极设置在所述阵列基板靠近所述液晶分子的一侧，所述像素电极靠近所述衬底设置，且所述公共电极以及所述像素电极之间设置有绝缘平坦层。
8.根据权利要求1所述的显示面板，其特征在于，液晶分子具有87度的预设角。
9.一种显示装置，其特征在于，包括权利要求1-8任一项所述的显示面板。
10.一种制备显示面板的方法，其特征在于，所述方法包括：
提供彩膜基板以及设置有像素电极以及公共电极的阵列基板；
将所述阵列基板与彩膜基板对盒设置，并在其中填充液晶分子，
其中，所述液晶分子具有85～90度的预设角，以及90度的方位角。
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