CN108389910A - A kind of flexible thin-film transistor and preparation method thereof based on ionic gel gate insulating layer - Google Patents
A kind of flexible thin-film transistor and preparation method thereof based on ionic gel gate insulating layer Download PDFInfo
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- CN108389910A CN108389910A CN201810113149.9A CN201810113149A CN108389910A CN 108389910 A CN108389910 A CN 108389910A CN 201810113149 A CN201810113149 A CN 201810113149A CN 108389910 A CN108389910 A CN 108389910A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- 229910052618 mica group Inorganic materials 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000010445 mica Substances 0.000 claims abstract description 57
- 108010025899 gelatin film Proteins 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims description 62
- 229910052751 metal Inorganic materials 0.000 claims description 62
- 239000010408 film Substances 0.000 claims description 29
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 20
- 239000007787 solid Substances 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 16
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- 238000000034 method Methods 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- -1 ammonium tetrafluoroborate Chemical compound 0.000 claims description 4
- 229910052626 biotite Inorganic materials 0.000 claims description 4
- 229910052628 phlogopite Inorganic materials 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000002608 ionic liquid Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 238000001291 vacuum drying Methods 0.000 claims description 3
- 206010037660 Pyrexia Diseases 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 238000011161 development Methods 0.000 abstract description 4
- 230000001276 controlling effect Effects 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000003776 cleavage reaction Methods 0.000 description 10
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- YGANSGVIUGARFR-UHFFFAOYSA-N dipotassium dioxosilane oxo(oxoalumanyloxy)alumane oxygen(2-) Chemical compound [O--].[K+].[K+].O=[Si]=O.O=[Al]O[Al]=O YGANSGVIUGARFR-UHFFFAOYSA-N 0.000 description 3
- 229910052627 muscovite Inorganic materials 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
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- 238000005265 energy consumption Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
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- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
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- 239000007772 electrode material Substances 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- OVARTBFNCCXQKS-UHFFFAOYSA-N propan-2-one;hydrate Chemical compound O.CC(C)=O OVARTBFNCCXQKS-UHFFFAOYSA-N 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000002411 thermogravimetry Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a kind of flexible thin-film transistor and preparation method thereof based on ionic gel gate insulating layer, belongs to technical field of semiconductors.The flexible thin-film transistor includes：Natural mica piece flexible substrate；The channel layer thin film being grown on above-mentioned substrate；It is deposited in above-mentioned mica substrate, with the source-drain electrode of two end in contact of channel layer and the grid being isolated with channel layer；The flexible ionic gel insulating layer for being pasted on channel layer and being in contact with grid.The flexible thin-film transistor of the present invention uses the ionic gel film with huge interface capacitance as insulating layer, it is can be realized under smaller grid voltage to the apparent regulating and controlling effect of channel layer carrier, will be laid the foundation for Novel low power consumption, multi-functional and environmentally friendly flexible thin-film transistor antetype device successful development.
Description
Technical field
The invention belongs to technical field of semiconductors, a kind of flexible thin-film transistor based on ionic gel gate insulating layer and
Preparation method.
Technical background
With the rapid development of electronics industry, to low energy consumption, multi-functional and environmentally friendly electronic product continuous need
It asks, flexible electronic device becomes the next generation with its unique flexible ductility, high-efficiency multi-function and portable wearable property
The key areas of electronics industry development, causes people more and more to pay close attention to.Wherein transistor drives as many electronic equipments
Partial amplifier and switch is applied much in electronic device, therefore flexible thin-film transistor is also a research in recent years
Hot spot.
The preparation problems faced first for the flexible thin-film transistor haveing excellent performance is the selection of flexible substrate.It is presently used
Flexible substrate be generally：Plastic supporting base (polyester PET, poly- polyethylene terephthalate PEN）, super thin metal and glass substrate, paper
Matter substrate etc..But these flexible substrates have certain limitation, such as：The non-refractory of plastics and paper substrate, limitation
Thin film channel layer that is good in depositing crystalline on the substrate at relatively high temperatures, haveing excellent performance；Poor flexible of glass substrate
Property (being susceptible to crack after the period is bent)；Super thin metal substrate manufacturing cost is higher.
Secondly, the performance of transistor depends greatly on the capacitive property of insulating layer material.In given grid voltage
In the case of, the capacitance size of insulating layer directly decides that channel layer excites carrier quantity, then affects carrier channels
Total conductance.And the capacitance size of insulating layer is determined by the thickness of dielectric layer and the dielectric constant of material, it is desirable to obtain
High capacitance must just reduce the thickness of insulating layer or choose the big material of dielectric constant.Traditional field-effect thin film transistor (TFT)
It is general to select SiO2Or SiNxWait insulation films as gate insulation layer, but due to its smaller dielectric constant, in order to reach to ditch
The obvious regulating and controlling effect of channel layer must just reduce its thickness or increase its operating voltage.Reduce thickness will undoubtedly increase
The difficulty of preparation process, and the increase of operating voltage will limit it under many scenes including low-voltage, low energy consumption
Application.
Invention content
The object of the present invention is to provide a kind of flexible thin-film transistor based on ionic gel gate insulating layer and its preparations
Method.
To achieve the above object, steps are as follows for the technical solution adopted in the present invention：
A kind of flexible thin-film transistor based on ionic gel gate insulating layer, feature are：The flexible thin-film transistor includes：
Natural mica piece flexible substrate；The channel layer thin film being grown on the substrate；It is deposited on the cloud with channel layer thin film
On female substrate, with the source-drain electrode of two end in contact of channel layer and the grid being isolated with channel layer；Be pasted on channel layer and and grid
The flexible ionic gel insulating layer being in contact.
The natural mica piece flexible substrate is one kind in muscovite, biotite, phlogopite natural mica piece.
The channel layer thin film be IGZO films, thickness be 10 ~ 150nm, width be 100 ~ 500 μm, length be 100 ~
2000μm。
The source electrode, drain electrode and grid are metal electrode, and thickness is 10 ~ 150nm.
The flexibility ionic gel thickness of insulating layer is 20 ~ 500 μm.
The preparation method of the flexible thin-film transistor based on ionic gel gate insulating layer includes the following steps：
Step 1：The stripping of natural mica piece flexible substrate and surface cleaning
The one kind selected in the natural micas pieces such as muscovite, biotite, phlogopite is substrate material makes it after mechanical stripping
Surface roughness is no more than 1nm.
Further, the mica sheet has natural atomically flating（001）Cleavage surface, high chemical inertness and thermal stability
（~ 1000 ℃）The features such as, and mica sheet size, thickness are adjustable, and can be transferred in other flexible substrates.
Step 2：On the substrate that step 1 obtains, IGZO films are prepared as channel layer
It is above-mentioned it is stripped after mica substrate on, be carved in covering the hollow out metal mask version of different length and width and by its
It is placed in the cavity of impulse laser deposition system.Amorphous IGZO films are deposited using impulse laser deposition system, wherein used
Target is molar ratio In: Ga: Zn=1:1:1 IGZO ceramic targets, laser energy 200mJ, pulse frequency 5Hz, pulse
Number is 1000 ~ 18000, and depositing temperature is room temperature, and deposition oxygen pressure is 1 ~ 15Pa；Finally by the noncrystal membrane deposited 200 ~
At a temperature of 500 DEG C, in 5 × 104The oxygen pressure of Pa carries out the annealing of 1 ~ 3h, and it is 10 ~ 150nm, width to finally obtain thickness
Degree be 100 ~ 500 μm, the IGZO thin film channel layers that length is 100 ~ 2000 μm.
Further, since mica sheet substrate has thermal stability, the temperature of film crystallization can be born（Typically larger than
600 ℃）, and the interface of epitaxial growth is provided.Therefore impulse laser deposition system can also be directly used, it is directly heavy at high temperature
Product goes out the IGZO thin film channel layers of crystalloid.
Step 3：On the substrate with channel layer thin film that step 2 obtains, the source and drain with two end in contact of channel layer is prepared
Grid pole metal source-drain electrode and be isolated with channel layer
Have in the mica substrate of IGZO thin film channel layers in growth, alignment covers and hollow out metal mask version phase in step 1
That matches is carved with the hollow out metal mask version of electrode shape.Metal with two end in contact of channel layer is deposited using metal fever evaporimeter
Source-drain electrode and the metal gates being isolated with channel layer.The thickness of source electrode, drain electrode and grid is 10 ~ 150nm.
Further, the metal electrode material includes Au, Ag, Cr or Al, but not limited to this.
Step 4：The preparation of transferable solid flexible ionic gel film
The selection high-purity ionic liquid methyl-diethyl-(2- methoxyethyl) good with electronics oxide chemistry compatibility is associated with
Ammonium tetrafluoroborate（DEME-BF4）With high molecular polymer vinylidene fluoride-hexafluoropropylene copolymer（P(VDF-HFP)）And nothing
Water acetone, three in mass ratio 1:4:7 prepare clear solution.Nitrogen protection atmosphere, drying environment in, by transparency liquid
It after spin coating on a glass substrate, is positioned in vacuum drying chamber, is dried in vacuo 24 hours at a temperature of 70 DEG C, preparing can turn
The solid flexible ionic gel film of shifting.
Further, the thickness of the ionic gel film can pass through the speed control of spin coating.Differential thermal-thermal gravimetric analysis results
Show that ionic gel film has good thermal stability；By making metal-ion gel-metal capacitor structure, capacitance can
To reach 10 μ F/cm2, carrier ability of regulation and control is up to 1014/cm2。
Step 5：The solid flexible ionic gel film transfer obtained in step 4 is affixed on channel layer, and with grid phase
Contact
Synthetic ionic gel film is cut into suitable shape and size, make its paste completely be covered on channel layer and with
Grid is in contact.
The present invention has selected that cheap, to have under certain thickness flexible natural mica piece be substrate, selects simultaneously
The ionic gel film of solid flexible with huge interface capacitance and superpower carrier ability of regulation and control is insulating layer, is prepared
A kind of novel flexible thin film transistor (TFT), this by for Novel low power consumption, multi-functional flexible thin-film transistor antetype device at
Work(development lays the foundation.
Due to the adoption of the above technical scheme, the present invention has following good effect compared with prior art：
1）Flexible thin-film transistor of the present invention is using cheap and with the natural mica piece of mechanical flexibility be
Substrate, splitting have natural atomically flating（001）Cleavage surface, thus suitable for high-volume flexible device preparation and at
This is relatively low.
2）Channel layer, source electrode, drain electrode and grid in flexible thin-film transistor of the present invention is all in same plane
On, and channel layer, source electrode, the position of drain electrode and grid, shape, size and thickness are adjustable, flexible ionic gel dielectric layer is pasted
It is convenient therefore simple in structure with removal, technique is flexible.
3）Film crystal can not only be further increased as gate insulating layer using flexible ionic gel film in the present invention
The mechanical flexibility of pipe, and due to its huge interface capacitance, it is made to be can be realized under smaller grid voltage to channel layer carrier
Apparent regulating and controlling effect, therefore the operating power consumption of the flexible thin-film transistor is low.
Description of the drawings
Fig. 1 is the preparation flow schematic diagram of flexible thin-film transistor of the present invention；
Fig. 2 is solid flexible ionic gel material object schematic diagram used in the present invention；
Fig. 3 is the I for the thin film transistor (TFT) that the channel layer length prepared in embodiment 2 is 1000 μm, width is 50 μmD-VGSCurve.
Specific implementation mode
Below according to the drawings and specific embodiments, the following further describes the technical solution of the present invention.Implementation as described below
Example is intended to be convenient for a further understanding of the present invention, and does not play any restriction effect to it.
It is a kind of using ionic gel as the flexible thin-film transistor of insulating layer：Natural mica piece flexible substrate；It is grown on above-mentioned
Channel layer thin film on substrate；Be deposited in above-mentioned mica substrate, with the source-drain electrode of two end in contact of channel layer and with channel layer every
From grid；The flexible ionic gel insulating layer for being pasted on channel layer and being in contact with grid.The natural mica piece is flexible
Substrate is one kind in the natural micas pieces such as muscovite, biotite, phlogopite.The channel layer thin film is IGZO films, thickness
For 10 ~ 100nm, width is 100 ~ 500 μm, and length is 100 ~ 2000 μm.The source electrode, drain electrode and grid are metal electricity
Pole, thickness are 10 ~ 150nm.The flexibility ionic gel thickness of insulating layer is 20 ~ 500 μm.
Fig. 1 is that flexible thin-film transistor prepares schematic diagram in the present invention：（a）The stripping of flexible mica sheet and surface are clear
It washes；（b）The hollow out metal mask version of channel layer shape is carved in the mica substrate after stripped, in covering；（c）Using pulse
The method of laser deposition prepares channel layer IGZO films；（d）The hollow out metal mask version of electrode shape is carved in alignment covering；
（e）Source electrode, drain electrode and grid are prepared using thermal evaporation instrument；（f）The ionic gel solid flexible ionic gel film that will be cut
It on transfer sticking to channel layer, and is in contact with grid, has just obtained the flexible thin-film transistor in the present invention.
In the present invention：1）When preparing channel layer thin film using pulse laser light deposition, laser energy used is
200mJ, frequency are 5Hz；2）The thickness of metal electrode is 10 ~ 150nm；3）Flexible ionic gel thickness of insulating layer is 20
~500μm.To avoid repeating, these parameters will not repeat in embodiment.
Fig. 2 is the pictorial diagram of solid flexible ionic gel used in the present invention, it can be seen that the flexibility ionic gel film has
There is good flexibility, and can cut.The preparation method of ionic gel used is as follows in the present invention：It selects and is associated with electronics oxide
Good high-purity ionic liquid methyl-diethyl-(2- methoxyethyls) the ammonium tetrafluoroborate of chemical compatibility（DEME-BF4）With
High molecular polymer vinylidene fluoride-hexafluoropropylene copolymer（P(VDF-HFP)）And anhydrous propanone, three in mass ratio 1:4:7
Prepare clear solution.Nitrogen protection atmosphere, drying environment in, after transparency liquid spin coating on a glass substrate, place
In vacuum drying chamber, it is dried in vacuo 24 hours at a temperature of 70 DEG C, prepares transferable ionic gel film.Institute in the present invention
All it is to be obtained by the above method with ionic gel, to avoid repeating, preparation process will not repeat in embodiment.
Fig. 3 is a kind of I of thin film transistor (TFT) obtained in embodiment 2D-VGSFigure, it can be seen that by the grid for applying 2.5V
The rising of 3 orders of magnitude of source-drain current can be realized in pole tension.
Embodiment 1
It is a kind of using ionic gel as the preparation method of the flexible thin-film transistor of insulating layer, include the following steps：
Step 1：Natural mica piece flexible substrate is removed using blade or adhesive tape, obtain mica sheet has natural atom
Grade is smooth（001）Cleavage surface, surface roughness be no more than 1nm；
Step 2：The mica sheet overlying obtained in step 1 covers the hollow out metal mask for being carved with different length-width ratio channel layer shapes
Version simultaneously places it in the cavity of impulse laser deposition system, then sinks in room temperature, oxygen pressure 1Pa, 6000 pulse numbers
Product goes out amorphous IGZO films, finally by noncrystal membrane at a temperature of 400 DEG C, in 5 × 104The oxygen pressure of Pa carries out moving back for 1 ~ 3h
Fire processing, you can it is thin to obtain the channel layer IGZO that length is 100 ~ 2000 μm, width is 100 ~ 500 μm, thickness is 35 ~ 45nm
Film.
Step 3：On the mica sheet substrate with IGZO thin film channel layers obtained in step 2 electricity is carved in alignment covering
The hollow out metal mask version of pole shape prepares the source and drain with two end in contact of channel layer then by it in thermal evaporation instrument cavity
Metal gates pole metal source-drain electrode and be isolated with channel layer；
Step 4：The solid flexible ionic gel film prepared is cut according to required shape size, is then covered in
It is in contact on IGZO thin film channel layers and with metal gates；It can be obtained flexible thin-film transistor of the present invention.
Embodiment 2
It is a kind of using ionic gel as the preparation method of the flexible thin-film transistor of insulating layer, include the following steps：
Step 1：Natural mica piece flexible substrate is removed using blade or adhesive tape, obtain mica sheet has natural atom
Grade is smooth（001）Cleavage surface, surface roughness be no more than 1nm；
Step 2：The mica sheet overlying obtained in step 1 covers the hollow out metal mask for being carved with different length-width ratio channel layer shapes
Version simultaneously places it in the cavity of impulse laser deposition system, then sinks in room temperature, oxygen pressure 1Pa, 12000 pulse numbers
Product goes out amorphous IGZO films, finally by noncrystal membrane at a temperature of 300 DEG C, in 5 × 104The oxygen pressure of Pa carries out moving back for 1 ~ 3h
Fire processing, you can it is thin to obtain the channel layer IGZO that length is 100 ~ 2000 μm, width is 100 ~ 500 μm, thickness is 85 ~ 95nm
Film.
Step 3：On the mica sheet substrate with IGZO thin film channel layers obtained in step 2 electricity is carved in alignment covering
The hollow out metal mask version of pole shape prepares the source and drain with two end in contact of channel layer then by it in thermal evaporation instrument cavity
Metal gates pole metal source-drain electrode and be isolated with channel layer；
Step 4：The solid flexible ionic gel film prepared is cut according to required shape size, is then covered in
It is in contact on IGZO thin film channel layers and with metal gates；It can be obtained flexible thin-film transistor of the present invention.
Embodiment 3
It is a kind of using ionic gel as the preparation method of the flexible thin-film transistor of insulating layer, include the following steps：
Step 1：Natural mica piece flexible substrate is removed using blade or adhesive tape, obtain mica sheet has natural atom
Grade is smooth（001）Cleavage surface, surface roughness be no more than 1nm；
Step 2：The mica sheet overlying obtained in step 1 covers the hollow out metal mask for being carved with different length-width ratio channel layer shapes
Version simultaneously places it in the cavity of impulse laser deposition system, then sinks in room temperature, oxygen pressure 5Pa, 12000 pulse numbers
Product goes out amorphous IGZO films, finally by noncrystal membrane 2000At a temperature of C, in 5 × 104The oxygen pressure of Pa carries out moving back for 1 ~ 3h
Fire processing, you can it is thin to obtain the channel layer IGZO that length is 100 ~ 2000 μm, width is 100 ~ 500 μm, thickness is 85 ~ 95nm
Film.
Step 3：On the mica sheet substrate with IGZO thin film channel layers obtained in step 2 electricity is carved in alignment covering
The hollow out metal mask version of pole shape prepares the source and drain with two end in contact of channel layer then by it in thermal evaporation instrument cavity
Metal gates pole metal source-drain electrode and be isolated with channel layer；
Step 4：The solid flexible ionic gel film prepared is cut according to required shape size, is then covered in
It is in contact on IGZO thin film channel layers and with metal gates；It can be obtained flexible thin-film transistor of the present invention.
Embodiment 4
It is a kind of using ionic gel as the preparation method of the flexible thin-film transistor of insulating layer, include the following steps：
Step 1：Natural mica piece flexible substrate is removed using blade or adhesive tape, obtain mica sheet has natural atom
Grade is smooth（001）Cleavage surface, surface roughness be no more than 1nm；
Step 2：The mica sheet overlying obtained in step 1 covers the hollow out metal mask for being carved with different length-width ratio channel layer shapes
Version simultaneously places it in the cavity of impulse laser deposition system, then sinks in room temperature, oxygen pressure 5Pa, 18000 pulse numbers
Product goes out amorphous IGZO films, finally by noncrystal membrane at a temperature of 500 DEG C, in 5 × 104The oxygen pressure of Pa carries out moving back for 1 ~ 3h
Fire processing, you can it is thin to obtain the channel layer IGZO that length is 100 ~ 2000 μm, width is 100 ~ 500 μm, thickness is 130 ~ 150nm
Film.
Step 3：On the mica sheet substrate with IGZO thin film channel layers obtained in step 2 electricity is carved in alignment covering
The hollow out metal mask version of pole shape prepares the source and drain with two end in contact of channel layer then by it in thermal evaporation instrument cavity
Metal gates pole metal source-drain electrode and be isolated with channel layer；
Step 4：The solid flexible ionic gel film prepared is cut according to required shape size, is then covered in
It is in contact on IGZO thin film channel layers and with metal gates；It can be obtained flexible thin-film transistor of the present invention.
Embodiment 5
It is a kind of using ionic gel as the preparation method of the flexible thin-film transistor of insulating layer, include the following steps：
Step 1：Natural mica piece flexible substrate is removed using blade or adhesive tape, obtain mica sheet has natural atom
Grade is smooth（001）Cleavage surface, surface roughness be no more than 1nm；
Step 2：The mica sheet overlying obtained in step 1 covers the hollow out metal mask for being carved with different length-width ratio channel layer shapes
Version simultaneously places it in the cavity of impulse laser deposition system, then sinks in room temperature, oxygen pressure 10Pa, 1000 pulse numbers
Product goes out amorphous IGZO films, finally by noncrystal membrane at a temperature of 300 DEG C, in 5 × 104The oxygen pressure of Pa carries out moving back for 1 ~ 3h
Fire processing, you can it is thin to obtain the channel layer IGZO that length is 100 ~ 2000 μm, width is 100 ~ 500 μm, thickness is 10 ~ 20nm
Film.
Step 3：On the mica sheet substrate with IGZO thin film channel layers obtained in step 2 electricity is carved in alignment covering
The hollow out metal mask version of pole shape prepares the source and drain with two end in contact of channel layer then by it in thermal evaporation instrument cavity
Metal gates pole metal source-drain electrode and be isolated with channel layer；
Step 4：The solid flexible ionic gel film prepared is cut according to required shape size, is then covered in
It is in contact on IGZO thin film channel layers and with metal gates；It can be obtained flexible thin-film transistor of the present invention.
Embodiment 6
It is a kind of using ionic gel as the preparation method of the flexible thin-film transistor of insulating layer, include the following steps：
Step 1：Natural mica piece flexible substrate is removed using blade or adhesive tape, obtain mica sheet has natural atom
Grade is smooth（001）Cleavage surface, surface roughness be no more than 1nm；
Step 2：The mica sheet overlying obtained in step 1 covers the hollow out metal mask for being carved with different length-width ratio channel layer shapes
Version simultaneously places it in the cavity of impulse laser deposition system, then sinks in room temperature, oxygen pressure 10Pa, 6000 pulse numbers
Product goes out amorphous IGZO films, finally by noncrystal membrane at a temperature of 400 DEG C, in 5 × 104The oxygen pressure of Pa carries out moving back for 1 ~ 3h
Fire processing, you can it is thin to obtain the channel layer IGZO that length is 100 ~ 2000 μm, width is 100 ~ 500 μm, thickness is 35 ~ 45nm
Film.
Step 3：On the mica sheet substrate with IGZO thin film channel layers obtained in step 2 electricity is carved in alignment covering
The hollow out metal mask version of pole shape prepares the source and drain with two end in contact of channel layer then by it in thermal evaporation instrument cavity
Metal gates pole metal source-drain electrode and be isolated with channel layer；
Step 4：The solid flexible ionic gel film prepared is cut according to required shape size, is then covered in
It is in contact on IGZO thin film channel layers and with metal gates；It can be obtained flexible thin-film transistor of the present invention.
Embodiment 7
It is a kind of using ionic gel as the preparation method of the flexible thin-film transistor of insulating layer, include the following steps：
Step 1：Natural mica piece flexible substrate is removed using blade or adhesive tape, obtain mica sheet has natural atom
Grade is smooth（001）Cleavage surface, surface roughness be no more than 1nm；
Step 2：The mica sheet overlying obtained in step 1 covers the hollow out metal mask for being carved with different length-width ratio channel layer shapes
Version simultaneously places it in the cavity of impulse laser deposition system, then sinks in room temperature, oxygen pressure 15Pa, 1000 pulse numbers
Product goes out amorphous IGZO films, finally by noncrystal membrane at a temperature of 200 DEG C, in 5 × 104The oxygen pressure of Pa carries out moving back for 1 ~ 3h
Fire processing, you can it is thin to obtain the channel layer IGZO that length is 100 ~ 2000 μm, width is 100 ~ 500 μm, thickness is 10 ~ 20nm
Film.
Step 3：On the mica sheet substrate with IGZO thin film channel layers obtained in step 2 electricity is carved in alignment covering
The hollow out metal mask version of pole shape prepares the source and drain with two end in contact of channel layer then by it in thermal evaporation instrument cavity
Metal gates pole metal source-drain electrode and be isolated with channel layer；
Step 4：The solid flexible ionic gel film prepared is cut according to required shape size, is then covered in
It is in contact on IGZO thin film channel layers and with metal gates；It can be obtained flexible thin-film transistor of the present invention.
Embodiment 8
It is a kind of using ionic gel as the preparation method of the flexible thin-film transistor of insulating layer, include the following steps：
Step 1：Natural mica piece flexible substrate is removed using blade or adhesive tape, obtain mica sheet has natural atom
Grade is smooth（001）Cleavage surface, surface roughness be no more than 1nm；
Step 2：The mica sheet overlying obtained in step 1 covers the hollow out metal mask for being carved with different length-width ratio channel layer shapes
Version simultaneously places it in the cavity of impulse laser deposition system, then under room temperature, oxygen pressure 15Pa, 18000 pulse numbers
Amorphous IGZO films are deposited, finally by noncrystal membrane at a temperature of 500 DEG C, in 5 × 104The oxygen pressure of Pa carries out 1 ~ 3h's
Annealing, you can obtain the channel layer IGZO that length is 100 ~ 2000 μm, width is 100 ~ 500 μm, thickness is 130 ~ 150nm
Film.
Step 3：On the mica sheet substrate with IGZO thin film channel layers obtained in step 2 electricity is carved in alignment covering
The hollow out metal mask version of pole shape prepares the source and drain with two end in contact of channel layer then by it in thermal evaporation instrument cavity
Metal gates pole metal source-drain electrode and be isolated with channel layer；
Step 4：The solid flexible ionic gel film prepared is cut according to required shape size, is then covered in
It is in contact on IGZO thin film channel layers and with metal gates；It can be obtained flexible thin-film transistor of the present invention.
Claims (11)
1. a kind of flexible thin-film transistor based on ionic gel gate insulating layer, it is characterised in that：The flexible thin-film transistor
Including：Natural mica piece flexible substrate；The channel layer thin film being grown on the substrate；It is deposited on described with channel layer thin film
Mica substrate on, with the source-drain electrode of two end in contact of channel layer and the grid being isolated with channel layer；Be pasted on channel layer and with
The flexible ionic gel insulating layer that grid is in contact.
2. flexible thin-film transistor according to claim 1, it is characterised in that：The natural mica piece flexible substrate is white
Mica, biotite or phlogopite.
3. flexible thin-film transistor according to claim 1, it is characterised in that：The channel layer thin film is IGZO films, thickness
For 10 ~ 150nm, width is 100 ~ 500 μm, and length is 100 ~ 2000 μm.
4. flexible thin-film transistor according to claim 1, it is characterised in that：The source electrode, drain electrode and grid are metal
Electrode, thickness are 10 ~ 150nm.
5. flexible thin-film transistor according to claim 1, it is characterised in that：The flexibility ionic gel thickness of insulating layer is 20
~500μm。
6. a kind of preparation method of the flexible thin-film transistor based on ionic gel gate insulating layer, it is characterised in that：This method
Include the following steps：
Step 1：The stripping of natural mica piece flexible substrate and surface cleaning；
Step 2：On the substrate that step 1 obtains, IGZO films are prepared as channel layer；
Step 3：On the substrate with channel layer thin film that step 2 obtains, prepare and the source-drain electrode of two end in contact of channel layer gold
The grid for belonging to source-drain electrode and being isolated with channel layer；
Step 4：The preparation of transferable solid flexible ionic gel film；
Step 5：The solid flexible ionic gel film transfer obtained in step 4 is affixed on channel layer, and is in contact with grid.
7. the preparation method of the flexible thin-film transistor according to claim 6 based on ionic gel gate insulating layer,
It is characterized in that：After natural mica piece flexible substrate in step 1 is stripped and surface cleaning, surface roughness is no more than 1nm.
8. the preparation method of the flexible thin-film transistor according to claim 6 based on ionic gel gate insulating layer,
It is characterized in that：The detailed process that IGZO films are prepared in step 2 as channel layer is as follows：First described stripped clear with surface
It is carved with the hollow out metal mask version of different length and width in mica substrate after clean, in covering and places it in pulse laser and sinks
In the cavity of product system；Then amorphous IGZO films are deposited using impulse laser deposition system, wherein target used is mole
Compare In: Ga: Zn=1:1:1 IGZO ceramic targets, laser energy 200mJ, pulse frequency 5Hz, pulse number 1000
~ 18000, depositing temperature is room temperature, and deposition oxygen pressure is 1 ~ 15Pa；The finally temperature by the noncrystal membrane deposited at 200 ~ 500 DEG C
Under degree, in 5 × 104The oxygen pressure of Pa carries out the annealing of 1 ~ 3h to get to the channel layer of different length, width and thickness
IGZO films.
9. the preparation method of the flexible thin-film transistor according to claim 6 based on ionic gel gate insulating layer,
It is characterized in that：Metal source, drain electrode and grid in step 3 are to utilize and the hollow out metal for being carved with different length and width
What mask plate matched is carved with the hollow out metal mask version of electrode shape, is prepared using metal fever evaporimeter.
10. the preparation method of the flexible thin-film transistor according to claim 6 based on ionic gel gate insulating layer,
It is characterized in that, the preparation detailed process of the transferable solid flexible ionic gel film in step 4 is as follows：It selects and is associated with first
Good high-purity ionic liquid methyl-diethyl-(2- methoxyethyls) the ammonium tetrafluoroborate of electronics oxide chemistry compatibility
（DEME-BF4）With high molecular polymer vinylidene fluoride-hexafluoropropylene copolymer（P(VDF-HFP)）And anhydrous propanone, three
In mass ratio 1:4:7 prepare clear solution；Then nitrogen protection atmosphere, drying environment in, transparency liquid is spin-coated on
It after in glass substrate, is positioned in vacuum drying chamber, is dried in vacuo 24 hours, that is, prepares transferable at a temperature of 70 DEG C
Solid flexible ionic gel film.
11. the preparation method of the flexible thin-film transistor according to claim 6 based on ionic gel gate insulating layer,
It is characterized in that：Solid flexible ionic gel film in step 5 is cut randomly, and channel layer can be completely covered, and can be with gold
Belong to grid to be connected.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109256466A (en) * | 2018-08-16 | 2019-01-22 | 肇庆市华师大光电产业研究院 | A kind of memory device and preparation method thereof for the flexible organic non-volatile that the low-voltage high speed based on muscovite mica substrate is erasable |
| CN109950319A (en) * | 2019-03-04 | 2019-06-28 | 华东师范大学 | A kind of vacuum meter and its working method |
| CN111128728A (en) * | 2019-12-13 | 2020-05-08 | 清华大学 | Stretchable transistor and preparation method thereof |
| CN114583050A (en) * | 2022-02-18 | 2022-06-03 | 电子科技大学 | Stretchable organic electrochemical transistor and preparation method thereof |
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| US20080191200A1 (en) * | 2007-02-08 | 2008-08-14 | Regents Of The University Of Minnesota | Ion gels and electronic devices utilizing ion gels |
| US20170323945A1 (en) * | 2014-10-21 | 2017-11-09 | Nokia Technologies Oy | A multilayer graphene composite |
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| US20080191200A1 (en) * | 2007-02-08 | 2008-08-14 | Regents Of The University Of Minnesota | Ion gels and electronic devices utilizing ion gels |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109256466A (en) * | 2018-08-16 | 2019-01-22 | 肇庆市华师大光电产业研究院 | A kind of memory device and preparation method thereof for the flexible organic non-volatile that the low-voltage high speed based on muscovite mica substrate is erasable |
| CN109950319A (en) * | 2019-03-04 | 2019-06-28 | 华东师范大学 | A kind of vacuum meter and its working method |
| CN109950319B (en) * | 2019-03-04 | 2020-07-14 | 华东师范大学 | Vacuum gauge and working method thereof |
| CN111128728A (en) * | 2019-12-13 | 2020-05-08 | 清华大学 | Stretchable transistor and preparation method thereof |
| CN111128728B (en) * | 2019-12-13 | 2021-08-31 | 清华大学 | Stretchable transistor and preparation method thereof |
| CN114583050A (en) * | 2022-02-18 | 2022-06-03 | 电子科技大学 | Stretchable organic electrochemical transistor and preparation method thereof |
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