CN108389891B - 一种双栅栅控可控硅整流器静电释放器件及其制作方法 - Google Patents
一种双栅栅控可控硅整流器静电释放器件及其制作方法 Download PDFInfo
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- CN108389891B CN108389891B CN201810052911.7A CN201810052911A CN108389891B CN 108389891 B CN108389891 B CN 108389891B CN 201810052911 A CN201810052911 A CN 201810052911A CN 108389891 B CN108389891 B CN 108389891B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 37
- 239000010703 silicon Substances 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title description 2
- 238000002347 injection Methods 0.000 claims abstract description 183
- 239000007924 injection Substances 0.000 claims abstract description 183
- 238000002955 isolation Methods 0.000 claims abstract description 123
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 120
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 120
- 239000001301 oxygen Substances 0.000 claims abstract description 120
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 76
- 229920005591 polysilicon Polymers 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 230000005669 field effect Effects 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 230000003071 parasitic effect Effects 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 230000015556 catabolic process Effects 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 238000003491 array Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 claims description 3
- 230000005012 migration Effects 0.000 claims description 3
- 238000013508 migration Methods 0.000 claims description 3
- 229910003978 SiClx Inorganic materials 0.000 claims description 2
- 210000001367 artery Anatomy 0.000 claims 2
- 210000003462 vein Anatomy 0.000 claims 2
- 238000012423 maintenance Methods 0.000 abstract description 10
- 229910052751 metal Inorganic materials 0.000 description 24
- 239000002184 metal Substances 0.000 description 24
- 230000003321 amplification Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000003199 nucleic acid amplification method Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- -1 phosphonium ion Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003902 lesion Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66363—Thyristors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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Abstract
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CN201810052911.7A CN108389891B (zh) | 2018-01-19 | 2018-01-19 | 一种双栅栅控可控硅整流器静电释放器件及其制作方法 |
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CN201810052911.7A CN108389891B (zh) | 2018-01-19 | 2018-01-19 | 一种双栅栅控可控硅整流器静电释放器件及其制作方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110289257A (zh) * | 2019-06-28 | 2019-09-27 | 湖南师范大学 | 一种双向增强型栅控可控硅静电保护器件及其制作方法 |
US11894363B2 (en) | 2020-04-03 | 2024-02-06 | Changxin Memory Technologies, Inc. | Semiconductor device with a doped well region |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110211956B (zh) * | 2019-06-28 | 2022-11-11 | 湖南师范大学 | 栅极增强型光控可控硅静电释放器件结构及其制作方法 |
CN110518010B (zh) * | 2019-08-29 | 2021-07-16 | 上海华力微电子有限公司 | 一种内嵌硅控整流器的pmos器件及其实现方法 |
CN111223855B (zh) * | 2019-11-19 | 2021-12-03 | 江南大学 | 一种利用栅隔离技术提高电路系统esd防护性能的方法 |
CN115513201B (zh) * | 2022-10-26 | 2024-06-04 | 湖南静芯微电子技术有限公司 | 高维持低阻均匀导通双向可控硅静电防护器件及制作方法 |
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CN1396662A (zh) * | 2001-07-09 | 2003-02-12 | 联华电子股份有限公司 | 绝缘层有硅的低电压触发硅控整流器及静电放电防护电路 |
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CN105655325A (zh) * | 2014-11-13 | 2016-06-08 | 旺宏电子股份有限公司 | 静电放电保护电路、结构及其制造方法 |
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TW473977B (en) * | 2000-10-27 | 2002-01-21 | Vanguard Int Semiconduct Corp | Low-voltage triggering electrostatic discharge protection device and the associated circuit |
US9768159B2 (en) * | 2015-08-19 | 2017-09-19 | Texas Instruments Incorporated | Electrostatic discharge protection device for high voltage |
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- 2018-01-19 CN CN201810052911.7A patent/CN108389891B/zh active Active
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CN1396662A (zh) * | 2001-07-09 | 2003-02-12 | 联华电子股份有限公司 | 绝缘层有硅的低电压触发硅控整流器及静电放电防护电路 |
US6737682B1 (en) * | 2002-07-30 | 2004-05-18 | Taiwan Semiconductor Manufacturing Company | High voltage tolerant and low voltage triggering floating-well silicon controlled rectifier on silicon-on-insulator for input or output |
KR20040082832A (ko) * | 2003-03-20 | 2004-09-30 | 주식회사 하이닉스반도체 | 반도체장치의 보호소자 |
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CN102315258A (zh) * | 2010-06-29 | 2012-01-11 | 上海宏力半导体制造有限公司 | 寄生晶闸管以及静电保护电路 |
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CN110289257A (zh) * | 2019-06-28 | 2019-09-27 | 湖南师范大学 | 一种双向增强型栅控可控硅静电保护器件及其制作方法 |
US11894363B2 (en) | 2020-04-03 | 2024-02-06 | Changxin Memory Technologies, Inc. | Semiconductor device with a doped well region |
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