CN108389801A - The method that one step photoetching process prepares metal-oxide semiconductor (MOS) and dielectric film - Google Patents
The method that one step photoetching process prepares metal-oxide semiconductor (MOS) and dielectric film Download PDFInfo
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- CN108389801A CN108389801A CN201810158142.9A CN201810158142A CN108389801A CN 108389801 A CN108389801 A CN 108389801A CN 201810158142 A CN201810158142 A CN 201810158142A CN 108389801 A CN108389801 A CN 108389801A
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- 238000000034 method Methods 0.000 title claims abstract description 43
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 32
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000001259 photo etching Methods 0.000 title claims abstract description 17
- 230000008569 process Effects 0.000 title claims abstract description 15
- 108010025899 gelatin film Proteins 0.000 claims abstract description 28
- 239000002243 precursor Substances 0.000 claims abstract description 16
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 238000002360 preparation method Methods 0.000 claims abstract description 11
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims abstract description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000005286 illumination Methods 0.000 claims abstract description 8
- 239000003431 cross linking reagent Substances 0.000 claims abstract description 6
- 230000035807 sensation Effects 0.000 claims abstract description 5
- 238000004528 spin coating Methods 0.000 claims abstract description 5
- 230000009471 action Effects 0.000 claims abstract description 4
- 235000019441 ethanol Nutrition 0.000 claims abstract description 4
- 239000003960 organic solvent Substances 0.000 claims abstract description 4
- 230000003760 hair shine Effects 0.000 claims abstract description 3
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 20
- CVBUKMMMRLOKQR-UHFFFAOYSA-N 1-phenylbutane-1,3-dione Chemical compound CC(=O)CC(=O)C1=CC=CC=C1 CVBUKMMMRLOKQR-UHFFFAOYSA-N 0.000 claims description 6
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 claims description 6
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims description 6
- OERNJTNJEZOPIA-UHFFFAOYSA-N zirconium nitrate Chemical compound [Zr+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O OERNJTNJEZOPIA-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 claims description 3
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 claims description 3
- KKKAMDZVMJEEHQ-UHFFFAOYSA-N [Sn].[N+](=O)(O)[O-] Chemical compound [Sn].[N+](=O)(O)[O-] KKKAMDZVMJEEHQ-UHFFFAOYSA-N 0.000 claims description 3
- 229940044658 gallium nitrate Drugs 0.000 claims description 3
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 claims description 3
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000012702 metal oxide precursor Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims 1
- 238000000059 patterning Methods 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 29
- 238000005516 engineering process Methods 0.000 description 5
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66045—Field-effect transistors
Abstract
The invention discloses the methods that a step photoetching process prepares metal-oxide semiconductor (MOS) and dielectric film, and the solution of preparation is prepared gel film by sol-gel technique spin coating；The gel film prepared is placed under mask plate, by ultraviolet light, wherein oxide semiconductor precursor gel film light at room temperature shines, and oxide dielectric precursor gel film, which is placed on hot plate, to be irradiated；Gel film after photo-irradiation treatment is placed in the organic solvents such as ethyl alcohol or ethylene glycol monomethyl ether and is developed, using the crosslinked action of light sensation crosslinking agent after illumination, the region of illumination does not dissolve in developer solution, achievees the purpose that display pattern；By metal oxide semiconductor films and metal oxide testa film sequentially pattern annealing, the TFT of complete pattern is integrated.The beneficial effects of the invention are as follows the large area production costs for significantly reducing patterned film, and the patterning realized is more clear accurately, resolution ratio higher.
Description
Technical field
The invention belongs to technical field of lithography, are related to a kind of by one step photoetching process of collosol and gel preparation pattern metal oxygen
The method of compound (semiconductor and dielectric) film and integrated thin-film field-effect tube.
Background technology
With flourishing for flat panel display, the thin film field effect transistor as FPD key switch device
(TFT) technology of preparing has also obtained great development, reaches its maturity.Metal-oxide semiconductor (MOS) (such as indium oxide (In2O3), oxidation
Zinc (Zn2O3), indium gallium zinc oxide (IGZO)) due to its energy gap it is larger, the advantage of transparent semiconductor device can be prepared,
Become research hotspot in recent years, successfully the TFT of metal oxide is applied in currently popular FPD.Generally,
It includes magnetron sputtering, pulsed laser deposition, physical vapour deposition (PVD), chemical gas that tradition, which prepares metal oxide semiconductor films method,
The mutually evaporating deposition techniques such as deposition, spray pyrolysis, prepare the expensive vacuum equipment of needs and production efficiency is relatively low, also not
It is produced conducive to large area.For it is above-mentioned the problems such as, sol-gel technique, inkjet printing technology comes into being.Inkjet printing technology
By similar printing principle into, marking ink is changed to the precursor solution of metal oxide, it is efficient, can large area production,
But its resolution ratio is relatively low, and prepare film thickness will not too thin (micron level), can limit
The performance of TFT.In contrast, the precursor solution that sol-gel technique passes through spin coating metal oxide on substrate
Method, can be prepared with large area, and thickness is down to tens nanometers of uniform noncrystal membrane, manufacturing cost compare it is minimum, and
It can be with the ratio of each element in accuracy controlling film.
If but TFT prepared by traditional sol-gel technique can cause the leakage current of device not by patterning
Larger disadvantage.If patterned using traditional photolithographic techniques, and can be during photoresist developing to preparing
Metal-oxide film cause to damage and destroy, (such as ON state current reduces the performance to reduce device, and leakage current is larger
Deng).
Invention content
The purpose of the present invention is to provide the methods that a step photoetching process prepares metal-oxide semiconductor (MOS) and dielectric film, originally
Advantageous effect of the invention is to significantly reduce the large area production cost of patterned film, and the patterning realized is more clear
It is clear accurate, resolution ratio higher.
The technical solution adopted in the present invention is to follow the steps below：
Step 1：The preparation of metal oxide precursor solution；
Step 2：The solution of preparation is prepared into gel film by sol-gel technique spin coating；
Step 3：The gel film prepared is placed under mask plate, by ultraviolet light, wherein oxide is partly led
Body precursor gel film light at room temperature shines, and oxide dielectric precursor gel film, which is placed on hot plate, to be irradiated；
Step 4：Gel film after photo-irradiation treatment is placed in the organic solvents such as ethyl alcohol or ethylene glycol monomethyl ether and is developed, is utilized
The region of the crosslinked action of light sensation crosslinking agent after illumination, illumination does not dissolve in developer solution, reaches patterned purpose；
Step 5：Patterned gel film carries out the high temperature anneal in later stage；By metal oxide semiconductor films and
Metal oxide testa film sequentially pattern annealing integrates the TFT of complete pattern.
Further, in step 1 by indium nitrate, zinc nitrate, nitric acid tin, gallium nitrate, aluminum nitrate, hafnium chloride, zirconium nitrate etc. does
It is added in ethylene glycol monomethyl ether solvent for solute, prepares the solution of 0.2M respectively, and be separately added into the levulinic of 1.0M in the solution
Ketone or benzoyl acetone and nitric acid prepare clear solution.
Further, it is 9 by indium tin molar ratio in step 1：1 is added as solute in butyl glycol ether solvent, prepares
The solution of 0.2M, and it is separately added into the acetylacetone,2,4-pentanedione or benzoyl acetone and nitric acid of 1.0M in the solution, prepare clear solution.
Further, ultraviolet wavelength 183nm, 254nm or 365nm in step 3.
Further, hot plate temperature is 110 DEG C in step 3.
Further, the 230 DEG C of annealing of oxide semiconductor precursor gel film, oxide dielectric precursor are solidifying in step 5
The 250 DEG C of annealing of glue film.
Description of the drawings
Fig. 1 is patterning metal oxide film oxidation indium schematic diagram；
Fig. 2 is TFT transfer curves；
Fig. 3 is metal-oxide film zirconium oxide pattern；
Fig. 4 is the current density schematic diagram of patterning metal oxide film oxidation zirconium；
Fig. 5 is the TFT transfer curves that patterned zirconium oxide is dielectric layer.
Specific implementation mode
The present invention is described in detail With reference to embodiment.
Embodiment：
1, the preparation of metal oxide precursor solution is respectively with indium nitrate, zinc nitrate, nitric acid tin, gallium nitrate, aluminum nitrate,
Hafnium chloride, the inorganic salts such as zirconium nitrate are that solute is added in ethylene glycol monomethyl ether solvent, prepare the solution of 0.2M, and distinguish in the solution
The acetylacetone,2,4-pentanedione (or benzoyl acetone etc. has the crosslinking agent of light sensation property) and nitric acid that 1.0M is added (as oxidant and have
There are the crosslinking agents such as acetylacetone,2,4-pentanedione or the benzoyl acetone of reproducibility that exothermic redox reaction occurs, to reduce the solidifying of preparation
The annealing temperature in glue film later stage), prepare clear solution.
2, the solution of preparation is prepared into gel film by sol-gel technique spin coating.
3, the gel film prepared is placed under mask plate, by ultraviolet light (UV) (ultraviolet wavelength 183nm,
254nm, 365nm) irradiation 10min, wherein oxide semiconductor precursor gel film light at room temperature photograph, oxide dielectric precursor
Gel film, which is placed on 110 DEG C of hot plates, to be irradiated.
4, the gel film after photo-irradiation treatment is placed in the organic solvents such as ethyl alcohol or ethylene glycol monomethyl ether and is developed, utilize illumination
The region of the crosslinked action of light sensation crosslinking agent afterwards, illumination does not dissolve in developer solution, reaches patterned purpose.
5, patterned gel film carries out the high temperature anneal in later stage, and wherein oxide semiconductor precursor gel is thin
230 DEG C of annealing of film, the 250 DEG C of annealing of oxide dielectric precursor gel film.By metal oxide semiconductor films and metal oxygen
Compound dielectric film sequentially pattern annealing, you can the TFT of integrated complete pattern.
6, in addition, (indium tin molar ratio is by preparing indium tin oxide precursor solution：9 to 1) it, can also be used above-mentioned
Method realizes prepared by one step of solwution method of TFT patterning source and drain gate electrodes, and one step photoetching legal system of collosol and gel is utilized to realize
The TFT of standby complete pattern.
Fig. 1 is the patterning metal oxide prepared on silicon chip silicon dioxide substrate by one step photoetching process of collosol and gel
Film oxidation indium (In2O3) pattern, (most narrow place is 78.45 μm).Fig. 2 be Fig. 1 prepare with patterned indium oxide film for half
Conductor layer, silica are the TFT transfer curves of dielectric layer.Fig. 3 is by one step lithographic patterning method of collosol and gel in silicon chip
Metal-oxide film zirconium oxide (the Zr prepared on substrate2O3) pattern, (most narrow place is 120.55 μm).Fig. 4 is solidifying by colloidal sol
The patterning metal oxide film oxidation zirconium (Zr that one step photoetching process of glue is prepared in silicon chip substrate2O3) current density.Fig. 5
It is to prepare using patterned indium oxide film as semiconductor layer, patterned zirconium oxide (Zr2O3) shifted for the TFT of dielectric layer
Curve.
It is also an advantage of the present invention that：
1. compared to the method that vacuum prepares film, patterning metal oxide is prepared by one step photoetching process of collosol and gel
The cost reduction of (semiconductor and dielectric) film is many, it can be achieved that large area produces, and production efficiency is greatly improved.
It is patterned 2. being realized to sol-gel technique compared to traditional photoetching technique, passes through one step photoetching process of collosol and gel
It prepares patterning metal oxide (semiconductor and dielectric) film and realizes patterning, the film of preparation will not be damaged, and
And production preparation process is greatly simplified, greatly improve the large area production efficiency of patterned film, hence it is evident that reduce
Subsequent anneal temperatures significantly reduce the large area production cost of patterned film.
3. compared to inkjet printing technology, metal oxide is prepared by one step lithographic patterning method of collosol and gel and (is partly led
Body and dielectric) film thickness is thinner (reaching a few to tens of nanometers), and flatness is more preferable, and the patterning realized is more clear standard
Really, resolution ratio higher.
The above is only the better embodiment to the present invention, not makees limit in any form to the present invention
System, every any simple modification that embodiment of above is made according to the technical essence of the invention, equivalent variations and modification,
Belong in the range of technical solution of the present invention.
Claims (6)
1. the method that a step photoetching process prepares metal-oxide semiconductor (MOS) and dielectric film, it is characterised in that according to the following steps into
Row：
Step 1：The preparation of metal oxide precursor solution；
Step 2：The solution of preparation is prepared into gel film by sol-gel technique spin coating；
Step 3：The gel film prepared is placed under mask plate, by ultraviolet light, wherein before oxide semiconductor
Body gel film light at room temperature shines, and oxide dielectric precursor gel film, which is placed on hot plate, to be irradiated；
Step 4：Gel film after photo-irradiation treatment is placed in the organic solvents such as ethyl alcohol or ethylene glycol monomethyl ether and is developed, illumination is utilized
The region of the crosslinked action of light sensation crosslinking agent afterwards, illumination does not dissolve in developer solution, achievees the purpose that display pattern；
Step 5：Patterned gel film carries out the high temperature anneal in later stage；By metal oxide semiconductor films and metal
Oxide dielectric film sequentially pattern annealing integrates the TFT of complete pattern.
2. according to the method that a step photoetching process prepares metal-oxide semiconductor (MOS) and dielectric film described in claim 1, feature
It is：By indium nitrate in the step 1, zinc nitrate, nitric acid tin, gallium nitrate, aluminum nitrate, hafnium chloride, zirconium nitrate etc. is as solute
Be added ethylene glycol monomethyl ether solvent in, respectively prepare 0.2M solution, and be separately added into the solution 1.0M acetylacetone,2,4-pentanedione or
Benzoyl acetone and nitric acid prepare clear solution.
3. according to the method that a step photoetching process prepares metal-oxide semiconductor (MOS) and dielectric film described in claim 1, feature
It is：In the step 1 by indium tin molar ratio be 9：1 is added as solute in ethylene glycol monomethyl ether solvent, prepares the molten of 0.2M
Liquid, and it is separately added into the acetylacetone,2,4-pentanedione or benzoyl acetone and nitric acid of 1.0M in the solution, prepare clear solution.
4. according to the method that a step photoetching process prepares metal-oxide semiconductor (MOS) and dielectric film described in claim 1, feature
It is：Ultraviolet wavelength 183nm, 254nm or 365nm in the step 3.
5. according to the method that a step photoetching process prepares metal-oxide semiconductor (MOS) and dielectric film described in claim 1, feature
It is：Hot plate temperature is 110 DEG C in the step 3.
6. according to the method that a step photoetching process prepares metal-oxide semiconductor (MOS) and dielectric film described in claim 1, feature
It is：The 230 DEG C of annealing of oxide semiconductor precursor gel film, oxide dielectric precursor gel film in the step 5
250 DEG C of annealing.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810158142.9A CN108389801A (en) | 2018-02-25 | 2018-02-25 | The method that one step photoetching process prepares metal-oxide semiconductor (MOS) and dielectric film |
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| CN201810158142.9A CN108389801A (en) | 2018-02-25 | 2018-02-25 | The method that one step photoetching process prepares metal-oxide semiconductor (MOS) and dielectric film |
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| CN201810158142.9A Pending CN108389801A (en) | 2018-02-25 | 2018-02-25 | The method that one step photoetching process prepares metal-oxide semiconductor (MOS) and dielectric film |
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| CN111180310A (en) * | 2019-03-11 | 2020-05-19 | 广东聚华印刷显示技术有限公司 | Method for patterning metal oxide film and application |
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