CN108389536A - GOA detection circuits and detection method - Google Patents
GOA detection circuits and detection method Download PDFInfo
- Publication number
- CN108389536A CN108389536A CN201810176485.8A CN201810176485A CN108389536A CN 108389536 A CN108389536 A CN 108389536A CN 201810176485 A CN201810176485 A CN 201810176485A CN 108389536 A CN108389536 A CN 108389536A
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- China
- Prior art keywords
- goa
- unit
- tft
- thin film
- luminescence unit
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Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
Abstract
The invention discloses a kind of GOA detection circuits and detection methods, for detecting GOA circuits, GOA circuits include multiple cascade GOA units, the GOA detection circuits include the thin film transistor (TFT) and luminescence unit being series at after every level-one GOA unit, wherein, the grid of the thin film transistor (TFT) is connected with GOA unit, and drain electrode is connected with the anode of luminescence unit, and the source electrode of thin film transistor (TFT) and the cathode both ends of luminescence unit are applied with voltage respectively.Thin film transistor (TFT) and luminescence unit is added in the present invention after GOA unit, by the luminous situation of luminescence unit can detect when prime GOA unit export it is normal or abnormal, can precisely judge the exact position of GOA unit output abnormality on panel.
Description
Technical field
The present invention relates to circuit detection technique fields, more particularly to a kind of GOA detection circuits and detection method.
Background technology
Array substrate row drives (GOA, Gate Driver OnArray or Gate OnArray) circuit, is using existing
Thin film transistor liquid crystal display device (TFT-LCD) array (Array) processing procedure is by grid line (Gate) row scanning drive signal circuit production
In array substrate, to realize a technology of the type of drive progressively scanned to grid line.
GOA technologies can allow Gate circuits that can be integrated on panel, can save the circuit for providing grid potential signal in this way.
For flexible OLED display, due to needing to compensate threshold voltage VthWith mobility Mobility, thus need more multi-gate letter
Number, in this way, providing grid signal from external circuit becomes extremely difficult.The stability of GOA is also ten for panel simultaneously
Divide important.GOA circuits work in such a way that grade passes, if level-one goes wrong in GOA circuits, subsequent GOA outputs can also go out
It is now abnormal.
Therefore, in view of the above technical problems, it is necessary to which a kind of GOA detection circuits and detection method are provided.
Invention content
In order to overcome the deficiencies of the prior art, the purpose of the present invention is to provide a kind of GOA detection circuits and detection method, with
The exact position of GOA output abnormalities in detection panel.
To achieve the goals above, the technical solution that one embodiment of the invention provides is as follows：
A kind of GOA detection circuits, for detecting GOA circuits, GOA circuits include multiple cascade GOA units, the GOA
Detection circuit includes the thin film transistor (TFT) and luminescence unit being series at after every level-one GOA unit, wherein the thin film transistor (TFT)
Grid is connected with GOA unit, and drain electrode is connected with the anode of luminescence unit, the source electrode of thin film transistor (TFT) and the cathode two of luminescence unit
End is applied with voltage respectively.
As a further improvement on the present invention, source electrode one end of the thin film transistor (TFT) is applied with the first DC voltage VDD,
Cathode one end of luminescence unit is applied with the second DC voltage VSS。
As a further improvement on the present invention, the luminescence unit is OLED or LED.
As a further improvement on the present invention, the GOA detection circuits include：
First state, GOA unit output export low level, corresponding thin film transistor (TFT) and luminescence unit conducting when normal,
Luminescence unit shines；
Second state, when GOA unit output abnormality, do not export low level, and corresponding thin film transistor (TFT) and luminescence unit are cut
Only, luminescence unit does not shine.
The technical solution that another embodiment of the present invention provides is as follows：
A kind of GOA detection methods of GOA detection circuits, the GOA detection methods include：
GOA unit is scanned successively, output pulse signal；
Judge whether the luminescence unit after respective stages GOA unit shines, if so, judge that this grade of GOA unit output is normal,
If it is not, then judging this grade of GOA unit output abnormality.
As a further improvement on the present invention, when the GOA unit output abnormality, the GOA unit institute after this grade of GOA unit
Corresponding luminescence unit does not shine.
As a further improvement on the present invention, it when the GOA unit output is normal, exports as low level.
Thin film transistor (TFT) and luminescence unit is added in the present invention after GOA unit, can by the luminous situation of luminescence unit
Detection is normal or abnormal when the output of prime GOA unit, can precisely judge the exact position of GOA unit output abnormality on panel.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments described in invention, for those of ordinary skill in the art, without creative efforts,
Other drawings may also be obtained based on these drawings.
Fig. 1 is the schematic diagram of GOA detection circuits in the embodiment of the present invention 1.
Fig. 2 is the pulse signal waveform figure of GOA circuit outputs in the embodiment of the present invention 2.
Specific implementation mode
In order to make those skilled in the art more fully understand the technical solution in the present invention, below in conjunction with of the invention real
The attached drawing in example is applied, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described implementation
Example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
The every other embodiment that technical staff is obtained without making creative work, should all belong to protection of the present invention
Range.
The invention discloses a kind of GOA detection circuits, and for detecting GOA circuits, GOA circuits include multiple cascade GOA
Unit, GOA detection circuits include the thin film transistor (TFT) and luminescence unit being series at after every level-one GOA unit, wherein film crystal
The grid of pipe is connected with GOA unit, and drain electrode is connected with the anode of luminescence unit, the source electrode of thin film transistor (TFT) and the moon of luminescence unit
Pole both ends are applied with voltage respectively.
The invention also discloses a kind of GOA detection methods of GOA detection circuits, which includes：
GOA unit is scanned successively, output pulse signal；
Judge whether the luminescence unit after respective stages GOA unit shines, if so, judge that this grade of GOA unit output is normal,
If it is not, then judging this grade of GOA unit output abnormality.
Below in conjunction with specific embodiment, the invention will be further described.
Embodiment 1：
Join shown in Fig. 1, a kind of GOA detection circuits in the present embodiment, for detecting GOA circuits, GOA circuits include multiple
Cascade GOA unit, the GOA unit per level-one are used to charge to corresponding scan line, and the series of GOA unit is N, and AA is panel
Viewing area.
To be illustrated for FHD (full HD, Full High Definition) panel in the present embodiment, resolution ratio energy
Reach 1920*1080, including N=2160 grades of GOA units, GOA passes mode by grade and works.Wherein three are illustrated only in Fig. 1
Grade GOA unit, respectively (n+1)th grade, n grades, n-1 grades.
GOA detection circuits in the present invention include the thin film transistor (TFT) and luminescence unit being series at after every level-one GOA unit.
Specifically, thin film transistor (TFT) T3 and luminescence unit OLED3, thin film transistor (TFT) T3 are in series with after (n+1)th grade of GOA unit
Grid be connected with (n+1)th grade of GOA unit output end, the drain electrode of thin film transistor (TFT) T3 is connected with the anode of luminescence unit OLED3,
The source electrode of thin film transistor (TFT) T3 and the cathode both ends of luminescence unit OLED3 are applied with the first DC voltage V respectivelyDDWith the second direct current
Voltage VSS。
Be in series with thin film transistor (TFT) T2 and luminescence unit OLED2 after n-th grade of GOA unit, the grid of thin film transistor (TFT) T2 with
N-th grade of GOA unit output end is connected, and the drain electrode of thin film transistor (TFT) T2 is connected with the anode of luminescence unit OLED2, thin film transistor (TFT)
The source electrode of T2 and the cathode both ends of luminescence unit OLED2 are applied with the first DC voltage V respectivelyDDWith the second DC voltage VSS。
Thin film transistor (TFT) T1 and luminescence unit OLED1, the grid of thin film transistor (TFT) T1 are in series with after (n-1)th grade of GOA unit
It is connected with (n-1)th grade of GOA unit output end, the drain electrode of thin film transistor (TFT) T1 is connected with the anode of luminescence unit OLED1, and film is brilliant
The source electrode of body pipe T1 and the cathode both ends of luminescence unit OLED1 are applied with the first DC voltage V respectivelyDDWith the second DC voltage
VSS。
It should be understood that above description is carried out only for the detection circuit of (n+1)th grade, n grades, n-1 grades GOA unit, it is whole
A GOA detection circuits are correspondingly provided with thin film transistor (TFT) after N grades of GOA units for entire GOA circuits, i.e., and shine single
Member, to realize the detection of all GOA units.
Wherein, the luminescence unit in the present embodiment is illustrated by taking OLED as an example, in other embodiments, luminescence unit
LED etc. may be used, as long as can realize that the luminescence unit of light-emitting flash belongs to the range that the present invention is protected.
When GOA detection circuits are detected, GOA unit includes normal condition and abnormality, respectively：
First state (normal condition), GOA unit output export low level when normal, corresponding thin film transistor (TFT) and shine
Unit is connected, and luminescence unit shines；
Second state (abnormality), when GOA unit output abnormality, do not export low level, corresponding thin film transistor (TFT) and hair
Light unit is ended, and luminescence unit does not shine.
Embodiment 2：
GOA detection methods in the present embodiment are carried out according to the GOA detection circuits in embodiment 1, GOA detection method packets
It includes：
GOA unit is scanned successively, output pulse signal；
Judge whether the luminescence unit after respective stages GOA unit shines, if so, judge that this grade of GOA unit output is normal,
If it is not, then judging this grade of GOA unit output abnormality.
Wherein, when GOA unit output abnormality, the luminescence unit corresponding to GOA unit after this grade of GOA unit is not sent out
Light.
For example, Fig. 2 is the pulse signal waveform figure that GOA unit exports in the present embodiment, including 3 stages：
Stage 1 is low level in the output of stage 1, thin film transistor (TFT) T3 is beaten at this time when (n+1)th grade of GOA unit output is normal
It opens, thin film transistor (TFT) T2 and T1 cut-off, VDDThe anode of luminescence unit OLED3 is passed to by the source electrode of thin film transistor (TFT) T3, this
When luminescence unit OLED3 shine, luminescence unit OLED2 and OLED1 do not shine.
Stage 2 is low level in the output of stage 2, thin film transistor (TFT) T2 is beaten at this time when n-th grade of GOA unit output is normal
It opens, thin film transistor (TFT) T3 and T1 cut-off, VDDThe anode of luminescence unit OLED2 is passed to by the source electrode of thin film transistor (TFT) T2, this
When luminescence unit OLED2 shine, luminescence unit OLED3 and OLED1 do not shine.
Stage 3, when (n-1)th grade of GOA unit output abnormality, low level was not exported in the stage 3, at this time thin film transistor (TFT) T1 without
Method is opened, VDDThe anode of luminescence unit OLED1 can not be passed to by the source electrode of thin film transistor (TFT) T1, at this time luminescence unit
OLED1 shines.
Such as in the stage 3, when (n-1)th grade of GOA unit output is normal, in the stage 3, output should be low level, and film is brilliant at this time
Body pipe T1 is opened, thin film transistor (TFT) T3 and T2 cut-off, VDDIt is passed to luminescence unit OLED1's by the source electrode of thin film transistor (TFT) T1
Anode, luminescence unit OLED1 is luminous at this time, and luminescence unit OLED3 and OLED2 do not shine.
In this way, by the detection in 1~stage of stage 3, it is possible to determine that (n+1)th grade and the output of n-th grade of GOA unit it is normal, the
N-1 grades of GOA unit output abnormalities.
Further, it realizes that N grades~the 1st grade GOA unit exports normal or abnormal detection in the above manner, scans
Sequence can successively be scanned to the 1st grade from N grades.
Such as in FHD panels, in 2160 grades of GOA unit transmittance process, according to this mode, when GOA unit output is normal,
The OLED that GOA unit is connected can constantly flicker, and non-luminous shape is presented in the OLED that the GOA unit of output abnormality is connected
State, and from the GOA unit of abnormal GOA unit backward because grade biography goes wrong, the OLED that follow-up GOA unit is connected can not also be sent out
Light.The detection for carrying out GOA circuits by this method, precisely to judge the exact position of GOA unit output abnormality on panel.
Compared with prior art, the invention has the advantages that：
Thin film transistor (TFT) and luminescence unit are added after GOA unit, can be detected and be worked as by the luminous situation of luminescence unit
The output of prime GOA unit is normal or abnormal, can precisely judge the exact position of GOA unit output abnormality on panel；
GOA detection circuits and GOA circuits are combined together, GOA quantity can be reduced, is conducive to the design of narrow frame.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case of without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Profit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent requirements of the claims
Variation is included within the present invention.Any reference signs in the claims should not be construed as limiting the involved claims.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiment being appreciated that.
Claims (7)
1. a kind of GOA detection circuits, for detecting GOA circuits, GOA circuits include multiple cascade GOA units, and feature exists
In the GOA detection circuits include being series at the thin film transistor (TFT) and luminescence unit of every level-one GOA unit, wherein the film
The grid of transistor is connected with GOA unit, and the drain electrode of the thin film transistor (TFT) is connected with the anode of luminescence unit, and the film is brilliant
The source electrode of body pipe and the cathode both ends of luminescence unit are applied with voltage respectively.
2. GOA detection circuits according to claim 1, which is characterized in that source electrode one end of the thin film transistor (TFT) applies
There is the first DC voltage VDD, cathode one end of luminescence unit is applied with the second DC voltage VSS。
3. GOA detection circuits according to claim 1, which is characterized in that the luminescence unit is OLED or LED.
4. GOA detection circuits according to claim 1, which is characterized in that the GOA detection circuits include：
First state, GOA unit output export low level, corresponding thin film transistor (TFT) and luminescence unit conducting, shine when normal
Unit shines；
Second state, when GOA unit output abnormality, do not export low level, corresponding thin film transistor (TFT) and luminescence unit cut-off, hair
Light unit does not shine.
5. a kind of GOA detection methods of GOA detection circuits as described in any one of claims 1 to 4, which is characterized in that institute
Stating GOA detection methods includes：
GOA unit is scanned successively, output pulse signal；
Judge whether the luminescence unit after respective stages GOA unit shines, if so, judge that this grade of GOA unit output is normal, if
It is no, then judge this grade of GOA unit output abnormality.
6. GOA detection methods according to claim 5, which is characterized in that when the GOA unit output abnormality, this grade of GOA
The luminescence unit corresponding to GOA unit after unit does not shine.
7. GOA detection methods according to claim 5, which is characterized in that when GOA unit output is normal, exports and be
Low level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810176485.8A CN108389536A (en) | 2018-03-03 | 2018-03-03 | GOA detection circuits and detection method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810176485.8A CN108389536A (en) | 2018-03-03 | 2018-03-03 | GOA detection circuits and detection method |
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Family
ID=63070269
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| CN201810176485.8A Pending CN108389536A (en) | 2018-03-03 | 2018-03-03 | GOA detection circuits and detection method |
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| CN111445841A (en) * | 2020-05-14 | 2020-07-24 | 京东方科技集团股份有限公司 | Display device and detection method thereof |
| WO2022099994A1 (en) * | 2020-11-11 | 2022-05-19 | 重庆康佳光电技术研究院有限公司 | Detection method and detection structure for display backplane |
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Application publication date: 20180810 |