CN106251798A - OLED display drive circuit defect inspection method - Google Patents
OLED display drive circuit defect inspection method Download PDFInfo
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- CN106251798A CN106251798A CN201610643919.1A CN201610643919A CN106251798A CN 106251798 A CN106251798 A CN 106251798A CN 201610643919 A CN201610643919 A CN 201610643919A CN 106251798 A CN106251798 A CN 106251798A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
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Abstract
The present invention provides a kind of OLED display drive circuit defect inspection method, the method is by detecting the voltage of secondary nodal point, and according to the voltage of secondary nodal point whether in default normalization voltage range, judge described OLED display drive circuit whether existing defects, the short circuit in OLED display drive circuit and open defect can be detected quickly and accurately, and the method utilizes the external voltage of OLED display to compensate framework realization, need not additionally buy detection equipment, there is no equipment cost, OLED display drive circuit defects detection efficiency can be promoted, reduce OLED display drive circuit defects detection cost, ensure product quality.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to a kind of OLED display drive circuit defect inspection method.
Background technology
Flat panel display device has that fuselage is thin, power saving, the many merits such as radiationless, be widely used.Existing
Flat panel display device mainly includes liquid crystal display device (Liquid Crystal Display, LCD) and Organic Light Emitting Diode
Display device (Organic Light Emitting Display, OLED).
Organic Light Emitting Diode (Organic Light Emitting Display, OLED) display device has spontaneous
Light, driving voltage are low, luminous efficiency is high, response time is short, definition and contrast 180 ° of visual angles high, nearly, use temperature range
Width, can realize the plurality of advantages such as Flexible Displays and large area total colouring, is known as the display being there is most development potentiality by industry
Device.
OLED display generally includes: substrate, the anode being located on substrate, the hole injection layer being located on anode, set
Hole transmission layer on hole injection layer, the luminescent layer being located on hole transmission layer, the electron transfer layer being located on luminescent layer,
The electron injecting layer being located on electron transfer layer and the negative electrode being located on electron injecting layer.The principle of luminosity of OLED display device
For semi-conducting material and luminous organic material under electric field driven, injected and composite guide photoluminescence by carrier.Concrete,
OLED display device generally use ITO pixel electrode and metal electrode respectively as the anode of device and negative electrode, in certain voltage
Under driving, electronics and hole are injected into electron transfer layer and hole transmission layer, electronics and hole respectively from negative electrode and anode respectively
Move to luminescent layer through electron transfer layer and hole transmission layer, and meet in luminescent layer, form exciton and make light emitting molecule
Exciting, the latter sends visible ray through radiative relaxation.
After OLED display completes, need the processing procedure of each pixel is detected, find pixel driver electricity in time
Short circuit in road and open circuit fault, the product quality dispatched from the factory with guarantee.The detection method of OLED display at present, predominantly
There are two kinds: one is to be detected by imageing sensor (Charge-coupled Device, CCD), and another kind then passes through
Human eye detects.Wherein carrying out detecting by CCD needs to buy special CCD equipment, and the equipment cost of cost is higher, and
Its detection algorithm is the most more complicated with technique, and the time carrying out needing during point-to-point taking pictures is the longest, causes detecting overlong time, inspection
Survey inefficient.And detected by human eye, although need not equipment cost, but its efficiency is the highest, and it is accurate
Property is also difficult to ensure that missing inspection easily occur.
Summary of the invention
It is an object of the invention to provide a kind of OLED display drive circuit defect inspection method, it is possible to the quickest
The short circuit detected in OLED display drive circuit and open defect, promote OLED display drive circuit defect inspection
Survey efficiency, reduce OLED display drive circuit defects detection cost, it is ensured that product quality.
For achieving the above object, the invention provides a kind of OLED display drive circuit defect inspection method, including
Following steps:
Step 1, an OLED display drive circuit, described sub-pixel drive circuit is provided to include: the first film crystal
Pipe, the second thin film transistor (TFT), the 3rd thin film transistor (TFT), the first electric capacity, Organic Light Emitting Diode and the first switch；
The grid of described the first film transistor accesses scanning signal, source electrode incoming data signal, drain electrode electric connection the
One node；The grid of described second thin film transistor (TFT) is electrically connected with primary nodal point, and source electrode accesses the first supply voltage, and drain electrode is electrically
Connect secondary nodal point；The grid of described 3rd thin film transistor (TFT) accesses detection signal, and source electrode is electrically connected with the 3rd node, drain electrode electricity
Property connect secondary nodal point；One end of described first electric capacity is electrically connected with primary nodal point, and the other end is electrically connected with secondary nodal point；Described
The anode of Organic Light Emitting Diode is electrically connected with secondary nodal point, and negative electrode accesses second source voltage；One end of described first switch
Accessing common electric voltage, the other end is electrically connected with the 3rd node；
Step 2, described scanning signal and detection signal are provided which high potential, first and the 3rd thin film transistor (TFT) all open,
Described data signal provides the first voltage to primary nodal point, and described switch closes, and the voltage of described secondary nodal point is equal to common electrical
Pressure；
Step 3, described scanning signal and detection signal keep high potential, first and the 3rd thin film transistor (TFT) stay open,
Described data signal continue provide the first voltage to primary nodal point, described primary nodal point keeps the first voltage, described in switch off,
The voltage of described secondary nodal point is again stable after being continually changing；
Step 4, provide an analog-digital converter and the defect analysis module being electrically connected with described analog-digital converter, profit
Detect the voltage of described secondary nodal point with described analog-digital converter and send defect analysis module to；
Step 5, described defect analysis module by described analog-digital converter transmit come secondary nodal point voltage with preset
Normalization voltage range compares, when the voltage of described secondary nodal point is beyond the normalization voltage range preset, it is determined that described
OLED display drive circuit existing defects, when the voltage of described secondary nodal point is in default normalization voltage range, sentences
Fixed described OLED display drive circuit not existing defects.
Described step 5 also provides for operational amplifier and correlated double sampling circuit；
During detecting, the inverting input of described operational amplifier is electrically connected with its outfan, and in-phase input end is electrically connected with
3rd node, outfan is electrically connected with the input of correlated double sampling circuit, and the outfan of described correlated double sampling circuit is electrical
Connection mode number converter, the voltage of described secondary nodal point is via exporting after operational amplifier buffers to correlated double sampling circuit, institute
State correlated double sampling circuit to carry out the voltage of described secondary nodal point latching and exporting to analog-digital converter after logical operations, described
Analog-digital converter is detected the voltage row number of going forward side by side of described secondary nodal point and is quantified and send defect analysis module to.
In described step 2, the first voltage is more than the threshold voltage of the second thin film transistor (TFT) and less than Organic Light Emitting Diode
Threshold voltage, described common electric voltage is less than the threshold voltage of described Organic Light Emitting Diode.
When the voltage of described secondary nodal point is in default normalization voltage range, and described OLED shows dress in described step 5
When putting drive circuit not existing defects, the threshold voltage of described second thin film transistor (TFT) is equal to the first voltage and described secondary nodal point
The difference of voltage.
In described step 2, the first voltage is less than the threshold voltage of the second thin film transistor (TFT), and described common electric voltage is more than described
The threshold voltage of Organic Light Emitting Diode；
When the voltage of described secondary nodal point is in default normalization voltage range, and described OLED shows dress in described step 5
When putting drive circuit not existing defects, the threshold voltage of described Organic Light Emitting Diode is equal to the voltage of described secondary nodal point.
When the voltage of described secondary nodal point is more than the upper limit of described default normalization voltage range, it is determined that described second thin
Film transistor short circuit or the first capacitance short-circuit；
When the voltage of described secondary nodal point is less than the lower limit of described default normalization voltage range, then judge described second
Thin film transistor (TFT) open circuit.
When the voltage of described secondary nodal point is more than the upper limit of described default normalization voltage range, it is determined that described organic
Optical diode open circuit；
When the voltage of described secondary nodal point is equal to second source voltage, then judge the short circuit of described Organic Light Emitting Diode.
Being also formed with parasitic capacitance in described OLED display drive circuit, described parasitic capacitance in parallel is in described organic
The two ends of light emitting diode.
Described common electric voltage is equal to 0V.
Described first voltage is equal to 0V.
Described step 5 also includes: send alarm sounds when described OLED display drive circuit existing defects.
Beneficial effects of the present invention: the invention provides a kind of OLED display drive circuit defect inspection method, should
Whether method is by detecting the voltage of secondary nodal point, and according to the voltage of secondary nodal point in default normalization voltage range, sentence
Fixed described OLED display drive circuit whether existing defects, it is possible to detect that OLED display drives electricity quickly and accurately
Short circuit in road and open defect, and the method utilize OLED display external voltage compensate framework realize, it is not necessary to volume
Outer purchase detection equipment, does not has equipment cost, it is possible to promote OLED display drive circuit defects detection efficiency, reduces OLED
Display device drive circuit defects detection cost, it is ensured that product quality.
Accompanying drawing explanation
In order to be able to be further understood that inventive feature and technology contents, refer to below in connection with the present invention is detailed
Illustrate and accompanying drawing, but accompanying drawing only provides reference and explanation use, be not used for the present invention is any limitation as.
In accompanying drawing,
Fig. 1 is the OLED display drive circuit in the OLED display drive circuit defect inspection method of the present invention
Circuit diagram；
Fig. 2 is the flow chart of the OLED display drive circuit defect inspection method of the present invention.
Detailed description of the invention
By further illustrating the technological means and effect, being preferable to carry out below in conjunction with the present invention that the present invention taked
Example and accompanying drawing thereof are described in detail.
Refer to Fig. 1, the invention provides a kind of OLED display drive circuit defect inspection method, including walking as follows
Rapid:
Step 1, provide an OLED display drive circuit, including: the first film transistor T1, the second thin film transistor (TFT)
T2, the 3rd thin film transistor (TFT) T3, the first electric capacity C1, Organic Light Emitting Diode D1 and the first switch S1；
The grid of described the first film transistor T1 accesses scanning signal Scan, source electrode incoming data signal Data, drain electrode
It is electrically connected with primary nodal point P；The grid of described second thin film transistor (TFT) T2 is electrically connected with primary nodal point P, and source electrode accesses the first electricity
Source voltage Ovdd, drain electrode is electrically connected with secondary nodal point Q；The grid of described 3rd thin film transistor (TFT) T3 accesses detection signal Sen, source
Pole is electrically connected with the 3rd node K, and drain electrode is electrically connected with secondary nodal point Q；One end of described first electric capacity C1 is electrically connected with first segment
Point P, the other end is electrically connected with secondary nodal point Q；The anode of described Organic Light Emitting Diode D1 is electrically connected with secondary nodal point Q, negative electrode
Access second source voltage Ovss；Common electric voltage Vcm is accessed in one end of described first switch S1, and the other end is electrically connected with Section three
Point K.
Specifically, described the first film transistor T1, the second thin film transistor (TFT) T2, the 3rd thin film transistor (TFT) T3, the first electricity
Hold C1 and Organic Light Emitting Diode D1 and collectively constituted a sub-pixel-driving circuit of OLED display, and first switchs
S1 is then used for detecting this sub-pixel drive circuit threshold voltage.Described OLED display drive circuit is also formed with parasitic electricity
Holding C2, described parasitic capacitance C2 is parallel to the two ends of described Organic Light Emitting Diode D1.
Step 2, described scanning signal Scan and detection signal Sen are provided which high potential, first and the 3rd thin film transistor (TFT)
T1, T3 all open, and described data signal Data provides the first voltage to close to primary nodal point P, described switch S1, described second section
The voltage of some Q is equal to common electric voltage Vcm.
Specifically, described step 2 is divided into two kinds of situations, and a kind of is that detecting the second thin film transistor (TFT) T2 i.e. drives film crystal
The situation of the threshold voltage of pipe, the situation of a kind of threshold voltage for detecting Organic Light Emitting Diode D1.
Wherein, when detecting the threshold voltage that the second thin film transistor (TFT) T2 i.e. drives thin film transistor (TFT), in described step 2
One voltage threshold voltage more than the second thin film transistor (TFT) T2 and the threshold voltage less than Organic Light Emitting Diode D1, described public
The voltage Vcm threshold voltage less than described Organic Light Emitting Diode D1, thus described second thin film transistor (TFT) T2 conducting, and organic
Light emitting diode D1 is the most luminous.Preferably, now common electric voltage Vcm is 0V.
And when detecting the threshold voltage of Organic Light Emitting Diode D1, in described step 2, the first voltage is less than the second thin film
The threshold voltage of transistor T2, the described common electric voltage Vcm threshold voltage more than described Organic Light Emitting Diode D1, thus described
Second thin film transistor (TFT) T2 cut-off, and Organic Light Emitting Diode D1 is luminous.Preferably, now the first voltage is 0V.
Step 3, described scanning signal Scan and detection signal Sen keep high potential, first and the 3rd thin film transistor (TFT) T1,
T3 stays open, and described data signal Data continues to provide the first voltage to keep first to primary nodal point P, described primary nodal point P
Voltage, described switch S1 disconnects, and the voltage of described secondary nodal point Q is again stable after being continually changing.
Specifically, when detecting the threshold voltage that the second thin film transistor (TFT) T2 i.e. drives thin film transistor (TFT), if described
There is not short circuit and open defect, the most described secondary nodal point Q in OLED display not existing defects, i.e. sub-pixel drive circuit
Voltage should the difference of threshold voltage equal to the first voltage and described second thin film transistor (TFT) T2, also just say, now with the
One voltage deducts the voltage of detecting secondary nodal point Q should draw the threshold voltage of the second thin film transistor (TFT) T2, and thin according to second
The threshold voltage of film transistor T2 can only float in a rational voltage range, can be the voltage of secondary nodal point Q accordingly
Presetting a normalization voltage range, the threshold voltage of the second thin film transistor (TFT) T2 obtained according to this normalization voltage range needs
In the reasonable domain of walker of the threshold voltage of the second thin film transistor (TFT) T2.
Specifically, when detecting the threshold voltage of Organic Light Emitting Diode D1, if described OLED display does not exists
There is not short circuit and open defect in defect, i.e. sub-pixel drive circuit, the voltage of the most described secondary nodal point Q should be equal to having
The threshold voltage of machine light emitting diode D1, and the threshold voltage of Organic Light Emitting Diode D1 can only be a rational voltage range
Interior floating, can be that the voltage of secondary nodal point Q presets a normalization voltage range accordingly, and this normalization voltage range is organic
The reasonable domain of walker of the threshold voltage of optical diode D1.
Step 4, provide an analog-digital converter ADC and with described analog-digital converter ADC be electrically connected with a defect analysis
Module, utilizes described analog-digital converter ADC detect the voltage of described secondary nodal point Q and send defect analysis module to.
Specifically, described step 5 also provides for operational amplifier Y1 and correlated double sampling circuit CDS.
During detecting, the inverting input of described operational amplifier Y1 is electrically connected with its outfan, and in-phase input end electrically connects
Meeting the 3rd node K, outfan is electrically connected with the input of correlated double sampling circuit CDS, and described correlated double sampling circuit CDS's is defeated
Going out end and be electrically connected with analog-digital converter ADC, the voltage of described secondary nodal point Q exports to relevant after buffering via operational amplifier Y1
The voltage of described secondary nodal point Q is carried out latching and after logical operations by dual-sampling circuit CDS, described correlated double sampling circuit CDS
Export the voltage to analog-digital converter ADC, the described analog-digital converter ADC described secondary nodal point Q of detecting and go forward side by side row number quantization also
Send defect analysis module to.
It is understood that the method for voltage detecting secondary nodal point Q in described step 4 is not limited to above-mentioned by fortune
Calculation amplifier Y1, correlated double sampling circuit CDS and analog-digital converter ADC carries out the method detected, and it can also pass through modulus
Transducer ADC arranges in pairs or groups other elements or module is detected.
Described analog-digital converter ADC is transmitted the voltage of the secondary nodal point Q come with pre-by step 5, described defect analysis module
If normalization voltage range compare, when described secondary nodal point Q voltage beyond preset normalization voltage range time, it is determined that institute
State OLED display drive circuit existing defects, when the voltage of described secondary nodal point Q is in default normalization voltage range,
Judge described OLED display drive circuit not existing defects.
Specifically, when detecting the threshold voltage of the second thin film transistor (TFT) T2, if the voltage of described secondary nodal point Q is more than institute
When stating the upper limit of default normalization voltage range, then judge that described sub-pixel drive circuit there may be described second film crystal
Pipe T2 short circuit or the defect of the first electric capacity C1 short circuit.If the voltage of described secondary nodal point Q is less than described default normal voltage model
During the lower limit enclosed, then judge that described sub-pixel drive circuit there may be the defect of described second thin film transistor (TFT) T2 open circuit.
Specifically, when detecting the threshold voltage of Organic Light Emitting Diode D1, if when the voltage of described secondary nodal point Q is more than
During the upper limit of described default normalization voltage range, it is determined that described sub-pixel drive circuit there may be described organic light-emitting diodes
The defect of pipe D1 open circuit；If the voltage of described secondary nodal point Q is equal to second source voltage Ovss, then judge that described sub-pixel drives
Galvanic electricity road there may be the defect of described Organic Light Emitting Diode D1 short circuit.
Further, said process can be based entirely on the external voltage of existing OLED display and compensate framework realization,
Need not additionally buy detection equipment, there is no equipment cost, it is possible to promote OLED display drive circuit defects detection efficiency,
Reduce OLED display drive circuit defects detection cost, it is ensured that product quality.
It is noted that described step 5 also includes: send when described OLED display drive circuit existing defects
Alarm sounds.The concrete mode of alarm sounds can carry out respective design, as required such as audio alarm etc..
In sum, the invention provides a kind of OLED display drive circuit defect inspection method, the method is passed through
The voltage of detecting secondary nodal point, and according to the voltage of secondary nodal point whether in default normalization voltage range, it is determined that described
OLED display drive circuit whether existing defects, it is possible to detect quickly and accurately in OLED display drive circuit
Short circuit and open defect, and the method utilize OLED display external voltage compensate framework realize, it is not necessary to additionally buy
Detection equipment, does not has equipment cost, it is possible to promote OLED display drive circuit defects detection efficiency, reduces OLED display dress
Put drive circuit defects detection cost, it is ensured that product quality.
The above, for the person of ordinary skill of the art, can be according to technical scheme and technology
Other various corresponding changes and deformation are made in design, and all these change and deformation all should belong to the claims in the present invention
Protection domain.
Claims (10)
1. an OLED display drive circuit defect inspection method, it is characterised in that comprise the steps:
Step 1, provide an OLED display drive circuit, including: the first film transistor (T1), the second thin film transistor (TFT)
(T2), the 3rd thin film transistor (TFT) (T3), the first electric capacity (C1), Organic Light Emitting Diode (D1) and the first switch (S1)；
The grid of described the first film transistor (T1) accesses scanning signal (Scan), source electrode incoming data signal (Data), leakage
Pole is electrically connected with primary nodal point (P)；The grid of described second thin film transistor (TFT) (T2) is electrically connected with primary nodal point (P), and source electrode connects
Entering the first supply voltage (Ovdd), drain electrode is electrically connected with secondary nodal point (Q)；The grid of described 3rd thin film transistor (TFT) (T3) accesses
Detection signal (Sen), source electrode is electrically connected with the 3rd node (K), and drain electrode is electrically connected with secondary nodal point (Q)；Described first electric capacity
(C1) one end is electrically connected with primary nodal point (P), and the other end is electrically connected with secondary nodal point (Q)；Described Organic Light Emitting Diode
(D1) anode is electrically connected with secondary nodal point (Q), and negative electrode accesses second source voltage (Ovss)；The one of described first switch (S1)
Terminating into common electric voltage (Vcm), the other end is electrically connected with the 3rd node (K)；
Step 2, described scanning signal (Scan) and detection signal (Sen) are provided which high potential, first and the 3rd thin film transistor (TFT)
(T1, T3) all opens, and described data signal (Data) provides the first voltage to close to primary nodal point (P), described switch (S1), institute
State the voltage of secondary nodal point (Q) equal to common electric voltage (Vcm)；
Step 3, described scanning signal (Scan) and detection signal (Sen) keep high potential, first and the 3rd thin film transistor (TFT)
(T1, T3) stays open, and described data signal (Data) continues to provide the first voltage to primary nodal point (P), described primary nodal point
(P) keeping the first voltage, described switch (S1) disconnects, and the voltage of described secondary nodal point (Q) is again stable after being continually changing；
Step 4, provide an analog-digital converter (ADC) and the defect analysis being electrically connected with described analog-digital converter (ADC)
Module, utilizes described analog-digital converter (ADC) detect the voltage of described secondary nodal point (Q) and send defect analysis module to；
Described analog-digital converter (ADC) is transmitted the voltage of the secondary nodal point (Q) come with pre-by step 5, described defect analysis module
If normalization voltage range compare, when described secondary nodal point (Q) voltage beyond preset normalization voltage range time, it is determined that
Described OLED display drive circuit existing defects, when the voltage of described secondary nodal point (Q) is in default normalization voltage range
Time interior, it is determined that described OLED display drive circuit not existing defects.
2. OLED display drive circuit defect inspection method as claimed in claim 1, it is characterised in that described step 5
In also provide for operational amplifier (Y1) and correlated double sampling circuit (CDS)；
During detecting, the inverting input of described operational amplifier (Y1) is electrically connected with its outfan, and in-phase input end is electrically connected with
3rd node (K), outfan is electrically connected with the input of correlated double sampling circuit (CDS), described correlated double sampling circuit (CDS)
Outfan be electrically connected with analog-digital converter (ADC), the voltage of described secondary nodal point (Q) via operational amplifier (Y1) buffer after
Output is to correlated double sampling circuit (CDS), and the voltage of described secondary nodal point (Q) is carried out by described correlated double sampling circuit (CDS)
Latching and export to analog-digital converter (ADC) after logical operations, described secondary nodal point (Q) detected by described analog-digital converter (ADC)
Voltage row number of going forward side by side quantify and send defect analysis module to.
3. OLED display drive circuit defect inspection method as claimed in claim 1, it is characterised in that described step 2
In the first voltage more than the threshold voltage of the second thin film transistor (TFT) (T2) and less than the threshold voltage of Organic Light Emitting Diode (D1),
Described common electric voltage (Vcm) is less than the threshold voltage of described Organic Light Emitting Diode (D1)；
When the voltage of described secondary nodal point (Q) is in default normalization voltage range in described step 5, described OLED display
During drive circuit not existing defects, the threshold voltage of described second thin film transistor (TFT) (T2) is equal to the first voltage (V1) and described the
The difference of the voltage of two nodes (Q).
4. OLED display drive circuit defect inspection method as claimed in claim 1, it is characterised in that described step 2
In the first voltage be more than described organic light emission less than the threshold voltage of the second thin film transistor (TFT) (T2), described common electric voltage (Vcm)
The threshold voltage of diode (D1)；
When the voltage of described secondary nodal point (Q) is in default normalization voltage range in described step 5, described OLED display
During drive circuit not existing defects, the threshold voltage of described Organic Light Emitting Diode (D1) is equal to the electricity of described secondary nodal point (Q)
Pressure.
5. OLED display drive circuit defect inspection method as claimed in claim 3, it is characterised in that when described second
When the voltage of node (Q) is more than the upper limit of described default normalization voltage range, it is determined that described second thin film transistor (TFT) (T2) is short
Road or the first electric capacity (C1) short circuit；
When the voltage of described secondary nodal point (Q) is less than the lower limit of described default normalization voltage range, then judge described second
Thin film transistor (TFT) (T2) open circuit.
6. OLED display drive circuit defect inspection method as claimed in claim 4, it is characterised in that when described second
When the voltage of node (Q) is more than the upper limit of described default normalization voltage range, it is determined that described Organic Light Emitting Diode (D1) breaks
Road；
When the voltage of described secondary nodal point (Q) is equal to second source voltage (Ovss), then judge described Organic Light Emitting Diode
(D1) short circuit.
7. OLED display drive circuit defect inspection method as claimed in claim 1, it is characterised in that described OLED shows
Being also formed with parasitic capacitance (C2) in showing device drive circuit, described parasitic capacitance (C2) is parallel to described Organic Light Emitting Diode
(D1) two ends.
8. OLED display drive circuit defect inspection method as claimed in claim 3, it is characterised in that described common electrical
Pressure (Vcm) is equal to 0V.
9. OLED display drive circuit defect inspection method as claimed in claim 4, it is characterised in that described first electricity
Pressure is equal to 0V.
10. OLED display drive circuit defect inspection method as claimed in claim 1, it is characterised in that described step 5
Also include: send alarm sounds when described OLED display drive circuit existing defects.
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| CN106531041A (en) * | 2016-12-29 | 2017-03-22 | 深圳市华星光电技术有限公司 | K-value detection method for OLED driving thin film transistor |
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| CN107909952A (en) * | 2017-12-06 | 2018-04-13 | 广东欧珀移动通信有限公司 | Detect the method and gauge of display screen |
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