CN105303999A

CN105303999A - Defect detection and correction of pixel circuits for AMOLED displays

Info

Publication number: CN105303999A
Application number: CN201510293521.5A
Authority: CN
Inventors: 戈尔拉玛瑞扎·恰吉; 贾马尔·索尼; 乔纳森·杰基尔; 阿利森·詹尼科里斯
Original assignee: Ignis Innovation Inc
Current assignee: Ignis Innovation Inc
Priority date: 2014-05-30
Filing date: 2015-06-01
Publication date: 2016-02-03
Also published as: DE102015210048A1

Abstract

A method of testing an array-based semiconductor device for defects during fabrication of the semiconductor device detects defects in said entities forming the semiconductor device at an intermediate stage in the fabrication of multiple types of entities forming the semiconductor device; determines whether the detected defects exceed preselected thresholds for the types of entities in which said detects are detected; if the detected defects do not exceed said preselected thresholds, continues the fabrication of the semiconductor device; and if the detected defects exceed said preselected thresholds, identifies the types of defects detected, repairs the identified defects, and continues the fabrication of the semiconductor device. According to the invention, defects and nonuniformity in a manufacturing period can be identified.

Description

For defects detection and the correction of the image element circuit of displayer

Technical field

The present invention relates generally to active matrix organic light-emitting device (AMOLED) display, and relate to the aging condition determining that the pixel of requirement to this class display compensates particularly, and for detecting the detection system of defect in this class display and unevenness.

Background technology

Current needs are for providing the technology of the accurate measurement of display Time and place information and applying such information to improve the method for the show uniformity in displayer.For the object of compensation of ageing, also need the base measurement accurately determining pixel characteristic.

The OLED used in displayer and thin film transistor (TFT) (TFT) all can present uneven performance because of production problem on a display panel.If (such as, during manufacture or after following manufacture closely) can identify defect and unevenness when producing panel, so just this kind of problem can be solved.

Summary of the invention

According to an embodiment, provide a kind of system of the defect for detecting described semiconductor devices in the following way during the manufacture of the semiconductor devices based on array: (a) detects the defect in the described entity forming described semiconductor devices in the interstage manufacturing the polytype entity forming described semiconductor devices; B () determines whether the defect detected has exceeded the pre-selected threshold of the type of the described entity detecting defect; (C) if described in the defect that detects do not exceed described pre-selected threshold, then continue the manufacture of described semiconductor devices; And if the defect detected described in (d) exceedes described pre-selected threshold, then the type of the described defect detected is identified, repair the defect that identifies and continue the manufacture of described semiconductor devices.

In one embodiment, the described semiconductor devices based on array is active matrix organic light-emitting device (AMOLED) display panel, and polytype main body at least comprises driving transistors, OLED and signal wire.Described pre-selected threshold can change along with the increase of the number of the described defect detected, and by according to detect defect described entity type and the described type of test to defect that customize identifies.Defect can be detected in described entity: measure voltage in single pixel or electric current and the pre-selected threshold of measured value and described voltage or electric current compared by following manner.The described electric current measured can be the electric current of the luminescent device flowing to pixel, and the described voltage measured can be the voltage of the junction of luminescent device in image element circuit and described pixel.Defect can be detected by following manner in described entity: the minimum level based on the curtage in normal pixel carrys out the datum of pre-chosen current or voltage, and the curtage of measurement is compared with the described datum of corresponding preliminary election.

According to the detailed description carried out various embodiment and/or each side with reference to accompanying drawing (next will carry out brief description to them), to those skilled in the art, aforesaid and additional aspect of the present invention and embodiment will be apparent.

Accompanying drawing explanation

Detailed description below reading with reference to after accompanying drawing, aforesaid and other advantage of the present invention will be apparent to those skilled in the art.

Fig. 1 is the block diagram of the displayer of the reference pixel of the data had for corrected parameter compensatory control;

Fig. 2 A be a pixel of the test of the carried out ageing parameter of AMOLED the block diagram of driving circuit;

Fig. 2 B is the circuit diagram of the driving circuit of a pixel in the pixel of AMOLED;

Fig. 3 is the block diagram of the system for one of the baseline ageing parameter determining tested device;

Fig. 4 A be in Fig. 3 for reference to the block diagram of current level with the current comparator compared for the tested device of compensation of ageing;

Fig. 4 B is the detailed circuit diagram of the current comparator in Fig. 4 A;

Fig. 4 C is the detailed diagram of the tested device in the Fig. 3 be connected with the current comparator in Fig. 4 A;

Fig. 5 A is determining the signal timing diagram for the signal of the current comparator in Fig. 3-4 in the process that the electric current of tested device exports;

Fig. 5 B is the signal timing diagram of the signal for corrects bias electric current of current comparator in Fig. 3 to 4;

Fig. 6 is the block diagram of the aging reference current system for compensating the displayer in Fig. 1;

Fig. 7 is the block diagram of the system for adjusting multiple brightness files that display uses in varied situations;

Fig. 8 is the block diagram of the frame of video of calibration for the pixel in display; And

Fig. 9 shows the use being applied to the small area analysis of reference pixel for more accurate compensation of ageing.

Figure 10 is the schematic diagram of the display of the picture element matrix with the row comprising reference pixel.

Figure 11 is the sequential chart of the compensation of ageing undertaken by applying before programming to reset circulation, uses reset value to programme to pixel in replacement cycle period.

Figure 12 A has the circuit diagram that the image element circuit of compensation falls in IR.

Figure 12 B is the sequential chart of the normal running of the image element circuit of Figure 12 A.

Figure 12 C is the sequential chart that the direct TFT of the image element circuit of Figure 12 A reads.

Figure 12 D is the sequential chart that the direct OLED of the image element circuit of Figure 12 A reads.

Figure 13 A is the circuit diagram with the image element circuit that electric charge base compensates.

Figure 13 B is the sequential chart of the normal running of the image element circuit of Figure 13 A.

Figure 13 C is the sequential chart that the direct TFT of the image element circuit of Figure 13 A reads.

Figure 13 D is the sequential chart that the direct OLED of the image element circuit of Figure 13 A reads.

Figure 13 E is the sequential chart that the indirect OLED of the image element circuit of Figure 13 A reads.

Figure 14 is the circuit diagram of biased pixel circuit.

Figure 15 A is the circuit diagram of the image element circuit with the signal wire be connected with OLED and image element circuit.

Figure 15 B is the circuit diagram of the image element circuit with the ITO electrode be patterned as signal wire.

Figure 16 is the schematic diagram of the solder pad arrangements of detection for panel.

Figure 17 is the circuit diagram of the image element circuit for back plate testing.

Figure 18 is the circuit diagram of the image element circuit for full display apparatus test.

Figure 19 is the schematic perspective view being suitable for the display panel receiving probe (probecard).

Figure 20 is the schematic elevational view of the display panel shown in Fig. 1, the figure shows the position of the probe pad for receiving probe.

Figure 21 shows a pair probe pad of the multiplexer be connected to for probe signals being provided to probe pad.

Figure 22 is the schematic circuit being connected a probe pad for receiving display shown in Fig. 3.

Figure 23 is the schematic diagram of the detection system of measurement for carrying out AMOLED panel and various corrective actions, and described correction can be used to repair the defect identified by this survey quantitative analysis.

Figure 24 is the schematic circuit of the image element circuit with signal WR.

Figure 25 is the circuit diagram being suitable for a pair image element circuit detected.

The present invention can have various amendment and alternative form, shows specific embodiment by the example in accompanying drawing and will be described them in detail in this article.But should be understood that, the present invention is not limited to disclosed particular form.The present invention can cover claim appended by the present invention all amendment in the spirit and scope of the present invention that limit, equivalent and substitute.

Embodiment

Fig. 1 is the electronic display system 100 with active matrix district or pel array 102, and wherein, the array of valid pixel 104a-d arranges with the structure of row and column.For convenience of explanation, illustrate only two row and two row.The outside in active matrix district (pel array 102) is the neighboring area 106 of peripheral circuit in region be furnished with for driving and control pel array 102.Peripheral circuit comprises grid or address driving circuit 108, source class or data drive circuit 110, controller 112 and optional supply voltage (such as, Vdd) driver 114.Controller 112 control gate driver 108, source class driver 110 and supply voltage driver 114.Under the control of the controller 12, gate drivers 108 pairs of addresses or selection line SEL [i] and SEL [i+1] etc. operate, and address or selection line are used for the often row of the pixel 104 in pel array 102.Share in structure in following pixel, grid or address driving circuit 108 also selectively select line GSEL [j] and/GSEL [j] to operate to the overall situation, the overall situation selects line GSEL [j] and/GSEL [j] to operate the multirow pixel 104a-d in pel array 102, every two row of such as pixel 104a-d.Voltage data line is by the voltage-programming information conveyance of the brightness of each luminescent device in instruction pixel 104 extremely each pixel 104.The memory element storage voltage programming informations such as the such as capacitor in each pixel 104, until luminous or driving circulation unlatching luminescent device.Optional supply voltage driver 114 controls supply voltage (EL_Vdd) line under the control of controller 112, and power voltage line is used for the often row of the pixel 104a-d in pel array 102.

Display system 100 also can comprise the current source circuit of the fixed current provided on current offset line.In some constructions, current source circuit can be provided to reference to electric current.In such configuration, current source controller controls the applying sequential of the bias current on current offset line.Be not provided in the structure of current source circuit at reference current, current source address driver controls the applying sequential of the bias current on current offset line.

As everyone knows, each pixel 104a-d in display system 100 needs to utilize the information of the brightness of the luminescent device in instruction pixel 104a-d to programme.Frame (frame) defines the time cycle comprising programming cycle or stage and driving or light period or stage, in described programming cycle, wherein utilize the program voltage of instruction brightness to programme to each pixel in display system 100, and each luminescent device in described drive cycle in each pixel is unlocked thus with the Intensity LEDs corresponding to the program voltage stored in memory element.Therefore, frame is a still image among many still images of the full motion image formed shown by display system 100.For programming and driving the scheme of pixel to have two kinds at least: (row-by-row) or frame by frame (frame-by-frame) line by line.In programming line by line, one-row pixels is programmed and is then driven, and then next line pixel is programmed and is driven.In programming frame by frame, first the pixel of all row in display system 100 is programmed, then line by line all frames are driven.Any one scheme can both be used in the vertical blanking time of the beginning of every frame or the of short duration of end, and neither programming to pixel in vertical blanking time does not also drive pixel.

On the Same Physical substrate being furnished with pel array 102, the parts being arranged in pel array 102 outside can be disposed in the neighboring area 106 around pel array 102.These parts comprise gate drivers 108, source class driver 110 and optional supply voltage controller 114.Or, some parts in neighboring area can be disposed on the substrate identical with pel array 102, and other parts are disposed on different substrates, or all parts in neighboring area are all disposed on the substrate different from the substrate being furnished with pel array 102.Gate drivers 108, source class driver 110, supply voltage controller 114 form display driver circuit jointly.Display driver circuit in some structures can comprise gate drivers 108 and source class driver 110, but does not comprise supply voltage controller 114.

Display system 100 also comprises the electric current supply and the sensing circuit 120 that read output data from DOL Data Output Line VD [k] and VD [k+1] etc., and DOL Data Output Line is for the often row pixel 104a in pel array 102 and 104c.In the edge of pel array 102, one group of row reference pixel 130 is assembled in the end often arranging (row of such as pixel 104a and 104c).Row reference pixel 130 also can receive input signal from controller 112 and data-signal be exported to electric current supply and sensing circuit 120.Row reference pixel 130 comprises driving transistors and OLED, but is not a part for the pel array 102 of display image.As will be described below, row reference pixel 130 is not driven in most programming cycle, this is because they are not the parts of pel array 102 for display image, and therefore compare with 104c with pixel 104a can not be aging because of being continuously applied of program voltage.Often row pixel in this example although illustrate only a row reference pixel 130 in FIG, should be understood that there is the row reference pixel of any amount, although can use two to five such reference pixels.Often row pixel in array 102 also comprises the row reference pixel 132 of the end being positioned at often row pixel 104a-d (such as pixel 104a and 104b).Row reference pixel 132 comprises driving transistors and OLED, but is not a part for the pel array 102 of display image.As will illustratively, row reference pixel 132 has the function of the reference inspection of the brightness curve providing pixel, and the brightness curve of described pixel is determined when producing.

Fig. 2 A shows the block diagram of the driving circuit 200 of the pixel 104 of Fig. 1.Driving circuit 200 comprises drive unit 202, organic luminescent device (" OLED ") 204, memory element 206 and switchgear 208.Voltage source 212 is connected to drive unit 202.Line 214 is selected to be connected to switchgear to activate driving circuit 200.Data line 216 makes program voltage be applied to drive unit 202.Monitoring cable 218 makes the output of OLED204 and/or drive unit 202 monitored.Or monitoring cable 218 and data line 216 can merged (that is, Data/Mon) into a line, not only to perform programing function but also perform monitoring function by this line.

Fig. 2 B shows an example of the circuit of the driving circuit 200 implemented in Fig. 2 A.As shown in Figure 2 B, drive unit 202 is driving transistorss, and in this example, this driving transistors is the thin film transistor (TFT) be made up of amorphous silicon.In this example, memory element 206 is capacitor.Switchgear 208 comprises different signal switching to the selection transistor 226 of driving circuit 200 and monitoring transistor 230.Select line 214 to be connected to and select transistor 226 and monitoring transistor 230.During readout time, line 214 is selected to be driven high.Program voltage can be applied via program voltage input line 216.Monitoring voltage can be read from the monitoring cable 218 be connected with monitoring transistor 230.Can send a signal to abreast with the pixel programming cycle and select line 214.As below by being described, the grid by being applied to driving transistors with reference to voltage carrys out periodically Test driver circuit 200.

There is several technology for extracting electrical characteristic data from tested device (DUT) such as such as display systems 100.Tested device (DUT) can be any material (or device) including, but is not limited to light emitting diode (LED) or OLED.This test can be determined the OLED in the panel be made up of the pel array such as array 102 grade in such as Fig. 1 aging (and/or homogeneity) effectively.In storer in controller 112 in FIG, the data that this can be extracted store in a lookup table as original or processed data.Described look-up table can be used to compensate any skew (such as, the skew of threshold voltage shift or OLED operating voltage) in the electrical quantity of backboard or OLED.Although employ the OLED display in Fig. 1 in these examples, the technology illustrated herein can be applied to any display technique including but not limited to OLED, liquid crystal display (LCD), light emitting diode indicator or plasma scope etc.In case of oleds, the telecommunications breath measured can provide any aging prompting that may occur.

Electric current can be applied to tested device and can measure output voltage.In this example, analog to digital converter (ADC) is used to measure voltage.In order to there be identical output, compared with the program voltage of new OLED, the devices such as aging such as OLED occur needs higher program voltage.The method gives the direct measurement of this change in voltage of tested device.Current direction can be any direction, but electric current is fed into tested device (DUT) usually for purposes of illustration.

Fig. 3 can be used for determining that the baseline value of tested device 302 is to determine the block diagram of the comparison system 300 of the aging impact on tested device 302.Comparison system uses two reference currents to determine that the base current of tested device 302 exports.Tested device 302 can be the OLED such as driving transistors 202 driving transistors such as grade in such as Fig. 2 B or the OLED204 in such as Fig. 2 B.Certainly, the display device of the system shown in Fig. 3 to other type also can be used to test.Tested device 302 has the program voltage being maintained at constant level and inputs 304 with output current.Current comparator 306 has the first reference current input 308 and the second reference current input 310.Reference current input 308 is connected to the first reference current source 312 via switch 314.Second electric current input 310 of comparer 306 is connected to the second reference current source 316 via switch 318.The output 320 of tested device 302 is also connected to the second electric current input 310.Current comparator 306 comprises and compares output 322.

By making the voltages keep constant of input 304, the output current of tested device 302 is also constant.This electric current depends on the characteristic of tested device 302.Establish steady current for the first reference current from the first reference current source 312 and via switch 314, first reference current is applied to first of current comparator 306 and input 308.Second reference current is adjusted to different level, and wherein each level is connected to the second input 310 of comparer 306 via switch 318.Second reference current mixes with the output current of tested device 302.Because the first reference current levels and the second reference current levels are known, so the difference between two reference current levels of the output 322 of current comparator 306 is exactly the current level of tested device 302.For tested device 302 stores the output current obtained and the electric current periodically measured based on identical program voltage level during being operated in this output current and the serviceable life in tested device 302 compares, to determine aging impact.

For each device in display, the determination device current of acquisition can be stored in a lookup table.Because tested device 302 occurs aging, so electric current will change from expectation level and therefore program voltage can be changed to and compensate the aging impact based on the base current determined by the calibration process in Fig. 3.

Fig. 4 A is the block diagram that can be used for the current comparator circuit 400 compared with the electric current of the tested device 302 in such as Fig. 3 with reference to electric current.Current comparator circuit 400 has the Controlling vertex 402 of the electric current of the tested device such as pixel-driving circuit 200 in the various electric current input such as permission such as two reference currents and such as Fig. 1.When the electric current of driving transistors 202 is compared electric current be positive current or when the electric current of OLED204 is compared electric current be negative current.Current comparator circuit 400 also comprises computing across resistance amplifying circuit 404, prime amplifier 406 and the voltage comparator circuit 408 producing voltage output 410.Combination current is input to computing across hindering amplifying circuit 404 and being converted into voltage.This voltage is input to prime amplifier and voltage comparator circuit 408 determines that difference between current is for just or for bear and to export each difference between current or null value.

Fig. 4 B is can be used in Fig. 4 A compares the parts of the example of the current comparator circuit 400 of electric current as described in the process in Fig. 3 circuit diagram for tested device such as such as devices 302.Computing comprises operational amplifier 412, first voltage input 414 (CMP_VB), the second voltage input 416 (CMP_VB), current input terminal 418 and bias current sources 420 across resistance amplifying circuit 404.Computing also comprises two calibration switch 424 and 426 across resistance amplifying circuit 404.As will be described below, in this example, the various electric current such as the electric current of all tested device 302 as shown in Figure 3, the first variable reference current and the second fixing reference current is connected to electric current input 418.Certainly, if desired, the second fixing reference current can be set as zero.

First reference current input is connected with the negative input of operational amplifier 412.Therefore, the output current of the negative input of operational amplifier 412 and the tested device 302 in Fig. 3 and one or two reference current are connected.Positive input and first voltage of operational amplifier 412 input 414 and are connected.The output of operational amplifier 412 is connected with the grid of transistor 432.Resistor 434 is connected between the negative input of operational amplifier 412 and the source class of transistor 432.Resistor 436 is connected to the source class of transistor 432 and the second voltage inputs between 416.

The drain electrode of transistor 432 is connected directly to the drain electrode of transistor 446 and is connected to the grid of transistor 446 via calibration switch 426.Sampling capacitor 444 is connected between the grid of transistor 446 and power voltage line 411 by switch 424.The source class of transistor 446 is also connected to power voltage line 411.The drain and gate of transistor 446 is connected with the gate terminal of transistor 440 and 442 respectively.The source class of transistor 440 and 442 links together and is connected to bias current sources 438.The drain electrode of transistor 440 and 442 is connected to transistor 448 and 450 respectively, and the structure that transistor 448 is connected with diode with 450 is wired to power voltage line 411.As shown in Figure 4 B, transistor 440,442,448 and 450 and bias current sources 438 are parts of prime amplifier 406.

The drain electrode of transistor 442 is connected with the grid of transistor 452 and the grid of transistor 454 respectively with the drain electrode of transistor 440.The drain electrode of transistor 452 and 454 is connected to transistor 456 and 458.The drain electrode of transistor 456 and the drain electrode of transistor 458 are connected to the source class of transistor 460 and the source class of transistor 462 respectively.The drain terminal of transistor 460 and 462 and gate terminal are connected to drain terminal and the gate terminal of transistor 464 and 466 respectively.The source class connecting terminals of transistor 464 and 466 is connected to power voltage line 411.The source class of transistor 464 and drain electrode are connected to source class and the drain electrode of transistor 468, and the source class of transistor 466 and drain electrode are connected to source class and the drain electrode of transistor 470.The grid of transistor 456 and 458 is connected to enable input (enableinput) 472.Enable input 472 is also connected to the grid of pair transistor 468 and 470.

Buffer circuit 474 is connected to the drain electrode of transistor 462 and the grid of transistor 460.Output voltage 410 is connected to buffer circuit 476, and buffer circuit 476 is connected to the drain electrode of transistor 460 and the grid of transistor 462.Buffer circuit 474 is for equalizing and buffering circuit 476.Transistor 452,454,456,458,460,462,464,466,468 and 470 and buffer circuit 474 and 476 constitute voltage comparator circuit 408.

Current comparator system 400 can based on including but not limited to any integrated circuit technique that cmos semiconductor manufactures.In this example, the parts of current comparator system 400 are cmos devices.For from the first current input terminal 418 (I _ref) given reference current levels, determine the value of the input voltage of input voltage 414 and 416.In this example, input voltage 414 is identical with the voltage level of 416.The voltage input 414 and 416 of control inputs to operational amplifier 412 can be carried out by using digital to analog converter (DAC) device do not illustrated in the diagram.If the voltage range of DAC is not enough, so also level shifter can be increased.Bias current can be produced by transistors such as Voltage-controlled Current Source or such as thin film transistor (TFT) such as such as trans-impedance amplifier circuit.

Fig. 4 C shows the detailed diagram of an example of all test macros such as system as shown in Figure 3 300 grade.Test macro in Fig. 4 C is connected to tested device 302, and wherein tested device 302 can be the pixel-driving circuit of all pixel-driving circuit as shown in Figure 2 200 grades.In this example, all driving circuits of flat-panel monitor are tested.Gate driver circuit 480 is connected to the selection line of all driving circuits.Gate driver circuit 480 comprises enable input, and when the signal inputted is low, described enable input starts tested device 302 in this example.

Tested device 302 receives data-signal from source class drive circuit 484.Source class drive circuit 484 can be the source class driver of source class driver 120 grade in such as Fig. 1.Data-signal is the program voltage of predetermined value.When gate driver circuit 480 starter gear, tested device 302 output current on monitoring cable.Output from the monitoring cable of tested device 302 is connected to the analog multiplexing circuit 482 enabling multiple device carry out testing and connects.In this example, it is multiplexed that analog multiplexing circuit 482 allows 210 to input, but, certainly can carry out multiplexed to the input of any amount.

The signal output of tested device 302 inputs 418 with computing across the reference current hindering amplifying circuit 404 and is connected.In this example, as described in Figure 3, variable reference current source is connected to current input terminal 418.In this example, there is not the fixed currents such as the first reference current in such as Fig. 3.Therefore, the value of the first reference current source in Fig. 3 is considered to zero in this example.

Fig. 5 A is the sequential chart of the signal of the current comparator shown in Fig. 4 A-4C.Sequential chart in Fig. 5 A shows the grid enable signal 502 of the gate drivers 480 in Fig. 4 C, the CSE enable signal 504 be connected with analog multiplexer 482, the current reference signal 506 produced by variable reference current source (it is set to predetermined level and is connected with current input terminal 418 in the repeating of test processes) at every turn, control the calibrating signal 508 of calibration switch 426, control the calibrating signal 510 of calibration switch 424, the comparer enable signal 512 being connected to enable input 472 and the output voltage 514 exported on 410.CSE enable signal 504 is retained as height, with guarantee any leakage on the monitoring cable of tested device 302 final electric current relatively in be eliminated.

In the first stage 520, grid enable signal 502 is driven high and therefore, the output of the tested device 302 in Fig. 4 C is zero.Therefore, the electric current inputing to current comparator 400 is only the leakage current of the monitoring cable from tested device 302.The output of reference current 506 is also set to zero, and the best stationary state of the transistor 432 and 436 in Fig. 4 B and 4C is only minimally affected by the skew of line leakage or sensing circuit.Calibrating signal 508 is set to height, and this makes calibration switch 426 close.Calibrating signal 510 is set to height, and this makes calibration switch 424 close.Comparer enable signal 512 is set to output that is low and therefore voltage comparator circuit 408 and is reset as logical one.Therefore, leakage current is input to electric current input 418 and voltage for the leakage current representing the monitoring cable on panel is stored in capacitor 444.

In subordinate phase 522, grid enable signal 502 is dragged down and therefore the output of tested device 302 produces unknown current under from the setting program voltage input of source driver circuit 484.From tested device 302 electric current be set to the first predetermined value and input 418 by electric current together with the reference current 506 contrary with the direction of current of tested device and be transfused to.Therefore, electric current input 418 is reference current 506 and the difference from the electric current of tested device 302.Calibrating signal 510 is set as low momently, to open switch 424.Then, calibrating signal 508 be set to low and therefore switch 426 be opened.Then, the calibrating signal 510 of gauge tap 424 is set to height, with closing switch 424, thus makes the voltage stabilization on the gate terminal of transistor 446.Comparer enable signal 512 remains output that is low and that so there is no from voltage comparator circuit 408.

In the phase III 524, comparer enable signal 512 is driven high and voltage comparator 408 exports generation output on 410 at voltage.In this example, the positive voltage output logic 1 of output voltage signal 514 represents positive current, and the electric current therefore indicating tested device 302 is greater than predetermined reference current.No-voltage on voltage output end 410 represents negative current, and this negative current shows that the electric current of tested device 302 is less than the reference current of predetermined level.In this way, any difference between the electric current of tested device and reference current is all amplified by current comparator circuit 400 and detects.Then, the second predetermined level is moved to and duplication stages 520,522 and 524 based on the structure detected with reference to the value of electric current.Carrying out adjustment to reference current makes comparator circuit 400 tested system to use, to determine that the electric current of tested device 302 exports.

Fig. 5 B is applied to the sequential chart of the signal of the test macro shown in Fig. 4 C in order to determine computing across the just bias current value of the bias current sources 420 in Fig. 4 B of resistance amplifying circuit 404.In order to obtain the maximum signal to noise ratio (SNR) of current comparator circuit 400, must calibrate current comparator.Described calibration is realized by the fine setting (finetuning) of bias current sources 420.The just bias current level of bias current sources 420 makes the noise power during the measurement of pixel (it is also the function that line leaks) minimize.Therefore, the line caught between the alignment epoch of current comparator is needed to leak.

Sequential chart in Fig. 5 B shows the grid enable signal 552 of the gate drivers 480 in Fig. 4 C, the CSE enable signal 554 be connected with analog multiplexer 482, control the calibrating signal 556 of calibration switch 426, the comparer enable signal 558 be connected with enable input 472, the current reference signal 560 produced by variable reference current source (it is set to predetermined level and is connected with current input terminal 418 in the repeating of test process) at every turn and the output voltage 562 exported on 410.

CSE enable signal 554 is retained as height, to guarantee that any leakage on line is included in calibration process.In order to prevent tested device 302 from exporting the electric current inputted from any data, grid enable signal 552 is also retained as height.In the first stage 570, calibrating signal 556 is driven high, thus closes calibration switch 426.Another calibrating signal is driven high, to close calibration switch 424.In order to the voltage reset from voltage comparator circuit 408 exports, comparer enable signal 558 is dragged down.Any leakage current from the monitoring cable of tested device 302 is converted into the voltage be stored in capacitor 444.

When the calibrating signal inputing to switch 424 is dragged down and calibrating signal 556 is dragged down thus opens switch 426 subsequently, enter subordinate phase 572.Then, the signal inputing to switch 424 is driven high thus closing switch 424.Small area analysis is output to electric current input 418 from reference current source.This small area analysis value is the minimum value corresponding with the minimum detectable signal of current comparator 400 (MDS) scope.

When comparer enable signal 558 is driven high thus makes voltage comparator circuit 408 can read input, enter the phase III 574.The output of voltage comparator circuit 408 in output 410 just should be, and this represents the positive current compared with leakage current.

When calibrating signal 556 is again driven high thus closes calibration switch 426, enter fourth stage 576.In order to reset the voltage exported from voltage comparator circuit 408, comparer enable signal 558 is dragged down.Any leakage current from the monitoring cable of tested device 302 is converted into the voltage be stored in capacitor 444.

When the calibrating signal inputing to switch 424 is dragged down and calibrating signal 556 is dragged down thus opens switch 426 subsequently, enter five-stage 578.Then, the signal inputing to switch 424 is driven high, thus closing switch 424.Small area analysis is output to electric current input 418 from reference current source.This small area analysis is the minimum value corresponding with the minimum detectable signal of current comparator 400 (MDS) scope, but is the negative current contrary with the positive current in subordinate phase 572.

When comparer enable signal 558 is driven high thus makes voltage comparator circuit 408 can read input, entered for the 6th stage 580.The output of voltage comparator circuit 408 in output 410 should be zero, and this represents the negative current compared with leakage current.

Duplication stages 570,572,574,576,578 and 580.By adjusting the value of bias current, finally, the ratio that the effective output voltage between 1 and 0 triggers reaches the maximal value representing just bias current value.

Fig. 6 is the block diagram of the compensation assembly of the controller 112 of display system 100 in Fig. 1.Compensation assembly comprise aging extraction unit 600, backplane aging/matching module 602, color share/gamma-corrected module 604, OLED aging memory 606 and compensating module 608.Can be any technology including, but is not limited to amorphous silicon, polysilicon, monocrystalline silicon, organic semiconductor and oxide-semiconductor for driving the backboard with electronic component of display system 100.And display system 100 can be any display material (or device) including, but is not limited to LED or OLED.

Aging extraction unit 600 is connected for receiving from the output data of array 102, and these output data are corresponding with the output for testing the aging impact for array 102 based on the input of the pixel of array.Aging extraction unit 600 uses the output of row reference pixel 130 as the baseline for comparing with the output of valid pixel 104a-d, to determine to comprise the burn-in effects that each in the pixel 104a-d on the often row of each row reference pixel 130 is subject to.Alternately, the mean value of the pixel in falling out can be calculated and the value of itself and reference pixel is compared.Color shares/and gamma-corrected module 604 also determines suitable color correction according to this from row reference pixel 130 acquisition number, thus the burn-in effects that compensation pixel is subject to.Baseline for comparing measurement of comparison can be stored in the look-up table in storer 606.Backplane aging/matching module 602 calculates the adjustment being used for the backboard of display and the assembly of electronic product.Compensating module 608 is provided with shares/the input of gamma-corrected module 604, to revise the program voltage of the pixel 104a-d inputed in Fig. 1 thus to compensate burn-in effects from aging extraction unit 600, backplane aging/matching module 602 and color.Compensating module 608 accesses look-up table, and to obtain each pixel basis data in the pixel 104a-d on array 102, described basic data will be combined with calibration data.Compensating module 608 is correspondingly revised based on the value in look-up table and from the program voltage of data to pixel 104a-d that the pixel array of display 102 obtains.

Controller 112 in Fig. 2 is measured the data from the pixel 104a-d in the array of display 102 in Fig. 1, to carry out correctly normalization to the data collected during measurement.For the pixel often arranged, row reference pixel 130 plays booster action in these functions.Row reference pixel 130 can be arranged in the outside of the effective viewing areas (activeviewingarea) represented with the pixel 104a-d of Fig. 1, but this kind of reference pixel also can embed in positive viewing area.Row reference pixel 130 preserves the such as unaged or controlled condition such as aging in a predefined manner, thus affords redress and counteracting information (offsetandcancellationinformation) for the measurement data of the pixel 104a-d in array of display 102.This information helps controller 112 to offset from external sources such as such as room temperatures or such as from the common-mode noise of the system itself such as leakage current of other pixel 104a-d.The weighted mean value of the several pixels on use array 102 also can provide the information about full panel characteristic, to solve such as due to the voltage drop that the resistance on whole panel causes, i.e. and current/resistance (IR) degradation problem.The information applied by known and controlled source of row reference pixel 130 can be used in the backoff algorithm performed by compensating module 608, to reduce the compensating error that any diversity produces.Can use and from the data of the initial baseline measurement collection of panel, multiple row reference pixel 130 be selected.Bad reference pixel is identified, and the reference pixel 130 substituted can be selected to guarantee further reliability.Certainly, should be understood that, in order to calibrate and measure, row reference pixel 132 can be used to replace row reference pixel 130 and row can be used to replace row.

Come in the display to the drift of pixel characteristic at the outside sensing circuit of use, when pixel is provided known input signal in time, sensing circuit reads at least one in electric current, voltage and electric charge from pixel.Read output signal is translated into the drift of pixel-parameters and is used to compensate pixel characteristic change.Mainly easily there is the skew that the sensing circuit produced because of different phenomenons such as such as temperature variation, aging and electric leakages changes in these systems.As described in Figure 10, reference pixel capable (having hatched pixel in Figure 10) can be used to eliminate these impacts from sensing circuit, and these reference lines can be used in array of display.These reference pixels are capable of not to be biased by the mode of burn-in effects substantially.It is capable that sensing circuit reads these reference pixels, also reads normal display line.Afterwards, revise by reference to the readout be worth normal row, to eliminate less desirable impact.Because each row is connected to a sensing circuit, so the method for practicality is the normal pixel using the reference image in row usually to adjust these row.

Main change by being panel not only affects reference pixel but also the global impact of the such as temperature affecting image element circuit etc.In the case, this impact will be eliminated by offset, so the separate compensation that will exist for such phenomenon.

In order to provide the compensation for overall phenomenon when there is no additional compensation factor or sensor, deduct the impact of overall phenomenon from reference pixel.There is diverse ways to calculate the impact of overall phenomenon.But directly impact is:

Average reference value: here, the mean value of reference pixel value is used as the impact of overall phenomenon.Then, this value can be deducted from all reference pixels.Therefore, if use overall phenomenon to modify to reference value, so it will be deducted by from these reference values.Therefore, when revising measurement value by reference to value, the global impact in pixel value will remain unchanged.Therefore, this can compensate such impact.

Main reference pixel: another kind of method uses main reference pixel (main reference pixel can be the subset of reference pixel or diverse reference pixel).Similar with last method, from reference pixel circuit, deduct the mean value of main reference pixel, this causes the impact leaving overall phenomenon in measurement value.

There is the compensation method of the multiple row reference pixel 130 that can utilize in Fig. 1.Such as, in thin film transistor (TFT) is measured, the data value being used for output current needed for row reference pixel 130 is deducted, to export identical electric current from the data value of the pixel 104a-d of the same column active area (pel array 102).The measurement of row reference pixel 130 and pixel 104a-d can occur closely in time, such as, in during identical frame of video.Any difference of electric current represents the burn-in effects that pixel 104a-d is subject to.Controller 112 can use the value of acquisition to calculate the suitable adjustment of the program voltage to pixel 104a-d, to keep identical brightness within the serviceable life of display.Another effect of row reference pixel 130 is for other pixel 104 provides reference current to be used as baseline and to determine that the electric current of those pixels exports the burn-in effects be subject to.Because reference pixel 130 and valid pixel 104 have common data and supply lines, so it is intrinsic in the measurements that some common-mode noises are offset, thus reference pixel 130 can reduced data operation.In order to verify production display during in order to the brightness curve compensating the pixel stored with the use of controller be correct, periodically can measure row reference pixel 132.

For 1080p display, before delivery, 60 to 120 seconds are needed to the measurement of the driving transistors of all driving circuits such as the driving circuit 200 in the such as Fig. 2 on display and OLED, and will driving transistors and the OLED (this causing trouble or non-luminous pixel) of any short circuit and open circuit be detected.The unevenness (this causes brightness irregularities) that it also will detect in driving transistors or OLED performance.This technology can replace the optical detection using digital camera, and this makes the parts not needing this costliness in production equipment.Because color filter is pure optical element, so fully can not detect using the AMOLED of color filter in the mode of electricity.In the case, by the complicacy providing extra diagnostic message also to reduce optical detection potentially, the MAXLIFE of such as Ignis ^tMdeng may be useful to the aging combine with technique optical detection step compensated.

The data that the data that these are measured provides can provide than optical detection are more.Know that whether point defect is that can helping of causing due to short circuit or the driving transistors of open circuit or the OLED of short circuit or open circuit identifies the basic reason in production run or defect.Such as, the most common cause of short circuit OLED drops on glass makes the anode of OLED and the particulate contamination of negative electrode short circuit during processing.The increase of OLED short circuit can show that should close production line carries out reaction chamber cleaning, maybe can start the new source (process, or equipment, or personnel, or the change of material) of searching particle.

Such as MAXLIFE ^tMsystems etc. can be revised process unevenness for the relaxation system compensated burn-in effects, which increase the yields (yield) of display.But the measurement electric current in TFT or OLED and voltage relationship or characteristic are also helpful to diagnosis.Such as, the shape of OLED current-voltage characteristic can disclose the resistance of increase.Possible reason may be the change (in bottom emission AMOLED) of the contact resistance of transistor source class/between drain metal and ITO.If the OLED in the corner of display demonstrates different current-voltage characteristics, so possible reason may be the mask misalignment in manufacture process.

The striped with different OLED current-voltage characteristics on display or border circular areas may cause due to the defect in the manifold that is used in the fabrication process making organic steam disperse.When one is possible, the granule of OLED material may peel off from eminence guard shield and drop on manifold, thus partially obstructing aperture mouth.Measurement data goes out different OLED current-voltage characteristics by with concrete pattern displaying, and this will contribute to interrogating speed ground diagnosis problem.Due to measure accuracy (such as, 4.8 inch display are with the resolution measurement electric current of 100nA) and the measurement of OLED current-voltage characteristic (replacement brightness) itself, so the change using optical detection to find can be detected.

These high-precision data can be used for statistical Process Control, thus identify when processing the control limit of the described control that starts to drift about out.This just carries out corrective action (in the manufacture process of OLED or driving transistors (TFT)) before can making to detect defect in the product completed ahead of time.Owing to sampling to each TFT and OLED on each display, be maximized so measure sample.

If driving transistors and OLED normally work, the reading so in expected range will be returned to each assembly.Pixel-driving circuit requirement, when measuring driving transistors, OLED closes (vice versa), if so driving transistors or OLED are in short circuit, so will other measurement be made inaccurate.If OLED short circuit (so current indication is MAX), so display driver transistor is opened a way (electric current read MIN) by data, but in fact, driving transistors may be can carry out operating or open circuit.If need about the excessive data of driving transistors, so temporarily deenergization voltage (EL_VSS) make it float, by obtaining, this shows that TFT is actually the correct driving transistors being still in open circuit that can carry out operating and measures.

In an identical manner, if driving transistors short circuit, data will show OLED open circuit (but OLED may be can carry out operating or open circuit).If need about the excessive data of OLED, so deenergization voltage (EL_VDD) make it float, by obtaining, this shows that OLED is actually the correct OLED being still in open circuit that can carry out operating and measures.

If OLED and TFT in pixel all shows as short circuit, an element so in pixel will be interrogated speed and be burnt during measuring, and which results in and open a way and enter different states.In table 1 below, these results are summarized.

Table 1

Fig. 7 shows the system diagram of the control system 700 of the brightness for controlling display 702 in time based on different aspect.Display 702 can comprise OLED array or the display device based on other pixel.System 700 comprises file generator (profilegenerator) 704 and decision-making device 706.File generator 704 receives the performance data from OLED property list 710, backboard property list 712 and display specification file 714.For different conditions, file generator 704 generates different brightness file 720a, 720b ... 720n.Here, in order to improve power consumption, display life and picture quality, can based on OLED brightness file 720a, 720b different with backboard information definition ... 720n.And based on different application, people can from brightness file 720a, 720b ... different files is selected in 720n.Such as, can be used for showing the video frequency output such as such as film with the dull and stereotyped brightness file of time correlation, and for brighter application, brightness can with the rate reduction limited.Decision-making device 706 can based on software or hardware and comprise as the factor that program voltage is adjusted application input 730, environmental parameter input 732, backplane aging data input 734 and OLED aging data input 736, to guarantee the suitable brightness of display 702.

In order to ideally compensate display ages, in display characteristic, short-term is separated with secular variation.A method is between measurements with the multiple points on shorter time measurement display.Therefore, rapid scanning can disclose short-term effect, and normal aging extraction can disclose long-term impact.

Exemplifying embodiment before bucking-out system uses conventional drive scheme, wherein, always there is the frame of video be presented on panel and under OLED and TFT circuit is constantly in Voltage force.The calibration of each pixel occurs in the following way: by the gray-scale value of valid pixel is changed into the calibration that expectation value carries out each pixel during frame of video, and described expectation value causes the visual artifact (visualartifact) seeing measured sub-pixel between alignment epoch.If the frame per second of video is X, so convention video drive in, each frame of video pel array 102 in FIG shows 1/X second and panel all the time operation frame of video.By contrast, as shown in Figure 8, frame time is divided into four subframes by the relaxation video drive in this example.Fig. 8 is the sequential chart of the frame 800 comprising video subframe 802, virtual subframe 804, relaxation subframe 806 and replace subframe 808.

Video subframe 802 is first subframes as actual video frame.This frame of video to drive identical mode to produce with convention video, thus uses the video data received from programming input to programme to the whole pel array 102 Fig. 1.Virtual subframe 804 is the empty frame without any real data being sent to pel array 102.Virtual subframe 804 for keeping a period of time by display same frame of video on face 102 before applying relaxation subframe 806.Which increase the brightness of panel.

Relaxation subframe 806 is the 3rd subframes being the black frame of zero as the gray-scale value of blue white (RGBW) sub-pixel of all reddish yellows in pel array 102.This makes panel blackening and all pixels 104 is set to the predefine state being ready for calibration and the insertion of next video subframe.Replacing subframe 808 is the short subframes generated individually to calibrate.When relaxation subframe 806 complete and panel blackening time, next frame of video start data replace the stage.Except the row with replacement data, within this stage, video or clear data is not had to be sent to pel array 102.For the row not carrying out replacing, only the timer of gate drivers is triggered to make the token (token) of whole gate drivers to be shifted.Be scanning in order to accelerate whole panel like this and often can also carry out more measurements by frame.

Another kind method is used for the visual artifact alleviating the sub-pixel of measurement in replacement subframe 808 further.The method completes in the following way: once complete calibration, is just programmed to the row measured by use black again.This makes sub-pixel be back to state before it in relaxation subframe 806.But still have small area analysis by the OLED in pixel, this makes pixel be lit and causes extraneous attention.Therefore, for making the electric current flowing through OLED change its course, using nonzero value to programme to controller 112, keeping OLED to close with the electric current reduced from the driving transistors of pixel.

There is the shortcoming of replacing subframe 808 and be that the time of measuring is restricted to the fraction of whole frame.The number that the sub-pixel which has limited every frame is measured.Acceptable in this working time being limited in pel array 102.But, for the quick base measurement of panel, due to each pixel must be measured, so measuring whole display will be task consuming time.For overcoming this problem, baseline mode is added into relaxation drive scheme.Fig. 8 also show the baseline frame 820 for drive scheme during the base measurement pattern of display.Base measurement frame 820 comprises video subframe 822 and replaces subframe 824.If system is switched to baseline mode, so drive scheme changes, and make only has two subframes in the baseline frame of such as frame 820 grade.Video subframe 822 comprises the normal program data for image.In this example, as shown in Figure 8, substitute subframe (measurement subframe) 824 and there is the duration longer than normal replacement frame.Because can measure more pixel in this frame time, so longer subframe significantly adds the measurement sum of every frame and can realize measuring more accurately of panel.

The steeper slope that Δ V under the OLED pressure time at initial stage offsets (voltage ageing) causes the curve that efficiency declines and Δ V offsets, and for the Δ V of the low value compared with high Δ V scope, this curve shows different.This can produce the Δ η-Δ V curve of nonlinearity, and this Δ η-Δ V curve is to the initial voltage ageing of OLED or very responsive to OLED preaging process.In addition, due to process variances, the Δ V at initial stage offsets the shape (duration and slope) declined and may occur because of the difference of panel to change significantly.

Above, the use of reference pixel and corresponding OLED is illustrated.Because thermal effect affects valid pixel and reference pixel equally, so the use of such reference pixel counteracts the impact that thermal effect is measured Δ V.But, the reference image of the OLED with low-level stress can be used usually to replace use there is no the OLED of aging (zero stress) as the reference pixel such as row reference pixel 130 grade in such as Fig. 1.To the thermal shock of voltage and non-aging OLED similar, therefore low stress OLED still can be used to remove the measurement noises caused because of thermal effect.Meanwhile, because the device based on OLED remaining in same panel has similar manufacturing condition, so there is the OLED of slight stress can as the good reference of impact of neutralisation process difference on the Δ η-Δ V curve of the valid pixel in row.If such OLED is used as reference, so precipitous early stage Δ V skew also will be relaxed.

For use has the OLED of stress as a reference, with constant low current (circuital 1/5 to 1/3) to exerting pressure with reference to OLED, its (for a certain impressed current) voltage must be used to heat problem and the Process Problems of offsetting pixel OLED as follows:

W = \frac{V_{pixelOLED} - V_{refOLED}}{V_{refOLED}}

In this equation, W is the relative voltage ageing obtained divided by the voltage of reference pixel OLED based on the difference between the voltage of valid pixel OLED and the voltage of reference pixel OLED.Fig. 9 shows Figure 90 0 of the drawing 902 of the point of the stress current of the 268uA based on W value.As shown in Figure 90 0, for high pressure OLED, it is close to linear relation as shown that the W value of pixel OLED and brightness decline.

Figure 11 relates to before programming to the sequential chart 1100 of the pixel compensation of the replacement of image element circuit.According to technological parameter, the impact of the such as unfavorable artifact such as charge trap or fast light transition (fastlighttransition) may be subject to by the image element circuit after driving.Such as, amorphous or polysilicon process may cause charge trap, and in charge trap, image element circuit retains the electric charge of residual volume after driving circulation in holding capacitor.Metal oxide process may cause image element circuit during such as fast video sequence in more easily there is fast light transition, during fast light transition, pixel changes rapidly.Before measurement pixel current (to compensate aging, process unevenness or other impact), these artifacts may affect the calibration of image element circuit.In order to compensate these artifacts, time series 1100 has replacement circulation 1102.During replacement circulation 1102, the reset voltage value corresponding with maximum voltage value or minimum amount of voltage that of the technique depended on for manufacturing array of display is used to programme to the image element circuit that will measure.Such as, in the array of display manufactured according to amorphous or polysilicon process, reset voltage value may correspond in complete black value (making image element circuit show the value of black).Such as, in the display using metal oxide process to manufacture, reset voltage value may correspond in full white value (making the value of image element circuit display white).

During replacement circulation 1102, eliminate previous measurement on the impact of image element circuit (such as, residual charge trap in image element circuit), also eliminate any impact (such as, fast light transition) caused due to the short term variations in image element circuit.And then reset circulation 1102, during calibration loop 1104, the extraction data before using based on image element circuit or the calibration voltage of parameter are programmed to image element circuit.Calibration voltage also can based on predefined electric current, voltage or brightness.In calibration loop 1104, subsequently the pixel current of image element circuit is measured, and based on the electric current measured, the extraction data of image element circuit or parameter are upgraded.

During the programming cycle 1106 after and then calibration loop 1104, use video data to programme to image element circuit, wherein said video data is the video data after using updated extraction data or parametric calibration.Then, in the driving circulation 1108 after and then programming cycle 1106, the video data that image element circuit is actuated to based on programming is luminous.

Figure 12 A illustrates has the image element circuit that compensation falls in IR.Because V _monitordo not act on and V during programming _datado not act on, so V in measurement cycle period _monitorand V _datacan be the same line (or linking together).Can between row and column crystal sharing pipe Ta and Tb.Each row can common signal line EM (luminescence).

Figure 12 B be a diagram that the sequential chart of the normal running of the image element circuit shown in Figure 12 A.Signal WR is effective and programming data (V _p) be written in capacitor CS.Meanwhile, signal wire EM disconnect and therefore the opposite side of capacitor CS be connected to reference voltage V _ref.Therefore, the voltage be stored in capacitor CS is (V _ref-V _p).In driving (luminescence) cycle period, signal wire EM is effective and WR disconnects.Therefore, gate source step voltage becomes V _ref-V _pand and V _dDirrelevant.

Figure 12 C is the sequential chart that the direct TFT of the circuit of Figure 12 A reads.Use and for the calibration voltage of known target current, image element circuit is programmed.In the second circulation, RD is effective and passes through V _monitorcarry out read pixel electric current.The V of the second cycle period _monitorvoltage should be enough low to make OLED not open.Calibration voltage is modified until pixel current becomes identical with target current.Modified calibration voltage is used as point in TFT current-voltage characteristic to extract the parameter of this point.Also can be effective and V at WR _datav is passed through when being set to fixed voltage _monitorelectric current is applied to pixel.Now, V _monitorthe voltage of upper generation is the TFT grid voltage corresponding to phase induced current.

Figure 12 D is the sequential chart that the direct OLED in the circuit of Figure 12 A reads.Use closedown voltage to programme to image element circuit, make TFT not provide any electric current.In the second cycle period, RD is effective and passes through V _monitorread OLED electric current.The V of the second cycle period _monitorvoltage is pre-calibrated based on known target current.To V _monitorvoltage is modified until OLED ER effect must be identical with target current.Modified V _monitorvoltage is used as point in OLED current-voltage characteristic to extract the parameter of this point.Signal wire EM off-state effectively can be made to extend at maintenance write line WR simultaneously always and read circulation end.In the case, for reading the residual pixel operation of OLED by identical with step above.Also V can be passed through _monitorelectric current is applied to OLED.Now, V _monitorthe voltage of upper generation is the TFT grid voltage corresponding to phase induced current.

Figure 13 A illustrates the image element circuit of the compensation had based on electric charge.V can be shared between adjacent row _monitorsense wire, and can crystal sharing pipe Ta and Tb between row.V _monitorline can be and V _datathe line that line is identical or and V _dataline connects.In the case, V _dataline can be fixed voltage (V _ref).

Figure 13 B be a diagram that the sequential chart of the normal running of the image element circuit shown in Figure 13 A.WR (write) and RD (reading) line effective time, pass through V _dataline and V _monitorline is by program voltage V _pwith reference voltage V _refbe applied to image element circuit.Reference voltage V _refshould be enough low to make OLED open.Sense wire RD can turn off quickly than write line WR.Interim at this moment, because the function that the electric charge produced will be TFT parameter, so transistor T1 carries out charging by starting to VOLED and therefore a part compensates TFT difference.Because the source class of transistor T1 in programming cycle from supply voltage V _dddisconnect, so pixel is not also by the impact that IR falls.

In the sequential chart of Figure 13 C, depict direct TFT read.Use and for the calibration voltage of known target electric current, image element circuit is programmed.In the second cycle period, RD is effective and passes through V _monitorline read pixel electric current.The V of the second cycle period _monitorvoltage should be enough low to make OLED open.Calibration voltage is modified until pixel current becomes identical with target current.Modified calibration voltage is used as the point in TFT current-voltage characteristic, to extract the parameter of this point.When write line WR is effective and data line V _datawhen being set to fixed voltage, also V can be passed through _monitorelectric current is applied to pixel.Now, V _monitorthe voltage of upper generation is the TFT grid voltage corresponding to phase induced current.

In the sequential chart of Figure 13 D, depict direct OLED read.Use shutoff voltage (offvoltage) to programme to image element circuit, do not provide any electric current to make TFTT1.In the second cycle period, sense wire RD is effective and passes through V _monitorline reads OLED electric current.The V of the second cycle period _monitorvoltage is pre-calibrated for known target current.To V _monitorvoltage is modified until OLED ER effect must be identical with target current.Modified V _monitorvoltage is used as point in OLED current-voltage characteristic to extract the parameter of this point.Emission line EM can be made to be in off-state extend to reading circulation end always and keep write line WR effective.In the case, for reading the residual pixel operation of OLED by identical with step above.Also V can be passed through _monitorelectric current is applied to OLED.Now, V _monitorthe voltage of upper generation is the TFT grid voltage corresponding with phase induced current.

In the sequential chart of Figure 13 E, depict indirect OLED read.Here, to read pixel current with mode like the class of operation drawn in Figure 12.Unique difference is, during programming, RD disconnects and therefore the grid voltage of transistor T1 is set to OLED voltage.Therefore, in order to make pixel current equal target current, calibration voltage needs the impact considering OLED voltage and TFT parameter.This calibration voltage can be used and read the voltage of extraction to extract OLED voltage from direct TFT.Such as, if two target currents are identical, so deduct the calibration voltage extracted by this process will obtain the impact of OLED from being read by direct TFT the calibration voltage that extracts.

Figure 14 illustrates biased pixel circuit, wherein the second reference voltage V _ref2can with supply voltage V _ddidentical, each row and each row can crystal sharing pipe Ta and Tb, and each row can crystal sharing pipe Ta and Tc, and each row can shared pixel monitoring cable V _monitor.In normal running, write line WR and sense wire RD is effective and emission line EM is disabled, pixel voltage monitoring cable V _monitorbe connected to reference current I _refand data line V _databe connected to the program voltage from source class driver.The grid of T1 is charged to the bias voltage relevant to reference current and makes the voltage be stored in capacitor CS be V _pwith the function of bias voltage.

The different phase counter plate that system is manufacturing illustrated can be used herein to analyze, to detect defect.Main detecting step can be performed after panel manufacture, after OLED manufactures and/or after assembling completely.In each stage, the information provided by said system can be used to identify defect, the diverse ways such as such as laser repairing (laserrepair) then can be used to repair these defects.

Figure 15 A illustrates the image element circuit with the signal wire being connected to OLED and TFT, and Figure 15 B illustrates image element circuit and is patterned to the ITO electrode into signal wire.For measuring by counter plate, as shown in fig. 15, the direct-path passing to each pixel for measuring pixel current should be had, or partial electrode pattern can be used for measuring route.In the case of the latter, as shown in fig. 15b, electrode (such as, ITO or other material any) is first patterned as horizontal path, and then, electrode is patterned into pixel after measurement is complete.

Figure 16 illustrates the exemplary configurations of panel and the signal at test period panel.Each other signal is connected to a pad by multiplexer, and described multiplexer has default section that signal is connected to default value.Each signal can be selected by multiplexer, carry out programming or measure the current/voltage/electric charge from pixel with counter plate.

Figure 17 illustrate can be used for factory testing with after backboard manufacture to the image element circuit that the defect in pixel identifies.Based on the image element circuit shown in Figure 17, test is below limited, but different image element circuits also can be used to perform similar test.

In the first test:

WR is that (Data=is high and Data=is low and V for height _dd=high)

Here, I _{th_low}be Data=low time allow minimumly accept electric current, and I _{th_high}what allow when being Data=height the highlyest accepts electric current.

In second test:

Static: WR is high (Data=is high and Data=is low);

Dynamic: WR uprises and WR step-down (the low paramount and Data=of Data=is high to low) after programming.

	I _{static_high}<I _{th_high_st}	I _{static_high}>I _{th_high_st}
			I _{dyn_high}>I _{th_high_dyn}	？	T2: normal
I _{dyn_high}<I _{th_high_dyn}	T2: open circuit	T2: short circuit

I _{th_high_dyn}that high the highest of (datahigh) of data accepts electric current when dynamic programming.

I _{th_high_st}that high the highest of data accepts electric current when static state is programmed.

Also pattern below can be used:

Static: WR is high (Data=is low and Data=is high)

Dynamic: WR uprises and WR step-down (Data=high to low) after programming

Figure 18 is the exemplary pixel circuits that can be used for testing whole display.In the test of whole display:

Pass through V _monitort1 and OLED electric current measured by line.

Condition 1:T1 is normal through back plate testing.

I _{tft_high}may electric current for the highest of TFT electric current of particular data value.

I _{tft_low}may electric current for the minimum of TFT electric current of particular data value.

I _{oled_high}may electric current for the highest of OLED electric current of specific OLED voltage.

I _{oled_low}may electric current for the minimum of OLED electric current of specific OLED voltage.

In another test:

T1 and OLED electric current is measured by monitor;

Condition 2:T1 is open circuit through back plate testing.

In another test:

T1 and OLED electric current is measured by monitor;

Condition 3:T1 is short circuit through back plate testing.

By compensating the defect adjusting correct detection and arrive in the display.For the defect darker than the pixel of surrounding, the pixel of surrounding can be used to provide the additional brightness needed for video/image.Have the distinct methods for providing this additional brightness, such as:

(1) use the pixel of all next-door neighbours, between each one in them, carry out the division of additional brightness.The challenge of the method is, in most of the cases, the part being designated to each pixel is not accurately generated by this pixel.Because the error produced by each surrounding pixel will be added into total error, so error will be very large, this reduce the effect of correction.

(2) one or two pixel in use surrounding pixel generates the additional brightness needed for defect pixel, can switch the position of the valid pixel in compensation, minimize to make local artefacts.

Within the serviceable life of display, some soft defects may cause often opens (always shinny) pixel, and this is concerning to perplex very much often user.The real-time measurement of panel can identify make new advances produce often open pixel, can apply extra voltage to extinguish OLED by monitoring cable subsequently, this makes OLED become dark pixel.And, above-mentioned compensation method can be used to reduce the visual impact of dark pixel.

Computing machine, the technician of software and network field should be understood that, the method of the base measurement of the pixel extracted in array can be performed by controller 112 processor such as grade in such as Fig. 1 or following miscellaneous equipment, described miscellaneous equipment can be by using one or more general-purpose computing system, microprocessor, digital signal processor, microcontroller, special IC (ASIC), Programmable Logic Device (PLD), that field programmable logic device (FPLD) and field programmable gate array (FPGA) etc. realize expediently and be according to as illustrated herein and illustrated instruction and the equipment that is programmed.

In addition, plural computing system or device can substitute any one illustrated controller herein.Therefore, as expected, also such as redundancy (redundancy) be can realize and principle and the advantage of the process of (replication) distributed copied, to improve robustness (robustness) and the performance of illustrated controller herein.

The operation of exemplary base-line data defining method is performed by machine readable instructions.In these examples, machine readable instructions comprises the algorithm performed by (a) processor, (b) controller and/or (c) one or more treating apparatus that other is applicable to.Described algorithm can be embodied in and be stored in such as flash memory, CD-ROM, floppy disk, hard disk drive, in software in the entity medium such as digitized video (general) CD (DVD) or other memory device, but those of ordinary skill in the art it is easily understood that, alternately, whole algorithm and/or some algorithm can be performed by equipment instead of processor, and/or in firmware or specialized hardware, specific implementation is (such as in a well-known manner, can by application-specific IC (ASIC), programmable logic device (PLD) (PLD), field programmable logic device (FPLD), field programmable gate array (FPGA) and discrete logic etc. realize).Such as, the arbitrary of base-line data defining method or all component is realized by software, hardware and/or firmware.And, manually can perform the machine readable instructions of some or all of representatives.

Figure 19 one or more stages (such as, TFT backplate, the panel assembled completely or the panel that completes completely and seal) illustrated for the manufacture at panel 1210 detect the system of OLED display panel 1210.Display panel 1210 is connected to computing machine 1214, to be provided in the ability that each treatment step counter plate carries out testing and verifying by measurement electronic equipment 1211 and probe 1212.Such as, after completing TFT backplate, probe card systems can be used for the performance measuring TFT backplate individually.If TFT backplate is acceptable, forward panel 1210 to next step so subsequently, this can be the OLED depositional phase suddenly.After completing OLED deposition, can measure in order to suitable deposition counter plate 1210 before sealing.After the sealing, again can measure it before panel 1210 is sent to assembly process.

As seen in fig. 20, illustrated display panel 1210 has the probe pad 1220 formed along three edges in four edges of panel.Probe pad also preferably can be formed on panel itself before the OLED depositional phase.Probe pad 1220 is for being provided to a large amount of image element circuits on display panel 1210 by test signal via weld zone (bondingpad) 1230, wherein weld zone 1230 is formed in the outer end of the various signal wires leading to image element circuit.

Figure 21 illustrates probe pad 1220 by multiplexer (MUX) 1240 connection with weld zone 1230, thus the quantity of probe pad needed for reducing, this allows solder pad space length to increase.For guaranteeing that other signal being connected to probe pad 1220 is power supply levels to keep the transistors properly biased, MUX1240 needs each probe pad 1220 to be connected to common signal (Vcom) (such as, source signal and the signal etc.) of often organizing signal.

Figure 22 illustrates the MUX1240 with common signal control and two or more panel signal for each probe pad 1220.Figure 22 illustrates h the panel signal be connected with a probe pad 1220, thus needs 2h the control signal for being connected with probe pad 1220 or being connected with common signal.The connection of panel signal and probe pad 122 is controlled by the first switch 1241 and 1242, and the connection of common signal Vcom and panel signal is controlled by second switch 1243 and 1244.

Suitable solder pad space length for full panel detection is about 150 microns usually.As shown by the data in table 2, the solder pad space length for most conventional configurations meets minimum solder pad space length requirement.But also as shown by the data in table 2, use the multiplexing ratio of 2:1 or larger that solder pad space length can be made to increase, this will make probe simpler.

Table 2 is for the solder pad space length of different display size and resolution

As shown in figure 23, the electronic measurement system 1213 be arranged in probe 1212 can be measured the electrical characteristics of each TFT on display panel 1210 and each OLED and identify defect and uneven.These data are provided to GUI1214 and promote and lower line monitoring cost to obtain higher yields, faster technique, wherein can be used to finely tune each processing step in the described data in GUI1214 place.Illustrate various example of carrying out the technique of finely tuning in fig 23, that is, sputtering and PECVD module 1250, process annealing module 1251, patterning module 1252, laser repairing module 1253, ink jet printing module 1254 and evaporation module 1255.Net result is complete display panel 1256.

Circuit shown in Figure 23 obtains data from measurement electronic equipment 1213, analyzes these data and shows this data with the form of various report, table and picture.In the following table some views are illustrated.

The extraction system illustrated in the U.S. Patent application 13/835124 of by name " SystemsandMethodsforExtrractionofThresholdandMobilityPar ametersinAMOLEDDisplays (system and method for the extraction of the threshold value in displayer and mobility parameters) " such as submitted on March 15th, 2013, various different circuit and algorithm can be used to extract the measured value of different parameters in the different phase of the manufacture of display panel from display panel, are incorporated to by reference herein by the full content of this U.S. Patent application at this.

This detection system can to much potential defect and problem (such as, under sputtering and PECVD step, this detection system can be used to identify the possible cause causing defect or problem, makes it possible to finely tune to revise problem to manufacturing process immediately) identify.The example of this kind of problem and their possible cause is as follows:

For can not the defect that goes out of Direct Recognition by the single measurement of detection system, first time measures and can disclose existing problems, and specifies the extra test finally identifying defect accurately.Example be can through the following steps in arbitrary step carry out the identification of the line defct detected:

1. measure the electric current of different circuit: if electric current is higher than threshold values, then pixel is short-circuited.

2. apply pulse and measure Charger transfer: if the amount of Charger transfer is less than threshold values, then circuit is open circuit.

3. for the signal be connected with DC current (such as, V _ddand V _monitor), electric current can be detected and carry out open defect.

Also can the defect in thin film transistor (TFT) (TFT) be detected.Such as, image element circuit in fig. 24 has and is measured as height and (works as V _data=high, and also work as V _data=high and V _dd=high) signal WR when, need to perform extra test.Table 1 shows different conditions and result how it feels.

For detecting the problem relevant to intermediate annealing, the accurate Vt of each TFT and mobility can be used to adjust intermediate anneal parameters, as follows:

The number of familiar lacunas and type can carry out in identification icon problem (particle, under-exposure/overexposure etc.), as follows:

Familiar lacunas position and defect type can point out the region being suitable for laser repairing (removal material) or ion beam depositing (adding material) exactly, as follows:

Uniformity data also can be used to calibrate continuously each print head for ink jet printing in real time.System knows which print head is used to print each pixel, and therefore can the problem relevant to single print head detect.Then, can adjust the print head being used to print those pixels immediately, as follows:

The exact failure pattern of each OLED can be used to adjust evaporation process, as follows:

(collecting between TFT and OLED detection period) electrical characteristics can be loaded in look-up table, and are used to revise all TFT and OLED unevenness.

Once OLED and TFT is all deposited, just can extra defect be identified.First time measures and can disclose existing problems, and specifies the extra test finally identifying defect accurately.

If produce test sample at the periphery of panel, the more details about overall technological parameter so can be extracted.Usually, this is by intercepting test sample and they be put in independent specialty systemizations from the display of fraction.But by using this detection system, for each panel, this can be done as a part for panel characteristics, as follows.

Metal wire can be made into and carry out resistance test.This can test metal deposition step and etching.

Their characteristic and uniformity test can be carried out to semiconductor layer to be annealed.

Diverse location around panel can constructing structure, to test aligning.

OLED structure can be used to test evaporation and inkjet printing step.

The conventional diagnostic tools used in optical modulation display (such as, AMLCD) is not used emissive display (such as, AMOLED).This is mainly due to the significant difference between modulation type pixel and emission type dot structure.In addition, emission type image element circuit is more complicated and therefore use these details of normal optical diagnostic tool None-identified.

Although reparation and defect analysis need multiple test, but in order to avoid the time delay needed for the detailed scanning to all semiconductor devices, carry out rapid scanning to identify (under array case, described entity is pixel and signal wire) imperfect entity.If the defect detected within the scope of acceptable pre-selected threshold, then continues manufacture process.If at least one defect kind exceedes can accept threshold values, then perform more detailed scanning and in more detail this defect is identified, to determine whether to repair detected defect.If answer is affirmative, then repair-deficiency, and then continue this manufacture process.

Threshold values can be dynamic.Such as, if two different defects detected, the threshold values of so each defect can be different from the threshold value when a defect only being detected in the panel.

Can make to scan optimization in detail based on the result of rapid scanning.Such as, if rapid scanning does not detect any line defct, so just line test can be avoided in scanning in detail.

In rapid scanning, measure (or multiple) voltage or (or multiple) electric current for pixel.If the measured value of pixel within the acceptable range, then this pixel passes through rapid scanning.If the measured value of pixel is outside acceptable scope, so pixel is marked as and breaks down.

The voltage measured or electric current are preferably by the impact of most of possibility defect.Such as, the voltage being provided to the electric current of light-emitting component and/or the junction between image element circuit and radiated element is well suited for the object as rapid scanning.

An example of rapid scanning is to operate beginning as follows: the reference current or the voltage that are defined in the minimum level run in normal pixel.Or reference current or voltage can than the minimum level run in normal pixel also low definition differences.Then, the pixel current measured or voltage and datum are compared.If measured value is greater than reference value, then pixel is by this test.If measured value is less than reference value, then pixel is not by this test.The result of test can be different based on measurement parameter.Such as, if measured value is drive TFT electric current, so TFT can be open circuit, and if measured value is OLED electric current, so OLED can be short circuit.

Or if measured value is less than reference value, then pixel can by test.If measured value is greater than reference value, then pixel is not by this test.Here, the result of test can be different based on measurement parameter.Such as, if measured value is drive TFT electric current, so TFT can be open circuit, and if measured value is OLED electric current, so OLED can be short circuit.

The combination of two kinds of tests can find more defects.

By using biased (monitoring) line or use shared biased (monitoring) line as shown in figure 25 that separate as of fig. 24 to perform detailed scanning.

When using monitoring cable separately to perform line sweep, if the number of the failed pixel in column or row is greater than threshold values, so this row or column is marked as possible faulty line.Other example of defect recognition row is as follows:

If 1. column or row are short-circuited to another column or row, both electric currents in their (or drivers) can be measured when all column (or row)s have identical voltage and at least one in measuring circuit has different voltage time electric current.In case of a short circuit, the electric current needed for two circuits is driven will be higher.

If 2. two row are short-circuited, the pixel of in row is programmed the current/voltage having influence on another pixel (no matter programming to another pixel described with the different current/voltage such as such as zero).In the case, the current/voltage measuring neighbor can identify the column (or row) of short circuit.

3. can measure the quiescent current (voltage) flowing to every bar circuit under different bias conditions.This quiescent current (voltage) can be indirectly measured the impact of driver current by it.Such as, if driver operating current changes (or higher than threshold values) significantly with the change of the bias condition of a circuit, so this means that this circuit is short-circuited.

4. pair transient current (voltage) is measured.If measure electric current not in threshold range, so this circuit can be marked as open circuit.Such as, if transient voltage (electric current) is applied to monitoring cable, the transient current (voltage) that it will produce as the function of stray capacitance.When being aware of the scope of stray capacitance, can the scope of calculating current (voltage).If electric current (voltage) is outside this scope, so this line marker can be open circuit by people.The method of another kind of estimating signal scope measures whole panel, and exceptional value can be detected and be marked as open circuit (if being less than this scope) or short circuit (if being greater than this scope).

5. circuit is charged to certain voltage.When being aware of the scope of stray capacitance of this circuit, the scope of the electric charge be stored in this circuit can be estimated.Measure the circuit electric charge that is stored in this circuit also it and described scope to be compared, this can indicate this circuit be short circuit, open circuit or normally.If this electric charge is less than estimated scope, so this circuit is open circuit.If electric charge is in described scope, so this circuit is normal.If this electric charge does not change, so this circuit is short circuit.The method of another kind of estimation ranges of charge measures whole panel, and exceptional value can be detected and be marked as open circuit (if being less than this scope) or short circuit (if being greater than this scope).

When testing transistor T2 and T3 of the monitoring cable used as of fig. 24 separately, testing procedure can be used for other biased witch often closed, and offset line is connected to signal by described normal pass biased witch during programming cycle.Here, described signal can be the signal from Vdd or the signal by monitoring cable.Not only can use static test but also can dynamic test be used, as follows:

Static:

1. switch closes

2. bias voltage is high or is biased to low

3. switch disconnects

4. bias voltage keep it voltage (if bias voltage during programming for high, then its step-down, and vice versa)

Dynamic: switch uprises and switch disconnects (bias voltage=low) after programming:

1. switch closes

2. bias voltage is high or is biased to low

3. switch disconnects

4. bias voltage change (if bias voltage during programming for high, then its step-down, and vice versa)

If at least one measures electric current or measuring voltage usually by the impact of bias voltage, and under quiescent conditions, switch performance is identical for high bias voltage and low bias voltage, and so this switch is likely open circuit.If situation is not like this, and curtage is not identical for the corresponding situation in Static and dynamic operation, and so this switch may be short circuit.

Detailed scanning step for driving transistors (such as, T1) is as follows:

Measure the curtage at least one operating point place of TFT.

1. if electric current (voltage) is all high in all points, then T1 (drive TFT) is short circuit.

2. if electric current (voltage) is all normal in all points, then T1 (drive TFT) is normal.

If 3. electric current (voltage) does not change and similar with Z-operation point, and switch testing at work, then T1 (drive TFT) is open circuit.

4. if electric current is negative (or direction is different from the direction of TFT) (or voltage is low), then OLED is short circuit.

Some conclusions in these conclusions only can utilize the measurement at a some place and draw.

The detailed scanning step of OLED is as follows:

Measure the curtage at least one operating point place of OLED.

1. if electric current is high (or voltage is low) (on OLED direction), then OLED is short circuit.

2. if electric current (voltage) is normal, then OLED is normal.

If 3. electric current (voltage) does not change and similar with Z-operation point, and switch testing at work, then OLED is open circuit.

4. if electric current is positive (or direction is different from the direction of OLED) (or voltage is for high), then TFT is short circuit.

When using shared monitoring cable as shown in figure 25, the above-mentioned testing procedure of line sweep can be applied for.In addition, if data line is shorted between two pixels with shared monitoring cable, so these two pixels will produce identical electric current (or voltage), and this and any bar data line to be used to carry out programming to these two pixels irrelevant.This can be used to identify shorting data line defect.If multiple pixel shares the circuit for measuring and can not be separated with detected element by this circuit with any switch for some pixels, so need diverse ways to measure different defects.

For group test, TFT and/or OLED that can be used in groups to any one in the test of drive TFT and/or OLED above.Unique difference is, result will demonstrate collective's performance of device.Such as, it can identify the drive TFT in group or the one in OLED is defective.

For examination test, the monitoring cable that a small amount of neighbor in example below uses (use identical RD and WR signal carry out control) row shares, and they can be applied to other similar structure.

(such as, V is passed through for measuring the device that can use other control signal to close _datadrive TFT), the device of a pixel is remained valid, and device in other pixel is closed.In the case, can perform and test with like the test class of the pixel for having the circuit separated.Such as, the measurement to the drive TFT in pixel can be completed as follows:

1., when the drive TFT of other pixel connected with identical monitoring cable is closed, measure the electric current (or voltage) at (or multiple) operating point place of drive TFT (T1);

2. all drive TFT pair being connected to the pixel of identical monitoring cable repeat step (1);

If 3. electric current (or voltage) is in normal range, then all drive TFT are all good;

4. if the measurement electric current (voltage) being connected to the pixel of monitoring cable does not change and similar with Z-operation point, then the drive TFT of this pixel may be open circuit (suppose that switching TFT is tested to pass through);

Can not be changed by the pixel of shared monitoring cable if 5. measure electric current (voltage) for high and their level, then the drive TFT of this pixel may be shorted.Such as, if T1_1 is shorted, when measuring the electric current of T1_1 (T1_2 closedown), electric current will be I _short.When measuring T1_2, electric current will be I _short+ I _{t1_2}.Can find out, only the change of the operating point of T1_2 can affect measurement electric current;

6. if the electric current (voltage) of all sub-pixels is all low but electric current, at different operating points, slight change occurs, then OLED may be shorted.Such as, if the OLED be connected with T1_1 is shorted, then the measurement electric current of T1_1 and T1_2 will be respectively I _short-I _{t1_1}and I _short-I _{t1_2}.By changing the operating point of TFT, measuring electric current will change, but electric current will than much lower under normal circumstances.

When testing the biased witch as analogue means, the open voltage of switch is set to the voltage of state of saturation switch being pushed into operation.Therefore, if drive TFT or OLED are shorted to fixed voltage, so electric current (or voltage) cannot make measurement mechanism saturated, and the impact added in circuit by the electric current (or voltage) of other pixel will be larger.Such as, if T1_1 is shorted, then the voltage at B1_1 place will be roughly V _dd.When measuring T1_1, because T3_1 is in state of saturation and control circuit, so electric current will be I _{t3_1}.When measuring T1_2 (voltage at node A_2 place may be enough high to make the complete conducting of T1_2), electric current will be I _{t3_1}+ I _{t3_2}.Therefore, based on these two measurement results, T1_1 may be shorted.Identical operation can be used for determining whether OLED is shorted.

For one of device that reduces to be shorted biased impact, the voltage that such as Vss etc. are connected with OLED can be set to the voltage close to monitoring cable, to make it minimum on the impact of TFT measurement.By Vdd being set as the similar setting carrying out for TFT short circuit close to the voltage of monitoring cable.

The impact of OLED (or TFT) can be transferred on another device (such as, drive TFT).Such as:

1., except a pixel, all drive TFT shared in the pixel of offset line (monitoring cable) are all turn off.

2. enable the voltage at the electrode place of OLED be set (such as, the switch affecting voltage disconnects, and such as, when pixel in fig. 2, T3_1 and T3_2 turns off) by OLED.

3. then, the electric current of drive TFT is measured.

If 4. OLED is open circuit, the electric current of drive TFT will close to zero (or the voltage at the drive TFT terminal place be connected with OLED will be height).

5. if OLED is normal, then image element circuit will in normal range.

If 6. OLED is shorted, another test (such as, biased witch is to be used as analogue means) may be needed.

Although illustrated and described specific embodiment of the present invention and application, but should be understood that, the invention is not restricted to described accurate structure and composition herein, and when not departing from the spirit and scope of the present invention as defined by the appended claims, various amendment of the present invention, change and change are obvious from explanation above.

This application claims the right of priority of the U.S. Patent application 14/291231 that on May 30th, 2014 submits to, at this, full content of this U.S. Patent application is incorporated to herein by reference.

Claims

1. during the manufacture of the semiconductor devices based on array, detect a method for the defect of described semiconductor devices, described method comprises the steps:

The defect in the described entity forming described semiconductor devices is detected in the interstage manufacturing the polytype entity forming described semiconductor devices;

Determine whether the defect detected has exceeded the pre-selected threshold of the type of the described entity detecting defect;

If described in the defect that detects do not exceed described pre-selected threshold, then continue the manufacture of described semiconductor devices; And

If described in the defect that detects exceed described pre-selected threshold, then the type of the described defect detected is identified, repairs the defect that identifies and continue the manufacture of described semiconductor devices.

2. the method for claim 1, wherein the described semiconductor devices based on array is active matrix organic light-emitting device (AMOLED) display panel.

3. method as claimed in claim 1 or 2, wherein, described polytype main body at least comprises driving transistors, OLED and signal wire.

4. the method for claim 1, wherein described pre-selected threshold changes along with the number increase of the described defect detected.

5. the method for claim 1, wherein by according to detect defect described entity type and the described type of test to defect that customize identifies.

6. the method for claim 1, wherein in described entity, detect defect by following manner: measure voltage in single pixel or electric current and the pre-selected threshold of measured value and described voltage or electric current compared.

7. method as claimed in claim 6, wherein, the described electric current of measurement is the electric current of the luminescent device flowing to described pixel.

8. method as claimed in claim 6, wherein, the described voltage of measurement is the voltage of the junction of luminescent device in image element circuit and described pixel.

9. the method for claim 1, wherein, in described entity, defect is detected: based on the minimum level pre-chosen current of the curtage in normal pixel or the datum of voltage, and compared with the described datum of corresponding preliminary election by the curtage of measurement by following manner.