CN108369892A - The processing method of object, temporary fixing composition, semiconductor device and its manufacturing method - Google Patents

The processing method of object, temporary fixing composition, semiconductor device and its manufacturing method Download PDF

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Publication number
CN108369892A
CN108369892A CN201680055127.0A CN201680055127A CN108369892A CN 108369892 A CN108369892 A CN 108369892A CN 201680055127 A CN201680055127 A CN 201680055127A CN 108369892 A CN108369892 A CN 108369892A
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layer
supporter
light
processing method
fused
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CN108369892B (en
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森隆
水野光
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JSR Corp
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JSR Corp
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Priority claimed from PCT/JP2016/071876 external-priority patent/WO2017056662A1/en
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J161/00—Adhesives based on condensation polymers of aldehydes or ketones; Adhesives based on derivatives of such polymers
    • C09J161/34—Condensation polymers of aldehydes or ketones with monomers covered by at least two of the groups C09J161/04, C09J161/18 and C09J161/20
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    • C09J161/00—Adhesives based on condensation polymers of aldehydes or ketones; Adhesives based on derivatives of such polymers
    • C09J161/18—Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or their halogen derivatives only
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G16/00—Condensation polymers of aldehydes or ketones with monomers not provided for in the groups C08G4/00 - C08G14/00
    • C08G16/02—Condensation polymers of aldehydes or ketones with monomers not provided for in the groups C08G4/00 - C08G14/00 of aldehydes
    • C08G16/0212—Condensation polymers of aldehydes or ketones with monomers not provided for in the groups C08G4/00 - C08G14/00 of aldehydes with acyclic or carbocyclic organic compounds
    • C08G16/0218—Condensation polymers of aldehydes or ketones with monomers not provided for in the groups C08G4/00 - C08G14/00 of aldehydes with acyclic or carbocyclic organic compounds containing atoms other than carbon and hydrogen
    • C08G16/0225—Condensation polymers of aldehydes or ketones with monomers not provided for in the groups C08G4/00 - C08G14/00 of aldehydes with acyclic or carbocyclic organic compounds containing atoms other than carbon and hydrogen containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G16/00—Condensation polymers of aldehydes or ketones with monomers not provided for in the groups C08G4/00 - C08G14/00
    • C08G16/02—Condensation polymers of aldehydes or ketones with monomers not provided for in the groups C08G4/00 - C08G14/00 of aldehydes
    • C08G16/04—Chemically modified polycondensates
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • C08G8/20—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with polyhydric phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/28—Chemically modified polycondensates
    • C08G8/30—Chemically modified polycondensates by unsaturated compounds, e.g. terpenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/28—Chemically modified polycondensates
    • C08G8/36—Chemically modified polycondensates by etherifying
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J161/00—Adhesives based on condensation polymers of aldehydes or ketones; Adhesives based on derivatives of such polymers
    • C09J161/04—Condensation polymers of aldehydes or ketones with phenols only
    • C09J161/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • C09J161/14—Modified phenol-aldehyde condensates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
    • C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

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  • Chemical & Material Sciences (AREA)
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  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The present invention provides a kind of processing movement processing carrying out object in the state that object to be processed is temporarily fixed on supporter via temporary fixed material, then the method detached supporter with object using light irradiation partition method, can prevent the light deterioration of the object.A kind of processing method of object, including：There is supporter, the temporary fixed material comprising layer (I) and object to be processed, the layer (I) to contain the polymer (A) with structural unit (A1) for the step of forming laminated body, the laminated body；The step for being processed, and/or making laminated body to move to object to be processed；The step of self-supporting side is to layer (I) irradiation light；And the step of detaching supporter with object to be processed.[in formula (A1), Ar is fused-ring aromatic ring；R1For hydrogen atom or the alkyl of carbon number 1~20；R2For halogen atom or the alkyl of carbon number 1~20；R3For hydrogen atom or organic group；The integer that a is 1 or more, the integer that b is 0 or more.]

Description

The processing method of object, temporary fixing composition, semiconductor device and its manufacture Method
Technical field
The present invention relates to a kind of processing method of object, temporary fixing composition, semiconductor device and its manufacturers Method.
Background technology
It is proposed has：The objects to be processed such as semiconductor wafer are being adhered to the supporters such as glass substrate via temporary fixed material In the state of upper, the side of the working processes such as grinding back surface and photosensitive etching and processing (photofabrication) is carried out to object Method.For the temporary fixed material it is necessary that：Object can be temporarily fixed on supporter in working process, Supporter and object can be easily separated after working process.
It is proposed has：In the separating treatment, by the laminated body with supporter, temporary fixed material and object In the temporary fixed material irradiate the radianies such as ultraviolet light and infrared ray, so that the adhesion of temporarily fixed material is reduced, then The method (referring to patent document 1~patent document 3) that supporter is detached with object.It will also be carried out below to temporarily fixing material Light irradiates and makes the method for detaching supporter with object after the reduction of its adhesion or will branch when carrying out light irradiation The method that support body is detached with object is known as " light irradiation partition method ".
The temporary fixed material having used in light irradiation partition method is disclosed in 1~patent document of patent document 3.Herein, specially There is the temporary fixed material of sharp document 1 adhesive linkage and peeling layer, the temporary fixed material of patent document 2 to have then Layer and the separating layer containing the polymer with light absorption, the temporary fixed material of patent document 3 have adhesion coating, Photoresist layer and photothermal transformation layer.
Existing technical literature
Patent document
Patent document 1：No. 2014/0106473 bulletin of US publication
Patent document 2：Japanese Patent Laid-Open 2012-106486 bulletins
Patent document 3：Japanese Patent Laid-Open 2011-076767 bulletins
Invention content
Problem to be solved by the invention
Workpiece is deteriorated because of the light that light irradiates used in partition method sometimes, therefore, it is necessary to by making separation Layer absorbs the light, prevents object from deteriorating preventing the light from reaching object.However, separating layer is because in working process Heat and deteriorate, there are the following problems for result：Separating layer is unable to fully absorb the light, and the light reaches object.
Problem of the invention is that provide one kind being temporarily fixed to supporter via temporary fixed material by object to be processed The processing movement processing that object is carried out in the state of upper, is then detached supporter with object using light irradiation partition method Method, the light deterioration of the object can be prevented.
Technical means to solve problem
The inventors of the present invention people has carried out making great efforts research in order to solve the problem.It is as a result, it has been found that using having following structure At object processing method can to solve the problem, so as to complete the present invention.
That is, the present invention is for example related to [1] below~[16].
[1] a kind of processing method of object, including：(1) the step of forming laminated body, the laminated body has support Body, temporarily fixed material and object to be processed, herein, the temporary fixed material includes layer (I), and the object is held in institute It states on temporarily fixed material, the layer (I) contains the polymer (A) with structural unit shown in following formula (A1)；(2) to described Object is processed, and/or makes the step of the laminated body movement；(3) from the support side to the layer (I) irradiation light The step of；And (4) the step of detaching the supporter with the object.
[changing 1]
[in formula (A1), Ar is fused-ring aromatic ring；-OR1To be bonded on the fused-ring aromatic ring Base, R1For hydrogen atom or the alkyl of carbon number 1~20 ,-OR1It, can be mutually the same also different there are multiple；R2For The base being bonded on the fused-ring aromatic ring is the alkyl of halogen atom or carbon number 1~20, R2There are multiple feelings It, can be mutually the same also different under condition；R3For hydrogen atom or organic group, R3It can be mutually the same also different；A be 1 or more it is whole Number, b are the integer of O or more]
[2] processing method for the object that [1] is recorded according to, wherein the temporary fixed material includes solid in turn Layer (II).
[3] processing method for the object that [2] are recorded according to, wherein the laminated body is according to the supporter, institute State layer (I), the adhesion agent layer (II) and the object to be processed sequence and have each element.
[4] processing method for the object that any one of [1]~[3] are recorded according to, wherein in the step (1) In, form at least object to be processed with wiring layer on temporary fixed material.
[5] processing method for the object that [4] are recorded according to, wherein the processing in the step (2) includes that will select It is configured on the wiring layer from least one of semiconductor wafer and semiconductor chip.
[6] processing method for the object that any one of [1]~[5] are recorded according to, wherein in the step (3) Light is ultraviolet light.
[7] processing method for the object that [6] are recorded according to, wherein the ultraviolet light is wavelength 300nm~400nm Ultraviolet light.
[8] processing method for the object that any one of [1]~[7] are recorded according to, wherein the thickness of the layer (I) It is 0.1 μm~500 μm.
[9] processing method for the object that any one of [1]~[8] are recorded according to, wherein in the formula (A1) The fused-ring aromatic ring is naphthalene nucleus.
[10] processing method for the object that any one of [1]~[9] are recorded according to, wherein in the formula (A1) R1For hydrogen atom or alkynyl.
[11] a kind of temporary fixing composition contains the polymer with structural unit shown in following formula (A2) (A)。
[changing 2]
[in formula (A2), Ar is fused-ring aromatic ring；-OR1To be bonded on the fused-ring aromatic ring Base, R1For hydrogen atom or the alkyl of carbon number 1~20 ,-OR1It, can be mutually the same also different there are multiple；R2For The base being bonded on the fused-ring aromatic ring is the alkyl of halogen atom or carbon number 1~20, R2There are multiple feelings It, can be mutually the same also different under condition；R3For hydrogen atom or organic group, R3It can be mutually the same also different；A1 be 2 or more it is whole Number, the integer that b is 0 or more]
[12] the temporary fixing composition that [11] are recorded according to, and then contain solvent.
[13] the temporary fixing composition that [11] or [12] are recorded according to, wherein the temporary fixing composition 100 mass % of solid constituent contained in the polymer (A) content ratio be 50 mass % or more.
[14] a kind of manufacturing method of semiconductor device utilizes the place that any one of [1]~[10] are recorded according to Reason method is processed object and manufactures semiconductor device.
[15] a kind of manufacturing method of semiconductor device, including：(1) the step of forming laminated body, the laminated body has Supporter, temporarily fixed material and wiring layer, herein, the temporary fixed material includes layer (I), and the wiring layer is formed in institute It states on temporarily fixed material, the layer (I) contains the polymer (A) with structural unit shown in the formula (A1)；(2) described The step of configuration is selected from least one of semiconductor wafer and semiconductor chip on wiring layer；(3) from the support side pair The step of layer (I) irradiation light；And (4) by the supporter and the step of the wiring layer separation.
[16] a kind of semiconductor device is obtained using the manufacturing method that [14] or [15] are recorded.
The effect of invention
According to the present invention, it is possible to provide a kind of that object to be processed is temporarily fixed on supporter via temporary fixed material The processing movement processing of object, the side for then detaching supporter with object using light irradiation partition method are carried out under state Method can prevent the light deterioration of the object.
Description of the drawings
Fig. 1 is the sectional view of an embodiment of the laminated body formed in the present invention.
Specific implementation mode
Hereinafter, for the laminated body formed in the present invention, including constituting the raw material of the temporary fixed material of the laminated body Composition, that is, temporary fixing composition illustrates inside, then to the processing method of object, semiconductor device and its system The method of making illustrates.
In the present invention, so-called temporary fixed material refers to when object to be processed is processed and/or is moved, in order to right As object will not self-supporter deviate the material that object is temporarily fixed to use on supporter by mobile mode.So-called processing Object refers to object (such as the subsequent steps (1) by working process or mobile processing in subsequent steps (2) Or the stage in step (2)), in addition, also referring to sometimes by treated the object (such as subsequent steps (3) or step Suddenly the stage in (4)).Hereinafter, also object to be processed is referred to as " object ".
1. laminated body
It is formed by laminated body in the present invention, the object to be processed as processing or mobile object is via temporarily solid Determine material and is temporarily fixed on supporter.The temporary fixed material is clamped by object and supporter in one embodiment.
Temporarily fixed material includes the layer (I) (below also known as " separating layer (I) ") containing aftermentioned polymer (A), one In embodiment, including separating layer (I) and adhesion agent layer (II).The laminated body is preferably in supporter and adhesion agent layer (II) there is separating layer (I) between.That is, the laminated body preferably according to supporter, separating layer (I), adhesion agent layer (II) and The sequence of object and have each layer.
Separating layer (I) contains polymer (A).If to the aftermentioned light of separating layer (I) irradiation, described in polymer (A) absorption Light, polymer (A) decompose or go bad.Because of the decomposition or go bad, the intensity or adhesion of separating layer (I) are before and after light irradiation It reduces.By applying external force to laminated body, cohesion destruction is generated in separating layer (I), or in separating layer (I) and be contacted with institute It states and generates interfacial failure between the layer of layer.Therefore, by after photo-irradiation treatment laminated body apply external force, can by supporter with Object is easily separated.
Temporarily fixed material is other than separating layer (I), can also have and be in direct contact or clip other layers and shape with the layer (I) At adhesion agent layer (II).In this way, the temporary fixed material with 2 layers or more of layer can for example balance well with protected object Possessed by object when the adherence separation property of circuit face, supporter and object, photo-irradiation treatment used light blocking The functions such as heat resistance when property and working process when photo-irradiation treatment.
The example of the laminated body is shown in Figure 1.The laminated body 1 has supporter 10, is formed on supporter 10 Temporary fixed material 20 and the object 30 that is temporarily fixed on supporter 10 by temporarily fixing material 20.Temporarily fixed material 20 With the adhesion agent layer (II) 21 contacted with object 30 and it is formed on the layer (II) 21 and is contacted with supporter 10 Separating layer (I) 22.In the example, the temporary fixed material with adhesion agent layer (II) is shown, but be alternatively and do not have the layer (II) temporary fixed material.
Temporarily fixed material can also have arbitrary other layers other than layer (I) and layer (II).According to supporter, point Absciss layer (I), the sequence of adhesion agent layer (II) and object and in the case of the laminated body with each element, such as can be in layer (I) middle layer is set between layer (II), in addition, also can be layer (I) is between supporter or layer (II) is set between object Set other layers.It especially preferably include the temporary fixed material of 2 layers of layer (I) and layer (II).
The overall thickness of the temporary fixed material can be irradiated according to the size, working process and light of the temporary stationary plane of object The degree of required heat resistance and the adhesion of light-proofness and object and supporter in processing and arbitrarily select.Institute The overall thickness for stating temporarily fixed material is usually 0.2 μm~1000 μm, preferably 0.2 μm~500 μm, more preferably 1 μm~300 μ m.In addition, the thickness of each layer of layer (I) and layer (II) is usually separately 0.1 μm~500 μm, preferably 0.1 μm~250 μm, more preferably 0.5 μm~150 μm.If these thickness is in the range, temporarily fixed material has to by object Temporary fixed sufficient retentivity, object will not fall off in working process or mobile processing from temporary stationary plane.
Various working processes of the temporary fixed material required by the scene of modern economic activities, such as a variety of materials table Whens the miniaturization working process in face, the installation of various surfaces, the carrying etc. of semiconductor wafer and semiconductor chip, can suitably it be used as The temporary fixed material of object.
[separating layer (I)]
Separating layer (I) contains polymer described below (A).Separating layer (I) for example can be by containing the temporary of polymer (A) Fixing composition is formed.Temporary fixing composition can also contain solvent.
An example, that is, the semiconductor wafer and semiconductor chip of the object of processing object typically and light fugitive, if by Light irradiation then deteriorates sometimes.Separating layer (I) must stop the light so that the light used in light irradiation partition method does not reach Object.Even if in addition, at the working process for the state progress being temporarily fixed to object on supporter, such as plating After the high-temperature process such as reason, separating layer (I) preferably also can stop the light.
Separating layer (I) containing polymer (A) is low to the light transmittance of the light used in photo-irradiation treatment.That is, separating layer (I) light transmittance under the wavelength of the light used in photo-irradiation treatment, the light transmittance under such as wavelength 355nm are preferably 10% T hereinafter, more preferably 5%T hereinafter, in turn be preferably 1%T or less.
Separating layer (I) containing polymer (A) can also maintain even if for example after the high-temperature process by 300 DEG C or so To the low-transmittance of the light used in photo-irradiation treatment.That is, to separating layer (I) under nitrogen flowing with 300 DEG C of progress 10 of temperature Light transmittance under the wavelength of light after minute heat treatment, used in photo-irradiation treatment, the light transmission under such as wavelength 355nm Rate is preferably 10%T hereinafter, more preferably 5%T is hereinafter, be preferably 1%T or less in turn.
Therefore, separating layer (I) can prevent the light used in photo-irradiation treatment from reaching the object of processing object, can prevent The deterioration of the object.Separating layer (I) be because polymer (A) absorbs the light and decompose or it is rotten due to generate supporter with it is right As the layer of the separation of object, and also it is the layer of the light used in blocking photo-irradiation treatment.
The light transmittance of separating layer (I) can be measured as described below.It is formed comprising transparent substrate and separating layer (I) Laminated body.For the laminated body, using spectrophotometer, and baseline (baseline) optionally is carried out to the substrate and is corrected And the light transmittance (%T) of the laminated body is measured, obtain the light transmittance (%T) of separating layer (I).
<Polymer (A)>
Polymer (A) has structural unit shown in formula (A1) (below also known as " structural unit (A1) ").
[changing 3]
In formula (A1), the details of each symbol is as described below.
Ar is fused-ring aromatic ring, preferably fused-ring aromatic hydrocarbon ring.Constitute fused-ring aromatic ring Number of rings (example：Benzene nucleus number) it is preferably 2~5, more preferably 2~3, and then preferably 2.As fused-ring aromatic ring, can arrange Lift naphthalene nucleus, Azulene (azulene) ring, anthracene nucleus, phenanthrene ring, pyrene ring,Ring, triphenylene (triphenylene) ring, ring, with regard to separating layer (I) light transmittance is difficult to because for the increased aspect of heat in heat treatment, preferably naphthalene nucleus.
-OR1For the base being bonded on the fused-ring aromatic ring.R1For hydrogen atom or the alkyl of carbon number 1~20.Make For the alkyl of carbon number 1~20, such as can enumerate：Methyl, ethyl, n-propyl, isopropyl, normal-butyl, tertiary butyl, amyl, hexyl, The alkyl of the carbon numbers such as heptyl, octyl, nonyl, decyl 1~20；The naphthenic base of the carbon numbers such as cyclopenta, cyclohexyl 3~20；Phenyl, naphthalene The aryl of the carbon numbers such as base 6~18；The alkynyl of the carbon numbers such as propargyl 2~20.Just with other layers of adherence or separating layer (I) Light transmittance is difficult to because for the increased aspect of heat in working process, R1Preferably hydrogen atom or alkynyl, more preferably hydrogen atom Or propargyl.-OR1It, can be mutually the same also different there are multiple.
R2For the base being bonded on the fused-ring aromatic ring.R2For halogen atom or the alkyl of carbon number 1~20.R2 It, can be mutually the same also different there are multiple.
R3For hydrogen atom or organic group.R3It can be mutually the same also different.
The integer that a is 1 or more.Think the Ar-OR in structural unit (A1)1Feelings of the part in such as a integers for being 2 or more Under condition, the high quinone structure of light-proofness is formed by the heat treatment of high temperature.For the aspect that quinone structure is formed, a is preferably 2 Above integer, more preferably 2~4 integer, and then preferably 2.The integer that b is 0 or more, preferably 0~4 integer, more Preferably 0~2 integer.For example, in the case where Ar is naphthalene nucleus, the integer that a is 1~6, the integer that b is 0~4,1≤a+b≤ 6。
As R2In halogen atom, such as can enumerate：Fluorine, chlorine, iodine.
As R2In carbon number 1~20 alkyl, such as can enumerate：Methyl, ethyl, n-propyl, isopropyl, normal-butyl, The alkyl of the carbon numbers such as tertiary butyl, amyl, hexyl, heptyl, octyl, nonyl, decyl 1~20；The carbon numbers such as cyclopenta, cyclohexyl 3~ 20 naphthenic base；The aryl of the carbon numbers such as phenyl, naphthalene 6~18.
As R3In organic group, such as can enumerate：Alkyl, naphthenic base, aryl, furyl, thienyl.In R3In, as Alkyl, such as the alkyl of the carbon numbers such as methyl, ethyl, propyl 1~20 can be enumerated, as naphthenic base, such as cyclopenta, ring can be enumerated The naphthenic base of the carbon numbers such as hexyl 3~20, as aryl, such as can enumerate the carbon numbers such as phenyl, naphthalene, anthryl, fluorenyl, pyrenyl 6~ 18 aryl.
In the organic group, at least one hydrogen atom contained in alkyl, naphthenic base and aryl also can be through being selected from carbon number 1 ~20 alkyl, alkoxy, hydroxyl, nitro and the halogen of the naphthenic base of carbon number 3~20, the aryl of carbon number 6~18, carbon number 1~20 At least one of plain atom base replaces.Such as it can enumerate：Aryl substituted alkyl, aryl substituted cycloalkyl, alkyl substituting aromatic base, Naphthenic base substituted aryl, alkyl substituted aryl, alkoxy substituted aryl, hydroxyl substituted aryl, nitro substituted aryl, halogen atom Substituted aryl.
In structural unit (A1), " base for being bonded to fused-ring aromatic ring " can also be bonded to multiple ring (examples：Benzene Core) arbitrary ring on.In addition, (1) is in same structure unit (A1), there are multiple-OR1When ,-OR1Condensation polycyclic can be bonded to On same ring contained by aromatic ring, it can also be bonded on different rings；(2) there are multiple R in same structure unit (A1)2 When, R2It can be bonded on the same ring contained by fused-ring aromatic ring, can also be bonded on different rings.
-C(R3)2To be bonded to the base of the divalent on fused-ring aromatic ring.In-C (R3)2-Ar(OR1)a(R2)b-C (R3)2In ,-C (R3)2It can be bonded on the same ring contained by fused-ring aromatic ring, can also be bonded on different rings. Specifically, in the case where Ar is naphthalene nucleus, two-C (R3)2It can be bonded on the same benzene nucleus contained by naphthalene nucleus (for example, following 1) it, can also be bonded on different benzene nucleus (for example, following 2).
[changing 4]
As-C (the R in structural unit (A1)3)2Bond position such as can be enumerated in the case where Ar is naphthalene nucleus： 1,2,1,3, Isosorbide-5-Nitrae position, 1,5,1,6,1,7,1,8,2,3,2,4,2,5,2,6,2,7,2,8 Position, 3,4,3,5,3,6,3,7,3,8,4,5,4,6,4,7,4,8.
Structural unit (A1) is preferably the structural unit (below also known as " structural unit (A2) ") represented by formula (A2).Institute In the case of stating, have the tendency that the light-proofness for the high sensitivity and separating layer (I) that separating layer (I) irradiates light is excellent.
[changing 5]
In formula (A2), Ar, R1~R3And b respectively with the same symbol in formula (A1) be identical meanings, a1 be 2 or more it is whole Number, more preferably 2~4 integer, and then preferably 2.
In 100 mass % of polymer (A), the content of structural unit (A1) is usually 80 mass % or more, preferably 90 matter Measure % or more, more preferably 99 mass % or more.If content is in the range, there is the sensitivity that can get and irradiated to light High and the excellent separating layer (I) of light-proofness tendency.The content is available13C nuclear magnetic resonance (13C Nuclear Magnetic Resonance,13C NMR) it is measured.
Polymer (A) is measured using gel permeation chromatography (Gel Permeation Chromatography, GPC) The weight average molecular weight (Mw) of polystyrene conversion be usually 500~30,000, preferably 1,000~15,000, in turn Preferably 1,300~10,000.If Mw is in the range, the excellent layer of film thickness uniformity (I) can be formed.By the measurement of Mw The details of method is recorded in embodiment.
Polymer (A) can be used alone one kind, also can and with two or more.
In 100 mass % of solid constituent contained in temporary fixing composition, the content of polymer (A) is usually 15 matter Measure % or more, the preferably 20 mass % of mass %~100, and then preferably 25 mass of mass %~100 %.In an embodiment In, in the 100 mass % of solid constituent contained by temporary fixing composition, the content of polymer (A) be, for example, 40 mass % with Upper, 50 mass of mass %~100 % or 60 mass of mass %~100 %.So-called solid constituent refers to all other than solvent Ingredient.If the content of polymer (A) is in the range, with regard to the adherence of separating layer (I), separation property, light-proofness and heat-resisting Property aspect for preferably.
R1Polymer (A) for hydrogen atom is preferably that the condensation with the-OH being bonded on fused-ring aromatic ring is more The novolac resin of ring aromatics and aldehyde compound.In addition, R1It is excellent for the polymer (A) of the alkyl of carbon number 1~20 It is selected as by using R1Halide (R shown in X1Indicate that the alkyl of carbon number 1~20, X indicate that the halogens such as chlorine atom, bromine atom are former Son)-the OH of the novolac resin is carried out to replace novolac resin obtained by substitution reaction.
The novolac resin for example can be by making the fused-ring aromatic in the presence of acidic catalyst It closes object and the aldehyde compound addition condensation and obtains.As reaction condition, in a solvent, make the fused-ring aromatic chemical combination Object reacts 0.5 hour~10 hours or so with the aldehyde compound at usually 40 DEG C~200 DEG C.
As the fused-ring aromatic compound, such as formula (a1) compound represented can be enumerated.
[changing 6]
a(HO)-Ar′-(R2)b(a1)
In formula (a1), Ar ' is fused-ring aromatic ring corresponding with the Ar in formula (A1) ,-OH and R2To be bonded to State the base on fused-ring aromatic ring, R2, a and b and the same symbol in formula (A1) be identical meanings.
It as fused-ring aromatic compound, such as can enumerate in formula (a1), Ar ' is the naphthalene derivatives of naphthalene nucleus, specifically For can enumerate：1,3- dihydroxy naphthlene, 2,3- dihydroxy naphthlenes, 2,4- dihydroxy naphthlenes, 2,5- dihydroxy naphthlenes, 2,6- dihydroxy naphthlenes, The dihydroxy naphthlenes such as 2,7- dihydroxy naphthlenes, 2,8- dihydroxy naphthlenes, 3- methyl -2,6- dihydroxy naphthlenes；The monohydroxies such as alpha-Naphthol, betanaphthol Naphthalene.
Fused-ring aromatic compound can be used alone one kind, also can and with two or more.
As the aldehyde compound, such as can enumerate：Formula (a2) compound represented, formula (a3) compound represented, formula (a4) compound represented.
[changing 7]
In formula (a2)~formula (a4), R31And R32With the R in formula (A1)3For identical meanings；In formula (a3), n1 is 2 or more Integer, for example, 2~12 integer；In formula (a4), n2 be 2 or more integer, such as 2~12 integer.
As the aldehyde compound, such as can enumerate：The R such as formaldehyde, paraformaldehyde, trioxanes31=R32The chemical combination of=hydrogen Object；The R such as acetaldehyde, propionic aldehyde31=hydrogen and R32The compound of=alkyl；Benzaldehyde, naphthaldehyde, anthraldehyde, fluorenes formaldehyde, pyrene formaldehyde etc. R31=hydrogen and R32The compound of=aryl；The R such as phenylacetaldehyde, naphthylacetaldehyde, benzenpropanal31=hydrogen and R32The change of=aryl substituted alkyl Close object；The R such as tolyl aldehyde, ethylo benzene formaldehyde, butyl benzaldehyde31=hydrogen and R32The compound of=alkyl substituting aromatic base；Ring penta The R such as benzaldehyde, cyclohexyl benzene formaldehyde31=hydrogen and R32The compound of=naphthenic base substituted aryl；The R such as phenyl benzaldehyde31=hydrogen And R32The compound of=alkyl substituted aryl；The R such as methoxybenzaldehyde, methoxy naphthyl aldehyde, dimethoxy naphthaldehyde31=hydrogen And R32The compound of=alkoxy substituted aryl；The R such as hydroxy benzaldehyde, Hydroxynaphthaldehyde31=hydrogen and R32=hydroxyl substituted aryl Compound；The R such as nitrobenzaldehyde31=hydrogen and R32The compound of=nitro substituted aryl；The R such as chlorobenzaldehyde31=hydrogen and R32= The compound of halogen atom substituted aryl；Furfural (furfuraldehyde), thiophenecarboxaldehyde.
As the acidic catalyst, such as can enumerate：Hydrochloric acid, nitric acid, sulfuric acid, formic acid, oxalic acid, acetic acid, methanesulfonic acid, camphor tree Brain sulfonic acid, p-methyl benzenesulfonic acid (tosic acid), trifluoromethanesulfonic acid.It is acid relative to 1 mole of fused-ring aromatic compound The usage amount of catalyst is usually 0.01 mole~10 moles.
In the addition condensation, relative to 1 mole of fused-ring aromatic compound, the usage amount of aldehyde compound is usual It is 1 mole or more.It is described to make in the case where aldehyde compound is formula (a3) compound represented or formula (a4) compound represented Dosage is the amount to be converted with formula (a2) compound represented.
The substitution novolac resin can be if usual way is (for example, Japanese Patent Laid 2003-533502 public affairs Report) described in like that, obtained by so that the novolac resin is reacted with the halide in the presence of basic catalyst.
As the halide, such as can enumerate：Chloromethanes, chloroethanes, bromoethane, chlorocyclopentane, bromocyclopentane, Chlorobenzene, bromobenzene, propargyl chloride and propargyl bromide.
As the basic catalyst, such as can enumerate：Amine, metal hydroxides, metal carbonate and metal alcohol Salt.
<Other light absorbers>
Temporary fixing composition thus separating layer (I) can also contain other light absorbers other than polymer (A). Other absorbents are for example with (a) below, the function of either or both (b)：(a) at the light irradiation of absorption step (3) Light used in reason generates the decomposed metamorphic etc. of constituent in separating layer (I)；(b) it absorbs to each in laminated body The measurement light of the alignment of detection or each element when element carries out configuration stacking, for separating layer (I) (is usually 600nm The light of the wavelength of~900nm).
As other light absorbers, such as can enumerate：Enumerate BTA system light absorber, hydroxyphenyltriazinuv system light absorption Agent, benzophenone series light absorber, salicylic acid system light absorber, radioactivity-sensitive radical polymerization initiator and photoinduction The organic systems light absorber such as acid producing agent；The reaction product of phenolic compounds and aldehyde compound；C.I. pigment black (C.I.pigment Black) the 7, black pigments such as C.I. pigment blacks 31, C.I. pigment blacks 32 and C.I. pigment blacks 35, C.I. pigment blues (C.I.pigment blue)15：3, C.I. pigment blue 15s：4, C.I. pigment blue 15s：6, C.I. naphthol greens (C.I.pigment Green) 7, C.I. pigment green 36s, C.I. naphthol greens 58, C.I. pigment yellows (C.I.pigment yellow) 139, C.I. pigment The non-black pigments such as red (C.I.pigment red) 242, C.I. paratoneres 245 and C.I. paratoneres 254, C.I. vat blues (C.I.vat blue) 4, C.I. acid blues (C.I.acid blue) 40, C.I. direct greens (C.I.directgreen) 28, C.I. direct green 59, C.I. Indian yellows (C.I.acid yellow) 11, C.I. directly Huang (C.I.direct yellow) 12, C.I. active yellow (C.I.reactive yellow) 2, C.I. acid reds (C.I.acid red) 37, C.I. acid red 18s 0, C.I. the dyestuffs such as acid blue 29, C.I. directly red (C.I.direct red) 28 and C.I. directly red 83.
Other light absorbers can be used alone one kind, also can and with two or more.
As long as polymer (A) absorbs the light used in photo-irradiation treatment and decomposes or rotten in separating layer (I), then its The content of its light absorber is not particularly limited, and relative to 100 mass parts of polymer (A), preferably 20 is below mass part.
In addition, in one embodiment, relative to 100 mass parts of polymer (A), the content of other light absorbers is usually The mass parts of 20 mass parts~400, the mass parts of preferably 50 mass parts~300.For example, by using the suction in such range The other light absorbers for receiving measurement light, can carry out the alignment of each element in laminated body well.
<Other ingredients>
Temporary fixing composition optionally can also contain selected from the adhesions such as Petropols and terpenic series resin assign resin, Antioxidant, polymerization inhibitor, contiguity auxiliary agent, surfactant, polystyrene crosslinked particle, crosslinking agent and aluminium oxide, oxygen Change one or more of metal oxide particles such as zirconium, titanium oxide and silica.
[adhesion agent layer (II)]
Adhesion agent layer (II) can be used temporarily to fix the well known solid of object and be formed.According to support Body, separating layer (I), the sequence of adhesion agent layer (II) and object and in the case of laminated body with each layer, solid Object is temporarily fixed on supporter and is covered the surface of object and is protected by layer (II).
As solid, such as thermoplastic resin system, elastic system or thermosetting resin system can be enumerated then Agent, or the two or more mixed stockers in these.Solid can be any of solvent type, latex type or heat molten type Kind.
<Thermoplastic resin>
As thermoplastic resin, such as can enumerate：Cyclic olefine polymer, terpenic series resin, Petropols, novolaks Resin, (methyl) acrylic resin, polyolefin, polyvinyl chloride, vinyl-vinyl acetate copolymer, phenoxy resin, thermoplasticity Polyimide resin and thermoplasticity polybenzoxazole resin.In these, preferably cyclic olefine polymer.
As cyclic olefine polymer, such as can enumerate：Cyclic olefin based compound and non-cyclic olefin based compound Addition copolymer, one or more kinds of cyclic olefin based compounds Romp polymer, keep the ring-opening metathesis poly- Close polymer obtained by object hydrogenation.
As cyclic olefin based compound, such as can enumerate：Orbornene-based alkene, tetracyclododecen system alkene, two rings Pentadiene system alkene and these derivative.As the derivative, such as can enumerate with selected from alkyl, alkylidene, aralkyl In base, naphthenic base, hydroxyl, alkoxy, acetyl group, cyano, amide groups, imide, silylation, aromatic rings, ehter bond and ester bond One or more kinds of substitutive derivatives.
As non-cyclic olefin based compound, such as straight-chain or the branch of carbon number 2~20, preferably 2~10 can be enumerated The alkene of chain, more preferably ethylene, propylene, butylene, particularly preferably ethylene.
The weight average molecular weight (Mw) that the polystyrene using GPC method of cyclic olefine polymer converts is usually 10, 000~100,000, preferably 30,000~100,000.
As terpenic series resin, such as can enumerate：Terpene resin, hydrogenated terpene resin, terpene phenol resin, hydriding terpene Phenolic resin, aromatic modified terpene resin, aromatic modified hydrogenated terpene resin.Terpenic series resin is measured using GPC method The weight average molecular weight (Mw) of polystyrene conversion be usually 50,000 hereinafter, preferably 500~10,000.
As Petropols, such as can enumerate：C5 through-stones oleoresin, C9 through-stones oleoresin, C5 systems/C9 systems mix oil tree Fat, cyclopentadiene system resin, the polymer of vinyl aromatic compound, alkene and vinyl aromatic compound Copolymer, cyclopentadiene based compound and vinyl aromatic compound copolymer, these hydride and be selected from Two or more mixtures in these.The weight averaged molecular for the polystyrene conversion of Petropols measured using GPC method Amount (Mw) is usually 20,000 hereinafter, preferably 100~20, and 000.
Novolac resin in the presence of the acidic catalyst oxalic acid such as can be by making phenolic compounds and aldehyde compound Addition condensation and obtain.As the preferably concrete example of novolac resin, can enumerate：Phenol/formaldehyde condensation novolac resin, Cresol/formaldehyde is condensed novolac resin, phenol-naphthols/formaldehyde condensation novolac resin.The utilization of novolac resin The weight average molecular weight (Mw) for the polystyrene conversion that GPC method measures is usually 2,000 or more, preferably 2, and 000~20, 000。
Thermoplastic resin can be used alone one kind, also can and with two or more.
For the viewpoint of heat resistance, adhesion agent layer (II) preferably contains cyclic olefine polymer.In addition, adhesion agent layer (II) preferably containing selected from least one of cyclic olefine polymer, terpenic series resin and Petropols ingredient.Such layer To used in photosensitive etching and processing the high organic solvent of chemical liquids, such as polarity or water-based chemical liquids have it is high resistance to Property.Therefore, it when being processed object and/or moving, can prevent from that adhesion agent layer (II) is caused to deteriorate because of chemical liquids, it is right As object self-supporter deviates mobile unfavorable condition.
<Elastomer>
As elastomer, such as can enumerate：Acrylic rubber, nitrile rubber, urethane rubber, styrene butadiene rubber Glue.These one kind that can be used alone, also can and with two or more.
<Thermosetting resin>
As thermosetting resin, such as can enumerate：Epoxy resin, bakelite, carbamide resin, melamine tree Fat, diallyl phthalate resin, carbamate resins, silicone resin, contains (methyl) third at unsaturated polyester resin Resin, thermosetting polyimide resin, the thermosetting polybenzoxazole resin of enoyl-.These one kind that can be used alone, Also can and with two or more.
<Other ingredients>
Solid optionally can also contain selected from antioxidant, polymerization inhibitor, contiguity auxiliary agent, surfactant, polyphenyl One or both of metal oxide particles such as ethylene crosslinked particle and aluminium oxide, zirconium oxide, titanium oxide and silica with On.
<The manufacture of temporary fixing composition and solid>
Temporary fixing composition and solid optionally can be by using known in using in the processing of resin combination Device, such as biaxial extruder, single axle extruding machine, continuous kneader, roller kneading machine, pressure kneader, mixer (Banbury mixer) mixes each ingredient to manufacture.In addition, in order to remove impurity, suitable can also be filtered.
In the manufacture of temporary fixing composition and solid, in order to which these viscosity to be set as to the model suitable for coating It encloses, it is possible to use solvent.As solvent, such as can enumerate：The sulfoxide solvents such as dimethyl sulfoxide (DMSO), diethyl sulfoxide；3- methoxyl groups- N, N- dimethylpropionamide, 3- butoxy-N, N- dimethylpropionamide, 3- hexyloxies-N, N- dimethylpropionamide, N, N- diformazans Base formamide, N, N- diethylformamides, n,N-dimethylacetamide, N, the amide solvents such as N- diethyl acetamides；Hexamethyl The phosphinylidynes amine solvent such as phosphamide；N-methyl-2-pyrrolidone, n-vinyl-2-pyrrolidone, N- amyls -2-Pyrrolidone, N- The pyrrolidones such as (methoxy-propyl) -2-Pyrrolidone, N- (tertiary butyl) -2-Pyrrolidone, n-cyclohexyl-2-pyrrolidone are molten Agent；The ketone solvents such as 2-HEPTANONE, 3- heptanone, 4- heptanone, methyl iso-butyl ketone (MIBK), cyclopentanone, cyclohexanone；Methyl phenyl ethers anisole, propylene glycol list first Alcohol/the ether solvents such as ether, dipropylene glycol methyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether (diglyme)；Ethyl acetate, acetic acid Butyl ester, isobutyl acetate, ethyl lactate, 3- ethoxyl ethyl propionates, propylene glycol methyl ether acetate, diethylene glycol monoethyl ether second The esters such as acid esters, Methoxypropylacetate, ethylene carbonate, propylene carbonate, gamma-butyrolacton/interior ester solvent；Dimethylbenzene, lemon Lemon alkene, mesitylene, cinene, firpene (pinene), dicyclohexyl, cyclododecene, 1- Tert-butyl-3,5-dimethyl Benzenes, fourth The hydrocarbon solvents such as butylcyclohexane, cyclooctane, cycloheptane, hexamethylene, hexahydrotoluene.
Solvent can be used alone one kind, also can and with two or more.
Contain solvent by temporary fixing composition and solid, and be easily adjusted these viscosity, therefore being easy will Temporarily fixed material is formed on object or supporter.For example, solvent can temporarily fixing composition and solid solid It is usually 5 mass of mass %~70 % that constituent concentration, which separately becomes, is more preferably the model of 15 mass of mass %~50 % Enclose use.Herein, so-called " solid component concentration " refers to total concentration of all the components other than solvent.
2. the processing method of object
The processing method of object of the present invention includes：(1) the step of forming the laminated body；(2) to the object It is processed, and/or makes the step of the laminated body movement；(3) from the support side to the separating layer (I) irradiation light Step；And (4) the step of detaching the supporter with the object.
Hereinafter, each step is also referred to as step (1)~step (4).
<2-1. steps (1)>
In step (1), such as (1-1) forms the temporary fixed material on the surface of supporter and/or object, and passes through So that object is bonded with supporter by the temporary fixed material, thus object can be temporarily fixed on supporter.In addition, (1-2) forms the temporary fixed material on the surface of supporter, and resin coating film, wiring are formed on the temporary fixed material Object, thus can be temporarily fixed on supporter by the objects such as layer.Object optionally also can surface treated.
As the forming method of the temporary fixed material, such as can enumerate：It is straight that (α) will temporarily fix each layer possessed by material Connect the method being formed on supporter and/or on object；(β) is in the polyethylene terephthalate film for implementing demoulding processing After forming a film with certain film thickness using temporary fixing composition or solid on equal films, each layer is transferred to branch using laminar manner Method on support body and/or object.For the aspect of film thickness uniformity, preferably described (α) method.
The temporary fixing composition of each layer and the coating method of solid possessed by material, example are temporarily fixed as being formed Spin-coating method, ink-jet method can such as be enumerated.In spin-coating method, such as it is 300rpm~3,500rpm, preferably that can enumerate in rotary speed For the item that 500rpm~1,500rpm, acceleration are 500rpm/ seconds~15,000rpm/ seconds, rotational time is 30 seconds~300 seconds The method of composition described in spin coating under part.
It after being coated with temporary fixing composition and forming film, such as is heated, makes evaporation of the solvent, be consequently formed point Absciss layer (I).The condition of heating can be according to the boiling point of solvent and suitable for decision, such as heating temperature is usually 100 DEG C~350 DEG C, Heating time is usually 1 minute~60 minutes.
It in coating solid and after forming film, such as is heated, makes evaporation of the solvent, adhesion agent layer is consequently formed (II).As described above, temporarily fixed material can not have adhesion agent layer (II) yet.The condition of heating can be fitted according to the boiling point of solvent It preferably determines, such as heating temperature is usually 100 DEG C~300 DEG C, heating time is usually 1 minute~60 minutes.
The heating of the film can optionally be carried out with the multistage.
In (α) method, as the method for making object be bonded with supporter, according to supporter, separating layer (I), adhesion agent layer (II) and the sequence of object and with each element laminated body in the case of, can enumerate with lower section Method.Such as it can enumerate：Method 1, forming layer (II) and forming layer (I) in intermediate layer, make these with layer on object object plane (I) and the mode of layer (II) contact is bonded；Method 2 sequentially forms layer (II) and layer (I) and on layer (I) on object object plane It is bonded supporter；Method 3 sequentially forms layer (I) and layer (II) and the laminating object object on layer (II) in intermediate layer.At this time Temperature can be according to temporary fixing composition and solid containing ingredient, coating method etc. and suitable for selection.In these, just For avoiding the formation middle level (I) of each layer and the viewpoint of layer (II) mixing, preferably the method 1.
Crimp condition about object and supporter, as long as such as by be preferably room temperature or more and 400 DEG C or less, More preferably 150 DEG C~400 DEG C of temperature with 1 minute~20 minutes on the stacking direction of each layer apply 0.01MPa~ The pressure of 100MPa carries out.After crimping, and then temperature that can also be 150 DEG C~300 DEG C add within 10 minutes~3 hours Heat treatment.In this way, object is firmly held on supporter via temporary fixed material.
In separating layer (I), the content of polymer (A) is usually 15 mass % or more, preferably 20 matter of mass %~100 Measure %, and then preferably 25 mass of mass %~100 %.In one embodiment, in separating layer (I), the content of polymer (A) For example, 40 mass % or more, 50 mass of mass %~100 % or 60 mass of mass %~100 %.If the content of polymer (A) In the range, then for the aspect of the adherence of separating layer (I), separation property, light-proofness and heat resistance preferably.
The object to be processed as processing (movement) object can for example be enumerated：Semiconductor wafer, semiconductor chip, glass Glass substrate, resin substrate, metal substrate, metal foil, grinding pad, resin coating film, wiring layer.Also it can be led in semiconductor wafer and partly It is formed selected from convex block, wiring, through-hole (throughhole), through-hole access (through hole via), insulating film on body chip And at least one of various elements.Also it can form or carry on the substrate various elements.As resin coating film, such as can Enumerate the layer for containing organic principle as principal component；It can specifically enumerate：The photo-sensitive resin that is formed by photosensitive material, The insulative resin layer being made of insulating material, the photosensitive insulating resin layer formed by photosensitive insulating resin material.
As supporter, keep separating layer (I) rotten to carry out light irradiation using step (3) self-supporting side, preferably For the transparent substrate of light used in being hit for illumination, such as glass substrate, quartz base plate and transparent resin base can be enumerated Plate.
Hereinafter, being illustrated to the object to be processed at least with wiring layer.In the process, it is formed on supporter Temporarily fixed material, and using the object to be processed at least with wiring layer as example independently of the layer of semiconductor wafer or chip and It is initially formed on temporary fixed material, then, in subsequent steps (2), multiple semiconductor elements will be formed in wafer substrate The semiconductor wafer or semiconductor chip of part are configured on the wiring layer.The wiring layer by with semiconductor wafer or chip Be electrically connected and the wiring layer again as semiconductor wafer or chip functions.It is also possible to apply the invention to such fan-out-type crystalline substances The first redistribution layer (RDL in chip size package (Fan-Out Wafer Level Package, FP-WLP) technology (Redistribution Layer)-First) in structure.
Wiring layer for example with insulation division, wiring part, may connect to semiconductor wafer or chip electrode connection with leading Body portion.Semiconductor wafer or chip are configured on wiring layer, and led using solder, anisotropic conductive paste, anisotropy The electrode of the connection conductor portion of wiring layer and semiconductor wafer or chip is electrically connected by the adhesives such as electrical film.Partly leading In the case of generating gap between body chip or chip and wiring layer, underfill agent material also can be filled.
Internal structure in wiring layer is not particularly limited.As wiring part and the material of connection conductor portion, such as can It enumerates：The metals such as copper, gold, silver, platinum, lead, tin, nickel, cobalt, indium, rhodium, chromium, tungsten, ruthenium, and include these two or more conjunctions Gold.As the material of insulation division, such as can enumerate：Polyimide resin, acrylic resin, poly- ether nitrile resin, polyethersulfone resin, It is synthesized well known to epoxy resin, polyethylene terephthalate resin, polyethylene naphthalate resin, Corvic etc. Resin.The thickness of wiring layer is usually 1 μm~1,000 μm.
Then resin seal, such as in step (2) is carried out to semiconductor wafer or chip, it will be temporary in step (4) Fixed material and wiring layer separation, thus can get the semiconductor with semiconductor wafer or chip and wiring layer (i.e. wiring layer again) Device.
It, also can be to right in order to keep the extension in the temporarily face of fixed material uniform when forming temporarily fixed material on object As object plane (such as circuit face) implements surface treatment in advance.As the method for surface treatment, such as can enumerate on object object plane The method for being pre-coated with surface conditioning agent.As the surface conditioning agent, such as the coupling agents such as silane coupling agent can be enumerated.
Furthermore on the temporarily configuration of object on fixed material or the wiring layer in the wiring layer formation process The configuration of semiconductor wafer or chip also can based on the location information for using each element obtained by measurement light align it is laggard Row.
For the rotten viewpoint that may refrain from object to be processed, measurement light is preferably the light of wavelength 600nm~900nm, meter It surveys light and is particularly preferably the light comprising wavelength 633nm, wavelength 670nm or wavelength 830nm.As the light source of measurement light, such as can Semiconductor visual laser, light emitting diode is preferably used.
Contraposition can for example carry out as described below.Using the layer for the other light absorbers for containing absorption measurement light as separation Layer (I).Herein, irradiation measurement light observes the strength reduction of the measurement light, root when separating layer (I) absorbs the measurement light The location information of separating layer (I) is obtained according to the strength reduction.Measure the optical sensor used in the irradiation observation of light Installation position is not particularly limited.Temporarily contraposition or the wiring of fixed material and object is carried out according to the location information of gained The contraposition of layer and semiconductor wafer or chip.
As the light source of illumination region, such as semiconductor visual laser, light emitting diode can be enumerated, as acceptance part, such as It can enumerate：The optical sensors such as optical diode or optotransistor；Charge coupling device (Charge Coupled Device, CCD) figure As sensor or complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) The imaging sensors such as imaging sensor.As the mechanism for making each integral part move, such as mechanical arm can be enumerated.
<2-2. steps (2)>
Step (2) is that the laminated body movement of gained is processed, and/or made to the object being temporarily fixed on supporter The step of.Moving step is the step for making the objects such as semiconductor wafer be moved together with supporter from certain device to other devices Suddenly.As the working process for the object being temporarily fixed on supporter, such as can enumerate：The objects such as cutting, grinding back surface Filming, photosensitive etching and processing, being laminated of semiconductor chip, the carrying of various elements, resin seal.Photosensitive etching and processing example Such as comprising one in formation, etching and processing, the formation of sputter coating, plating processing and plating reflow processing selected from resist pattern Kind or more processing.The formation of etching and processing and sputter coating is, for example, to be carried out within the temperature range of 25 DEG C~300 DEG C or so, is plated It is, for example, to be carried out within the temperature range of 225 DEG C~300 DEG C or so to apply processing and plating reflow processing.The working process of object As long as being carried out at a temperature of the retentivity of temporary fixed material will not disappear, then it is not particularly limited.
For example, in the RDL-First, the object to be processed at least with wiring layer is formed in using step (1) Temporarily on fixed material, described match will be configured at selected from least one of semiconductor wafer and semiconductor chip using step (2) On line layer, then, wiring layer and semiconductor wafer or chip are electrically connected.Then, semiconductor wafer or core are optionally carried out The resin seal of piece.
<2-3. steps (3)>
After the working process of object or the movement of laminated body, to temporarily fixing separating layer (I) possessed by material from branch Support body side irradiation light.It is irradiated by light, the polymer (A) containing ingredient as separating layer (I) absorbs light, separating layer (I) Intensity and adhesion reduce.Therefore, as long as after being irradiated for the light of separating layer (I), then temporarily fixed material is not needed especially Heat treatment supporter and object can be easily separated.
Light irradiation preferably uses ultraviolet light, such as the ultraviolet light of wavelength 10nm~400nm, particularly preferably wave can be used The ultraviolet light of long 300nm~400nm.As the light source of irradiation light, such as can enumerate：Cooper-Hewitt lamp, high-pressure mercury-vapor lamp, superelevation Medium pressure mercury lamp, laser.
In these, preferably laser.Preferably self-supporting side one side scanning laser one in face of separating layer (I) whole face into Row irradiation, more preferably makes focus concentrate on separating layer (I) and irradiate laser.Scan method is not particularly limited, such as can be arranged It lifts：In the X/Y plane of separating layer (I), laser is irradiated with threadiness in the X-axis direction, so that irradiation portion is moved successively in the Y-axis direction The method moved and whole face is irradiated；Or laser is irradiated with angle week shape, so that irradiation portion is moved successively from central part to peripheral part To outside or irradiation portion is set to be moved to from peripheral part to central part inside successively and the method that is irradiated to whole face.
Laser can for example enumerate Solid State Laser (example：Use total solids laser, the yttrium-aluminium-garnet of photo-excited semiconductor laser (Yttrium Aluminum Garnet, YAG) laser), liquid laser (example：Pigment laser), gas laser (example：Quasi-molecule swashs Light).In these, it is preferable to use the total solids laser (wavelength of photo-excited semiconductor laser：355nm), YAG laser (wavelength： 355nm) and excimer laser.
As excimer laser, such as can enumerate：F2Excimer laser (wavelength：157nm), ArF excimer laser (wave It is long：193nm), KrF excimer laser (wavelength：248nm), XeCl excimer laser (wavelength：308nm), XeF excimer laser (wavelength：351nm).
Light irradiation condition it is different regarding the type of light source etc., use photo-excited semiconductor laser total solids laser and In the case of YAG laser, usually 1mW~100W, accumulative light quantity are usually 1.4 × 10-7mJ/cm2~1.4 × 107mJ/cm2。
<2-4. steps (4)>
In step (4), to object or supporter applied force, described object etc. thus is removed from the supporter, The two is set to detach.Furthermore the separation of step (4) preferably is carried out after the irradiation of the light of end step (3), but can also be carried out on one side The light of step (3) irradiates, and carries out the separation of step (4) on one side.
As separation method, such as can enumerate：To object or supporter on the direction parallel relative to object object plane Applied force and both make the method detached；It is one of object or supporter is fixed and parallel certainly relative to object object plane Direction starts another one at a certain angle, the method for thus detaching the two.
In the former method, method can be listed below：Make object in the horizontal direction on the surface relative to supporter While sliding, supporter is applied and fixed support body or is applied to the power that the power of the object contends with, it thus will branch Support body is detached with object.
In the method for the latter, the applied force preferably on relative to object object plane generally perpendicular direction and by supporter with Object detaches.So-called " relative to object object plane generally perpendicular direction applied force " refers to relative to perpendicular to object object plane Axis, that is, z-axis, usually 0 °~60 ° of ranges, preferably 0 °~45 ° range, more preferably 0 °~30 ° range, into And preferably 0 °~5 ° of range, the particularly preferably 0 ° applied force i.e. on the direction of object object plane.As separate mode, Such as the periphery of object or supporter can be started and the applied force on relative to object object plane generally perpendicular direction, and And method (hook drawing mode) from the periphery to center that removed successively from carries out.
The separation can be usually 5 DEG C~100 DEG C, preferably 10 DEG C~45 DEG C and then preferably 15 DEG C~30 DEG C Temperature carries out.Temperature herein refers to the temperature of supporter.In addition, when being detached, the breakage of object in order to prevent, The attached enhancing band of can be in object and the side opposite with the temporary fixed face of supporter face paste, for example commercially available cutting Band.
In the present invention, as described above, temporarily fixed material has separating layer (I), and object is mainly generated in separating layer (I) The separation of object and supporter.In the case where object has convex block, the breakage of convex block can be prevented in separating step.
Furthermore after detaching supporter with object, has and temporarily fix the situation that material remains on object.Separation step The temporary fixed material remained in after rapid on object can be removed by lift-off processing, in addition, also being cleaned using solvent And it removes.
Preferably adhesive tape, the adhesive tape that can be used can be formed between temporary fixed material for the temporarily stripping of fixed material Higher than the adhesion of object and the temporarily adhesion of fixed material.By adhesive tape be laminated on temporarily fixed material and by adhesive tape with Temporarily fixed material is removed together, thus can remove temporarily fixed material.
As cleaning method, such as can enumerate method object being impregnated in solvent, solvent of spraying to object Method, the method for applying ultrasonic wave when object to be impregnated in solvent.The temperature of solvent is not particularly limited, preferably It is 20 DEG C~80 DEG C, more preferably 20 DEG C~50 DEG C.As workable solvent in cleaning, temporary fixing composition can be illustrated And the solvent illustrated in one column of manufacture of solid.
As described above, supporter can be detached with object.For the object after separation, also can further be added Work processing.For example, in the RDL-First, can also carry out the formation of the convex block on wiring layer, using cutting to each envelope Dress is cut out.
3. semiconductor device and its manufacturing method
The semiconductor device of the present invention can be processed object by using the processing method of the object of the present invention And it manufactures.Semiconductor device (example obtained by being processed to object in self-supporter separation：Semiconductor element) after, it is described temporary When fix material and can be readily removable by lift-off processing or solvent are handled.Therefore, in semiconductor device of the invention, because of separation When light irradiation caused by deterioration it is small, in addition, because temporarily fix material caused by the pollutions such as stain and focal spot reduce.
Embodiment
Hereinafter, based on embodiment and then the present invention is specifically described, but the present invention is not limited to these embodiments. In the record of embodiment below etc., as long as not specifically mentioned, then " part " is used with the meaning of " mass parts ".
The average molecular weight (Mw, Mn) of polymer and resin is the GPC tubing strings (2 manufactured using Tosoh (Tosoh) (stock) G2000HXL, 1 G3000HXL, 1 G4000HXL) and in terms of polystyrene conversion and use measurement device " HLC-8220- GPC " (Tosoh (Tosoh) (stock) manufacture) is measured.
1. the manufacture of temporary fixing composition and solid
The synthesis of [synthesis example 1] polymer (A1)
In the reaction unit for having condenser (condenser), thermometer and agitating device, 2,6- dihydroxy naphthlenes are put into 100 parts, 100 parts of propylene glycol methyl ether acetate and paraformaldehyde 50 parts (being converted with formaldehyde) are added 2 parts of oxalic acid, carried out on one side Dehydration one side heats 5 hours at 120 DEG C.
Water is added in reaction solution and is stirred.It after recycling sediment, is cleaned using water, and is done at 50 DEG C Dry 17 hours, obtain 2,6- dihydroxy naphthlenes/formaldehyde condensation products (polymer (A1)).The Mw of polymer (A1) is 1,550.
The synthesis of [synthesis example 2] polymer (A2)
In the detachable flask for having thermometer, 10 parts of the polymer (A1), 13 parts of propargyl bromide, triethylamine are put into 10 parts, 40 parts of tetrahydrofuran react 12 hours when stirring at 50 DEG C.After reaction, it will be reacted using water-bath cooling Solution is cooled to 30 DEG C or less.After cooling, the reaction solution is put into a large amount of normal heptane.Thereafter, decantation is utilized (decantation) solid of precipitation is detached and is cleaned using a large amount of normal heptane by method.Then, first is dissolved the solids into It in base isobutyl ketone, is cleaned with the oxalic acid and pure water of 1 mass %, removes the triethylamine of remaining.Thereafter, to having at 50 DEG C Machine layer is dried 17 hours, and polymer (A2) is obtained.The Mw of polymer (A2) is 5,300, and the Drug delivery rate of propargyl is basis13C NMR is measured, if the hydroxyl of polymer (A1) is as a result set as 100 moles of %, for 95 moles of %.
[embodiment 1A~embodiment 9A, comparative example 1A~comparative example 4A]
The manufacture of temporary fixing composition (I-1)~temporary fixing composition (I-13)
With ingredient shown in blending amount mixture table 1 shown in table 1, temporary fixing composition (I-1)~temporarily solid is manufactured Surely composition (I-13) is used.The details of each ingredient in table 1 is as described later.
[table 1]
Table 1
The numerical value of each ingredient indicates blending amount (mass parts).
Polymer
A1：The polymer (A1)
A2：The polymer (A2)
A3：Include the cresol novolac resin (Mw=6,500) of metacresol/paracresol=60/40 (molar ratio)
A4：Polyamic acid (trade name " You Piya (UPIA)-AT ", emerging production (stock) manufacture in space portion)
A5：Cyclic olefine polymer (trade name " Ya Dun (ARTON) RX4500 ", JSR (stock) manufactures)
Light absorber
B1：4,4 '-bis- (diethylamino) benzophenone
B2：2- [2- hydroxyls -3- (4,5,6,7- tetrahydrochysene -1,3- dioxo -1H- iso-indoles -2- ylmethyls) -5- methylbenzenes Base] -2H- benzotriazole
B3：Solvent blue (Solvent Blue) 70
B4：(pigment concentration is 55 mass % and contains pigment (pigment) number B15 blue dispersible pigment dispersion：6 methoxy Base propyl-acetic acid ester dispersion liquid)
B5：(pigment concentration is 55 mass % and the methoxyl group containing pigment (pigment) number G58 to green pigment dispersion liquid Propyl-acetic acid ester dispersion liquid)
Solvent
C1：Cyclohexanone
C2：Methoxypropylacetate
C3：N-methyl-2-pyrrolidone
C4：Mesitylene
It is other
D1：Fluorine system surfactant (" Fu Jiete (Ftergent) FTX-218 ", Ni Ousi (NEOS) (stock) are manufactured)
D2：Crosslinking agent (4- (1- { 4- [1,1- bis- (4- hydroxy phenyls) ethyls] phenyl } -1- Methylethyls) phenol and formaldehyde Reaction product)
The manufacture of [Production Example 1] solid (II-1)
By 80 parts of cyclic olefine polymer (trade name " Ya Dun (ARTON) RX4500 ", JSR (stock) manufacture), 20 parts Hydrogenated terpene resin (former chemical (Yasuhara Chemical) (stock) system of trade name " Ku Lailong (CLEARON) P150 ", peace Make), 20 parts of liquid styrene butadiene ribber (trade name " L-SBR-820 ", Kuraray (Kurary) (stock) manufacture), 3 parts Hindered phenolic antioxidant (trade name " easy fine jade Northey (IRGANOX) 1010 ", BASF (BASF) company manufacture) and 367 parts of mesitylene mixing, thus manufactures solid (II-1).
2. the measurement of transmitance
The temporary fixing composition of spin coating (I-1) in embodiment 1A, uses heat thereafter on 6 inches of chip glass It after plate heats 1 minute at 180 DEG C, and then is heated 2 minutes at 300 DEG C, obtains the uniform layer (I-1) that thickness is 0.5 μm. The rotation of temporary fixing composition (I-2)~temporary fixing composition (I-13) is also carried out in other embodiments and comparative example Heating under the heating condition in painting and 2 stages (step) obtains uniform layer (I-2)~layer (I-13) that thickness is 0.5 μm.It will The heating condition in 2 stages is shown in Table 2.For layer (I-1)~layer (I-13) of gained, light is divided using UV, visible light near-infrared Degree meter (Japan's light splitting (JASCO), V-7000) measures the transmitance (initial transmission) under wavelength 355nm and wavelength 670nm.
Under nitrogen flowing, with 300 DEG C using baking oven to have the chip glass of layer (I-1)~layer (I-13) heat 10 points Clock.For the layer (I-1) after heating~layer (I-13), using UV, visible light near infrared spectrometer, (Japan is divided (JASCO), V-7000) measure wavelength 355nm and wavelength 670nm under transmitance (transmitance after heating).It the results are shown in In table 2.
[table 2]
Table 2
3. the manufacture and its evaluation of laminated body
[embodiment 1B~embodiment 9B]
The temporary fixing composition of spin coating (I-1)~temporary fixing composition on 4 inches of chip glasses (substrate 1) (I-9), it thereafter, is heated under the membrance casting condition described in table 3 using hot plate, it is 10 μm uniform that obtaining, which has thickness, The substrate 1 of separating layer (I-1)~separating layer (I-9).In addition, the spin coating solid (II- on 4 inches of silicon wafer (substrate 2) 1) it, thereafter, is heated after five minutes at 160 DEG C using hot plate, and then is heated 10 minutes at 230 DEG C, it is 3 μ that making, which has thickness, The substrate 2 of the uniform adhesion agent layer (II-1) of m.
After the substrate 1 and the substrate 2 are cut to vertical 1cm, horizontal 1cm respectively, with separating layer (I) and adhesion agent layer (II) mode contacted is bonded, and using viscous brilliant device, applies the pressure of 5 minutes 15MPa at 350 DEG C, obtain substrate 1 with The laminated body that substrate 2 is laminated via temporary fixed material.
Using total solids height output laser aid (trade name " Ji Nixisi (Genesis) CX 355STM Compact ", Day undergraduate course Hei Lunte (Coherent Japan) (stock) is manufactured) to export 100mW, 2.08 × 10-4mJ/cm of accumulative light quantity2From base Ultraviolet (Ultra Violet, UV) laser (wavelength 355nm) is irradiated in 1 side of plate to the experiment laminated body of gained.After being irradiated to light Experiment with laminated body use omnipotent adhesion strength test machine (trade name " Da Ge (Dage) 4000 ", Da Ge (Dage) corporation Make) in such a way that hook is drawn at axis (z-axis) direction applied force vertical relative to 1 face of substrate the speed of 500 μm/second (, 23 DEG C), in layer (I) interface with layer (II) is removed.Peel strength when by the stripping is 40N/m2Following situation is evaluated as can be good Good remove.It will be evaluation result is shown in table in 3.
[table 3]
Table 3
Separating layer (I) The formation condition of layer (I) Adhesion agent layer (II) Fissility
Embodiment 1B Temporary fixing composition (I-1) It is identical as the embodiment 1A of table 2 Solid (II-1) Well
Embodiment 2B Temporary fixing composition (I-2) It is identical as the embodiment 2A of table 2 Solid (II-1) Well
Embodiment 3B Temporary fixing composition (I-3) It is identical as the embodiment 3A of table 2 Solid (II-1) Well
Embodiment 4B Temporary fixing composition (I-4) It is identical as the embodiment 4A of table 2 Solid (II-1) Well
Embodiment 5B Temporary fixing composition (I-5) It is identical as the embodiment 5A of table 2 Solid (II-1) Well
Embodiment 6B Temporary fixing composition (I-6) It is identical as the embodiment 6A of table 2 Solid (II-1) Well
Embodiment 7B Temporary fixing composition (I-7) It is identical as the embodiment 7A of table 2 Solid (II-1) Well
Embodiment 8B Temporary fixing composition (I-8) It is identical as the embodiment 8A of table 2 Solid (II-1) Well
Embodiment 9B Temporary fixing composition (I-9) It is identical as the embodiment 9A of table 2 Solid (II-1) Well
The explanation of symbol
1：Laminated body
10：Supporter
20：Temporarily fixed material
21：Adhesion agent layer (II)
22：Separating layer (I)
30：Object

Claims (16)

1. a kind of processing method of object, including：
(1) the step of forming laminated body, the laminated body have supporter, temporarily fixed material and object to be processed, herein, institute It includes layer (I) to state temporarily fixed material, and the object is held on the temporary fixed material, and the layer (I) is containing under having State the polymer (A) of structural unit shown in formula (A1)；
(2) step of the laminated body movement is processed, and/or made to the object；
(3) the step of from the support side to the layer (I) irradiation light；And
(4) the step of supporter being detached with the object,
[changing 1]
[in formula (A1),
Ar is fused-ring aromatic ring；
-OR1For the base being bonded on the fused-ring aromatic ring, R1For hydrogen atom or the alkyl of carbon number 1~20 ,-OR1 It, can be mutually the same also different in the case of multiple；
R2It is the alkyl of halogen atom or carbon number 1~20, R for the base being bonded on the fused-ring aromatic ring2Exist It, can be mutually the same also different in the case of multiple；
R3For hydrogen atom or organic group, R3It can be mutually the same also different；
The integer that a is 1 or more, the integer that b is 0 or more].
2. the processing method of object according to claim 1, wherein the temporary fixed material includes adhesion agent layer in turn (II)。
3. the processing method of object according to claim 2, wherein the laminated body is according to the supporter, the layer (I), the sequence of the adhesion agent layer (II) and the object to be processed and have each element.
4. the processing method of object according to any one of claim 1 to 3, wherein in the step (1), temporary When fix material on formed at least with wiring layer object to be processed.
5. the processing method of object according to claim 4, wherein the processing in the step (2) includes that will be selected from half At least one of conductor chip and semiconductor chip are configured on the wiring layer.
6. the processing method of object according to any one of claim 1 to 5, wherein the light in the step (3) is Ultraviolet light.
7. the processing method of object according to claim 6, wherein the ultraviolet light is wavelength 300nm~400nm's Ultraviolet light.
8. the processing method of object according to any one of claim 1 to 7, wherein the thickness of the layer (I) is 0.1 μm~500 μm.
9. the processing method of object according to any one of claim 1 to 8, wherein the contracting in the formula (A1) Conjunction Ppolynuclear aromatic ring is naphthalene nucleus.
10. the processing method of object according to any one of claim 1 to 9, wherein the R in the formula (A1)1For hydrogen Atom or alkynyl.
11. a kind of temporary fixing composition contains the polymer (A) with structural unit shown in following formula (A2),
[changing 2]
[in formula (A2),
Ar is fused-ring aromatic ring；
-OR1For the base being bonded on the fused-ring aromatic ring, R1For hydrogen atom or the alkyl of carbon number 1~20 ,-OR1 It, can be mutually the same also different in the case of multiple；
R2It is the alkyl of halogen atom or carbon number 1~20, R for the base being bonded on the fused-ring aromatic ring2Exist It, can be mutually the same also different in the case of multiple；
R3For hydrogen atom or organic group, R3It can be mutually the same also different；
The integer that a1 is 2 or more, the integer that b is 0 or more].
12. temporary fixing composition according to claim 11, and then contain solvent.
13. temporary fixing composition according to claim 11 or 12, wherein the temporary fixing composition is consolidated The content ratio of the polymer (A) contained in 100 mass % of body ingredient is 50 mass % or more.
14. a kind of manufacturing method of semiconductor device utilizes processing method according to any one of claim 1 to 10 Object is processed and manufactures semiconductor device.
15. a kind of manufacturing method of semiconductor device, including：
(1) the step of forming laminated body, the laminated body have supporter, temporarily fixed material and wiring layer, herein, described temporary When to fix material include layer (I), and the wiring layer is formed on the temporary fixed material, and the layer (I), which is contained, has following formula (A1) polymer (A) of structural unit shown in；
(2) the step of configuration is selected from least one of semiconductor wafer and semiconductor chip on the wiring layer；
(3) the step of from the support side to the layer (I) irradiation light；And
(4) by the supporter and the wiring layer separation the step of,
[changing 3]
[in formula (A1),
Ar is fused-ring aromatic ring；
-OR1For the base being bonded on the fused-ring aromatic ring, R1For hydrogen atom or the alkyl of carbon number 1~20 ,-OR1 It, can be mutually the same also different in the case of multiple；
R2It is the alkyl of halogen atom or carbon number 1~20, R for the base being bonded on the fused-ring aromatic ring2Exist It, can be mutually the same also different in the case of multiple；
R3For hydrogen atom or organic group, R3It can be mutually the same also different；
The integer that a is 1 or more, the integer that b is 0 or more].
16. a kind of semiconductor device is obtained using the manufacturing method according to claims 14 or 15.
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