CN108364927A - A kind of standard FLASH storages module - Google Patents
A kind of standard FLASH storages module Download PDFInfo
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- CN108364927A CN108364927A CN201710056457.8A CN201710056457A CN108364927A CN 108364927 A CN108364927 A CN 108364927A CN 201710056457 A CN201710056457 A CN 201710056457A CN 108364927 A CN108364927 A CN 108364927A
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- 238000003860 storage Methods 0.000 title claims abstract description 30
- 230000014759 maintenance of location Effects 0.000 title abstract description 14
- 238000012360 testing method Methods 0.000 claims abstract description 36
- 238000005538 encapsulation Methods 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000000605 extraction Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 9
- 239000007787 solid Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 19
- 238000004806 packaging method and process Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- RVCKCEDKBVEEHL-UHFFFAOYSA-N 2,3,4,5,6-pentachlorobenzyl alcohol Chemical compound OCC1=C(Cl)C(Cl)=C(Cl)C(Cl)=C1Cl RVCKCEDKBVEEHL-UHFFFAOYSA-N 0.000 description 1
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000262 chemical ionisation mass spectrometry Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
Abstract
A kind of standard FLASH storages module, including standard built-up circuit plate module（The pin and test point for defining and being laid out containing standard）It is affixed on FLASH units thereon with weldering（FLASH chip, unencapsulated Dice（Wafer）, tear movement piece, FLASH wafer bare dies open）, standard FLASH storage modules, which weld, to be affixed on mainboard, realizes the identical function of FLASH chip, it can be applied in flash disk, SSD solid state disks and various FLASH storage devices, it is simple for process, processing cost is reduced, convenient for the classification of tissue large scale test and expanded application field.
Description
Technical field
The invention belongs to the encapsulation fields of FLASH storage chips, and in particular to a kind of standard FLASH storages module, including
Standardized standard built-up circuit plate module（The standard pin for defining and being laid out containing standard and standard testing point）It is affixed on it with weldering
On FLASH units（FLASH chip, unencapsulated Dice（Wafer）, tear movement piece, FLASH wafer bare dies open）, standard FLASH
Storage module weldering is affixed on mainboard, realizes the identical function of FLASH chip；It can be applied to flash disk, SSD solid state disks and various
In FLASH storage devices；It is simple for process, processing cost is reduced, convenient for the classification of tissue large scale test and expanded application field.
Background technology
FLASH storages at present are widely used among the electronic equipments such as mobile phone, tablet computer, SSD, and FLASH is stored by each
Big production firm is encapsulated as chip, and is supplied to downstream manufacturers to use as standard chips, and chip package sets technique and technology
Standby requirement is very high.
Existing FLASH encapsulation using chip package pattern for the decentralized semiworks coordinated production in Shenzhen by the way of, this
A technical bottleneck is difficult to break through.
Market exists largely without the various Dice by encapsulation（Wafer）With tear movement piece, various Dice open（Wafer）
With tear movement piece open, pin definition and test point define that difference is very big, and ununified pin package defines standard and test point
Encapsulation standard.
Existing FLASH chip, type is various, each FLASH chip is required for special PCBA to correspond to, pin package definition
The random strong, ease for use of setting and poor universality that standard is encapsulated with test point, are not easy to the test point of tissue large-scale pipeline
Class is not easy to expanded application field, is unfavorable for the production of high-volume standard component and uses, is unfavorable for reducing production cost.
In order to solve the above technical problems, the technical scheme is that.
Invention content
One kind being applied to all kinds of FLASH units（FLASH chip, unencapsulated Dice（Wafer）, tear movement piece, FLASH open
Wafer bare die）, it is encapsulated into the method that standard FLASH stores module, specifically includes standard built-up circuit plate module（Containing standard
The standard pin and standard testing point of definition and layout）It is affixed on FLASH units thereon with weldering.
The invention mainly solves the technical problem of providing a kind of simple for process, reduce processing cost, offer standard draws
Foot and standard testing point structure and the standard FLASH of definition store module.
Originally needing to weld bonding using gold thread, new process aluminum steel can also reach technology requirement, and packaging technology simplifies,
Technological requirement is reduced, Collaborative division of labor production model is adapted to.
It is changed to encapsulate on plate by encapsulating in piece, each I/O mouthfuls correspondence for being connected to standard built-up circuit plate module of FLASH units is drawn
Foot, CE feet separate, and being converted into the standard FLASH that standard defines by BGA stores module, fixed using standardized pin and structure
After justice, standard testing point layout definition, FLASH units are changed to industry universal one kind by each producer by the standard packaging respectively formulated
The standard FLASH of standard packaging stores module.
It encapsulates FLASH cell types and includes but not limited to FLASH wafers, tears machine FLASH chip, Dice open（Wafer）Core
Piece etc. meets all kinds of FLASH units of big factory rules and regulations model；The corresponding different type standard built-up circuit template die of all types of FLASH units
Block, it then follows identical standard pin and standard testing point definition and layout, FLASH units are sealed with corresponding standard built-up circuit plate module
It fills composition standard FLASH and stores module.
Standard FLASH storage modules are in mirror image correspondence with mainboard corresponding surface pad, and standard FLASH storage modules are logical
Welding spot welding is crossed to be affixed on mainboard.
The standard built-up circuit plate module for encapsulating FLASH units, use coincident circuit connection request bilayer and it is double-deck with
On all kinds of circuit board materials such as PCB or satisfactory FPC, circuit plate thickness reference notation closes that totle drilling cost is optimal, processing is complicated
Spend it is low and meet installation specification principle determination.
26 standard pins for being distributed in standard switching circuit board module edge and being arranged through two sides, as shown in Fig. 4,
Specific alignment placement, standard switching circuit board modular shape are rectangle, size 22mm*14.1mm, edge adjacent modular pin
Center spacing 1.2mm.
Standard switching circuit board module edge distribution 26 standard pins, be defined as D7, D6, D5, D4, D3, D2, D1,
D0, CE7, CE6, CE5, CE4, CE3, CE2, CE1, CE0, VCC, VCCQ, GND, DQS, RB, RE, CLE, ALE, WE, WP, connection
Correspondence pad on the corresponding pin and mainboard of FLASH units.
Standard switching circuit board module standard pin function is defined as CLE (order latch function), ALE（Address latch work(
Energy）, CE0-CE7 (chip enabled), RE (reading enabled), WE (writing enabled), WP (write-protect), RB (ready, busy output signal),
VCC/VCCQ (power supply), GND (), DQS (data control function), D0-D7 (transmission data, order, address).
In standard FLASH corresponding with mainboard welding surface storage module one sides, it is regularly arranged that 26 round ranks are set
Standard testing point, be D7, D6, D5, D4, D3, D2, D1, D0, CE7, CE6, CE5, CE4, CE3, CE2, CE1, CE0, VCC, GND,
DQS、RB、RE、CLE、ALE、WE、WP。
Standard testing point be laid out, according to be conducive to draw and convenient for be arranged test point principle draw.
, standard switching circuit board modular mid portion in regular ranks as shown in figure 4, be distributed, adjacent modular in row or column
Test point is in the heart away from 2mm, each standard testing spot diameter 1.0mm.
Standard testing point is defined as CLE (order latch function), ALE（Address latch function）, (chip makes CE0-CE7
Can), RE (read enabled), WE (writing enabled), WP (write-protect), RB (ready, busy output signal), VCC/VCCQ (power supply), GND
(), DQS (data control function), D0-D7 (transmission data, order, address).
Traditional big factory's chip package pattern and module packaging model comparision of the present invention:
Wafer -- ＞ chip packages ----＞ Product jointings encapsulate (chip package pattern)
Chip -- ＞ module packagings --- ＞ Product jointings encapsulate (module packaging pattern)
Wafer -- ＞ module packagings --- ＞ Product jointings encapsulate (module packaging pattern)
It is encapsulated on plate, relative to chip package, packaging technology simplifies, and reduces technological requirement, adapts to Collaborative division of labor production mould
Formula.
Description of the drawings
Fig. 1 is FLASH chip encapsulating products form schematic diagram；
Fig. 2 is the encapsulating products form schematic diagram using standard FLASH of the present invention storage modules；
Fig. 3 is standard built-up circuit plate module two sides of the present invention schematic diagram：It is the faces A to be affixed on FLASH elemental areas, is affixed on
Mainboard face is the faces B；
Fig. 4 is the standard built-up circuit plate module of standard FLASH storages module of the present invention, and layout includes unified definition
Standard pin and standard testing point (faces A perspective view) schematic diagram；
Fig. 5 is the circuit layout schematic diagram that standard FLASH storages module of the present invention is welded on mainboard；
Fig. 6 is that the mainboard pin layout of welding standard FLASH storage modules and standard FLASH of the present invention storage modules draw
Foot layout contrasts schematic diagram in mirror image correspondence；
Fig. 7 is to store module embodiment, A, B using standard FLASH of the present invention（Module packaging pattern）With C（Chip seals
Die-filling formula）Packaged type comparison schematic diagram；
Fig. 8 is encapsulation process CIMS (chip package pattern and module packaging model comparision) schematic diagram；
Fig. 9 is standard FLASH storages module packaging chip schematic diagram of the present invention；
Figure 10 is that standard FLASH storages module packaging chip veneer of the present invention contrasts schematic diagram；
Figure 11 is standard FLASH storages module packaging wafer schematic diagram of the present invention；
Figure 12 is standard FLASH storages module packaging wafer side view of the present invention；
Figure 13 is that standard FLASH storages module packaging wafer veneer of the present invention contrasts schematic diagram.
Reference numeral and abbreviation
U1:Standard FLASH stores module；
U2:Main control unit；
U3:Standard interface (standard data interfaces such as USB, SATA)；
U4:Mainboard and necessary peripheral circuit；
FLASH units:Need various FLASH wafers bare dies, the unencapsulated Dice encapsulated（Wafer）
, need the FLASH chip encapsulated again, tear movement piece open.
Specific implementation mode
Each I/O mouthfuls of corresponding pin for being connected to standard built-up circuit plate module of FLASH units, CE feet are separated, are converted by BGA
Module is stored at the standard FLASH that standard defines, using standardized pin and structure definition, standard testing point layout definition.
Standard FLASH stores module, and related circuit module U2U3U4 can polytypic multiplexing.
Encapsulation FLASH cell types include but not limited to FLASH wafers, tear machine FLASH chip, Dice open（Wafer）Chip
Etc. all kinds of FLASH units for meeting big factory rules and regulations model.
The corresponding different type standard built-up circuit plate module of different FLASH units, all follow identical standard pin and
Standard testing point definition and layout.
Different FLASH units store module with corresponding standard built-up circuit plate module encapsulation composition standard FLASH.
Standard FLASH storage modules are in mirror image correspondence with mainboard corresponding surface pad, and weld spot welding by corresponding
It is affixed on mainboard.
Embodiment one：
Fig. 9, Figure 10 are standard FLASH storages module packaging FLASH chip schematic diagrames of the present invention.FLASH chip encapsulates
The method for storing module at standard FLASH：FLASH chip weldering is affixed in standard built-up circuit plate module.
Embodiment two：
Figure 11, Figure 12, Figure 13 are standard FLASH storages module packaging FLASH wafer schematic diagrams of the present invention.FLASH is brilliant
The method that circle is packaged into standard FLASH storage modules：FLASH wafers are by bonding flow bonding in standard built-up circuit plate module
On.
Two class standard switching circuit boards define pin all in accordance with identical standard and define test point.
It is as shown in Fig. 4 to be specifically defined standard, the specific alignment placement of standard built-up circuit plate module, shape is rectangle, ruler
Very little is 22mm*14.1mm, edge adjacent modular pin center spacing 1.2mm, pin perforation two sides.
26 standard pins, be defined as D7, D6, D5, D4, D3, D2, D1, D0, CE7, CE6, CE5, CE4, CE3, CE2,
CE1, CE0, VCC, VCCQ, GND, DQS, RB, RE, CLE, ALE, WE, WP, the corresponding pin of perforation connection FLASH units and master
Correspondence pad on plate.
The standard pin function of standard built-up circuit plate module is defined as CLE (order latch function), ALE（Address latch
Function）, CE0-CE7 (chip enabled), RE (reading enabled), WE (writing enabled), WP (write-protect), RB (ready, busy output signal),
VCC/VCCQ (power supply), GND (), DQS (data control function), D0-D7 (transmission data, order, address).
It is as shown in Fig. 4 that standard testing point is specifically defined standard, is distributed in the faces standard built-up circuit plate module B middle part
Point, it is distributed in regular ranks, adjacent modular test point is in the heart away from 2mm, each standard testing spot diameter 1.0mm in row or column.
26 regularly arranged standard testing points of round ranks are set, be D7, D6, D5, D4, D3, D2, D1, D0, CE7,
CE6、CE5、CE4、CE3、CE2、CE1、CE0、VCC、GND、DQS、RB、RE、CLE、ALE、WE、WP。
Standard testing point is defined as CLE (order latch function), ALE（Address latch function）, (chip makes CE0-CE7
Can), RE (read enabled), WE (writing enabled), WP (write-protect), RB (ready, busy output signal), VCC/VCCQ (power supply), GND
(), DQS (data control function), D0-D7 (transmission data, order, address).
Claims (12)
1. a kind of standard FLASH stores module, it is characterised in that：The built-up circuit plate module defined using standard pin and structure
Each pin is in one-to-one relationship with FLASH unit pins, and the weldering of FLASH units is affixed in standard built-up circuit plate module.
2. a kind of standard FLASH stores module, it is characterised in that：According to the standard pin described in right 1, drawn using 26 standards
Foot, be defined as D7, D6, D5, D4, D3, D2, D1, D0, CE7, CE6, CE5, CE4, CE3, CE2, CE1, CE0, VCC, VCCQ,
GND, DQS, RB, RE, CLE, ALE, WE, WP can connect one to one to FLASH unit corresponding pins.
3. a kind of standard FLASH stores module, it is characterised in that：Standard pin function according to right 1 is defined as CLE
(order latch function), ALE（Address latch function）, CE0-CE7 (chip enabled), RE (reading enabled), WE (writing enabled), WP
(write-protect), RB (ready, busy output signal), VCC/VCCQ (power supply), GND (), DQS (data control function), D0-D7
(transmission data, order, address).
4. a kind of standard FLASH stores module, it is characterised in that：Normal structure according to right 1 is distributed for standard pin
It is arranged in board edge and runs through circuit board two sides.
5. a kind of standard FLASH stores module, it is characterised in that：It is attached to the test point 26 that standard layout is arranged in mainboard one side in weldering
It is a, it can be used for testing the standard FLASH storage modules after encapsulation FLASH units.
6. a kind of standard FLASH stores module, it is characterised in that：26 standard testing points according to right 5 be defined as D7,
D6、D5、D4、D3、D2、D1、D0、CE7、CE6、CE5、CE4、CE3、CE2、CE1、CE0、VCC、GND、DQS、RB、RE、CLE、
ALE、WE、WP。
7. a kind of standard FLASH stores module, it is characterised in that：26 standard testing point functions according to right 5 are specific
It is set as CLE (order latch function), ALE（Address latch function）, CE0-CE7 (chip enabled), RE (reading enabled), (write makes WE
Can), WP (write-protect), RB (ready, busy output signal), VCC/VCCQ (power supply), GND (), DQS (data control function),
D0-D7 (transmission data, order, address).
8. a kind of standard FLASH stores module, it is characterised in that：According to right 5 standard testing point layout, according to conducive to
Principle extraction drawing and convenient for setting standard testing point, is distributed in the middle section of module rectangular surfaces, is in round point shape ranks
Arrangement.
9. a kind of standard FLASH stores module, it is characterised in that：Standard FLASH storage module standard pins and mainboard corresponding surface
Upper pad is in mirror image correspondence, and standard FLASH storage modules are affixed on by welding spot welding on mainboard, and realize electrical connection.
10. a kind of standard FLASH stores module, it is characterised in that：It includes but not limited to FLASH that it, which encapsulates FLASH cell types,
Wafer tears machine FLASH chip, Dice open（Wafer）Chip etc. meets the various FLASH chips of specification.
11. a kind of standard FLASH stores module, it is characterised in that：The corresponding standard built-up circuit template die of all types of FLASH units
Block follows identical standard pin definition and identical standard testing point layout.
12. a kind of standard FLASH stores module, it is characterised in that：Its standard switching circuit board modular shape is rectangle, and size is
22mm*14.1mm, edge adjacent modular pin center spacing 1.2mm, adjacent modular test point is in the heart away from 2mm in row or column, respectively
Standard testing spot diameter 1.0mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710056457.8A CN108364927A (en) | 2017-01-26 | 2017-01-26 | A kind of standard FLASH storages module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710056457.8A CN108364927A (en) | 2017-01-26 | 2017-01-26 | A kind of standard FLASH storages module |
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| Publication Number | Publication Date |
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| CN108364927A true CN108364927A (en) | 2018-08-03 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1808703A (en) * | 2005-01-21 | 2006-07-26 | 慧荣科技股份有限公司 | Chip package saving package pin positions and its packaging method |
| CN201607955U (en) * | 2010-02-03 | 2010-10-13 | 深圳市江波龙电子有限公司 | Flash memory chip |
| CN202257646U (en) * | 2011-08-31 | 2012-05-30 | 深圳市劲升迪龙科技发展有限公司 | Packaging structure with built-in TSOP (Thin Small Outline Package) storage IC |
| CN204885503U (en) * | 2015-08-31 | 2015-12-16 | 夏向武 | Flash disk module |
-
2017
- 2017-01-26 CN CN201710056457.8A patent/CN108364927A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1808703A (en) * | 2005-01-21 | 2006-07-26 | 慧荣科技股份有限公司 | Chip package saving package pin positions and its packaging method |
| CN201607955U (en) * | 2010-02-03 | 2010-10-13 | 深圳市江波龙电子有限公司 | Flash memory chip |
| CN202257646U (en) * | 2011-08-31 | 2012-05-30 | 深圳市劲升迪龙科技发展有限公司 | Packaging structure with built-in TSOP (Thin Small Outline Package) storage IC |
| CN204885503U (en) * | 2015-08-31 | 2015-12-16 | 夏向武 | Flash disk module |
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Application publication date: 20180803 |