CN108364888A - Detection device - Google Patents
Detection device Download PDFInfo
- Publication number
- CN108364888A CN108364888A CN201810142961.4A CN201810142961A CN108364888A CN 108364888 A CN108364888 A CN 108364888A CN 201810142961 A CN201810142961 A CN 201810142961A CN 108364888 A CN108364888 A CN 108364888A
- Authority
- CN
- China
- Prior art keywords
- chamber
- detection device
- array substrate
- treatment fluid
- titration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
Abstract
The present invention provides a kind of detection device, the detection device includes first chamber, second chamber, treatment fluid titration outfit, air extractor, transmission device and monitoring device, the treatment fluid titration outfit is set to the top of the first chamber, the air extractor is connect with the first chamber, the monitoring device is set to the top of the second chamber, and the transmission device is for array substrate to be sequentially delivered in the first chamber, second chamber.Detection device proposed by the present invention includes first chamber, second chamber, treatment fluid titration outfit, air extractor, transmission device and monitoring device, chemical etching is carried out by the area to be tested for the treatment of fluid titration outfit array substrate in the first chamber, the grain size of the polysilicon in the area to be tested after chemical etching is monitored by monitoring device in second chamber, clearly SEM figures can be obtained on line to realize, reduced production cost, are improved production efficiency and yield.
Description
Technical field
The present invention relates to the characterization processes technical field of array substrate more particularly to a kind of detection devices.
Background technology
Low temperature polycrystalline silicon (Low Temperature Poly-Silicon, LTPS) display screen is in the small ruler in middle and high end in recent years
Very little product has been got more and more applications, and LTPS display screens have high-resolution, high aperture, high reaction speed, low-power consumption
The advantages that, it is widely used in smart mobile phone and tablet computer.
In the production process of LTPS display screens, it is often used quasi-molecule laser annealing technology (Excimer Laser
Anneal, ELA) convert non-crystalline silicon (a-Si) to polysilicon (Poly-Si).In ELA processing procedures, the grain size of Poly-Si
(Grain Size) is important monitoring project.However, industry is generally using (Offline) monitor mode under line to Poly-Si
Grain Size be monitored, i.e., after needing the array substrate fragmentation that monitors in producing line, carry out chemical etching, send to sweeping
It retouches Electronic Speculum (SEM) and claps figure measurement Grain Size.Such method increases actual production cost, and can not be to each chip arrays
Substrate is monitored.The Grain Size of Poly-Si are monitored according to (Inline) monitor mode on line, then because can not
Chemical etching is carried out, causes Inline SEM shooting pictures extremely fuzzy, judgement of the board to grain boundary can be influenced, to make
It is larger that error is calculated at Grain Size.
Invention content
In order to solve the deficiencies in the prior art, the present invention provides a kind of detection device, can be on line to the crystalline substance of polysilicon
Grain size is monitored and can obtain clearly SEM figures, reduces production cost, improves production efficiency and yield.
Specific technical solution proposed by the present invention is：A kind of detection device is provided, the detection device include first chamber,
Second chamber, treatment fluid titration outfit, air extractor, transmission device and monitoring device, the treatment fluid titration outfit are set to institute
The top of first chamber is stated, the air extractor is connect with the first chamber, and the monitoring device is set to the second chamber
Top, the transmission device is for array substrate to be sequentially delivered in the first chamber, second chamber.
Further, the treatment fluid titration outfit includes reaction solution titration structure and cleaning solution titration structure, described anti-
Liquid titration structure and the cleaning solution titration structure is answered to be set to the top of the first chamber.
Further, the treatment fluid titration outfit further includes the first drive mechanism, the reaction solution titration structure and institute
It states cleaning solution titration structure and is set to the upper of first drive mechanism, first drive mechanism is fixed on the first chamber
Top.
Further, the monitoring device includes lens arrangement and electronics recurring structure, and the lens arrangement is set to described
On electronics recurring structure, the electronics recurring structure is fixed on the top of the second chamber.
Further, the monitoring device further includes the second drive mechanism being set at the top of the second chamber, the electricity
Sub- recurring structure is fixed on second drive mechanism.
Further, the detection device further includes the first ejector pin component being set in the first chamber, and/or is set to
The second ejector pin component in the second chamber.
Further, the detection device further includes the first pressure test device being set in the first chamber.
Further, the detection device further includes the second pressure test device and condenser pump, the second air pressure detection
Device is set in the second chamber, and the condenser pump is connect with the second chamber.
Further, the air extractor includes molecular pump and dry pump, the molecular pump be connected to the dry pump with it is described
Between first chamber.
Further, the detection device further includes the heating device being set in the first chamber, the heating device
For being heated to the array substrate.
Detection device proposed by the present invention includes first chamber, second chamber, treatment fluid titration outfit, air extractor, biography
Device and monitoring device are sent, chemistry is carried out by the area to be tested for the treatment of fluid titration outfit array substrate in the first chamber
Etching, in second chamber by monitoring device come the grain size to the polysilicon in the area to be tested after chemical etching into
Row monitoring can obtain clearly SEM figures to realize, reduce production cost, improves production efficiency and yield on line.
Description of the drawings
Below in conjunction with the accompanying drawings, it is described in detail by the specific implementation mode to the present invention, technical scheme of the present invention will be made
And other beneficial effects are apparent.
Fig. 1 is the structural schematic diagram of detection device.
Specific implementation mode
Hereinafter, with reference to the accompanying drawings to detailed description of the present invention embodiment.However, it is possible to come in many different forms real
The present invention is applied, and the present invention should not be construed as limited to the specific embodiment illustrated here.On the contrary, providing these implementations
Example is in order to explain the principle of the present invention and its practical application, to make others skilled in the art it will be appreciated that the present invention
Various embodiments and be suitable for the various modifications of specific intended application.In the accompanying drawings, identical label will be used for table always
Show identical element.
Referring to Fig.1, detection device provided in this embodiment includes first chamber 1, second chamber 2, treatment fluid titration outfit
3, air extractor 4, transmission device 5 and monitoring device 6.Treatment fluid titration outfit 3 is set to the top of first chamber 1, air extractor 4
It is connect with first chamber 1, monitoring device 6 is set to the top of second chamber 2, and transmission device 5 is for array substrate 7 to be sequentially transmitted
Into first chamber 1, second chamber 2.
First chamber 1 and second chamber 2 are set on transmission device 5 and respectively with transmission device 5 and form a sealed chamber.
Reaction chamber of the first chamber 1 as array substrate 7, detection chambers of the second chamber 2 as array substrate 7.Treatment fluid titrates
For that will react in drop-coated to the area to be tested of array substrate 7, air extractor 4 is used for gas in first chamber 1 device 3
Discharge.Array substrate 7 includes polysilicon layer and the film layer on polysilicon layer, the film layer in reaction solution and area to be tested
Expose polysilicon layer after being chemically reacted, monitoring device 6 be used for the grain size of the polysilicon layer in area to be tested into
Row detection.
Treatment fluid titration outfit 3 includes reaction solution titration structure 31 and cleaning solution titration structure 32, reaction solution titration structure
31 and cleaning solution titration structure 32 be set to first chamber 1 top.Reaction solution titration structure 31 will be for that will react drop-coated extremely
In the area to be tested of array substrate 7, cleaning solution titration structure 32 will be for that will clean drop-coated to the area to be detected of array substrate 7
In domain, by area to be tested reactant or remaining reaction solution remove.Wherein, reaction solution is acid solution, the liquid of reaction solution
Drop size is at least 10-3Mg ranks, cleaning solution are mainly deionized water, and the droplet size of cleaning solution is also at least 10-3Mg grades
Not.
For raising efficiency, the treatment fluid titration outfit 3 in the present embodiment may include multiple reaction solution titration structures 31
With multiple cleaning solution titration structures 32, the actual number of reaction solution titration structure 31 and cleaning solution titration structure 32 can be according to battle array
The size of row substrate 7 determines.
Treatment fluid titration outfit 3 further includes the first drive mechanism 33, reaction solution titration structure 31 and cleaning solution titration structure
32 are set to the upper of the first drive mechanism 33, and the first drive mechanism 33 is fixed on the top of first chamber 1.It is tied by the first transmission
Structure 33 can drive reaction solution titration structure 31 and cleaning solution titration structure 32 to be moved in the top of array substrate 7, to be poised for battle
Each position of the area to be tested of row substrate 7 carries out drop coating.
Monitoring device 6 includes lens arrangement 61 and electronics recurring structure 62, and lens arrangement 61 is set to electronics recurring structure 62
On, electronics recurring structure 62 is fixed on the top of second chamber 2.Wherein, lens arrangement 61 includes electron lens and magnetic lenses, i.e.,
Monitoring device 6 in the present embodiment is scanning electron microscope, and the to be detected of array substrate 7 can be obtained by monitoring device 6
The SEM of grain size in region schemes.
For raising efficiency, the monitoring device 6 in the present embodiment may include multiple lens arrangements 61 and multiple electronics hair
The actual number of raw structure 62, lens arrangement 61 and electronics recurring structure 62 can be determined according to the size of array substrate 7.
Monitoring device 6 further includes being set to second drive mechanism 63 at 2 top of second chamber, and electronics recurring structure 62 is fixed on
On second drive mechanism 63.It can be with drive lens structure 61 and electronics recurring structure 62 in array base by the second drive mechanism 63
The top of plate 7 is moved, to which the grain size at each position of the area to be tested of array substrate 7 is detected.
Detection device in the present embodiment further includes the first ejector pin component 8 being set in first chamber 1.First ejector pin component
8 include equally distributed multiple thimbles 81, is used to jack up array substrate 7 from transmission device 5.The material of multiple thimbles 81
It is acid resistant material, to avoid by reaction corrosion.
Likewise, the detection device in the present embodiment further includes the second ejector pin component 9 being set in second chamber 2.Second
Ejector pin component 9 includes equally distributed multiple thimbles 91, is used to jack up array substrate 7 from transmission device 5.Wherein, more
The material of a thimble 91 is common material.
Air extractor 4 in the present embodiment includes molecular pump 41 and dry pump 42, and molecular pump 41 is connected to dry pump 42 and first
Between chamber 1.Molecular pump 41 is for handling remaining reaction solution molecule in first chamber 1, and dry pump 42 is for extracting the out
Gas in one chamber 1 so that first chamber 1 is in low vacuum state, by molecular pump 41 first by remaining reaction solution molecule
Dry pump 42 can be corroded to avoid reaction solution molecule by carrying out processing, so as to shorten the service life of dry pump 42.Wherein, first chamber 1
In air pressure be 10-6Pa can shorten the pretreatment time in first chamber 1, improving production efficiency in this way.
Detection device further includes the first pressure test device 10 being set in first chamber 1.First pressure test device 10
For monitoring the air pressure in first chamber 1, so that the air pressure of entire first chamber 1 is in stable state.
Detection device further includes the second pressure test device 11 and condenser pump 12, and the second pressure test device 11 is set to second
In chamber 2, condenser pump 12 is connect with second chamber 2.Condenser pump 12 is for so that second chamber 2 is in high vacuum state, and second
Pressure test device 11 is used to monitor the air pressure in second chamber 2, so that second chamber 2 is in stable state.Wherein, second
Air pressure in chamber 2 is 10-8Pa can be more advantageous to monitoring device 6 and be detected in this way.
Detection device further includes the heating device (not shown) being set in first chamber 1, and heating device is used for array base
Plate 7 heats, and is evaporated with being more advantageous to remaining reaction solution so that molecular pump 41 is easier remaining reaction solution molecule being discharged.
The mode that heating device array substrate 7 is heated can be passed through heated by being inserted into tracheae in thimble 81 in tracheae
Gas carrys out array substrate 7 and is heated, and can also be directly to connect heating device with thimble 81, by being carried out to thimble 81
It heats to transfer heat to array substrate 7.
First chamber 1 in the present embodiment is directly contacted with second chamber 2, set on the side wall of second chamber 2 there are one pass
Door 21, transmission device 5 is sent to be sent to array substrate 7 in second chamber 2 from first chamber 1 by transmission gate 21.Wherein, it passes
Door is sent to be in vacuum state.
The detection process of entire detection device is described below in detail.First, array substrate 7 is sent to by transmission device 5
In one chamber 1, after array substrate 7 aligns, thimble 81 jacks up array substrate 7.First chamber 1 is closed, molecular pump 41 and dry pump
42 open, and until first chamber 1 is in low vacuum state, molecular pump 41 and dry pump 42 are closed.Reaction solution titration structure 31 is by
One drive mechanism 33 is sent to the top of the area to be tested of array substrate 7 and to be checked to array substrate 7 by drop-coated is reacted
It surveys in region.When pending liquid reacts more complete with the film layer in area to be tested, cleaning solution titration structure 32 will clean drop
It is applied in the area to be tested of array substrate 7.Then, heated by heating device array substrate 7, molecular pump 41 with it is dry
Pump 42 is again turned on, and after the pending liquid evaporation completely of this process, waits for that stable gas pressure, transmission gate 21 are opened, and transmission device 5 is by array
Substrate 7 is sent in second chamber 2, and condenser pump 12 is opened, and until second chamber 2 is in high vacuum state, monitoring device 6 is poised for battle
The area to be tested of row substrate 7 is taken pictures, and to obtain the SEM figures of area to be tested, polycrystalline can be obtained according to SEM figures
The grain size of silicon layer.
The detection device that the present embodiment proposes is waited in first chamber 1 by 3 array substrate 7 for the treatment of fluid titration outfit
Detection zone carries out chemical etching, by monitoring device 6 come in the area to be tested after chemical etching in second chamber 2
The grain size of polysilicon is monitored, and can be obtained clearly SEM figures on line to realize, be reduced production cost, carries
Production efficiency and yield are risen.
The above is only the specific implementation mode of the application, it is noted that for the ordinary skill people of the art
For member, under the premise of not departing from the application principle, several improvements and modifications can also be made, these improvements and modifications are also answered
It is considered as the protection domain of the application.
Claims (10)
1. a kind of detection device, which is characterized in that including first chamber, second chamber, treatment fluid titration outfit, air extractor,
Transmission device and monitoring device, the treatment fluid titration outfit are set to the top of the first chamber, the air extractor and institute
First chamber connection is stated, the monitoring device is set to the top of the second chamber, and the transmission device is used for array substrate
It is sequentially delivered in the first chamber, second chamber.
2. detection device according to claim 1, which is characterized in that the treatment fluid titration outfit includes reaction solution titration
Structure and cleaning solution titration structure, the reaction solution titration structure and the cleaning solution titration structure are set to the first chamber
Top.
3. detection device according to claim 2, which is characterized in that the treatment fluid titration outfit further includes the first transmission
Structure, the reaction solution titration structure and the cleaning solution titration structure are set to the upper of first drive mechanism, and described the
One drive mechanism is fixed on the top of the first chamber.
4. detection device according to claim 1, which is characterized in that the monitoring device includes lens arrangement and electronics hair
Raw structure, the lens arrangement are set on the electronics recurring structure, and the electronics recurring structure is fixed on the second chamber
Top.
5. detection device according to claim 4, which is characterized in that the monitoring device further includes being set to second chamber
Second drive mechanism in ceiling portion, the electronics recurring structure are fixed on second drive mechanism.
6. detection device according to claim 1, which is characterized in that further include the first top being set in the first chamber
Needle assemblies, and/or the second ejector pin component in the second chamber.
7. detection device according to claim 1, which is characterized in that further include the first gas being set in the first chamber
Press detection device.
8. detection device according to claim 1, which is characterized in that further include the second pressure test device and condenser pump,
Second pressure test device is set in the second chamber, and the condenser pump is connect with the second chamber.
9. detection device according to claim 1, which is characterized in that the air extractor includes molecular pump and dry pump, institute
Molecular pump is stated to be connected between the dry pump and the first chamber.
10. detection device according to claim 1, which is characterized in that further include the heating being set in the first chamber
Device, the heating device are used to heat the array substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810142961.4A CN108364888A (en) | 2018-02-11 | 2018-02-11 | Detection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810142961.4A CN108364888A (en) | 2018-02-11 | 2018-02-11 | Detection device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108364888A true CN108364888A (en) | 2018-08-03 |
Family
ID=63006051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810142961.4A Pending CN108364888A (en) | 2018-02-11 | 2018-02-11 | Detection device |
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| Country | Link |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111370348A (en) * | 2020-03-03 | 2020-07-03 | 武汉大学 | Semiconductor cleaning device with online monitoring function |
| CN111370344A (en) * | 2020-03-03 | 2020-07-03 | 武汉大学 | Monitoring system for on-line monitoring semiconductor substrate etching process |
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|---|---|---|---|---|
| CN101188192A (en) * | 2006-11-21 | 2008-05-28 | 应用材料股份有限公司 | Method and apparatus for integrating metrology with etch processing |
| CN103236406A (en) * | 2013-04-15 | 2013-08-07 | 阿特斯(中国)投资有限公司 | Method for detecting polycrystalline silicon wafer dislocation density |
| CN107039315A (en) * | 2017-04-12 | 2017-08-11 | 武汉华星光电技术有限公司 | Grain size monitoring device and grain size monitoring method in producing line |
| CN107515272A (en) * | 2017-08-30 | 2017-12-26 | 浙江工业大学 | A kind of ammonia nitrogen on-line computing model based on distillation titration |
-
2018
- 2018-02-11 CN CN201810142961.4A patent/CN108364888A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101188192A (en) * | 2006-11-21 | 2008-05-28 | 应用材料股份有限公司 | Method and apparatus for integrating metrology with etch processing |
| CN103236406A (en) * | 2013-04-15 | 2013-08-07 | 阿特斯(中国)投资有限公司 | Method for detecting polycrystalline silicon wafer dislocation density |
| CN107039315A (en) * | 2017-04-12 | 2017-08-11 | 武汉华星光电技术有限公司 | Grain size monitoring device and grain size monitoring method in producing line |
| CN107515272A (en) * | 2017-08-30 | 2017-12-26 | 浙江工业大学 | A kind of ammonia nitrogen on-line computing model based on distillation titration |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111370348A (en) * | 2020-03-03 | 2020-07-03 | 武汉大学 | Semiconductor cleaning device with online monitoring function |
| CN111370344A (en) * | 2020-03-03 | 2020-07-03 | 武汉大学 | Monitoring system for on-line monitoring semiconductor substrate etching process |
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Application publication date: 20180803 |
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