CN108344357A - Medium-temperature resistance strain gauge and preparation method thereof - Google Patents
Medium-temperature resistance strain gauge and preparation method thereof Download PDFInfo
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- CN108344357A CN108344357A CN201810123502.1A CN201810123502A CN108344357A CN 108344357 A CN108344357 A CN 108344357A CN 201810123502 A CN201810123502 A CN 201810123502A CN 108344357 A CN108344357 A CN 108344357A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000011888 foil Substances 0.000 claims abstract description 71
- 239000004696 Poly ether ether ketone Substances 0.000 claims abstract description 34
- 229920002530 polyetherether ketone Polymers 0.000 claims abstract description 34
- 239000003292 glue Substances 0.000 claims abstract description 28
- 239000004642 Polyimide Substances 0.000 claims abstract description 17
- 229920001721 polyimide Polymers 0.000 claims abstract description 17
- 239000011265 semifinished product Substances 0.000 claims abstract description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 27
- 235000009161 Espostoa lanata Nutrition 0.000 claims description 14
- 240000001624 Espostoa lanata Species 0.000 claims description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 13
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 13
- 229920002379 silicone rubber Polymers 0.000 claims description 13
- 235000011187 glycerol Nutrition 0.000 claims description 12
- 238000007689 inspection Methods 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 11
- 238000000206 photolithography Methods 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 230000007797 corrosion Effects 0.000 claims description 10
- 238000005260 corrosion Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 238000004026 adhesive bonding Methods 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 5
- 239000004744 fabric Substances 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- 229920000742 Cotton Polymers 0.000 claims description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 238000006386 neutralization reaction Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 238000004321 preservation Methods 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 238000009966 trimming Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000005452 bending Methods 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- -1 ether ketone Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Laminated Bodies (AREA)
Abstract
Description
技术领域technical field
本发明涉及应变计技术领域,更具体地说,是涉及一种中温电阻应变计及其制备方法。The invention relates to the technical field of strain gauges, in particular to a medium-temperature resistance strain gauge and a preparation method thereof.
背景技术Background technique
随着现代科学技术的飞跃发展,自动化程度的提高,电阻应变计测量技术得到非常广泛地应用,它不但具有准确度高、易远距离传输等优点,而且可以在高温、高压、高速、强磁场等特殊条件下进行结构构件的应力应变测量。电阻应变计作为敏感元件可制成各种测力、测压、位移等传感器,在工业、科学实验中广泛使用。With the rapid development of modern science and technology and the improvement of automation, resistance strain gauge measurement technology has been widely used. It not only has the advantages of high accuracy and easy long-distance transmission, but also can be used in high temperature, high Stress and strain measurements of structural members under special conditions. As a sensitive element, the resistance strain gauge can be made into various force measurement, pressure measurement, displacement and other sensors, and is widely used in industrial and scientific experiments.
电阻应变计根据许用的工作温度范围可分为常温、中温、高温及低温应变计,其中,能否研制出中温电阻应变计,主要取决于三个基本条件:(1)箔材原料的性能及耐温能力;(2)应变基底胶的抗温能力及性能;(3)合理的制作工艺。。Resistance strain gauges can be divided into normal temperature, medium temperature, high temperature and low temperature strain gauges according to the allowable working temperature range. Among them, whether the medium temperature resistance strain gauge can be developed mainly depends on three basic conditions: (1) The performance of the foil material and temperature resistance; (2) temperature resistance and performance of the strained base adhesive; (3) reasonable production process. .
发明内容Contents of the invention
本发明的目的在于克服现有技术中的上述缺陷,提供一种中温电阻应变计及其制备方法。The object of the present invention is to overcome the above-mentioned defects in the prior art, and provide a medium-temperature resistance strain gauge and a preparation method thereof.
为实现上述目的,本发明的第一方面提供了一种中温电阻应变计的制备方法,包括以下步骤:In order to achieve the above object, the first aspect of the present invention provides a method for preparing a medium temperature resistance strain gauge, comprising the following steps:
S1、将聚醚醚酮膜固定在玻璃板上,通过匀胶机将聚酰亚胺胶均匀地甩到聚醚醚酮膜表面,以实现均匀上胶;S1. Fix the polyether ether ketone film on the glass plate, and evenly throw the polyimide glue onto the surface of the polyether ether ketone film through a glue spreader to achieve uniform gluing;
S2、将上胶后的聚醚醚酮膜放入到烘箱中,烘烤2~2.5个小时,烘烤温度为38~40℃;S2. Put the glued polyetheretherketone film into an oven and bake for 2 to 2.5 hours at a temperature of 38 to 40°C;
S3、取出烘烤后的聚醚醚酮膜,将聚醚醚酮膜的胶面与预先制备好的线路箔材对齐贴合,形成应变计半成品;S3. Take out the baked polyetheretherketone film, and align and bond the glue surface of the polyetheretherketone film to the pre-prepared circuit foil to form a semi-finished strain gauge;
S4、将应变计半成品放置到夹具中,初步拧紧夹具中的所有锁固螺母,之后将夹具摆放在压力机压头下,通过压力机压紧夹具,并通过扳手进一步拧紧夹具中的所有锁固螺母,使夹具在取下后仍然保持在相同的压力状态;S4. Place the semi-finished strain gage in the fixture, preliminarily tighten all the lock nuts in the fixture, then place the fixture under the pressure head of the press, press the fixture with the press, and further tighten all the locks in the fixture with a wrench Fix the nut so that the clamp still maintains the same pressure state after it is removed;
S5、将装有应变计半成品的夹具放入到烘箱中固化,从室温升至200~250℃,保温3个小时后停止烘烤,自然降温至室温取出;S5. Put the jig with the semi-finished strain gauge into the oven for curing, raise the temperature from room temperature to 200-250°C, stop baking after 3 hours of heat preservation, and cool down to room temperature naturally to take it out;
S6、卸下夹具中的所有锁固螺母,取出经层压固化后制得的中温电阻应变计。S6. Unload all the locking nuts in the fixture, and take out the medium-temperature resistance strain gauge obtained after lamination and curing.
作为优选的,在步骤S6之后还包括以下步骤:As preferably, after step S6, the following steps are also included:
S7、用渗有丙三醇/微粉溶液的棉球对中温电阻应变计的焊点进行打磨,打磨后用渗有酒精的棉球对中温电阻应变计的正反面进行擦洗,再用渗有丙酮的棉球擦洗中温电阻应变计的正反面,然后用无纺布或棉花擦洗中温电阻应变计的正反面,擦洗干净后晾干;S7. Grind the solder joints of the medium-temperature resistance strain gauge with a cotton ball soaked in glycerin/micropowder solution. After grinding, use a cotton ball soaked in alcohol to scrub the front and back of the medium-temperature resistance strain gauge, and then use acetone soaked Wipe the front and back of the medium temperature resistance strain gauge with a cotton ball, then wipe the front and back of the medium temperature resistance strain gauge with non-woven cloth or cotton, wipe clean and dry;
S8、对中温电阻应变计依次进行修剪、外观检验、分选和包装。S8. Perform trimming, appearance inspection, sorting and packaging on the medium-temperature resistance strain gauges in sequence.
作为优选的,所述匀胶机的转速控制为1800~2000转/分,时间为20~26秒;所述压力机的压力设置为650~700Kg。Preferably, the speed of the homogenizer is controlled at 1800-2000 rpm, and the time is 20-26 seconds; the pressure of the press is set at 650-700Kg.
作为优选的,所述线路箔材的制备方法包括以下步骤:As preferably, the preparation method of the circuit foil comprises the following steps:
S101、光刻:在光刻前用渗有无水乙醇/微粉溶剂的纱布对箔材原料的表面打磨去氧化,以实现清洗;将清洗后的箔材原料用防静电刷清除表面的异物,并通过匀胶机将将光刻胶均匀地甩到箔材原料表面;将上胶后的箔材原料放入到烘箱进行烘烤,自室温升至100℃,保温18~20分钟后停止烘烤,冷却至室温;S101. Photolithography: before photolithography, use gauze impregnated with absolute ethanol/micropowder solvent to polish and deoxidize the surface of the foil raw material to realize cleaning; use an antistatic brush to remove foreign matter on the surface of the cleaned foil raw material, And evenly throw the photoresist onto the surface of the foil material through the glue leveling machine; put the glued foil material into the oven for baking, rise from room temperature to 100°C, keep it warm for 18 to 20 minutes, and then stop baking baked, cooled to room temperature;
S102、曝光:将经过光刻步骤后的箔材原料放置在曝光海绵上,将掩膜版贴紧箔材原料,送入曝光机内曝光;S102. Exposure: place the foil material after the photolithography step on the exposure sponge, attach the mask to the foil material, and send it into the exposure machine for exposure;
S103、显影:将曝光好的箔材原料放入到显影机中与显影液进行显影,显影时间控制在18~22秒;显影完后需要用水冲洗,冲洗后在甩干机上离心甩干,同时用电吹风烘干表面;S103. Developing: Put the exposed foil material into a developing machine and develop it with a developing solution. The developing time is controlled at 18-22 seconds; after developing, it needs to be rinsed with water. Dry the surface with a hair dryer;
S104、腐蚀:将显影好的箔材原料放入到腐蚀机中与腐蚀液进行腐蚀,得到线路箔材,腐蚀温度控制在40~50℃;腐蚀后将线路箔材放入到氨水中进行中和处理,中和时间为3~4秒,在转入清水中浸泡,浸泡时间为3分钟以内;将中和好的线路箔材放入到脱膜液中浸泡28~35秒,待光刻胶彻底溶解后,取出线路箔材用毛刷在清水中冲洗,冲洗干净后在甩水机上离心甩干,甩干后用渗有丙酮的棉球对线路箔材的正反面进行清洗。S104. Corrosion: put the developed foil material into the etching machine and corrode it with the corrosive solution to obtain the circuit foil material. The corrosion temperature is controlled at 40-50°C; after corrosion, put the circuit foil material into ammonia water for processing And treatment, the neutralization time is 3 to 4 seconds, then soak in clean water, the soaking time is within 3 minutes; put the neutralized circuit foil into the stripping solution and soak for 28 to 35 seconds, wait for photolithography After the glue is completely dissolved, take out the circuit foil and rinse it with a brush in clean water. After rinsing, dry it centrifugally on a water spinner. After drying, clean the front and back of the circuit foil with a cotton ball soaked in acetone.
作为优选的,所述步骤S104之后还包括以下步骤:Preferably, after the step S104, the following steps are also included:
S105、半检:将线路箔材放在显微镜下进行微观检验,微观检验后,用电阻表对合格的线路箔材进行阻值检测;S105. Semi-inspection: put the circuit foil material under a microscope for microscopic inspection. After the microscopic inspection, use a resistance meter to detect the resistance value of the qualified circuit foil material;
S106、调阻:用渗有丙三醇/微粉溶液的棉球对阻值不符合要求的线路箔材进行调阻。S106. Resistance adjustment: Use cotton balls soaked with glycerol/micropowder solution to adjust the resistance of the circuit foil whose resistance value does not meet the requirements.
作为优选的,在步骤S101中,所述无水乙醇/微粉溶剂中的组分配比为50ml无水乙醇:10g微粉。As a preference, in step S101, the component distribution ratio in the absolute ethanol/fine powder solvent is 50ml absolute ethanol:10g fine powder.
作为优选的,在步骤S4中,所述夹具包括夹具底板、聚四氟薄膜、硅橡皮、夹具玻璃板、夹具顶板、用于锁紧夹具底板及夹具顶板的螺栓和螺母,所述夹具组装方法为:在夹具底板上放两层聚四氟薄膜,再放一块硅橡皮,再放两层聚四氟薄膜,再放一个应变计半成品,再放一块两面贴有铝箔的夹具玻璃板,再放另一个应变计半成品,再放两层聚四氟薄膜,再放一块硅橡皮,再放两层聚四氟薄膜,按照此顺序依次类推,最后一版需要放置两块硅橡皮,然后安装夹具顶板,通过螺栓和螺母锁紧夹具底板和夹具顶板。As preferably, in step S4, the fixture includes a fixture bottom plate, a polytetrafluoro film, silicon rubber, a fixture glass plate, a fixture top plate, bolts and nuts for locking the fixture bottom plate and the fixture top plate, and the fixture assembly method It is: put two layers of PTFE film on the bottom plate of the fixture, then put a piece of silicon rubber, then put two layers of PTFE film, then put a semi-finished strain gauge, then put a fixture glass plate with aluminum foil on both sides, and then put Another semi-finished strain gauge, put two layers of PTFE film, then put a piece of silicon rubber, then put two layers of PTFE film, and so on in this order, the last version needs to place two pieces of silicon rubber, and then install the top plate of the fixture , Lock the bottom plate of the fixture and the top plate of the fixture through bolts and nuts.
作为优选的,所述丙三醇/微粉溶液中的组分配比为10ml丙三醇:11g微粉。As a preference, the component distribution ratio in the glycerol/micropowder solution is 10ml glycerol: 11g micropowder.
本发明的第二方面提供了一种中温电阻应变计,包括聚醚醚酮膜、聚酰亚胺胶和线路箔材,所述聚酰亚胺胶位于聚醚醚酮膜与线路箔材之间。The second aspect of the present invention provides a medium temperature resistance strain gauge, including a polyether ether ketone film, a polyimide adhesive and a circuit foil, and the polyimide adhesive is located between the polyether ether ketone film and the circuit foil between.
作为优选的,所述聚醚醚酮膜的厚度为18~20μm,所述聚酰亚胺胶的厚度为6~10μm,所述线路箔材的厚度为3.8~5μm。Preferably, the polyether ether ketone film has a thickness of 18-20 μm, the polyimide adhesive has a thickness of 6-10 μm, and the circuit foil has a thickness of 3.8-5 μm.
与现有技术相比,本发明的有益效果在于:Compared with prior art, the beneficial effect of the present invention is:
本发明的制备合理,每个环节都能保证应变计的性能,甩上聚酰亚胺胶后的聚醚醚酮膜放入烘箱时,烘烤时间严格控制在2~2.5个小时,烘烤温度为38~40℃,能够防止聚醚醚酮膜因温度过高发生弯卷变形,并且应变计半成品在层压时是放置到夹具中的,夹具通过压力机压紧后通过锁固螺母锁紧夹具,当整个夹具放入到烘箱加热固化时仍然保持在相同的压力状态,能够使应变计半成品受力平均,避免出现在传统工艺中将应变计放置在层压机中一起层压加热时因受力不均导致的不良问题,本发明的中温电阻应变计的性能稳定,质量高,具有良好的耐温特性。The preparation of the present invention is reasonable, and each link can guarantee the performance of the strain gauge. When the polyetheretherketone film is put into the oven after the polyimide glue is thrown, the baking time is strictly controlled at 2 to 2.5 hours. The temperature is 38-40°C, which can prevent the polyether ether ketone film from bending and deformation due to excessive temperature, and the semi-finished strain gauge is placed in the fixture during lamination, and the fixture is pressed by the press and locked by the lock nut. Tight fixture, when the whole fixture is put into the oven for heating and curing, it still maintains the same pressure state, which can make the strain gauge semi-finished product evenly stressed, avoiding the strain gauge placed in the laminator and laminating together in the traditional process. Due to the bad problem caused by uneven force, the medium temperature resistance strain gauge of the present invention has stable performance, high quality and good temperature resistance.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are For some embodiments of the present invention, those skilled in the art can also obtain other drawings based on these drawings without creative work.
图1是本发明提供的中温电阻应变计的结构示意图。Fig. 1 is a structural schematic diagram of a medium-temperature resistance strain gauge provided by the present invention.
具体实施方式Detailed ways
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
请参考图1,本发明的实施例提供了一种中温电阻应变计,包括聚醚醚酮膜1、聚酰亚胺胶2和线路箔材3,所述聚酰亚胺胶2位于聚醚醚酮膜1与线路箔材2之间。Please refer to Fig. 1, an embodiment of the present invention provides a medium temperature resistance strain gauge, including a polyether ether ketone film 1, a polyimide glue 2 and a circuit foil 3, the polyimide glue 2 is located on the polyether Between the ether ketone film 1 and the circuit foil 2 .
在本实施例中,所述聚醚醚酮膜的厚度可以优选设置为18~20μm,所述聚酰亚胺胶的厚度可以优选设置为6~10μm,所述线路箔材的厚度可以优选设置为3.8~5μm。In this embodiment, the thickness of the polyether ether ketone film can preferably be set to 18-20 μm, the thickness of the polyimide adhesive can be preferably set to 6-10 μm, and the thickness of the circuit foil can be preferably set to 3.8 to 5 μm.
在本实施例中,中温电阻应变计的制备方法包括以下步骤:In this embodiment, the preparation method of the medium temperature resistance strain gauge comprises the following steps:
S1、将聚醚醚酮膜(PEEK)固定在洁净玻璃板上,通过匀胶机将聚酰亚胺胶均匀地甩到聚醚醚酮膜表面,以实现均匀上胶;S1. Fix the polyether ether ketone film (PEEK) on a clean glass plate, and evenly throw the polyimide glue onto the surface of the polyether ether ketone film through a glue spreader to achieve uniform gluing;
在步骤S1中,匀胶机的转速控制为1800~2000转/分,时间为20~26秒。聚醚醚酮膜要摆放在均胶机转盘的中心,上胶后要求胶层均匀,无气泡及缺胶现象。In step S1, the speed of the homogenizer is controlled at 1800-2000 rpm, and the time is 20-26 seconds. The polyether ether ketone film should be placed in the center of the turntable of the glue equalizer. After gluing, the glue layer should be even, without bubbles and lack of glue.
S2、将上完聚酰亚胺胶后的聚醚醚酮膜放入到烘箱中,烘烤2~2.5个小时,烘烤温度为38~40℃;S2. Put the polyetheretherketone film after applying the polyimide glue into an oven, and bake for 2 to 2.5 hours at a temperature of 38 to 40°C;
烘烤时,烘烤温度不能高于40℃,否则上胶后的聚醚醚酮膜会弯曲缩卷,导致聚醚醚酮膜直接报废。When baking, the baking temperature should not be higher than 40°C, otherwise the polyether ether ketone film after gluing will bend and shrink, and the polyether ether ketone film will be scrapped directly.
S3、取出烘烤后的聚醚醚酮膜,将聚醚醚酮膜的胶面与预先制备好的线路箔材对齐贴合,形成应变计半成品;S3. Take out the baked polyetheretherketone film, and align and bond the glue surface of the polyetheretherketone film to the pre-prepared circuit foil to form a semi-finished strain gauge;
S4、将应变计半成品放置到夹具中,初步拧紧夹具中的所有锁固螺母,之后将夹具摆放在压力机压头下,将压力机的压力设置为650~700Kg,通过压力机压紧夹具,并通过扳手进一步拧紧夹具中的所有锁固螺母,使夹具在取下后仍然保持在相同的压力状态;S4. Put the semi-finished strain gage into the fixture, preliminarily tighten all the lock nuts in the fixture, then place the fixture under the pressure head of the press, set the pressure of the press to 650-700Kg, and press the fixture through the press , and further tighten all the lock nuts in the clamp with a wrench, so that the clamp still maintains the same pressure state after it is removed;
在步骤S4中,所述夹具包括夹具底板、聚四氟薄膜、硅橡皮、夹具玻璃板、夹具顶板、用于锁紧夹具底板及夹具顶板的螺栓和螺母。In step S4, the fixture includes a fixture bottom plate, a polytetrafluoro film, a silicon rubber, a fixture glass plate, a fixture top plate, bolts and nuts for locking the fixture bottom plate and the fixture top plate.
所述夹具组装方法为:在夹具底板上放两层聚四氟薄膜,再放一块硅橡皮,再放两层聚四氟薄膜,再放一个应变计半成品(基底面向铝箔),再放一块两面贴有铝箔的夹具玻璃板,再放另一个应变计半成品(基底面向铝箔),再放两层聚四氟薄膜,再放一块硅橡皮,再放两层聚四氟薄膜,按照此顺序依次类推,最后一版需要放置两块硅橡皮,然后安装夹具顶板,底层上完后同时装入弹簧,通过螺栓和螺母锁紧夹具底板和夹具顶板。其中,聚四氟薄膜、硅橡皮、夹具玻璃板要用酒精无纺布清洗干净,要求表面无颗粒、纤维毛等,铝箔要平整紧贴于夹具玻璃板,无凸点、灰尘等。The fixture assembly method is as follows: put two layers of PTFE films on the bottom plate of the fixture, then put a piece of silicon rubber, then put two layers of PTFE films, then put a strain gauge semi-finished product (the base faces the aluminum foil), and then put a piece with two sides Fixture glass plate with aluminum foil, then put another semi-finished strain gauge (the base faces the aluminum foil), then put two layers of PTFE film, then put a piece of silicon rubber, then put two layers of PTFE film, and so on in this order , the last version needs to place two pieces of silicon rubber, and then install the top plate of the fixture. After the bottom layer is installed, the spring is loaded at the same time, and the bottom plate of the fixture and the top plate of the fixture are locked by bolts and nuts. Among them, the PTFE film, silicon rubber, and the glass plate of the fixture should be cleaned with alcohol non-woven cloth, and the surface should be free of particles, fiber hair, etc., and the aluminum foil should be flat and close to the glass plate of the fixture, without bumps, dust, etc.
S5、将装有应变计半成品的夹具放入到烘箱中固化,从室温升至200~250℃,保温3个小时后停止烘烤,自然降温至室温取出;S5. Put the jig with the semi-finished strain gauge into the oven for curing, raise the temperature from room temperature to 200-250°C, stop baking after 3 hours of heat preservation, and cool down to room temperature naturally to take it out;
S6、卸下夹具中的所有锁固螺母,取出经层压固化后制得的中温电阻应变计;S6. Unload all the locking nuts in the fixture, and take out the medium temperature resistance strain gauge made after lamination and curing;
卸夹具时,要求所有锁固螺母同时卸下,按顺序将应变计依次取下,揭取时应保证应变计无皱褶,且无混片现象。When unloading the fixture, all lock nuts are required to be unloaded at the same time, and the strain gauges are removed in sequence. When removing the strain gauges, it should be ensured that there are no wrinkles and no mixed pieces.
S7、用渗有丙三醇/微粉溶液的棉球对中温电阻应变计的焊点进行打磨,打磨后用渗有酒精的棉球对中温电阻应变计的正反面进行擦洗,再用渗有丙酮的棉球擦洗中温电阻应变计的正反面,然后用无纺布或棉花擦洗中温电阻应变计的正反面,擦洗干净后晾干;S7. Grind the solder joints of the medium-temperature resistance strain gauge with a cotton ball soaked in glycerin/micropowder solution. After grinding, use a cotton ball soaked in alcohol to scrub the front and back of the medium-temperature resistance strain gauge, and then use acetone soaked Wipe the front and back of the medium temperature resistance strain gauge with a cotton ball, then wipe the front and back of the medium temperature resistance strain gauge with non-woven cloth or cotton, wipe clean and dry;
S8、对中温电阻应变计依次进行修剪、外观检验、分选和包装。S8. Perform trimming, appearance inspection, sorting and packaging on the medium-temperature resistance strain gauges in sequence.
其中,所述线路箔材的制备方法包括以下步骤:Wherein, the preparation method of the circuit foil comprises the following steps:
S101、光刻:在光刻前对箔材原料进行清洗,用渗有无水乙醇/微粉溶剂的纱布对箔材原料的表面打磨去氧化;将清洗后的箔材原料用防静电刷清除表面的异物,并通过匀胶机将将光刻胶均匀地甩到箔材原料表面;将上胶后的箔材原料放入到烘箱进行烘烤,自室温升至100℃,保温18~20分钟后停止烘烤,冷却至室温;S101. Photolithography: Clean the foil raw material before photolithography, polish and deoxidize the surface of the foil raw material with gauze impregnated with absolute ethanol/fine powder solvent; clean the surface of the cleaned foil raw material with an antistatic brush Foreign matter, and evenly throw the photoresist onto the surface of the foil raw material through the glue leveler; put the glued foil raw material into the oven for baking, rise from room temperature to 100°C, and keep it warm for 18-20 minutes Then stop baking and cool to room temperature;
S102、曝光:将经过光刻步骤后的箔材原料放置在曝光海绵上,将掩膜版贴紧箔材原料,送入曝光机内曝光;S102. Exposure: place the foil material after the photolithography step on the exposure sponge, attach the mask to the foil material, and send it into the exposure machine for exposure;
S103、显影:将曝光好的箔材原料放入到显影机中与显影液进行显影,显影时间控制在18~22秒;显影完后需要用水冲洗,冲洗后在甩干机上离心甩干,同时用电吹风烘干表面;S103. Developing: Put the exposed foil material into a developing machine and develop it with a developing solution. The developing time is controlled at 18-22 seconds; after developing, it needs to be rinsed with water. Dry the surface with a hair dryer;
S104、腐蚀:将显影好的线路箔材放入到腐蚀机中与腐蚀液进行腐蚀,腐蚀温度控制在40~50℃,腐蚀后得到线路箔材;将腐蚀得到后的线路箔材放入到氨水中进行中和处理,中和时间为3~4秒,在转入清水中浸泡,浸泡时间为3分钟以内;将中和好的线路箔材放入到脱膜液中浸泡28~35秒,待光刻胶彻底溶解后,取出线路箔材用毛刷在清水中冲洗,冲洗干净后在甩水机上离心甩干,甩干后用渗有丙酮的棉球对线路箔材的正反面进行清洗;S104. Corrosion: put the developed circuit foil into an etching machine to corrode with the corrosion solution, the corrosion temperature is controlled at 40-50°C, and the circuit foil is obtained after corrosion; put the corroded circuit foil into the Neutralize in ammonia water, the neutralization time is 3-4 seconds, then soak in clean water, the soaking time is within 3 minutes; put the neutralized circuit foil into the stripping solution and soak for 28-35 seconds After the photoresist is completely dissolved, take out the circuit foil and rinse it with a brush in clean water. After rinsing, dry it centrifugally on a water spinner. cleaning;
S105、半检:将线路箔材放在显微镜下进行微观检验,微观检验后,用电阻表对合格的线路箔材进行阻值检测,S105. Semi-inspection: Put the circuit foil material under a microscope for microscopic inspection. After the microscopic inspection, use a resistance meter to perform resistance value detection on qualified circuit foil materials.
S106、调阻:用渗有丙三醇/微粉溶液的棉球对阻值不符合要求的线路箔材进行调阻。S106. Resistance adjustment: Use cotton balls soaked with glycerol/micropowder solution to adjust the resistance of the circuit foil whose resistance value does not meet the requirements.
在步骤S101中,所述无水乙醇/微粉溶剂中的组分配比为50ml无水乙醇:10g微粉。In step S101, the component distribution ratio of the absolute ethanol/fine powder solvent is 50ml of absolute ethanol:10g of fine powder.
在步骤S7和步骤S106中,所述丙三醇/微粉溶液中的组分配比为10ml丙三醇:11g微粉。In step S7 and step S106, the component distribution ratio in the glycerol/micropowder solution is 10ml glycerol: 11g micropowder.
本发明的制备合理,每个环节都能保证应变计的性能,甩上聚酰亚胺胶后的聚醚醚酮膜放入烘箱时,烘烤时间严格控制在2~2.5个小时,烘烤温度为38~40℃,能够防止聚醚醚酮膜因温度过高发生弯卷变形,并且应变计半成品在层压时是放置到夹具中的,夹具通过压力机压紧后通过锁固螺母锁紧夹具,当整个夹具放入到烘箱加热固化时仍然保持在相同的压力状态,能够使应变计半成品受力平均,避免出现在传统工艺中将应变计放置在层压机中一起层压加热时因受力不均导致的不良问题,本发明的中温电阻应变计的性能稳定,质量高,具有良好的耐温特性。The preparation of the present invention is reasonable, and each link can guarantee the performance of the strain gauge. When the polyetheretherketone film is put into the oven after the polyimide glue is thrown, the baking time is strictly controlled at 2 to 2.5 hours. The temperature is 38-40°C, which can prevent the polyether ether ketone film from bending and deformation due to excessive temperature, and the semi-finished strain gauge is placed in the fixture during lamination, and the fixture is pressed by the press and locked by the lock nut. Tight fixture, when the whole fixture is put into the oven for heating and curing, it still maintains the same pressure state, which can make the strain gauge semi-finished product evenly stressed, avoiding the strain gauge placed in the laminator and laminating together in the traditional process. Due to the bad problem caused by uneven force, the medium temperature resistance strain gauge of the present invention has stable performance, high quality and good temperature resistance.
上述实施例为本发明较佳的实施方式,但本发明的实施方式并不受上述实施例的限制,其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化,均应为等效的置换方式,都包含在本发明的保护范围之内。The above-mentioned embodiment is a preferred embodiment of the present invention, but the embodiment of the present invention is not limited by the above-mentioned embodiment, and any other changes, modifications, substitutions, combinations, Simplifications should be equivalent replacement methods, and all are included in the protection scope of the present invention.
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