CN108334143A - A kind of the SiPM gain control systems and its control method of temperature self-adaptation - Google Patents

A kind of the SiPM gain control systems and its control method of temperature self-adaptation Download PDF

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Publication number
CN108334143A
CN108334143A CN201711415796.7A CN201711415796A CN108334143A CN 108334143 A CN108334143 A CN 108334143A CN 201711415796 A CN201711415796 A CN 201711415796A CN 108334143 A CN108334143 A CN 108334143A
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CN
China
Prior art keywords
sipm
temperature
signal
conversion circuits
adaptation
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Pending
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CN201711415796.7A
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Chinese (zh)
Inventor
胡向宇
赵振栋
陶文泽
李斌
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Lanzhou Institute of Physics of Chinese Academy of Space Technology
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Lanzhou Institute of Physics of Chinese Academy of Space Technology
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Priority to CN201711415796.7A priority Critical patent/CN108334143A/en
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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/46Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05BCONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00Programme-control systems
    • G05B19/02Programme-control systems electric
    • G05B19/04Programme control other than numerical control, i.e. in sequence controllers or logic controllers
    • G05B19/042Programme control other than numerical control, i.e. in sequence controllers or logic controllers using digital processors

Abstract

The present invention relates to the SiPM gain control systems and its control method of a kind of temperature self-adaptation, belong to photoelectricity, particle detection field.The system comprises sequentially connected temperature sensor, temperature measuring circuit, A/D conversion circuits, FPGA module, D/A conversion circuits and field ionization source modules.For detector read device SiPM it is very sensitive by variation of ambient temperature, by temperature self-adaptation mode compensation temperature to SiPM gain band come influence, improve the validity of detection data.Automatically controlling for SiPM bias voltages is realized, the service life of SiPM is greatly improved and eliminates the moment impact of front-end electronics, application lays the foundation reliably and with long-term for SiPM.

Description

A kind of the SiPM gain control systems and its control method of temperature self-adaptation
Technical field
The present invention relates to the SiPM gain control systems and its control method of a kind of temperature self-adaptation, belong to photoelectricity, particle Field of detecting.
Background technology
SiPM (Silicon Photo-multiplier, silicon photomultiplier detector) is one gradually risen in recent years Photoelectric detector of the kind for optical detection field, with traditional PMT (Photo multiplier tube, photomultiplier) Compare, SiPM have it is small, convenient for being developed into the form of detector array;It can work, have good anti-under low bias Magnetic interference and mechanical resistant impact property;With high-gain, high photon detection efficiency, quick response and excellent time point The advantages that resolution and wide spectrum response range.The disadvantage is that very sensitive to variation of ambient temperature, variation of ambient temperature can cause SiPM gains are drifted about, and in particle detection application, necessarily so that detection data deviates from truthful data, confidence level is poor. The existing much research about SiPM temperature characterisitics both at home and abroad, the results showed that, when the environment temperature decreases, SiPM relative gains with It is linear increase;SiPM relative gains simultaneously increase with the rising of bias voltage, and linear correlation degree is higher.Currently based on In the engineer applications such as the particle detection of SiPM and nuclear medicine detection, SiPM gain stabilizations control technology more falls behind, and mostly uses hand It is dynamic to adjust to control SiPM bias voltages;When SiPM is powered on, moment impact be easy to cause SiPM devices and front-end electronics electricity is answered Power is damaged.Therefore it needs slowly to adjust bias voltage.
Invention content
In view of this, the purpose of the present invention is to provide a kind of SiPM gain control systems of temperature self-adaptation and its controls Method is exported for bias voltage compensation, and control SiPM gains keep stablizing, and detector is made to read data more really, effectively, And detector service life can be effectively improved.
To achieve the above object, technical scheme is as follows:
A kind of SiPM gain control systems of temperature self-adaptation, the system comprises sequentially connected temperature sensor, temperature Spend measuring circuit, A/D conversion circuits, FPGA module, D/A conversion circuits and field ionization source module;
Temperature sensor, temperature signal for acquiring SiPM are simultaneously exported to temperature measuring circuit;
Temperature measuring circuit, for the temperature signal of acquisition to be converted to voltage signal and is exported to A/D conversion circuits;
A/D conversion circuits, for voltage signal to be converted to the digital signal under Current Temperatures;
FPGA module obtains the digital signal under Current Temperatures, and the target bias under Current Temperatures is calculated by look-up table Value, and generate control signal and export to D/A conversion circuits;
D/A conversion circuits for the control signal to be carried out digital-to-analogue conversion, and are exported to field ionization source module;
Field ionization source module makes the slow drop of the slow liter of output voltage follow to target bias, and export under control of the control signal To SiPM.
Further, further include the low-pass filter being connected between A/D conversion circuits and FPGA module, for filtering number Noise signal in word signal.
Further, further include the comparator being connected between D/A conversion circuits and field ionization source module, for eliminating field electricity Error between source module input voltage and output voltage.
Further, multi-point Temperature Collection is carried out to SiPM using temperature sensor Pt100.
A kind of SiPM gain control methods of temperature self-adaptation, the method step include:
(1) temperature signal of temperature sensor acquisition SiPM, and temperature signal is converted to by electricity by temperature measuring circuit Press signal;
(2) voltage signal is converted to the digital signal of Current Temperatures by A/D conversion circuits, then passes through low-pass filter After filtering, filtered digital signal is input to FPGA module;
(3) FPGA module calculates the target bias value under SiPM Current Temperatures by look-up table, and generates control signal And it exports to D/A conversion circuits excessively;
(4) D/A conversion circuits carry out digital-to-analogue conversion to the control signal, are converted to analog signal and import and export is electric to field Source module;
(5) field ionization source module under control of the control signal, makes the slow drop of the slow liter of output voltage follow to target bias, output To SiPM, the bias of SiPM is finally made to step to target bias.
Advantageous effect:
The SiPM gain control systems and its control method of a kind of temperature self-adaptation of the present invention are read for detector Device SiPM is very sensitive by variation of ambient temperature, by temperature self-adaptation mode compensation temperature to SiPM gain band come shadow It rings, improves the validity of detection data.
In the present invention, temperature acquisition and bias voltage control are carried out using FPGA, keep the volume of whole system very small, simultaneously The occasion in multiple detector concurrent workings, data computational efficiency can be applied high.Since algorithm resource is less, can be placed on In detector main task FPGA, this method will not increase hardware cost.
In the present invention, the slow control for rising slow drop is powered up using FPGA, surge is to SiPM stress damages in elimination, together When up and down slope can arbitrarily adjust;And bias voltage is adjusted independent of manual, realize the automatic of SiPM bias voltages Control.It greatly improves the service life of SiPM and eliminates the moment impact of front-end electronics, application is established reliably and with long-term for SiPM Basis.
Description of the drawings
Fig. 1 is a kind of flow diagram of the SiPM gain control systems of temperature self-adaptation.
Fig. 2 is a kind of SiPM gain control system FPGA algorithms of temperature self-adaptation.
Fig. 3 be a kind of temperature self-adaptation SiPM gain control systems in target bias FPGA algorithms.
Specific implementation mode
As shown in Figure 1, the control system of the present embodiment is controlled by temperature acquisition, FPGA data processing and algorithm, target is inclined Set the output control three parts composition of voltage.A kind of SiPM gain control systems of temperature self-adaptation, the system comprises successively Temperature sensor Pt100, temperature measuring circuit, A/D conversion circuits, low-pass filter, FPGA module, the D/A conversion electricity of connection Road, comparator and field ionization source module.
A kind of SiPM gain control methods of temperature self-adaptation described in the present embodiment, the method step include:
(1) the temperature signal T of the more distributed point acquisition SiPM of temperature sensor Pt100t, and will be warm by temperature measuring circuit Spend signal TtBe converted to voltage signal Vt
(2) voltage signal VtThe digital signal of Current Temperatures is converted to by A/D conversion circuits, then passes through low-pass filtering After device filtering, filtered digital signal T is input to FPGA module;
(3) FPGA module calculates the target bias under SiPM Current Temperatures by look-up table (T- β-V relation database tables) Value Vtmp;Then slow drop algorithm control output digit signals V is risen using slow2To D/A conversion circuits;
(4) D/A conversion circuits are by digital signal V2Be converted to analog signal ViImport and export is to field ionization source module;
(5) field ionization source module under control of the control signal, makes the slow drop of the slow liter of output voltage follow to target bias, output To SiPM, until the output voltage V of field ionization source modulebEqual to target bias.
T- β-V relation database tables in the step (3), are obtained by building SiPM temperature performances ground experiment early period The relationship of bias and temperature under SiPM relative gains, the relationship of relative gain and bias voltage are taken, and then is calculated.According to examination It tests data and corresponds to out the field ionization source voltage that needs adjust when β value being made to keep substantially constant.It is warm in real time using scene in control strategy Degrees of data constantly corrects the bias voltage of SiPM, and then obtains the plant model consistent with site environment.Due to needs pair Detector temperature is accurately measured, then T- β-V tables of data resource will be exponentially-increased, so taking the side of Segment Look-Up Table Method can preferably accomplish the balance between space resources and computational efficiency.
The control of the slow drop of slow liter in the step (4), the course of work is V to configure bias first after equipment startsb =0V;Then the bias V for needing to control is calculated according to Current Temperaturestmp;Raising output is slowly adjusted using FPGA controls D/A Voltage makes VbStepping is increased up equal to Vtmp;VtmpReal time temperature T is followed to make adjustment.If on the contrary, being currently configured bias VbIt is high In VtmpWhen, then VbStep-by-step movement reduces.Work as VbEqual to target bias Vtmp, as complete period bias voltage control process.
As shown in Figure 1, first with A/D (in the present embodiment be 14 A/D) by the corresponding voltage number of temperature inside FPGA Word Vt, recycle low-pass filtering to obtain accurate temperature value T, the table look-up module inside FPGA recycled to obtain current biasing Target voltage Vtmp, then the digital quantity of current D/A inputs is controlled using the slow drop algorithm adjustment of slow liter and finally make the number of output Word amount V2Follow Vtmp, digital quantity is finally converted into analog quantity V by D/A interfacesiIt is input to field ionization source module, field ionization source module Output voltage VbBias is provided for SiPM.Since field ionization source module can be interfered, so pacifying between D/A and field ionization source module Comparator is filled, the error between the input of field ionization source module and output, i.e. V are eliminated in the way of Voltage Feedbackb=Vi×K2
As shown in Fig. 2, the slow purpose for rising slow drop algorithm is to prevent the voltage for being applied to SiPM from mutating.In Ground Application When SiPM bias foundation be that testing crew changes output voltage by slowly adjusting the voltage knob of power supply;Regulations speed By personal experience, this can be being solved the problems, such as using the slow drop algorithm of slow liter;When input temp obtains target bias Vtmp;And Slow rise in slow drop algorithm records current output voltage digital quantity as V2;Work as V2<Vtmp, V2It is incremented by until V2Equal to Vtmp;Similarly V2> Vtmp, V2Successively decrease until V2Equal to Vtmp;Regulations speed is realized by adjusting the size of each incremental change;It is adjusted in the present embodiment Rate is set as 4V/s.
As shown in figure 3, FPGA reads 14 head temperature digital signals, most-significant byte is stored in register XhIn, low 6 digit According to being stored in register XL, according to the T- β-V tables of data that pre-stage test makes, pair of temperature and target bias is found out using look-up table It should be worth.Using two voltage values of consecutive value as the slow step change △ V=V for rising slow dropm-Vn, then bring algorithm expression formula into Vtmp=((Vm-Vn)×XL)>>6+Vn, you can it obtains and biasing target voltage Vtmp
By signal after FPGA algorithms and data processing by the conditioning of DAC and rear end bias field ionization source modular circuit, finally Feedback output is that SiPM gains keep stable target bias voltage.
Invention include but not limited to above example, it is every carried out under the spirit and principles in the present invention it is any equivalent Replacement or local improvement, all will be regarded as within protection scope of the present invention.

Claims (5)

1. a kind of SiPM gain control systems of temperature self-adaptation, it is characterised in that:The system comprises sequentially connected temperature Sensor, temperature measuring circuit, A/D conversion circuits, FPGA module, D/A conversion circuits and field ionization source module;
Temperature sensor, temperature signal for acquiring SiPM are simultaneously exported to temperature measuring circuit;
Temperature measuring circuit, for the temperature signal of acquisition to be converted to voltage signal and is exported to A/D conversion circuits;
A/D conversion circuits, for voltage signal to be converted to the digital signal under Current Temperatures;
FPGA module obtains the digital signal under Current Temperatures, and the target bias value under Current Temperatures is calculated by look-up table, and Control signal is generated to export to D/A conversion circuits;
D/A conversion circuits for the control signal to be carried out digital-to-analogue conversion, and are exported to field ionization source module;
Field ionization source module makes the slow drop of the slow liter of output voltage follow to target bias, and export extremely under control of the control signal SiPM。
2. a kind of SiPM gain control systems of temperature self-adaptation as described in claim 1, it is characterised in that:It further include connection Low-pass filter between A/D conversion circuits and FPGA module, for the noise signal in filtered digital signal.
3. a kind of SiPM gain control systems of temperature self-adaptation as described in claim 1, it is characterised in that:It further include connection Comparator between D/A conversion circuits and field ionization source module, for eliminate field ionization source module input voltage and output voltage it Between error.
4. a kind of SiPM gain control systems of temperature self-adaptation as described in claim 1, it is characterised in that:It is passed using temperature Sensor Pt100 carries out multi-point Temperature Collection to SiPM.
5. a kind of SiPM gain control methods based on temperature self-adaptation described in claim 1, it is characterised in that:The method Step includes:
(1) temperature signal of temperature sensor acquisition SiPM, and temperature signal is converted to by voltage letter by temperature measuring circuit Number;
(2) voltage signal is converted to the digital signal of Current Temperatures by A/D conversion circuits, then passes through low-pass filter and filters Afterwards, filtered digital signal is input to FPGA module;
(3) FPGA module calculates the target bias value under SiPM Current Temperatures by look-up table, and generates control signal and defeated Go out to D/A conversion circuits excessively;
(4) D/A conversion circuits carry out digital-to-analogue conversion to the control signal, are converted to analog signal and import and export to field ionization source mould Block;
(5) field ionization source module under control of the control signal, makes the slow drop of the slow liter of output voltage follow to target bias, output is extremely SiPM finally makes the bias of SiPM step to target bias.
CN201711415796.7A 2017-12-25 2017-12-25 A kind of the SiPM gain control systems and its control method of temperature self-adaptation Pending CN108334143A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110376501A (en) * 2019-04-30 2019-10-25 中国科学院高能物理研究所 A kind of multichannel cascading power source drive module
CN110989753A (en) * 2019-11-25 2020-04-10 中国辐射防护研究院 Adjustable high-resolution power output module suitable for SiPM
CN111124009A (en) * 2019-12-26 2020-05-08 兰州空间技术物理研究所 Autonomous temperature control system for in-orbit operation of deep space energy particle detector
CN113824445A (en) * 2021-09-29 2021-12-21 天津津航计算技术研究所 DAC output self-adaptive calibration method under wide temperature environment
CN114002730A (en) * 2021-11-18 2022-02-01 武汉万集光电技术有限公司 Bias voltage adjusting method and circuit of SIPM detector and laser radar equipment

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1964080A (en) * 2006-11-30 2007-05-16 武汉电信器件有限公司 A SCM-based bias voltage temperature compensation device of APD detector and its control flow
CN104570043A (en) * 2014-12-18 2015-04-29 中国科学院高能物理研究所 Gain control device, system and method for silicon photomultiplier
US20150177394A1 (en) * 2013-12-20 2015-06-25 General Electric Company System and method for compensating temperature gain variation in radiation detectors
CN204479180U (en) * 2015-01-23 2015-07-15 北京奥普维尔科技有限公司 Based on the APD bias voltage temperature compensation system of MAX1932

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1964080A (en) * 2006-11-30 2007-05-16 武汉电信器件有限公司 A SCM-based bias voltage temperature compensation device of APD detector and its control flow
US20150177394A1 (en) * 2013-12-20 2015-06-25 General Electric Company System and method for compensating temperature gain variation in radiation detectors
CN104570043A (en) * 2014-12-18 2015-04-29 中国科学院高能物理研究所 Gain control device, system and method for silicon photomultiplier
CN204479180U (en) * 2015-01-23 2015-07-15 北京奥普维尔科技有限公司 Based on the APD bias voltage temperature compensation system of MAX1932

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
范鹏等: "硅光电倍增器件(SiPM)的自动增益校正", 《核电子学与探测技术》 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110376501A (en) * 2019-04-30 2019-10-25 中国科学院高能物理研究所 A kind of multichannel cascading power source drive module
CN110989753A (en) * 2019-11-25 2020-04-10 中国辐射防护研究院 Adjustable high-resolution power output module suitable for SiPM
CN111124009A (en) * 2019-12-26 2020-05-08 兰州空间技术物理研究所 Autonomous temperature control system for in-orbit operation of deep space energy particle detector
CN113824445A (en) * 2021-09-29 2021-12-21 天津津航计算技术研究所 DAC output self-adaptive calibration method under wide temperature environment
CN113824445B (en) * 2021-09-29 2023-07-28 天津津航计算技术研究所 DAC output self-adaptive calibration method in wide temperature environment
CN114002730A (en) * 2021-11-18 2022-02-01 武汉万集光电技术有限公司 Bias voltage adjusting method and circuit of SIPM detector and laser radar equipment
CN114002730B (en) * 2021-11-18 2024-04-05 武汉万集光电技术有限公司 Bias voltage adjusting method and circuit of SIPM detector and laser radar equipment

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Application publication date: 20180727