CN108318547A - A kind of single suspension beam type gas sensor and sensor array with coiled structure - Google Patents
A kind of single suspension beam type gas sensor and sensor array with coiled structure Download PDFInfo
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- CN108318547A CN108318547A CN201810447480.4A CN201810447480A CN108318547A CN 108318547 A CN108318547 A CN 108318547A CN 201810447480 A CN201810447480 A CN 201810447480A CN 108318547 A CN108318547 A CN 108318547A
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- 239000000725 suspension Substances 0.000 title claims abstract description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000002955 isolation Methods 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000012528 membrane Substances 0.000 claims abstract description 15
- 241001442589 Convoluta Species 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 abstract description 4
- 238000013461 design Methods 0.000 abstract description 3
- 238000003491 array Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 45
- 238000005516 engineering process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000013473 artificial intelligence Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000003319 supportive effect Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/128—Microapparatus
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- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The invention discloses a kind of single suspension beam type gas sensors with coiled structure, including silicon substrate, support membrane, adding thermal resistance, isolation film and the detecting electrode being cascading, the support membrane acts on to provide integrated support, adding thermal resistance is providing the temperature needed for work, adding thermal resistance and detecting electrode are electrically isolated by isolation film, and detecting electrode changes to detection resistance；The sensor has basal body structure and cantilever design, and the end of the cantilever design is curly, and which is provided with gas sensitive.The present invention also provides a kind of sensor arrays being made of single suspension beam type gas sensor with coiled structure.It is an advantage of the current invention that the biosensor power consumption is low, size is small, integrated level is high, simple production process is easy to position, effectively increases production efficiency.
Description
Technical field
The invention belongs to the invention belongs to microelectromechanical systems and gas detection technology field, and in particular to one kind has
The single suspension beam type gas sensor and sensor array of coiled structure.
Background technology
Based on the gas sensor of microelectromechanical systems (MEMS) technology, due to its small size, low-power consumption, high sensitivity
And the features such as quick response, huge application potential is gradually shown, will be expected to replace the gas sensor based on traditional technology,
In the fields extensive use such as Internet of Things, mobile terminal and artificial intelligence.And in MEMS gas sensors, and because being aoxidized using metal
The sensor of object semiconductor (MOS) material has extensive detection range, has in following large-scale application more wide
The market space.
It is mainly in the majority with the research based on outstanding membrane type microheater at present in MEMS MOS gas sensors, the structure
Sensor have lower power consumption, generally can be down to 20 milliwatts, the utility model such as Patent No. 201520759054.6 is special
Profit provides a kind of resistance-type gas sensor with four supports overarm four-layer structure, with what is set gradually from bottom to top
Silicon substrate frame, heating film layer, heating electrode layer and sensitive film layer, wherein heating film layer includes heating film region, the heating film region
It is connect with silicon substrate frame by four overarms.For another example the utility model patent of Patent No. CN201520759055.0 provides
A kind of resistance-type gas sensor with two supports overarm four-layer structure, the sensor also include setting gradually from bottom to top
Silicon substrate frame, heating film layer, heating electrode layer and sensitive film layer, wherein heating film layer includes heating film region, the heating film region
It is connect with silicon substrate frame by two overarms.These more suspension beam type gas sensor power consumptions are although relatively low, but with mobile terminal
With the high speed development of Internet of Things application, needs are had been unable to meet.In the preparation, there are works for more suspension beam type gas sensors simultaneously
The problem of skill complexity, location difficulty, inefficiency.
Invention content
Technical problem to be solved by the present invention lies in：How the power consumption of suspension beam type gas sensor is further decreased.
The present invention solves above-mentioned technical problem using following technical scheme：
A kind of single overarm gas sensor with coiled structure, has basal body structure and suspension beam structure comprising under
Be cascading on and such as lower part
Silicon substrate；
Support membrane, is silicon nitride film, including the first base portion, and a side of first base portion is equipped with upturned first
Cantilever, the end of first cantilever far from the first base portion are equipped with the first curled portion；
A side of adding thermal resistance, including the second base portion, second base portion is equipped with the second upturned cantilever, described
End of second cantilever far from the second base portion is equipped with the second curled portion；Second base portion offers relative to the side of the second cantilever
One window, second cantilever, which is equipped with, extends to the second window of the second curled portion along the second jib-length direction, and described the
Two windows are connected to first window；Second base portion, which is located on the position of the second window both sides, is respectively equipped with the first lead；
Isolation film, is silicon nitride film, including third base portion, and a side of the third base portion is equipped with upturned third
Cantilever, the end of the third cantilever far from third base portion are equipped with third curled portion；Draw corresponding to first on the third base portion
The position of line, which is equipped with, penetrates hole, and first lead is exposed to across accordingly through hole outer；The thickness of the isolation film, which is more than, to be added
The thickness of thermal resistance；
A side of detecting electrode, including the 4th base portion, the 4th base portion is equipped with the 4th upturned cantilever, described
4th end of the cantilever far from the 4th base portion is equipped with Volume Four pars convoluta；4th base portion is equipped with third window away from the side of the 4th cantilever
Mouthful, the 4th cantilever is equipped with the 4th for extending to Volume Four pars convoluta along the 4th jib-length direction and dividing Volume Four pars convoluta
Window, the 4th window is connected to third window, and detecting electrode is divided into two parts；4th base portion does not cover institute
It states and penetrates hole, and it is located on the position of third window both sides and is equipped with the second lead；
The silicon substrate, the first base portion, the second base portion, third base portion and the 4th base portion are correspondingly arranged to form described matrix knot
Structure；First cantilever, the second cantilever, third cantilever and the 4th cantilever are correspondingly arranged, and the Volume Four pars convoluta, third crimp
Portion, the second curled portion and the first curled portion set gradually to form the suspension beam structure from inside to outside；
First curled portion is wrapped with gas sensitive, the gas sensitive and the 4th cantilever contacts.
Preferably, a kind of single suspension beam type gas sensor with coiled structure of the present invention, first cantilever,
The floor projection of second cantilever, third cantilever and the 4th cantilever is rectangular.
Preferably, a kind of single suspension beam type gas sensor with coiled structure of the present invention, first cantilever,
The floor projection of second cantilever, third cantilever and the 4th cantilever be in isosceles trapezoid, and along far from basal body structure direction, first
Cantilever, the second cantilever, third cantilever and the 4th cantilever width gradually increase.
Preferably, a kind of single suspension beam type gas sensor with coiled structure of the present invention, on the support membrane
Equipped with the first hole, first hole extends to the first curled portion from the first cantilever close to one end of the first base portion.
Preferably, a kind of single suspension beam type gas sensor with coiled structure of the present invention, on the isolation film
Equipped with the second hole, second hole extends to third curled portion from third cantilever close to one end of third base portion.
Preferably, a kind of single suspension beam type gas sensor with coiled structure of the present invention, on the isolation film
Equipped with the second hole, second hole extends to third curled portion from third cantilever close to one end of third base portion, and in the first hole
It is correspondingly arranged.
Preferably, a kind of single suspension beam type gas sensor with coiled structure of the present invention, the 4th base portion
Positioned at the side for deviating from third cantilever through hole, and the 4th cantilever is located at two through between hole.
Preferably, a kind of single suspension beam type gas sensor with coiled structure of the present invention, the 4th base portion
Positioned at transmission hole close to the side of third cantilever.
Preferably, a kind of single suspension beam type gas sensor with coiled structure of the present invention, the support membrane add
The thickness of thermal resistance, isolation film and detecting electrode is
The present invention also provides a kind of sensor arrays, by a kind of single suspension beam type gas sensor of multiple above-mentioned warpages
It constitutes.
The technology of the present invention advantageous effect：
Effective district is arranged in the end of overarm using single suspension beam type structure for technical solution of the present invention, effective by reducing
Area's area and reduction overarm quantity make the power consumption of sensor be down to 1 milliwatt；The coiled structure of the gas sensor can be than same
The planarized structure of homalographic loads more sensitive materials, is conducive to provide sensitivity and the stability of sensor；Its size
Smaller, integrated level higher, the more existing more suspension beam type structures of integrated level improve an order of magnitude；
The preparation method of gas sensor proposed by the present invention is simple for process, is easy to position, and effectively increases production efficiency,
It is also easier to prepare the gas sensitive of the composite construction with makings material simultaneously.
Description of the drawings
Fig. 1 is the structural representation of single suspension beam type gas sensor with coiled structure described in the embodiment of the present invention one
Figure；
Fig. 2 is the exploded perspective view of Fig. 1；
Fig. 3 is enlarged diagram at A in Fig. 2；
Fig. 4 is enlarged diagram at B in Fig. 2；
Fig. 5 is the explosion signal of single suspension beam type gas sensor with coiled structure described in the embodiment of the present invention two
Figure；
Fig. 6 is the structural schematic diagram of the sensor array described in the embodiment of the present invention three.
Specific implementation mode
For ease of those skilled in the art understand that technical solution of the present invention, in conjunction with Figure of description to the technology of the present invention side
Case is described further.
Embodiment one
Refering to fig. 1 to Fig. 4, a kind of single suspension beam type gas sensor of warpage is present embodiments provided, including silicon substrate 1,
Support membrane 2, adding thermal resistance 3, isolation film 4, detecting electrode 5 and gas sensitive 6.
The sensor has basal body structure and suspension beam structure, and under normal circumstances, basal body structure is rectangular, suspension beam structure setting
At the middle part of one long side of basal body structure, thus, the floor projection of the sensor is in T-shape.Its concrete structure is as follows：
The upper and lower end face of the silicon substrate 1 is rectangular；
The support membrane 2 is a silicon nitride layer to play a supportive role to entire suspension beam structure.Including the first base portion
21, the first cantilever 22 and the first curled portion 23.First base portion 21 is rectangular, first cantilever, 22 and first base portion 21
The middle part of one long side connects, and the first cantilever 22 is upturned；First curled portion 23 setting is in the first cantilever 22 far from the
The end of one base portion 21.
The adding thermal resistance 3 is made of metal material, generally metal platinum, required to be provided for working sensor
Operating temperature.The adding thermal resistance 3 includes the second base portion 31, the second cantilever 32 and the second curled portion 33, and second base portion 31 is in
Rectangle, second cantilever 32 is located at the middle part of 31 1 long side of the second base portion, and the second cantilever 32 is upturned；The volume Two
Pars convoluta 33 is located at end of second cantilever 32 far from the second base portion 31；Second base portion 31 is opened up relative to the side of the second cantilever 32
There are first window 34, second cantilever 32 to be equipped with and extend to the second of the second curled portion 33 along 32 length direction of the second cantilever
Window 35, second window 35 are connected to first window 34；Second base portion position 31 is on the position of 35 both sides of the second window points
It She You not the first lead (not shown).
The isolation film 4 is silicon nitride film, and setting purpose is electrically isolated to adding thermal resistance 3 and detecting electrode 5.Every
Include third base portion 41, third cantilever 42 and third curled portion 43 from film 4, the third cantilever 41 is arranged in third base portion 41 1
The middle part of long side, and third cantilever 42 is upturned；It is equipped with and penetrates corresponding to the position of the first lead on the third base portion 41
Hole 44, first lead pass through accordingly outer through being exposed to behind hole 44；The third curled portion 43 is arranged in third cantilever 42
End far from third base portion 41；The thickness of the isolation film 4 is more than the thickness of adding thermal resistance 3.
The detecting electrode 5 is generally precious metal material electrode, such as metal platinum or gold.The detecting electrode 5 includes the 4th base
Portion 51, the 4th cantilever 52 and Volume Four pars convoluta 53, the 4th cantilever 52 are arranged at the middle part of 51 1 long side of the 4th base portion, and the
Four cantilevers 52 are upturned；The Volume Four pars convoluta 53 is arranged in the 4th end of the cantilever 52 far from the 4th base portion；4th base portion
51 relative to the 4th cantilever 52 side be equipped with third window 54, the 4th cantilever 52 be equipped with prolongs along 52 length direction of the 4th cantilever
Extend to Volume Four pars convoluta 53, and the 4th window 55 that Volume Four pars convoluta 53 is divided, the 4th window 55 and third window 54
Connection, and detecting electrode 5 is divided into two parts；4th base portion 41 does not cover the transmission hole 44, and it is located at third window
The position of 54 both sides is equipped with the second lead (not shown).
The silicon substrate 1, the first base portion 21, the second base portion 31, third base portion 41 and the 4th base portion 51 are correspondingly arranged to be formed
Described matrix structure；First cantilever 22, the second cantilever 32, third cantilever 42 and the 4th cantilever 52 are correspondingly arranged, and described
Third curled portion 43 wraps up Volume Four pars convoluta 53, and second curled portion 33 wraps up third curled portion 43, first curled portion
23 form the suspension beam structure including the second curled portion 33.
The gas sensitive 6 is made of the metal oxide semiconductor material under nanoscale, such as stannic oxide, zinc oxide
Or other oxides etc..The gas sensitive 6 is wrapped in outside the first curled portion 23, and is contacted with the 4th cantilever 52, realizes air-sensitive
The electric connection of material 6 and detecting electrode 5.After gas sensitive 6 adsorbs specific gas molecule, resistance can change, from
And achieve the purpose that detection gas.
The core of the gas sensor is the suspension beam structure with coiled structure, for loading the effective of gas sensitive
Region is also only in end of the suspension beam structure far from base portion mechanism.On the one hand, it is reduced because of thermal convection current by reducing the area of effective district
With heat loss caused by heat radiation, another aspect suspension beam structure is thin and grows, and upturned, avoids and is connect with silicon substrate 1
It touches, the thermal loss in heat transfer process can be greatly reduced, thus the sensor has extremely low power consumption；In another aspect, gas
Quick material 6 is wrapped in outside the first curled portion 23, big with the contact area of gas to be detected, and response speed is faster.
It should be noted that the setting of rectangular with basal body structure in the present embodiment, suspension beam structure is long in rectangle basal body structure
It is introduced for the center of side, but this is not stringent regulation, in the actual production process, basal body structure concrete shape
And the installation position of suspension beam structure is configured as needed.
In the present embodiment, the horizontal of first cantilever 22, the second cantilever 32, third cantilever 42 and the 4th cantilever 52 is thrown
Shadow is rectangular.
The sensor can also include the first hole 24 and the second hole 45, and first hole 23 is arranged on the first cantilever 22,
And extend to the first curled portion 23 from the first cantilever 22 close to one end of the first base portion 21.The setting of second hole 45 is outstanding in third
On arm 42, and third curled portion 43 is extended to from third cantilever 42 close to one end of the second base portion 41.It can only be set on sensor
The first hole 24 is set, or the second hole 45 is only set；Both can also be arranged simultaneously, at this point, 45 position pair of the first hole 24 and the second hole
It answers.The thermal loss in heat transfer process is further decreased by the way that long and narrow the first hole 23 and/or the second hole 44 is arranged.
More specifically, the 4th base portion position 51 deviates from the side of third cantilever 42, and the 4th cantilever 52 in transmission hole 44
Positioned at two through between hole 44.Alternatively, the 4th base portion 51 is located at through hole 44 close to the side of third cantilever 42.
In addition, the support membrane 2, adding thermal resistance 3, isolation film 4 and detecting electrode 5 thickness be
First window 34 can be symmetrical structure in the present embodiment, be made by the way that first window 34 and the second window 35 is arranged
Adding thermal resistance 3 is formed as a symmetrical structure；Third window 54 is symmetrical structure, will inspection by third window 54 and the 4th window 55
It surveys electrode 5 and is partitioned into symmetrical two parts.It should be noted that when actual production, as needed, first window 34 and third
Window 54 can also be that asymmetric structure, at this time adding thermal resistance 3 and detecting electrode 5 are also unsymmetric structure.
Sensor described in the present embodiment is prepared using following methods：
(1) silicon substrate and sacrificial layer are selected：According to common single throwing or double throwing silicon chips as substrate, then uses and pass through hot oxygen
The method of change, making a layer thickness isSilicon oxide layer as sacrificial layer；According to soi wafer as substrate, then its
Top layer silicon is used as sacrificial layer, and the thickness of sacrificial layer is 2um at this time；
(2) silicon nitride layer is grown as support membrane 2 on sacrificial layer using Low Pressure Chemical Vapor Deposition；
(3) adding thermal resistance 3 is made：The resistive heater of platinum resistance is made of glass technology；
(4) isolation film 4 is made：Silicon nitride layer is prepared using plasma reinforced chemical vapour deposition method, then utilizes reaction
Ion etching or ion beam etching etch isolation film, are formed and expose adding thermal resistance 3 through hole 44；
(5) detecting electrode 5 is made：Gold or platinum electrode are prepared using stripping technology；
(6) film is discharged：Exposure support membrane is thoroughly etched first with reactive ion etching or ion beam etching, exposes silicon lining
Bottom forms film release window, wet corrosion technique etching sacrificial layer is then utilized, after release, due to silicon nitride layer tensile stress
Effect, suspension beam structure is upturned, and its free end forms coiled structure；
(7) load of gas sensitive 6：The end of the suspension beam structure picks stannic oxide colloid, and 2 are sintered at 600 DEG C
The load for hour completing gas sensitive 6, that is, obtain single suspension beam type gas sensor with coiled structure, then in corresponding position the
One lead, the second lead.
It should be noted that silicon substrate in the present embodiment selection is single throw silicon chip or double throwing silicon chips when, crystal orientation also without
It is strict with；The support membrane 2, adding thermal resistance 3, isolation film 4 and detecting electrode 5 thickness exist as needed In the range of adjust.
Embodiment two
As shown in figure 5, the difference between this embodiment and the first embodiment lies in, first cantilever 22, the second cantilever 32, third
The floor projection of cantilever 42 and the 4th cantilever 52 is in isosceles trapezoid, and along the direction far from basal body structure, the first cantilever 22, the
The width of two cantilevers 32, third cantilever 42 and the 4th cantilever 52 gradually increases.By the company for widening suspension beam structure and basal body structure
Width is connect, while retaining low-power consumption feature possessed by single suspension beam type structure, the machinery for also improving entire sensor is strong
Degree.
The preparation method of sensor described in the present embodiment is compared with embodiment one, the also only difference on preparation parameter.
Embodiment three
In odor identification application, generally require together to work numerous sensor integrations, due to above-described embodiment
One and embodiment two described in single suspension beam type sensor with coiled structure because of the uniqueness of its structure, easily realize multiple
Sensor integrates and constitutes sensor array.As shown in fig. 6, a kind of sensor array is present embodiments provided, by above-mentioned
Single suspension beam type sensor with coiled structure tile, wherein the suspension beam structure of each sensor is respectively positioned on basal body structure
The same side.It is of course also possible to as needed, the suspension beam structure of each sensor be distributed in both sides or the use of basal body structure
Other arrangement modes.
The preparation method of sensor array described in the present embodiment is suitable with the preparation method of sensor in embodiment one,
It only needs in step (6), by the way that etching condition is arranged so that it forms multiple basal body structures after release film and is sequentially connected,
The sensor array of suspension beam structure with a warpage on each basal body structure；Then in the end of each suspension beam structure according to need
The tin dioxide gas-sensitive material of identical or different formula is picked respectively, form single overarm gas sensor with coiled structure
Array.
Technical solution of the present invention is exemplarily described invention above in conjunction with attached drawing, it is clear that the present invention implements
It is not subject to the restrictions described above, as long as the various unsubstantialities for using inventive concept and technical scheme of the present invention progress change
Into, or it is not improved the design of invention and technical solution are directly applied into other occasions, in protection scope of the present invention
Within.
Claims (10)
1. a kind of single overarm gas sensor with coiled structure, which is characterized in that there is basal body structure and suspension beam structure,
Including being cascading from bottom to top such as lower part
Silicon substrate；
Support membrane, is silicon nitride film, including the first base portion, and a side of first base portion is equipped with upturned first and hangs
Arm, the end of first cantilever far from the first base portion are equipped with the first curled portion；
Adding thermal resistance, including the second base portion, a side of second base portion are equipped with the second upturned cantilever, and described second
End of the cantilever far from the second base portion is equipped with the second curled portion；Second base portion offers the first window relative to the side of the second cantilever
Mouthful, second cantilever is equipped with the second window that the second curled portion is extended to along the second jib-length direction, second window
Mouth is connected to first window；Second base portion, which is located on the position of the second window both sides, is respectively equipped with the first lead；
Isolation film, is silicon nitride film, including third base portion, and a side of the third base portion is outstanding equipped with upturned third
Arm, the end of the third cantilever far from third base portion are equipped with third curled portion；Correspond to the first lead on the third base portion
Position be equipped with and penetrate hole, first lead passes through accordingly be exposed to through hole outside；The thickness of the isolation film is more than heating
The thickness of resistance；
Detecting electrode, including the 4th base portion, a side of the 4th base portion are equipped with the 4th upturned cantilever, and the described 4th
End of the cantilever far from the 4th base portion is equipped with Volume Four pars convoluta；4th base portion is equipped with third window away from the side of the 4th cantilever,
4th cantilever is equipped with the 4th window for extending to Volume Four pars convoluta along the 4th jib-length direction and dividing Volume Four pars convoluta
Mouthful, the 4th window is connected to third window, and detecting electrode is divided into two parts；4th base portion does not cover described
Through hole, and it is located on the position of third window both sides and is equipped with the second lead；
The silicon substrate, the first base portion, the second base portion, third base portion and the 4th base portion are correspondingly arranged to form described matrix structure；
First cantilever, the second cantilever, third cantilever and the 4th cantilever are correspondingly arranged, and the Volume Four pars convoluta, third curled portion,
Second curled portion and the first curled portion set gradually to form the suspension beam structure from inside to outside；
First curled portion is wrapped with gas sensitive, the gas sensitive and the 4th cantilever contacts.
2. a kind of single suspension beam type gas sensor with coiled structure according to claim 1, which is characterized in that described
First cantilever, the second cantilever, the floor projection of third cantilever and the 4th cantilever are rectangular.
3. a kind of single suspension beam type gas sensor with coiled structure according to claim 1, which is characterized in that described
First cantilever, the second cantilever, third cantilever and the 4th cantilever floor projection be in isosceles trapezoid, and along far from basal body structure
Direction, the first cantilever, the second cantilever, third cantilever and the 4th cantilever width gradually increase.
4. according to a kind of single suspension beam type gas sensor with coiled structure of claim 1-3 any one of them, feature
It is, the support membrane is equipped with the first hole, and first hole extends to first from the first cantilever close to one end of the first base portion
Curled portion.
5. according to a kind of single suspension beam type gas sensor with coiled structure of claim 1-3 any one of them, feature
It is, the isolation film is equipped with the second hole, and second hole extends to third from third cantilever close to one end of third base portion
Curled portion.
6. a kind of single suspension beam type gas sensor with coiled structure according to claim 4, which is characterized in that described
Isolation film is equipped with the second hole, and second hole extends to third curled portion from third cantilever close to one end of third base portion, and
It is correspondingly arranged in the first hole.
7. a kind of single suspension beam type gas sensor with coiled structure according to claim 1, which is characterized in that described
4th base portion is located at the side for deviating from third cantilever through hole, and the 4th cantilever is located at two through between hole.
8. a kind of single suspension beam type gas sensor with coiled structure according to claim 1, which is characterized in that described
4th base portion is located at through hole close to the side of third cantilever.
9. a kind of single suspension beam type gas sensor with coiled structure according to claim 1, which is characterized in that described
Support membrane, adding thermal resistance, isolation film and detecting electrode thickness be
10. a kind of sensor array, which is characterized in that by multiple such as a kind of list of warpage of claim 1-9 any one of them
Suspension beam type gas sensor is constituted.
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