CN108318525A - A kind of micro thermal conductivity detector insensitive to flow - Google Patents
A kind of micro thermal conductivity detector insensitive to flow Download PDFInfo
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- CN108318525A CN108318525A CN201810306905.XA CN201810306905A CN108318525A CN 108318525 A CN108318525 A CN 108318525A CN 201810306905 A CN201810306905 A CN 201810306905A CN 108318525 A CN108318525 A CN 108318525A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 74
- 239000010703 silicon Substances 0.000 claims abstract description 74
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 74
- 239000011521 glass Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 238000009826 distribution Methods 0.000 claims description 21
- 239000004020 conductor Substances 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 239000012528 membrane Substances 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000013461 design Methods 0.000 abstract description 24
- 230000004044 response Effects 0.000 abstract description 8
- 238000009792 diffusion process Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 43
- 108091006146 Channels Proteins 0.000 description 28
- 239000010410 layer Substances 0.000 description 24
- 238000005516 engineering process Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/20—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
Abstract
A kind of micro thermal conductivity detector insensitive to flow, belongs to microelectromechanical systems field.In the microchannel of silicon base back etched " total score is total " form as gas channel, silicon base is formed there through by two micro- cuboid conductance cells using etching technique in silicon base front, it is formed simultaneously thermistor positioned at the positive mesh-supported film of silicon base and thereon and hangs on above conductance cell, last silicon base is bonded with glass cover-plate and glass substrate completes the production respectively.The structure realizes gas channel and is designed with thermistor non-co-planar, and the microchannel arrangement of conjugate branch form, realize that half diffusion type of gas channel and conductance cell designs, influence of the gas flow fluctuations for thermal conductivity detector (TCD) working performance is substantially reduced, and has taken into account the requirement of response speed simultaneously.In addition, non-co-planar design avoids the interference that channel integrates circuit in traditional design so that being directly integrated electric bridge and interlock circuit in silicon base front becomes simple and practicable.
Description
Technical field
The present invention relates to microelectromechanical systems field, specifically a kind of micro thermal conductivity detector insensitive to flow
Design, can be widely applied to the analysis of various mixed gas.
Background technology
Thermal Conductivity method is to be applied to a kind of method of gas detection earliest, and this method is to utilize temperature-sensitive in thermal conductivity detector (TCD)
The temperature of resistance changes with tested gas volume fraction and respective change this characteristic occurs, and realizes to gas with various volume fraction
Detection.Thermal conductivity detector (TCD) has many advantages, such as that device is simple, cheap, and since it has sound to nearly all gas
It answers, is a kind of common detector, therefore is widely used in gas analysis field.
The problems such as that there are detection sensitivities is low for traditional thermal conductivity detector (TCD), error is big, volume is big and weight is big are serious to limit
Made its application range, with the development of MEMS (Micro-electro-mechanical-system) technology, using MEMS plus
The micro thermal conductivity detector that work Technology design makes makes its volume, weight reduce, and lower power consumption, working performance has also obtained greatly
Improve.But, in current conductivity detector designs scheme, however it remains problems with：
1, in the design of current micro thermal conductivity detector, straight-through structure, i.e. gas is almost used to directly flow through heat
Pond is led, although such design ensure that response speed, simultaneously so that thermal conductivity detector (TCD) is very sensitive for flow, flow waves
It is dynamic larger adverse effect, and the direct punching due to air-flow for suspension strut film in existing design to be generated to its working performance
It hits so that support membrane bad stability is easily damaged.Though there is the appearance of diffusion type structure in traditional conductivity detector designs, by
In the limitation of processing technology, response speed is significantly sacrificed, is applied in practice less.
2, in current micro thermal conductivity detector design, also made using straight-through structure gas channel completely through with heat
Silicon substrate surface where quick resistance is common so that for carrying out the connection of Wheatstone bridge and interlock circuit in silicon substrate surface
Become more difficult, and can only generally select be electrically connected to except silicon base.
It is more simplified while taking into account that response speed requires and the performance that influences of flowed fluctuation is more excellent in order to obtain circuit arrangement
Different micro thermal conductivity detector, the above problem should be the key technical problem that this field researcher solves or optimizes.
Invention content
In view of above-mentioned the problem of being previously mentioned, the present invention proposes a kind of micro thermal conductivity detector insensitive to flow and sets
Meter, it is therefore intended that realize the more simplified circuit arrangement of micro thermal conductivity detector, take into account what response speed and flowed fluctuation influenced
Working performance and other beneficial effects.The specific technical solution of the present invention is as follows：
A kind of micro thermal conductivity detector insensitive to flow, which is characterized in that including：Silicon base (1), upper glass cover-plate
(2), lower glass substrate (3), lower glass substrate (3) and the back side, that is, lower face of silicon base (1) are bonded together, upper glass cover-plate
(2) front, that is, upper surface with silicon base (1) is bonded together；
Silicon base (1) is set there are two cuboid Micro Thermal Conductivity Detector (12), and two cuboid Micro Thermal Conductivity Detectors (12) are cavity
Structure, silicon base (1) upper and lower end face up and down, and two cuboid Micro Thermal Conductivity Detectors (12) are along its length in same straight line
On；
In silicon base (1) back side, that is, lower face, for the etching of each cuboid Micro Thermal Conductivity Detector (12), there are one gas accesses
Channel, an inlet distribution channel, multiple branched bottoms, one outlet busway, a Gas outlet channels are formed " total
It is point total " gas passage of formula；One access road is connected to an inlet distribution channel, inlet distribution channel length direction and length
Cube Micro Thermal Conductivity Detector (12) length direction is parallel, and outlet busway is parallel with inlet distribution channel, and branched bottom is straight line
Type branched bottom, multiple branched bottoms are parallel, vertical and be connected to, Duo Gefen with inlet distribution channel, outlet busway respectively
Subchannel both passes through corresponding cuboid Micro Thermal Conductivity Detector (12) lower part, and with cuboid Micro Thermal Conductivity Detector (12) length direction
Vertically；Outlet busway is connect with Gas outlet channels, and in junction, outlet busway length direction and gas vent are logical
Road length direction is vertical；
The gas passage of two cuboid Micro Thermal Conductivity Detectors (12), arrangement is symmetrical in median plane, a gas passage conduct
Under test gas channel, another is as with reference to gas passage；
It is that each cuboid Micro Thermal Conductivity Detector (12) upper port in upper surface is fixed with two nets in silicon base (1) front
Shape support membrane (13), there are one thermistors (14) for each mesh-supported film (13) upper surface deposition；Thermistor (14) is more
Section folding shape structure side-by-side series form planar structure, i.e. thermistor (14) hangs on cuboid by mesh-supported film (13)
In Micro Thermal Conductivity Detector (12) upper port；The both ends of each thermistor (14) are respectively connected with contact conductor (15), contact conductor
(15) it is located in silicon base (1) front face surface；Two thermistors in each cuboid Micro Thermal Conductivity Detector (12) upper port
(14) along cuboid Micro Thermal Conductivity Detector (12) length direction arrange, four thermistors (14) being equipped in silicon base (1) according to
Secondary tetra- resistance of formation R1, R4, R2, R3, four resistance are connected by contact conductor (15), and at silicon base (1) front edge
Electrode pad (16) is set.
R1, R4 are in the upper port of a cuboid Micro Thermal Conductivity Detector (12), and R2, R3 are in another cuboid Micro Thermal Conductivity Detector
(12) upper port；Amount to four bridge arms that four thermistors (14) constitute Wheatstone bridge, and electricity in two conductance cells
Bridge circuit is directly connected completion by contact conductor (15) on silicon base (1) positive insulating layer.
Further preferred access road and inlet distribution channel junction length direction are vertical, in inlet distribution channel
The side wall of face access road is equipped with the groove (11) that section is fan-shaped.
Further preferred thermistor (14) protrusion mesh-supported film (13) front, it is corresponding in upper glass cover-plate (2)
Groove is equipped with for matching thermistor (14).
The silicon base (1) respectively with upper glass cover-plate (2), lower glass substrate (3) electrostatic bonding.
The inlet distribution channel width is less than outlet busway width, and gas entrance passage width is equal to gas vent
The branched bottom of channel width, single channel has 4, and width is minimum in the channel, and the branched bottom correspondence at 2 edges is located at
Conductance cell edge, 4 branched bottom intervals are equal to be arranged side by side, and for gas access, exit passageway positional symmetry.
Micro- cuboid conductance cell (12) through silicon base (1) of silicon base (1) front-side etch, its underpart and branch
Channel communicates, and runner arrangement forms the design of half diffusion type with conductance cell.Micro- cuboid conductance cell (12) width is logical for each branch
2~4 times of road width.
Two mesh-supported films (13) of arrangement and thermistor (14) thereon above the single Micro Thermal Conductivity Detector (12),
Two thermistors (14) are parallel arrangement relative to lower section airflow direction.
There are the single mesh-supported film (13) 4 supporting beams, wherein contact conductor (15) to exist with thermistor (14)
Realize that connection, two short supporting beams improve stability to Auxiliary support in two long support beam surfaces.Thermistor (14) is with straight
Angle broken line form is snakelike to be arranged on mesh-supported film (13), and thermistor (14) is sputtered deposition in micro process
On the silicon nitride layer surface of mesh-supported film (13).It is the monocrystalline of suitable thickness that mesh-supported film (13), which uses composite membrane, lower layer,
Silicon layer and silica, it is silicon nitride that upper layer is connect with thermistor (14), and thermistor (14) is resistivity height, resistance temperature
The big Pt film resistors of coefficient.
As described above, a kind of micro thermal conductivity detector insensitive to flow provided by the invention has below beneficial to effect
Fruit：
1, it is communicated below branched bottom and conductance cell in the microchannel of " total score is total " form of silicon base back etched, micro- length
Cube conductance cell runs through silicon chip, and mesh-supported film and thermistor are located above conductance cell i.e. front side of silicon wafer, while conductance cell
Width is 2~4 times of branched bottom width, which realizes gas channel and the non-co-planar of thermistor designs, Yi Jiqi
Circulation road is designed with micro- half diffusion type of cuboid conductance cell, substantially reduces gas flow and pressure oscillation for thermal conductivity detector (TCD)
The influence of working performance, while the design of 4 narrow branched bottoms and ensure that thermal conductivity detector (TCD) pair with the location arrangements of conductance cell
In the requirement of response speed.
2, inlet distribution channel width is less than outlet busway, and gas is allow steadily to flow out microchannel, in order to avoid going out
Delay or reflux are formed at mouthful.The arrangement of the fan-shaped depression of face air flow inlet position, helps to make in inlet distribution channel
Gas steadily shunting and outflow.
3, two thermistors are arranged in parallel relative to lower section airflow direction in single conductance cell, avoid general through type
In design air-flow by upstream thermistor by heating and by when the thermistor of downstream heat exchange amount reduce and caused by unfavorable shadow
It rings.Thermistor is sputtered the silicon nitride layer surface for being deposited on mesh-supported film, ensure that good adiabatic insulation effect.
4, the shortcomings that general through type design, has been evaded in non-co-planar design, has liberated silicon base front, has made miniature thermal conductivity
Detector electric bridge and interlock circuit can be connected completion by contact conductor directly on the positive insulating layer of silicon base, more simple
Change.
Description of the drawings
Fig. 1 show micro thermal conductivity detector silicon base structure schematic diagram of the present invention.
Fig. 2 show micro thermal conductivity detector silicon base positive structure schematic of the present invention, is total in two of which conductance cell
Four thermistors of meter constitute four bridge arms of Wheatstone bridge.
Fig. 3 show micro thermal conductivity detector overall structure diagrammatic cross-section of the present invention.
Fig. 4 show micro thermal conductivity detector mesh-supported film and thermistor schematic diagram of the present invention.
Fig. 5 show micro thermal conductivity detector bridge circuit schematic diagram.
Fig. 6 show the procedure of processing schematic diagram of micro thermal conductivity detector of the present invention.
Fig. 7 show micro thermal conductivity detector three dimensional structure diagram of the present invention.
Figure label explanation：
Silicon base 1, upper glass cover-plate 2, lower glass substrate 3, gas access road 4 to be measured, gas exit passageway 5 to be measured, reference
Gas access road 6, reference gas exit passageway 7, inlet distribution channel 8 export busway 9, branched bottom 10, fan-shaped depression
11, Micro Thermal Conductivity Detector 12, mesh-supported film 13, thermistor 14, contact conductor 15, electrode pad 16.
Specific implementation mode
The present invention provides a kind of micro thermal conductivity detector insensitive to flow, core concept is：By existing respectively
The microchannel of mesh-supported film and " total score total " form of the front and back processing with thermistor of silicon base, realizes that its is non-
Coplanar design, while micro- cuboid conductance cell runs through silicon base, its underpart communicates with branched bottom, realize gas channel and
Half diffusion type of conductance cell designs, and overall structure ensure that outside requirement of the micro thermal conductivity detector to response speed, subtract significantly
The small influence of gas flow and pressure oscillation for working performance.Simultaneously because the presence of the not no microchannel in silicon base front,
So that the connection of progress electric bridge and interlock circuit is more simple and practicable on it.The micro thermal conductivity detector of this design, at present
At home and abroad there is not yet report.
The present invention will now be described in detail with reference to the accompanying drawings and examples.
As shown in figure 3, a kind of micro thermal conductivity detector insensitive to flow, overall structure includes silicon base 1, with recessed
The glass cover-plate 2 and glass substrate 3 of slot.Wherein, as shown in Figure 1, the back side of silicon base 1 is integrated with the micro- logical of " total score is total " form
Road, including gas access road 4 to be measured, gas exit passageway 5 to be measured, reference gas access road 6, reference gas exit passageway 7, entrance point
Circulation road 8, outlet busway 9, branched bottom 10, fan-shaped depression 11.As shown in Fig. 2, 1 front of silicon base includes being suspended on to pass through
Wear mesh-supported film 13, thermistor 14, contact conductor 15 and the electrode pad 16 on the Micro Thermal Conductivity Detector 12 of silicon base 1.It is micro-
The three dimensional structure diagram of type thermal conductivity detector (TCD) is as shown in Figure 7.
The branched bottom 10 of the microchannel of " total score the is total " form is communicated with the lower part of Micro Thermal Conductivity Detector 12, mesh-supported
Film 13 and thermistor 14 thereon hang on the top of Micro Thermal Conductivity Detector 12, therefore gas channel is formd with Micro Thermal Conductivity Detector 12
Half diffusion type structure, i.e., when the gas in branched bottom 10 flows through 12 lower part of Micro Thermal Conductivity Detector, portion gas by convection current with
The mode of diffusion reaches 12 top of Micro Thermal Conductivity Detector and gas exchanges is contacted and completed with thermistor 14, avoids air-flow for net
The direct impact of shape support membrane 13,12 width of Micro Thermal Conductivity Detector is preferably 0.4mm, is 2~4 times of 10 width of branched bottom, whole
Body structure ensure that outside requirement of the micro thermal conductivity detector to response speed, substantially reduce flow and pressure oscillation for it
The influence of working performance.
8 width of the inlet distribution channel is preferably 0.4mm, and the width less than outlet busway 9 is preferably 0.6mm,
The design allows gas steadily to flow out microchannel, will not form gas delay or reflux in exit.
Face air flow inlet location arrangements sector depression 11, helps that gas is made steadily to divide in the inlet distribution channel 8
Stream and outflow.
Relative to airflow direction two thermistors 14 of parallel arrangement in the single Micro Thermal Conductivity Detector 12, this avoids one
As through type design in air-flow by upstream thermistor by heating and by when the thermistor of downstream heat exchange amount reduce and cause
Adverse effect.
1 front of the silicon base makes insulating layer, the silica and 0.1~0.4 μ m-thick that are the LPCVD of 1~2 μ m-thick
The material of the silicon nitride of LPCVD, mesh-supported film 13 is silica, silicon nitride and a little silicon not completely removed, wherein using
Silica, the silicon nitride of Rational Thickness make support membrane internal stress greatly reduce.The shape of thermistor 14 is right angle folding form
Serpentine configuration, resistance value is preferably 90 ohm, by 14 sputtering sedimentation of thermistor on the silicon nitride layer surface of mesh-supported film 13,
It ensure that good adiabatic insulation effect, concrete structure are as shown in Figure 4.
The mesh-supported film 13 is equipped with two two short totally 4 supporting beams of length and hangs in Micro Thermal Conductivity Detector 12, well
Being thermally isolated property is increased, heat waste and power consumption are substantially reduced.Contact conductor 15 is connected by two long support beams and thermistor 14
It connects, concrete structure is as shown in Figure 4.
The gas channel forms a kind of non-co-planar design with thermistor 14, has evaded general through type design
The shortcomings that, liberate the front of silicon base 1, micro thermal conductivity detector electric bridge and interlock circuit are by contact conductor 15 directly in silicon base
It connects and completes on the insulating layer of front, and electrode pad 16 is set in edge, it is whole more simplified.Wheatstone bridge circuits are as schemed
Shown in 5, the positive practical electric bridge connection of silicon base 1 is as shown in Figure 2.
A kind of micro thermal conductivity detector insensitive to flow is processed using MEMS technology, procedure of processing signal
Figure is as shown in fig. 6, process includes following basic step：
(a) silicon chip of thickness 0.4mm, cleaning silicon chip is selected to distinguish one layer of 300nm thickness of thermal oxide in front side of silicon wafer and the back side
Silica, what the presence of the thickness oxidation silicon still ensured that silicon base and glass is bonded requirement.
(b) the mask plate a for including electrode pad 16, contact conductor 15 and mesh-supported film 13 is made, above-mentioned mask is utilized
Plate etches the groove of 1380nm depths using silica and photoresist as mask in front side of silicon wafer pre-patterning.
(c) in groove mono- layer of 1 μ m-thick of LPCVD silica, the silicon nitride of mono- layer of 0.1 μ m-thick of LPCVD, two layers of composite membrane
The functional layer of composition removes the oxygen of LPCVD than grooves as electrical insulation layer and the main material of mesh-supported film, etching
SiClx and silicon nitride.The mask plate b of Pt thermistors 14 is made, it is good in front side of silicon wafer pre-etched using photoresist as mask
Silicon nitride surface in groove deposits the Cr/Pt thermal resistor layers of 20nm/150nm using magnetron sputtering technique.Make Au electrodes
The mask plate c of pad 16, Au contact conductors 15, using photoresist as mask, the nitrogen in the good groove of front side of silicon wafer pre-etched
SiClx surface, the Cr/Au electrode layers of 30nm/250nm are deposited using magnetron sputtering technique, and are connect with thermal resistor layer, at this time
A smooth surface is formed in addition to mesh-supported film in front side of silicon wafer, ensures that is be subsequently bonded is smoothed out, and wherein Cr layers
It is used as bonding agent.
(d) the mask plate d for making Micro Thermal Conductivity Detector 12 is used using silica and photoresist as mask in silicon chip back side
Deep reactive ion etch technology etches Micro Thermal Conductivity Detector, and first step etch depth is 195 μm." total score the is total " form of making microchannel
Mask plate e, using silica and photoresist as mask, silicon chip back side use deep reactive ion etch technology etch depth for
200 μm of microchannel, while Micro Thermal Conductivity Detector being etched to 200 μm of depth again, away from silicon base front, there are 5 μ m thicks.
(e) the mask plate f for making the Micro Thermal Conductivity Detector 12 comprising mesh-supported film 13, using photoresist as mask, in silicon
Piece front-side etch discharges mesh-supported film, and Micro Thermal Conductivity Detector 12 and the mesh-supported film 13 being suspended in Micro Thermal Conductivity Detector 12 make
It completes.One layer Cr/Au layers are deposited in Pyrex7740 glass surfaces, using the mask plate d of Micro Thermal Conductivity Detector 12, is tied with Cr/Au layers
Closing light photoresist forms the groove of 100 μm of depth, glass cover-plate 2 in Pyrex7740 glass surfaces as mask using chemical etching
It completes.The groove of 100 μm of etch depth at gas import and export channel position is equally corresponded on 3 surface of glass substrate.Using
Silicon base 1 is bonded with glass cover-plate 2 and glass substrate 3 by electrostatic bonding technology respectively, can at gas import and export channel position
The stainless steel capillary for connecting 0.3mm outer diameters, to complete the making of micro thermal conductivity detector.
Processing method of the present invention, will be golden in silicon chip surface metallization medium layer in processing method different from the past
Belong to stratification thereon, etching removal dielectric layer exposes bond area before last bonding.And in the process of the present embodiment,
It then processes downwards from silicon chip surface, the metallization medium layer specially in the groove that pre-patterning has etched, and is sputtered in its surface
Thermistor and electrode metal layer are deposited, to form a smooth surface in silicon chip surface, ensures follow-up bonding process
It is smoothed out.
In conclusion these are only the preferred embodiment of the present invention, it is not intended to limit protection scope of the present invention.It is all
Any modification and improvement etc., should all be included in the protection scope of the present invention made by within the spirit and principles in the present invention.
Claims (10)
1. a kind of micro thermal conductivity detector insensitive to flow, which is characterized in that including：Silicon base (1), upper glass cover-plate
(2), lower glass substrate (3), lower glass substrate (3) and the back side, that is, lower face of silicon base (1) are bonded together, upper glass cover-plate
(2) front, that is, upper surface with silicon base (1) is bonded together；
Silicon base (1) is set there are two cuboid Micro Thermal Conductivity Detector (12), and two cuboid Micro Thermal Conductivity Detectors (12) are cavity body structure,
Silicon base (1) upper and lower end face up and down, and two cuboid Micro Thermal Conductivity Detectors (12) are along its length on the same line；
In silicon base (1) back side, that is, lower face, for the etching of each cuboid Micro Thermal Conductivity Detector (12), there are one gas accesses to lead to
Road, an inlet distribution channel, multiple branched bottoms, one outlet busway, a Gas outlet channels form " total score
Always " the gas passage of formula；One access road is connected to an inlet distribution channel, inlet distribution channel length direction with it is rectangular
Body minisize conductance cell (12) length direction is parallel, and outlet busway is parallel with inlet distribution channel, and branched bottom is linear type
Branched bottom, multiple branched bottoms are parallel, vertical and be connected to, multiple branches with inlet distribution channel, outlet busway respectively
Channel both passes through corresponding cuboid Micro Thermal Conductivity Detector (12) lower part, and hangs down with cuboid Micro Thermal Conductivity Detector (12) length direction
Directly；Outlet busway is connect with Gas outlet channels, and busway length direction and Gas outlet channels are exported in junction
Length direction is vertical；
The gas passage of two cuboid Micro Thermal Conductivity Detectors (12), arrangement is symmetrical in median plane, and a gas passage is as to be measured
Gas passage, another is as with reference to gas passage；
It is that each cuboid Micro Thermal Conductivity Detector (12) upper port in upper surface is fixed with two netted branch in silicon base (1) front
Film (13) is supportted, there are one thermistors (14) for each mesh-supported film (13) upper surface deposition；Thermistor (14) is rolled over for multistage
Shape structure side-by-side series form planar structure, i.e. thermistor (14) hangs on rectangular body minisize by mesh-supported film (13)
In conductance cell (12) upper port；The both ends of each thermistor (14) are respectively connected with contact conductor (15), contact conductor (15) position
In in silicon base (1) front face surface；Two thermistors (14) in each cuboid Micro Thermal Conductivity Detector (12) upper port are along length
Cube Micro Thermal Conductivity Detector (12) length direction arrange, four thermistors (14) being equipped in silicon base (1) sequentially form R1,
Tetra- resistance of R4, R2, R3, four resistance are connected by contact conductor (15), and electrode is arranged at silicon base (1) front edge and welds
Disk (16).
2. a kind of micro thermal conductivity detector insensitive to flow described in accordance with the claim 1, which is characterized in that R1, R4 exist
The upper port of one cuboid Micro Thermal Conductivity Detector (12), the upper port of R2, R3 in another cuboid Micro Thermal Conductivity Detector (12)；Two
Amount to four bridge arms that four thermistors (14) constitute Wheatstone bridge in a conductance cell, and bridge circuit is directly by electrode
Lead (15) connects completion on silicon base (1) positive insulating layer.
3. a kind of micro thermal conductivity detector insensitive to flow described in accordance with the claim 1, which is characterized in that access road
It is vertical with inlet distribution channel junction length direction, is equipped with and cuts on the side wall of inlet distribution channel face access road
Face is the groove (11) of sector.
4. a kind of micro thermal conductivity detector insensitive to flow described in accordance with the claim 1, which is characterized in that thermistor
(14) protrusion mesh-supported film (13) front, the corresponding groove that is equipped on upper glass cover-plate (2) is for matching thermistor
(14)。
5. a kind of micro thermal conductivity detector insensitive to flow described in accordance with the claim 1, which is characterized in that silicon base
(1) respectively with upper glass cover-plate (2), lower glass substrate (3) electrostatic bonding.
6. a kind of micro thermal conductivity detector insensitive to flow described in accordance with the claim 1, which is characterized in that inlet distribution
Channel width is less than outlet busway width, and gas entrance passage width is equal to Gas outlet channels width, single channel
Branched bottom has 4, and width is minimum in the channel, and the branched bottom at 2 edges, which corresponds to, is located at conductance cell edge, 4 branches
Channel spacing is equal to be arranged side by side, and for gas access, exit passageway positional symmetry.
7. a kind of micro thermal conductivity detector insensitive to flow described in accordance with the claim 1, which is characterized in that cuboid is micro-
Type conductance cell (12) width is 2~4 times of each branched bottom width.
8. a kind of micro thermal conductivity detector insensitive to flow described in accordance with the claim 1, which is characterized in that single miniature
Two mesh-supported films (13) of arrangement and thermistor (14) thereon, two thermistors (14) are opposite above conductance cell (12)
It is to be arranged in parallel in lower section airflow direction.
9. a kind of micro thermal conductivity detector insensitive to flow described in accordance with the claim 1, which is characterized in that mesh-supported
It is the monocrystalline silicon layer and silica of suitable thickness that film (13), which uses composite membrane, lower layer, and it is nitridation that upper layer is connect with thermistor
Silicon；1~2 μm of silicon oxide thickness, 0.1~0.4 μm of silicon nitride thickness.
10. a kind of micro thermal conductivity detector insensitive to flow described in accordance with the claim 1, which is characterized in that the list
A mesh-supported film (13) has 4 supporting beams, and wherein contact conductor (15) and thermistor (14) is in two long support beam tables
Realize that connection, two short supporting beams improve stability to Auxiliary support in face；Thermistor (14) is snakelike in the form of right angle folding
It is arranged on mesh-supported film (13), and thermistor (14) is sputtered and is deposited on mesh-supported film in micro process
(13) silicon nitride layer surface.
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| CN108318525B (en) | 2024-01-05 |
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