CN108293297A - Metallic substrates substrate, circuit board and heater mounted board - Google Patents
Metallic substrates substrate, circuit board and heater mounted board Download PDFInfo
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- CN108293297A CN108293297A CN201680068022.9A CN201680068022A CN108293297A CN 108293297 A CN108293297 A CN 108293297A CN 201680068022 A CN201680068022 A CN 201680068022A CN 108293297 A CN108293297 A CN 108293297A
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- metallic substrates
- resin
- substrates substrate
- metallic
- resin layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The metallic substrates substrate (10) of the present invention is used to form electrical connection and carries the circuit board of the heater of fever, and metallic substrates substrate (10) includes：The metallic plate (6) constituted in tabular and by fine aluminium；The resin layer (5) formed on a face of metallic plate (6)；With the circuit layer (4) formed on one face of resin layer (5), the planarization processing of correction warpage is implemented to metallic substrates substrate (10), and when placed 168 hours under the steam atmosphere of 121 DEG C/100%RH, breakdown voltage value is 3.6kV or more after the moisture absorption of resin layer (5).Thus, it is possible to provide a kind of to manufacture the metallic substrates substrate that the circuit board that electric conductivity can be inhibited to decline planarization processing is implemented even if for the purpose of eliminating warpage, the heater mounted board equipped with heater using the circuit board of the metallic substrates substrate manufacture and in the circuit board.
Description
Technical field
The present invention relates to metallic substrates substrate, circuit board and heater mounted boards.
Background technology
In recent years, it is mostly that there is high fever as mounted electronic unit in the circuit board for installing electronic unit
The component (heater) of property, it is therefore desirable to which circuit board has excellent thermal diffusivity.
Such circuit board in order to obtain, using stacking gradually Metal Substrate made of metallic plate, resin layer and circuit layer
Substrate is patterned by being etched to circuit layer, and the circuit board for obtaining being formed with conducting channel is (for example, ginseng
Examine patent document 1).
In the metallic substrates substrate, because metallic plate, resin layer are different with the coefficient of thermal expansion of circuit layer, manufacturing
Warpage is will produce when metallic substrates substrate.Therefore, to implement to correct the warpage after forming metallic plate, resin layer and circuit layer
Planarization processing, but exist due to implement the planarization processing and circuit layer (circuit) can not be substantially ensured using resin layer
The problem of with the insulating properties of metallic plate.
Existing technical literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2005-281509 bulletins
Invention content
Technical problems to be solved by the inivention
The purpose of the present invention is to provide one kind can manufacture even if implemented for the purpose of eliminating warpage planarization plus
Work can also ensure that the metallic substrates substrate of the circuit board of internal insulating properties, using the circuit of the metallic substrates substrate manufacture
Substrate and the heater mounted board equipped with heater in the circuit board.
Means for solving technical problem
Above-mentioned purpose can be realized by the present invention recorded in following (1)~(11).
(1) a kind of metallic substrates substrate is used to form electrical connection and carries the circuit board of the heater of fever, above-mentioned
Metallic substrates substrate includes：
The metallic plate constituted in tabular and by fine aluminium；
The resin layer formed on a face of above-mentioned metallic plate；With
The circuit layer formed on the said one face of above-mentioned resin layer,
Above-mentioned metallic substrates substrate is characterized in that：
It is steamed when the planarization processing for implementing correction warpage to the metallic substrates substrate, and in the water of 121 DEG C/100%RH
When placed 168 hours under gas atmosphere,
Breakdown voltage value is 3.6kV or more after the moisture absorption of above-mentioned resin layer.
(2) the metallic substrates substrate according to above-mentioned (1), it is characterised in that：The metallic substrates substrate utilizes JIS C
The warpage for the above-mentioned metallic plate that settled process specified in 6481 determines is 0.2% or less.
(3) the metallic substrates substrate according to above-mentioned (1) or (2), it is characterised in that：The average thickness of above-mentioned metallic plate
For 0.3mm or more 1.2mm or less.
(4) the metallic substrates substrate according to any one of above-mentioned (1) to (3), it is characterised in that：Above-mentioned metallic plate
Brinell hardness is 12HB or more 35HB or less.
(5) the metallic substrates substrate according to any one of above-mentioned (1) to (4), it is characterised in that：In above-mentioned metallic plate
The content of other atoms in addition to aluminium atom is 0wt% or more 1.5wt% or less.
(6) the metallic substrates substrate according to any one of above-mentioned (1) to (5), it is characterised in that：Foregoing circuit layer by
Copper or copper series alloy are constituted.
(7) the metallic substrates substrate according to any one of above-mentioned (1) to (6), it is characterised in that：Above-mentioned resin layer by
The hardening thing or solidfied material of resin combination containing resin material and inorganic filling material are constituted.
(8) the metallic substrates substrate according to above-mentioned (7), it is characterised in that：Above-mentioned resin combination also contains coupling
Agent.
(9) the metallic substrates substrate according to above-mentioned (7) or (8), it is characterised in that：Based on above-mentioned inorganic filling material
The coccoid to be made of aluminium oxide.
(10) a kind of circuit board, for what is formed using the metallic substrates substrate described in any one of above-mentioned (1) to (9)
Circuit board, which is characterized in that
Foregoing circuit substrate passes through with the circuit for including the terminal for being electrically connected above-mentioned heater, foregoing circuit to above-mentioned electricity
Road floor is patterned and is formed.
(11) a kind of heater mounted board, which is characterized in that including：Circuit board described in above-mentioned (10)；With with it is upper
Terminal electrical connection is stated, and is mounted in the above-mentioned heater on foregoing circuit substrate.
Invention effect
By using the present invention metallic substrates substrate composition, can manufacture even if in order to correct formed metallic plate,
The warpage that is generated after resin layer and circuit layer and implement planarization processing, also resin layer can be utilized to ensure circuit layer (electricity
Road) circuit board with the insulating properties of metallic plate.
Therefore, by making the heater mounted board of the present invention be to be taken in the circuit board (circuit board of the invention)
It is loaded with the structure of heater, can accurately inhibit or prevents from when using heater mounted board, generating in circuit board
Insulation breakdown.
Description of the drawings
Fig. 1 is the longitudinal section for the embodiment for indicating the metallic substrates substrate of the present invention.
Fig. 2 is the figure illustrated for the manufacturing method to metallic substrates substrate shown in FIG. 1.
When Fig. 3 is for illustrating that generated warpage planarizes when to manufacturing metallic substrates substrate shown in FIG. 1
The figure of the planarizer used.
Specific implementation mode
Hereinafter, preferred embodiment shown in reference to the accompanying drawings, to metallic substrates substrate, circuit board and the hair of the present invention
Hot body mounted board is described in detail.
<Metallic substrates substrate>
Fig. 1 is the longitudinal section for the embodiment for indicating the metallic substrates substrate of the present invention.In addition, hereinafter, for convenience
Illustrate, the upside in Fig. 1 is also referred to as "upper", the downside in Fig. 1 is also referred to as "lower".In addition, in Fig. 1, by metallic substrates
Substrate and its each portion are turgidly schematically shown, but the size and its ratio in metallic substrates substrate and its each portion with
Actually differ widely.
Metallic substrates substrate 10 shown in FIG. 1 includes：In flat metallic plate 6；In the upper surface of the metallic plate 6 (one
A face) on the resin layer 5 that is formed；With the circuit layer 4 formed on the upper surface of the resin layer 5 (face).
Shape is in tabular (sheet) to circuit layer 4 when looking down, and is formed as stratiform in overlay tree lipid layer 5.
By to the circuit layer 4 with defined pattern patterns by form circuit (conducting channel), electricity can be obtained
Base board (circuit board of the invention), the terminal being arranged by forming the circuit are had with heater (electronic unit)
Connection terminal electrical connection.Heater mounted board (the hair of the invention equipped with heater in circuit board is obtained as a result,
Hot body mounted board).
The circuit layer 4 is being patterned when forming circuit, and electrical connection is mounted in the heater in circuit board, and
Has the function as heated sheet that will be transmitted to the lower face side of metallic plate 6 from the heat that heater generates and discharged.
As the constituent material of circuit layer 4, for example, copper, copper series alloy, aluminium, aluminum series alloy, silver, the conjunction of silver system
The various metal materials such as gold, gold, gold system alloy, zinc, Zn based alloy, nickel, nickel system alloy, tin, tin system alloy, iron and iron-based alloy
Material.Wherein, can be by circuit layer 4 in terms of etching is readily derived circuit, preferably copper, copper series alloy.In addition, from
From the perspective of the balance of cost and electric conductivity or thermal conductivity, preferably copper, copper series alloy.That is, circuit layer 4 is particularly preferably by fine copper
Or the copper foil that copper series alloy is constituted is constituted.
In addition, the average thickness of circuit layer 4 is not particularly limited, preferably 0.5 μm or more 105 μm hereinafter, more preferably 1
μm or more 70 μm hereinafter, further preferably 12 μm or more 70 μm or less.By make circuit layer 4 thickness be above-mentioned lower limiting value with
On, pin hole can be generated in suppression circuit layer 4, and then can inhibit or prevent when etched circuit layer 4 forms circuit, generated
The infiltration etc. of the liquids such as thickness deviation, circuit broken string, etching solution or removing glue liquid when circuit pattern formation.In addition, by making electricity
The thickness of road floor 4 is above-mentioned upper limit value hereinafter, can reduce the thickness deviation of circuit layer 4.In addition, by by the thickness of circuit layer 4
Degree setting within the above range, can accurately inhibit or prevent from implementing to generated when manufacturing metallic substrates substrate 10
When the planarization processing that warpage is corrected, cracked in circuit layer 4.
In addition, the thermal conductivity of circuit layer 4 in a thickness direction is preferably 3W/mK or more 500W/mK hereinafter, more preferably
For 10W/mK or more 400W/mK or less.Such circuit layer 4 can will pass through hair it may be said that with excellent thermal conductivity
The driving of hot body and generate heat 6 side of metallic plate is transferred to via 4 higher efficiency of circuit layer.
Shape is in tabular (sheet) to resin layer (bonding layer) 5 when looking down, and with the upper surface of covered metal plate 6
Mode is arranged, that is, is arranged between the metallic plate 6 in circuit layer 4 and positioned at the downside of the circuit layer 4, will be electric by the resin layer 5
Road floor 4 and metallic plate 6 engage.
In addition, the resin layer 5 has insulating properties.Thereby, it is possible to ensure the state of insulation of circuit layer 4 and metallic plate 6.
In addition, resin layer 5 is by hardening thing or solidfied material containing resin material and the resin combination of inorganic filling material
It constitutes, plays excellent thermal conductivity as a result,.As a result, the heat of circuit layer 4 (heater) side is transferred to metallic plate by resin layer 5
6。
The thermal conductivity of such resin layer 5 is suitable for using high thermal conductivity, specifically, it is preferable that being 1W/mK or more
15W/mK is hereinafter, more preferably 5W/mK or more 10W/mK or less.As a result, 4 side of circuit layer heat by resin layer 5 more
Expeditiously it is transferred to metallic plate 6.It is hot via circuit layer 4 and resin therefore, it is possible to be generated by the driving of heater
Layer 5 is expeditiously transferred to metallic plate 6, therefore can realize the raising of the radiating efficiency of the heat generated by heater.
The thickness (average thickness) of resin layer 5 is not particularly limited, such as preferably 50 μm~250 μm or so, more preferably
It is 80 μm~200 μm or so.Thereby, it is possible to the heat conduction of resin layer 5 is further increased while ensuring the insulating properties of resin layer 5
Property.In addition, by within the above range, can accurately inhibit or prevent from implementing to manufacture the thickness setting of resin layer 5
When the planarization processing that generated warpage is corrected when metallic substrates substrate 10, cracked in resin layer 5.
In addition, the glass transition temperature of resin layer 5 is preferably 50 DEG C or more 200 DEG C hereinafter, more preferably 70 DEG C or more
200 DEG C or less.The rigidity of resin layer 5 improves as a result, can accurately inhibit or prevent from implementing to manufacturing metallic substrates substrate
When the planarization processing that generated warpage is corrected when 10, cracked in resin layer 5.
In addition, the glass transition temperature of resin layer 5 can proceed as follows measurement according to JIS C 6481.
Using measurement of dynamic viscoelasticity device (DMA/983 of TA instruments (TA Instruments) company manufacture), in nitrogen
Gas atmosphere applies tensile load under (200ml/ minutes), frequency 1Hz with p- 50 DEG C of the condition of 5 DEG C/min of heating rate extremely
300 DEG C of temperature range is measured, and glass transition temperature Tg is obtained according to the peak position of tan8.
In addition, 25 DEG C of resin layer 5 elasticity modulus (storage modulus) E ' is preferably 3GPa or more 70GPa or less.As a result,
The rigidity of resin layer 5 improves, therefore, it is possible to more accurately inhibit or prevent implementing to being produced when manufacture metallic substrates substrate 10
When the planarization processing that raw warpage is corrected, cracked in resin layer 5.
In addition, above-mentioned storage modulus can be measured with measurement of dynamic viscoelasticity device, specifically, storage modulus E '
Be measured as to resin layer 5 apply tensile load and in frequency 1Hz with 5~10 DEG C/min of heating rate at -50 DEG C to 300 DEG C
The value of storage modulus when measurement, 25 DEG C.
Resin layer 5 with the function becomes using resin material to be dispersed with inorganic fill out in the layer that main material is constituted
Fill the composition of material (filler).
Resin material plays the function as the adhesive for making inorganic filling material be maintained in resin layer 5, inorganic fill
Material has the thermal conductivity higher than the thermal conductivity of resin material.By making resin layer 5 that there is this composition, resin layer 5 can be improved
Thermal conductivity.
Such resin layer 5 is made of solidfied material or hardening thing, and the solidfied material or hardening thing mainly contain resin by making
The resin combination of material and inorganic filling material is cured or hardened and is formed.That is, resin layer 5 is by resin combination to be shaped to
Stratiform and the hardening thing or solidfied material that are formed are constituted.
Hereinafter, being illustrated to the resin combination.
As described above, resin combination is mainly constituted comprising resin material and inorganic filling material.
It is not particularly limited as resin material, the various resin materials of thermoplastic resin, thermosetting resin can be used.
As thermoplastic resin, for example, the polyenes such as polyethylene, polypropylene, vinyl-vinyl acetate copolymer
Hydrocarbon, improved polyalkene, polyamide (example：Nylon 6, nylon 46, nylon66 fiber, nylon 610, nylon 612, nylon 11, nylon 12, Buddhist nun
Imperial 6-12, nylon 6-66), thermoplastic polyimide, liquid crystal polymers, polyphenylene oxide, polyphenylene sulfide, the poly- carbonic acid such as aromatic polyester
Ester, polymethyl methacrylate, polyethers, polyether-ether-ketone, polyetherimide, polyacetals, phenylethylene, polyolefins, polychlorostyrene second
Alkenes, polyurethanes, polyesters, polyamide-based, polybutadiene, trans-polyisoprene class, fluororubber, haloflex
Various thermoplastic elastomer (TPE)s such as class etc. or their based copolymer, mixture, polymer alloy etc., can use these
In a kind or two or more is used in mixed way.
On the other hand, as thermosetting resin, for example, phenoxy resin, epoxy resin, phenolic resin, urea tree
Fat, melmac, polyester (unsaturated polyester (UP)) resin, polyimide resin, silicone resin, polyurethane resin etc., can
It is used in mixed way using a kind in these or by two or more.
Wherein, as the resin material used in resin combination (resin layer formation resin combination), preferably make
With thermosetting resin, in addition, more preferably using phenoxy resin.By comprising thermosetting resin (especially phenoxy resin), due to
Viscosity rises, and mobility when compacting reduces, and in the thickness and thickness evenness for ensuring resin layer 5 and can inhibit the shape in gap
Forming resin layer 5 under state, therefore, it is possible to further improve the insulating reliability and thermal conductivity of resin layer 5.In addition, resin layer 5
It is improved with the adaptation and resin layer 5 of metallic plate 6 and the adaptation of circuit layer 4.Therefore, it is possible to accurately inhibit or prevent
When the planarization that generated warpage is corrected when implementing to manufacture metallic substrates substrate 10 is processed, in resin layer 5 and metal
Stripping is generated between plate 6 and between resin layer 5 and circuit layer 4.By their synergistic effect, gold can be further improved
Belong to basal substrate 10 and then the insulating reliability and thermal conductivity of circuit board.
As phenoxy resin, for example, the phenoxy resin with bisphenol backbone, the phenoxy resin with naphthalene skeleton,
Phenoxy resin with anthracene skeleton, the phenoxy resin etc. with biphenyl backbone.In addition, can also use has these a variety of skeletons
Structure phenoxy resin.
Wherein, it is preferable to use bisphenol A-type or the phenoxy resin of bisphenol-f type.Can also use has bisphenol A skeleton and bis-phenol
The phenoxy resin of both F skeletons.
The content of phenoxy resin is for example relative to 100 mass % of the total solid content of resin combination, preferably 1 mass %
The above 40 mass % hereinafter, more preferably 2 mass % or more, 20 mass % hereinafter, further preferably 4 mass % or more, 12 matter
Measure % or less.Content by making phenoxy resin is above-mentioned lower limiting value or more, can fully obtain the effect for reducing elasticity modulus,
Stress retentivity when being used in metallic substrates substrate 10 is excellent, can inhibit by heating/cooling drastically
Solder or its nearby crack.In addition, by making the content of phenoxy resin for above-mentioned upper limit value hereinafter, when can inhibit compacting
Mobility be deteriorated, generate gap etc., the insulating reliability of metallic substrates substrate 10 can be improved.
In addition, the weight average molecular weight of phenoxy resin is not particularly limited, preferably 4.0 × 104~4.9 × 104.As a result, can
The further low elastic modulus for enough realizing resin layer 5, can make the stress retentivity of metallic substrates substrate 10 excellent.For example,
When being equipped with the semiconductor device of semiconductor element using the manufacture of metallic substrates substrate 10, even if the semiconductor device is drastically
Heating/cooling environment under, also can more accurately inhibit or prevent by semiconductor element and circuit board engagement weldering
Connect joint portion or its nearby crack etc. it is bad.
In addition, resin material also includes epoxy resin preferably other than phenoxy resin.It, can by comprising epoxy resin
Heat resistance after the further moisture-proof for improving the resin layer 5 obtained by resin combination, heat resistance, especially moisture absorption.In addition,
Circuit layer 4 and metallic plate 6 can be securely engaged by resin layer 5.Therefore, the heat dissipation of obtained metallic substrates substrate 10
Property and excellent in te pins of durability.
As long as in addition, epoxy resin of the epoxy resin with 2 or more epoxy groups in 1 molecule, just no special
It does not limit, preferably comprises at least epoxy of any one in aromatic ring structure and alicyclic structure (carbocyclic ring structure of ester ring type)
Resin (A).By using such epoxy resin (A), glass transition temperature can be improved, and tree can be further increased
The thermal conductivity of lipid layer 5.In addition, adaptation of the resin layer 5 relative to circuit layer 4 and metallic plate 6 can be further increased.
In addition, as the epoxy resin (A) with aromatic rings or aliphatic ring structure, for example, bisphenol type epoxy
Resin, bisphenol f type epoxy resin, bisphenol-s epoxy resin, bisphenol E-type epoxy resin, bis-phenol M types epoxy resin, bis-phenol p-type
Bisphenol-type epoxy resins, phenol novolak type epoxy resin, the cresol novolaks such as epoxy resin, bisphenol Z type epoxy resin
The phenolic resin varnish type epoxy resins such as type epoxy resin, four phenolic group ethane type phenolic resin varnish type epoxy resins, biphenyl type epoxy resin,
The rings such as the aryl alkenes such as phenol aralkyl type epoxy resin with biphenylene skeleton type epoxy resin, naphthalene type epoxy resin
Oxygen resin etc. can use a kind in these or two or more is applied in combination.
In addition, according to the type (for example, the case where comprising epoxy resin) etc. of above-mentioned resin material, the resin combination
In may include curing agent as needed.
The amides curing agent such as it is not particularly limited, such as dicyandiamide, fatty polyamide can be enumerated as curing agent；
The amine type hardeners such as diaminodiphenyl-methane, methane phenylenediamine, ammonia, triethylamine, diethylamine；Bisphenol-A, Bisphenol F, phenol
The phenolic hardeners such as novolac resin, cresol novolac resin, paraxylene-novolac resin；Anhydride etc..
In addition, resin combination can also include hardening catalyst (hardening accelerator).Thereby, it is possible to improve resin combination
The hardenability of object.
As hardening catalyst, for example, the amines such as imidazoles, 1,8- diazabicyclos (5,4,0) endecatylene
Phosphor catalysts such as catalyst, triphenylphosphine etc..Wherein preferred imidazoles.As a result, more particularly to fully taking into account resin combination
Quick-hardening and keeping quality.
As imidazoles, for example, 1 benzyl 2 methyl imidazole, 1- benzyl -2- phenylimidazoles, 1- cyano second
Base -2-ethyl-4-methylimidazole, 2- phenyl -4-methylimidazole, 1- cyano ethyl -2- phenylimidazoles trimellitate, 2,4-
Diamino -6- [2 '-methylimidazolyls-(1 ')]-ethyl-s-triazine, 2,4- diamino -6- [2 '-undecyl imidazole bases -
(1 ')]-ethyl-s-triazine, 2,4- diamino -6- [the 2 '-methylimidazolyl of ethyl -4 '-(1 ')]-ethyl-s-triazine, 2,4- bis-
Amino -6- [2 '-methylimidazolyls-(1 ')]-ethyl-s-triazine isocyanuric acid adduct, 2- phenylimidazole isocyanuric acid additions
Object, 2- phenyl -4,5- bishydroxymethyls imidazoles, 2- phenyl -4- methyl -5- hydroxymethylimidazoles, 2,4- diamino -6- ethylene
Base-s- triazines, 2,4- diamino -6- vinyl-s- triazines isocyanuric acid adduct, 2,4- diamino -6- methacryloxypropyls
Base ethyl-s-triazine, 2,4- diamino -6- methacryloxyethyl-s- triazine isocyanuric acid adducts etc..Wherein preferably
2- phenyl -4,5- bishydroxymethyl imidazoles or 2- phenyl -4- methyl -5- hydroxymethylimidazoles.As a result, more particularly to improving resin
The keeping quality of composition.
In addition, the content of hardening catalyst is not particularly limited, relative to 100 mass parts of resin material, preferably 0.01
~30 mass parts or so, especially more preferably 0.5~10 mass parts or so.When the content is above-mentioned lower limiting value or more, resin
The hardenability of composition is more abundant, on the other hand, by make the content be above-mentioned upper limit value hereinafter, resin can be further increased
The keeping quality of composition.
In addition, resin combination preferably also includes coupling agent.Thereby, it is possible to further increase resin material relative to inorganic
The adaptation of packing material, metallic plate 6 and circuit layer 4.Therefore, it is possible to more accurately inhibit or prevent implementing to manufacturing metal
When the planarization processing that generated warpage is corrected when basal substrate 10, cracked in resin layer 5, and can be more
Accurately inhibit or prevent between resin layer 5 and metallic plate 6 and resin layer 5 and circuit layer 4 between generate stripping.
As the coupling agent, silane coupling agent, titanium class coupling agent, aluminium class coupling agent etc. can be enumerated.Wherein preferred silicon
Alkanes coupling agent.Thereby, it is possible to further increase the heat resistance of resin combination and thermal conductivity.
Wherein, as silane coupling agent, for example, vinyl trichlorosilane, vinyltrimethoxysilane,
Vinyltriethoxysilane, β-(3,4 expoxycyclohexyl) ethyl trimethoxy silane, γ-glycidoxypropyl group front three
Oxysilane, γ-glycidoxypropyl dimethoxysilane, γ-methacryloxypropyl trimethoxy silane,
γ-methacryloxypropyl methyl diethoxysilane, γ-methacryloxypropyl, N- β
(amino-ethyl) gamma-amino hydroxypropyl methyl dimethoxysilane, N- β (amino-ethyl) gamma-aminos propyl trimethoxy silicane, N-
β (amino-ethyl) γ aminopropyltriethoxy silane, gamma-amino propyl trimethoxy silicane, three ethoxy of gamma-amino propyl
Base silane, N- phenyl-gamma-amino propyl trimethoxy silicane, γ-r-chloropropyl trimethoxyl silane, γ-mercaptopropyi trimethoxy
Base silane, 3- isocyanate propyl triethoxysilanes, 3- acryloyloxypropyltrimethoxysilanes, bis- (3- triethoxies
Silylpropyl) tetrasulfide etc..
The content of coupling agent is not particularly limited, relative to 100 mass parts of resin material, preferably 0.01~10 mass parts
Left and right, especially more preferably 0.5~10 mass parts or so.It is as described above to improve when the content is above-mentioned lower limiting value or more
The effect of adaptation is more abundant, on the other hand, by making the content be that above-mentioned upper limit value to form tree hereinafter, can further suppress
Exhaust when lipid layer 5 or gap.
In addition, inorganic filling material included in resin combination is the filler being made of inorganic material.It is inorganic as a result,
Packing material plays the thermal conductivity higher than the thermal conductivity of resin material.Therefore, which is dispersed in resin combination
In, thereby, it is possible to improve the thermal conductivity of resin layer 5.
Be not particularly limited as inorganic material, for example, aluminium hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate,
Calcium silicates, calcium oxide, magnesia, aluminium oxide (alumina, Al2O3), aluminium nitride, aluminium borate whisker, boron nitride, crystalline silica
Silicon, amorphous silica, silicon carbide etc. can use a kind in these or two or more is applied in combination.
Wherein, such inorganic filling material is preferably by least one kind of coccoid constituted in aluminium oxide and aluminium nitride,
The coccoid being especially preferably mainly made of aluminium oxide.It is more excellent thereby, it is possible to be formed as thermal conductivity (thermal diffusivity) and insulating properties
Different inorganic filling material.In addition, it is excellent from the viewpoint of versatility, can inexpensively obtain, particularly preferably use aluminium oxide.
Therefore, the case where hereinafter, being the coccoid being mainly made of aluminium oxide with inorganic filling material be an example into
Row explanation.
The content of inorganic filling material is preferably 30 volume % or more, 70 bodies of resin combination whole (in addition to solvent)
% is hereinafter, more preferably 40 volume % or more, 60 volume % or less for product.By being improved in resin combination as the range
The containing ratio of inorganic filling material can make the thermal conductivity of resin layer 5 better.In addition, when can further suppress compacting
Mobility variation, generation gap etc..In addition, can more accurately inhibit or prevent when implementing to manufacture metallic substrates substrate 10
When the planarization processing that generated warpage is corrected, cracked in resin layer 5.
And when the content is less than above-mentioned lower limiting value, it is difficult to make resin layer 5 while ensuring the insulating properties of resin layer 5
Excellent thermal conductivity.On the other hand, when the content is more than above-mentioned upper limit value, according to the difference of the constituent material of resin combination,
There are following situations：The viscosity of resin combination becomes excessively high and is difficult to carry out the filtration of varnish or be shaped to stratiform (to apply
Layer) or the flowing of resin combination become too small and generate gap in obtained resin layer 5.
In addition, even if the containing ratio of the inorganic filling material in resin combination is highly set as above-mentioned range
It is fixed, it, will be in temperature 25 by using viscosity under conditions of 25 DEG C of temperature, shear velocity 1.0rpm is set as A [Pas]
DEG C, the viscosity under conditions of shear velocity 10.0rpm is when being set as B [Pas], meet A/B (thixotropic ratio) be 1.2 or more 3.0 with
Under relationship resin combination, the viscosity and stream of resin combination (varnish) can be also made when manufacturing metallic substrates substrate 10
Dynamic property is appropriate.
In addition, the water content of the inorganic filling material is preferably 0.10 mass % or more, 0.30 mass % hereinafter, more preferably
For 0.10 mass % or more, 0.25 mass % hereinafter, further preferably 0.12 mass % or more, 0.20 mass % or less.As a result,
Even if make inorganic filling material containing quantitative change it is more if can have more appropriate viscosity and mobility.Therefore, it is possible to prevent gained
To resin layer 5 in generate gap while formed excellent thermal conductivity resin layer 5.It is led with superior that is, can be formed
Hot and insulating properties resin layer 5.
In addition, aluminium oxide is usually obtained by calcinations of aluminum hydroxide.The coccoid of obtained aluminium oxide is by multiple one
Secondary particle is constituted, and the average grain diameter of the primary particle can be set according to the condition of the calcining.
In addition, the aluminium oxide for not carrying out any processing after the calcining is made of condensate (second particle), the condensate
It is agglomerated each other by fixation by primary particle.
Therefore, disintegrate the mutual cohesion of the primary particle as desired by crushing, this makes it possible to obtain final inorganic
Packing material.The average grain diameter of final inorganic filling material can be set according to the condition (such as time) of the crushing.
It is only mutual by disintegrating primary particle because aluminium oxide has high hardness when carrying out the crushing
Fixation, primary particle itself are hardly destroyed, and the average grain diameter of primary particle also substantially maintains after being pulverized.
Therefore, as grinding time is elongated, the average grain diameter of the average grain diameter of inorganic filling material close to primary particle.And
And when grinding time is more than the stipulated time, the average particle diameter became of inorganic filling material and the average grain diameter of primary particle
It is equal.That is, when shortening grinding time, inorganic filling material is mainly made of second particle, with keeping grinding time elongated, one
Secondary particle it is more containing quantitative change, when it is final to be more than the stipulated time when, be mainly made of primary particle.
In addition, for example, as described above by the primary particle of aluminium oxide obtained from calcinations of aluminum hydroxide be not it is spherical,
And in the flakey shape with flat surface like that.Therefore, it is possible to make the mutual contact area of inorganic filling material become larger.It is tied
Fruit can improve the thermal conductivity of obtained resin layer 5.
In addition, the average grain diameter D50 of the primary particle of inorganic filling material be preferably 1 μm or more 10 μm hereinafter, more preferably
It is 3 μm or more 7 μm or less.Thereby, it is possible to further increase the filling rate of inorganic filling material.Therefore, it is possible to make inorganic fill
Material (primary particle) mutual contact area further becomes larger, and can further improve the thermal conductivity of resin layer 5.
In addition, by using such inorganic filling material, resin layer 5 and circuit layer 4 and gold can be further improved
Belong to the adaptation of plate 6.
By their synergistic effect, it can further improve the insulating reliability of metallic substrates substrate 10 and heat dissipation can
By property.
In addition, resin combination other than above-mentioned ingredient, can also include the additives such as levelling agent, antifoaming agent.
In addition, resin combination is for example comprising methyl ethyl ketone, acetone, toluene, dimethylformaldehyde equal solvent.
In addition, such resin combination in varnish shape for example can be by as needed mixing resin material and solvent
Merging further mixes inorganic filling material and obtains after becoming varnish shape.
In addition, being not particularly limited as mixing machine used in mixing, for example, distributor, composite blading formula
Blender, ball mill and homogenizer etc..
In addition, when resin material has high thermal conductivity, it is convenient to omit add inorganic filling material into resin combination.
I.e., it is possible to which resin layer 5 is made to be the resin layer being mainly made of resin material that addition inorganic filling material is omitted.
Shape is in tabular (sheet), and the shape in a manner of the lower surface of overlay tree lipid layer 5 to metallic plate 6 when looking down
At.
Such metallic plate 6 is as generated warm in the driving by heater via circuit layer 4 and resin layer 5 from metal
The component (heat sink) of the lower face side heat dissipation of plate 6 (circuit board) functions.
Therefore, even if even if heater can be by the warm via metallic plate 6 if having issued temperature high heat by its driving
It radiates from its lower face side.Therefore, it is possible to accurately inhibit or prevent to heater itself and then to being mounted in circuit board
Other electronic units cause harmful effect.
In addition, the thickness (average thickness) as metallic plate 6 is not particularly limited, such as preferably 0.3mm or more, it is more excellent
It is selected as 0.5mm or more.In addition, the thickness (average thickness) as metallic plate 6, preferably 1.2mm is hereinafter, more preferably 1.0mm
Below.Thickness (average thickness) by making metallic plate 6 is the lower limiting value or more, can more accurately inhibit or prevent in resin
It is cracked in layer 5, by making the thickness (average thickness) of metallic plate 6 be the upper limit value hereinafter, cost can be reduced, and can
More economical space saving installed.
In the present invention, which is made of fine aluminium.
In addition, in the present specification, metallic plate 6 be made of fine aluminium refer in metallic plate 6 in addition to aluminium atom other are former
The content of son is the situation of 0wt% or more 1.5wt% or less, i.e., the purity of aluminium atom is 98.5wt% or more in metallic plate 6
The situation of 100wt% or less.
In addition, being not particularly limited as other atoms in addition to aluminium atom, for example, magnesium, calcium, oxygen and silicon
Deng.Even if these other atoms are included in as impurity in metallic plate 6, as long as its content is within the above range, it will be able to make
The Brinell hardness (according to the regulation of JIS Z 2243) of metallic plate 6 is in the range of 12HB or more 35HB or less.In addition, about making
The Brinell hardness of metallic plate 6 within the above range the reason of, will be described in detail in a later process.
In addition, the thermal conductivity of such metallic plate 6 is 200W/mK or so (aluminium), there is excellent thermal conductivity.
In addition, when constituting metallic plate 6 by fine aluminium and constituting circuit layer 4 by copper or copper series alloy, the thermal conductivity of circuit layer 4
Higher than the thermal conductivity of metallic plate 6.The heat that heater is sent out as a result, will not be to width in circuit layer 4 when being transferred to circuit layer 4
Range is spread, and reaches metallic plate 6 via resin layer 5 rapidly, reaches the heat of the metallic plate 6 while spread in metallic plate 6
It is released to the outside of metallic plate 6, therefore, it is possible to further increase radiating efficiency.
In the metallic substrates substrate 10 as described above including metallic plate 6, resin layer 5 and circuit layer 4, in the present invention
In, metallic plate 6 is constituted by fine aluminium.By using this composition, according to the research of the present inventor, it was found that when to metallic substrates substrate
10 implement the planarizations processing of correction warpage, and when placed 168 hours under the steam atmosphere of 121 DEG C/100%RH,
Breakdown voltage value is 3.6kV or more after capable of making the moisture absorption of resin layer 5, about its detailed description, it will recorded below
Metallic substrates substrate 10 manufacturing method in be described in detail.
Circuit layer 4 included by metallic substrates substrate 10 to this composition is patterned with defined pattern and forms electricity
Road, thus, it is possible to obtain circuit board (circuit board of the invention).In addition, by the way that heater (electronic unit) had
Connection terminal is electrically connected with the terminal being arranged by forming the circuit, can be obtained in circuit board equipped with heater
Heater mounted board (heater mounted board of the invention).
Such metallic substrates substrate 10 can for example be manufactured by the manufacturing method of metallic substrates substrate 10 as shown below.
<The manufacturing method of metallic substrates substrate>
Fig. 2 is the figure illustrated for the manufacturing method to metallic substrates substrate shown in FIG. 1, and Fig. 3 is for illustrating
The figure of the planarizer used when generated warpage planarizes when to manufacturing metallic substrates substrate shown in FIG. 1.
In addition, hereinafter, for convenience of explanation, the upside in Fig. 2, Fig. 3 being also referred to as "upper", downside is also referred to as "lower".In addition, by golden
Belong to basal substrate and its each portion to be turgidly schematically shown, but the size in metallic substrates substrate and its each portion and its
Ratio with actually differ widely.
[1]
First, prepare to be in flat circuit layer 4, then as shown in (a) of Fig. 2, form resin layer shape on circuit layer 4
At with layer 5A.
The resin layer formation with layer 5A be by by the above-mentioned resin combination in varnish shape supply on circuit layer 4 simultaneously
It becomes obtained from being dried after stratiform.Then, the resin layer formation with layer 5A by through aftermentioned process [2] into
Row hardening cures and becomes resin layer 5.
Supply of the resin combination to circuit layer 4, such as roll coater, bar coater, knife type coater, intaglio plate can be used to apply
Cloth machine, die coating machine, comma coating machine and curtain coater etc. carry out.Wherein, it is preferable to use die coating machine, knife type coater and funny
Number coating machine.It thereby, it is possible to higher efficiency forms tight and the resin layer formation layer 5A with uniform thickness is set in turn
Lipid layer 5.
The resin combination preferably has following viscosity behavior.
That is, using measurement of dynamic viscoelasticity device, by the resin combination from 60 DEG C with 3 DEG C/min of heating rate, frequency
When 1Hz is warming up to molten condition, preferably with melt viscosity in the early stage reduce, after reaching lowest melt viscosity further on
The characteristic risen, and lowest melt viscosity is 1 × 103Pas or more 1 × 105In the range of Pas or less.
When lowest melt viscosity is above-mentioned lower limiting value or more, resin material and inorganic filling material can be further suppressed
Separation and only resin material flow the case where, by the way that resin layer 5 evenly through process [2], can be obtained.In addition, ought be most
When low melting viscosity is above-mentioned upper limit value or less, resin combination can be further increased to the wellability of circuit layer 4, Neng Gougeng
Further increase the adaptation of resin layer 5 and circuit layer 4.
By their synergistic effect, can further improve metallic substrates substrate 10 (circuit board) thermal diffusivity and
Breakdown voltage.
In addition, resin combination reaches the temperature of lowest melt viscosity preferably in 60 DEG C or more 100 DEG C or less of range,
More preferably in 75 DEG C or more 90 DEG C or less of range.
In addition, the turnover rate of resin combination is preferably 15% less than 60%, more preferably 25% or more and small
In 50%.
In addition, the turnover rate can be measured by following step.That is, first, it will be with by present embodiment
The metal foil for the resin layer that resin combination is formed is laminated 5~7 after being cut into defined size (50mm × 50mm), and surveys
Its fixed weight.Then, it cools down after being suppressed between the hot plate that internal temperature is remained to 175 DEG C 5 minutes, carefully does
The resin for falling outflow, measures weight again.Turnover rate can be found out by lower formula (I).
Turnover rate (%)=(weight after weight-measurement before measuring)/(weight-metal foil weight before measuring) (I)
It, can be into one when resin combination heat hardening is formed resin layer 5 when with such viscosity behavior
Step inhibits in air intrusion resin combination, and the gas that can be dissolved in resin combination is fully expelled to outside.
As a result, it is possible to further suppress to generate bubble in resin layer 5, reliably heat can be transmitted from circuit layer 4 to resin layer 5.
In addition, the generation by further suppressing bubble, can improve the insulating reliability of metallic substrates substrate 10 (circuit board).Separately
Outside, the adaptation of resin layer 5 and circuit layer 4 can be improved.
By their synergistic effect, the thermal diffusivity of metallic substrates substrate 10 (circuit board) can be further improved,
As a result, it is possible to further improve the thermal cycle characteristic of the circuit board obtained by metallic substrates substrate 10.
Resin combination with such viscosity behavior for example can be by suitably adjusting the type of above-mentioned resin material
Or amount, inorganic filling material type or amount, and in resin material include phenoxy resin when suitably adjust its type or amount
And it obtains.
[2]
Then, prepare metallic plate 6, then as shown in (b) of Fig. 2, formed across resin layer with circuit layer 4 and metallic plate 6
It is pressurizeed and is heated with layer 5A modes close to each other.
Metallic plate 6 is fitted on resin layer formation layer 5A (with reference to (c) of figure 2) as a result,.
At this point, shown with layer 5A in resin layer formation it is heat cured, resin layer formation with layer 5A hardening and
Resin layer formation is heated and pressurizeed with layer 5A under conditions of formation resin layer 5.In addition, aobvious with layer 5A in resin layer formation
Show it is thermoplastic in the case of, carried out by cooling and cured under the conditions of after being melted in heating and by heating heating and
Pressurization.
The condition being heated and pressurizeed is for example according to the type of resin combination included in resin layer formation layer 5A
And it is slightly different, it can set as described below.
That is, heating temperature is preferably set to 80~200 DEG C or so, more preferably it is set as 170~190 DEG C or so.
In addition, the pressure of pressurization is preferably set to 0.1~3MPa or so, more preferably it is set as 0.5~2MPa or so.
In addition, the time being heated and pressurizeed is preferably 10~90 minutes or so, more preferably 30~60 minutes or so.
The lower surface of metallic plate 6 and resin layer are formed as a result, engages with layer 5A, and resin layer formation layer 5A harden and
Resin layer 5 is formed, as a result, obtaining the metallic substrates substrate 10 for being fitted with metallic plate 6 on resin layer 5.
Additionally, it is preferred that before resin layer formation is bonded with layer 5A with metallic plate 6, to the joint surface of metallic plate 6 implement with
50 DEG C~80 DEG C of water contacts surface treatment in 0.5 minute~3 minutes etc..Thereby, it is possible to further increase resin layer 5 and metal
The adaptation of plate 6.
Here, when being cooled down to obtained metallic substrates substrate 10, due to metallic plate 6, resin layer 5 and circuit layer
Respective coefficient of thermal expansion is different in 4, and as shown in (d) of Fig. 6, metallic substrates substrate 10 will produce warpage.Therefore, it is necessary to implement to rectify
The just planarization processing of the warpage.Hereinafter, being illustrated to planarization processing.
[3]
Then, which is corrected to the metallic substrates substrate 10 for producing warpage and metallic substrates substrate 10 is made to planarize
(planarization processing).
Obtain the metallic substrates substrate 10 that warpage is eliminated and realizes planarization as a result, (with reference to (e) of figure 2).
Planarization to the metallic substrates substrate 10 for producing warpage, such as planarizer shown in Fig. 3 can be used
100 carry out.
Planarizer 100 includes：Load the seamless-band 150 of metallic substrates substrate 10；With the conveying of conveying seamless-band 150
Mechanism 200.
Conveying mechanism 200 has stretcher (jockey pulley) 211,212,213,251,252,253,254.
As shown in figure 3, in conveying mechanism 200, be equipped on stretcher 211,212,213,251,252,253,254 from
It is seamless by the rotation of stretcher 211,212,213,251,252,253,254 in circular seamless-band 150 when side is seen
Band 150 is sent out repeatedly along conveying direction.
In addition, about stretcher 211,212,213,251,252,253,254, outer shape difference is cylindrical, such as
It is made of stainless steel and other metal materials.In addition, these stretchers 211,212,213,251,252,253,254 rotation axis (in
Mandrel) identical towards each other direction, and it is separated from each other interval configuration.In addition, these stretchers 211,212,213,251,
252, it 253,254 is for example rotatably supported on the frame (not shown) for supporting entire planarizer 100.
Stretcher 251~254 in each stretcher by the roller that is rotated while being wound seamless-band 150 contacted,
By the position change conveying direction in the corner as the seamless-band 150 installed, seamless-band 150 is sent repeatedly with ring-type
Go out.
In addition, stretcher 211~213 configures in order between stretcher 251 and stretcher 252, be wound on one side with
Mode between insertion stretcher 211 and stretcher 212 and then between insertion stretcher 212 and stretcher 213 contacts seamless
The roller rotated on one side with 150.
In these stretchers 211~213, stretcher 211 and stretcher 213 are matched in such a way that its center is along conveying direction
Set, stretcher 212 with its center relative to the center of stretcher 211 and stretcher 213 on the direction orthogonal with conveying direction
The mode being staggered configures.
Seamless-band 150 is transported between the stretcher 211~213 being arranged in this way, although conveying direction is changed at this time,
But when to seamless-band 150 is conveyed between stretcher 211~213, the gold of warpage is produced by being loaded on seamless-band 150
Belong to basal substrate 10, which is corrected, as a result, metallic substrates substrate 10 is flattened.
The diameter of stretcher 211~213 is preferably 2cm or more 20cm hereinafter, more preferably 7Gm or more 13cm or less.
In addition, the spacing distance L of stretcher 211 and stretcher 2121And the interval distance of stretcher 212 and stretcher 213
From L2It is preferably separately 20cm or more 80cm hereinafter, more preferably 40cm or more 60m or less.
In addition, at stretcher 211~213 from conveying direction, on the direction orthogonal with conveying direction, stretcher
211, the length L in 213 regions Chong Die with stretcher 2123Preferably 2cm or more 8cm hereinafter, more preferably 4cm or more 6m with
Under.
By the way that the settings such as the size of stretcher 211~213 within the above range, can more reliably be corrected metallic substrates
The warpage generated on substrate 10.
In addition, motor (not shown) is connected at least one stretcher among stretcher 211~213, by this
The start of motor conveys seamless-band 150.In addition, can be changed by changing the size of the voltage applied to these motor
Become the conveying speed of seamless-band 150.
In addition, the metallic substrates substrate 10 for having corrected warpage utilizes the metal that settled process measures specified in JIS C 6481
The warpage of plate 6 is preferably 0.2% hereinafter, more preferably 0.1% or less.When warpage in the range when, it may be said that metal
Generated warpage is corrected on basal substrate 10, realizes planarization.
In this way, including metallic plate need implementation planarization processing (planarization process) due to warpage as generation
6, in the metallic substrates substrate 10 of resin layer 5 and circuit layer 4, in the present invention, metallic plate 6 is constituted by fine aluminium.
By using this composition, it is found that by shown in (d) from the Fig. 2 for producing warpage according to the research of the present inventor
State implement planarization processing, that is, become warpage and be corrected and realize state shown in (e) of Fig. 2 of planarization,
It is small that the metallic substrates substrate 10 for implementing planarization processing placed 168 under the steam atmosphere of 121 DEG C/100%RH
Constantly, breakdown voltage value is 3.6kV or more after capable of also making the moisture absorption of resin layer 5, so as to complete the present invention.
In this way, in metallic substrates substrate 10, by making metallic plate 6 be made of fine aluminium, even if (d) to such as Fig. 2 is shown
The metallic substrates substrate 10 for producing warpage like that implements state (the planarization shape for planarizing and being process to have corrected warpage
State), it also can accurately inhibit or prevent from cracking in the resin layer 5 for realizing planarization.Therefore, even if by Metal Substrate
Substrate 10 is placed 168 hours under the steam atmosphere of 121 DEG C/100%RH, also can accurately inhibit or prevent above-mentioned water
The breakdown voltage value of resin layer 5 under vapor atmosphere changes, to ensure metallic plate 6 and circuit using resin layer 5
The insulating properties of layer 4.That is, resin layer 5 when can make to placed under the steam atmosphere of 121 DEG C/100%RH 168 hours
Breakdown voltage value is 3.6kV or more.
In addition, it is assumed that even if the metallic substrates substrate 10 for producing warpage is made to become the planarization for realizing planarization
State, it is 3.6kV or more that can also make the breakdown voltage value of the resin layer 5 under above-mentioned steam atmosphere, is due to such as golden
The Brinell hardness (according to the regulation of JI S Z 2243) for belonging to plate 6 is such in the range of 12HB or more 35HB or less, metallic plate 6
It is excellent in terms of flexibility.By making the Brinell hardness of metallic plate 6 in the range, metallic plate 6 is played as mitigating to warpage
The function of the padded coaming of generated stress when being corrected, as a result, it is believed that can accurately inhibit or prevent resin
The generation of crackle in layer 5.
In addition, as long as the breakdown voltage value of the resin layer 5 under above-mentioned steam atmosphere under flattened condition is
3.6kV or more, preferably 5.0kV or more.Thus, it is possible to say even if making the metallic substrates substrate 10 for producing warpage become
The flattened condition of planarization is realized, the variation of the breakdown voltage value of resin layer 5 is also more accurately suppressed or prevents.
In addition, the Brinell hardness of metallic plate 6 is preferably 12HB or more, more preferably 15HB or more.In addition, metallic plate 6
Brinell hardness is preferably 35HB hereinafter, more preferably 30HB or less.By make metallic plate 6 Brinell hardness be the lower limiting value with
On, sheet reduced in burr formation when operability and the cutting of substrate can be further increased, by making the Brinell hardness of metallic plate 6 be on this
Limit value is hereinafter, can more accurately inhibit or prevent from cracking in resin layer 5.
In addition, when the Brinell hardness of metallic plate 6 is set as H [HB], the thickness (average thickness) of metallic plate 6 is set as T
When [mm], the relationship H/T of Brinell hardness H and thickness T preferably satisfies the relationship of H/T ＜ 150, more preferably meets 30 ＜ H/T ＜
60 relationship.Thereby, it is possible to further suppress or prevent the generation of the crackle in resin layer 5.
In addition, the breakdown voltage value about resin layer 5, can pass through the steam atmosphere in 121 DEG C/100%RH
After lower placement 168 hours, apply alternating voltage between copper foil and aluminium sheet to be at room temperature measured.
In addition, the Brinell hardness about metallic plate 6, can apply according to the steel balls of diameter 10mm of JIS Z 2243
The pressure of 3000kgf measures the area for the permanent pit for remaining on metallic plate 6 to find out after 30 seconds.
Process more than can manufacture metallic substrates substrate 10.
In addition, by the circuit layer 4 having to the metallic substrates substrate 10 patterns formed with and fever
The circuit of the terminal for the connection terminal electrical connection that body has, so as to manufacture the circuit for being formed with circuit on resin layer 5
Substrate.
In addition, being not particularly limited as patterned method is carried out to circuit layer 4, for example, in circuit layer 4
It is upper to be formed after resist layer corresponding with pattern (shape) of circuit to be formed, which is used as mask, is passed through
The method etc. that wet etching or dry etching method are etched the circuit layer 4 exposed from the opening portion of resist layer.
In addition, passing through the connection terminal for having heater (electronic unit) and the end being arranged by forming the circuit
Son electrical connection, can obtain the heater mounted board equipped with heater in circuit board.The heater mounted board is made
The substrate (component) that is had by various electronic equipments and carried.
In addition, heater mounted board can for example be received by the other structures body having mounted on electronic equipment
It is contained in shell possessed by electronic equipment, 6 side of metallic plate can also be had facing towards outside and as electronic equipment
Shell a part and mounted on constitute shell other component (other structures body) on.
More than, about metallic substrates substrate, circuit board and the heater mounted board of the present invention, to the embodiment party of diagram
Formula is illustrated, but the present invention is not limited to these.
For example, each portion for constituting the metallic substrates substrate of the present invention, circuit board and heater mounted board can be with energy
The part for enough playing the arbitrary structures of identical function is replaced.Alternatively, it is also possible to be attached with arbitrary works.
In addition, the heater mounted board heater mounted as the present invention, can enumerate semiconductor device, temperature-sensitive
Power crystal as resistance as resistance, capacitor, diode power MOSFET, insulated gate bipolar transistor (IGBT)
Light-emitting component and motor etc. as pipe, reactor, LD (laser diode), organic EL element, heater of the invention are taken
Carried base board can be applied to carry at least one kind of substrate among these.
Embodiment
Hereinafter, being illustrated to specific embodiments of the present invention.In addition, the present invention is not limited to this.
1. the preparation of raw material
First, the raw material used in the resin combination of each embodiment described below and each comparative example.
In addition, being recorded as long as no special, the use level of each ingredient is mass parts.
(thermosetting resin 1)
As thermosetting resin 1, bisphenol A-type phenoxy resin (Mitsubishi chemical Co., Ltd (Mitsubishi is prepared
Chemical Corporation) manufacture：“1255”).
(thermosetting resin 2)
As thermosetting resin 2, having prepared bisphenol A type epoxy resin, (Dainippon Ink Chemicals (DIC Corporation) makes
It makes：“850S”).
(curing agent 1)
As curing agent 1, dicyandiamide (manufacture of Degussa (Degussa) company) is prepared.
(hardening accelerator 1)
As hardening accelerator 1, having prepared 2- phenylimidazoles, (four countries are melted into Co., Ltd. (SH IKOKU CHEMICALS
CORPORATION it) manufactures：“2PZ”).
(silane coupling agent 1)
As silane coupling agent 1, γ-glycidoxypropyltrime,hoxysilane (SHIN-ETSU HANTOTAI's chemical industry strain formula is prepared
Commercial firm (Shin-Etsu Chemical Co., Ltd.s) manufactures：“KBM-403”).
(inorganic filling material 1)
As inorganic filling material 1, aluminium oxide (Nippon Light Metal Co., Ltd (Nip pon Light Metal are prepared
Co., Ltd.) manufacture：“LS-210B”).
(inorganic filling material 2)
As inorganic filling material 2, boron nitride (Deuki Kagaku Kogyo Co., Ltd (Denki Kagaku are prepared
Kogyo Co., Ltd.s) manufacture：“SPG-3”).
(metallic plate 1)
As metallic plate 1, having prepared 6000 system of aluminium, (Nippon Light Metal Co., Ltd manufactures：" A6061-T6 ", average thickness
Degree：0.5mm).In addition, the purity of aluminium is 97.2wt%, Brinell hardness 105HB in the metallic plate 1.
(metallic plate 2)
As metallic plate 2, having prepared 5000 system of aluminium, (Nippon Light Metal Co., Ltd manufactures：" A5052-H34 ", average thickness
Degree：0.5mm).In addition, the purity of aluminium is 97.2wt%, Brinell hardness 82HB in the metallic plate 2.
(metallic plate 3-1)
As metallic plate 3-1, having prepared 1000 system of aluminium, (Nippon Light Metal Co., Ltd manufactures：" A1050-H24 ", it is average
Thickness：0.3mm).In addition, the purity of aluminium is 99.5wt%, Brinell hardness 30HB in metallic plate 3-1.
(metallic plate 3-2)
As metallic plate 3-2, having prepared 1000 system of aluminium, (Nippon Light Metal Co., Ltd manufactures：" A1050-H24 ", it is average
Thickness：0.5mm).In addition, the purity of aluminium is 99.5wt%, Brinell hardness 30HB in metallic plate 3-2.
(metallic plate 3-3)
As metallic plate 3-3, having prepared 1000 system of aluminium, (Nippon Light Metal Co., Ltd manufactures：" A1050-H24 ", it is average
Thickness：1.0mm).In addition, the purity of aluminium is 99.5wt%, Brinell hardness 30HB in metallic plate 3-3.
(metallic plate 4)
As metallic plate 4, having prepared 1080 system of aluminium, (Nippon Light Metal Co., Ltd manufactures：" A1080-H12 ", average thickness
Degree：0.5mm).In addition, the purity of aluminium is 99.8wt%, Brinell hardness 19HB in the metallic plate 4.
(circuit layer 1)
As circuit layer 1, having prepared web-like copper foil, (Nippon Denkai, Ltd. (Nippon D enkai, Ltd.) manufactures：
“YGP-35”)。
2. the manufacture of metallic substrates substrate
Produce metallic substrates substrate as described below.
(embodiment 1)
<The preparation of resin combination (varnish)>
As thermosetting resin, curing agent, hardening accelerator, silane coupling agent and inorganic filling material, respectively with 1 institute of table
The mass parts shown weigh substance shown in table 1, they are dissolved and is blended in 400 mass parts of cyclohexanone, high-speed stirred is used
Device is stirred, and thus prepares resin combination (resin varnish).
<Resin layer formation layer is formed on circuit layer>
The circuit layer 1 prepared is the size of width 260mm, 35 μm of thickness, using comma coating machine in the circuit layer 1
Be coated with previously prepared resin combination on rough surface, and in 100 DEG C of heat dryings 3 minutes, in 150 DEG C of heat dryings 3 minutes,
Thus the resin layer formation layer of 100 μm of thickness is formd on circuit layer.
In addition, by making resin combination dry under these conditions, resin layer formation becomes semi-harden state with layer.
It is cut to vertical 65mm × horizontal 100mm.
<The bonding metal plates on resin layer (resin layer formation layer)>
Prepared metallic plate 3 is loaded on the resin layer formation layer for be formed with the circuit layer 1 of resin layer formation layer,
In this state by circuit layer 1 and metallic plate 3 across resin layer formation it is close to each other with layer in a manner of pressurize and heat, to
So that resin layer formation is hardened with layer, results in embodiment 1 made of circuit layer 1, resin layer and metallic plate 3 stack gradually
Metallic substrates substrate.
In addition, condition when resin layer formation being made to be hardened with layer is set as described below.
Heating temperature：200℃
Pressure when pressurization：10MPa
The heat/pressure time：1.5 hour
(embodiment 2~8, comparative example 1~4)
It is even as used thermosetting resin, curing agent, hardening accelerator, silane when preparing resin combination (varnish)
Join agent and inorganic filling material, use substance shown in table 1 respectively, and they are weighed with mass parts shown in table 1, except this with
Outside, the metallic substrates substrate of embodiment 2~8 and comparative example 1~4 has been obtained in a manner of identical with above-described embodiment 1.
2. the evaluation of metallic substrates substrate
First, by obtained metallic substrates substrate in each embodiment and each comparative example respectively 121 DEG C/100%RH's
After being placed 168 hours under steam atmosphere, the breakdown voltage value of resin layer is determined.That is, each embodiment and each comparison
Obtained metallic substrates substrate is respectively the substrate for producing warpage in example, in the state that the correction of the warpage is not carried out,
Determine breakdown voltage value (the preceding insulation breakdown of warpage correction in the insulating layer under above-mentioned steam atmosphere after exposure
Voltage value).
Then, prepare in, each embodiment different from the above-mentioned substrate of breakdown voltage value is determined and each comparative example
Obtained metallic substrates substrate implements correction substrate base using planarizer 100 to these metallic substrates substrates respectively
The planarization of warpage caused by plate is processed.In addition, the planarization processing using planarizer 100 is to use spacing distance L1
=50cm, spacing distance L2=50cm, length L3=5cm, stretcher diameter=10cm planarizer carry out.In addition,
It is processed by implementing the planarization, in each embodiment and each comparative example in obtained metallic substrates substrate, metallic substrates substrate
The warpage for the metallic plate being had is 0.2% or less (according to the regulation of JIS C 6481).
Then, for corrected warpage each embodiment and each comparative example in obtained metallic substrates substrate, exist respectively
After being placed 168 hours under the steam atmosphere of 121 DEG C/100%RH, the breakdown voltage value (warpage of resin layer is determined
Breakdown voltage value after correction).
In addition, the breakdown voltage value of resin layer by room temperature between copper foil and aluminium sheet apply alternating voltage come
It measures.
It the results are shown in table 1.
Be clear that by table 1, pass through each embodiment, that is, as metallic plate, using fine aluminium metallic plate i.e. except aluminium atom with
The content of other outer atoms is 0wt or more 1.5wt metallic plates below, even if in the planarization processing for implementing correction warpage
Later, the breakdown voltage value of resin layer is also 3.6kV or more, shows and prevents due to implementing planarization processing in resin
The result cracked in layer.
And in each comparative example, as metallic plate, using the metallic plate of aluminium alloy, implement the flat of correction warpage as a result,
The breakdown voltage value for changing the resin layer after processing is shown less than 3.6kV, has obtained showing because implementation planarization adds
Work and the result that crackle is produced in resin layer.
Industrial availability
The present invention is a kind of metallic substrates substrate, is used to form electrical connection and carries the circuit base of the heater of fever
Plate, the metallic substrates substrate include：The metallic plate constituted in tabular and by fine aluminium；The shape on a face of the metallic plate
At resin layer；Exist with the feature of the circuit layer formed on one face of the resin layer, the metallic substrates substrate
In：When the planarization processing for implementing correction warpage to the metallic substrates substrate, and in the steam atmosphere of 121 DEG C/100%RH
Under when placed 168 hours, breakdown voltage value is 3.6kV or more after the moisture absorption of the resin layer.Thus, it is possible to provide a kind of
It can manufacture even if the circuit base that implements planarization processing for the purpose of eliminating warpage and can also ensure that internal insulating properties
The metallic substrates substrate of plate, using the circuit board of the metallic substrates substrate manufacture and in the circuit board equipped with heater
Heater mounted board.Therefore, the present invention has industrial availability.
Symbol description
4 circuit layers
5 resin layers
5A resin layer formation layers
6 metallic plates
10 metallic substrates substrates
100 planarizers
150 seamless-bands
200 conveying mechanisms
211 stretchers
212 stretchers
213 stretchers
251 stretchers
252 stretchers
253 stretchers
254 stretchers
Claims (11)
1. a kind of metallic substrates substrate is used to form electrical connection and carries the circuit board of the heater of fever, the metal
Basal substrate includes：
The metallic plate constituted in tabular and by fine aluminium；
The resin layer formed on a face of the metallic plate；With
The circuit layer formed on one face of the resin layer,
The metallic substrates substrate is characterized in that：
When the planarization processing for implementing correction warpage to the metallic substrates substrate, and in the vapor gas of 121 DEG C/100%RH
When placed 168 hours under atmosphere,
Breakdown voltage value is 3.6kV or more after the moisture absorption of the resin layer.
2. metallic substrates substrate according to claim 1, it is characterised in that：
The warpage for the metallic plate that the metallic substrates substrate is determined using settled process specified in JIS C 6481 is
0.2% or less.
3. metallic substrates substrate according to claim 1 or 2, it is characterised in that：
The average thickness of the metallic plate is 0.3mm or more 1.2mm or less.
4. metallic substrates substrate according to any one of claim 1 to 3, it is characterised in that：
The Brinell hardness of the metallic plate is 12HB or more 35HB or less.
5. metallic substrates substrate according to any one of claim 1 to 4, it is characterised in that：
The content of other atoms in the metallic plate in addition to aluminium atom is 0wt% or more 1.5wt% or less.
6. metallic substrates substrate according to any one of claim 1 to 5, it is characterised in that：
The circuit layer is made of copper or copper series alloy.
7. metallic substrates substrate according to any one of claim 1 to 6, it is characterised in that：
The resin layer is made of the hardening thing containing resin material and the resin combination of inorganic filling material or solidfied material.
8. metallic substrates substrate according to claim 7, it is characterised in that：
The resin combination also contains coupling agent.
9. metallic substrates substrate according to claim 7 or 8, it is characterised in that：
The inorganic filling material is the coccoid being mainly made of aluminium oxide.
10. a kind of circuit board, for the circuit formed using the metallic substrates substrate described in any one of claim 1 to 9
Substrate, it is characterised in that：
The circuit board passes through with the circuit for including the terminal for being electrically connected the heater, the circuit to the circuit layer
It is patterned and is formed.
11. a kind of heater mounted board, which is characterized in that including：
Circuit board according to any one of claims 10；It is electrically connected, and is mounted in described in the circuit board with the terminal
Heater.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015228060 | 2015-11-20 | ||
| JP2015-228060 | 2015-11-20 | ||
| PCT/JP2016/084360 WO2017086474A1 (en) | 2015-11-20 | 2016-11-18 | Metal base substrate, circuit board, and substrate with heat-generating body mounted thereon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108293297A true CN108293297A (en) | 2018-07-17 |
Family
ID=58719052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680068022.9A Pending CN108293297A (en) | 2015-11-20 | 2016-11-18 | Metallic substrates substrate, circuit board and heater mounted board |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6451867B2 (en) |
| CN (1) | CN108293297A (en) |
| WO (1) | WO2017086474A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114107923A (en) * | 2021-11-02 | 2022-03-01 | 西北工业大学 | Metal-based thin film heat flow micro-sensor and preparation method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7524581B2 (en) | 2020-03-31 | 2024-07-30 | 三菱マテリアル株式会社 | Copper-based PCB |
| JP7559910B2 (en) | 2022-12-22 | 2024-10-02 | 味の素株式会社 | Circuit board manufacturing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06206293A (en) * | 1993-01-11 | 1994-07-26 | Hitachi Chem Co Ltd | Warpage and twist correcting apparatus |
| CN101084250A (en) * | 2004-12-21 | 2007-12-05 | 三井化学株式会社 | Modified phenolic resin, epoxy resin composition containing the same, and prepreg containing the composition |
| CN201766771U (en) * | 2010-05-14 | 2011-03-16 | 深圳市博敏电子有限公司 | Rapid vehicle device for levelling warpage of printed circuit board |
| CN102947390A (en) * | 2010-06-22 | 2013-02-27 | 住友电木株式会社 | Resin composition used to form resin layer of metal base substrate, metal base substrate, and method for producing metal base substrate |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6451692A (en) * | 1987-08-24 | 1989-02-27 | Matsushita Electric Works Ltd | Warp correction working method for metal base printed circuit board |
| JPH02129989A (en) * | 1988-11-09 | 1990-05-18 | Mitsubishi Electric Corp | Metal base substrate with compound insulating layer |
| JP3418617B2 (en) * | 2000-09-22 | 2003-06-23 | 松下電器産業株式会社 | Heat conductive substrate and semiconductor module using the same |
| JP2014076555A (en) * | 2012-10-09 | 2014-05-01 | Sumitomo Chemical Co Ltd | Method of manufacturing metal laminate |
-
2016
- 2016-11-18 CN CN201680068022.9A patent/CN108293297A/en active Pending
- 2016-11-18 JP JP2017551965A patent/JP6451867B2/en active Active
- 2016-11-18 WO PCT/JP2016/084360 patent/WO2017086474A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06206293A (en) * | 1993-01-11 | 1994-07-26 | Hitachi Chem Co Ltd | Warpage and twist correcting apparatus |
| CN101084250A (en) * | 2004-12-21 | 2007-12-05 | 三井化学株式会社 | Modified phenolic resin, epoxy resin composition containing the same, and prepreg containing the composition |
| CN201766771U (en) * | 2010-05-14 | 2011-03-16 | 深圳市博敏电子有限公司 | Rapid vehicle device for levelling warpage of printed circuit board |
| CN102947390A (en) * | 2010-06-22 | 2013-02-27 | 住友电木株式会社 | Resin composition used to form resin layer of metal base substrate, metal base substrate, and method for producing metal base substrate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114107923A (en) * | 2021-11-02 | 2022-03-01 | 西北工业大学 | Metal-based thin film heat flow micro-sensor and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017086474A1 (en) | 2017-05-26 |
| JPWO2017086474A1 (en) | 2018-08-02 |
| JP6451867B2 (en) | 2019-01-16 |
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