CN108281497A - InSb quantum trap infrared detectors and preparation method - Google Patents

InSb quantum trap infrared detectors and preparation method Download PDF

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CN108281497A
CN108281497A CN201810051860.6A CN201810051860A CN108281497A CN 108281497 A CN108281497 A CN 108281497A CN 201810051860 A CN201810051860 A CN 201810051860A CN 108281497 A CN108281497 A CN 108281497A
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layer
growth
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董海云
张杨
曾平
曾一平
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Institute of Semiconductors of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A kind of InSb quantum trap infrared detectors structure comprising：One substrate；One compound buffer layer, growth is on substrate；Ohmic contact layer under one InSb, growth is on compound buffer layer；One InSb/InAlSb superlattice quantum well layers, growth is at InSb on ohmic contact layer；One AlGaSb electronic barrier layers, growth is on InSb/InAlSb superlattice quantum well layers；Ohmic contact layer on one InSb, growth is on AlGaSb electronic barrier layers.The present invention can reduce noise current when dark current and work under reversed bias voltage, improve the detectivity and maximum operating temperature of detector.

Description

InSb quantum trap infrared detectors and preparation method
Technical field
The invention belongs to technical field of semiconductors, refer in particular to be based on InSb quantum trap infrared detectors structure and preparation side Method.
Technical background
Infrared detector includes mercury cadmium telluride (TeCrHg), bodies material infrared detector and the quantum such as indium antimonide (InSb) The two-dimensional structures material infrared detector such as point, Quantum Well, superlattices has in detection air, military affairs, civilian and medicine etc. It is widely applied.Quantum trap infrared detector is more easy to obtain high response speed and detection compared to the detector of other structures Rate can be grown by the output characteristics of quantum well structure parameter optimizing detector, and using advanced technologies such as MBE Go out high-quality, large area and uniform quantum-well materials, in recent years, quantum well detector has obtained rapidly in terms of long wave applications Development.
Indium antimonide (InSb) is that energy gap is minimum in binary antimonide semi-conducting material, and energy gap is 0.17eV, and antimonide semiconductor has the advantageous properties such as high electron mobility, high electron saturation velocities, therefore InSb is red in There is good application in external detector field.Compared to traditional TeGrHg materials, the infrared detector of InSb material preparations has Better mechanical property, higher operating temperature, wider substrate material, more easily growth course.By InSb materials with Quantum well structure, which combines, to be made InSb quantum trap infrared detectors and can give full play to the excellent electrical properties of InSb materials, Speed meet with a response faster, the higher detecting devices of detection accuracy.
Invention content
The object of the present invention is to provide a kind of InSb quantum trap infrared detectors structure and preparation method thereof, this structure and sides Method uses substrate materials of the Si as extension so that the infrared detector device for making large area array is possibly realized.It is given birth to MBE methods Long InSb well layer and InAlSb barrier layer, by control potential well layer thickness and barrier layer aluminium component control trap in band structure it is wide and Height is built, to obtain 10 μm of wider response wave lengths of range above, one layer of electronic barrier layer, drop are grown above quantum well absorption layer Noise current when dark current under low reversed bias voltage and work, improves the detectivity and maximum operating temperature of detector.
The present invention provides a kind of InSb quantum trap infrared detectors structure comprising：
One substrate；
One compound buffer layer, growth is on substrate；
Ohmic contact layer under one InSb, growth is on compound buffer layer；
One InSb/InAlSb superlattice quantum well layers, growth is at InSb on ohmic contact layer；
One AlGaSb electronic barrier layers, growth is on InSb/InAlSb superlattice quantum well layers；
Ohmic contact layer on one InSb, growth is on AlGaSb electronic barrier layers.
The present invention also provides a kind of preparation sides preparing InSb quantum trap infrared detectors structure described in claim 1 Method includes the following steps：
Step 1：Substrate is selected, the substrate is the Si with the big mismatch of epitaxial material；
Step 2：Ohmic contact layer, InSb/InAlSb are super brilliant under growing mixed buffer layer, InSb successively on substrate crystal face Ohmic contact layer on lattice quantum well layer, AlGaSb electronic barrier layers and InSb.
The invention has the advantages that it grown one layer of AlGaSb electronic blocking above InSb quantum well absorption layers Layer blocks the electronics of light absorption generation in the poles P and hole-recombination, it is dark under reversed bias voltage to reduce InSb infrared detectors Noise current when electric current and work, improves the detectivity and maximum operating temperature of InSb detectors.The quantum well structure is red External detector has a strong response to the light in 10-15 μm of wave-length coverage, and response wave length reaches 20 μm or more under low temperature, zero-bias Resistance is higher than 10K Ω, and dark current is less than 10nA/cm under back bias voltage2, detectivity is 1.5 × 1012cmHz1/2W-1More than, voltage is rung 1 × 10 should be not less than respectively with current-responsive5V/W and 2A/W, quantum efficiency are maintained at 50% or more.This structure design detector Excellent performance have very high application value in military affairs, Atmospheric Survey, medical treatment etc..
Description of the drawings
It is detailed to the present invention below in conjunction with specific implementation mode, and with reference to attached drawing to further illustrate the present invention content After description such as, wherein：
Fig. 1 is the structural schematic diagram of infrared detector of the present invention；
Fig. 2 is 20 structural schematic diagram of compound buffer layer in Fig. 1；
Fig. 3 is 40 structural schematic diagram of superlattice quantum well in Fig. 1；
Fig. 4 is the preparation flow figure of the present invention.
Specific implementation mode
It please refers to Fig.1, shown in Fig. 2 and Fig. 3, the present invention provides a kind of InSb quantum trap infrared detectors structure comprising：
One substrate 10, the substrate 10 are the Si with the big mismatch of epitaxial material, and Si materials are most widely used semiconductors One of material, silicon technology is quite ripe in semiconductor technology, is gradually improved to technologies such as the surface treatments of Si substrates, because This selects Si substrates that can mitigate workload significantly.
One compound buffer layer 20, on substrate 10, which includes growth：
One low temperature AI Sb buffer layers 21, growth is on substrate 10, thickness 3-20nm, and the effect of this layer is effectively to inhibit The appearance of Twin Defects and formation AlSb island structures as much as possible are conducive to the AlSb high temperature buffer layers for growing high quality；
One AlSb buffer layers 22, growth is on low temperature AI Sb buffer layers 21, thickness 1000-2000nm, the layer have compared with High resistivity can greatly reduce the leakage current of device, while can limit and wear in the interface of low temperature AI Sb and high temperature AlSb Logical dislocation epitaxial layers extend, and reduce dislocation density；
One InAlSb buffer layers 23, on AlSb buffer layers 22, thickness 1000-4000nm's, Al mole contains growth Amount is 0.1-0.3, and the lattice mismatch between quantum well layer and substrate has been effectively relieved in this layer, further discharges lattice mismatch and causes Stress, most of dislocation is limited in this layer.
Ohmic contact layer 30 under one InSb, for growth on compound buffer layer 20, which is that N-shaped adulterates InSb, thick Degree is 300-1000nm, and Te doping concentrations are 2-8 × 1017cm3.This layer of one side forms good N-shaped ohmic contact layer, to draw Go out N electrode；On the other hand buffer layer is can be used as, keeps the active area of luminescent device farther from substrate, filtered dislocation, reduces position The defects of wrong twin, while impurity is reduced from the upward diffusion of substrate.
One InSb/InAlSb superlattice quantum wells layer 40, growth is at InSb on ohmic contact layer 30, superlattice period Number is 20-80, wherein each superlattice quantum well period includes：One N-shaped adulterates InSb Quantum Well well layer 41 and a barrier layer 42, the thickness of the InSb Quantum Well well layer 41 is 3-10nm, and n-type dopant Te, doping concentration is 1-4 × 1017cm-3；It should The thickness of InAlSb barrier layers 42 is 40-100nm, and the molar content of Al is 0.1-0.3.The In/InAlSb superlattice quantum wells Layer is that the core of infrared detector, InSb and InAlSb are tied respectively as potential well and potential barrier alternating growth at periodic Structure, makes originally that continuous conduction band splits into quantized energy subband in body material, and electronics generates subband after Quantum Well absorbs light Between transition the absorbing wavelength of InSb infrared detectors is increased to 10-15 μm since intersubband is away from smaller, it is suitable to Quantum Well When doping improve electron concentration in trap, enhance signal strength.So that the detectivity of detector reach 1.5 × 1012cmHz1/2W-1More than, voltage responsive and current-responsive are not less than 1 × 10 respectively5V/W and 2A/W.
One AlGaSb electronic barrier layers 50, growth on InSb/InAlSb superlattice quantum wells layer 40, the barrier layer Thickness is 50-200nm, and the molar content of Al is 0.1-0.3, this layer one electronics of formation between uptake zone and contact electrode Potential barrier, the electron motion that blocking absorbs light generation transition is compound to the generation of the poles P, avoids cutting down conductance signal, makes the structure quantum Efficiency reaches 50% or more.
Ohmic contact layer 60 on one InSb, on AlGaSb electronic barrier layers 50, which adulterates growth for p-type InSb, thickness are 300-1000nm, and Be doping concentrations are 2-8 × 1017cm-3, the effect of this layer is to form good p-type ohm Contact layer, to draw P electrode.
Referring to Fig. 4, and combine refering to fig. 1, Fig. 2 and Fig. 3, the present invention provides that a kind of to prepare InSb quantum well infrared The preparation method of device structure, includes the following steps：
Step 1：Substrate 10 is selected, the material of the substrate 10 is the Si with the big mismatch of epitaxial material；
Step 2：Ohmic contact layer 30, InSb/ under growing mixed buffer layer 20, InSb successively on 10 crystal face of substrate Ohmic contact layer 60 on InAlSb superlattice quantum wells layer 40, AlGaSb electronic barrier layers 50 and InSb.
Molecular beam epitaxy, english abbreviation MBE, this is a kind of extension film-forming method that new development is got up and a kind of spy Different technique for vacuum coating.Extension is a kind of new technology preparing monocrystal thin films, it is in substrate appropriate and suitable condition Under, along the method for substrate material crystalline axis direction successively growing film.The advantages of technology is：The underlayer temperature used is low, film layer Growth rate is slow, and beam intensity is easy to accurately control, and film layer component and doping concentration can rapidly be adjusted with the variation in source.Use this Kind technology can prepare the monocrystal thin films and alternating growth different component, the different films adulterated of thin to tens atomic layers And the superthin layer quantum microstructure material formed.
Wherein the compound buffer layer 20 includes：
One low temperature AI Sb buffer layers 21；
One is grown in the AlSb buffer layers 22 on low temperature AI Sb buffer layers 21；
One is grown in the InAlSb buffer layers 23 on AlSb buffer layers 22；
The thickness of the low temperature AI Sb buffer layers 21 is 3-20nm, and growth temperature is 400-500 DEG C；The AlSb bufferings 22 thickness of layer are 1000-2000nm, and growth temperature is 500-600 DEG C；The thickness of the InAlSb buffer layers 23 is 1000- 4000nm, growth temperature are 380-450 DEG C, and the molar content of Al is 0.1-0.3.
The material of ohmic contact layer 30 is that N-shaped adulterates InSb, thickness 300-1000nm, growth temperature under the wherein described InSb Degree is 380-450 DEG C, and Te doping concentrations are 2-8 × 1017cm-3；The thickness on InSb quantum well electronics barrier layer 50 is 50- 200nm, growth temperature are 450-550 DEG C, and wherein the molar content of Al is 0.1-0.3；Ohmic contact in the InSb Quantum Well Layer 60 adulterates InSb for p-type, and thickness is 300-1000nm, and growth temperature is 380-450 DEG C, the doping concentration of Be be 2-8 × 1017cm-3。
Wherein the number of superlattice cycles of the InSb/InAlSb superlattice quantum wells layer 40 are 20-80, each superlattices amount The sub- trap period includes：One N-shaped adulterates InSb Quantum Well well layer 41 and an InAlSb barrier layers 42, the InSb Quantum Well well layer 41 Thickness be 3-10nm, growth temperature be 380-450 DEG C, n-type dopant Te, doping concentration be 1-4 × 1017cm-3, should The thickness of InAlSb barrier layers 42 is 40-100nm, and growth temperature is 380-450 DEG C, and wherein the molar content of Al is 0.1-0.3.
When wherein growing InSb/InAlSb superlattice quantum well layers 40, the InSb Quantum Well well layer 41 and InAlSb gesture The barrier layer 20-80 period of 42 alternating growth often grows one layer and is both needed to pause 3-10s between InSb or InAlSb, to prevent to pause The desorption of period Sb can be achieved the goal by controlling the switch of Sb valves in MBE.
When wherein growing AlGaSb electronic barrier layers 50, since AlGaSb materials are higher than the conduction band of both sides InSb materials, because This can form the potential barrier of an electronics, and the component of the height of this electronic barrier and Al in AlGaSb have direct relationship, for To suitable barrier height, the component of Al in AlGaSb need to be strictly controlled, the molar content of Al is controlled between 0.1-0.3, This purpose can be realized by controlling the sources Al and Ga valve switch size.
The invention has the characteristics that and advantage：
The present invention provides a kind of material structure and preparation method of infrared detector, InSb quantum trap infrared detectors it is excellent Gesture is its high electron mobility, high saturated electron drift velocity and low-power consumption, and the energy gap of InSb is very narrow, lower of room temperature There is 0.17eV so that the long wave limit for length of InSb infrared detectors.Present invention optimizes the structure of quantum trap infrared detector and lifes Long method makes its response wave length reach 10-15 μ ms.
The structure of the present invention uses the Si materials of big mismatch as epitaxial substrate, and Si substrates are at low cost and are easy to get, maximum Advantage be can large-scale integrated.Growing mixed buffer layer structure on substrate, on the one hand by quantum well structure and substrate every It leaves, AlSb, InAlSb buffer layer all have the characteristics that high value, and the growth of this layer is conducive to reduce device creepage, obtains Resistance is higher than the panel detector structure of 10K Ω under zero-bias low temperature, and device dark current under low temperature, back bias voltage is made to be less than 10nA/ cm2, detectivity is maintained at 1.5 × 1012cmHz1/2W-1More than；On the other hand, buffer layer can be alleviated between substrate and device architecture Lattice mismatch, stress is discharged and the defects of dislocation is isolated, to obtain the second best in quality epitaxial layer.
Good well structure can be formed between InAlSb and InSb, electronics is effectively limited in well layer by InAlSb barrier layers It is interior, while being adulterated in well layer, two-dimensional electron gas surface density is improved, the signal output of device is enhanced, to obtain Higher than 1 × 105The voltage responsive of V/W and detector device higher than 2A/W current-responsives.
By control potential well layer thickness and barrier layer aluminium component control trap in band structure it is wide and build height can widen it is infrared The response wave length scope of detector, in addition, As elements can be mixed when growth InSb well layer, it can be quantum well infrared by this The response wave length of device is reduced to 5-10 μm.
The structure of the present invention adds the electronic barrier layer of AlGaSb, blocks the electronics of light absorption generation in the poles P and sky Cave is compound, reduces noise current when dark current of the InSb infrared detectors under reversed bias voltage and work, further increases The detectivity and maximum operating temperature of InSb detectors.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical solution and advantageous effect It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the present invention Within the scope of shield.

Claims (10)

1. a kind of InSb quantum trap infrared detectors structure comprising：
One substrate；
One compound buffer layer, growth is on substrate；
Ohmic contact layer under one InSb, growth is on compound buffer layer；
One InSb/InAlSb superlattice quantum well layers, growth is at InSb on ohmic contact layer；
One AlGaSb electronic barrier layers, growth is on InSb/InAlSb superlattice quantum well layers；
Ohmic contact layer on one InSb, growth is on AlGaSb electronic barrier layers.
2. InSb quantum trap infrared detectors structure according to claim 1, wherein the material of the substrate is and extension The Si of the big mismatch of material.
3. InSb quantum trap infrared detectors structure according to claim 1, wherein the compound buffer layer includes：
The thickness of one low temperature AI Sb buffer layers, low temperature AI Sb buffer layers is 3-20nm；
One AlSb buffer layers, for growth on low temperature AI Sb buffer layers, the thickness of the AlSb buffer layers is 1000-2000nm；
One InAlSb buffer layers, for growth on AlSb buffer layers, the thickness of the InAlSb buffer layers is 1000-4000nm, The molar content of middle Al is 0.1-0.3.
4. InSb quantum trap infrared detectors structure according to claim 1, wherein the InSb/InAlSb superlattices amount The number of superlattice cycles of sub- well layer are 20-80, and each superlattice quantum well period includes：One N-shaped adulterates InSb Quantum Well traps The thickness of layer and an InAlSb barrier layers, the InSb Quantum Well well layer is 3-10nm, n-type dopant Te, doping concentration 1-4 ×1017cm-3；The thickness of the InAlSb barrier layers is 40-100nm, and the molar content of Al is 0.1-0.3.
5. InSb quantum trap infrared detectors structure according to claim 1, wherein ohmic contact layer under the InSb Thickness is 300-1000nm, and Te doping concentrations are 2-8 × 1017cm-3；The thickness on InSb quantum well electronics barrier layer is 50- The molar content of 200nm, Al are 0.1-0.3；Ohmic contact layer is that p-type adulterates InSb in the InSb Quantum Well, and thickness is 300-1000nm, Be doping concentration are 2-8 × 1017cm-3。
6. a kind of preparation method preparing InSb quantum trap infrared detectors structure described in claim 1, includes the following steps：
Step 1：Substrate is selected, the substrate is the Si with the big mismatch of epitaxial material；
Step 2：Ohmic contact layer, InSb/InAlSb superlattices amounts under growing mixed buffer layer, InSb successively on substrate crystal face Ohmic contact layer on sub- well layer, AlGaSb electronic barrier layers and InSb.
7. the preparation method of InSb quantum trap infrared detectors structure according to claim 6, wherein the composite buffering Layer include：
One low temperature AI Sb buffer layers；
One is grown in the AlSb buffer layers on low temperature AI Sb buffer layers；
One is grown in the InAlSb buffer layers on AlSb buffer layers.
8. the preparation method of InSb quantum trap infrared detectors structure according to claim 7, wherein the low temperature AI Sb The thickness of buffer layer is 3-20nm, and growth temperature is 400-500 DEG C；The AlSb buffer layer thicknesses are 1000-2000nm, Growth temperature is 500-600 DEG C；The thickness of the InAlSb buffer layers is 1000-4000nm, and growth temperature is 380-450 DEG C, the molar content of Al is 0.1-0.3.
9. the preparation method of InSb quantum trap infrared detectors structure according to claim 6, wherein the InSb/ The number of superlattice cycles of InAlSb superlattice quantum well layers are 20-80, and each superlattice quantum well period includes：One N-shaped is mixed Miscellaneous InSb Quantum Well well layer and an InAlSb barrier layers, the thickness which adulterates InSb Quantum Well well layer are 3-10nm, growth temperature Degree is 380-450 DEG C, n-type dopant Te, and doping concentration is 1-4 × 1017cm-3；The thickness of the InAlSb barrier layers is 40- 100nm, growth temperature are 380-450 DEG C, and wherein the molar content of Al is 0.1-0.3.
10. the preparation method of InSb quantum trap infrared detectors structure according to claim 6, wherein Europe under the InSb The degree of nurse contact layer is 300-1000nm, and growth temperature is 380-450 DEG C, and Te doping concentrations are 2-8 × 1017cm-3；It is described The thickness on InSb quantum well electronics barrier layer is 50-200nm, and growth temperature is 450-550 DEG C, and the wherein molar content of Al is 0.1-0.3；Ohmic contact layer is that p-type adulterates InSb in the InSb Quantum Well, and thickness is 300-1000nm, and growth temperature is 380-450 DEG C, the doping concentration of Be is 2-8 × 1017cm-3。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109817754A (en) * 2019-01-25 2019-05-28 中科芯电半导体科技（北京）有限公司 A kind of material structure and preparation method thereof making InSb infrared detector
CN116722063A (en) * 2023-08-10 2023-09-08 太原国科半导体光电研究院有限公司 Superlattice infrared detector with planar structure and preparation method thereof

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