CN108281353B - A kind of method of scan-type high energy micro-beam X-ray preparation strained silicon - Google Patents
A kind of method of scan-type high energy micro-beam X-ray preparation strained silicon Download PDFInfo
- Publication number
- CN108281353B CN108281353B CN201810037474.1A CN201810037474A CN108281353B CN 108281353 B CN108281353 B CN 108281353B CN 201810037474 A CN201810037474 A CN 201810037474A CN 108281353 B CN108281353 B CN 108281353B
- Authority
- CN
- China
- Prior art keywords
- silicon
- ray
- strain
- high energy
- energy micro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 72
- 239000010703 silicon Substances 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 77
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 71
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 39
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 36
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 19
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 19
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 19
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 239000002131 composite material Substances 0.000 claims abstract description 17
- 230000001419 dependent effect Effects 0.000 claims abstract description 5
- 239000012535 impurity Substances 0.000 claims abstract description 5
- 238000012163 sequencing technique Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 12
- 230000000694 effects Effects 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 3
- 230000001066 destructive effect Effects 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000002194 synthesizing effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 230000005469 synchrotron radiation Effects 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 241000790917 Dioxys <bee> Species 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000002386 leaching Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 241000033695 Sige Species 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention discloses a kind of methods of scan-type high energy micro-beam X-ray preparation strained silicon, are related to IC manufacturing field；Method includes the following steps: synthesizing a Si/SiO2 two-layer composite system, its structure is the silicon thin film that upper surface is covered with silicon dioxide layer, irradiates the region of expected generation strain in Si/SiO2 two-layer composite system successively according to certain sequencing using high energy micro-beam X-ray to prepare the strained silicon of local train；The method that the present invention has used high energy micro-beam X-ray for the first time realizes precisely selection and controlled strain silicon strain region, and generate the purpose of the controllable dependent variable of size in differently strained region using the minimum feature of micro-beam X-ray beam spot area；This method have strain region and size it is precisely controllable, operating temperature is low, it is no be introduced into impurity, simple process, dependent variable range is big, it is not damaged to silicon the advantages that, be expected to the fields such as semiconductor integrated circuit, micro-nano electronic device be widely applied.
Description
Technical field
The present invention relates to IC manufacturing fields, and in particular to a kind of scan-type high energy micro-beam X-ray preparation strained silicon
Method.
Background technique
Silicon is the raw material that nowadays semiconductor manufacturing industry is particularly important, the continuous development with chip fabrication techniques with change
Into the appearance of strained silicon technology, which becomes, further increases the effective means of the chip speed of service.When silicon crystal lattice is by stress
Strain is generated, the effective mass for transmitting carrier can be reduced, mobility and saturated velocity increase.Therefore in same size of components
Under, if strained silicon technology is used to can reach increase because its electronics and the carrier transport factor in hole increase as carrier transportation channel
The target of component speed and driving current.
There are two main classes for contingency approach in strained silicon manufacture craft at present, i.e., substrate induces strain and technique is induced and answered
Become.The method that substrate induces strain is usually growth strain on the unmatched material of extension lattice, including Si substrate on substrate
Sige material and on SiGe void substrate growth strain Si material.This method advantage is can to improve electronics and vacancy simultaneously
Mobility, but the disadvantage is that relatively large strain can not be obtained, and when substrate Ge content is higher, since lattice mismatch is more serious
And forming a large amount of dislocation defects trapped electrons in SiGe/ strain silicon interface becomes band dot center, causes coulomb to dissipate electron motion
It penetrates, to lower mobility, and when additional effective electric field increases, hole mobility can also decline, it is most important that technique
Integrate difficulty (Douglas J Paul.Si/SiGe heterostructures:from material and physics to
devices and circuits[J].Semiconductor Science and Technology,2004)。
It is by controlling or regulating to some Si MOS common process, to realize in device ditch that technique, which induces strain,
Strain is generated at road.Main technique includes source/drain engineering (S/DEngineering), Stressed liner technology (stressed
) and shallow-trench isolation technology (STI) etc. liner.Source/drain engineering advantage is at low cost, but need to introduce high temperature, and there may be
Latch up effect (D.Zhang, B Y Nguyen, T.White, et al.Embedded SiGe S/D PMOS on thin body
SOI substrate with drive current enhancement[J].VLSI Technology,2005).Stress cap
Layer technological merit be so that the mobility of silicon in n and p-channel is increased, the disadvantage is that nut cap layer deposition process distinct methods or
High temperature is introduced, or is difficult to remove impurity and particle contaminant or cost is excessively high, and silicon nitride cap layer is more crisp easily rupturable, causes
Stress release makes dependent variable become smaller (D A Antoniadis, I Aberg, C Ni Chleirigh, et al.Continuous
MOSFET performance increase with device scaling:the role of strain and
channel material innovation[J].IBM Journal of Research and Development,2006)。
Since STI separation cannot be too small in shallow grooved-isolation technique, maximum value (Y M Sheu, the K Y Y for generating strain is limited
Doong,C H Lee,et al.Study on STI mechanical stress induced variations on
advanced CMOSFETs[J].Microelectronic Test Structures,2003)。
In addition, nowadays an important research direction is a variety of strain gauge techniques of integration further to improve device performance, and this
The difficulty of pretreatment and processing links and integrated circuit technology integration process in preparation process is substantially increased, increasing should exchange work
Influence of the skill module to circuit yield and reliability.
Summary of the invention
The present invention is directed to the shortcomings and deficiencies of current strained silicon production, based on sigmatron to silicon non-destructive and to dioxy
The irradiation effect of SiClx, a kind of method for proposing scan-type high energy micro-beam X-ray preparation strained silicon, by Si/SiO2 two-layer compound
Structural system prepares strained silicon, is expected to be widely applied in fields such as semiconductor integrated circuit, micro-nano electronic devices.
In order to achieve the above object, the present invention adopts the following technical scheme:
A kind of scan-type high energy micro-beam X-ray preparation strained silicon method, specifically comprises the following steps:
Step (1) makes to synthesize a Si/SiO2 two-layer composite system by known method, and structure is upper surface
It is covered with the silicon thin film of silicon dioxide layer, silicon film thickness d1, silicon dioxide layer thickness d2；
Step (2) is successively irradiated in Si/SiO2 two-layer composite system using high energy micro-beam X-ray according to certain sequence
It is expected that generating the region of strain, energy E, time for exposure t, beam spot diameter, dx。
The Si/SiO2 two-layer composite system synthesized in step (1), silicon film thickness d1It is 100 nanometers to 10 microns,
Silicon dioxide layer thickness d2Changeable range is d10.1~10 times.By the thickness and two for controlling silicon dioxide layer and silicon thin film
Person's interface bond strength generates the size of strain to control.
High energy micro-beam X-ray ENERGY E used in step (2) is 5~28keV, and time for exposure t is 0.1~10s, beam
Spot diameter dxIt is then to be adjusted according to required strain size and precision, minimum 50nm；The irradiation sequencing of high energy micro-beam X-ray
On the strain size of obtained strained silicon and region without influence.It is controlled by controlling energy and the time for exposure of high energy micro-beam X-ray
System generates the size of strain.
Compared to the prior art compared with the present invention has the advantages that being precisely controlled strained silicon strain region, and can be not
The controllable dependent variable of size is generated with strain region, strain region and strain size in previous technique is solved and is difficult to asking for determination
Topic；Entire strain path carries out at room temperature, overcomes the hot conditions of previous technique, improves the stability of obtained strained silicon
And reliability；It without adding other raw materials, can be completed using the irradiation effect of X-ray, therefore without introducing impurity, it is pollution-free；
Integrated process is simple, can be directly as gate medium without removing the silicon dioxide layer of strained silicon；With respect to other techniques
Speech can produce biggish maximum strain amount, while remove thin consolidation technique from, simplify the technological process of production for generating local train；
The X-ray exposure time is short, and strain path is fast；It is not damaged to silicon, it is expected in fields such as semiconductor integrated circuit, micro-nano electronic devices
It is widely applied.
Detailed description of the invention
Fig. 1 is the experiment schematic diagram of x-ray bombardment process of the present invention.
Fig. 2 is first experiment example high energy micro-beam X-ray scanning mode and experimental result of the present invention, in which: Fig. 2 (a) is X
Ray scanning mode and region, i.e., the expected region for generating strain in Si/SiO2 two-layer composite system；Fig. 2 (b) is scanning
Strain Distribution of the silicon thin film in region on the direction ZZ.
Fig. 3 is second experimental example high energy micro-beam X-ray scanning mode and experimental result of the invention, in which: Fig. 3 (a)~
It (d) is X-ray scanning mode and region, i.e., the expected region for generating strain in Si/SiO2 two-layer composite system；Fig. 3 (e)
For Strain Distribution of the silicon thin film on the direction ZZ of scanning area.
Specific embodiment
Below in conjunction with specification drawings and specific embodiments, the present invention is described further.
One embodiment specifically includes the following steps:
Step (1) synthesizes a Si/SiO2 two-layer composite system, is synthesized using well known dry-oxygen oxidation method, such as
Shown in Fig. 1, structure is the silicon thin film that upper surface is covered with silicon dioxide layer, and silicon film thickness is 2 μm, silicon dioxide layer thickness
It is 0.45 μm, having a size of 4.7mm × 4.7mm, wherein Si/SiO2 two-layer composite system, synthesis process details are as follows:
8 cun of N-type<100>low-resistance twin polishing silicon wafers are taken, standard cleaning is carried out to silicon wafer, remove surface with HF (1:100)
Oxide layer, and dried after blowing leaching with nitrogen, complete standby piece；Silicon wafer is slowly pushed into high temperature furnace again, leads to dry oxygen and enters high temperature furnace,
Flow is 0.4L/min, cooling after being warming up to 1000 DEG C of holdings 270 minutes；The dioxy that silicon wafer upper surface aoxidizes is measured later
SiClx oxidated layer thickness is 0.45 μm；It then first uses mechanical means to carry out silicon thin film thinned, silicon thin film is thinned to 15 μm
Left and right, then etch away remaining silicon thin film to 2 μm with dry method (SF6:C4F8=3:4), clean photoetching afterwards be diced into having a size of
The monolithic of 4.7mm × 4.7mm completes sample preparation.Silicon aoxidizes in order to prevent, and final product is saved in organic solvent.The experiment
Under the conditions of the Si/SiO2 two-layer composite system that synthesizes, silicon film thickness is 2 μm, and silicon dioxide layer thickness is 0.45 μm, two
Person's bond strength with higher.Silicon thin film and silicon dioxide layer thickness and the two interface bond strength etc. can be closed by changing
Regulated and controled at method, reaction time and temperature etc..
Step (2) successively irradiates Si/SiO2 two-layer compound knot according to certain sequence using synchrotron radiation high energy micro-beam X-ray
The expected region for generating strain in structure system, if Fig. 1 is the experiment schematic diagram of this experimental example x-ray bombardment process, it is contemplated that generate
The region of strain is obtained Si/SiO2 two-layer composite system regional area, as shown in stain in Fig. 2 (a), ranks phase
Distance is all 4 μm between adjacent stain, and detailed process information is as follows:
Irradiate the stain positioned at the first row first row first using synchrotron radiation high energy micro-beam X-ray, ENERGY E 20keV,
Time for exposure t is 0.1s, and beam spot diameter, is 1 μm；It is located at the stain of the first row secondary series using the irradiation of identical parameter later, with
This analogizes, and starts to irradiate the second row first row stain after irradiating to 12 stains of the first row, thus successively scan-type shines
It penetrates until being irradiated to the 12nd column stain of the 7th row terminates.
Fig. 2 (b) be above-mentioned steps after to silicon thin film carry out microscopic sdIBM-2+2q.p.approach as a result, the silicon for being illustrated as scanning area is thin
Strain Distribution of the film on the direction ZZ, it can be seen that should become apparent and distribute as net shape；Partially continuous white area, i.e., it is larger just
Strain region be cause due to impurity introduces or surface undulation etc. in sample making course localized interface bond strength difference to
Local train is generated, it is unrelated to generate strain path with X-ray.
Second embodiment specifically includes the following steps:
Step (1) synthesizes a Si/SiO2 two-layer composite system, is closed using well known dry-wet-dry oxidizing process
At as shown in Figure 1, its structure is the silicon thin film that upper surface is covered with silicon dioxide layer, silicon film thickness is 2 μm, silica
Layer is with a thickness of 0.7 μm, having a size of 4.7mm × 4.7mm, wherein Si/SiO2 two-layer composite system, and synthesis process details
It is as follows:
8 cun of N-type<100>low-resistance twin polishing silicon wafers are taken, standard cleaning is carried out to silicon wafer, remove surface with HF (1:100)
Oxide layer, and dried after blowing leaching with nitrogen, complete standby piece；Silicon wafer is slowly pushed into high temperature furnace again, leads to dry oxygen and enters high temperature furnace,
Flow is 0.4L/min, is warming up to 1000 DEG C and keeps after twenty minutes, wet oxygen being replaced dry oxygen and is passed through high temperature furnace with same traffic,
It after continuing 60min, keeps constant change of flow to lead to dry oxygen again, keeps cooling after 20min；Piece is taken to measure silicon wafer upper surface oxygen later
Changing obtained silica oxidated layer thickness is 0.7 μm；Mechanical means is then first used to carry out silicon thin film thinned, by silicon thin film
15 μm or so are thinned to, then etches away remaining silicon thin film to 2 μm with dry method (SF6:C4F8=3:4), cleans rear photoetching scribing
At the monolithic having a size of 4.7mm × 4.7mm, sample preparation is completed.Silicon aoxidizes in order to prevent, and final product is stored in organic solvent
In.The Si/SiO2 two-layer composite system synthesized under the experiment condition, silicon film thickness are 2 μm, and silicon dioxide layer thickness is
0.7 μm, the two bond strength with higher.Silicon thin film and silicon dioxide layer thickness and the two interface bond strength etc. can lead to
Change synthetic method, reaction time and temperature etc. is crossed to be regulated and controled.
Step (2) successively irradiates Si/SiO2 two-layer compound knot according to certain sequence using synchrotron radiation high energy micro-beam X-ray
The expected region for generating strain in structure system, if Fig. 1 is the experiment schematic diagram of this experimental example x-ray bombardment process, it is contemplated that generate
The region of strain is obtained Si/SiO2 two-layer composite system regional area, and as shown in Fig. 3 (a)~(d), stain is
High energy micro-beam X-ray point of irradiation, detailed process information are as follows:
The region as shown in Fig. 3 (a), ENERGY E 20keV, exposure are irradiated using synchrotron radiation high energy micro-beam X-ray first
Time t is 0.3s, and beam spot diameter, is 0.5 μm, and adjacent point of irradiation spacing is 0.8 μm, after arranging according to priority scan completion one immediately
Start the scanning of next column, until the stain sequence that all scanning is completed is carried out, i.e., irradiates the black of the first row first row first
Point irradiates the stain of the second row first row, until the stain of the 6th row first row, starts irradiation first immediately with identical parameters later
The stain of row secondary series, and so on, until the stain of the tenth five-element the 12nd column terminates.The scanning irradiation process of this experimental example
It carries out according to the sequence, is no longer illustrated in step later.
The region as shown in Fig. 3 (b), ENERGY E 20keV, exposure are irradiated using synchrotron radiation high energy micro-beam X-ray later
Time t is 5s, and beam spot diameter, is 0.5 μm, and adjacent point of irradiation spacing is 0.8 μm.
Then the region as shown in Fig. 3 (c), ENERGY E 20keV, exposure are irradiated using synchrotron radiation high energy micro-beam X-ray
Time t is 1s, and beam spot diameter, is 0.5 μm, and adjacent point of irradiation spacing is 0.8 μm.
Finally the region as shown in Fig. 3 (d), ENERGY E 20keV, exposure are irradiated using synchrotron radiation high energy micro-beam X-ray
Time t is 2s, and beam spot diameter, is 0.5 μm, and point of irradiation line space is 0.8 μm, and column pitch is 2.5 μm.
Fig. 3 (e) be above-mentioned steps after to silicon thin film carry out microscopic sdIBM-2+2q.p.approach as a result, the silicon for being illustrated as scanning area is thin
Strain Distribution of the film on the direction ZZ, it can be seen that actual strain region matches preferably with expected strain region, and due to not
Cause different zones strain size that difference is also presented with the time for exposure.The region of compression is presented without x-ray bombardment for part
For the hole for introducing surface when system preparation, it is unrelated that strain path is generated with X-ray.
Claims (4)
1. a kind of method of scan-type high energy micro-beam X-ray preparation strained silicon, which is characterized in that entire strain path is at room temperature
It carries out, specifically comprises the following steps:
Step (1) synthesizes a Si/SiO2Two-layer composite system, structure are the silicon that upper surface is covered with silicon dioxide layer
Film, silicon film thickness d1, silicon dioxide layer thickness d2, silicon film thickness d1Range of choice at 100 nanometers to 10 microns
Between, silicon dioxide layer thickness d2Range of choice be silicon film thickness d10.1~10 times；
Step (2) successively irradiates Si/SiO according to certain sequencing using high energy micro-beam X-ray2In two-layer composite system
It is expected that generating the region of strain, energy E, range of choice is 5~28keV, and time for exposure t, range of choice is 0.1~10s,
Beam spot diameter, is dx, adjusted according to required strain size and precision, minimum 50nm；It realizes to the non-destructive of silicon and to titanium dioxide
The irradiation effect of silicon controls the size for generating strain by controlling energy and the time for exposure of high energy micro-beam X-ray, does not produce
Raw high temperature；It has been precisely controlled strained silicon strain region；Without removal silicon dioxide layer, can make directly as gate medium
With；Without adding other raw materials, impurity is not introduced, it is pollution-free.
2. a kind of scan-type high energy micro-beam X-ray according to claim 1 prepares strained silicon method, it is characterised in that: step
Suddenly the big of strain is generated to control by the thickness and the two interface bond strength of control silicon dioxide layer and silicon thin film in (1)
It is small.
3. a kind of scan-type high energy micro-beam X-ray according to claim 1 prepares strained silicon method, it is characterised in that: step
Suddenly in (2) the irradiation sequencing of high energy micro-beam X-ray on the strain size of obtained strained silicon and region without influence.
4. a kind of scan-type high energy micro-beam X-ray according to claim 1 prepares strained silicon method, it is characterised in that: step
Suddenly it is realized in (2) by controlling energy and the time for exposure of high energy micro-beam X-ray controllable in differently strained region generation size
Dependent variable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810037474.1A CN108281353B (en) | 2018-01-15 | 2018-01-15 | A kind of method of scan-type high energy micro-beam X-ray preparation strained silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810037474.1A CN108281353B (en) | 2018-01-15 | 2018-01-15 | A kind of method of scan-type high energy micro-beam X-ray preparation strained silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108281353A CN108281353A (en) | 2018-07-13 |
| CN108281353B true CN108281353B (en) | 2019-04-23 |
Family
ID=62803690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810037474.1A Active CN108281353B (en) | 2018-01-15 | 2018-01-15 | A kind of method of scan-type high energy micro-beam X-ray preparation strained silicon |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108281353B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113640327B (en) * | 2021-06-03 | 2023-07-25 | 中国工程物理研究院材料研究所 | Nondestructive testing method for multi-layer metal film on surface of large-curvature micro part |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0349633B1 (en) * | 1987-12-09 | 1998-07-29 | Wisconsin Alumni Research Foundation | Polysilicon thin film process |
| CN1732556A (en) * | 2002-12-31 | 2006-02-08 | 先进微装置公司 | Method of forming a thick strained silicon layer and semiconductor structures incorporating a thick strained silicon layer |
| CN102201335A (en) * | 2011-06-01 | 2011-09-28 | 电子科技大学 | Manufacturing method of grid of MOS (metal oxide semiconductor) transistor with stable stress |
-
2018
- 2018-01-15 CN CN201810037474.1A patent/CN108281353B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0349633B1 (en) * | 1987-12-09 | 1998-07-29 | Wisconsin Alumni Research Foundation | Polysilicon thin film process |
| CN1732556A (en) * | 2002-12-31 | 2006-02-08 | 先进微装置公司 | Method of forming a thick strained silicon layer and semiconductor structures incorporating a thick strained silicon layer |
| CN102201335A (en) * | 2011-06-01 | 2011-09-28 | 电子科技大学 | Manufacturing method of grid of MOS (metal oxide semiconductor) transistor with stable stress |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108281353A (en) | 2018-07-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4716733B2 (en) | Method for forming strained silicon on insulator (SSOI) | |
| US6992025B2 (en) | Strained silicon on insulator from film transfer and relaxation by hydrogen implantation | |
| US6537606B2 (en) | System and method for improving thin films by gas cluster ion beam processing | |
| CN101208794B (en) | Silicon device on Si:C-OI and SGOI, and method of manufacture | |
| US7687329B2 (en) | Gettering of silicon on insulator using relaxed silicon germanium epitaxial proximity layers | |
| US6717213B2 (en) | Creation of high mobility channels in thin-body SOI devices | |
| Anner | Planar processing primer | |
| CN108281353B (en) | A kind of method of scan-type high energy micro-beam X-ray preparation strained silicon | |
| JPS5861643A (en) | Method of producing semiconductor device | |
| JP2004140326A (en) | Planarization method of thin-film surface | |
| US20030077882A1 (en) | Method of forming strained-silicon wafer for mobility-enhanced MOSFET device | |
| CN108335973B (en) | A kind of method of sigmatron preparation strained silicon | |
| US20080237809A1 (en) | Method of fabricating hybrid orientation substrate and structure of the same | |
| Serre et al. | β-SiC on SiO2 formed by ion implantation and bonding for micromechanics applications | |
| Magerlein et al. | Characterization of GaAs self‐aligned refractory‐gate metal‐semiconductor field‐effect transistor (MESFET) integrated circuits | |
| Ishikawa et al. | Preparation of thin silicon-on-insulator films by low-energy oxygen ion implantation | |
| US6551898B1 (en) | Creation of a polarizable layer in the buried oxide of silicon-on-insulator substrates for the fabrication of non-volatile memory | |
| Fan et al. | Thickness uniformity of silicon-on-insulator fabricated by plasma immersion ion implantation and ion cut | |
| DE19750167A1 (en) | Process for manufacturing integrated circuits | |
| JPS6043814A (en) | Manufacture of semiconductor crystalline film | |
| Chen et al. | Formation of silicon on insulator using separation by implantation of oxygen with water plasma | |
| Wang et al. | Novel approaches for low cost fabrication of SOI | |
| Claeys et al. | Electrical Defect Issues of Hetero-Epitaxy for Advanced Nanometric CMOS Technologies | |
| Bohr | MOS transistor scaling challenges | |
| US20040029325A1 (en) | Method for making a soi semiconductor substrate with thin active semiconductor layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |