CN108335973B - A kind of method of sigmatron preparation strained silicon - Google Patents
A kind of method of sigmatron preparation strained silicon Download PDFInfo
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- CN108335973B CN108335973B CN201810037473.7A CN201810037473A CN108335973B CN 108335973 B CN108335973 B CN 108335973B CN 201810037473 A CN201810037473 A CN 201810037473A CN 108335973 B CN108335973 B CN 108335973B
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 68
- 239000010703 silicon Substances 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 84
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 67
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 42
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 39
- 230000004888 barrier function Effects 0.000 claims abstract description 25
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 24
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 24
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 24
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 24
- 239000010409 thin film Substances 0.000 claims abstract description 23
- 239000002131 composite material Substances 0.000 claims abstract description 22
- 239000010408 film Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 241000790917 Dioxys <bee> Species 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000003786 synthesis reaction Methods 0.000 claims description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 3
- 230000001419 dependent effect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000002386 leaching Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 230000005469 synchrotron radiation Effects 0.000 description 2
- 238000010189 synthetic method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 208000035126 Facies Diseases 0.000 description 1
- 206010027146 Melanoderma Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 241000033695 Sige Species 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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Abstract
The invention discloses a kind of methods of sigmatron preparation strained silicon, are related to IC manufacturing field；Method includes the following steps: (1) synthesizes a Si/SiO2 two-layer composite system, its structure is the silicon thin film that upper surface is covered with silicon dioxide layer, (2) to generate local train, a barrier bed is then placed above Si/SiO2 two-layer composite system, and the barrier bed above strain region needed for silicon thin film is outputed to the slot of corresponding size and shape；To generate global strain, then barrier bed is not placed, (3) irradiate Si/SiO2 two-layer composite system by barrier bed using sigmatron and prepare strained silicon；The characteristics of method that the present invention has used sigmatron for the first time combines the method that constituency covers, is greater than silicon wafer sizes using X-ray beam spot area realizes the purpose of quickly preparation strained silicon；This method have operating temperature it is low, strain region is controllable, it is no be introduced into impurity, simple process, dependent variable range is big, high production efficiency, it is not damaged to silicon the advantages that, be expected to the fields such as semiconductor integrated circuit, micro-nano electronic device be widely applied.
Description
Technical field
The present invention relates to IC manufacturing fields, and in particular to a kind of method of sigmatron preparation strained silicon.
Background technique
Silicon is the raw material that nowadays semiconductor manufacturing industry is particularly important, the continuous development with chip fabrication techniques with change
Into the appearance of strained silicon technology, which becomes, further increases the effective means of the chip speed of service.When silicon crystal lattice is by stress
Strain is generated, the effective mass for transmitting carrier can be reduced, mobility and saturated velocity increase.Therefore in same size of components
Under, if strained silicon technology is used to can reach increase because its electronics and the carrier transport factor in hole increase as carrier transportation channel
The target of component speed and driving current.
There are two main classes for contingency approach in strained silicon manufacture craft at present, i.e., substrate induces strain and technique is induced and answered
Become.The method that substrate induces strain is usually growth strain on the unmatched material of extension lattice, including Si substrate on substrate
Sige material and on SiGe void substrate growth strain Si material.This method advantage is can to improve electronics and vacancy simultaneously
Mobility, but the disadvantage is that relatively large strain can not be obtained, and when substrate Ge content is higher, since lattice mismatch is more serious
And forming a large amount of dislocation defects trapped electrons in SiGe/ strain silicon interface becomes band dot center, causes coulomb to dissipate electron motion
It penetrates, to lower mobility, and when additional effective electric field increases, hole mobility can also decline, it is most important that technique
Integrate difficulty (Douglas J Paul.Si/SiGe heterostructures:from material and physics to
devices and circuits[J].Semiconductor Science and Technology,2004)。
It is by controlling or regulating to some Si MOS common process, to realize in device ditch that technique, which induces strain,
Strain is generated at road.Main technique includes source/drain engineering (S/D Engineering), Stressed liner technology (stressed
) and shallow-trench isolation technology (STI) etc. liner.Source/drain engineering advantage is at low cost, but need to introduce high temperature, and there may be
Latch up effect (D.Zhang, B Y Nguyen, T.White, et al.Embedded SiGe S/D PMOS on thin body
SOI substrate with drive current enhancement[J].VLSI Technology,2005).Stress cap
Layer technological merit be so that the mobility of silicon in n and p-channel is increased, the disadvantage is that nut cap layer deposition process distinct methods or
High temperature is introduced, or is difficult to remove impurity and particle contaminant or cost is excessively high, and silicon nitride cap layer is more crisp easily rupturable, causes
Stress release makes dependent variable become smaller (D A Antoniadis, I Aberg, C Ni Chleirigh, et al.Continuous
MOSFET performance increase with device scaling:the role of strain and
channel material innovation[J].IBM Journal of Research and Development,2006)。
Since STI separation cannot be too small in shallow grooved-isolation technique, maximum value (Y M Sheu, the K Y Y for generating strain is limited
Doong,C H Lee,et al.Study on STI mechanical stress induced variations on
advanced CMOSFETs[J].Microelectronic Test Structures,2003)。
In addition, nowadays an important research direction is a variety of strain gauge techniques of integration, by overall situation strain and local strain facies knot
It closes further to improve device performance, and which greatly enhances pretreatment in preparation process and processing links and integrated circuit technology
The difficulty of integration process increases influence of the strain technical module to circuit yield and reliability.
Summary of the invention
The present invention is directed to the shortcomings and deficiencies of current strained silicon production, based on sigmatron to silicon non-destructive and to dioxy
The irradiation effect of SiClx, a kind of method for proposing sigmatron preparation strained silicon, by Si/SiO2 two-layer composite system system
Standby strained silicon is expected to be widely applied in fields such as semiconductor integrated circuit, micro-nano electronic devices.
In order to achieve the above object, the present invention adopts the following technical scheme:
A kind of sigmatron preparation strained silicon method, entire strain path carry out at room temperature, specifically include following step
It is rapid:
Step (1) makes to synthesize a Si/SiO2 two-layer composite system by known method, and structure is covered for upper surface
It is stamped the silicon thin film of silicon dioxide layer, silicon film thickness d1, silicon dioxide layer thickness d2；
Step (2) is then placed one above Si/SiO2 two-layer composite system and is blocked to generate local train
Layer, and the barrier bed above strain region needed for silicon thin film is outputed to the slot of corresponding size and shape；It is answered to generate the overall situation
Become, does not then place barrier bed；
Step (3) irradiates Si/SiO2 two-layer composite system by barrier bed using sigmatron, and energy E exposes
It is t between light time, beam spot area is Sx。
The upper surface synthesized in step (1) is covered with the silicon thin film of silicon dioxide layer, silicon film thickness d1Extremely for 100 nanometers
10 microns, silicon dioxide layer thickness d2Changeable range is d10.1~10 times.Pass through control silicon dioxide layer and silicon thin film
Thickness controls the size for generating strain with the two interface bond strength.
The layer material that blocks placed in step (2) is attached most importance to metallic lead, and thickness is not less than 2mm.
Sigmatron ENERGY E used in step (3) is 5~28keV, and time for exposure t is 0.1~10s, beam spot face
Product SxIt should be greater than Si/SiO2 two-layer composite system size, its surface universe can be covered.By changing sigmatron
Energy and time for exposure control the size for generating strain.
Compared to the prior art compared with overcoming previous the present invention has the advantages that entire strain path carries out at room temperature
The hot conditions of technique improve the stability and reliability of obtained strained silicon；Without adding other raw materials, X-ray is utilized
Irradiation effect can be completed, therefore without introducing impurity, pollution-free；Integrated process is simple, without removing the dioxy of strained silicon
SiClx layer, can be directly as gate medium；The size for generating strain can be freely controlled, and can produce for other opposite techniques
Biggish maximum strain amount；The X-ray exposure time is short, and strain path is fast, high production efficiency；Global strain drawn game is realized simultaneously
The combination of portion's strain, it is not damaged to silicon, the technological process of production is greatly simplified, high production efficiency is, it can be achieved that industrialization is extensive raw
It produces, is expected to be widely applied in fields such as semiconductor integrated circuit, micro-nano electronic devices.
Detailed description of the invention
Fig. 1 is the experiment schematic diagram of sigmatron irradiation process of the present invention.
Fig. 2 is the barrier bed and experimental result that first embodiment of the invention is placed, in which: Fig. 2 (a) is barrier bed shape
Shape and slot position；Fig. 2 (b) is Strain Distribution of the silicon thin film on the direction ZZ below barrier bed.
Fig. 3 is the barrier bed and experimental result that second embodiment of the invention is placed, in which: Fig. 3 (a) is barrier bed shape
Shape and slot position；Fig. 3 (b) is Strain Distribution of the silicon thin film on the direction ZZ below barrier bed.
Specific embodiment
Below in conjunction with specification drawings and specific embodiments, it is situated between using two embodiments are further to the present invention
It continues.
One embodiment specifically includes the following steps:
Step (1) synthesizes a Si/SiO2 two-layer composite system, is synthesized using well known dry-oxygen oxidation method, such as
Shown in Fig. 1, structure is the silicon thin film that upper surface is covered with silicon dioxide layer, and silicon film thickness is 2 μm, silicon dioxide layer thickness
It is 0.45 μm, having a size of 4.7mm × 4.7mm, wherein Si/SiO2 two-layer composite system, synthesis process details are as follows:
8 cun of N-type<100>low-resistance twin polishing silicon wafers are taken, standard cleaning is carried out to silicon wafer, remove surface with HF (1:100)
Oxide layer, and dried after blowing leaching with nitrogen, complete standby piece；Silicon wafer is slowly pushed into high temperature furnace again, leads to dry oxygen and enters high temperature furnace,
Flow is 0.4L/min, cooling after being warming up to 1000 DEG C of holdings 270 minutes；Piece is taken to measure what silicon wafer upper surface aoxidized later
Silica oxidated layer thickness is 0.45 μm；It then first uses mechanical means to carry out silicon thin film thinned, silicon thin film is thinned to
15 μm or so, then remaining silicon thin film is etched away to 2 μm with dry method (SF6:C4F8=3:4), photoetching is diced into size after cleaning
For the monolithic of 4.7mm × 4.7mm, sample preparation is completed.Silicon aoxidizes in order to prevent, and final product is saved in organic solvent.The reality
The Si/SiO2 two-layer composite system synthesized under the conditions of testing, silicon film thickness are 2 μm, and silicon dioxide layer thickness is 0.45 μm,
The two bond strength with higher.Silicon thin film and silicon dioxide layer thickness and the two interface bond strength etc. can pass through change
Synthetic method, reaction time and temperature etc. are regulated and controled.
Step (2) places a barrier bed, partial structurtes above the Si/SiO2 two-layer composite system synthesized
As shown in Fig. 2 (a), for barrier bed with a thickness of 2mm, slot is the circular hole that diameter is 1 μm, and ranks direction slot spacing is all 4 μm, altogether
Ten rows six column.
Step (3) irradiates Si/SiO2 two-layer compound knot by barrier bed using the synchrotron radiation sigmatron of vertical incidence
Structure system, as shown in Figure 1, ENERGY E is 20keV, time for exposure t is 0.1s, beam spot diameter, 5mm, i.e. beam spot area SxFor
6.25πmm2, the system surface can be completely covered.
Fig. 2 (b) is to be illustrated as silicon thin film part to silicon thin film Microstructure characterization after irradiating and answer variation on the direction ZZ
Cloth makes irradiated site generate strain because sigmatron irradiates Si/SiO2 two-layer composite system by barrier bed circular hole, from
And obviously observe that strain distributes as net shape.
Second embodiment specifically includes the following steps:
Step (1) synthesizes a Si/SiO2 two-layer composite system, is closed using well known dry-wet-dry oxidizing process
At as shown in Figure 1, its structure is the silicon thin film that upper surface is covered with silicon dioxide layer, silicon film thickness is 2 μm, silica
Layer is with a thickness of 0.7 μm, having a size of 4.7mm × 4.7mm, wherein Si/SiO2 two-layer composite system, and synthesis process details
It is as follows:
8 cun of N-type<100>low-resistance twin polishing silicon wafers are taken, standard cleaning is carried out to silicon wafer, remove surface with HF (1:100)
Oxide layer, and dried after blowing leaching with nitrogen, complete standby piece；Silicon wafer is slowly pushed into high temperature furnace again, leads to dry oxygen and enters high temperature furnace,
Flow is 0.4L/min, is warming up to 1000 DEG C and keeps after twenty minutes, wet oxygen being replaced dry oxygen and is passed through high temperature furnace with same traffic,
It after continuing 60min, keeps constant change of flow to lead to dry oxygen again, keeps cooling after 20min；Piece is taken to measure silicon wafer upper surface oxygen later
Changing obtained silica oxidated layer thickness is 0.7 μm；Mechanical means is then first used to carry out silicon thin film thinned, by silicon thin film
15 μm or so are thinned to, then etches away remaining silicon thin film to 2 μm with dry method (SF6:C4F8=3:4), cleans rear photoetching scribing
At the monolithic having a size of 4.7mm × 4.7mm, sample preparation is completed.Silicon aoxidizes in order to prevent, and final product is stored in organic solvent
In.The Si/SiO2 two-layer composite system synthesized under the experiment condition, silicon film thickness are 2 μm, and silicon dioxide layer thickness is
0.7 μm, the two bond strength with higher.Silicon thin film and silicon dioxide layer thickness and the two interface bond strength etc. can lead to
Change synthetic method, reaction time and temperature etc. is crossed to be regulated and controled.
Step (2) places a barrier bed above the Si/SiO2 two-layer composite system synthesized, and structure is as schemed
Shown in 3 (a), barrier bed is 3 μm with a thickness of 2mm, the diameter of round slot, and adjacent circular slot spacing is all 5 μm, wherein rectangular
A length of 8 μm of shape slot, width is 3 μm.
Step (3) irradiates Si/SiO2 two-layer compound knot by barrier bed using the synchrotron radiation sigmatron of vertical incidence
Structure system, as shown in Figure 1, ENERGY E is 20keV, time for exposure t is 2s, beam spot diameter, 5mm, i.e. beam spot area SxFor 6.25 π
mm2, the system surface can be completely covered.
Fig. 3 (b) is to be illustrated as silicon thin film part to silicon thin film Microstructure characterization after irradiating and answer variation on the direction ZZ
Cloth, it is seen that generation strain region is obviously consistent with barrier bed slot position, and lower right corner blackspot is that surface pit itself causes to answer
Become larger.
Claims (2)
1. a kind of method of sigmatron preparation strained silicon, it is characterised in that: entire strain path carries out at room temperature, specifically
Include the following steps:
Step (1) synthesizes a Si/SiO2 two-layer composite system, and structure is the silicon that upper surface is covered with silicon dioxide layer
Film, silicon film thickness d1, silicon dioxide layer thickness d2；
Step (2) then places a barrier bed to generate local train above Si/SiO2 two-layer composite system, and
Barrier bed above strain region needed for silicon thin film is outputed to the slot of corresponding size and shape；To generate global strain, then
Do not place barrier bed；
Step (3) irradiates Si/SiO2 two-layer composite system by barrier bed using sigmatron, ENERGY E for 5~
28keV, time for exposure t are 0.1~10s, beam spot area SxThe size that should be greater than Si/SiO2 two-layer composite system, can
Enough cover its surface universe；
In the Si/SiO2 two-layer composite system of step (1) synthesis, silicon film thickness d1It is 100 nanometers to 10 microns, dioxy
Change silicon layer thickness d2Changeable range is d10.1~10 times.
2. a kind of method of sigmatron preparation strained silicon according to claim 1, it is characterised in that: institute in step (2)
It states and blocks layer material and attach most importance to metallic lead, thickness is not less than 2mm.
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