CN108277477A - Liquid vaporization device and the semiconductor processing system for using the liquid vaporization device - Google Patents
Liquid vaporization device and the semiconductor processing system for using the liquid vaporization device Download PDFInfo
- Publication number
- CN108277477A CN108277477A CN201810071252.1A CN201810071252A CN108277477A CN 108277477 A CN108277477 A CN 108277477A CN 201810071252 A CN201810071252 A CN 201810071252A CN 108277477 A CN108277477 A CN 108277477A
- Authority
- CN
- China
- Prior art keywords
- cavity
- main body
- stopper
- vaporization device
- liquid vaporization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material using a porous body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention relates to a kind of high efficiency semiconductor film forming liquid vaporizer, which is output in the reaction chamber of semiconductor film forming by gas circuit by the gas after vaporization finally by carrier gas by being vaporized with liquid charging stock specific film forming and prepares film.The liquid vaporization device includes a main body and a stopper.One cavity of subject definition, the cavity have the input terminal for receiving one or more raw materials and the output end for gas to be discharged.The stopper is arranged in the cavity of the main body, and the cavity is thereby divided into one first cavity and one second cavity, wherein first cavity comprising the input terminal and second cavity includes the output end.The stopper has one or more poroid channels, and thereby first cavity is interconnected with second cavity by the poroid channel.
Description
Technical field
The present disclosure generally relates to semiconductor crystal wafer process fields to be mainly used for more particularly, to a kind of liquid vaporization device
Liquid charging stock is vaporized and is supplied to semiconductor processing system as reaction gas.
Background technology
Currently, in semiconductive thin film deposition applications and manufacturing field, reaction gas and/or film forming gas are mainly by liquid
Raw material is provided by a vapourizing unit.The promotion of the vaporization efficency of liquid helps to promote the utilization rate of raw material, and sufficient
Liquid charging stock vaporization also contributes to form satisfied semiconductive thin film.Therefore, improving the vaporization efficency of vapourizing unit becomes design
And the highest priority of manufacture.The promotion of vaporization efficency is mainly related with some factors, including extending the vaporization time of liquid charging stock
And the temperature distribution evenness and its constant in vaporization cavity.
Chinese patent bulletin CN103380486B discloses a kind of vapourizing unit, and a heater is set to a vaporization
In the carrier gas channel of main body, and the heater has a circular cone or pyramidal structure, and historically this means is formed by thin
Film has relatively small number of ripple, particle and carbon content.Chinese patent announces CN105220129A and discloses a kind of vaporization dress
Set, structure design use with larger wall area and cross-sectional flow area than one or more channels, be furnished with simultaneously
One or more heating devices, thereby promote vaporization efficency.Chinese patent bulletin CN101529564B discloses a kind of vaporization dress
It sets, with multiple nozzle discharge liquid charging stocks, each nozzle is surrounded by a carrier gas discharge opening, and with presser unit week
Phase sexually revises the volume for the cavity that liquid charging stock flows through, and it is small and size uniform thereby to make the drop of discharge.
The prior art disclosed above be respectively improve the distribution of temperature to improve the means of heater configuration, or with
It improves the means of the cavity of vapourizing unit and promotes vaporization efficency to extend vaporization time.However, these technological means lack together
When using extend vaporization time and maintain the cavity temperature uniformity as target.Therefore, for the better semiconductive thin film of production quality
Or improve relevant treatment, it is necessary to develop high efficiency semiconductor film forming vapourizing unit that is a kind of while considering above two factor.
It is not not answer to the reference of any previous disclosure (or its derivation information) or any known item in this specification yet
It is considered as confirming or recognize or any type of suggestion, i.e. previous application (or its derivation information) or known things, constitutes this
A part for the general common knowledge in field involved by specification.
Invention content
The purpose of the present invention is to provide a kind of liquid vaporization device, it is configured to receive load from a carrier gas supply source
Body gas and from a liquid charging stock supply it is former receive liquid charging stock, which includes a main body and a stopper.It should
There is main body an inner wall, the inner wall to define a cavity, which has the input terminal and use for receiving one or more raw materials
In an output end of discharge gas.The stopper is arranged in the cavity of the main body, and the cavity is thereby divided into one first chamber
Body and one second cavity, wherein first cavity comprising the input terminal and second cavity include the output end, the blocking utensil
There are one or more poroid channels, thereby first cavity is interconnected with second cavity by the poroid channel.
In one embodiment, which also has the first passage for received vector gas and is used for receiving liquid
One second channel of body raw material, the first passage and the second channel are connected to the input terminal of the cavity.
In one embodiment, which includes the section for tilting extension upwards from the input terminal of the cavity.
In one embodiment, which includes a first part (upper main body) and a second part (lower main body), is somebody's turn to do
The first part of main body is combined together with second part via a connection means.
In one embodiment, which has a upper surface and a lower surface, and the poroid channel of the stopper is prolonged
It stretches between the upper surface and the lower surface.
In one embodiment, which has a upper surface and a lower surface, the wherein upper surface of the stopper
First cavity is formed with an inner wall of the first part of the main body, and the second part of the lower surface of the stopper and the main body
An inner wall form second cavity.
In one embodiment, upper surface of first cavity from the input terminal to the stopper is prolonged with diffusion mode
It stretches.
In one embodiment, which is to prolong in a convergent way from the lower surface of the stopper to the output end
It stretches.
In one embodiment, the stopper have a upper surface, a lower surface and in the upper and lower surface it
Between the side that extends, the upper surface of the stopper has a vertex, and the vertex is with respect to side protrusion.
In one embodiment, fluid present invention vapourizing unit further includes the one stream being connect with the second channel of the main body
Control means are measured, to control the liquid charging stock flow of the second channel.
In one embodiment, fluid present invention vapourizing unit further includes a fixing means, to consolidate the stopper
It is scheduled in the cavity of the main body.The fixing means include from a protrusion of the side of stopper extension and from the main body
The recessed portion that wall extends internally makes the stopper be located in the cavity by the matching of the protrusion and the recessed portion.
In one embodiment, fluid present invention vapourizing unit further includes a heating means, is set to the one of the main body
Periphery, thermal conductivity is led to the main body.
In one embodiment, fluid present invention vapourizing unit further includes an insulation sleeve, is used for the vapourizing unit
With ambient environment.
It is still another object of the present invention to provide a kind of semiconductor processing systems, including a reaction cavity and liquid vaporization
Device.The reaction cavity has the spray equipment for providing reaction gas.The liquid vaporization device includes a main body and one
Stopper.There is the main body inner wall, the inner wall to define a cavity, which has defeated for receiving the one of one or more raw materials
Enter end and the output end for gas to be discharged, which is connected to the spray equipment for being coupled to the reaction cavity.The stopper
It is arranged in the cavity of the main body, and the cavity is thereby divided into one first cavity and one second cavity, wherein first cavity
Including the input terminal and second cavity include the output end, which has one or more poroid channels, thereby this first
Cavity is interconnected with second cavity by the poroid channel.
Fluid present invention vapourizing unit is from improving vaporization time, ensure that the temperature branch in vaporization chamber body is uniform and constant two
Aspect is set about.It designs through this structure, improves the heat storage capacity of vapourizing unit, increase quantity of heat storage, and then promote vaporization dress
The sensibility for temperature fluctuation is set, ensure that temperature is constant.Meanwhile stopper is provided in vaporizing cavity, increase vapour
Disguise the heating surface (area) (HS set, ensures the uniformity of temperature profile in vapourizing unit cavity.In addition, poroid logical formed in stopper
Road makes mixed gas (comprising the liquid charging stock, carrier gas and unstrpped gas not vaporized fully) orderly be discharged, and relatively carries
High vaporization time.Fluid present invention vapourizing unit also may include following features：1. delicate structure and manufacturing cost is relatively low；2. profit
In the rectilinear configuration of gas discharge；3. slant path is adopted in the input of liquid charging stock；4. vapourizing unit is detachably safeguarded.
It will be appreciated that the broad form and its respective feature of the present invention can be used in combination, are interchangeable and/or be independently operated,
And it is not used in limitation and refers to individual broad form.
Description of the drawings
Below in conjunction with the accompanying drawings and embodiment the present invention is described in further detail：
Fig. 1 is the structure diagram using the semiconductor processing system of fluid present invention gasification installation；
Fig. 2 is the structural schematic diagram of fluid present invention gasification installation；
Fig. 3 is the sectional view of Fig. 2；
Fig. 4 is the structural schematic diagram of the stopper of fluid present invention gasification installation；
Fig. 5 is the structural schematic diagram of the upper surface of stopper in Fig. 4；
In figure：100 semiconductor processing systems；110 reaction cavities；111 support constructions；112 spray equipments；120 vaporization dresses
It sets；121 carrier gas sources of supply；122 liquid charging stock sources of supply；123 controllers；130 exhaust systems；200 vapourizing units；210
Insulation sleeve；The top of 211 insulation sleeves；The side wall of 212 insulation sleeves；The floor of 213 insulation sleeves；220 first pipelines；221 flow controls
Means processed；222 second pipelines；223 third pipelines；230 main bodys；The upper main bodys of 230a；Main body under 230b；The upper table of main body on 231
Face；The lower surface of 232 times main bodys；The outer surface of 233 main bodys；234 first passages；235 second channels；236 third channels；237
The inner wall of main body；The first inner walls of 237a；The second inner walls of 237b；238a input terminals；238b output ends；The first cavitys of 239a；239b
Second cavity；240 screws；241O type rings；242 heating meanss；250 stoppers；251 poroid channels；252 upper surfaces；253 following tables
Face；254 sides；255 protrusions；256 vertex.
Specific implementation mode
In this specification and following claims, unless the context otherwise requires, otherwise word " comprising " and
It includes the integer group or step that the variant of such as " include " or " contain " etc, which will be understood as implying, but is not excluded for any
Other integers or integer group.
Fig. 1 shows an embodiment 100 of semiconductor processing system of the present invention.The system 100 include a reaction cavity 110,
One vapourizing unit 120 and an exhaust system 130.In general, typical reaction cavity 110, which mainly has, is used to support wafer
One support construction 111, the spray equipment 112 for providing reaction gas and at least one exhaust for processing exhaust gas to be discharged are logical
Road (not shown).Reaction cavity 110 is generally cylindrical in shape, and support construction 111 has a pedestal and the support of horizontal bearing wafer
The support member of pedestal.The pedestal can be embedded to the heater for heating pedestal and wafer, generally via being connected to
The power supply for stating heater provides electric power, thereby adjusts the temperature of pedestal.Spray equipment 112 is set to the top of reaction cavity 110
Portion, and be configured to receive the gas from vapourizing unit 120 and be supplied in reaction cavity 110.Exhaust system 130 has more
A pipeline, control valve and pumping, these assembly synergistics are operated to control the air pressure in reaction cavity 110.
Vapourizing unit 120 connects via a other pipeline and a carrier gas source of supply 121 and a liquid charging stock source of supply 122
Logical coupling so that carrier gas and liquid charging stock can be synchronized or asynchronous be transmitted to vapourizing unit 120.The pipeline, which can have, to be used
It can be controlled by the signal of a controller 123 in control gas or the special service valve of fluid flow, especially these valves.The controller
123 also may be configured to control vapourizing unit 120 to other valves of pipeline between reaction cavity 110.
In known vapourizing unit, liquid charging stock sometimes part be not vaporized completely, but in the form of particle with
The spray equipment that pipeline enters reaction cavity so that spray equipment sprays unpurified reaction gas, and it is unsatisfied heavy to cause
Product film quality.The liquid vaporization device of present invention offer is intended to avoid liquid charging stock vaporization incomplete, mainly from extension vapour
Change time and temperature distributing homogeneity to set about, fully be vaporized before so that liquid charging stock is exported vapourizing unit.
Fig. 2 to Fig. 3 shows that an embodiment 200 of fluid present invention vapourizing unit, wherein Fig. 2 show the appearance of equipment, Fig. 3
For the longitudinal sectional drawing of Fig. 2, the inside configuration of the vapourizing unit 200 is shown.According to this embodiment, vapourizing unit is vertically to match
It sets, implies that carrier gas and liquid charging stock generally flow from top to bottom in the vapourizing unit.
Referring to Fig. 2, vapourizing unit 200 has the insulation sleeve 210 for thermal insulation, is in cylinder.In the embodiment
In, insulation sleeve 210 is assembled by multiple components.As shown in figure 3, insulation sleeve 210 has a top 211, one or more sides
Wall 212 and a floor 213, these components can assemble via any means known and constitute insulation sleeve.In other embodiments, insulation sleeve
Can be in other shapes.It is provided about one first pipeline 220 and a flow control means 221 at the top of insulation sleeve 210 211.
One second pipeline 222 is provided near the side wall 212 of insulation sleeve 210.It has been provided about on the floor of insulation sleeve 210 213
One third pipeline 223.
Top 211 is passed through in first pipeline, 220 self-insulating set 210, as carrier gas of the reception from a carrier gas source
The pipeline of body.Side wall 212 is passed through in second pipeline, 222 self-insulating set 210, it is former as the liquid from a liquid charging stock source is received
The pipeline of material.Self-insulating cover of third pipeline 223 passes through floor 213 inside 210, the output pipe as vaporizer body.Aforementioned pipe
Road may include the connection means for connecting exterior line, seem VCR connectors.Flow control means 221 via configuration with
Control is entered the liquid charging stock flow of vapourizing unit by the second pipeline 222.Known means can be used in flow control means 221,
Seem to be coordinated with a valve module and the second pipeline 222.
Referring to Fig. 3, the vapourizing unit of the embodiment includes also a main body 230, is covered by insulation sleeve 210.Main body
230 have a upper surface 231 opposite with top 211, a lower surface 232 opposite with floor 213 and opposite with side wall 212
One outer surface 233.The upper surface 231 of first pipeline, 220 autonomous agent 230 upwardly extends, outside 222 autonomous agent 230 of the second pipeline
Surface 233 is laterally extended, and the lower surface 232 of 223 autonomous agent 230 of third pipeline extends downwardly.Such pipeline can be with main body 230 1
It is body formed.Through suitably arranging, there are a gap between an inner surface of the side wall 212 of main body 230 and insulation sleeve 210, have
Enough spaces are to provide a heating means 242.The heating means may be disposed at a periphery of main body 230, to inject heat
Main body 230.In one embodiment, the heating means is Resistant heating, such as setting heating coil in the periphery of main body 230
Surface.
In this embodiment, main body 230 includes an a first part 230a and second part 230b, i.e., main body and one on one
Lower main body.The first part 230a and second part 230b of main body 230 are combined together via a connection means, seem with multiple
Several screws 240 fix the two.It is passed through by screw for example, the contact surface of upper main body and lower main body can be provided with corresponding screw hole
It is inserted into.Upper main body 230a is in sunk structure in the side relative to upper surface 231, and lower main body 230b is relative to lower surface
232 side is in projective structure, and the sunk structure is mutually matched with projective structure, forms a contact interface of main body up and down.
An airtight means can be provided to seal the contact interface, such as provide one or more o-rings 241 in upper main body 230a and lower master
Between the contact surface of body 230b.
Upper main body 230a is provided with for a first passage 234 of received vector gas and one for receiving liquid charging stock
Second channel 235.First passage 234 is extended downwardly along the first pipeline 220 in a manner of convergent.Second channel 235 and first
The connection connection of channel 234, and obliquely upwardly extended from first passage 234.Second channel 235 passes through the flow control means
221, such as a needle valve, coupling is connected to the second pipeline 222.In one embodiment, the second pipeline 222 is horizontal pipeline, and the
Two channels, 235 opposite second pipeline 222 tilts 15 degree.Such design is to avoid liquid charging stock inverse by second channel 235
Stream.There is a confluence section at second channel 235 in the end of first passage 234, herein carrier gas and liquid charging stock
Intersection.In addition, lower main body 230b is provided with a third channel 236, extend along third pipeline 223.
Main body 230 has an inner wall 237.According to separable upper main body 230a and lower main body 230b, inner wall 237 is divided into
One inner wall 237a and the second inner wall 237b.In conjunction with when, the inner wall 237 of main body 230 defines a cavity (unnumbered), which has
An input terminal 238a for receiving one or more raw materials and output end 238b for gas to be discharged.The input terminal of cavity
238a is located at upper main body and is connected to first passage 234 to receive the mixed raw material for including carrier gas and liquid charging stock.Cavity
Output end 238b be located at lower main body and be connected to third channel 236 be discharged fully vaporization after mixed gas.It is mixed
Carrier gas and liquid charging stock start multistage vaporescence, wherein the stage after the input terminal 238a of cavity enters
It is caused by structure.
Refering to Fig. 3 to Fig. 5, fluid present invention vapourizing unit 200 includes also a stopper 250, and the chamber in main body 230 is arranged
In body, and cavity is thereby divided into one first cavity 239a and one second cavity 239b.First cavity 239a includes the input
It includes the output end 238b to hold 238a, the second cavity 239b.Stopper 250 has one or more poroid channels 251, such as Fig. 4
And shown in Fig. 5, thereby the first cavity 239a and the second cavity 239b is only capable of being interconnected by the poroid channel 251.According to
This is arranged, mixed carrier gas and liquid charging stock sequentially by the first cavity 239a, stopper 250, the second cavity 239b and
Third channel 236.Specifically, being the gas after carrier gas and liquid source gasification by third channel.Upper main body 230a, under
Main body 230b and stopper 250 can be made of same material, such as aluminium alloy.
Fig. 4 shows the longitudinal profile of the stopper 250 of the embodiment.Stopper 250 is in a disk, has a upper surface
252, a lower surface 253 and a side 254.Poroid channel 251 then extends between upper surface 252 and lower surface 253.Therefore,
And joining Fig. 3, the first cavity 239a is determined by the first inner wall 237a of upper main body 230a and the upper surface 252 of stopper 250
Justice, and the second cavity 239b is defined by the second inner wall 237b of lower main body 230b and the lower surface 253 of stopper 250.
The inner wall 237 of the embodiment is also specifically configured so that the first cavity 239a is extended in a manner of dissipating from input terminal 238a
The upper surface of stopper 250, and the second cavity 239b is that output end is extended in a manner of convergent from the lower surface of stopper 250
238b。
The liquid vaporization device of the embodiment includes also a fixing means, stopper 250 is fixed on main body 230
In cavity.And join Fig. 3 and Fig. 4, the side 254 of stopper 250 is being extended with a protrusion 255 with 252 the same side of upper surface, and
An inner wall of the upper main body 230a of main body 230 extends internally a recessed portion (not indicating), is configured and the protrusion 255
It is corresponding.The stabilization of stopper 250 is set to be accommodated in cavity by the matching of the protrusion and recessed portion.In other realities of the present invention
It applies in example, the modification about the protrusion and recessed portion is feasible for art technology person.
The upper and lower surface of stopper 250 is in a protuberance respectively, has a vertex 256, and the vertex 256 can be with respect to the side
Portion 254 or protrusion 256 protrude.In one embodiment, such as according to Fig. 4 sections, upper surface 252 and/or lower surface 253 are with vertex
Two lateral inclines centered on 256 are generally with 150 degree of angle.Such design can increase mixed gas and resistance
The contact area of lug-latch 250 thereby promotes vaporization efficency either in the first cavity 239a or the second cavity 239b.
Fig. 5 is the vertical view of Fig. 4, shows a plurality of poroid channels 251 in a symmetrical manner around vertex 256, and often
One poroid channel extends for cylinder.In other embodiments, poroid channel can be that rectangle extends.Protrusion 256 is on upper surface
A bulge loop, but in other embodiments, protrusion 255 may include the component of multiple separation.
Based on fluid present invention vaporizer, carrier gas will enter the liquid charging stock of the confluence section of first passage 234 first
Purging is to the first cavity 239a and carries out first time vaporization wherein.Then, mixed gas (includes the upper liquid not completely vaporized
Raw material) it reaches the upper surface 252 of stopper 250 and then flows into second of vaporization of the progress of poroid channel 251.Finally, mixed gas
Third time vaporization is carried out into the second cavity 239b.In the process, stopper of the present invention increases the length of gas flow paths, i.e.,
The opposite time for extending vaporization, it is ensured that liquid charging stock obtains fully vaporization.In some possibilities, by appropriately configured,
The implementation of one or more stoppers is also feasible.The structure of fluid present invention vapourizing unit also improves heat storage capacity, heat
It can be limited in around cavity, keep the branch of temperature uniform, contribute to vaporization efficency.The mixed gas fully vaporized becomes anti-
Gas is answered, the use for being used as film processing of the reaction cavity as described in Fig. 1 is transported to by third channel 236.
In addition, fluid present invention vapourizing unit also has the advantages that group is loaded onto.First, upper main body 230a can be inverted, and
O-ring is placed on together with stopper 250 according to the fixing means to the appropriate location of upper main body 230a.Utilize the screw hand
Lower main body 230b correspondences are bound to upper main body 230a by section.After the assembling for completing main body, main body rotation is ajusted, main body is made
230a is upward.The flow control means are inserted into the preset mounting holes of upper main body 230a.Then, sequentially installation heating hand
Section and the insulation sleeve.Finally, a connector is installed respectively, such as VCR connectors, until the pipeline.So far, fluid present invention vaporizes
Device substantially completes assembling.It, can be according to said sequence contrary operation about dismounting.
It will be apparent to those skilled in the art that many change and modification will become obvious.Those skilled in the art answer
The all such changes and modifications of solution should all be fallen in extensive spirit and scope in the above present invention.
Claims (15)
1. a kind of liquid vaporization device is configured to supply from a carrier gas supply source received vector gas and from a liquid charging stock
It gives and former receives liquid charging stock, which is characterized in that the liquid vaporization device includes：
There is one main body an inner wall, the inner wall to define a cavity, which has the input for receiving one or more raw materials
End and the output end for gas to be discharged；And
One stopper is arranged in the cavity of the main body, and the cavity is thereby divided into one first cavity and one second cavity,
In first cavity comprising the input terminal and second cavity includes the output end, which has one or more poroid logical
Road, thereby first cavity and second cavity are interconnected by the poroid channel.
2. liquid vaporization device described in accordance with the claim 1, it is characterised in that：The main body, which also has, is used for received vector gas
A first passage and a second channel for receiving liquid charging stock, the first passage and the second channel are connected to the cavity
Input terminal.
3. liquid vaporization device according to claim 2, it is characterised in that：The second channel includes the input from the cavity
End tilts the section extended upwards.
4. liquid vaporization device described in accordance with the claim 1, it is characterised in that：The main body includes a first part and one second
The first part of part, the main body is combined together with second part via a connection means.
5. liquid vaporization device described in accordance with the claim 1, it is characterised in that：The stopper has a upper surface and a following table
The poroid channel in face, the stopper extends between the upper surface and the lower surface.
6. liquid vaporization device according to claim 4, it is characterised in that：The stopper has a upper surface and a following table
Face, an inner wall of the wherein first part of the upper surface and main body of the stopper form first cavity, and the stopper
Lower surface and an inner wall of the second part of the main body form second cavity.
7. liquid vaporization device according to claim 6, it is characterised in that：First cavity is from the input terminal to the blocking
The upper surface of device is extended with diffusion mode.
8. liquid vaporization device according to claim 6, it is characterised in that：This is from two cavitys from the lower surface of the stopper
It is to extend in a convergent way to the output end.
9. liquid vaporization device described in accordance with the claim 1, it is characterised in that：The stopper has a upper surface, a following table
The upper surface of face and the side extended between the upper and lower surface, the stopper has a vertex, and the vertex phase
The side is protruded.
10. liquid vaporization device described in accordance with the claim 1, it is characterised in that：It further includes and connects with the second channel of the main body
The flow control means connect, to control the liquid charging stock flow of the second channel.
11. liquid vaporization device described in accordance with the claim 1, it is characterised in that：A fixing means are further included, to by the resistance
Lug-latch is fixed in the cavity of the main body.
12. liquid vaporization device according to claim 11, it is characterised in that：The fixing means include from the stopper
The protrusion that side extends and the recessed portion to extend internally from the inner wall of the main body, pass through the protrusion and the recessed portion
Cooperation makes the stopper be located in the cavity.
13. liquid vaporization device described in accordance with the claim 1, it is characterised in that：A heating means is further included, the master is set to
One periphery of body, thermal conductivity is led to the main body.
14. liquid vaporization device described in accordance with the claim 1, it is characterised in that：Further include for by the vapourizing unit with
One insulation sleeve of ambient environment.
15. a kind of semiconductor processing system, which is characterized in that include：
One reaction cavity has the spray equipment for providing reaction gas；And
One liquid vaporization device, including：
There is one main body an inner wall, the inner wall to define a cavity, which has the input for receiving one or more raw materials
End and the output end for gas to be discharged, the output end are connected to the spray equipment for being coupled to the reaction cavity；And
One stopper is arranged in the cavity of the main body, and the cavity is thereby divided into one first cavity and one second cavity,
In first cavity comprising the input terminal and second cavity includes the output end, which has one or more poroid logical
Road, thereby first cavity and second cavity are interconnected by the poroid channel.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810071252.1A CN108277477B (en) | 2018-01-25 | 2018-01-25 | Liquid vaporizer and semiconductor processing system using the same |
| TW107113431A TWI661487B (en) | 2018-01-25 | 2018-04-20 | Carburetor and semiconductor processing system using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810071252.1A CN108277477B (en) | 2018-01-25 | 2018-01-25 | Liquid vaporizer and semiconductor processing system using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108277477A true CN108277477A (en) | 2018-07-13 |
| CN108277477B CN108277477B (en) | 2020-08-28 |
Family
ID=62804986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810071252.1A Active CN108277477B (en) | 2018-01-25 | 2018-01-25 | Liquid vaporizer and semiconductor processing system using the same |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108277477B (en) |
| TW (1) | TWI661487B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113533600A (en) * | 2021-08-09 | 2021-10-22 | 江苏鑫华半导体材料科技有限公司 | Trichlorosilane detection pretreatment method and device, and trichlorosilane detection method and device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1458669A (en) * | 2002-05-13 | 2003-11-26 | 日本派欧尼株式会社 | Gasifier and gasifying supply device |
| CN101006197A (en) * | 2005-01-14 | 2007-07-25 | 东京毅力科创株式会社 | Vaporizing device and treatment apparatus |
| CN101983418A (en) * | 2008-04-01 | 2011-03-02 | 株式会社富士金 | Gas supply device equipped with carburetor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5141141B2 (en) * | 2007-08-23 | 2013-02-13 | 東京エレクトロン株式会社 | Vaporizer, source gas supply system using vaporizer, and film forming apparatus using the same |
-
2018
- 2018-01-25 CN CN201810071252.1A patent/CN108277477B/en active Active
- 2018-04-20 TW TW107113431A patent/TWI661487B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1458669A (en) * | 2002-05-13 | 2003-11-26 | 日本派欧尼株式会社 | Gasifier and gasifying supply device |
| CN101006197A (en) * | 2005-01-14 | 2007-07-25 | 东京毅力科创株式会社 | Vaporizing device and treatment apparatus |
| CN101983418A (en) * | 2008-04-01 | 2011-03-02 | 株式会社富士金 | Gas supply device equipped with carburetor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113533600A (en) * | 2021-08-09 | 2021-10-22 | 江苏鑫华半导体材料科技有限公司 | Trichlorosilane detection pretreatment method and device, and trichlorosilane detection method and device |
| CN113533600B (en) * | 2021-08-09 | 2022-02-22 | 江苏鑫华半导体材料科技有限公司 | Trichlorosilane detection pretreatment method and trichlorosilane detection method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108277477B (en) | 2020-08-28 |
| TW201933483A (en) | 2019-08-16 |
| TWI661487B (en) | 2019-06-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20070194470A1 (en) | Direct liquid injector device | |
| CN105624646B (en) | It is eliminated by the valve manifold blind pipe of reentrant flow path | |
| JP2006193801A (en) | Vaporizing device and treatment apparatus | |
| JP2004140328A (en) | Gas supply system and treatment system | |
| DE60219343D1 (en) | TUNABLE MULTI-ZONE GAS INJECTION SYSTEM | |
| US9334566B2 (en) | Multi-tray ballast vapor draw systems | |
| JP2003514992A (en) | Apparatus and method for transporting precursor vapor from low vapor pressure liquid source to CVD chamber | |
| CN102677018A (en) | Thermal treatment apparatus | |
| CN104005006A (en) | Injector and upper cover plate assembly applied to semiconductor equipment | |
| US11708636B2 (en) | Reaction gas supply system and control method thereof | |
| CN108277477A (en) | Liquid vaporization device and the semiconductor processing system for using the liquid vaporization device | |
| KR20090059115A (en) | Liquid material vaporizer | |
| KR101753758B1 (en) | Vaporizer and substrate disposition apparatus including the same | |
| US20130276703A1 (en) | Gas Treatment Apparatus with Surrounding Spray Curtains | |
| JP4971376B2 (en) | Gas injection module | |
| CN100414674C (en) | Gas reaction system and semiconductor processing apparatus | |
| JP6335223B2 (en) | Vaporizer | |
| CN101511460A (en) | Direct liquid injector device | |
| KR100455224B1 (en) | Vaporizer | |
| KR20100124383A (en) | Apparatus for supplying precursor and system for depositing thin film with the same | |
| CN117051376A (en) | System, apparatus and method for thin film deposition | |
| CN211170883U (en) | Gas supply system | |
| KR20180027780A (en) | Vaporizer | |
| CN113474484A (en) | Multi-channel separator spool | |
| CN105695957A (en) | Air inlet device and semiconductor processing equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: No.900 Shuijia, Hunnan District, Shenyang City, Liaoning Province Patentee after: Tuojing Technology Co.,Ltd. Address before: No.900 Shuijia, Hunnan District, Shenyang City, Liaoning Province Patentee before: PIOTECH Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |