CN101511460A - Direct liquid injector device - Google Patents

Direct liquid injector device Download PDF

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Publication number
CN101511460A
CN101511460A CNA2007800126987A CN200780012698A CN101511460A CN 101511460 A CN101511460 A CN 101511460A CN A2007800126987 A CNA2007800126987 A CN A2007800126987A CN 200780012698 A CN200780012698 A CN 200780012698A CN 101511460 A CN101511460 A CN 101511460A
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China
Prior art keywords
manifold
precursor
carrier gas
described device
communicated
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CNA2007800126987A
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Chinese (zh)
Inventor
J·B·德杜特尼
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ASML US Inc
Aviza Technology Inc
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ASML US Inc
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Abstract

A device for mixing, vaporizing and communicating a precursor element in a highly conductive fashion to a remote processing environment. A supply meter admits a precursor liquid according to a piezo controlled valve, which communicates therewith for controlling flow into a mixing manifold. A vaporizer manifold in cooperation with a carrier gas supply provides a carrier gas for contemporaneous delivery into the mixing manifold. A vaporizing component having at least a heating element in communication with the mixing manifold, in cooperation with a mixing (frit) material provided in the vaporizer body, causes a phase change of the liquid precursor into a vapor output. Delivery of the vapor outlet occurs along at least one high conductance run/vent valve located downstream from the vaporizing body, typically built into the vaporizer manifold architecture, and provides for metering of the vapor into a remote process chamber.

Description

Direct liquid injection apparatus
The cross reference of related application
The application requires the U.S. Provisional Application No.60/774318 that submits on February 17th, 2006 and the priority of the U.S. Provisional Application No.11/676346 that submits on February 19th, 2007, and it is for reference that their content is incorporated this paper into.
Technical field
The precursor that the present invention relates generally in the semiconductor processing device sprays, particularly a kind of Liquid precursor or precursor liquids solution jet, and it for example is used in and carries out ald (ALD) to being contained in the indoor silicon wafer of respective handling.
Background technology
It is that matrix repeatedly, alternately is exposed to one or more independent gas chemistry precursor/reactants that ald (ALD) is handled.Current with or many precursors of just having brought into use only with liquid or solid-state the existence.A total physical characteristic of many these precursors is a low vapor pressure, and the equilibrium at room temperature gas phase that therefore relies on material can't satisfy the gas of feed consistency even as big as the processing apparatus wafer.Must apply external energy and make material phase transformation become gas (steam) phase, handle required enough concentration to provide.This can and use the foaming method to realize by heating under liquid state.But how much system temperature is conditional if being elevated to, because (generally) also has other composition in the chemical substance transfer system, comprises chemical substance itself, and it must not have the temperature extremes that surpasses.Therefore, in order to generate the enough gas of concentration, use the method for the another kind of evaporating liquid that is sometimes referred to as direct liquid injection from these low vapor pressure materials.Many these type systematics are arranged on the market, but the great majority in these systems are applicable to continuous, ongoing operation that chemical vapor deposition (CVD) is required.Minority system is designed to use short pulse (dosage) in ALD, but theirs is integrated still limited.Because the low dose of requirement of ALD, and the output of the dosage of system needs simulation not have the real-time control signal of delay, need satisfy following feature and realize optimum performance:
-locate restricted heating at metering valve (phase transformation valve) to Liquid precursor, preventing the decomposition of chemical substance, this chemical substance since the low dose of characteristic of this process will consume with utmost point slow rate,
Finite volume in the-metering valve, seat be to the seat mode, preventing the valve pumping liquid,
Contact with the limited surface of liquid after metering valve before the-evaporation (at utmost reducing the surface transport of liquid after valve),
The big conductibility of-device, so that minimum as far as possible at metering (phase transformation) valve place by the pressure that the process chamber pump causes,
Direction did not change when-liquid was carried to evaporimeter, and this makes liquid leave the carrier gas air-flow and attached on the pipeline border surface.
As previously mentioned, existing many systems that the Liquid precursor that can be attached in the ALD system is evaporated of being provided for, but the design of all these systems has nothing in common with each other, and do not have common basis, all is a little individual components.This is in the system of being integrated into being challenge, and this system requirements is provided with valve, menifold at upstream and downstream, monitor etc., simultaneously whole element kept heating, is being condensate on the pipe surface before the process chamber to prevent steam.
Because the specificity of precursor, the price of many precursors is very expensive, therefore extremely needs to cut the waste as far as possible.Although general utilization and operation/bleed strategy transmits dosage in the following manner
A) provide first path of leading to fore line, establish/to stablize desired concn and flow;
B) in preset time, provide second path of leading to process chamber, to transmit dosage, then
C) first path is got back in guiding, returns fore line,
But still need at utmost reduce the waste of fore line and any possible consumption between the termination dosage.
Therefore, need a kind of precursor injector with above-mentioned feature.In addition, need the injector that the contact of a kind of energy limiting surface, time of delivery, remaining liq store, the heating precursor also can provide the high conductance path of leading to process chamber.
Summary of the invention
The invention discloses and a kind ofly be used to mix, evaporate precursor component and the device of this precursor component high conductance ground and teleprocessing environmental communication.Particularly, the present invention is specially adapted to handle operation relevant ald (ALD) or chemical vapor deposition (CVD) technology with for example silicon wafer.
Basetray or other proper supporting structure are provided, are fixed for introducing the supply meter of precursor liquids on it according to relevant pressure.The piezoelectricity control valve is communicated with this supply meter, is used to control the flow that flows into this precursor liquids of mixing menifold.Vaporizer component manifold and carrier gas supply are cooperated, and are provided for being conveyed into simultaneously the carrier gas of this mixing menifold.
Additional features comprises evaporation component, and this evaporation component has at least one heating element heater, this heating element heater be communicated with this mixing menifold and with this vaporizer body in the composite material cooperation, make this Liquid precursor be phase-changed into steam output.Transmit steam output along at least one pair of the high conductance operation/drain valve that is positioned at evaporation main body downstream, this high conductance operation/drain valve generally is structured in the vaporizer component manifold structure, thereby metering supplies to the teleprocessing chamber.
Additional features comprises provides at least one to be communicated with vaporizer component manifold to be used to transmit the base manifold of steam.A plurality of base manifold can be set be communicated with vaporizer component manifold, at least one base manifold also enters pipeline as the diluent gas of further mixed vapour.
Second heating element heater is set to be communicated with before sending the mixing menifold to the carrier gas supply.Described heating element heater all also can comprise the electric coil resistance heater that is associated with the chamber, and at least one in carrier gas and the prevapourising precursor/admixture of gas is by this chamber.
Vaporizer manifold and bubbler manifolds cooperation also can be set, to be used for precursor than low-vapor pressure.At least one pair of, generally be manyly the operation/drain valves that form in groups are installed in described parts menifold (or optionally bubbler manifolds) go up and evaporate the main body downstream portion and be communicated with.
The other feature relevant with mixing menifold comprises: it has given shape and size, and comprise annular channels, this annular channels with Liquid precursor with and the matching structure of the related same circle of crossover manifold be communicated with, the annular shape that is formed on the cooperation gap between annular channels and the circular matching structure allows carrier gas to enter and liquid is involved in the composite material, this composite material comprises the heating glass material that is positioned at the below, and carrier gas does not contact the wall relevant with described evaporation component.Crossover manifold can comprise the path on the length direction equally, and it extends to the described annular channels that is communicated with carrier gas inlet.
Another disclosed change example of the present invention can comprise being used for mixing with the biliquid of evaporating at least a particular fluid precursor (or a pair of different precursor) sprays supply meter, piezo electric valve and bubbler manifolds.Become example according to this, two outlets, three base manifold are installed, the discrete outlet that it has two kinds of steam that are used to generate has common fore line and connects.
Description of drawings
Describe the present invention in detail below in conjunction with accompanying drawing, similar parts are represented with similar label in the accompanying drawing, in the accompanying drawing:
Fig. 1 is the stereogram that the first direct liquid of list that becomes example sprays (DLI) device according to the present invention, for example can be combined in the ald relevant with silicon wafer production (ALD) process;
Fig. 2 is the cross-sectional view of the DLI device of Fig. 1, and the feature that illustrates for example is useful on provides the menifold of carrier gas inlet structure, the carrier gas/liquid surface, the heating element heater that are communicated with the liquid evaporator of piezo electric valve control and the high conductance path steam (vapor) outlet of being controlled by a pair of operation/drain valve;
Fig. 3 is the cross-sectional perspective view of piezoelectricity control evaporator part shown in Figure 2;
Fig. 3 A is the cross-sectional perspective view of analysing and observe of evaporator part shown in Figure 3;
Fig. 3 B illustrates and is assemblied in the piezoelectricity mixing valve that loads on the plate;
Fig. 3 C is another cross-sectional perspective view of the loading manifold relevant with the carrier gas annulus that surrounds liquid-inlet;
Fig. 3 D is the cutaway sectional view of Fig. 3 C;
Fig. 3 E is the cross-sectional perspective view of crossover manifold shown in Figure 1, and it is communicated with it below Fig. 3 C imported equipments and parts;
Fig. 3 F is the sectional block diagram of crossover manifold shown in Fig. 3 E;
Fig. 4 is the stereogram of evaporator part base manifold shown in Figure 1;
Fig. 4 B is the cross-sectional perspective view of analysing and observe of menifold shown in Figure 4;
Fig. 5 is the stereogram of a kind of form of bubbler parts menifold;
Fig. 5 A is the cross-sectional perspective view of analysing and observe of bubbler parts menifold shown in Figure 5;
Fig. 6 is the stereogram of vaporizer component manifold shown in Figure 1;
Fig. 6 B is the cross-sectional perspective view of analysing and observe of vaporizer manifold shown in Figure 6;
Fig. 7 is the installation diagram of heating chamber sub-component, and this heating chamber sub-component is used to help carrier gas/low vapor pressure Liquid precursor mixture to be phase-changed into high conductance outlet steam;
Fig. 7 A is the exploded view of Fig. 7 heater subassembly;
Fig. 8 be single directly liquid spray (DLI) device another become the stereogram of example, the single bubbler parts menifold of being installed that is communicated with jointly with corresponding a pair of base manifold is shown;
Fig. 9 is the stereogram that another two directly liquid that become example spray (DLI) device according to the present invention;
Figure 10 is the rotary stereo figure of device shown in Figure 9;
Figure 11 be for example shown in Figure 9 according to the present invention another son become example two outlet manifold block stereogram, the central co-route that leads to corresponding fore line is shown and is used for the first and second dilution imports that corresponding first and second kinds of liquid spray precursor;
Figure 11 A is the cross section view of manifold block shown in Figure 11;
Figure 12 is another two outlets of example, the stereogram of three base manifold DLI of becoming according to the present invention;
Figure 13 is the cross-sectional view of Figure 12, and the bubbler manifolds that is arranged on Figure 12 three menifold structures top is shown.
The specific embodiment
With reference to figure 1, the direct liquid of list that shows the first change example according to the present invention sprays the stereogram of (DLI) device 10.As previously mentioned, DLI device of the present invention generally is incorporated in the ald relevant with silicon wafer production (ALD) process, and this process for example can be carried out in the semiconductor process chamber (not shown).As hereinafter describing in detail, the DLI evaporator assemblies also can adopt in other is used, and is not limited to the formation and other critical semiconductor and other relevant commercial Application of chemical vapor deposition (CVD), high quality film.
In conjunction with the cross section view of Fig. 1 referring to Fig. 2, device 10 is structured on the basetray 12, and this basetray 12 has the configuration of general plane shape and can support each parts that is used for evaporating with high conductance transmission liquid precursor.These parts are here mentioned synoptically, mainly are at they structural relations each other, below in conjunction with subsequently accompanying drawing they are elaborated.
As mentioned above, provide a pair of base manifold 14 and 16 (being generally machined aluminium), they are supported on the ceramic insulating layer 18, are fixed on the base 12 with bolt or alternate manner then and (see securing member 20,21,22 and 24 in Fig. 2 cutaway view).Vaporizer component manifold 26 is communicated with a plurality of high conductance valves, for example paired operation valve 34,32 as shown in the figure and drain valve 28,30.Carrier gas inlet 36 is associated with the far-end of vaporizer component manifold 26, and communicates with the outlet 37 towards the top in the menifold 26, and this describes in detail hereinafter.The vaporizer body downstream is provided with at least one high conductance operation/drain valve 30,34, to be used for that the precursor mixture of carrier gas/heating is dosed into process chamber.Preferably, the pipeline between vaporizer body and the process chamber has the shortest length and minimum angular deflection.Although this pipeline shown in the accompanying drawing extends perpendicular to the base of vaporizer body, should understand pipeline and also can be various angles and extend, comprise downwards and roughly extend abreast with the axis of vaporizer body, preferably extend with one heart with the vaporizer body axis.
Other parts of this device also comprise a pair of heating ring array component 38 and 40 that is also referred to as heating chamber, and they are used in to the evaporation step of liquid/gas mixture preheating from gas and gas/liquid interface (40 place) that import 36 (38) is introduced.Crossover manifold 42 upper supports have piezoelectricity mixing valve assembly 44, and this piezoelectricity mixing valve assembly is used for controlling by liquid feeding controller 46 (for example liquid mass flow meter) through the relevant liquid stream that loads menifold 48 introducings.
Liquid supply import 50 and selected Liquid precursor cooperation, precursor liquids mass flowmenter 46 is supported on roughly on the support of U-shaped (see among Fig. 1 52), this support is installed on the basetray 12 (sees other installed part 54 and 56, they engage with the angled bottom of support 52, and relative with the upper level edge surface that is supporting parts 46).Liquid mass flow meter 46 also is used for monitoring the upstream liquid flow relevant with Liquid precursor, and in crossover manifold 42, mix (introducing) carrier gas synergistically with the adjusting aspect of piezoelectricity mixing valve assembly 44 through import 36, the carrier gas of Hun Heing is provided to evaporimeter heated glass material from crossover manifold 42 then, this frit is not shown, is arranged in second heating chamber 40 that directly is communicated with the crossover manifold outlet but should understand it.
Refer again to the cross-sectional view of the DLI device of Fig. 2 in conjunction with Fig. 3-3F, attachable joint 58 is provided, be used to be communicated with the Liquid precursor of introducing from feeding controller 46 by outlet line 60 (see figure 1)s, this attachable joint 58 generally is screwed rotating lock(ing) bolt.L shaped fluid transfer line 61 is guided to this Liquid precursor the manifold 48 that is associated with piezoelectricity control valve 44.Particularly, can see the most clearly from Fig. 3 C and 3D, manifold 48 has annular or circular path, the Liquid precursor (from Fig. 3 C cutaway view, can see the most clearly) that this path makes transmission and crossover manifold 42 be that circular distribution structure mutually (seeing the phase distribution structure in Fig. 3 A cutaway view) is communicated with equally.Shown in Fig. 3 A cutaway view, this annulus be meant with mix that menifold is associated in abutting connection with ring segment 62 and be associated with crossover manifold in abutting connection with ring segment 64, this annulus is assemblied in by cross-over connection fully and loads on the plate and form.Liquid flows out the top of flaring exit, mixes with concentric carrier gas stream, and along the inner concentric delivery pathways to the heated frit in below.Shown in Fig. 3 C and 3D, be provided with O shape ring groove 63.The liquefied gas mixture flows out conical tip 65 (seeing Fig. 3 D cutaway view), flows into horizontal annular district (see among Fig. 3 E 65 '), is involved in the centre gangway by carrier gas, and this centre gangway is introduced position between menifold and the crossover manifold referring to DLI.
Loading menifold 48 is all-metal seat-Seal Design, and the O shape ring groove that loads plate (liquid is sent to valve group zone from flow controller in this plate) top is designed for lays the all-metal sealing.The substantially flat surface of valve bottom for having the very high quality surface smoothness.It is separately connected to bolt and loads on the plate top, forms and loads valve module.Also have two to lead to the apertures that load the plate top according to this loading plate of a kind of required design, thereby this upper surface that loads plate is essentially valve seat, this upper surface for the high smooth surface of the flat fineness that matches of this valve.Liquid flows through in the zone between these two mated surface.When not switching on, piezo electric valve is in contraction state (seeing Fig. 2 cutaway view), liquid can go out from central orifice flow, flows to the conical tip that is formed in the annulus that loads between plate bottom and the crossover manifold top, is carried by carrier gas at this to be transported down in the evaporimeter frit.During the energising of this valve, the length variations of crystal (growth), thus cause valve bottom deflection, so just blocked the path between two apertures, thereby the method for adjusting fluid flow is provided.
The annular shape of fit clearance makes carrier gas to flow into and liquid is involved in the heated frit in below, and the wall around not contacting.Crossover manifold 42 has the path 66 on the length direction equally, this path 66 extends to circular match/ mix position 62 and 64, this path 66 communicates with carrier gas inlet 36 through coil heating chamber 38, and this coil heats chamber 38 is used in selected carrier gas and the mixed position that is incorporated in before being sent to secondary heater 40 of Liquid precursor the inlet temperature of this selected carrier gas being elevated to suitable temperature.Further supply helps to flow out from the crossover manifold steam (vapor) outlet generally is the liquid/required heat energy of carrier gas mixture phase transformation of lower pressure for secondary heater 40.The coarse filtration matrix provides in vaporizer body 40 and has been used to allow the required surface area that conducts heat between the precursor in heating element heater and the vaporizer body.The material of filter matrix generally is chosen under the condition in vaporizer body not and the precursor chemically reactive.Matrix material comprises that for example vitreous silica, aluminium oxide (comprise on the market and being called Known product, this is a kind of foam aluminium type material), graphite and sheet metal.It should be understood that and wish in some cases before introducing process chamber, the precursor chemical transformation to be become active, unsettled species, and catalyst selectively is set in filter matrix to bring out required precursor chemical transformation.In one application, can use raw glass material (as the back with reference to as described in Fig. 7) to be provided at the required additional surface area of evaporation in second heating clamber 40, but should be enough thick, be because the pressure oscillation that the related valves exit takes place causes so that the required major part of phase transformation drives energy.Also thin filter matrix can be set in upstream heated cavity 38, with improvement heating to carrier gas before flowing into crossover manifold.
Except coiled nozzle heating element heater 38/40, can the structure that be used for receiving cartridge heater and so on be set in bubbler, evaporimeter and base manifold, to keep the required temperature of whole assembly, particularly prevent the temperature that condensation is required.Use cartridge heater further to make the easier realization of heating in the boring in these parts, this is to be difficult to realize when using discrete parts.
Further with reference to figure 7 and 7A, they are the assembly drawing and the exploded view of selected heating chamber sub-component.For example the front is mentioned with regard to 38, and the heated cavity block of 3D shape is provided, and has recessed circular configuration in its end face, sees annular concave seat 68, is supported with the central rods 70 that extend basically in this dimple.Resistance coil heater (or nozzle heater) is provided as substantial cylindrical sleeve 72, is enclosed within on the annular outer surface of the post 70 that is associated with this exocoel module to its coupling.The high conductivity coil part that is contained in the heating chamber is powered by the electrical lead 74 of rule, electrical lead 74 matches with the resistance wire that is embedded in this coil block (promptly roughly in Fig. 7 A shown in 75), the surface of this high conductivity coil part and insertable inner sleeve 72 fuse (seeing position 76), thereby the thermal source that electricity is generated (not shown, but can be provided by high conductive resistance cable in a kind of change example) sends the centre gangway 78 that carrier gas is passed through to.
Further, the gas of O-ring seals 80 to finish this assembly and to heat via 66 circulations of crossover manifold path can be set referring to Fig. 7 A exploded view.Frit element 82 slips into downwards in the post 70, thereby can decide to install thin frit or raw glass material according to the upstream/downstream position.The structure of secondary heater assembly 40 is identical therewith basically with working method, is phase-changed into outlet steam to help low pressure carrier gas/precursor liquids.The steam (see among Fig. 2 84) that leaves secondary heater leads to corresponding operation valve 32,34 and drain valve 28,30 through the high conductance path flow, be passed to arbitrary base manifold 14/16 again, be passed to the wafer processing chamber (not shown) then or be passed to fore line through device 136 shown in Figure 10.
Referring now to Fig. 4 and 4B,, the feature of base module menifold 14 shown in Figure 1 and 16 will be further specified.Particularly, for example be labeled as 16 and first menifold 16 that is illustrated among Fig. 4 can comprise inlet pipeline (front is mentioned but be not shown), it can be used for for example diluting and can selecting argon gas that heats and so on.Two base manifold are necessary, because one provides the path of leading to process chamber, another provides the path of leading to fore line.Shown in module support two vaporizer component manifold being used for two kinds of species, should also be understood that obsolete import can be used cap closure according to change example shown in Figure 1, perhaps module can shorten as required to be applied to the change example of single DLI runner.
In the typical case uses, use a pair of this generic module 14 and 16 in mode side by side, and their uses one outlet jointly, flow to process chamber for two kinds of different plant species.In this application, module (for example 14 or 16) via two parallel valves (a plurality of valves represent with outlet 88,90,92 and 94 in Fig. 4 and 4A, they from vertically and length direction path 96 (Fig. 4 A) connection of extending) guide every kind of gas.Be extended with a passage 98 respectively from module 16 every sides, passage 98 is not communicated with, they define the installation position of the optional cartridge heater (not shown) that is used to heat, it will also be appreciated that passage 98 can come the selectivity cap closure according to the combination of the precursor of the inlet gas of employed heating or evaporation.
Referring to Fig. 5 and 5A, show bubbler parts menifold 100, itself and the vaporizer component manifold cooperation of before having represented with 26 (Fig. 6 and 6A), special in another kind of single DLI device shown in Figure 8.Bubbler 100 among Fig. 5 and 6 and evaporator part 26 menifolds all use two pairs of valves, see the receiver hole position 102,104 of bubbler parts menifold 100 and the receiver hole position 106,108 of vaporizer component manifold 26, so that gas is directed to following base manifold (14 and 16) and is directed to the process chamber (not shown) or fore line path (for example through import 86).The vertical passage of bubbler manifolds 100 illustrates at 110 places, and it has feeding channel 112 and 114 (Fig. 5 A), so that each is communicated with outlet position (this figure is not shown) valve import 102 and 104.The bubbler import 116 of leading to module also is shown.
The steam of these two kinds of modules is provided to these valves through four major paths, and these four major paths lay respectively at the center of four less bolt hole array.As shown in the figure, the outlet of valve eccentric setting towards the pair of bolts hole.These outlets are communicated with the below base manifold then.Because the complexity in the path of base manifold is led in acquisition downwards, so one group of valve is directed in one direction, and another group valve must be directed on other direction.It shall yet further be noted that two operation valves all use the valve with two installation orientations, the right situation of fore line also is like this.The inner passage that is used for vaporizer component manifold 26 illustrates at 118 places, and it has feeding channel 120 and 122 (Fig. 6 A), and so that each is communicated with corresponding outlet valve import 106 and 108, this corresponding outlet is communicated with aforementioned heater/evaporation stage 40.124 is the import from evaporimeter to these parts, should also be understood that steam leaves by the same eccentric orfice that is communicated with these valves.
Should be understood that vaporizer/bubbler manifolds parts (26 and 100) are used interchangeably, this depends on the quantity of the needs and the employed precursor of employed precursor.The same with base manifold 14 and 16, the aluminium that vaporizer/ bubbler manifolds 26 and 100 usefulness are suitable, steel or machined raw material are made, and wherein are drilled with passage, weld stopper then in the passage and form airtight inner passage.
Use paired high conductance valves, to create the path of the maximum as far as possible conductance that returns towards evaporating point, evaporating point or evaporation frit zone perhaps are space, bubbler tank top under the situation of bubbler.These in Fig. 8 example, be shown valve to 126,128 and valve to 130,132, wherein valve links with the position 102 of bubbler manifolds 100 (from module intersect the passage of inside upward to the valve import) and 104 (passing the passage that module is left the below base manifold from this valve) to 126,128, and valve to 130,132 with the position 106 of vaporizer manifold 26 (from module intersect the passage of inside) and 108 upward to the valve import (from this valve pass module leave below the passage of base manifold) link.It shall yet further be noted that two menifolds 26 are different with the passage between 100 so if use bubbler manifolds at different directions on base manifold 14 and 16.It is important being illustrated in the large aperture that Fig. 8 becomes the corresponding high conductance valves in the example because these valves to tend to be the limiting factor of gas path conductance, and because have only minimum stroke during the work of common valve seat.Although not shown, should also be understood that heater cable can be connected with vaporizer manifold 26 or bubbler manifolds 100, with help heating and evaporation carrier gas relevant and/or Liquid precursor with ALD program subsequently one or both of.
Fig. 8 installs the stereogram that another becomes example for the direct liquid of list sprays (DLI), and single bubbler module 100 of cooperating with vaporizer manifold module 26 is shown, and they are communicated with corresponding a pair of base manifold 14 and 16 jointly.Fig. 8 repeat to illustrate many with originally become example and describe identical parts at Fig. 1.For example, base manifold 16 has diluent gas (for example argon gas) import 86, and another import 134 is arranged on the corresponding base manifold 14, and this another import 134 is used to connect corresponding fore line (not shown), and this fore line for example may extend into process chamber.
With reference now to Fig. 9 and 10,, 136 the first and second rotary stereo figure are installed in the two directly liquid injections (DLI) that show another change example according to the present invention.Identical parts represent that in the mode that repeats (for example fluid inlet and adjusting menifold are represented with 46 and 46 ' at the label that Fig. 9 becomes in the example, two have been adopted to become in the example shown in being illustrated in), it is identical with the operation principle that single DLI of earlier figures 1 becomes example that this becomes example, just spray relevant parts and revised, so that two kinds of DLI evaporation of liquid with the DLI of precursor.The two DLI changes difference routine and that the change of Fig. 8 list DLI device is routine that it shall yet further be noted that Fig. 9 is: bubbler manifolds 100 is alternative by the vaporizer manifold 26 of duplicating.
Figure 11 and 11A are two stereogram and the cutaway views (it has replaced a pair of base module 14 and 16) that export the change example of manifold block 138 that become example according to for example another son of the present invention shown in Figure 9.The base block design of revising comprises standard base manifold (central authorities) module 140, and it is communicated with a pair of laterally projecting module 142 that is arranged in its relative both sides and 144.Central module 140 has common foreline path 146 (should understand this outlet and equally also can be positioned at another opposite end, supplying purging gas when needing). Second manifold block 142 and 144 has present dilution gas inlets 148 and 150 respectively, and their the relative port of export (152 and 154) is communicated with the precursor species of the first and second final evaporations into process chamber (for example carrying out ADL, CVD or required processing operation at process chamber) respectively.156 and 158 (seeing Figure 11) are for leading to the import of #1 species of module 140 and 142, and 160 and 162 imports for the #2 species that lead to module 140 and 144.
Figure 12 is another two outlets that become example, the stereogram of three base manifold DLI164 according to the present invention.Become in the example at this, the base manifold in this pair DLI device is modified to the son that comprises Figure 11 and 11A and becomes example, and evaporimeter and steam module assembly are staggered to be installed to allow.In conjunction with as described in Figure 11 A, this makes two kinds of steam that produced that discrete outlet be arranged as the front, and they have common fore line and connect.In this application, use discharging-operation-vent type of gas to transmit, and do not worry whether two kinds of precursors mix in common foreline (still 146).Other application imagination be in each DLI supply, to use same precursor, this send the pipeline relative restrictions to decide on required precursor quantity and the patrilineal line of descent with only one son in each generation when generating requirement steam.In this class is used, the increase of the steam that is generated usually thereupon build-up of pressure increase, reach the pressure that condensation can take place, therefore have can provide two alternately the abilities of steam generator be favourable, if their conflicts mutually.With reference to Figure 13, be another cross-sectional view of Figure 12 at last, the vaporizer manifold 26 and 26 ' on the three base manifold structural top that are arranged at Figure 12 is shown, as shown in the figure, vaporizer manifold 26 and 26 ' is supported on the basetray 12 alternately.
The others that will note about design of the present invention comprise that evaporimeter itself is included in the parts of two heating chambers, crossover manifold and loading valve module.These parts can and really be used for guiding the modular surface of vapor stream that the shared identical installing hole pattern of valve is installed.Evaporimeter can directly be assemblied on the same industry standard menifold at valve place, and in fact with by many third parties provide, all be that hand-operated valve, pneumatic operated valve, filter, adjuster and other parts that are designed on industrial standard how much platforms are shared identical installation interface.Its advantage is: this evaporimeter can be integrated in these other parts.And having kept advantage compact to design, this is a factor in the formation of modularization method of surface mounting.Also prediction is, under the situation that does not depart from the scope of the invention, other industry standard substrates can replace these parts and base manifold, and this factor makes design of the present invention be better than other known design of the prior art greatly.
About liquid controller, the present invention has imagined use digital liquid mass flow controller, and wherein control valve is combined in and loads in the valve module (among Fig. 3 C 48), with the fluid flow of control Liquid precursor.This mass flow controller (promptly 46) is digital structure, if thereby when giving set point, it stores the voltage signal that control valve applies in memory, and when the set point that further gives to be stored, it will be leapt to the threshold voltage of this storage and use pid algorithm to begin continuous control.This scheme makes and can jump to this set point as quick as thought, and causes stable flowing in the half second time of this set point sending.This is a distinct advantages, because the user can make it be in zero set point in ALD, and till just before needs transmit required precursor chemical, thus the waste minimum of discharging.The use of control device (for example control valve) is except only with analog form or only use analog-and digital-sensing simultaneously and control electronic device with also comprising the digital form.Other Consideration comprises and omits the fluid flow control device and only use valve that no matter be pneumatic operated valve, magnetic valve or piezo electric valve, liquid is in known pressure, and further using the valve time of opening is the unique variable that the amount of fluid of evaporimeter is introduced in control.
Therefore, the present invention can be used to carry and the output precursor to semiconductor process chamber.This injector device (menifold 46 and piezoelectricity control valve 44) but limiting surface contacts, the storage of time of delivery, residual liquid, heating precursor, and provide the high conductance that leads to semiconductor process chamber path.
Additional features comprises: this device optionally provides the zone in evaporimeter, and this zone provides the surface area that increases, so that liquid dissipates in order to evaporation biglyyer.As mentioned above, this device also can comprise and is used for the zone (winding heater assembly 38) that preheating enters the carrier gas before the evaporating area.The change example of this overall device design makes it can be integrated in the existing standard modular gas components, thereby becomes another parts on the standard platform, and replenishing as the existing heating means that are used for the same standardized parts.Also can find out upgradability of the present invention from each alternate embodiment, the different structure that these embodiment can use the various combination of precursor liquids, bubbler and/or vaporizer manifold and relate to base manifold.The present invention also is intended to farthest reduce the waste of precursor, the quick control assembly that for this reason uses close-loop control mode to be farthest reducing operation/emission request, and/or adopts aforesaid closed-loop control fully and work under lower-cost open loop mode with better simply metering (phase transformation) valve.
Will be further appreciated that the installation of any amount all is effective here.The factor relevant with the selection of mounting structure and structure material partly comprises the steam pressure of precursor, the corrosivity and the precursor flow rate of precursor.
The other characteristic of some relevant with apparatus of the present invention comprises:
A) liquid is transported to the evaporimeter that is designed at utmost reduce surface transport mechanism from metering valve, improves response the control signal change;
B) carrier gas provides the ring jacket that is used for liquid is transported to evaporimeter;
C) the carrier gas part that can be used as this device is heated;
D) design of the closed-loop control of the short dosage pulse of support waste minimum;
E) make and be stored near the metering valve the minimum design of delay chemical substance under the high temperature;
F) small-sized, compact design is fit to be installed in narrow zone.
The present invention more than has been described, but those skilled in the art will understand other and additional preferred embodiment that does not depart from the claim scope.

Claims (32)

1, a kind of direct liquid ejector device comprises:
Carrier gas inlet;
Be used for Liquid precursor is conveyed into the fluid metering valve in the space of carrier gas/liquid surface unit;
Receive the vaporizer body of the mixture of this Liquid precursor and carrier gas;
Heating element heater with described vaporizer body thermo-contact;
Matrix material in described vaporizer body;
Be positioned at described evaporation main body downstream, be used for this mixture being measured at least one the high conductance operation/drain valve that is sent to the teleprocessing chamber along pipeline.
By the described device of claim 1, it is characterized in that 2, this space is positioned at described vaporizer body top.
By the described device of claim 1, it is characterized in that 3, the annular gap allows carrier gas to enter and liquid is involved in the described vaporizer body from this space.
4, by the described device of claim 1, further comprise the carrier gas heater.
By the described device of claim 1, it is characterized in that 5, described pipeline is positioned at described vaporizer body below vertically.
6, by the described device of claim 1, it is characterized in that described pipeline is linear.
7, by the described device of claim 1, it is characterized in that described at least one high conductance operation/drain valve also comprises at least one pair of valve.
8, by the described device of claim 1, it is characterized in that carrier gas flows downward and flows into described vaporizer body by described space.
By the described device of claim 8, it is characterized in that 9, described pipeline extends perpendicular to the central axis of described vaporizer body.
By the described device of claim 8, it is characterized in that 10, the central axis that described pipeline is parallel to described vaporizer body extends.
11, a kind of be used to mix, evaporate precursor component and with this precursor component and teleprocessing environment with the device that the high conductance mode is communicated with, comprising:
Be used for introducing the supply meter of precursor liquids according to corresponding discharge;
Control valve, it is communicated with described supply meter to be used to control the flow that flows into the described precursor liquids of mixing menifold;
Vaporizer manifold, it is with carrier gas supply cooperation and provide carrier gas to be used for the being conveyed into described menifold that mixes simultaneously;
Evaporation component, it comprises at least one heating element heater, this heating element heater be communicated with described mixing menifold and with described vaporizer body in the composite material cooperation so that described Liquid precursor is phase-changed into steam output; And
Transmit described steam output along at least one the high conductance operation/drain valve that is positioned at described evaporation main body downstream, so that metered supply is to the teleprocessing chamber.
12, by the described device of claim 11, comprise that further at least one is communicated with the base manifold that is used to transmit described steam with described bubbler manifolds.
13, by the described device of claim 12, further comprise the base manifold that a plurality of and described bubbler manifolds is communicated with, at least one base manifold further comprises the present dilution gas inlets pipeline that is used for further mixing described steam.
14,, further be included in and be sent to second heating element heater that is communicated with described carrier gas supply before the described mixing menifold by the described device of claim 11.
15, by the described device of claim 14, it is characterized in that described heating element heater all further comprises the electric coil resistance heater that is associated with the chamber, at least one in described carrier gas and the described prevapourising precursor/admixture of gas is by described chamber.
16, by the described device of claim 11, further comprise with described vaporizer manifold cooperation to be used for bubbler manifolds than the low vapor pressure precursor.
17, by the described device of claim 11, comprise that further at least one pair of is installed in the operation/drain valve that is communicated with the described position in described evaporation main body downstream on the described vaporizer manifold.
18, by the described device of claim 11, it is characterized in that, described mixing menifold has given shape and size, and described device further comprises annular channels, this annular channels with described Liquid precursor with and crossover manifold related be that circular matching structure is communicated with equally, the annular shape in the cooperation gap that forms between the matching structure of annular channels and circle allows carrier gas to enter and liquid is involved in the described composite material, this composite material comprises the heated frit that is positioned at the below, and carrier gas does not contact the surrounding wall related with described evaporation component.
19, by the described device of claim 18, further comprise described crossover manifold, this crossover manifold comprises the path 66 of length direction equally, and this path extends to the described annular channels that is communicated with carrier gas inlet.
20,, further comprise biliquid injection supply meter, control valve and vaporizer manifold, to be used to mix and evaporate at least a specific Liquid precursor by the described device of claim 11.
21, by the described device of claim 20, further comprise two outlets, three base manifold, this pair outlet, three base manifold have the discrete outlet of two kinds of steam that are used for being generated, and have common fore line connection.
22, by the described device of claim 1, it is characterized in that, described vaporizer body comprises that further at least one is arranged to the heating chamber that is communicated with crossover manifold and loading menifold/control valve, and the size of each described chamber and menifold is fit to be installed in industrial standard modularization surface and installs on the matrix part.
23, by the described device of claim 11, further comprise: described control valve utilizes the mechanically deform of piezo-electric crystal to make described valve seat move.
24, by the described device of claim 11, it is characterized in that described control valve utilizes electromagnetic force to make described valve seat move.
25,, it is characterized in that described control valve utilizes and pneumatically actuatedly makes described valve seat move by the described device of claim 11.
By the described device of claim 11, it is characterized in that 26, described supply meter further comprises analog electronic sensor and control design.
By the described device of claim 11, it is characterized in that 27, described supply meter further comprises digital electronic sensing and control design.
28, a kind of be used to mix, evaporate precursor component and this precursor component and teleprocessing environment with the device that the high conductance mode is communicated with, comprising:
Be communicated with to be used to control the control valve that flows into the described precursor liquids flow that mixes menifold with described supply meter;
Vaporizer manifold, it is with carrier gas supply cooperation and provide carrier gas so that be sent to described the mixing in the menifold simultaneously;
Evaporation component, it comprises at least one heating element heater, this heating element heater be communicated with described mixing menifold and with described vaporizer body in the composite material cooperation so that described Liquid precursor is phase-changed into steam output; And
Transmit described steam output along at least one the high conductance operation/drain valve that is positioned at described evaporation main body downstream, so that metered supply is in the teleprocessing chamber.
29, by the described device of claim 28, further comprise: described control valve utilizes the mechanically deform of piezo-electric crystal to make described valve seat move.
30, by the described device of claim 28, it is characterized in that described control valve utilizes electromagnetic force to make described valve seat move.
31,, it is characterized in that described control valve utilizes and pneumatically actuatedly makes described valve seat move by the described device of claim 28.
32, by the described device of claim 28, it is characterized in that described control valve further comprises the combination of analog circuit and digital circuit.
CNA2007800126987A 2006-02-17 2007-02-20 Direct liquid injector device Pending CN101511460A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US77431806P 2006-02-17 2006-02-17
US60/774,318 2006-02-17
US11/676,346 2007-02-19

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103748262A (en) * 2011-08-22 2014-04-23 Soitec公司 Direct liquid injection for halide vapor phase epitaxy systems and methods
CN104882399A (en) * 2014-02-27 2015-09-02 朗姆研究公司 Apparatus And Method For Improving Wafer Uniformity
US9644285B2 (en) 2011-08-22 2017-05-09 Soitec Direct liquid injection for halide vapor phase epitaxy systems and methods
CN109519706A (en) * 2017-09-19 2019-03-26 株式会社堀场Stec Concentration control apparatus and material gas feedway
WO2022076444A1 (en) * 2020-10-09 2022-04-14 Lam Research Corporation Vapor delivery device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103748262A (en) * 2011-08-22 2014-04-23 Soitec公司 Direct liquid injection for halide vapor phase epitaxy systems and methods
US9644285B2 (en) 2011-08-22 2017-05-09 Soitec Direct liquid injection for halide vapor phase epitaxy systems and methods
CN104882399A (en) * 2014-02-27 2015-09-02 朗姆研究公司 Apparatus And Method For Improving Wafer Uniformity
CN104882399B (en) * 2014-02-27 2017-12-29 朗姆研究公司 Apparatus and method for improving wafer uniformity
CN109519706A (en) * 2017-09-19 2019-03-26 株式会社堀场Stec Concentration control apparatus and material gas feedway
CN109519706B (en) * 2017-09-19 2021-12-31 株式会社堀场Stec Concentration control device and material gas supply device
WO2022076444A1 (en) * 2020-10-09 2022-04-14 Lam Research Corporation Vapor delivery device

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