CN108269875A - GaAs/AlGaAs double-junction solar batteries with LRC-Ge/Si substrates and preparation method thereof - Google Patents
GaAs/AlGaAs double-junction solar batteries with LRC-Ge/Si substrates and preparation method thereof Download PDFInfo
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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- H01L31/0725—Multiple junction or tandem solar cells
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- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
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Abstract
The present invention relates to a kind of GaAs/AlGaAs double-junction solar batteries with LRC Ge/Si substrates and preparation method thereof, including:(a) Si substrates are chosen；(b) using magnetron sputtering method, Ge epitaxial layers are formed on the Si substrates, the Si substrates and the Ge epitaxial layers form Ge/Si substrates；(c) make the Ge epitaxial layers crystallization using LRC techniques；(d) using MOCVD techniques, the sub- batteries of GaAs/AlGaAs are formed on the Ge/Si substrates；(e) contact layer and reflecting layer are respectively formed on the sub- batteries of the GaAs/AlGaAs；(f) contact negative electrode is formed at the Si substrates bottom and contact positive electrode is formed on the contact layer.The present invention prepares GaAs/AlGaAs double-junction solar batteries using LRC techniques, can prepare very thin Ge epitaxial layers, and quality is higher, heat budget is low.The GaAs/AlGaAs double-junction solar batteries with Ge/Si substrates best in quality can be prepared.
Description
Technical field
The invention belongs to technical field of solar batteries, and in particular to a kind of GaAs/ with LRC-Ge/Si substrates
AlGaAs double-junction solar batteries and preparation method thereof
Background technology
The electricity conversion of GaAs based solar batteries Yin Qigao and be concerned, wherein more knot lamination GaAs solar energy
Battery has higher efficiency.Current widely used double-junction solar battery is GaAs/AlGaAs double-junction solars electricity
Pond, the selection of substrate material are most important.Using Si as substrate, epitaxial growth Ge films on it, by the Ge/Si substrates of formation
As substrate material, cost can be not only reduced, and low-dislocation-density, high performance solar cell can be obtained.But
Due to the lattice mismatch there are 4.2% between Si and Ge, Ge/Si substrate technologies realize that difficulty is big.
In order to reduce the misfit dislocation between Si and Ge, generally use two-step growth method is first grown at 200~400 DEG C
Thickness is the low temperature Ge buffer layers of 30~100nm, inhibits the island growth caused by big lattice mismatch, then 500~
Main body Ge epitaxial layers are grown at 850 DEG C.This method inhibits dislocation, in low-temperature space, to reduce main body Ge epitaxial layer dislocation densities.So
And Ge epitaxial layers dislocation density prepared by this method is still higher, needs further to reduce dislocation density by high annealing, this
Increase the complexity of technique.Simultaneously as high annealing there is also Si, Ge phase issue of inter-diffusion and surface roughness
Increase problem.Finally, the performance of follow-up double-junction solar device can be influenced.
Therefore, the preparation process of the GaAs/AlGaAs double-junction solar batteries of high quality Ge/Si substrates how is developed extremely
It closes important.
Invention content
In order to solve the above-mentioned problems in the prior art, the present invention provides a kind of with LRC-Ge/Si substrates
The preparation method of GaAs/AlGaAs double-junction solar batteries.
Specifically, a kind of GaAs/AlGaAs binodes with LRC-Ge/Si substrates that one embodiment of the invention proposes are too
The preparation method of positive energy battery, including：
(a) Si substrates are chosen；
(b) using magnetron sputtering method, Ge epitaxial layers, the Si substrates and the Ge epitaxial layers are formed on the Si substrates
Form Ge/Si substrates；
(c) using laser, crystallization (Laser Re-Crystallization, abbreviation LRC) technique makes the Ge epitaxial layers again
Crystallization；
(d) metallo-organic compound chemical gaseous phase deposition (Metal-organic Chemical Vapor are utilized
Deposition, abbreviation MOCVD) technique, the sub- batteries of GaAs/AlGaAs are formed on the Ge/Si substrates；
(e) contact layer and reflecting layer are respectively formed on the sub- batteries of the GaAs/AlGaAs；
(f) contact negative electrode is formed at the Si substrates bottom and contact positive electrode is formed on the contact layer.
In one embodiment of the invention, the Ge epitaxy layer thickness is 200nm.
In one embodiment of the invention, the step (c) includes：
(c1) using chemical vapor deposition (Chemical Vapor Deposition, abbreviation CVD) method, in the Ge/
SiO is formed on Si substrates2Layer；
(c2) Ge/Si substrates described in laser irradiation and the SiO2Layer makes the Ge/Si substrates and the SiO2Layer is warming up to
First temperature, under first temperature condition, what Ge epitaxial layers described in laser irradiation part were in contact with it simultaneously for molten state
The Si substrate layers and the SiO2Layer is not up to molten state；
(c3) it removes laser and makes the Ge epitaxial layers crystallisation by cooling of the irradiation part；
(c4) it is continuous to use Ge epitaxial layers whole position described in laser irradiation successively and cool down crystallization, until whole Ge
Epitaxial layer is all crystallized；
(c5) it is etched using dry etch process and eliminates SiO2Layer.
In one embodiment of the invention, it is 6.1kW/m that the parameter of the laser, which is laser power,
Laser traverse speed is 400mm/min, and first temperature is 500K.
In one embodiment of the invention, the step (d) includes：
(d1) the sub- batteries of GaAs are formed on the Ge/Si substrates using MOCVD techniques；
(d2) using MOCVD techniques tunnel knot is formed on the Ge batteries；
(d3) the sub- batteries of AlGaAs are formed in the tunnel junctions using MOCVD techniques.
In one embodiment of the invention, P is become in the tunnel+-GaAs/n+- GaAs tunnel knots.
In one embodiment of the invention, the step (d1) includes：
(d11) under the conditions of 600 DEG C, using MOCVD techniques, the first back surface fields of AlGaAs are formed on the Ge/Si substrates
Layer, and n-type doping is carried out to first back surface field layer；
(d12) under the conditions of 600 DEG C, using MOCVD techniques, the first base area is sequentially formed on the described first back of the body electric field layer
With the first emitter region；
(d13) under the conditions of 60 DEG C, using MOCVD techniques, AlGaAs first windows are formed in first emitter region
Layer, and p-type doping is carried out to the first window layer.
In one embodiment of the invention, the step (d3) includes：
(d31) the second back surface field layers of AlGaAs are formed in the tunnel junctions, and carries out n-type doping；
(d32) using MOCVD techniques, the second base area and the second emitter region are formed in second back surface field layer；
(d33) the second Window layers of AlGaAs are formed using MOCVD techniques, in second emitter region, and to described the
Two Window layers carry out p-type doping.
In one embodiment of the invention, the reflector material is silicon nitride.
An alternative embodiment of the invention provides a kind of GaAs/AlGaAs binode sun with LRC-Ge/Si substrates
Energy battery, the GaAs/AlGaAs double-junction solar batteries are prepared by above-described embodiment to be formed.
The embodiment of the present invention prepares GaAs/AlGaAs double-junction solar batteries using LRC techniques, can prepare very thin
Ge epitaxial layers, and quality is higher, heat budget is low.This technology by continuous LRC make Ge transverse crystallizings grow, so as to reduce by
The dislocation caused by lattice mismatch can prepare the GaAs/AlGaAs double-junction solars with Ge/Si substrates best in quality
Battery.
Description of the drawings
Fig. 1 is a kind of GaAs/AlGaAs double-junction solars electricity with LRC-Ge/Si substrates provided in an embodiment of the present invention
The flow chart of pond preparation process；
Fig. 2 is a kind of schematic diagram of LRC techniques provided in an embodiment of the present invention；
Fig. 3 is the phase transition temperature relation schematic diagram in a kind of thin film actuated light irradiation process provided in an embodiment of the present invention；
Fig. 4 is a kind of FEM Numerical Simulation schematic diagram of the technique of Ge/Si substrate materials provided in an embodiment of the present invention；
Fig. 5 is a kind of continuous LRC technological effects schematic diagram provided in an embodiment of the present invention；
Fig. 6 a- Fig. 6 m for a kind of GaAs/AlGaAs binodes with LRC-Ge/Si substrates provided in an embodiment of the present invention too
The preparation process schematic diagram of positive energy battery.
Specific embodiment
Further detailed description is done to the present invention, but embodiments of the present invention are not limited to reference to specific embodiment
This.
Embodiment one
Fig. 1 is referred to, Fig. 1 is bis- for a kind of GaAs/AlGaAs with LRC-Ge/Si substrates provided in an embodiment of the present invention
The flow chart of joint solar cell preparation process；The preparation process includes the following steps：
(a) Si substrates are chosen；
(b) using magnetron sputtering method, Ge epitaxial layers, the Si substrates and the Ge epitaxial layers are formed on the Si substrates
Form Ge/Si substrates；
Wherein, film is deposited by magnetron sputtering method, deposition rate is high, and film is high-quality, suitable for extensive raw
Production.
(c) make the Ge epitaxial layers crystallization using LRC techniques；
It is wherein advantageous in that using continuous LRC, the dislocation rate of Ge epitaxial layers is enabled to substantially reduce；
(d) using MOCVD techniques, the sub- batteries of GaAs/AlGaAs are formed on the Ge/Si substrates；
(e) contact layer and reflecting layer are respectively formed on the sub- batteries of the GaAs/AlGaAs；
(f) contact negative electrode is formed at the Si substrates bottom and contact positive electrode is formed on the contact layer.
Preferably, the Ge epitaxy layer thickness is 200nm.
Wherein, the step (c) includes：
(c1) using CVD method, SiO is formed on the Ge/Si substrates2Layer；
(c2) Ge/Si substrates described in laser irradiation and the SiO2Layer makes the Ge/Si substrates and the SiO2Layer is warming up to
First temperature, under first temperature condition, what Ge epitaxial layers described in laser irradiation part were in contact with it simultaneously for molten state
The Si substrate layers and the SiO2Layer is not up to molten state；
(c3) it removes laser and makes the Ge epitaxial layers crystallisation by cooling of the irradiation part；
(c4) it is continuous to use Ge epitaxial layers whole position described in laser irradiation successively and cool down crystallization, until whole Ge
Epitaxial layer is all crystallized；
(c5) it is etched using dry etch process and eliminates SiO2Layer.
Preferably, it is 6.1kW/m that the parameter of the laser, which is laser power, laser traverse speed 400mm/min, described
First temperature is 500K.
In addition, the step (d) includes：
(d1) the sub- batteries of GaAs are formed on the Ge/Si substrates using MOCVD techniques；
(d2) using MOCVD techniques tunnel knot is formed on the Ge batteries；
(d3) the sub- batteries of AlGaAs are formed in the tunnel junctions using MOCVD techniques.
Preferably, P is become in the tunnel+-GaAs/n+- GaAs tunnel knots.
Furthermore the step (d1) includes：
(d11) under the conditions of 600 DEG C, using MOCVD techniques, the first back surface fields of AlGaAs are formed on the Ge/Si substrates
Layer, and n-type doping is carried out to first back surface field layer；
(d12) under the conditions of 600 DEG C, using MOCVD techniques, the first base area is sequentially formed on the described first back of the body electric field layer
With the first emitter region；
(d13) under the conditions of 60 DEG C, using MOCVD techniques, AlGaAs first windows are formed in first emitter region
Layer, and p-type doping is carried out to the first window layer.
Furthermore the step (d3) includes：
(d31) the second back surface field layers of AlGaAs are formed in the tunnel junctions, and carries out n-type doping；
(d32) using MOCVD techniques, the second base area and the second emitter region are formed in second back surface field layer；
(d33) the second Window layers of AlGaAs are formed using MOCVD techniques, in second emitter region, and to described the
Two Window layers carry out p-type doping.
Preferably, the reflector material is silicon nitride.
Fig. 2 is referred to, Fig. 2 is a kind of schematic diagram of LRC techniques provided in an embodiment of the present invention.First use magnetron sputtering technique
Or CVD techniques form thin Ge epitaxial layers through two-step method, then the dislocation mismatch between Ge and Si is laterally discharged with continuous LRC,
So as to reduce the dislocation caused by lattice mismatch in epitaxial layer, Ge/Si substrates best in quality are prepared.
Fig. 3 is referred to, Fig. 3 is that the phase transition temperature in a kind of thin film actuated light irradiation process provided in an embodiment of the present invention closes
It is schematic diagram；Wherein, the principle of LRC is that material surface transient heating is allowed to using the high-energy of laser to melt crystallization,
Matter is the process of thermal induced phase transition, this point also has essential distinction with traditional laser thermal anneal.Therefore, LRC can be regarded as laser
To the fuel factor of film, i.e. laser is melted illuminated film by fuel factor, and crystallization is allowed to cool in the shorter time
Process.LRC is broadly divided into following three phases：
1) interaction stage of laser and substance.This stage material absorbing laser energy is changed into thermal energy, reaches fusing
State.During high-order harmonics spectrum, electric property, optical property, constructional aspect of substance etc. change.
2) the heat transfer stage of material.According to thermodynamics basic law, laser action in will occur on material conduction, it is right
Three kinds of heat transfer types of stream and radiation, heating speed is fast at this time, and temperature gradient is big.
3) mass transfer stage of the material under laser action.Mass transfer, i.e. substance move to separately from a certain position in space or space
The phenomenon that one position.In this stage, the particle setting in motion of energy is obtained through laser emission.There are two kinds of forms for mass transfer：Diffusion
Mass transfer and convective mass transfer.What diffusion mass transfer represented is the microscopic motion of atom or molecule；Convective mass transfer is then the macroscopic view fortune of fluid
It is dynamic.For melting crystallization mechanism completely, the temperature variations of laser crystallization rear film again are as shown in Figure 3.
Using laser, crystallization LRC technologies auxiliary prepares high quality void Ge substrates again, it is desirable that Ge layers of temperature of void under laser action
At least up to fusing point, and close proximity to scorification point, reach the nearly complete molten condition of preferable crystallization, ensure the follow-up complete of Ge crystal grain
U.S.'s crystallization.Meanwhile the Si substrate layers below epitaxial layer cannot reach fusing point, ensure that LRC does not have an impact substrate.Therefore,
It determines rational LRC related process parameters (such as laser power density, movement speed), controls epitaxial layer Temperature Distribution, will be
The key of the technique success or failure.Fig. 4 is referred to, Fig. 4 is a kind of having for technique of Ge/Si substrate materials provided in an embodiment of the present invention
The first simulation result schematic diagram of limit.In figure, ordinate represents Ge/Si system thickness, is served as a contrast in the Ge/Si of Ge epitaxy layer thickness 200nm
Laser power is used on bottom as 6.1kW/m, laser traverse speed be 400mm/min process conditions can realize Ge melt crystallization and
Si does not melt.
Fig. 5 is referred to, Fig. 5 is a kind of continuous laser provided in an embodiment of the present invention crystallization process effect diagram again.Swash
Light is pointed into sample stage by total reflection prism, and passes through in convex lens focus to sample, thin in thermal histories so as to prevent
Liquid after film melts is affected by gravity and flows the influence generated to crystallization.Laser again crystallization when, stepper motor drive sample
Platform moves, and is often moved to a position and carries out a laser irradiation, the position is made to become the blockage with high-energy, is then stopped
Only laser irradiation, sample stage are further continued for laser irradiation when being moved to the next position.So it is whole so that laser is irradiated to successively for cycle
A film surface so far completes continuous laser crystallization process again.
In addition, it is necessary to emphasize, laser of the invention crystallization LRC techniques and laser annealing (laser again
Annealing) technique has significant difference.Laser annealing technique belongs to thermal anneal process scope.It uses laser as heat source,
Only semiconductor is heated, does not generate phase transition process.And laser of the present invention is again in crystallization process processing procedure, semiconductor
Phase transformation twice can occur for material -- melt the solid-phase crystallization again that liquefies then.Thus, both this technique has significant area in itself
Not.
The invention has the advantages that：
1st, the method that the present invention uses magnetron sputtering first obtains Ge/Si substrates, material prepared by this method by two-step method
Expect that surface roughness is good, deposition rate is high, and at low cost, safety, and large-scale production potentiality are big；
2nd, the present invention can effectively reduce the dislocation density of Ge/Si substrates by continuous laser auxiliary crystallization Ge/Si substrates.
Continuous LRC process selectivities are high, act only on Ge epitaxial layers, and control is accurate；Simultaneously compared with conventional furnace annealing technique, only once
LRC can achieve the goal, and crystallization rate is fast, thus also have that processing step is simple, and process cycle is short, low excellent of heat budget
Point.
3rd, substrate of the Ge/Si substrates that the present invention is prepared using LRC auxiliary as GaAs/AlGaAs double-junction solar batteries
Layer, Ge epitaxial layers are very thin, are conducive to absorption of the battery to light, while can substantially reduce cost by substrate of Si.
4th, the method that the present invention uses metal organic chemical vapor deposition MOCVD, in Ge/Si Growns GaAs
Battery, since the lattice constant of Ge differs smaller with GaAs, the Ge epitaxial layers grown on a si substrate can be used as buffer layer, effectively
The dislocation density of GaAs is reduced, improves device performance.
Embodiment two
Fig. 6 a- Fig. 6 m, Fig. 6 a- Fig. 6 m are referred to as the GaAs/ provided in an embodiment of the present invention with LRC-Ge/Si substrates
The preparation process schematic diagram of AlGaAs double-junction solar batteries, on the basis of above-described embodiment, the present embodiment will more in detail
The technological process of the present invention is introduced in ground.This method includes：
S101, as shown in Figure 6 a, it is initial substrate materials to choose the monocrystalline silicon Si substrates 001 that thickness is 2 μm；
S102, as shown in Figure 6 b grows one layer of 200nm on Si substrates 001 using magnetron sputtering method with two-step process
Thick germanium Ge epitaxial layers 002；
S103, as fig. 6 c, using chemical vapor deposition CVD method surface deposition 150nm SiO2Layer 003；
S104,500K is first heated the material on the basis of Fig. 6 c, then continuous LRC carries SiO2Oxide layer 003
Ge/Si substrates, wherein laser power are 6.1kW/m, and laser traverse speed 400mm/min then makes material natural cooling.
S105, as shown in fig 6d, the SiO in Fig. 6 c is etched using dry etch process2Oxide layer 003, obtains high quality
Ge/Si substrates.
S106, as shown in fig 6e, using the method for MOCVD, deposition thickness is the AlGaAs materials of 100nm at 600 DEG C
Bottom cell back field layer 004 is prepared, and n-type doping is carried out to back surface field layer 004, a concentration of 5 × 1017cm-3。
S107, as shown in Figure 6 f deposits the base area 005 of GaAs bottoms battery and emitter region 006 using MOCVD at 600 DEG C.
About 3.5 μm of base area thickness, n-type doping, a concentration of 8 × 1016cm-3, emitting trivial thickness about 500nm, p-type is adulterated, and a concentration of 1
×1018cm-3。
S108, as shown in figure 6g, the AlGaAs materials bottom battery that deposition thickness is 100nm at 60 DEG C using MOCVD
Window layer 007, and pass through thermal diffusion technology and p-type, doping concentration about 1 × 10 are carried out to Window layer 00718cm-3。
S109, as shown in figure 6h, first with the method for MOCVD, deposition thickness is in the sub- battery Window layers 007 of GaAs
0.01 μm of GaAs layers 008, then to 008 layer of progress p-type doping, concentration is about 1 × 1019cm-3, then in GaAs layers of p-type
Deposition thickness is 0.02 μm of GaAs layers 009 on 008, and N-shaped doping, concentration is about 8 × 1019cm-3。
S110, as shown in Fig. 6 i, using the method for MOCVD, deposition thickness is the AlGaAs materials of 100nm at 600 DEG C
Cell back field layer 010 is pushed up as preparing, and n-type doping is carried out to back surface field layer 010, a concentration of 2 × 1017cm-3。
S111, as shown in Fig. 6 j, base area 011 and the emitter region of the sub- batteries of AlGaAs are deposited at 600 DEG C using MOCVD
012.About 0.5 μm of 011 thickness of base area, n-type doping, a concentration of 4 × 1016cm-3, about 0.3 μm of 012 thickness of emitter region, p-type doping,
A concentration of 3 × 1015cm-3。
S112, as shown in Fig. 6 k, by the use of MOCVD, deposition thickness is the AlGaAs of 30nm as top cell at 60 DEG C
Window layer 013, and pass through thermal diffusion technology and p-type, doping concentration about 1 × 10 are carried out to Window layer 01318cm-3。
S113, as shown in Fig. 6 l, the GaAs layers 014 of epitaxial growth 0.5um thickness, and to GaAs carry out a concentration of 1019cm-3P-type doping, and using plasma-reinforced chemical vapor deposition technology 250 DEG C deposit 100nm thickness silicon nitride material conduct
Anti-reflecting layer 015.
S114, as shown in Fig. 6 m.It is deposited back electrode first, when plated film continuously plates back electrode successively in evaporation coating machine
016, after back electrode has been deposited, in N2It is placed under protection in sintering furnace and 20min is sintered with 380 DEG C of temperature, to enhance back electrode
The combination of 016 and Si substrates 001, and positive electrode 017 is prepared in the same manner.
Embodiment three
A kind of GaAs/AlGaAs double-junction solar batteries with LRC-Ge/Si substrates provided in an embodiment of the present invention,
In, the GaAs/AlGaAs double-junction solar batteries are prepared as the method described in above-described embodiment to be formed.
In conclusion a kind of GaAs/ with LRC-Ge/Si substrate of the specific case used herein to the present invention
The preparation method principle and embodiment of AlGaAs double-junction solar batteries is expounded, and the explanation of above example is only used
In facilitating the understanding of the method and its core concept of the invention；Meanwhile for those of ordinary skill in the art, according to the present invention
Thought, there will be changes in specific embodiments and applications, in conclusion the content of the present specification should not be construed as
Limitation of the present invention, protection scope of the present invention should be subject to appended claim.
Claims (10)
1. a kind of preparation method of the GaAs/AlGaAs double-junction solar batteries with LRC-Ge/Si substrates, which is characterized in that
Including:
(a) Si substrates are chosen；
(b) using magnetron sputtering method, Ge epitaxial layers are formed on the Si substrates, the Si substrates and the Ge epitaxial layers are formed
Ge/Si substrates；
(c) make the Ge epitaxial layers crystallization using LRC techniques；
(d) using MOCVD techniques, the sub- batteries of GaAs/AlGaAs are formed on the Ge/Si substrates；
(e) contact layer and reflecting layer are respectively formed on the sub- batteries of the GaAs/AlGaAs；
(f) contact negative electrode is formed at the Si substrates bottom and contact positive electrode is formed on the contact layer.
2. preparation method according to claim 1, which is characterized in that the Ge epitaxy layer thickness is 200nm.
3. preparation method according to claim 1, which is characterized in that the step (c) includes：
(c1) using CVD method, SiO is formed on the Ge/Si substrates2Layer；
(c2) Ge/Si substrates described in laser irradiation and the SiO2Layer makes the Ge/Si substrates and the SiO2Layer is warming up to first
Temperature, under first temperature condition, Ge epitaxial layers described in laser irradiation part are in contact with it described simultaneously for molten state
Si substrates and the SiO2Layer is not up to molten state；
(c3) it removes laser and makes the Ge epitaxial layers crystallisation by cooling of the irradiation part；
(c4) it is continuous to use Ge epitaxial layers whole position described in laser irradiation successively and cool down crystallization, until whole Ge extensions
Layer is all crystallized；
(c5) it is etched using dry etch process and eliminates SiO2Layer.
4. preparation method according to claim 3, which is characterized in that the parameter of the laser is that laser power is 6.1kW/
M, laser traverse speed 400mm/min, first temperature are 500K.
5. preparation method according to claim 1, which is characterized in that the step (d) includes：
(d1) the sub- batteries of GaAs are formed on the Ge/Si substrates using MOCVD techniques；
(d2) using MOCVD techniques tunnel knot is formed on the Ge batteries；
(d3) the sub- batteries of AlGaAs are formed in the tunnel junctions using MOCVD techniques.
6. preparation method according to claim 5, which is characterized in that become P in the tunnel+-GaAs/n+- GaAs tunnels
Knot.
7. preparation method according to claim 5, which is characterized in that the step (d1) includes：
(d11) under the conditions of 600 DEG C, using MOCVD techniques, the first back surface field layers of AlGaAs are formed on the Ge/Si substrates, and
N-type doping is carried out to first back surface field layer；
(d12) under the conditions of 600 DEG C, using MOCVD techniques, the first base area and the are sequentially formed on the described first back of the body electric field layer
One emitter region；
(d13) under the conditions of 60 DEG C, using MOCVD techniques, AlGaAs first window layers are formed in first emitter region, and
P-type doping is carried out to the first window layer.
8. preparation method according to claim 5, which is characterized in that the step (d3) includes：
(d31) the second back surface field layers of AlGaAs are formed in the tunnel junctions, and carries out n-type doping；
(d32) using MOCVD techniques, the second base area and the second emitter region are formed in second back surface field layer；
(d33) using MOCVD techniques, the second Window layers of AlGaAs are formed in second emitter region, and to second window
Mouth layer carries out p-type doping.
9. preparation method according to claim 1, which is characterized in that the reflector material is silicon nitride.
A kind of 10. GaAs/AlGaAs double-junction solar batteries with LRC-Ge/Si substrates, which is characterized in that the GaAs/
AlGaAs double-junction solar batteries are prepared by claim 1~9 any one of them method and are formed.
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