CN108269817A - Array substrate, manufacturing method and the X ray sensor of X ray sensor - Google Patents
Array substrate, manufacturing method and the X ray sensor of X ray sensor Download PDFInfo
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- CN108269817A CN108269817A CN201810054898.9A CN201810054898A CN108269817A CN 108269817 A CN108269817 A CN 108269817A CN 201810054898 A CN201810054898 A CN 201810054898A CN 108269817 A CN108269817 A CN 108269817A
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- 239000000758 substrate Substances 0.000 title claims abstract description 104
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000002161 passivation Methods 0.000 claims abstract description 68
- 239000010408 film Substances 0.000 claims description 54
- 239000004065 semiconductor Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000005622 photoelectricity Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
This disclosure relates to sensor technical field, it is proposed a kind of manufacturing method of the array substrate of X ray sensor, the array substrate of X ray sensor includes underlay substrate and the film transistor device and photodiode device that are arranged on underlay substrate, the manufacturing method include：The first planarization layer is formed on the first passivation layer of film transistor device；The second electrode lay is formed on the first planarization layer, the second electrode lay can block film transistor device；Photodiode device is formed on the second electrode lay.The array substrate pixel filling rate that is manufactured using the manufacturing method is higher, sensitivity is higher.
Description
Technical field
This disclosure relates to sensor technical field, in particular to a kind of array substrate of X ray sensor, X ray
The manufacturing method of the array substrate of sensor and be equipped with the X ray sensor array substrate X ray sensor.
Background technology
The array substrate of X ray sensor is generally included in each pixel region：Photodiode device and thin film transistor (TFT)
Device.Wherein, the main function of photodiode device is to receive light, and pass through photovoltaic effect and optical signal is converted into telecommunications
Number, and the main function of film transistor device is the electric signal generated as control switch and transmission photovoltaic effect.
With reference to the structure chart of the array substrate of X ray sensor in the prior art shown in FIG. 1.The battle array of X ray sensor
Row substrate includes the film transistor device being set on underlay substrate 1 and photodiode device.Film transistor device includes
Grid layer 2, gate insulating layer 3, active layer 4,5 and first passivation layer 6 of first electrode layer etc.；Photodiode device includes
Semiconductor layer 10, transparent electrode layer 11, third passivation layer 12, third electrode 13, the second planarization layer 14 and the 4th passivation layer
15 etc..Film transistor device and photodiode device are same layer designs, then cannot above film transistor device
Photodiode device is set, and the area of photodiode device is smaller；And the third electrode 13 of photodiode device is not
It only needs to connect cabling and photodiode device, it is also necessary to obstruct the light as barrier bed and light is avoided to inject thin film transistor (TFT)
Device, therefore, it is necessary to by third electrode 13 design wider, wider third electrode 13 can shut out the light inject photodiode
Device.Therefore, the pixel filling rate of the array substrate of the X ray sensor of this design is relatively low, most of in 55%-60%,
So as to cause the sensitivity of X ray sensor relatively low.
Therefore, it is necessary to study a kind of manufactures of the array substrate of X ray sensor, the array substrate of X ray sensor
Method and be equipped with the X ray sensor array substrate X ray sensor.
It should be noted that information is only used for strengthening the reason to the background of the disclosure disclosed in above-mentioned background technology part
Solution, therefore can include not forming the information to the prior art known to persons of ordinary skill in the art.
Invention content
The disclosure is designed to provide a kind of array substrate of X ray sensor, the array substrate of X ray sensor
Manufacturing method and be equipped with the X ray sensor array substrate X ray sensor, and then overcome at least to a certain extent
Since pixel filling rate is relatively low and the problem of sensitivity is relatively low caused by the limitation of the relevant technologies and defect.
According to one aspect of the disclosure, a kind of manufacturing method of the array substrate of X ray sensor is provided, X ray passes
The array substrate of sensor includes underlay substrate and two pole of film transistor device and photoelectricity being arranged on the underlay substrate
Tube device, the manufacturing method include：
The first planarization layer is formed on the first passivation layer of film transistor device；
The second electrode lay is formed on first planarization layer, it is brilliant that the second electrode lay can block the film
Body tube device；
Photodiode device is formed on the second electrode lay.
In a kind of exemplary embodiment of the disclosure, after first planarization layer is formed, the manufacturing method
It further includes：
The second passivation layer is formed on first planarization layer.
In a kind of exemplary embodiment of the disclosure, the manufacturing method further includes：
When forming first passivation layer, first through hole is formed in first passivation layer；
When forming first planarization layer, the second through-hole is formed in first planarization layer；
When forming second passivation layer, third through-hole is formed in second passivation layer；
Wherein, it is sequentially communicated between the first through hole, second through-hole and the third through-hole, makes described second
Electrode layer sequentially passes through the third through-hole, second through-hole and the first through hole and the film transistor device
First electrode layer connects.
In a kind of exemplary embodiment of the disclosure, photodiode device is formed on the second electrode lay,
Including：
Semiconductor layer, projection energy of the semiconductor layer on the underlay substrate are formed on the second electrode lay
Enough cover projection of the film transistor device on the underlay substrate；
Transparent electrode layer is formed in the semiconductor layer.
According to one aspect of the disclosure, a kind of array substrate of X ray sensor, the array of X ray sensor are provided
Substrate includes underlay substrate and the film transistor device and photodiode device that are arranged on the underlay substrate, institute
Array substrate is stated to further include：
First planarization layer is formed on the first passivation layer of the film transistor device；
The second electrode lay is formed on first planarization layer, and the second electrode lay can block the film
Transistor device, the photodiode device are formed on the second electrode lay.
In a kind of exemplary embodiment of the disclosure, the array substrate further includes：
Second passivation layer is formed between first planarization layer and the second electrode lay.
In a kind of exemplary embodiment of the disclosure, the array substrate further includes：
First through hole is formed in first passivation layer；
Second through-hole is formed in first planarization layer；
Third through-hole is formed in second passivation layer
Wherein, it is sequentially communicated between the first through hole, second through-hole and the third through-hole, second electricity
Pole layer sequentially passes through the of the third through-hole, second through-hole and the first through hole and the film transistor device
One electrode layer connects.
In a kind of exemplary embodiment of the disclosure, the photodiode device includes：
Semiconductor layer is formed on the second electrode lay, and projection of the semiconductor layer on underlay substrate can
Cover projection of the film transistor device on the underlay substrate；
Transparent electrode layer is formed in the semiconductor layer.
In a kind of exemplary embodiment of the disclosure, the photodiode device further includes：
Third passivation layer is formed on the transparent electrode layer；
Fourth hole is formed in the third passivation layer；
Third electrode is formed on the third passivation layer, and through the fourth hole and the transparent electrode layer
Connection, projection of the third electrode on the underlay substrate is with the film transistor device on the underlay substrate
Projection, which is separated by, to be left.
According to one aspect of the disclosure, a kind of X ray sensor is provided, including：
The array substrate of X ray sensor described in above-mentioned any one.
The manufacturing method of the array substrate of the X ray sensor of the disclosure, in the first passivation layer of film transistor device
On form the first planarization layer, form the second electrode lay on the first planarization layer, the second electrode lay can block described
Film transistor device；Photodiode device is formed on the second electrode lay.On the one hand, by being arranged on photodiode
The second electrode lay below device blocks film transistor device, and the setting in the top of photodiode device is avoided to block, is made
The photosensitive area increase of photodiode device improves the sensitivity of array substrate.On the other hand, photodiode device with it is thin
Film transistor device is not located at same layer, and the design area of photodiode device can increase very much, make array substrate
Pixel filling rate improves, and sensitivity is caused to improve.
It should be understood that above general description and following detailed description are only exemplary and explanatory, not
The disclosure can be limited.
Description of the drawings
Attached drawing herein is incorporated into specification and forms the part of this specification, shows the implementation for meeting the disclosure
Example, and for explaining the principle of the disclosure together with specification.It should be evident that the accompanying drawings in the following description is only the disclosure
Some embodiments, for those of ordinary skill in the art, without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 schematically shows the structure chart of the array substrate of X ray sensor in the prior art.
Fig. 2 schematically shows the flow chart of the manufacturing method of the array substrate of the X ray sensor of the present invention.
Fig. 3 schematically shows the structure chart of the array substrate of the X ray sensor of the present invention.
In figure：
1st, underlay substrate；
2nd, grid layer；
3rd, gate insulating layer；
4th, active layer；
5th, first electrode layer；
6th, the first passivation layer；
7th, the first planarization layer；
8th, the second passivation layer；
9th, the second electrode lay；
10th, semiconductor layer；
11st, transparent electrode layer；
12nd, third passivation layer；
13rd, third electrode；
14th, the second planarization layer；
15th, the 4th passivation layer.
Specific embodiment
Example embodiment is described more fully with reference to the drawings.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to example set forth herein；On the contrary, these embodiments are provided so that the disclosure will more
Fully and completely, and by the design of example embodiment comprehensively it is communicated to those skilled in the art.Described feature, knot
Structure or characteristic can be in any suitable manner incorporated in one or more embodiments.In the following description, it provides perhaps
More details fully understand embodiment of the present disclosure so as to provide.It it will be appreciated, however, by one skilled in the art that can
One or more in the specific detail are omitted with technical solution of the disclosure or others side may be used
Method, constituent element, device, step etc..In other cases, be not shown in detail or describe known solution to avoid a presumptuous guest usurps the role of the host and
So that all aspects of this disclosure thicken.
In addition, attached drawing is only the schematic illustrations of the disclosure, it is not necessarily drawn to scale.Identical attached drawing mark in figure
Note represents same or similar part, thus will omit repetition thereof.
A kind of manufacturing method of the array substrate of X ray sensor is provided firstly in this example embodiment, X ray passes
The array substrate of sensor can include underlay substrate 1 and the film transistor device and photoelectricity two that are arranged on underlay substrate 1
Pole pipe device.With reference to the flow chart of the manufacturing method of the array substrate of X ray sensor shown in Fig. 2, which can be with
Include the following steps：
Step S10 forms the first planarization layer 7 on the first passivation layer 6 of film transistor device.
Step S20, forms the second electrode lay 9 on first planarization layer 7, and the second electrode lay 9 can hide
Keep off the film transistor device.
Step S30 forms photodiode device on the second electrode lay 9.
According to the manufacturing method of the array substrate of X ray sensor in this example embodiment, on the one hand, by being arranged on light
The second electrode lay 9 below electric diode device blocks film transistor device, avoids setting above photodiode device
It puts and blocks, increase the photosensitive area of photodiode device, improve the sensitivity of array substrate.On the other hand, two pole of photoelectricity
Tube device is not located at same layer with film transistor device, and the design area of photodiode device can increase very much,
Array substrate pixel filling rate is improved, sensitivity is caused to improve.
In the following, the manufacturing method of the array substrate of the X ray sensor in this example embodiment will be carried out further
Explanation.
In step slo, the first planarization layer 7 is formed on the first passivation layer 6 of film transistor device.
Film transistor device can include：The grid layer 2 being formed on underlay substrate 1, is formed on grid layer 2
Gate insulating layer 3, the active layer 4 being formed on part of grid pole insulating layer 3 is formed in active layer 4 and rest part grid
First electrode layer 5 on pole insulating layer 3, i.e. source-drain electrode layer and the first passivation layer 6 being formed on first electrode layer 5.
The formation of above-mentioned grid layer 2, gate insulating layer 3, active layer 4, source-drain electrode layer and the first passivation layer 6 may be used
Evaporation process, sputtering technology, photoetching process etc..
Underlay substrate 1 can be glass substrate, plastic base or other kinds of substrate.First passivation layer 6 may be used
Inorganic insulating membrane, such as silicon nitride, silica or organic insulating film, such as resin material.
When forming the first passivation layer 6, first through hole can be formed in the first passivation layer 6；Photoetching process can be passed through
It is formed simultaneously the first passivation layer 6 and first through hole.
In this example embodiment, after the first passivation layer 6 is formed, it is flat that first is formed on the first passivation layer 6
Smoothization layer 7 makes upper surface relatively flatization of entire film transistor device.First planarization layer 7 can be inorganic insulating membrane,
Such as silicon nitride, silica or organic insulating film, such as various resin materials.The thinner thickness of first passivation layer 6, can make
Upper surface relatively flatization of entire film transistor device.
When forming the first planarization layer 7, the second through-hole can be formed in the first planarization layer 7；Photoetching can be passed through
Technique is formed simultaneously the first planarization layer 7 and the second through-hole, and the second through-hole is connected with first through hole.In this example embodiment
In, the second through-hole is to be designed with central rotating shaft with first through hole.
After the first planarization layer 7 is formed, the second passivation layer 8 can also be formed on the first planarization layer 7.Second
Passivation layer 8 can be inorganic insulating membrane, such as silicon nitride, silica or organic insulating film, such as various resin materials.Certainly,
Can be not provided with the second passivation layer 8, can be reached by the first planarization layer 7 make the upper surface of entire film transistor device compared with
For the purpose for planarizing and insulating.
When forming the second passivation layer 8, third through-hole can be formed in the second passivation layer 8；Photoetching process can be passed through
The second passivation layer 8 and third through-hole are formed simultaneously, third through-hole is sequentially communicated with the second through-hole and first through hole.Originally showing
In example embodiment, third through-hole, the second through-hole and first through hole are to be designed with central rotating shaft.
In step S20, the second electrode lay 9,9 energy of the second electrode lay are formed on first planarization layer 7
Enough block the film transistor device.
In this example embodiment, the second electrode lay 9 is opaque metal layer.After the second passivation layer 8 is formed,
Can the second electrode lay 9 be formed on the second passivation layer 8 by evaporation process, sputtering technology etc., the second electrode lay 9 covers
The upper surface of entire second passivation layer 8 so as to which film transistor device be blocked, avoids the light on top from being incident upon film crystal
Pipe.Certainly, in the case where being not provided with the second passivation layer 8, the second electrode lay 9 can be formed in the first planarization layer 7 it
On.
During vapor deposition, sputtering etc., evaporation material can not only be formed in the second passivation layer 8 or the first planarization layer 7 it
On, and the hole wall and bottom hole of first through hole, the second through-hole and third through-hole can be formed in；Therefore, the second electricity of formation
Pole layer 9 can sequentially pass through third through-hole, the second through-hole and first through hole and the first electrode layer of film transistor device 5 connects
It connects, film transistor device is enable to control the switch of photodiode device and transmits photodiode device by photovoltaic effect
The electric signal of generation.
In step s 30, photodiode device is formed on the second electrode lay 9.
Photodiode device can include：The semiconductor layer 10 being formed on the second electrode lay 9, is formed in semiconductor
Transparent electrode layer 11 on layer 10, the third passivation layer 12 being formed on transparent electrode layer 11 and to be formed in third blunt
Change the third electrode 13 on layer 12；It can also include being formed in the second planarization layer 14 on third electrode 13.
In this example embodiment, projection of the semiconductor layer 10 on underlay substrate 1 can cover thin film transistor (TFT) device
Projection of the part on the underlay substrate 1, the area increase of semiconductor layer 10 is more compared with prior art, makes photodiode
The photosensitive area increase of device improves the sensitivity of array substrate.
When forming third passivation layer 12, fourth hole can be formed in third passivation layer 12, make third electrode 13 can
It is connect with running through fourth hole with transparent electrode layer 11.So set, third electrode 13 is as just photodiode device
Top electrode, without blocking as film transistor device, therefore, the setting of third electrode 13 only need to meet resistance requirement i.e.
Can, what can be designed is relatively thin shorter, although can also cause to block to photodiode device, relative to of the prior art
Shielded area reduces very much, increases the photosensitive area of photodiode device, improves the sensitivity of array substrate.
In addition, although describing each step of method in the disclosure with particular order in the accompanying drawings, this does not really want
Asking or implying must could realize according to the particular order come the step for performing these steps or having to carry out shown in whole
Desired result.It is additional or alternative, it is convenient to omit certain steps, by multiple steps merge into a step perform and/
Or a step is decomposed into execution of multiple steps etc..
Further, this example embodiment additionally provides the manufacturer of the array substrate using above-mentioned X ray sensor
The array substrate of X ray sensor made of method.The array substrate of X ray sensor can include underlay substrate 1 and setting
Film transistor device and photodiode device on the underlay substrate 1.With reference to X ray sensor shown in Fig. 3
The structure chart of array substrate, the array substrate can also include the first planarization layer 7 and the second electrode lay 9, the first planarization
Layer 7 is formed on the first passivation layer 6 of film transistor device；The second electrode lay 9 is formed on the first planarization layer 7,
The second electrode lay 9 can block film transistor device, and photodiode device is formed on the second electrode lay 9.
In this exemplary embodiment, the array substrate can also include the second passivation layer 8, and the second passivation layer 8 is formed in
Between first planarization layer 7 and the second electrode lay 9.
In this exemplary embodiment, the array substrate can also include first through hole, the second through-hole and third through-hole；
First through hole is formed in first passivation layer 6；Second through-hole is formed in first planarization layer 7；Third through-hole shape
Second passivation layer 8 described in Cheng Yu；Wherein, connect successively between the first through hole, second through-hole and the third through-hole
Logical, the second electrode lay 9 sequentially passes through the third through-hole, second through-hole and the first through hole and film crystal
The first electrode layer 5 of tube device connects.
In this exemplary embodiment, the photodiode device can include semiconductor layer 10 and transparent electrode layer
11, semiconductor layer 10 is formed on the second electrode lay 9, and projection of the semiconductor layer 10 on underlay substrate 1 can
Cover projection of the film transistor device on the underlay substrate 1；Transparent electrode layer 11 is formed in the semiconductor layer
On 10.
In this exemplary embodiment, the photodiode device can also include third passivation layer 12, four-way and
13 layers of third electrode；Third passivation layer 12 is formed on the transparent electrode layer 11；It is blunt that fourth hole is formed in the third
Change in layer 12；Third electrode 13 is formed on the third passivation layer 12, and through the fourth hole and the transparent electricity
Pole layer 11 connects, and projection of the third electrode 13 on the underlay substrate 1 is with the film transistor device in the lining
Projection on substrate 1, which is separated by, to be left.
The concrete structure and manufacturing method of the array substrate of X ray sensor are above-mentioned to be had been carried out being described in detail, this
Place repeats no more.
Further, this example embodiment additionally provides a kind of X ray sensor, which can include
The array substrate of above-mentioned X ray sensor.The concrete structure and manufacturing method of the array substrate of X ray sensor are above-mentioned
Through being described in detail, details are not described herein again.
Those skilled in the art will readily occur to the disclosure its after considering specification and putting into practice invention disclosed herein
Its embodiment.This application is intended to cover any variations, uses, or adaptations of the disclosure, these modifications, purposes or
Person's adaptive change follows the general principle of the disclosure and including the undocumented common knowledge in the art of the disclosure
Or conventional techniques.Description and embodiments are considered only as illustratively, and the true scope and spirit of the disclosure are by appended
Claim is pointed out.
Claims (10)
1. a kind of manufacturing method of the array substrate of X ray sensor, the array substrate of X ray sensor includes underlay substrate,
And it is arranged on film transistor device and photodiode device on the underlay substrate, which is characterized in that the manufacture
Method includes：
The first planarization layer is formed on the first passivation layer of film transistor device；
The second electrode lay is formed on first planarization layer, the second electrode lay can block the thin film transistor (TFT)
Device；
Photodiode device is formed on the second electrode lay.
2. the manufacturing method of the array substrate of X ray sensor according to claim 1, which is characterized in that forming institute
After stating the first planarization layer, the manufacturing method further includes：
The second passivation layer is formed on first planarization layer.
3. the manufacturing method of the array substrate of X ray sensor according to claim 2, which is characterized in that the manufacture
Method further includes：
When forming first passivation layer, first through hole is formed in first passivation layer；
When forming first planarization layer, the second through-hole is formed in first planarization layer；
When forming second passivation layer, third through-hole is formed in second passivation layer；
Wherein, it is sequentially communicated between the first through hole, second through-hole and the third through-hole, makes the second electrode
Layer sequentially passes through the first of the third through-hole, second through-hole and the first through hole and the film transistor device
Electrode layer connects.
4. the manufacturing method of the array substrate of X ray sensor according to claim 1, which is characterized in that described
Photodiode device is formed on two electrode layers, including：
Semiconductor layer is formed on the second electrode lay, projection of the semiconductor layer on the underlay substrate can be covered
Cover projection of the film transistor device on the underlay substrate；
Transparent electrode layer is formed in the semiconductor layer.
5. a kind of array substrate of X ray sensor, the array substrate of X ray sensor includes underlay substrate and is arranged on
Film transistor device and photodiode device on the underlay substrate, which is characterized in that the array substrate further includes：
First planarization layer is formed on the first passivation layer of the film transistor device；
The second electrode lay is formed on first planarization layer, and the second electrode lay can block the film crystal
Tube device, the photodiode device are formed on the second electrode lay.
6. the array substrate of X ray sensor according to claim 5, which is characterized in that the array substrate further includes：
Second passivation layer is formed between first planarization layer and the second electrode lay.
7. the array substrate of X ray sensor according to claim 6, which is characterized in that the array substrate further includes：
First through hole is formed in first passivation layer；
Second through-hole is formed in first planarization layer；
Third through-hole is formed in second passivation layer
Wherein, it is sequentially communicated between the first through hole, second through-hole and the third through-hole, the second electrode lay
Sequentially pass through the third through-hole, second through-hole and the first through hole and the first electricity of the film transistor device
Pole layer connection.
8. the array substrate of X ray sensor according to claim 5, which is characterized in that the photodiode device
Including：
Semiconductor layer is formed on the second electrode lay, and projection of the semiconductor layer on underlay substrate can cover
Projection of the film transistor device on the underlay substrate；
Transparent electrode layer is formed in the semiconductor layer.
9. the array substrate of X ray sensor according to claim 8, which is characterized in that the photodiode device
It further includes：
Third passivation layer is formed on the transparent electrode layer；
Fourth hole is formed in the third passivation layer；
Third electrode is formed on the third passivation layer, and is connect through the fourth hole with the transparent electrode layer,
Projection and film transistor device projection on the underlay substrate of the third electrode on the underlay substrate
It is separated by and leaves.
10. a kind of X ray sensor, which is characterized in that including：
The array substrate of X ray sensor described in claim 5~9 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810054898.9A CN108269817B (en) | 2018-01-19 | 2018-01-19 | Array substrate of X-ray sensor, manufacturing method and X-ray sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810054898.9A CN108269817B (en) | 2018-01-19 | 2018-01-19 | Array substrate of X-ray sensor, manufacturing method and X-ray sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108269817A true CN108269817A (en) | 2018-07-10 |
| CN108269817B CN108269817B (en) | 2021-10-12 |
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| CN201810054898.9A Active CN108269817B (en) | 2018-01-19 | 2018-01-19 | Array substrate of X-ray sensor, manufacturing method and X-ray sensor |
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Cited By (4)
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| CN110047859A (en) * | 2019-04-24 | 2019-07-23 | 北京京东方传感技术有限公司 | Sensor and preparation method thereof |
| CN111933737A (en) * | 2020-07-24 | 2020-11-13 | 上海思立微电子科技有限公司 | Photoelectric sensor manufactured by TFT (thin film transistor) process, manufacturing method and electronic equipment |
| WO2021208449A1 (en) * | 2020-04-16 | 2021-10-21 | 神盾股份有限公司 | Photoelectric sensor |
| WO2022193439A1 (en) * | 2021-03-19 | 2022-09-22 | 深圳市华星光电半导体显示技术有限公司 | Array substrate and manufacturing method, and display panel |
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| CN110047859A (en) * | 2019-04-24 | 2019-07-23 | 北京京东方传感技术有限公司 | Sensor and preparation method thereof |
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| CN111933737A (en) * | 2020-07-24 | 2020-11-13 | 上海思立微电子科技有限公司 | Photoelectric sensor manufactured by TFT (thin film transistor) process, manufacturing method and electronic equipment |
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