CN108269817B - Array substrate of X-ray sensor, manufacturing method and X-ray sensor - Google Patents
Array substrate of X-ray sensor, manufacturing method and X-ray sensor Download PDFInfo
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- CN108269817B CN108269817B CN201810054898.9A CN201810054898A CN108269817B CN 108269817 B CN108269817 B CN 108269817B CN 201810054898 A CN201810054898 A CN 201810054898A CN 108269817 B CN108269817 B CN 108269817B
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- 239000000758 substrate Substances 0.000 title claims abstract description 101
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 238000002161 passivation Methods 0.000 claims abstract description 70
- 239000010409 thin film Substances 0.000 claims abstract description 59
- 239000004065 semiconductor Substances 0.000 claims description 25
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 238000000034 method Methods 0.000 description 16
- 239000010408 film Substances 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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Abstract
The disclosure relates to the technical field of sensors, and provides a manufacturing method of an array substrate of an X-ray sensor, wherein the array substrate of the X-ray sensor comprises a substrate, and a thin film transistor device and a photodiode device which are arranged on the substrate, and the manufacturing method comprises the following steps: forming a first planarization layer over a first passivation layer of a thin film transistor device; forming a second electrode layer over the first planarization layer, the second electrode layer capable of shielding the thin film transistor device; a photodiode device is formed over the second electrode layer. The array substrate manufactured by the manufacturing method has high pixel filling rate and high sensitivity.
Description
Technical Field
The present disclosure relates to the field of sensor technologies, and in particular, to an array substrate of an X-ray sensor, a method for manufacturing the array substrate of the X-ray sensor, and an X-ray sensor having the array substrate of the X-ray sensor mounted thereon.
Background
The array substrate of the X-ray sensor generally includes, at each pixel region: photodiode devices and thin film transistor devices. The photodiode device mainly receives light and converts an optical signal into an electrical signal through a photovoltaic effect, and the thin film transistor device mainly serves as a control switch and transmits the electrical signal generated by the photovoltaic effect.
Referring to fig. 1, a block diagram of an array substrate of an X-ray sensor in the related art is shown. The array substrate of the X-ray sensor includes a thin film transistor device and a photodiode device provided on a substrate 1. The thin film transistor device includes a gate electrode layer 2, a gate insulating layer 3, an active layer 4, a first electrode layer 5, and a first passivation layer 6, and the like; the photodiode device includes a semiconductor layer 10, a transparent electrode layer 11, a third passivation layer 12, a third electrode 13, a second planarization layer 14, and a fourth passivation layer 15, and the like. The thin film transistor device and the photodiode device are designed in the same layer, so that the photodiode device cannot be arranged on the thin film transistor device, and the area of the photodiode device is smaller; moreover, the third electrode 13 of the photodiode device not only needs to connect the routing line and the photodiode device, but also needs to be used as a shielding layer to shield light to prevent the light from entering the thin film transistor device, so that the third electrode 13 needs to be designed to be wider, and the wider third electrode 13 can shield the light from entering the photodiode device. Therefore, the array substrate of the X-ray sensor with such a design has a low pixel filling rate, mostly 55% -60%, resulting in a low sensitivity of the X-ray sensor.
Therefore, it is necessary to study an array substrate of an X-ray sensor, a method for manufacturing the array substrate of the X-ray sensor, and an X-ray sensor on which the array substrate of the X-ray sensor is mounted.
It is to be noted that the information disclosed in the above background section is only for enhancement of understanding of the background of the present disclosure, and thus may include information that does not constitute prior art known to those of ordinary skill in the art.
Disclosure of Invention
An object of the present disclosure is to provide an array substrate of an X-ray sensor, a method of manufacturing the array substrate of the X-ray sensor, and an X-ray sensor having the array substrate of the X-ray sensor mounted thereon, thereby overcoming, at least to some extent, the problems of low pixel filling rate and low sensitivity due to the limitations and disadvantages of the related art.
According to an aspect of the present disclosure, there is provided a method of manufacturing an array substrate of an X-ray sensor, the array substrate of the X-ray sensor including a substrate, and a thin film transistor device and a photodiode device provided on the substrate, the method including:
forming a first planarization layer over a first passivation layer of a thin film transistor device;
forming a second electrode layer over the first planarization layer, the second electrode layer capable of shielding the thin film transistor device;
a photodiode device is formed over the second electrode layer.
In an exemplary embodiment of the present disclosure, after forming the first planarizing layer, the manufacturing method further includes:
a second passivation layer is formed over the first planarization layer.
In an exemplary embodiment of the present disclosure, the manufacturing method further includes:
forming a first via hole in the first passivation layer while forming the first passivation layer;
forming a second via in the first planarization layer while forming the first planarization layer;
forming a third via hole in the second passivation layer while forming the second passivation layer;
the first through hole, the second through hole and the third through hole are sequentially communicated, so that the second electrode layer sequentially penetrates through the third through hole, the second through hole and the first through hole to be connected with the first electrode layer of the thin film transistor device.
In an exemplary embodiment of the present disclosure, forming a photodiode device over the second electrode layer includes:
forming a semiconductor layer on the second electrode layer, wherein the projection of the semiconductor layer on the substrate base plate can cover the projection of the thin film transistor device on the substrate base plate;
a transparent electrode layer is formed over the semiconductor layer.
According to an aspect of the present disclosure, there is provided an array substrate of an X-ray sensor, the array substrate of the X-ray sensor including a substrate, and a thin film transistor device and a photodiode device disposed on the substrate, the array substrate further including:
a first planarization layer formed over the first passivation layer of the thin film transistor device;
and a second electrode layer formed on the first planarization layer, the second electrode layer being capable of shielding the thin film transistor device, and the photodiode device being formed on the second electrode layer.
In an exemplary embodiment of the present disclosure, the array substrate further includes:
a second passivation layer formed between the first planarization layer and the second electrode layer.
In an exemplary embodiment of the present disclosure, the array substrate further includes:
a first via formed in the first passivation layer;
a second via formed in the first planarization layer;
a third via hole formed in the second passivation layer
The first through hole, the second through hole and the third through hole are sequentially communicated, and the second electrode layer sequentially penetrates through the third through hole, the second through hole and the first through hole and is connected with the first electrode layer of the thin film transistor device.
In one exemplary embodiment of the present disclosure, the photodiode device includes:
a semiconductor layer formed on the second electrode layer, wherein the projection of the semiconductor layer on a substrate can cover the projection of the thin film transistor device on the substrate;
and the transparent electrode layer is formed on the semiconductor layer.
In an exemplary embodiment of the present disclosure, the photodiode device further includes:
a third passivation layer formed on the transparent electrode layer;
a fourth via hole formed in the third passivation layer;
and the third electrode is formed on the third passivation layer and penetrates through the fourth through hole to be connected with the transparent electrode layer, and the projection of the third electrode on the substrate base plate is isolated from the projection of the thin film transistor device on the substrate base plate.
According to an aspect of the present disclosure, there is provided an X-ray sensor including:
the array substrate for an X-ray sensor according to any one of the above claims.
According to the manufacturing method of the array substrate of the X-ray sensor, a first planarization layer is formed on a first passivation layer of a thin film transistor device, and a second electrode layer is formed on the first planarization layer and can shield the thin film transistor device; a photodiode device is formed over the second electrode layer. On the one hand, the thin film transistor device is shielded through the second electrode layer arranged below the photodiode device, shielding is avoided being arranged above the photodiode device, the photosensitive area of the photodiode device is increased, and the sensitivity of the array substrate is improved. On the other hand, the photodiode device and the thin film transistor device are not arranged on the same layer, the design area of the photodiode device can be greatly increased, the pixel filling rate of the array substrate is improved, and the sensitivity is improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure. It is to be understood that the drawings in the following description are merely exemplary of the disclosure, and that other drawings may be derived from those drawings by one of ordinary skill in the art without the exercise of inventive faculty.
Fig. 1 schematically shows a structure of an array substrate of an X-ray sensor in the related art.
Fig. 2 schematically shows a flowchart of a method of manufacturing an array substrate of an X-ray sensor of the present invention.
Fig. 3 schematically shows a structure diagram of an array substrate of an X-ray sensor of the present invention.
In the figure:
1. a substrate base plate;
2. a gate layer;
3. a gate insulating layer;
4. an active layer;
5. a first electrode layer;
6. a first passivation layer;
7. a first planarizing layer;
8. a second passivation layer;
9. a second electrode layer;
10. a semiconductor layer;
11. a transparent electrode layer;
12. a third passivation layer;
13. a third electrode;
14. a second planarizing layer;
15. and a fourth passivation layer.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the disclosure. One skilled in the relevant art will recognize, however, that the subject matter of the present disclosure can be practiced without one or more of the specific details, or with other methods, components, devices, steps, and the like. In other instances, well-known technical solutions have not been shown or described in detail to avoid obscuring aspects of the present disclosure.
Furthermore, the drawings are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale. The same reference numerals in the drawings denote the same or similar parts, and thus their repetitive description will be omitted.
In the present exemplary embodiment, first, a method for manufacturing an array substrate of an X-ray sensor is provided, and the array substrate of the X-ray sensor may include a substrate 1, and a thin film transistor device and a photodiode device disposed on the substrate 1. Referring to a flowchart of a method of manufacturing an array substrate of an X-ray sensor shown in fig. 2, the method may include the steps of:
step S10, a first planarizing layer 7 is formed over the first passivation layer 6 of the thin film transistor device.
Step S20 is to form a second electrode layer 9 on the first planarizing layer 7, wherein the second electrode layer 9 can shield the thin film transistor device.
In step S30, a photodiode device is formed over the second electrode layer 9.
According to the manufacturing method of the array substrate of the X-ray sensor in the present exemplary embodiment, on one hand, the second electrode layer 9 disposed below the photodiode device shields the thin film transistor device, so that shielding disposed above the photodiode device is avoided, the photosensitive area of the photodiode device is increased, and the sensitivity of the array substrate is improved. On the other hand, the photodiode device and the thin film transistor device are not arranged on the same layer, the design area of the photodiode device can be greatly increased, the pixel filling rate of the array substrate is improved, and the sensitivity is improved.
Next, a method of manufacturing the array substrate of the X-ray sensor in the present exemplary embodiment will be further described.
In step S10, a first planarizing layer 7 is formed over the first passivation layer 6 of the thin film transistor device.
The thin film transistor device may include: the semiconductor device includes a gate layer 2 formed on a substrate 1, a gate insulating layer 3 formed on the gate layer 2, an active layer 4 formed on a portion of the gate insulating layer 3, a first electrode layer 5, i.e., a source drain layer, formed on the active layer 4 and the remaining portion of the gate insulating layer 3, and a first passivation layer 6 formed on the first electrode layer 5.
The gate layer 2, the gate insulating layer 3, the active layer 4, the source drain layer, and the first passivation layer 6 may be formed by an evaporation process, a sputtering process, a photolithography process, or the like.
The substrate base plate 1 may be a glass base plate, a plastic base plate, or other kinds of base plates. The first passivation layer 6 may employ an inorganic insulating film such as silicon nitride, silicon oxide, or the like, or an organic insulating film such as a resin material.
When the first passivation layer 6 is formed, a first via hole may be formed in the first passivation layer 6; the first passivation layer 6 and the first via hole may be simultaneously formed through a photolithography process.
In the present exemplary embodiment, after the first passivation layer 6 is formed, the first planarization layer 7 is formed over the first passivation layer 6, so that the entire upper surface of the thin film transistor device is planarized. The first planarizing layer 7 may be an inorganic insulating film such as silicon nitride, silicon oxide, or the like, or an organic insulating film such as various resin materials. The thickness of the first passivation layer 6 is thin, so that the upper surface of the whole thin film transistor device can be relatively flat.
In forming the first planarizing layer 7, a second via hole may be formed in the first planarizing layer 7; the first planarizing layer 7 and the second via hole, which communicates with the first via hole, may be simultaneously formed by a photolithography process. In the present exemplary embodiment, the second through hole and the first through hole are designed for a concentric rotation shaft.
After the first planarization layer 7 is formed, a second passivation layer 8 may also be formed over the first planarization layer 7. The second passivation layer 8 may be an inorganic insulating film such as silicon nitride, silicon oxide, or the like, or an organic insulating film such as various resin materials. Of course, the second passivation layer 8 may not be provided, and the first planarization layer 7 may achieve the purpose of relatively planarizing and insulating the upper surface of the entire tft device.
When the second passivation layer 8 is formed, a third via hole may be formed in the second passivation layer 8; the second passivation layer 8 and the third through hole, which are sequentially communicated with the second through hole and the first through hole, may be simultaneously formed through a photolithography process. In the present exemplary embodiment, the third through hole, the second through hole and the first through hole are designed as concentric rotating shafts.
In step S20, a second electrode layer 9 is formed over the first planarizing layer 7, and the thin film transistor device can be shielded by the second electrode layer 9.
In the present exemplary embodiment, the second electrode layer 9 is an opaque metal layer. After the second passivation layer 8 is formed, a second electrode layer 9 may be formed on the second passivation layer 8 through an evaporation process, a sputtering process, or the like, and the second electrode layer 9 covers the entire upper surface of the second passivation layer 8, thereby shielding the tft device from the upper light. Of course, in the case where the second passivation layer 8 is not provided, the second electrode layer 9 may be formed on the first planarization layer 7.
During the evaporation, sputtering and the like, the evaporation material is formed not only on the second passivation layer 8 or the first planarization layer 7, but also on the hole walls and the hole bottoms of the first through hole, the second through hole and the third through hole; therefore, the second electrode layer 9 is formed to sequentially penetrate through the third via hole, the second via hole and the first via hole to be connected to the first electrode layer 5 of the thin film transistor device, so that the thin film transistor device can control the switch of the photodiode device and transmit the electrical signal generated by the photovoltaic effect of the photodiode device.
In step S30, a photodiode device is formed over the second electrode layer 9.
The photodiode device may include: a semiconductor layer 10 formed on the second electrode layer 9, a transparent electrode layer 11 formed on the semiconductor layer 10, a third passivation layer 12 formed on the transparent electrode layer 11, and a third electrode 13 formed on the third passivation layer 12; a second planarization layer 14 formed over the third electrode 13 may also be included.
In the present exemplary embodiment, the projection of the semiconductor layer 10 on the substrate 1 can cover the projection of the thin film transistor device on the substrate 1, and the area of the semiconductor layer 10 is increased more than that of the prior art, so that the light sensing area of the photodiode device is increased, and the sensitivity of the array substrate is improved.
In forming the third passivation layer 12, a fourth through hole may be formed in the third passivation layer 12 so that the third electrode 13 may be connected to the transparent electrode layer 11 through the fourth through hole. So set up, third electrode 13 only is as the last electrode of photodiode device, need not be as the sheltering from of thin film transistor device, therefore, the setting of third electrode 13 only need satisfy the resistance requirement can, can design thin shorter, even can also lead to the fact sheltering from to photodiode device, but reduce a lot for the area of sheltering from among the prior art, make the photosensitive area increase of photodiode device, improve the sensitivity of array substrate.
Moreover, although the steps of the methods of the present disclosure are depicted in the drawings in a particular order, this does not require or imply that the steps must be performed in this particular order, or that all of the depicted steps must be performed, to achieve desirable results. Additionally or alternatively, certain steps may be omitted, multiple steps combined into one step execution, and/or one step broken down into multiple step executions, etc.
Further, the present exemplary embodiment also provides an array substrate of an X-ray sensor manufactured by the method for manufacturing an array substrate of an X-ray sensor. The array substrate of the X-ray sensor may include a substrate 1, and a thin film transistor device and a photodiode device disposed on the substrate 1. Referring to the structural diagram of the array substrate of the X-ray sensor shown in fig. 3, the array substrate may further include a first planarization layer 7 and a second electrode layer 9, the first planarization layer 7 is formed on the first passivation layer 6 of the thin film transistor device; a second electrode layer 9 is formed on the first planarizing layer 7, the second electrode layer 9 can shield the thin film transistor device, and the photodiode device is formed on the second electrode layer 9.
In this example embodiment, the array substrate may further include a second passivation layer 8, and the second passivation layer 8 is formed between the first planarization layer 7 and the second electrode layer 9.
In this example embodiment, the array substrate may further include a first via hole, a second via hole, and a third via hole; a first via is formed in the first passivation layer 6; a second through hole is formed in the first planarizing layer 7; a third through hole is formed in the second passivation layer 8; the first through hole, the second through hole and the third through hole are sequentially communicated, and the second electrode layer 9 sequentially penetrates through the third through hole, the second through hole and the first through hole and is connected with the first electrode layer 5 of the thin film transistor device.
In the present exemplary embodiment, the photodiode device may include a semiconductor layer 10 and a transparent electrode layer 11, the semiconductor layer 10 is formed on the second electrode layer 9, and a projection of the semiconductor layer 10 on the substrate base plate 1 may cover a projection of the thin film transistor device on the substrate base plate 1; the transparent electrode layer 11 is formed on the semiconductor layer 10.
In the present exemplary embodiment, the photodiode device may further include a third passivation layer 12, a fourth via, and a third electrode 13 layer; a third passivation layer 12 is formed on the transparent electrode layer 11; a fourth through hole is formed in the third passivation layer 12; and a third electrode 13 formed on the third passivation layer 12 and connected to the transparent electrode layer 11 through the fourth through hole, wherein a projection of the third electrode 13 on the substrate base plate 1 is isolated from a projection of the thin film transistor device on the substrate base plate 1.
The detailed structure and manufacturing method of the array substrate of the X-ray sensor have been described above, and are not described herein again.
Further, the present exemplary embodiment also provides an X-ray sensor, which may include the array substrate of the X-ray sensor described above. The detailed structure and manufacturing method of the array substrate of the X-ray sensor have been described above, and are not described herein again.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.
Claims (8)
1. A manufacturing method of an array substrate of an X-ray sensor, the array substrate of the X-ray sensor comprises a substrate, and a thin film transistor device and a photodiode device which are arranged on the substrate, and the manufacturing method comprises the following steps:
forming a first planarization layer over a first passivation layer of a thin film transistor device;
forming a second electrode layer on the first planarization layer, wherein the second electrode layer can shield the thin film transistor device and is connected to a source/drain electrode of the thin film transistor device;
forming a photodiode device over the second electrode layer, and the second electrode layer is connected to a semiconductor layer of the photodiode device;
the photodiode device further comprises a third electrode, and the projection of the third electrode on the substrate base plate is isolated from the projection of the thin film transistor device on the substrate base plate;
after forming the first planarizing layer, the manufacturing method further includes:
a second passivation layer is formed over the first planarization layer.
2. The method of manufacturing an array substrate for an X-ray sensor according to claim 1, further comprising:
forming a first via hole in the first passivation layer while forming the first passivation layer;
forming a second via in the first planarization layer while forming the first planarization layer;
forming a third via hole in the second passivation layer while forming the second passivation layer;
the first through hole, the second through hole and the third through hole are sequentially communicated, so that the second electrode layer sequentially penetrates through the third through hole, the second through hole and the first through hole to be connected with the first electrode layer of the thin film transistor device.
3. The method of manufacturing an array substrate for an X-ray sensor according to claim 1, wherein forming a photodiode device over the second electrode layer comprises:
forming a semiconductor layer on the second electrode layer, wherein the projection of the semiconductor layer on the substrate base plate can cover the projection of the thin film transistor device on the substrate base plate;
a transparent electrode layer is formed over the semiconductor layer.
4. An array substrate of an X-ray sensor, the array substrate of the X-ray sensor comprises a substrate, and a thin film transistor device and a photodiode device which are arranged on the substrate, and the array substrate further comprises:
a first planarization layer formed over the first passivation layer of the thin film transistor device;
the second electrode layer is formed on the first planarization layer and can shield the thin film transistor device, the photodiode device is formed on the second electrode layer, the second electrode layer is connected to a source electrode and a drain electrode of the thin film transistor device, and the second electrode layer is connected with a semiconductor layer of the photodiode device;
the photodiode device further comprises a third electrode, and the projection of the third electrode on the substrate base plate is isolated from the projection of the thin film transistor device on the substrate base plate;
the array substrate further includes:
a second passivation layer formed between the first planarization layer and the second electrode layer.
5. The array substrate of X-ray sensors of claim 4, further comprising:
a first via formed in the first passivation layer;
a second via formed in the first planarization layer;
a third via hole formed in the second passivation layer;
the first through hole, the second through hole and the third through hole are sequentially communicated, and the second electrode layer sequentially penetrates through the third through hole, the second through hole and the first through hole and is connected with the first electrode layer of the thin film transistor device.
6. The array substrate for an X-ray sensor according to claim 4, wherein the photodiode device comprises:
a semiconductor layer formed on the second electrode layer, wherein the projection of the semiconductor layer on a substrate can cover the projection of the thin film transistor device on the substrate;
and the transparent electrode layer is formed on the semiconductor layer.
7. The array substrate for an X-ray sensor according to claim 6, wherein the photodiode device further comprises:
a third passivation layer formed on the transparent electrode layer;
a fourth via hole formed in the third passivation layer;
the third electrode is formed on the third passivation layer and penetrates through the fourth through hole to be connected with the transparent electrode layer.
8. An X-ray sensor, comprising:
an array substrate for an X-ray sensor according to any one of claims 4 to 7.
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| CN110047859A (en) * | 2019-04-24 | 2019-07-23 | 北京京东方传感技术有限公司 | Sensor and preparation method thereof |
| US20230261013A1 (en) * | 2020-04-16 | 2023-08-17 | Egis Technology Inc. | Photoelectric sensor |
| CN111933737A (en) * | 2020-07-24 | 2020-11-13 | 上海思立微电子科技有限公司 | Photoelectric sensor manufactured by TFT (thin film transistor) process, manufacturing method and electronic equipment |
| CN113064307B (en) * | 2021-03-19 | 2022-02-22 | 深圳市华星光电半导体显示技术有限公司 | Array substrate, manufacturing method and display panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100935644B1 (en) * | 2009-03-17 | 2010-01-07 | 실리콘 디스플레이 (주) | Image sensor for x-ray and method of manufacturing the same |
| CN102790067A (en) * | 2012-07-26 | 2012-11-21 | 北京京东方光电科技有限公司 | Sensor and manufacturing method thereof |
| CN102881701A (en) * | 2012-09-19 | 2013-01-16 | 北京京东方光电科技有限公司 | TFT (thin film transistor) flat X-ray sensor and method for manufacturing same |
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| CN102790067A (en) * | 2012-07-26 | 2012-11-21 | 北京京东方光电科技有限公司 | Sensor and manufacturing method thereof |
| CN102881701A (en) * | 2012-09-19 | 2013-01-16 | 北京京东方光电科技有限公司 | TFT (thin film transistor) flat X-ray sensor and method for manufacturing same |
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