CN108268708A - Know the method and system of vacuum electron device Parameters variation situation under Warm status - Google Patents
Know the method and system of vacuum electron device Parameters variation situation under Warm status Download PDFInfo
- Publication number
- CN108268708A CN108268708A CN201711498733.2A CN201711498733A CN108268708A CN 108268708 A CN108268708 A CN 108268708A CN 201711498733 A CN201711498733 A CN 201711498733A CN 108268708 A CN108268708 A CN 108268708A
- Authority
- CN
- China
- Prior art keywords
- electron device
- vacuum electron
- analyzer
- thermal deformation
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/10—Geometric CAD
- G06F30/17—Mechanical parametric or variational design
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Pure & Applied Mathematics (AREA)
- Mathematical Optimization (AREA)
- Mathematical Analysis (AREA)
- Computer Hardware Design (AREA)
- Evolutionary Computation (AREA)
- General Engineering & Computer Science (AREA)
- Computational Mathematics (AREA)
- Management, Administration, Business Operations System, And Electronic Commerce (AREA)
- Electron Beam Exposure (AREA)
Abstract
A kind of method and system that can accurately know vacuum electron device Parameters variation situation under Warm status.It initially sets up vacuum electron device model and calculates its note wave interaction；Heat analysis is carried out according to the Heat-Source Parameters that note wave interaction obtains；Thermal deformation parameter is calculated according to the Temperature Distribution that heat analysis obtains；Note wave interaction is recalculated according to vacuum electron device model described in thermal deformation parameters revision, obtains the performance parameter of vacuum electron device in hot state.The present invention ultimately forms the Cooperative Analysis loop that the hot thermal deformation of note wave interaction notes wave interaction by the parameter of vacuum electron device model under thermal deformation parameters revision Warm status.By the closed-loop system, the present invention can be analyzed comprehensively under working condition, and especially under Warm status, the working characteristics of vacuum electron device can accurately know influence of the Warm status to vacuum electron device performance.
Description
Technical field
The present invention relates to vacuum electronics fields more particularly to one kind can accurately know device parameter performance under Warm status
The method and system of changing condition.
Background technology
Travelling-wave tubes for amplifying the vacuum electron device of high-frequency signal, has the advantages such as broadband, high power as a kind of,
It is the core devices in radar, communication, electronic warfare system.Travelling-wave tubes mainly utilizes electronics note and electromagnetic field of high frequency phase interaction
With by electronics note energy transfer to electromagnetic field of high frequency, realization signal amplifies, and exports the signal of certain power.
It is found in engineer application, for travelling-wave tubes when vacuum electron devices work, Warm status is to travelling-wave tubes itself in pipe
Working performance can have an important influence on.One of an important factor for temperature is influence device reliability, stability：In device temperature compared with
Thermal deformation can occur for Gao Shi, the slow-wave structure in device etc., thus influence the high frequency characteristics of device, cause the working characteristics of device
Deviation theory value.
For travelling-wave tubes it is demonstrated experimentally that output terminal helix overheat can cause travelling-wave tubes output power to decline.When in pipe
When the temperature is excessively high, a large amount of gases can be released in pipe, cause traveling wave tube failure.Therefore, the vacuum electron devices such as research travelling-wave tubes
For Warm status for improving the design of travelling-wave tubes, improving the performance parameter of each component has very big reference significance during work.
In particular, at present, whether Warm status can have an impact travelling-wave tubes backward wave oscillation situation that (whether Warm status, which can excite, is returned
The parameters such as wave oscillation or the amplitude to backward wave oscillation are made " contribution "), and then travelling-wave tubes output parameter is significantly affected, at present
It is unclear.It is known that backward wave oscillation can cause travelling-wave tubes power drop at the working frequency of needs, it can also cause other
It shakes or modulates other signals, so as to generate some other parasitic signals, influence travelling-wave tubes performance.Backward wave oscillation is limitation
The principal element of travelling-wave tubes output power, and the high frequency characteristics distortion caused by Warm status downlink wave duct slow-wave structure thermal deformation,
Corresponding backward wave oscillation is very likely excited, is changed so as to cause travelling-wave tubes output parameter.It is known that Warm status can influence to go
The high frequency characteristics of wave duct.But what how the backward wave oscillation situation of specific Warm status downlink wave duct specifically changed and thus brought
How output parameter changes, and there is no final conclusion at present.
Therefore, it is badly in need of a kind of can accurately knowing the method that Warm status influences vacuum electron device performance parameter at present.
After learning influence of the Warm status to vacuum electron device performance parameter, this improvement Warm status can be based on to improve vacuum electron device
Working performance, for optimize vacuum electron device design reference is provided.
Invention content
In order to solve the shortcomings of the prior art, the purpose of the present invention is to provide vacuum electronic devices under a kind of Warm status
The computational methods of part performance parameter and the system for calculating vacuum electron device performance parameter under Warm status.
First, to achieve the above object, a kind of computational methods of vacuum electron device performance parameter under Warm status are proposed, are wrapped
Include following steps：
The first step establishes vacuum electron device model, inputs the running parameter of the vacuum electron device, evaluation work shape
The note wave interaction of the vacuum electron device under state obtains Heat-Source Parameters；
The Heat-Source Parameters are inputted the vacuum electron device model, carry out heat analysis, obtain the vacuum by second step
The Temperature Distribution of electronic device；
Third walks, and calculates thermal deformation parameter according to the Temperature Distribution of the vacuum electron device, joins according to the thermal deformation
Number corrects the vacuum electron device model；
4th step walks the revised vacuum electron device model according to the third, re-enters the vacuum electric
The running parameter of sub- device, the note wave interaction of the vacuum electron device, obtains the vacuum electronic under evaluation work state
The performance parameter of device.
Further, in the above method, the performance ginseng that recurrence corrects the vacuum electron device is further included after the 4th step
Several steps, is as follows；
The second step is recycled to the 4th step, until the temperature of the vacuum electron device obtained in the second step
In degree distribution, temperature and the last result difference calculated are less than given threshold in pipe, export and acquisition is calculated under this Temperature Distribution
The vacuum electron device performance parameter, and compare with the performance parameter under original state, obtain Warm status to vacuum
The influence of electronic device performance parameter.
Specifically, in the above method, the running parameter of the vacuum electron device includes the work of the vacuum electron device
Make voltage, beam current, frequency input signal, input signal amplitude.
In the above method, the Heat-Source Parameters include the 3D distributions of ohmic loss in the vacuum electron device, electronics bangs
Hit 3D distributions, the electronics heat injection radiation of loss.
In specific calculating process, the electronics heat injection radiation data in the Heat-Source Parameters in the above method is described second
It carries out being equivalent to grey-body radiation data, the grey-body radiation data and the electronics heat injection radiation energy phase during heat analysis in step
Deng.
Specifically, in the above method, the performance parameter of the vacuum electron device includes output power and backward wave oscillation shape
Whether condition, occur and its amplitude size including backward wave oscillation.
In the above method, the vacuum electron device includes travelling-wave tubes, klystron, magnetron etc..
Secondly, to achieve the above object, it is also proposed that a kind of system for calculating vacuum electron device performance parameter under Warm status,
Including：Vacuum electron device model, note wave interaction analyzer, thermal analyzer and thermal deformation analyzer；
The vacuum electron device model, note wave interaction analyzer, thermal analyzer and thermal deformation analyzer ring connect, and form
Closed-loop system；Wherein,
The input terminal of the vacuum electron device model is connect with the output terminal of the thermal deformation analyzer, for according to institute
State the parameter of vacuum electron device model described in the thermal deformation parameters revision of thermal deformation analyzer output；Vacuum electron device model
Output terminal connect an input terminal of the note wave interaction analyzer, thermal analyzer and thermal deformation analyzer simultaneously, be used for
Parameter is provided for the note wave interaction analyzer, thermal analyzer and thermal deformation analyzer；
One input terminal of the note wave interaction analyzer connects the output terminal of the vacuum electron device model, described
Another input terminal of note wave interaction analyzer is used to input the running parameter of the vacuum electron device；The note wave interaction
It is used to calculate the note wave interaction of the vacuum electron device model according to the running parameter with analyzer, obtains Heat-Source Parameters
And performance parameter and the output of the vacuum electron device model；
One input terminal of the thermal analyzer connects the output terminal of the vacuum electron device model, the thermal analyzer
Another input terminal connection it is described note wave interaction analyzer output terminal；The thermal analyzer is used for mutual according to the note wave
The Heat-Source Parameters of function analysis device output calculate temperature profile data and the output of the vacuum electron device model；
One input terminal of the thermal deformation analyzer connects the output terminal of the vacuum electron device model, the hot shape
Another input terminal for becoming analyzer connects the output terminal of the thermal analyzer；The thermal deformation analyzer is used for according to the heat
The temperature profile data of analyzer output calculates the thermal deformation parameter of the vacuum electron device model and exports.
Further, in above system, the note wave interaction analyzer uses CST (Computer Simulation
Technology) the CST particles operating room under system or using in MTSS systems, MAGIC systems or CHRISTINE systems
It is one or more；
The thermal analyzer uses ANSYS systems；
The thermal deformation analyzer uses ANSYS systems.
Based on above-mentioned technology, the present invention also provides a kind of design method of vacuum electron device simultaneously, which is characterized in that root
According to the Temperature Distribution of the vacuum electron device obtained in the second step, the high temperature location in the vacuum electron device
Add heat sink；
The thermal deformation parameter obtained in being walked according to the third, the component made using the small material of thermal deformation coefficient
Replace the component that thermal deformation parameter is high in the vacuum electron device.
Advantageous effect
The present invention by carrying out vacuum electron device note wave interaction analysis successively, heat analysis obtains thermal deformation parameter,
So as to correct the parameter of vacuum electron device model under Warm status, note wave interaction-hot-hot deformation-note wave interaction is ultimately formed
Cooperative Analysis loop.By the closed-loop system, the present invention can be analyzed comprehensively under working condition, especially Warm status
Under, the working characteristics of vacuum electron device can accurately know that Warm status changes to what the performance parameter of vacuum electron device was brought
Become (including output power, backward wave oscillation situation etc.).
Further, the electronics heat injection in Heat-Source Parameters is radiated and carried out when carrying out CALCULATION OF THERMAL thermal deformation by the present invention
It is equivalent, energy caused by electronics heat injection radiation is analyzed with grey-body radiation model.Simplify calculating and thermal deformation is analyzed more
It is accurate.
Meanwhile the influence that the present invention can also bring travelling-wave tubes performance by knowing Warm status, it can be from improvement Warm status
Angle travelling-wave tubes is optimized.Vacuum electronic device described in the part replacement made using the small material of thermal deformation coefficient
The high component of thermal deformation parameter in part, and the high temperature location in the vacuum electron device adds heat sink, to offset hot shape
Influence of the state to travelling-wave tubes performance parameter.The structure of vacuum electron device, material, running parameter are carried out by above-mentioned measure excellent
Change, improve output power, inhibit backward wave oscillation, enhance its functional reliability, improve its working performance.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification
It obtains it is clear that being understood by implementing the present invention.
Description of the drawings
Attached drawing is used to provide further understanding of the present invention, and a part for constitution instruction, and with the present invention's
Embodiment together, for explaining the present invention, is not construed as limiting the invention.In the accompanying drawings：
Fig. 1 is the flow chart of the computational methods of vacuum electron device performance parameter under the Warm status according to the present invention；
Fig. 2 is the block diagram for calculating the system of vacuum electron device performance parameter under Warm status according to the present invention；
Fig. 3 is the structure diagram of helix TWT；
Fig. 4 is helix TWT ohmic loss 3D distribution maps in the embodiment of the present invention；
Fig. 5 is that 3D distribution maps are lost in helix TWT electron bombardment in the embodiment of the present invention；
Fig. 6 is helix TWT temperature 3D distribution maps in the embodiment of the present invention；
Fig. 7 is helix TWT thermal deformation 3D distribution maps in the embodiment of the present invention.
Specific embodiment
The preferred embodiment of the present invention is illustrated below in conjunction with attached drawing, it should be understood that preferred reality described herein
It applies example to be merely to illustrate and explain the present invention, be not intended to limit the present invention.It is also possible to apply the invention to study Warm status to speed
Adjust the influence of the vacuum electron devices performances such as pipe, magnetron.
Fig. 1 is the flow chart of the computational methods of vacuum electron device performance parameter under the Warm status according to the present invention, including
Following steps：The computational methods of vacuum electron device performance parameter, include the following steps under a kind of Warm status：
The first step establishes vacuum electron device model, inputs the running parameter of the vacuum electron device, evaluation work shape
The note wave interaction of the vacuum electron device under state obtains Heat-Source Parameters；
The Heat-Source Parameters are inputted the vacuum electron device model, carry out heat analysis, obtain the vacuum by second step
The Temperature Distribution of electronic device；
Third walks, and calculates thermal deformation parameter according to the Temperature Distribution of the vacuum electron device, joins according to the thermal deformation
Number corrects the vacuum electron device model；
4th step walks the revised vacuum electron device model according to the third, re-enters the vacuum electric
The running parameter of sub- device, the note wave interaction of the vacuum electron device, obtains the vacuum electronic under evaluation work state
The performance parameter of device.
Further, in the above method, the performance ginseng that recurrence corrects the vacuum electron device is further included after the 4th step
Several steps, is as follows；
The second step is recycled to the 4th step, until the temperature of the vacuum electron device obtained in the second step
In degree distribution, temperature and the last result difference calculated are less than given threshold in pipe, export and acquisition is calculated under this Temperature Distribution
The vacuum electron device performance parameter, and compare with the performance parameter under original state, obtain Warm status to vacuum
The influence of electronic device performance parameter.The setting of threshold value is to reach a certain stationary value in order to calculate and stop.If necessary to precision
It is very high, just threshold value is set it is smaller, such as 1 DEG C；If necessary to improve analyze speed, calculation amount is reduced, then is improved threshold value,
Such as 10 DEG C.Threshold value is determined by required computational accuracy.
Specifically, in the above method, the running parameter of the vacuum electron device includes the work of the vacuum electron device
Make voltage, beam current, frequency input signal, input signal amplitude.
In the above method, the Heat-Source Parameters include the 3D distributions of ohmic loss in the vacuum electron device, electronics bangs
Hit 3D distributions, the electronics heat injection radiation of loss.
In specific calculating process, the electronics heat injection radiation data in the Heat-Source Parameters in the above method is described second
It carries out being equivalent to grey-body radiation data, the grey-body radiation data and the electronics heat injection radiation energy phase during heat analysis in step
Deng.
Specifically, in the above method, the performance parameter of the vacuum electron device includes output power and backward wave oscillation shape
Whether condition, occur and its amplitude size including backward wave oscillation.
In the above method, the vacuum electron device includes travelling-wave tubes, klystron, magnetron etc..
Based on the above method, vacuum electron device performance parameter variations situation is under calculating Warm status shown in Fig. 2
In the block diagram of system, system provided by the present invention includes altogether：Vacuum electron device model, note wave interaction analyzer, more physics
Thermal analyzer and structural stress in field (" multiple physical field " includes the parameters such as heat, stress, deformation, electricity, when all referring to heat analysis)
Solver (specifically uses thermal deformation analyzer)；
The vacuum electron device model, note wave interaction analyzer, thermal analyzer and thermal deformation analyzer ring connect, and form
Closed-loop system；Wherein,
The input terminal of the vacuum electron device model is connect with the output terminal of the thermal deformation analyzer, for according to institute
State the parameter of vacuum electron device model described in the thermal deformation parameters revision of thermal deformation analyzer output；Vacuum electron device model
Output terminal connect an input terminal of the note wave interaction analyzer, thermal analyzer and thermal deformation analyzer simultaneously, be used for
Parameter is provided for the note wave interaction analyzer, thermal analyzer and thermal deformation analyzer；
One input terminal of the note wave interaction analyzer connects the output terminal of the vacuum electron device model, described
Another input terminal of note wave interaction analyzer is used to input the running parameter of the vacuum electron device；The note wave interaction
It is used to calculate the note wave interaction of the vacuum electron device model according to the running parameter with analyzer, obtains Heat-Source Parameters
And performance parameter and the output of the vacuum electron device model；
One input terminal of the thermal analyzer connects the output terminal of the vacuum electron device model, the thermal analyzer
Another input terminal connection it is described note wave interaction analyzer output terminal；The thermal analyzer is used for mutual according to the note wave
The Heat-Source Parameters of function analysis device output calculate temperature profile data and the output of the vacuum electron device model；
One input terminal of the thermal deformation analyzer connects the output terminal of the vacuum electron device model, the hot shape
Another input terminal for becoming analyzer connects the output terminal of the thermal analyzer；The thermal deformation analyzer is used for according to the heat
The temperature profile data of analyzer output calculates the thermal deformation parameter of the vacuum electron device model and exports.
Further, in above system, the note wave interaction analyzer using the CST particles operating room under CST systems or
Using one or more in MTSS systems, MAGIC systems or CHRISTINE systems；
The thermal analyzer uses ANSYS systems；
The thermal deformation analyzer uses ANSYS systems.
Based on above-mentioned technology, the present invention also provides a kind of design method of vacuum electron device simultaneously, which is characterized in that root
According to the Temperature Distribution of the vacuum electron device obtained in the second step, the high temperature location in the vacuum electron device
Add heat sink；
The thermal deformation parameter obtained in being walked according to the third, the component made using the small material of thermal deformation coefficient
Replace the component that thermal deformation parameter is high in the vacuum electron device.
Specifically by taking certain model 500W helix TWT structures shown in Fig. 3 as an example, operating voltage 9600V, bandwidth of operation
For 10GHz.Travelling-wave tubes 1 is mainly by electron gun 2, helix 5, supporting rod 6, shell 7, periodic perperiodic permanent magnet focusing structure PPM8, input
Window 9, output window 10, collector 11 form.Helix TWT 1 in the operating condition, by 2 launching electronics note 3 of electron gun, electronics
Note 3 passes through the slow-wave structure being made of helix 5, supporting rod 6, shell 7, and electronics note 3 is by periodic perperiodic permanent magnet focusing during this
Structure (PPM) 8 keeps convergence state, is finally received by collector 11；Electromagnetic field of high frequency 4 is inputted by input window 9, in helix
5th, it is transmitted in the slow-wave structure that supporting rod 6, shell 7 are formed, interaction (note wave interaction occurs with the electronics note 3 in traveling
With), electronics note 3 is transferred the energy in electromagnetic field of high frequency 4, and electromagnetic field of high frequency 4 is amplified, and is finally exported from output window 10.
When travelling-wave tubes 1 works, electromagnetic field of high frequency 4 can generate power attenuation in transmission process, these losses are distributed in helix 5, folder
Bar 6, shell 7, output window 10 are held, the energy of electromagnetic field of loss is converted into thermal energy, this is ohmic loss.Electronics note 3 is being propagated through
Cheng Zhong, a small amount of electrons bombardment helix 3 and other assemblies, generate thermal energy, this is lost for electron bombardment；3 meeting of electronics note simultaneously
Radiations heat energy and a kind of heat source, this is radiated for electronics heat injection.
Technical solution of the present invention initially sets up vacuum electron device model and calculates its note wave interaction in certain Frequency point,
Gain is obtained as 48dB, output power 506W, backward wave amplitude is 0.0126V (and backward wave amplitude does not have sustained growth), together
When obtained Heat-Source Parameters, the 3D that 3D including ohmic loss distribution (as shown in Figure 4) and electron bombardment are lost is distributed (such as Fig. 5
It is shown), it is found that ohmic loss is focused primarily upon on helix end 15-20 circles and output window inner wire, peak value for 2.3 ×
1010W/m3, electron bombardment, which is lost, concentrates on 20 circle of helix end, and peak value is 1.27 × 1010W/m3.Then according to note wave interaction
Heat analysis is carried out with the Heat-Source Parameters of acquisition, obtains temperature 3D distributions (as shown in Figure 6), it is found that high-temperature area concentrates on helix
End and output window inner wire, maximum temperature are 334 DEG C (607K)；Thermal deformation is calculated further according to the Temperature Distribution that heat analysis obtains
Parameter obtains the 3D distributions (as shown in Figure 7) of thermal deformation, it is found that helix and output window inner wire thermal deformation are larger, helix
Thermal deformation increases with fore-and-aft distance and is increased, and maximum thermal deformation is 15.7 μm (0.0157mm) in travelling-wave tubes, in output window
On conductor；Finally the vacuum electron device model according to thermal deformation parameters revision recalculates note wave interaction, obtains vacuum
The performance parameter of electronic device in hot state including output power and backward wave oscillation situation, it is found that backward wave amplitude is
0.0518V, more than 4 times when not considering thermal deformation, and backward wave amplitude increases at any time, illustrates backward wave oscillation, simultaneously
Output power is reduced to 463W, reduces 43W.
In above-mentioned calculating process, the diverging situation in communication process is noted according to gun cathode temperature and electronics,
Its temperature somewhere can be extrapolated.Its heat radiation power is obtained by theoretical calculation.Electronics note is equivalent to have specific
The grey body of emissivity (its radiation energy is equivalent to electronics note emitted energy).As infrared source in thermal analyzer, with
Helix, supporting rod, shell are in thermal equilibrium state, calculate its influence to Warm status in pipe
The present invention forms note wave interaction by the parameter of vacuum electron device model under thermal deformation parameters revision Warm status
With the Cooperative Analysis loop of-hot-hot deformation-note wave interaction.By the closed-loop system, the present invention can comprehensively analyze work
Under state, especially under Warm status, the working characteristics of vacuum electron device can know Warm status to vacuum electron device performance
Influence.
When providing reference for the optimization design of travelling-wave tubes using the technology of the present invention, by taking above-mentioned travelling-wave tubes as an example.Due to
It learns, the localized hyperthermia of the travelling-wave tubes in the operating condition can cause backward wave oscillation, reduce output power, therefore, to improve
Travelling-wave tubes performance inhibits backward wave oscillation, it can be optimized by reducing temperature in pipe, reduction thermal deformation.Specifically arrange
It applies for example, can the higher heat sink of thermal conductivity be installed in travelling-wave tubes end to reduce temperature；The material for selecting coefficient of thermal expansion small
Material prepares output window inner wire, to reduce thermal deformation, etc..
Although the present embodiment is illustrated by taking helix TWT as an example, it is obvious to the person skilled in the art that
It is also possible to apply the invention to study influence of the Warm status to the vacuum electron devices performance such as klystron, magnetron.But other devices
Be not in backward wave oscillation phenomenon in part, so for these devices, what is mainly studied is the shadow of its output power heating status
It rings.
One of ordinary skill in the art will appreciate that：The foregoing is only a preferred embodiment of the present invention, and does not have to
In the limitation present invention, although the present invention is described in detail referring to the foregoing embodiments, for those skilled in the art
For, still can to foregoing embodiments record technical solution modify or to which part technical characteristic into
Row equivalent replacement.All within the spirits and principles of the present invention, any modification, equivalent replacement, improvement and so on should all include
Within protection scope of the present invention.
Claims (10)
1. one kind knows vacuum electron device Parameters variation situation method under Warm status, which is characterized in that step includes：
The first step establishes vacuum electron device model, inputs the running parameter of the vacuum electron device, under evaluation work state
The note wave interaction of the vacuum electron device obtains Heat-Source Parameters；
The Heat-Source Parameters are inputted the vacuum electron device model, carry out heat analysis, obtain the vacuum electronic by second step
The Temperature Distribution of device；
Third walks, and calculates thermal deformation parameter according to the Temperature Distribution of the vacuum electron device, is repaiied according to the thermal deformation parameter
Just described vacuum electron device model；
4th step walks the revised vacuum electron device model according to the third, re-enters the vacuum electronic device
The running parameter of part, the note wave interaction of the vacuum electron device, obtains the vacuum electron device under evaluation work state
Performance parameter.
2. the method as described in claim 1 for knowing vacuum electron device Parameters variation situation under Warm status, which is characterized in that
The step of recurrence corrects the performance parameter of the vacuum electron device is further included after 4th step, is as follows：
The second step is recycled to the 4th step, until the temperature of the vacuum electron device point obtained in the second step
In cloth, temperature is less than given threshold with the last result difference calculated in pipe, exports the institute that acquisition is calculated under this Temperature Distribution
The performance parameter of vacuum electron device is stated, and is compared with the performance parameter under original state, obtains Warm status to vacuum electronic
The influence of device parameter performance.
3. the method as described in claim 1 for knowing vacuum electron device Parameters variation situation under Warm status, which is characterized in that
The running parameter of the vacuum electron device includes the operating voltage of the vacuum electron device, beam current, input signal
Frequency, input signal amplitude.
4. the method as described in claim 1 for knowing vacuum electron device Parameters variation situation under Warm status, which is characterized in that
The Heat-Source Parameters include the 3D distributions, the 3D distributions of electron bombardment loss, electronics of ohmic loss in the vacuum electron device
Heat injection radiates.
5. the method as claimed in claim 3 for knowing vacuum electron device Parameters variation situation under Warm status, which is characterized in that
Electronics heat injection radiation data in the Heat-Source Parameters carries out being equivalent to grey-body radiation data during heat analysis in the second step,
The grey-body radiation data are equal with the electronics heat injection radiation energy.
6. the method as described in claim 1 for knowing vacuum electron device Parameters variation situation under Warm status, which is characterized in that
The performance parameter of the vacuum electron device includes output power and backward wave oscillation situation.
7. claim 1 to claim 5 it is any as described in know vacuum electron device Parameters variation situation under Warm status
Method, which is characterized in that the vacuum electron device includes but not limited to travelling-wave tubes, klystron, magnetron.
8. a kind of system for knowing vacuum electron device Parameters variation situation under Warm status, which is characterized in that including vacuum electronic
Device model, note wave interaction analyzer, thermal analyzer and thermal deformation analyzer；
The vacuum electron device model, note wave interaction analyzer, thermal analyzer and thermal deformation analyzer ring connect, and form closed loop
System；Wherein,
The input terminal of the vacuum electron device model is connect with the output terminal of the thermal deformation analyzer, for according to the heat
The parameter of vacuum electron device model described in the thermal deformation parameters revision of deformation analysis device output；Vacuum electron device model it is defeated
Outlet connects an input terminal of the note wave interaction analyzer, thermal analyzer and thermal deformation analyzer simultaneously, for for institute
It states note wave interaction analyzer, thermal analyzer and thermal deformation analyzer and parameter is provided；
One input terminal of the note wave interaction analyzer connects the output terminal of the vacuum electron device model, the note wave
Another input terminal of interaction analyzer is used to input the running parameter of the vacuum electron device；The note wave interaction point
Parser is used to calculate the note wave interaction of the vacuum electron device model according to the running parameter, obtain Heat-Source Parameters and
The performance parameter of the vacuum electron device model and output；
One input terminal of the thermal analyzer connects the output terminal of the vacuum electron device model, the thermal analyzer it is another
The output terminal of one input terminal connection note wave interaction analyzer；The thermal analyzer is used for according to the note wave interaction
The Heat-Source Parameters of analyzer output calculate temperature profile data and the output of the vacuum electron device model；
One input terminal of the thermal deformation analyzer connects the output terminal of the vacuum electron device model, the thermal deformation point
Another input terminal of parser connects the output terminal of the thermal analyzer；The thermal deformation analyzer is used for according to the heat analysis
The temperature profile data of device output calculates the thermal deformation parameter of the vacuum electron device model and exports.
9. the system as claimed in claim 7 for knowing vacuum electron device Parameters variation situation under Warm status, which is characterized in that
The note wave interaction analyzer using the CST particles operating room under CST systems or using MTSS systems, MAGIC systems or
It is one or more in CHRISTINE systems；
The thermal analyzer uses ANSYS systems；
The thermal deformation analyzer uses ANSYS systems.
It is 10. a kind of based on knowing the true of vacuum electron device Parameters variation situation method under Warm status as described in claim 1
The design method of empty electronic device, which is characterized in that according to the temperature of the vacuum electron device obtained in the second step
Distribution, the high temperature location in the vacuum electron device add heat sink；
The thermal deformation parameter obtained in being walked according to the third, the part replacement made using the small material of thermal deformation coefficient
The high component of thermal deformation parameter in the vacuum electron device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711498733.2A CN108268708B (en) | 2017-12-29 | 2017-12-29 | Method and system for acquiring parameter change condition of vacuum electronic device in thermal state |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711498733.2A CN108268708B (en) | 2017-12-29 | 2017-12-29 | Method and system for acquiring parameter change condition of vacuum electronic device in thermal state |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108268708A true CN108268708A (en) | 2018-07-10 |
| CN108268708B CN108268708B (en) | 2021-04-06 |
Family
ID=62773055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711498733.2A Active CN108268708B (en) | 2017-12-29 | 2017-12-29 | Method and system for acquiring parameter change condition of vacuum electronic device in thermal state |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108268708B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111781477A (en) * | 2020-06-05 | 2020-10-16 | 东南大学 | Method for analyzing working state electron beam motion state of space traveling wave tube |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101894723A (en) * | 2010-07-09 | 2010-11-24 | 电子科技大学 | Collector radiation radiator of space traveling wave tube |
| CN102848079A (en) * | 2011-06-30 | 2013-01-02 | 魏芳 | Power increasing method for high-power computerized numerical control (CNC) laser cutting machine |
| CN104537154A (en) * | 2014-12-09 | 2015-04-22 | 天津大学 | Permanent magnetic spherical motor temperature rise forecasting method based on three-dimensional equivalent heat network model |
| CN104951626A (en) * | 2015-07-14 | 2015-09-30 | 哈尔滨工业大学 | ANSYS-APDL (ANSYS parametric design language) development based method for performing transient heat-structure coupling analysis on spherical optical bow cap in complex heat environment |
| US20160209594A1 (en) * | 2015-01-16 | 2016-07-21 | The Board Of Trustees Of The University Of Illinois | System and method for linear non-reciprocal communication and isolation |
| CN106783477A (en) * | 2016-12-13 | 2017-05-31 | 电子科技大学 | Angle radial direction logarithm Meanderline microstrip slow-wave structure based on photonic band gap structure loading |
| CN107122572A (en) * | 2017-06-09 | 2017-09-01 | 电子科技大学 | A kind of Euler's method for simulating dominant wave interaction of traveling wave tubes |
-
2017
- 2017-12-29 CN CN201711498733.2A patent/CN108268708B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101894723A (en) * | 2010-07-09 | 2010-11-24 | 电子科技大学 | Collector radiation radiator of space traveling wave tube |
| CN102848079A (en) * | 2011-06-30 | 2013-01-02 | 魏芳 | Power increasing method for high-power computerized numerical control (CNC) laser cutting machine |
| CN104537154A (en) * | 2014-12-09 | 2015-04-22 | 天津大学 | Permanent magnetic spherical motor temperature rise forecasting method based on three-dimensional equivalent heat network model |
| US20160209594A1 (en) * | 2015-01-16 | 2016-07-21 | The Board Of Trustees Of The University Of Illinois | System and method for linear non-reciprocal communication and isolation |
| CN104951626A (en) * | 2015-07-14 | 2015-09-30 | 哈尔滨工业大学 | ANSYS-APDL (ANSYS parametric design language) development based method for performing transient heat-structure coupling analysis on spherical optical bow cap in complex heat environment |
| CN106783477A (en) * | 2016-12-13 | 2017-05-31 | 电子科技大学 | Angle radial direction logarithm Meanderline microstrip slow-wave structure based on photonic band gap structure loading |
| CN107122572A (en) * | 2017-06-09 | 2017-09-01 | 电子科技大学 | A kind of Euler's method for simulating dominant wave interaction of traveling wave tubes |
Non-Patent Citations (3)
| Title |
|---|
| GAHLAUT, V 等: "Thermal behaviour of a periodic structure supported by dielectric rods in vacuum", 《HEAT AND MASS TRANSFER》 * |
| 李延威: "空间行波管收集极的热分析", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
| 颜胜美: "热形变对螺旋线行波管性能参数的影响研究", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111781477A (en) * | 2020-06-05 | 2020-10-16 | 东南大学 | Method for analyzing working state electron beam motion state of space traveling wave tube |
| CN111781477B (en) * | 2020-06-05 | 2022-03-18 | 东南大学 | Method for analyzing working state electron beam motion state of space traveling wave tube |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108268708B (en) | 2021-04-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Yan et al. | Investigation on high average power operations of gyro-TWTs with dielectric-loaded waveguide circuits | |
| Whaley | Practical design of emittance dominated linear beams for RF amplifiers | |
| Chong et al. | Q/V-band high-power uplink helix TWT for future high-data-rate communications | |
| CN108268708A (en) | Know the method and system of vacuum electron device Parameters variation situation under Warm status | |
| CN107093539B (en) | A kind of Terahertz phase velocity gradual change folded waveguide oscillator | |
| Jiang et al. | Numerical design and optimization of a curved collector for a Q-band gyro-traveling wave tube | |
| Xiao et al. | Design and high-power test of 800-kW UHF klystron for CEPC | |
| Zhou et al. | Development of a high-gradient X-band RF gun with replaceable field emission cathodes for RF breakdown studies | |
| CN103364701A (en) | A method for measuring the passing rate of an electron beam in a microwave vacuum device | |
| Saraph et al. | A comparative study of three single-stage, depressed-collector designs for a 1-MW, CW gyrotron | |
| Zhang et al. | Electron optics system of a 100-MW S-band klystron | |
| Rui et al. | Electron Gun Thermal Depended Properties’ Analysis of a High-Power ${W} $-Band Sheet Beam Extended Oscillator | |
| Deng et al. | Multiobjective Design Optimization and Experimental Verification of a High-Performance 200-W Ku-Band CW Helix TWT | |
| Zhu et al. | Simulation of a High-convergence Electron Optics System for an X-band High-impedance Relativistic Klystron. | |
| Su et al. | Theoretical analysis and simulated verification of circular beam electron optical system for terahertz vacuum electron devices | |
| Zhang et al. | Full thermal analyses for slow-wave structure in helix-TWT under operation | |
| Li et al. | Efficiency enhancement of helix traveling wave tube based on εMulti-objective evolutionary algorithm | |
| Qu et al. | Development of a C-band 2.5-MW peak power broadband klystron based on high efficiency | |
| CN109494142B (en) | Magnetic insulated wire oscillator with ridge loading blade structure | |
| Wenqiang et al. | Progress of G-band folded waveguide pulsed Traveling Wave Tube | |
| Liu et al. | Application of a newly developed radial directional electron probe to the edge unidirectional electron current measurement in EAST | |
| Fan et al. | Design Method of Focusing Magnetic Field for Restraining Dynamic Defocusing of High Efficiency TWT | |
| Zhang et al. | A 0.34 THz sine waveguide TWT with cylindrical beam tunnel | |
| Wang et al. | Design of a High-Power Edge-Aligned Staggered Double-Vane Traveling-Wave Tube at G-band | |
| Wang et al. | Three-Dimensional-Integrated Electron Optics System With Narrow Beam Separation for Terahertz Vacuum Devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |