CN108268708B - Method and system for acquiring parameter change condition of vacuum electronic device in thermal state - Google Patents

Method and system for acquiring parameter change condition of vacuum electronic device in thermal state Download PDF

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CN108268708B
CN108268708B CN201711498733.2A CN201711498733A CN108268708B CN 108268708 B CN108268708 B CN 108268708B CN 201711498733 A CN201711498733 A CN 201711498733A CN 108268708 B CN108268708 B CN 108268708B
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孙小菡
张劲
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Southeast University
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Abstract

A method and system for accurately determining the variation of vacuum electronic device parameters under thermal conditions. Firstly, establishing a vacuum electronic device model to calculate the wave injection interaction; performing thermal analysis according to heat source parameters obtained by the wave-filling interaction; calculating a thermal deformation parameter according to the temperature distribution obtained by thermal analysis; and correcting the vacuum electronic device model according to the thermal deformation parameters to recalculate the wave injection interaction, thereby obtaining the performance parameters of the vacuum electronic device in a thermal state. According to the invention, parameters of the vacuum electronic device model in a thermal state are corrected through thermal deformation parameters, and finally a synergistic analysis loop of wave injection interaction-thermal deformation-wave injection interaction is formed. By the closed-loop system, the working characteristics of the vacuum electronic device in a working state, particularly in a thermal state can be comprehensively analyzed, and the influence of the thermal state on the performance of the vacuum electronic device can be accurately known.

Description

Method and system for acquiring parameter change condition of vacuum electronic device in thermal state
Technical Field
The invention relates to the field of vacuum electronics, in particular to a method and a system capable of accurately knowing the change condition of device performance parameters in a thermal state.
Background
The traveling wave tube is used as a vacuum electronic device for amplifying high-frequency signals, has the advantages of wide frequency band, high power and the like, and is a core device in radar, communication and electronic countermeasure systems. The traveling wave tube mainly utilizes the interaction of the electron beam and the high-frequency electromagnetic field, and the energy of the electron beam is transferred to the high-frequency electromagnetic field to realize signal amplification and output a signal with certain power.
In engineering application, when vacuum electronic devices such as a traveling wave tube and the like work, the heat state in the tube has important influence on the working performance of the traveling wave tube. Temperature is one of the important factors affecting the reliability and stability of the device: when the temperature in the device is high, a slow wave structure and the like in the device can be subjected to thermal deformation, so that the high-frequency characteristic of the device is influenced, and the working characteristic of the device deviates from a theoretical value.
Experiments aiming at the traveling wave tube prove that the output power of the traveling wave tube is reduced due to overheating of the spiral line at the output end. When the temperature in the tube is too high, a large amount of gas can be released in the tube, so that the traveling wave tube fails. Therefore, the research on the thermal state of vacuum electronic devices such as the traveling wave tube and the like during working has great reference significance for perfecting the design of the traveling wave tube and improving the performance parameters of each component.
Particularly, it is not clear at present whether the thermal state affects the backward wave oscillation condition of the traveling wave tube (whether the thermal state excites the backward wave oscillation, or "contributes" to parameters such as the amplitude of the backward wave oscillation), and further significantly affects the output parameters of the traveling wave tube. It is known that the power of the traveling wave tube at a required operating frequency is reduced by the back wave oscillation, and other oscillations are caused or other signals are modulated, so that other parasitic signals are generated, and the performance of the traveling wave tube is affected. The backward wave oscillation is a main factor for limiting the output power of the traveling wave tube, and the high-frequency characteristic distortion caused by the thermal deformation of the slow wave structure of the traveling wave tube in a thermal state is likely to excite the corresponding backward wave oscillation, so that the output parameters of the traveling wave tube are changed. It is known that the thermal conditions affect the high frequency characteristics of traveling wave tubes. However, how the backward wave oscillation condition of the traveling wave tube in a specific thermal state changes and how the output parameters change due to the backward wave oscillation condition is not determined at present.
Therefore, there is an urgent need for a method for accurately determining the influence of thermal conditions on the performance parameters of vacuum electronic devices. After the influence of the thermal state on the performance parameters of the vacuum electronic device is known, the thermal state can be improved based on the influence, so that the working performance of the vacuum electronic device is improved, and reference is provided for optimizing the design of the vacuum electronic device.
Disclosure of Invention
In order to solve the defects of the prior art, the invention aims to provide a method for calculating the performance parameters of a vacuum electronic device in a thermal state and a system for calculating the performance parameters of the vacuum electronic device in the thermal state.
Firstly, in order to achieve the above object, a method for calculating performance parameters of a vacuum electronic device in a thermal state is provided, which comprises the following steps:
firstly, establishing a vacuum electronic device model, inputting working parameters of the vacuum electronic device, and calculating the wave injection interaction of the vacuum electronic device in a working state to obtain heat source parameters;
secondly, inputting the heat source parameters into the vacuum electronic device model, and carrying out thermal analysis to obtain the temperature distribution of the vacuum electronic device;
thirdly, calculating a thermal deformation parameter according to the temperature distribution of the vacuum electronic device, and correcting the vacuum electronic device model according to the thermal deformation parameter;
and fourthly, according to the vacuum electronic device model corrected in the third step, inputting the working parameters of the vacuum electronic device again, and calculating the wave injection interaction of the vacuum electronic device in a working state to obtain the performance parameters of the vacuum electronic device.
Further, in the above method, the fourth step is followed by a step of recursively correcting the performance parameters of the vacuum electronic device, specifically including the following steps;
and circulating the second step to the fourth step until the difference value between the temperature in the tube and the last calculation result in the temperature distribution of the vacuum electronic device obtained in the second step is smaller than a set threshold value, outputting the performance parameters of the vacuum electronic device obtained by calculation under the temperature distribution, and comparing the performance parameters with the performance parameters under the initial state to obtain the influence of the thermal state on the performance parameters of the vacuum electronic device.
Specifically, in the above method, the operating parameters of the vacuum electronic device include an operating voltage, an electron beam current, an input signal frequency, and an input signal amplitude of the vacuum electronic device.
In the method, the heat source parameters comprise 3D distribution of ohmic loss, 3D distribution of electron bombardment loss and electron injection heat radiation in the vacuum electronic device.
In the specific calculation process, the electron-beam-heating radiation data in the heat source parameters in the method is equivalent to ash body radiation data when the thermal analysis is performed in the second step, and the ash body radiation data is equal to the electron-beam-heating radiation energy.
Specifically, in the above method, the performance parameters of the vacuum electronic device include output power and a back wave oscillation condition, including whether back wave oscillation occurs and an amplitude thereof.
In the above method, the vacuum electronic device includes a traveling wave tube, a klystron, a magnetron, etc.
Secondly, in order to achieve the above object, there is provided a system for calculating performance parameters of a vacuum electronic device in a thermal state, comprising: a vacuum electronics model, a beam-injection interaction analyzer, a thermal analyzer, and a thermal deformation analyzer;
the vacuum electronic device model, the wave injection interaction analyzer, the thermal analyzer and the thermal deformation analyzer are connected in a ring mode to form a closed-loop system; wherein the content of the first and second substances,
the input end of the vacuum electronic device model is connected with the output end of the thermal deformation analyzer and used for correcting the parameters of the vacuum electronic device model according to the thermal deformation parameters output by the thermal deformation analyzer; the output end of the vacuum electronic device model is simultaneously connected with one input end of the wave-injection interaction analyzer, the thermal analyzer and the thermal deformation analyzer and is used for providing parameters for the wave-injection interaction analyzer, the thermal analyzer and the thermal deformation analyzer;
one input end of the wave-injection interaction analyzer is connected with the output end of the vacuum electronic device model, and the other input end of the wave-injection interaction analyzer is used for inputting the working parameters of the vacuum electronic device; the wave-filling interaction analyzer is used for calculating wave-filling interaction of the vacuum electronic device model according to the working parameters, obtaining heat source parameters and performance parameters of the vacuum electronic device model and outputting the heat source parameters and the performance parameters;
one input end of the thermal analyzer is connected with the output end of the vacuum electronic device model, and the other input end of the thermal analyzer is connected with the output end of the wave injection interaction analyzer; the thermal analyzer is used for calculating and outputting temperature distribution data of the vacuum electronic device model according to the heat source parameters output by the wave injection interaction analyzer;
one input end of the thermal deformation analyzer is connected with the output end of the vacuum electronic device model, and the other input end of the thermal deformation analyzer is connected with the output end of the thermal analyzer; and the thermal deformation analyzer is used for calculating and outputting thermal deformation parameters of the vacuum electronic device model according to the temperature distribution data output by the thermal analyzer.
Further, in the above system, the beam-injection interaction analyzer adopts a CST particle studio under a CST (computer Simulation technology) system, or adopts one or more of an MTSS system, a MAGIC system, or an CHRISTINE system;
the thermal analyzer adopts an ANSYS system;
the thermal deformation analyzer employs an ANSYS system.
Based on the technology, the invention also provides a design method of the vacuum electronic device, which is characterized in that a heat dissipation plate is additionally arranged at the high-temperature position in the vacuum electronic device according to the temperature distribution of the vacuum electronic device obtained in the second step;
and replacing the part with high thermal deformation parameter in the vacuum electronic device with the part made of the material with small thermal deformation coefficient according to the thermal deformation parameter obtained in the third step.
Advantageous effects
According to the invention, the thermal deformation parameters are obtained by sequentially carrying out wave injection interaction analysis and thermal analysis on the vacuum electronic device, so that the parameters of the vacuum electronic device model in a thermal state are corrected, and finally a synergistic analysis loop of wave injection interaction-thermal deformation-wave injection interaction is formed. Through the closed-loop system, the invention can comprehensively analyze the working characteristics of the vacuum electronic device in a working state, particularly in a thermal state, and can accurately know the change (including output power, return wave oscillation condition and the like) of the thermal state to the performance parameters of the vacuum electronic device.
Furthermore, when thermal analysis is carried out to calculate thermal deformation, the electronic heat injection radiation in the heat source parameters is equivalent, and the energy generated by the electronic heat injection radiation is analyzed by using an ash body radiation model. The calculation is simplified and the thermal deformation analysis is more accurate.
Meanwhile, the invention can also optimize the traveling wave tube from the aspect of improving the thermal state by knowing the influence of the thermal state on the performance of the traveling wave tube. The parts made of materials with small thermal deformation coefficients are used for replacing parts with high thermal deformation parameters in the vacuum electronic device, and a heat dissipation plate is additionally arranged at a high-temperature position in the vacuum electronic device so as to counteract the influence of a thermal state on the performance parameters of the traveling wave tube. The structure, materials and working parameters of the vacuum electronic device are optimized through the measures, the output power is improved, the return wave oscillation is inhibited, the working reliability is enhanced, and the working performance is improved.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
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The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a flow chart of a method of calculating vacuum electronic device performance parameters under thermal conditions in accordance with the present invention;
FIG. 2 is a block diagram of a system for calculating vacuum electronic device performance parameters under thermal conditions in accordance with the present invention;
FIG. 3 is a schematic structural diagram of a helix traveling wave tube;
FIG. 4 is a 3D distribution diagram of ohmic loss of a helix traveling wave tube in an embodiment of the present invention;
FIG. 5 is a 3D distribution diagram of electron bombardment loss of a helix traveling wave tube in an embodiment of the invention;
FIG. 6 is a 3D distribution diagram of the temperature of the helix traveling wave tube in the embodiment of the present invention;
fig. 7 is a 3D distribution diagram of thermal deformation of the spiral traveling-wave tube in the embodiment of the present invention.
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation. The invention can also be applied to research the influence of the thermal state on the performance of vacuum electronic devices such as klystrons, magnetrons and the like.
FIG. 1 is a flow chart of a method for calculating vacuum electronic device performance parameters under thermal conditions according to the present invention, comprising the steps of: a method for calculating performance parameters of a vacuum electronic device in a thermal state comprises the following steps:
firstly, establishing a vacuum electronic device model, inputting working parameters of the vacuum electronic device, and calculating the wave injection interaction of the vacuum electronic device in a working state to obtain heat source parameters;
secondly, inputting the heat source parameters into the vacuum electronic device model, and carrying out thermal analysis to obtain the temperature distribution of the vacuum electronic device;
thirdly, calculating a thermal deformation parameter according to the temperature distribution of the vacuum electronic device, and correcting the vacuum electronic device model according to the thermal deformation parameter;
and fourthly, according to the vacuum electronic device model corrected in the third step, inputting the working parameters of the vacuum electronic device again, and calculating the wave injection interaction of the vacuum electronic device in a working state to obtain the performance parameters of the vacuum electronic device.
Further, in the above method, the fourth step is followed by a step of recursively correcting the performance parameters of the vacuum electronic device, specifically including the following steps;
and circulating the second step to the fourth step until the difference value between the temperature in the tube and the last calculation result in the temperature distribution of the vacuum electronic device obtained in the second step is smaller than a set threshold value, outputting the performance parameters of the vacuum electronic device obtained by calculation under the temperature distribution, and comparing the performance parameters with the performance parameters under the initial state to obtain the influence of the thermal state on the performance parameters of the vacuum electronic device. The threshold is set to stop when the calculation reaches a certain stable value. If high precision is required, setting the threshold value to be smaller, such as 1 ℃; if the analysis speed needs to be increased and the calculation amount needs to be reduced, the threshold value is increased, for example 10 ℃. The threshold is determined by the required computational accuracy.
Specifically, in the above method, the operating parameters of the vacuum electronic device include an operating voltage, an electron beam current, an input signal frequency, and an input signal amplitude of the vacuum electronic device.
In the method, the heat source parameters comprise 3D distribution of ohmic loss, 3D distribution of electron bombardment loss and electron injection heat radiation in the vacuum electronic device.
In the specific calculation process, the electron-beam-heating radiation data in the heat source parameters in the method is equivalent to ash body radiation data when the thermal analysis is performed in the second step, and the ash body radiation data is equal to the electron-beam-heating radiation energy.
Specifically, in the above method, the performance parameters of the vacuum electronic device include output power and a back wave oscillation condition, including whether back wave oscillation occurs and an amplitude thereof.
In the above method, the vacuum electronic device includes a traveling wave tube, a klystron, a magnetron, etc.
Based on the above method, in the block diagram of the system for calculating the variation condition of the performance parameter of the vacuum electronic device in the thermal state shown in fig. 2, the system provided by the present invention comprises: a vacuum electronic device model, a wave-filling interaction analyzer, a thermal analyzer and a structural stress solver in a multi-physical field (the multi-physical field comprises parameters such as heat, stress, deformation and electricity, and all refer to thermal analysis);
the vacuum electronic device model, the wave injection interaction analyzer, the thermal analyzer and the thermal deformation analyzer are connected in a ring mode to form a closed-loop system; wherein the content of the first and second substances,
the input end of the vacuum electronic device model is connected with the output end of the thermal deformation analyzer and used for correcting the parameters of the vacuum electronic device model according to the thermal deformation parameters output by the thermal deformation analyzer; the output end of the vacuum electronic device model is simultaneously connected with one input end of the wave-injection interaction analyzer, the thermal analyzer and the thermal deformation analyzer and is used for providing parameters for the wave-injection interaction analyzer, the thermal analyzer and the thermal deformation analyzer;
one input end of the wave-injection interaction analyzer is connected with the output end of the vacuum electronic device model, and the other input end of the wave-injection interaction analyzer is used for inputting the working parameters of the vacuum electronic device; the wave-filling interaction analyzer is used for calculating wave-filling interaction of the vacuum electronic device model according to the working parameters, obtaining heat source parameters and performance parameters of the vacuum electronic device model and outputting the heat source parameters and the performance parameters;
one input end of the thermal analyzer is connected with the output end of the vacuum electronic device model, and the other input end of the thermal analyzer is connected with the output end of the wave injection interaction analyzer; the thermal analyzer is used for calculating and outputting temperature distribution data of the vacuum electronic device model according to the heat source parameters output by the wave injection interaction analyzer;
one input end of the thermal deformation analyzer is connected with the output end of the vacuum electronic device model, and the other input end of the thermal deformation analyzer is connected with the output end of the thermal analyzer; and the thermal deformation analyzer is used for calculating and outputting thermal deformation parameters of the vacuum electronic device model according to the temperature distribution data output by the thermal analyzer.
Further, in the above system, the wave-filling interaction analyzer adopts a CST particle studio under a CST system, or adopts one or more of an MTSS system, a MAGIC system, or an CHRISTINE system;
the thermal analyzer adopts an ANSYS system;
the thermal deformation analyzer employs an ANSYS system.
Based on the technology, the invention also provides a design method of the vacuum electronic device, which is characterized in that a heat dissipation plate is additionally arranged at the high-temperature position in the vacuum electronic device according to the temperature distribution of the vacuum electronic device obtained in the second step;
and replacing the part with high thermal deformation parameter in the vacuum electronic device with the part made of the material with small thermal deformation coefficient according to the thermal deformation parameter obtained in the third step.
Specifically, taking a 500W spiral line traveling-wave tube structure of a certain type shown in fig. 3 as an example, the working voltage is 9600V, and the working bandwidth is 10 GHz. The traveling wave tube 1 mainly comprises an electron gun 2, a spiral line 5, a clamping rod 6, a tube shell 7, a periodic permanent magnet focusing structure PPM8, an input window 9, an output window 10 and a collector 11. In the working state of the helix traveling wave tube 1, an electron gun 2 emits an electron beam 3, the electron beam 3 penetrates through a slow wave structure consisting of a helix 5, a clamping rod 6 and a tube shell 7, and the electron beam 3 is kept in a convergence state by a periodic permanent magnet focusing structure (PPM)8 in the process and is finally received by a collector 11; the high-frequency electromagnetic field 4 is input through an input window 9, transmitted in a slow-wave structure consisting of a spiral line 5, a clamping rod 6 and a tube shell 7, and interacted (wave injection interaction) with the advancing electron beam 3, the electron beam 3 transfers energy into the high-frequency electromagnetic field 4, the high-frequency electromagnetic field 4 is amplified, and finally the high-frequency electromagnetic field is output through an output window 10. When the traveling wave tube 1 works, the high-frequency electromagnetic field 4 generates power loss in the transmission process, the loss is distributed on the spiral line 5, the clamping rod 6, the tube shell 7 and the output window 10, and the energy of the lost electromagnetic field is converted into heat energy, which is ohmic loss. In the process of electron beam 3 propagation, a small amount of electrons can bombard the spiral line 3 and other components to generate heat energy, which is electron bombardment loss; at the same time, the electron beam 3 radiates heat, which is also a heat source, and is the electron beam heat radiation.
According to the technical scheme, a vacuum electronic device model is established to calculate the wave injection interaction of the vacuum electronic device model at a certain frequency point, gain of 48dB, output power of 506W and the amplitude of return waves of 0.0126V are obtained (and the amplitude of the return waves is not continuously increased), and meanwhile, heat source parameters including 3D distribution of ohmic loss (shown in figure 4) and 3D distribution of electron bombardment loss (shown in figure 5) are obtained, and the ohmic loss is mainly concentrated on 15-20 turns at the tail end of a spiral line and an inner conductor of an output window, and the peak value of the ohmic loss is 2.3 multiplied by 1010W/m3The electron bombardment loss is concentrated on the 20 turns at the tail end of the spiral line, and the peak value is 1.27 multiplied by 1010W/m3. Then, carrying out thermal analysis according to heat source parameters obtained by the wave injection interaction to obtain temperature 3D distribution (as shown in figure 6), and finding that a high-temperature area is concentrated at the tail end of the spiral line and the conductor in the output window, wherein the highest temperature is 334 ℃ (607K);calculating thermal deformation parameters according to the temperature distribution obtained by thermal analysis to obtain 3D distribution of thermal deformation (as shown in figure 7), and finding that the thermal deformation of the spiral line and the inner conductor of the output window is larger, the thermal deformation of the spiral line is increased along with the increase of the longitudinal distance, and the maximum thermal deformation in the traveling wave tube is 15.7 mu m (0.0157mm) and is positioned on the inner conductor of the output window; and finally, correcting the vacuum electronic device model according to the thermal deformation parameters to recalculate the wave injection interaction, and obtaining the performance parameters of the vacuum electronic device in a thermal state, including the output power and the wave return oscillation state, wherein the wave return amplitude is found to be 0.0518V, which exceeds 4 times that of the vacuum electronic device without considering thermal deformation, and the wave return amplitude is increased along with the time, so that the wave return oscillation is shown, and meanwhile, the output power is reduced to 463W and is reduced by 43W.
In the above calculation process, the temperature of the electron gun at a certain position can be calculated according to the cathode temperature of the electron gun and the divergence condition of the electron beam in the propagation process. The heat radiation power is obtained by theoretical calculation. The electron beam is equivalent to a gray body having a specific emissivity (the radiation energy of which is equivalent to the electron beam emission energy). The heat analyzer is used as a heat radiation source, is in a heat balance state with the spiral line, the clamping rod and the tube shell, and calculates the influence of the heat analyzer on the heat state in the tube
According to the invention, parameters of the vacuum electronic device model in a thermal state are corrected through thermal deformation parameters, so that a synergistic analysis loop of wave injection interaction-thermal deformation-wave injection interaction is formed. By the closed-loop system, the working characteristics of the vacuum electronic device in a working state, particularly in a thermal state can be comprehensively analyzed, and the influence of the thermal state on the performance of the vacuum electronic device can be known.
When the technology of the invention is used for providing reference for the optimization design of the traveling wave tube, the traveling wave tube is taken as an example. As the local high temperature of the traveling wave tube in the working state can cause the return wave oscillation and reduce the output power, the traveling wave tube can be optimized by reducing the temperature in the tube and reducing the thermal deformation in order to improve the performance of the traveling wave tube and restrain the return wave oscillation. For example, a heat dissipation plate with high thermal conductivity can be installed at the tail end of the traveling wave tube to reduce the temperature; the inner conductor of the output window is made of a material with a small thermal expansion coefficient so as to reduce thermal deformation and the like.
Although the present embodiment is described by taking a spiral traveling wave tube as an example, it is obvious to those skilled in the art that the present invention can also be applied to study the influence of the thermal state on the performance of vacuum electronic devices such as klystrons and magnetrons. However, the phenomenon of back wave oscillation does not occur in other devices, so for these devices, the influence of the thermal state of the output power is mainly studied.
Those of ordinary skill in the art will understand that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (9)

1. A method for obtaining the parameter variation condition of a vacuum electronic device in a thermal state is characterized by comprising the following steps:
firstly, establishing a vacuum electronic device model, inputting working parameters of the vacuum electronic device, and calculating the wave injection interaction of the vacuum electronic device in a working state to obtain heat source parameters;
secondly, inputting the heat source parameters into the vacuum electronic device model, and carrying out thermal analysis to obtain the temperature distribution of the vacuum electronic device;
thirdly, calculating a thermal deformation parameter according to the temperature distribution of the vacuum electronic device, and correcting the vacuum electronic device model according to the thermal deformation parameter;
fourthly, according to the vacuum electronic device model corrected in the third step, inputting the working parameters of the vacuum electronic device again, and calculating the wave injection interaction of the vacuum electronic device in a working state to obtain the performance parameters of the vacuum electronic device;
and step five, recursively correcting the performance parameters of the vacuum electronic device according to the following steps:
and circulating the second step to the fourth step until the difference value between the temperature in the tube and the last calculation result in the temperature distribution of the vacuum electronic device obtained in the second step is smaller than a set threshold value, outputting the performance parameters of the vacuum electronic device obtained by calculation under the temperature distribution, and comparing the performance parameters with the performance parameters under the initial state to obtain the influence of the thermal state on the performance parameters of the vacuum electronic device.
2. The method of claim 1, wherein the operating parameters of the vacuum electronic device include operating voltage, electron beam current, input signal frequency, and input signal amplitude of the vacuum electronic device.
3. The method of claim 1, wherein the heat source parameters comprise 3D distribution of ohmic losses, 3D distribution of electron bombardment losses, electron beam injection thermal radiation in the vacuum electronic device.
4. The method of claim 3, wherein the electron-beam thermal radiation data of the heat source parameter is equivalent to the gray body radiation data when the thermal analysis is performed in the second step, and the gray body radiation data is equal to the electron-beam thermal radiation energy.
5. The method of learning vacuum electronic device parameter variations under thermal conditions of claim 1 wherein the vacuum electronic device performance parameters include output power and back wave oscillation conditions.
6. A method of learning the thermal state of a parameter change of a vacuum electronic device as claimed in any one of claims 1 to 5, wherein the vacuum electronic device includes but is not limited to a traveling wave tube, a klystron, a magnetron.
7. A system for acquiring the parameter change condition of a vacuum electronic device in a thermal state is characterized by comprising a vacuum electronic device model, a wave injection interaction analyzer, a thermal analyzer and a thermal deformation analyzer;
the vacuum electronic device model, the wave injection interaction analyzer, the thermal analyzer and the thermal deformation analyzer are connected in a ring mode to form a closed-loop system; wherein the content of the first and second substances,
the input end of the vacuum electronic device model is connected with the output end of the thermal deformation analyzer and used for correcting the parameters of the vacuum electronic device model according to the thermal deformation parameters output by the thermal deformation analyzer; the output end of the vacuum electronic device model is simultaneously connected with one input end of the wave-injection interaction analyzer, the thermal analyzer and the thermal deformation analyzer and is used for providing parameters for the wave-injection interaction analyzer, the thermal analyzer and the thermal deformation analyzer;
one input end of the wave-injection interaction analyzer is connected with the output end of the vacuum electronic device model, and the other input end of the wave-injection interaction analyzer is used for inputting the working parameters of the vacuum electronic device; the wave-filling interaction analyzer is used for calculating wave-filling interaction of the vacuum electronic device model according to the working parameters, obtaining heat source parameters and performance parameters of the vacuum electronic device model and outputting the heat source parameters and the performance parameters;
one input end of the thermal analyzer is connected with the output end of the vacuum electronic device model, and the other input end of the thermal analyzer is connected with the output end of the wave injection interaction analyzer; the thermal analyzer is used for calculating and outputting temperature distribution data of the vacuum electronic device model according to the heat source parameters output by the wave injection interaction analyzer;
one input end of the thermal deformation analyzer is connected with the output end of the vacuum electronic device model, and the other input end of the thermal deformation analyzer is connected with the output end of the thermal analyzer; and the thermal deformation analyzer is used for calculating and outputting thermal deformation parameters of the vacuum electronic device model according to the temperature distribution data output by the thermal analyzer.
8. The system for learning parametric variations in thermal conditions for vacuum electronics as claimed in claim 7 wherein said beam interaction analyzer employs a CST particle studio under CST system, or one or more of MTSS system, MAGIC system or CHRISTINE system;
the thermal analyzer adopts an ANSYS system;
the thermal deformation analyzer employs an ANSYS system.
9. A design method of a vacuum electronic device based on the method of learning parameter variation of a vacuum electronic device in a thermal state as claimed in claim 1, characterized in that a heat-dissipating plate is additionally provided at a high-temperature position in the vacuum electronic device according to the temperature distribution of the vacuum electronic device obtained in the second step;
and replacing the part with high thermal deformation parameter in the vacuum electronic device with the part made of the material with small thermal deformation coefficient according to the thermal deformation parameter obtained in the third step.
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