CN108267869B - Adjustable optical attenuator and device based on different-surface double graphene nanoribbons - Google Patents
Adjustable optical attenuator and device based on different-surface double graphene nanoribbons Download PDFInfo
- Publication number
- CN108267869B CN108267869B CN201711461355.0A CN201711461355A CN108267869B CN 108267869 B CN108267869 B CN 108267869B CN 201711461355 A CN201711461355 A CN 201711461355A CN 108267869 B CN108267869 B CN 108267869B
- Authority
- CN
- China
- Prior art keywords
- graphene
- optical attenuator
- graphene nanoribbon
- silicon dioxide
- dioxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the optical absorption
- G02F1/0156—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the optical absorption using free carrier absorption
Abstract
The invention relates to an adjustable optical attenuator based on a double-graphene nanoribbon with different surfaces, which comprises a doped silicon layer, a first silicon dioxide layer, a second silicon dioxide layer, a first graphene nanoribbon, a second graphene nanoribbon, a first metal electrode and a second metal electrode, wherein the first silicon dioxide layer and the second silicon dioxide layer are respectively arranged on the upper surface and the lower surface of the doped silicon layer, the first graphene nanoribbon is respectively arranged on the upper surface of the first silicon dioxide layer, the second graphene nanoribbon is respectively arranged on the lower surface of the second silicon dioxide layer, and the first metal electrode and the second metal electrode are respectively arranged on the first graphene nanoribbon and the second graphene nanoribbon.
Description
Technical Field
The invention relates to the field of micro-nano photonic devices, in particular to an adjustable optical attenuator and device based on a heterofacial double-graphene nanoribbon.
Background
The adjustable optical attenuator has wide application in the field of optical communication. The optical signal energy dynamic adjustment device can be used for dynamically adjusting the optical signal energy transmitted in the optical communication process, is widely applied to a wavelength division multiplexing optical network system, is used for optical amplifier gain flattening, receiver energy control, light source channel energy control, channel equalization and the like, and is an indispensable key element in an optical network.
Over the last decade, a subsurface attenuator, a surface plasmon-based attenuator has been studied extensively, however, conventional subsurface structures are composed of basic periodic metallic or all-dielectric structures that mostly no longer support plasmon resonance in the mid-infrared or more remote wavelength band and whose optical response cannot be altered once manufactured, failing to achieve tuning operations by external conditions. Currently, most existing adjustable optical attenuators employ a mechanical adjustment method, for example, by setting a light absorbing attenuation sheet with a gradual change of movement, or mechanically controlling the bending degree of an optical fiber. However, the mechanical adjustment mode has high requirements on the precision and stability of the mechanical transmission device, the manufacturing process is complex, the cost is high, and the vibration of the damping sheet during working can cause high instability of system loss and poor repeatability.
The graphene has unique characteristics of harmony, extremely strong local field enhancement, low propagation loss and the like, and can be used for replacing conventional metals to solve the problems.
Disclosure of Invention
The invention provides an adjustable optical attenuator based on a heterofacial double-graphene nanoribbon, which aims to solve the technical defects of complex manufacturing process and high cost of the traditional adjustable optical attenuator in a mechanical adjustment mode and the technical defects of high instability and poor repeatability of system loss caused by vibration in working.
In order to achieve the aim of the invention, the technical scheme adopted is as follows:
the adjustable optical attenuator based on the heterofacial double-graphene nanoribbon comprises a doped silicon layer, a first silicon dioxide layer, a second silicon dioxide layer, a first graphene nanoribbon, a second graphene nanoribbon, a first metal electrode and a second metal electrode, wherein the first silicon dioxide layer and the second silicon dioxide layer are respectively arranged on the upper surface and the lower surface of the doped silicon layer, the first graphene nanoribbon is respectively arranged on the upper surface of the first silicon dioxide layer, the second graphene nanoribbon is arranged on the lower surface of the second silicon dioxide layer, and the first metal electrode and the second metal electrode are respectively arranged on the first graphene nanoribbon and the second graphene nanoribbon.
In the above scheme, under the condition that the light polarization direction is ensured to be perpendicular to the length direction of the first graphene nanoribbon, the excitation light is vertically incident on the upper surface of the first graphene nanoribbon. At this time, excitation light with a certain wavelength can generate local surface plasmons on the first graphene nanoribbon to generate a transmittance depression; and the other wavelength can make the surface plasma of the second graphene nanoribbon generate resonance, so that new transmittance dip is induced. When the grid voltages of the first graphene nanoribbon and the second graphene nanoribbon are changed through the first metal electrode and the second metal electrode, the fermi level of the first graphene nanoribbon and the fermi level of the second graphene nanoribbon are changedE f1 AndE f2 thereby changing the positions of the two transmittance dip. Therefore, after the excitation light with a specific wavelength is selected, the fermi energy levels of the first graphene nanoribbon and the second graphene nanoribbon can be adjusted by changingThe light transmittance of the wavelength is adjusted, thereby adjusting the power of the light.
Preferably, the number of the first graphene nanoribbons arranged on the upper surface of the first silicon dioxide layer is multiple, the multiple first graphene nanoribbons are arranged in parallel, and the interval between any two adjacent first graphene nanoribbons is a fixed value.
Preferably, the number of the second graphene nanoribbons arranged on the upper surface of the second silicon dioxide layer is a plurality of second graphene nanoribbons, the plurality of second graphene nanoribbons are arranged in parallel, and the interval between any two adjacent second graphene nanoribbons is a fixed value; the arrangement direction of the first graphene nanoribbons is perpendicular to the arrangement direction of the second graphene nanoribbons.
Preferably, the width of each first graphene nanoribbon and each second graphene nanoribbon is 150nm, and the length of each first graphene nanoribbon and each second graphene nanoribbon is 300nm.
Preferably, the arrangement direction of the first metal electrode is perpendicular to the arrangement direction of the first graphene nanoribbon; the setting direction of the second metal electrode is perpendicular to the setting direction of the second graphene nanoribbon.
Preferably, the thickness of the first silicon dioxide layer and the second silicon dioxide layer is 40-80 nm.
Preferably, the thickness of the doped silicon layer is 10nm.
Preferably, the first graphene nanoribbon and the second graphene nanoribbon are formed by stacking five layers of graphene materials.
Preferably, the first metal electrode and the second metal electrode are made of gold.
Meanwhile, the invention also provides a device applying the adjustable optical attenuator, which has the following specific scheme:
the device comprises a laser source, a first optical fiber link, an adjustable optical attenuator, a second optical fiber link and an optical power meter, wherein the laser source is connected with the input end of the adjustable optical attenuator through the first optical fiber link, and the output end of the adjustable optical attenuator is connected with the optical power meter through the second optical fiber link.
Compared with the prior art, the invention has the beneficial effects that:
1) The adjustable optical attenuator can work in a far infrared band, and overcomes the defects of the prior art.
2) The adjustable optical attenuator has smaller size, and is convenient for technicians to integrate.
3) The adjustable optical attenuator can adjust the fermi energy levels of the first graphene nanoribbon and the second graphene nanoribbon in a mode of externally applying grid voltage, so that the light transmittance of different wavelengths is adjusted, and therefore the optical attenuator provided by the invention can be flexibly modulated according to different requirements.
4) Excellent performance, and can realize extremely high light attenuation range for light with specific wavelength.
5) The adjustable optical attenuator can not vibrate when in use, so the defects of high loss instability and poor repeatability caused by vibration of the traditional adjustable optical attenuator system can be solved.
5) The adjustable optical attenuator can realize scale production by utilizing an integrated manufacturing process, and the production cost is reduced.
Drawings
Fig. 1 is a schematic diagram of a structure of a tunable optical attenuator.
Fig. 2 is a schematic diagram of the structure of the device.
Fig. 3 is a wavelength-transmittance plot of a tunable optical attenuator.
Fig. 4 is a fermi level-loss diagram of a tunable optical attenuator.
Detailed Description
The drawings are for illustrative purposes only and are not to be construed as limiting the present patent;
the invention is further illustrated in the following figures and examples.
Example 1
The present embodiment provides a tunable optical attenuator 1, as shown in fig. 1, which includes a doped silicon layer 5, a first silicon dioxide layer 4, a second silicon dioxide layer 6, a plurality of first graphene nanoribbons 3, a plurality of second graphene nanoribbons 8, a first metal electrode 2, and a second metal electrode 7.
Wherein the thickness of the doped silicon layer 5 is 10nm; the thickness of the first silicon dioxide layer 4 and the second silicon dioxide layer 6 is 40-80 nm; the first graphene nanoribbon 3 and the second graphene nanoribbon 8 are formed by stacking five layers of graphene materials, wherein the width of the first graphene nanoribbon 3 and the second graphene nanoribbon 8 is 150nm, and the length of the first graphene nanoribbon is 300 nm; the first metal electrode 2 and the second metal electrode 7 are made of gold.
The first silicon dioxide layer 4 and the second silicon dioxide layer 6 are respectively arranged on the upper surface and the lower surface of the doped silicon layer 5, the lower surface of the first silicon dioxide layer 4 is clung to the upper surface of the doped silicon layer 5, and the upper surface of the second silicon dioxide layer 6 is clung to the lower surface of the doped silicon layer 5. The plurality of first graphene nanoribbons 3 are arranged on the upper surface of the first silicon dioxide layer 4, the plurality of first graphene nanoribbons 3 are arranged in parallel, and the interval between any two adjacent first graphene nanoribbons 3 is a fixed value. The plurality of second graphene nanoribbons 8 are arranged on the lower surface of the second silicon dioxide layer 6, the plurality of second graphene nanoribbons 8 are arranged in parallel, the distance between any two adjacent second graphene nanoribbons 8 is a fixed value, and the arrangement direction of the plurality of first graphene nanoribbons 3 is perpendicular to the arrangement direction of the plurality of second graphene nanoribbons 8. The first metal electrode 2 and the second metal electrode 7 are respectively arranged on the first graphene nanoribbon 3 and the second graphene nanoribbon 8, the arrangement direction of the first metal electrode 2 is perpendicular to the arrangement direction of the first graphene nanoribbon 3, and the arrangement direction of the second metal electrode 7 is perpendicular to the arrangement direction of the second graphene nanoribbon 8.
In the above scheme, under the condition of ensuring that the light polarization direction is perpendicular to the length direction of the first graphene nanoribbon 3, the excitation light is vertically incident on the upper surface of the first graphene nanoribbon 3. At this time, excitation light with a certain wavelength can generate local surface plasmons on the first graphene nanoribbon 3 to generate a transmittance depression; and the other wavelength resonates the surface plasmon of the second graphene nanoribbon 8, thereby inducing a new transmittance dip. When the gate voltages 9, 1 of the first graphene nanoribbon 3, the second graphene nanoribbon 8 are changed by the first metal electrode 2 and the second metal electrode 70, the fermi level of the first graphene nanoribbon 3 and the second graphene nanoribbon 8 is changedE f1 AndE f2 thereby changing the positions of the two transmittance dip. Therefore, after the excitation light with a specific wavelength is selected, the fermi energy levels of the first graphene nanoribbon 3 and the second graphene nanoribbon 8 can be changed to adjust the light transmittance of the wavelength, so as to adjust the power of the light.
The first graphene nanoribbon 3 and the second graphene nanoribbon 8 of the adjustable optical attenuator 1 provided by the invention have fermi energy levelsE f1 AndE f2 the adjustable range is 0.2eV-0.8eV by means of externally applied grid voltage, and the working wavelength of the optical attenuator 1 is 5.33 mu m. As shown in fig. 3, can be achieved by different meansE f1 AndE f2 and the transmission patterns with different bandwidths and recess wavelengths are conveniently obtained by combining the transmission patterns to obtain different transmission recesses.
In this embodiment, as shown in FIG. 4, the operating wavelength of the optical attenuator 1 is 5.33 μm, and the Fermi level of the optical attenuator 1 is adjusted at the same timeE f1 AndE f2 the loss of the optical attenuator 1 is increased from 0.37dB to 15.56dB from 0.45eV to 0.53eV, and the attenuation range is between 15dB. The light source has excellent performance, and can realize extremely high light attenuation range for light with specific wavelength.
Example 2
This embodiment provides an apparatus applying the scheme of embodiment 1, as shown in fig. 2, which includes a laser source 11, a first optical fiber link 12, an adjustable optical attenuator 1, a second optical fiber link 13, and an optical power meter 14, wherein the laser source 11 is connected to an input end of the adjustable optical attenuator 1 through the first optical fiber link 12, and an output end of the adjustable optical attenuator 1 is connected to the optical power meter 14 through the second optical fiber link 13. Wherein the laser source 11 is used for emitting excitation light, i.e. light to be detected, the wavelength of which is located in the far infrared band, and the optical power meter 14 is used for measuring the magnitude of the transmitted light power.
In the above scheme, under the condition of ensuring that the light polarization direction is perpendicular to the length direction of the first graphene nanoribbon 3, the method enablesExcitation light emitted by the laser source 11 is perpendicularly incident on the upper surface of the first graphene nanoribbon 3 through the first optical fiber link 12. At this time, excitation light with a certain wavelength can generate local surface plasmons on the first graphene nanoribbon 3 to generate a transmittance depression; and the other wavelength resonates the surface plasmon of the second graphene nanoribbon 8, thereby inducing a new transmittance dip. When the gate voltages 9, 10 of the first graphene nanoribbon 3, the second graphene nanoribbon 8 are changed by the first metal electrode 2 and the second metal electrode 7, the fermi level of the first graphene nanoribbon 3, the second graphene nanoribbon 8 is changedE f1 AndE f2 thereby changing the positions of the two transmittance dip. Therefore, after the excitation light with a specific wavelength is selected, the fermi energy levels of the first graphene nanoribbon 3 and the second graphene nanoribbon 8 can be changed to adjust the light transmittance of the wavelength, so as to adjust the power of the light, and at this time, the transmitted light is transmitted to the optical power meter 14 through the second optical fiber link 13 for measurement.
It is to be understood that the above examples of the present invention are provided by way of illustration only and not by way of limitation of the embodiments of the present invention. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the invention are desired to be protected by the following claims.
Claims (8)
1. Adjustable optical attenuator based on two graphite alkene nanobelts of different face, its characterized in that: the device comprises a doped silicon layer, a first silicon dioxide layer, a second silicon dioxide layer, a first graphene nanoribbon, a second graphene nanoribbon, a first metal electrode and a second metal electrode, wherein the first silicon dioxide layer and the second silicon dioxide layer are respectively arranged on the upper surface and the lower surface of the doped silicon layer;
the number of the first graphene nanobelts arranged on the upper surface of the first silicon dioxide layer is a plurality, the first graphene nanobelts are arranged in parallel, and the interval between any two adjacent first graphene nanobelts is a fixed value;
the number of the second graphene nanoribbons arranged on the upper surface of the second silicon dioxide layer is multiple, the second graphene nanoribbons are arranged in parallel, and the interval between any two adjacent second graphene nanoribbons is a fixed value; the arrangement direction of the first graphene nanoribbons is perpendicular to the arrangement direction of the second graphene nanoribbons.
2. The variable optical attenuator based on heteroplanar dual graphene nanoribbons of claim 1, wherein: the width of each first graphene nanoribbon and each second graphene nanoribbon is 150nm, and the length of each first graphene nanoribbon and each second graphene nanoribbon is 300nm.
3. The variable optical attenuator based on heteroplanar dual graphene nanoribbons of claim 1, wherein: the arrangement direction of the first metal electrode is perpendicular to the arrangement direction of the first graphene nanoribbon; the setting direction of the second metal electrode is perpendicular to the setting direction of the second graphene nanoribbon.
4. The variable optical attenuator based on the heterofacial double graphene nanoribbons according to any one of claims 1-3, wherein the variable optical attenuator is characterized in that: the thickness of the first silicon dioxide layer and the second silicon dioxide layer is 40-80 nm.
5. The variable optical attenuator based on the heterofacial double graphene nanoribbons according to any one of claims 1-3, wherein the variable optical attenuator is characterized in that: the thickness of the doped silicon layer is 10nm.
6. The variable optical attenuator based on the heterofacial double graphene nanoribbons according to any one of claims 1-3, wherein the variable optical attenuator is characterized in that: the first graphene nanoribbon and the second graphene nanoribbon are formed by stacking five layers of graphene materials.
7. The variable optical attenuator based on the heterofacial double graphene nanoribbons according to any one of claims 1-3, wherein the variable optical attenuator is characterized in that: the first metal electrode and the second metal electrode are made of gold.
8. An apparatus for applying the adjustable optical attenuator of any one of claims 1 to 7, wherein: the device comprises a laser source, a first optical fiber link, an adjustable optical attenuator, a second optical fiber link and an optical power meter, wherein the laser source is connected with the input end of the adjustable optical attenuator through the first optical fiber link, and the output end of the adjustable optical attenuator is connected with the optical power meter through the second optical fiber link.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711461355.0A CN108267869B (en) | 2017-12-28 | 2017-12-28 | Adjustable optical attenuator and device based on different-surface double graphene nanoribbons |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711461355.0A CN108267869B (en) | 2017-12-28 | 2017-12-28 | Adjustable optical attenuator and device based on different-surface double graphene nanoribbons |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108267869A CN108267869A (en) | 2018-07-10 |
| CN108267869B true CN108267869B (en) | 2023-05-26 |
Family
ID=62772665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711461355.0A Active CN108267869B (en) | 2017-12-28 | 2017-12-28 | Adjustable optical attenuator and device based on different-surface double graphene nanoribbons |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108267869B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110867635A (en) * | 2019-12-18 | 2020-03-06 | 东南大学 | Dynamic adjustable graphene attenuator based on equivalent surface plasmons |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103984125A (en) * | 2014-05-23 | 2014-08-13 | 西北大学 | Grapheme based electronically controlled terahertz attenuation piece, preparation method and utilization method |
| CN106547121A (en) * | 2017-01-19 | 2017-03-29 | 中南林业科技大学 | A kind of light polarization transducer based on Graphene |
| CN107196028A (en) * | 2017-07-13 | 2017-09-22 | 东南大学 | A kind of dynamic adjustable attenuator of the substrate integration wave-guide based on graphene |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015138694A2 (en) * | 2014-03-14 | 2015-09-17 | Board Of Trustees Of Michigan State University | Variable optical attenuator with integrated control based on strongly correlated materials |
-
2017
- 2017-12-28 CN CN201711461355.0A patent/CN108267869B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103984125A (en) * | 2014-05-23 | 2014-08-13 | 西北大学 | Grapheme based electronically controlled terahertz attenuation piece, preparation method and utilization method |
| CN106547121A (en) * | 2017-01-19 | 2017-03-29 | 中南林业科技大学 | A kind of light polarization transducer based on Graphene |
| CN107196028A (en) * | 2017-07-13 | 2017-09-22 | 东南大学 | A kind of dynamic adjustable attenuator of the substrate integration wave-guide based on graphene |
Non-Patent Citations (1)
| Title |
|---|
| 光纤型热光可调光衰减器的设计及其衰减分析;黄旭光 等;《光子学报》;第26卷(第12期);第1787-1790页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108267869A (en) | 2018-07-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Gauthier et al. | Slow light: from basics to future prospects | |
| CN103926654A (en) | Athermal arrayed waveguide grating wavelength division multiplexer | |
| CN108267869B (en) | Adjustable optical attenuator and device based on different-surface double graphene nanoribbons | |
| CN109901262B (en) | Graphene-coated side polishing and grinding dual-core photonic crystal fiber polarization converter | |
| Zi et al. | Photonic crystal fiber polarization filter based on surface plasmon polaritons | |
| CN110412682A (en) | The high double-refraction photon crystal fiber filled based on gold nano-material and the Polarization filter using the optical fiber | |
| CN107357111B (en) | Dynamic control photonic crystal slow light implementation method | |
| CN107422406A (en) | A kind of uni-directional light flow device and design method based on double dirac points | |
| US6337753B1 (en) | Optical power equalizer | |
| CN102103229A (en) | Array waveguide grating insensitive to temperature and polarization | |
| CN207676069U (en) | Adjustable optical attenuator and device based on the double graphene nanobelts of antarafacial | |
| CN102853953A (en) | Micro-tension sensing device based on micro-optical fiber Bragg grating and preparation method thereof | |
| CN105204120A (en) | Novel adjustable optical fiber attenuator | |
| CN109765701B (en) | Dynamic adjustable attenuator | |
| CN109188599A (en) | A kind of dual-trench type big negative dispersion waveguide in 1530nm to 1580nm wavelength band | |
| CN109273805B (en) | Adjustable filter based on graphene | |
| CN104155719A (en) | Structure for dynamically adjusting chirp value of silicon-based waveguide grating | |
| CN113448135A (en) | Graphene-based high-linearity micro-ring auxiliary MZ modulator | |
| US20050008288A1 (en) | Fiber optical gain equalizer | |
| CN107918170B (en) | Photonic crystal slow light waveguide device and slow light effect obtaining method | |
| CN108526711B (en) | Method for improving nanosecond pulse width ultraviolet laser cutting | |
| CN112596150A (en) | Novel ultra-wideband dual-core photonic crystal fiber | |
| CN101029951A (en) | Dynamic-tuning dispersion compensator | |
| EP2820457B1 (en) | Highly nonlinear optical fiber with improved sbs threshold and moderate attenuation | |
| CN116449486A (en) | Large-mode-field double-channel polarization inhibition optical fiber |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |