CN113448135A - Graphene-based high-linearity micro-ring auxiliary MZ modulator - Google Patents
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 96
- 238000010168 coupling process Methods 0.000 claims abstract description 97
- 230000008878 coupling Effects 0.000 claims abstract description 95
- 238000005859 coupling reaction Methods 0.000 claims abstract description 95
- 239000000126 substance Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 9
- 230000008569 process Effects 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
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- 238000002955 isolation Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000009022 nonlinear effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/212—Mach-Zehnder type
Abstract
The invention discloses a graphene-based high-linearity micro-ring auxiliary MZ modulator which comprises a micro-ring waveguide structure, a phase modulation structure, a signal modulation structure, a modulation coupling structure and an MZ modulator integrated with an adjustable beam splitter. A phase modulation structure and a signal modulation structure are integrated on the micro-ring waveguide structure, and a modulation arm of the MZ modulator is integrated with a modulation coupling structure. The modulation coupling structure and the micro-ring waveguide structure keep the same curvature and are coupled at a fixed interval. The phase modulation structure, the modulation coupling structure and the adjustable beam splitter wrap the graphene layer, and the modulation process of the micro-ring auxiliary MZ modulator is regulated and controlled by changing the chemical potential of the graphene layer, so that the required high linearity and high extinction ratio requirements are met, the working wavelength of the modulator is tunable, and the modulator has important application value for linear integrated optoelectronic devices.
Description
Technical Field
The invention relates to the technical field of photoelectrons, in particular to a graphene-based high-linearity micro-ring auxiliary MZ modulator and a using method thereof.
Background
The electro-optical modulator is a core component of radio over fiber (RoF) technology, and the quality of linearity directly affects the signal transmission, processing and Spurious Free Dynamic Range (SFDR) of the system. For an electro-optical modulator, the currently predominant modulation method is external modulation, but this introduces nonlinear effects and generates nonlinear distortion in the link. In practical applications, as the requirement for distortion-free transmission and processing of analog signals is increased, the linear modulation of the RoF technology is also emphasized more and more. Therefore, the improvement of the linearity of the electro-optical modulator and the suppression of the generation of the nonlinear effect in the modulator are important technical points for ensuring high-fidelity transmission of microwave signals and improving the RoF performance. The current mature optical domain linearization method comprises the following steps: an optical domain feedforward compensation technology, an optical domain dual-polarization control technology, an optical domain post-compensation technology, a micro-ring auxiliary technology and the like. The micro-ring auxiliary technology is to integrate a super-linear micro-ring resonator on a Mach-Zehnder (MZ) modulator to form a micro-ring auxiliary MZ modulator (MRAMZM), and to perform linear compensation on an optical path through the micro-ring resonator, and the micro-ring auxiliary technology is a high-linearity implementation scheme which is widely received and used.
The method mainly utilizes the super-linearity of the micro-ring to form complementation with the cosine nonlinear characteristic of the MZ modulator. For a lossless model, the high linearity requirement of the MRAMZM can be met by regulating and controlling the direct current bias of the MZM to be a linear bias point and then regulating and controlling the coupling coefficient of the micro-ring and the MZM modulator to be 0.928. However, most of these approaches are directed to a single operating wavelength, which is not well suited for wavelength division multiplexing systems. In addition, in practice, the micro-ring loss of the model cannot be ignored, so that the fixed coupling structure can not meet the requirement of high linearity any more. It is therefore necessary to find a solution for improving the linearity of the mramz at multiple wavelengths.
Disclosure of Invention
The invention aims to: aiming at the technical problems that the micro-ring coupling efficiency cannot be regulated and controlled at high precision and the micro-ring working wavelength is limited and cannot be tuned in the prior art, the invention provides a graphene-based high-linearity micro-ring auxiliary MZ modulator. The invention provides a novel micro-ring coupling modulation structure, and a micro-ring modulator based on the structure can finely adjust the coupling efficiency of a micro-ring and an MZM modulation arm, so that the micro-ring and the MZM modulation arm reach a certain specific value which is wanted by people, and the micro-ring modulator has higher precision, thereby meeting the requirement of high linearity of devices. And the working wavelength of the device can be tuned, and the device has important application value for a linear integrated device.
The technical scheme adopted by the invention is as follows:
a graphene-based high-linearity micro-ring auxiliary MZ modulator specifically comprises a micro-ring waveguide structure, a signal modulation structure, a phase modulation structure, a modulation coupling structure and an MZ modulator comprising an adjustable beam splitter, wherein the whole device is arranged on a substrate.
Further, the micro-ring waveguide structure comprises a silicon waveguide micro-ring, and the signal modulation structure and the phase modulation structure are partially integrated on the micro-ring. The lower part is fixed with a certain distance with the parallelly attached MZM modulation arm.
Furthermore, graphene layers are respectively wrapped in the signal modulation structure, the phase modulation structure and the modulation coupling structure, the graphene layers are isolated from the waveguide material by an isolation medium with a certain thickness, and the graphene layers respectively extend to one side far away from the micro-ring waveguide structure and are respectively connected with corresponding electrodes.
Specifically, the graphene is a honeycomb-shaped two-dimensional hexagonal carbon structure material and is a novel material, the chemical potential and the conductivity of the graphene can be changed accordingly under the action of an external voltage, so that the refractive index and the absorption rate of the graphene are changed, meanwhile, the graphene has a zero band gap structure, the graphene can play a role in a very wide optical wavelength range, a graphene layer is horizontally laid in a traditional SOI waveguide, a bias voltage is applied to the graphene layer, the complex refractive index of the graphene is changed, and the absorption intensity of incident light can be changed to achieve phase or amplitude modulation of the incident light.
Preferably, the micro-ring waveguide structure adopts a strip waveguide with the size of 400X220nm, and the waveguide material is silicon.
Preferably, the material of the substrate is silicon dioxide.
Preferably, the isolation medium is made of hexagonal boron nitride (hBN), and the thickness of the isolation medium between the graphene and the waveguide material is 5 nm.
Preferably, all of the waveguide structures are single mode waveguides, support only single mode transmission in a selected wavelength range, and modulate the TM0 mode. The coupling length of the coupling modulation region is 10 micrometers, the coupling distance is 100nm, the radius of the micro-ring waveguide structure is 20 micrometers, and the lengths of the signal modulation structure and the phase modulation structure are both 4 micrometers.
A use method of a graphene-based high-linearity micro-ring auxiliary MZ modulator comprises a working wavelength tuning step, a graphene fine-tuning coupling efficiency step and an MZM splitting ratio adjusting step, and specifically comprises the following steps:
tuning the operating wavelength comprises the steps of:
1) inputting an optical signal to a micro-ring coupling modulation structure;
2) adjusting the bias voltage applied to the graphene layer in the phase modulation structure to enable the graphene layer to be in different chemical potentials, and performing phase modulation on the input optical signal to enable the resonant wavelength of the optical signal in the micro-ring waveguide structure to change along with the applied bias voltage;
3) and determining the position of the optical signal far away from the resonance wavelength in the micro-ring waveguide structure under each chemical potential, namely the corresponding working wavelength is tunable along with the bias.
The graphene fine-tuning coupling efficiency comprises the following steps:
1) inputting an optical signal with the structural working wavelength into the micro-ring waveguide structure;
2) and adjusting the bias voltage of the graphene layer in the modulation coupling structure to enable the graphene to be in different chemical potentials, changing the optical signal coupling environment of the modulation coupling structure, further changing the coupling efficiency, and adjusting the bias voltage to enable the coupling efficiency to reach the target coupling efficiency.
The MZM adjustment splitting ratio comprises the following steps:
1) determining the modulation arm loss corresponding to the working wavelength and the required splitting ratio of the MZ modulator by tuning the working wavelength and the coupling efficiency;
2) according to the difference of loss of an upper arm and a lower arm of the MZ modulation, the bias voltage of a graphene layer in the adjustable beam splitter of the MZ modulator is adjusted to enable graphene to be in different chemical potentials, the light coupling process in the adjustable beam splitter is changed, and the splitting ratio of the beam splitter reaches a preset value.
Specifically, according to coupling theory analysis, by introducing a graphene structure into a micro-ring coupling region, the structure size can be designed in advance under the condition that basic bias voltage is added to graphene, the coupling efficiency is regulated to be close to a value required by people, and then the coupling environment is finely adjusted by changing the mode of bias voltage added to graphene, so that high-precision regulation and control of the coupling efficiency are realized. And finally, the splitting ratio corresponding to the working wavelength is realized by changing the splitting ratio of an adjustable beam splitter in the MZ modulator, so that the device achieves a higher extinction ratio, and the performance of the modulator is improved.
Compared with the prior art, the invention has the beneficial effects that:
(1) the technical scheme of the invention provides a novel micro-ring coupling modulation structure, a micro-ring modulator based on the structure can finely adjust the coupling efficiency between a micro-ring and a modulation arm to achieve a certain specific value which is required by people, has higher precision, and plays a role in an application scene needing to accurately control the coupling efficiency, and the working wavelength of the structure can be tuned, the structure has important application value for a linear integrated photonic device, and the correctness of the result is verified through simulation;
(2) the invention is based on the principle that graphene can modulate the phase and the intensity of an optical field, can realize the tunability of working wavelength without changing the structure of a device, utilizes the graphene structure to finely tune the coupling environment of a coupling structure, realizes the adjustment of the coupling efficiency, is irrelevant to the radius of a micro-ring, is suitable for the micro-ring with any radius, and is beneficial to the manufacture of the device because the requirements on process tolerance are reduced due to the fine tuning.
Drawings
Fig. 1 is a schematic diagram (a) of a three-dimensional structure of a graphene-based high-linearity micro-ring auxiliary MZ modulator, schematic diagrams (b, c) of wrapping graphene by a phase modulation structure and a coupling modulation structure, and a schematic diagram (d) of wrapping graphene by an adjustable beam splitter;
FIG. 2 is a diagram of a microring coupling resonance condition of a phase modulation structure 2 in a graphene-based high linearity microring auxiliary MZ modulator at incident light wavelengths of 1.54 μm to 1.56 μm when the modulation structure is respectively at chemical potentials of 0.2eV, 0.4eV, 0.6eV and 0.8 eV;
fig. 3 is a graph showing the change of the operating wavelength of the micro-ring and the single-cycle loss of the micro-ring of the graphene-based high-linearity micro-ring auxiliary MZ modulator under different graphene chemical potentials with different phase modulation structures 2;
FIG. 4 shows the coupling efficiency required by the graphene-based high-linearity micro-ring auxiliary MZ modulator to maintain the high linearity of the device under different operating wavelengths;
FIG. 5 is a graph showing a relationship between coupling efficiency of a modulation coupling structure 3 and chemical potential of graphene 11 in a coupling region, wherein the coupling length is determined to be 10 μm when the operating wavelength of the graphene-based high-linearity micro-ring auxiliary MZ modulator is 1.5468 μm and the coupling spacing is 100 nm;
FIG. 6 shows the spurious-free dynamic range of a graphene-based high-linearity micro-ring auxiliary MZ modulator when the working wavelength is 1.5468 μm, the coupling spacing is 100nm, and the device is in a high-linearity state;
FIG. 7 is a graph showing the relationship between the splitting ratio of the adjustable beam splitter and the change of the chemical potential of graphene in the beam splitter when the working wavelength of the graphene-based high-linearity micro-ring auxiliary MZ modulator is 1.5468 μm and the coupling spacing is 100nm and the device is in a high-linearity state;
FIG. 8 is a graph showing a relationship between the coupling efficiency of the modulation coupling structure 3 and the chemical potential of the graphene 11 in the coupling region, wherein the coupling length is determined to be 10 μm when the operating wavelength of the graphene-based high-linearity micro-ring auxiliary MZ modulator is 1.5516 μm and the coupling spacing is 100 nm;
FIG. 9 shows the spurious-free dynamic range of a graphene-based high-linearity micro-ring auxiliary MZ modulator with an operating wavelength of 1.5516 μm and a coupling spacing of 100nm when the device operates in a high-linearity state;
FIG. 10 is a graph showing the relationship between the splitting ratio of the adjustable beam splitter and the change of the chemical potential of graphene in the beam splitter when the operating wavelength of the graphene-based high-linearity micro-ring auxiliary MZ modulator is 1.5516 μm and the coupling spacing is 100nm in a high-linearity state of the device;
labeled as: the phase-locked loop based on the graphene-based photonic crystal structure comprises a 1-phase modulation structure, a 2-signal modulation structure, a 3-modulation coupling structure, a 4-adjustable beam splitter, a 5-integrated micro-ring, a 6-MZ modulator, a 7-substrate, an 8-direct current bias, electrodes 9, 10, 11 and 12, isolation layers 13, 14 and 15, and graphene 18 and 16.
Detailed Description
The present invention will be described in further detail in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention.
As shown in fig. 1, a graphene-based high-linearity micro-ring auxiliary MZ modulator specifically includes a micro-ring waveguide structure 5, a phase modulation structure 1, a signal modulation structure 2, a modulation coupling structure 3, and an MZ modulator 6 including an adjustable beam splitter, and the entire micro-ring coupling modulation structure is fixed on a substrate 7.
The micro-ring waveguide structure 5 integrates the phase modulation structure 1 and the signal modulation structure 2, and maintains a fixed distance with the modulation coupling structure 3 with the same curvature.
The phase modulation structure 1 wraps the graphene layer 16, the modulation coupling structure 3 wraps the graphene layer 17, and the adjustable beam splitter 4 wraps the graphene layer 18. The graphene layers 16, 17 and 18 are separated from the waveguide material and the cladding material by a thickness of separation medium 13, 14 and 15, and the graphene layers 16, 17 and 18 extend away from the waveguide and are connected to the electrodes 9, 10 and 11 respectively. The signal modulating structure 2 and the dc bias 8 apply an electrical signal and a bias voltage via the electrodes.
The waveguide in the structure adopts a strip waveguide, the size of the waveguide is 400X220nm, the waveguide material is silicon, the material of the substrate 7 is silicon dioxide, the material for realizing the modulation function is graphene, the isolation medium between the graphene layers 16, 17 and 18 and the waveguide material is hexagonal boron nitride (hBN), all waveguide structures in the structure are single-mode waveguides, only support single-mode transmission in the selected wavelength range, and modulate aiming at a TM0 mode. The radius of the micro-ring waveguide is 20 micrometers, the coupling length of the coupling modulation region is 10 micrometers, the coupling distance is 100nm, the lengths of the phase modulation structure 1 and the signal modulation structure 2 are both 4 micrometers, and an isolation medium 6 with the thickness of 5nm is arranged between the graphene and the waveguide material.
A use method of a graphene-based high-linearity micro-ring auxiliary MZ modulator comprises a working wavelength tuning step and a graphene fine-tuning coupling efficiency step, and specifically comprises the following steps:
tuning the operating wavelength comprises the steps of:
1) inputting an optical signal to a micro-ring coupling modulation structure;
2) adjusting the bias voltage applied to the graphene layer in the phase modulation structure to enable the graphene layer to be in different chemical potentials, and performing phase modulation on the input optical signal to enable the resonant wavelength of the optical signal in the micro-ring waveguide structure to change along with the applied bias voltage;
3) and determining the position of the optical signal far away from the resonance wavelength in the micro-ring waveguide structure under each chemical potential, namely the corresponding working wavelength is tunable along with the bias.
The graphene fine-tuning coupling efficiency comprises the following steps:
1) inputting an optical signal with the structural working wavelength into the micro-ring waveguide structure;
2) and adjusting the bias voltage of the graphene layer in the modulation coupling structure to enable the graphene to be in different chemical potentials, changing the optical signal coupling environment of the modulation coupling structure, further changing the coupling efficiency, and adjusting the bias voltage to enable the coupling efficiency to reach the target coupling efficiency.
The MZM adjustment splitting ratio comprises the following steps:
1) determining the modulation arm loss corresponding to the working wavelength and the required splitting ratio of the MZ modulator by tuning the working wavelength and the coupling efficiency;
2) according to the difference of loss of an upper arm and a lower arm of the MZ modulation, the bias voltage of a graphene layer in the adjustable beam splitter of the MZ modulator is adjusted to enable graphene to be in different chemical potentials, the light coupling process in the adjustable beam splitter is changed, and the splitting ratio of the beam splitter reaches a preset value.
According to the coupling theory analysis, by introducing a graphene structure into a micro-ring coupling area, the structure size can be designed in advance under the condition that basic bias voltage is added to graphene, the coupling efficiency is regulated to be close to a value required by people, and then the coupling environment is finely adjusted by changing the mode of bias voltage applied to the graphene, so that the high-precision regulation and control of the coupling efficiency are realized.
Different bias voltages are added to the graphene 16 in the phase modulation structure 1, so that the graphene 16 is at different chemical potentials, and further the resonance characteristics of the micro-ring are changed, as shown in fig. 2. According to the resonance characteristics, the position of the optical signal far away from the resonance wavelength in the micro-ring waveguide structure under each chemical potential is determined, that is, the corresponding working wavelength and the micro-ring single-cycle loss can be tuned along with the bias voltage, as shown in fig. 3. And further adjusting the bias voltage of the graphene 17 in the modulation coupling structure 3 to realize high-precision regulation and control on the coupling efficiency. According to the high linearity implementation of the mramz, the optimal decoupling efficiency required at different wavelengths and corresponding microring single cycle losses is determined as shown in fig. 4.
Example 1
When the graphene 16 on the phase modulation structure 1 is selected to be 0.7eV, the corresponding device working wavelength is 1.5468 μm, the corresponding micro-ring single-cycle loss is 0.942, and the optimal decoupling efficiency required to meet the requirement of high linearity is 0.913.
FIG. 5 shows the variation of the coupling efficiency of the modulation coupling structure 3 with the chemical potential of the graphene 17 when the operating wavelength is 1.5468 μm, the coupling distance is 100nm, and the coupling length is 10 μm. It can be seen from the figure that when the graphene 17 in the modulation coupling structure 3 is at 0.72eV, the coupling efficiency can be regulated to accurately reach the target value (0.913). The device then meets the requirement of high linearity at an operating wavelength of 1.5468 μm.
FIG. 6 is a parameter SFDR characterizing the linearity of the device when the operating wavelength is 1.548 μm and the requirement of high linearity is satisfied. It can be seen that the SFDR of the device reaches 112.7dB Hz2/3Compared with the 97dB Hz of the common MZ modulator2/3The improvement is 15 dB.
The introduction of the microring causes a difference in loss between the modulation arm and the reference arm of the MZ modulator, in order to keep the upper and lower arms close to 1: 1, and further improving the extinction ratio of the device, wherein the splitting ratio of the adjustable beam splitter needs to be adjusted to be 0.55: 0.45. fig. 7 is a graph of the normalized output intensity of the coupling arm of the tunable beam splitter 4 as a function of the chemical potential of the graphene 18 on the beam splitter 4. It can be seen that when the chemical potential of the graphene 18 is selected to be 0.65eV, the splitting ratio of the tunable beam splitter 4 reaches a desired value.
Example 2
When the graphene 16 on the phase modulation structure 1 is selected to be 0.47eV, the working wavelength of the corresponding device is 1.5516 μm, the single-cycle loss of the corresponding micro-ring is 0.804, and the optimal decoupling efficiency required to meet the requirement of high linearity is 0.882.
FIG. 8 shows the variation of the coupling efficiency of the modulation coupling structure 3 with the chemical potential of the graphene 17 when the operating wavelength is 1.5516 μm, the coupling distance is 100nm, and the coupling length is 10 μm. It can be seen from the figure that when the graphene 17 in the modulation coupling structure 3 is at 0.41eV, the coupling efficiency can be regulated to accurately reach a target value (0.882). The device then meets the requirement of high linearity at an operating wavelength of 1.5516 μm.
FIG. 9 is a parameter SFDR for characterizing the linearity of a device when the device satisfies the requirement of high linearity at an operating wavelength of 1.5516 μm. It can be seen that the SFDR of the device reaches 114.1dB Hz2/3Compared with the 97dB Hz of the common MZ modulator2/3The improvement is 17 dB.
The introduction of the microring causes a difference in loss between the modulation arm and the reference arm of the MZ modulator, in order to keep the upper and lower arms close to 1: 1, and further improving the extinction ratio of the device, wherein the splitting ratio of the adjustable beam splitter needs to be adjusted to be 0.62: 0.38. fig. 10 is a graph of the normalized output intensity of the coupling arm of the tunable beam splitter 4 as a function of the chemical potential of the graphene 18 on the beam splitter 4. It can be seen that when the chemical potential of the graphene 18 is selected to be 0.42eV, the splitting ratio of the tunable beam splitter 4 reaches a desired value.
The above-mentioned embodiments only express the specific embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present application. It should be noted that, for those skilled in the art, without departing from the technical idea of the present application, several changes and modifications can be made, which are all within the protection scope of the present application.
Claims (9)
1. The graphene-based high-linearity micro-ring auxiliary MZ modulator is characterized in that the high-linearity micro-ring auxiliary MZ modulator is fixed on a substrate 7 and specifically comprises a micro-ring waveguide structure 5, a phase modulation structure 1, a signal modulation structure 2, a modulation coupling structure 3 and an MZ modulator 6 comprising an adjustable beam splitter.
2. The graphene-based high linearity micro-ring auxiliary MZ modulator of claim 1, wherein said micro-ring waveguide structure 5 integrates a phase modulating structure 1 and a signal modulating structure 2 and maintains a fixed spacing with a modulating coupling structure 3 of the same curvature.
3. The phase modulation structure 1 wraps the graphene layer 16, the modulation coupling structure 3 wraps the graphene layer 17, and the adjustable beam splitter 4 wraps the graphene layer 18.
4. The graphene layers 16, 17 and 18 are separated from the waveguide material and the cladding material by a thickness of separation medium 13, 14 and 15, and the graphene layers 16, 17 and 18 extend away from the waveguide and are connected to the electrodes 9, 10 and 11 respectively.
5. The signal modulating structure 2 and the dc bias 8 apply an electrical signal and a bias voltage via the electrodes.
6. The graphene-based high-linearity micro-ring auxiliary MZ modulator of claim 2, wherein said high-linearity micro-ring auxiliary MZ modulator has a waveguide material of silicon.
7. The graphene-based high linearity micro-ring auxiliary MZ modulator of claim 3, wherein said substrate 7 material is silicon dioxide.
8. The graphene-based high linearity micro-ring auxiliary MZ modulator of claim 4, wherein said isolating media 13, 14 and 15 is hexagonal boron nitride (hBN).
9. The graphene-based high linearity micro-ring auxiliary MZ modulator of any one of claims 1 to 5, wherein said adjustable beam splitters of said phase modulating structure 1, said coupling modulating structure 3 and said MZ modulator 6 are configured to modulate the structural modulation process by applying a bias voltage to graphene layers 16, 17 and 18 to modulate the chemical potential thereof.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114024612A (en) * | 2021-11-15 | 2022-02-08 | 之江实验室 | Silicon-based modulator chip for optical domain nonlinear distortion compensation and nonlinear distortion compensation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103941345A (en) * | 2014-05-06 | 2014-07-23 | 苏州大学 | Two-dimensional stratified material based SOI (Semicon-on-insulator) base micro loop filter |
| CN105372853A (en) * | 2015-12-15 | 2016-03-02 | 电子科技大学 | Micro-ring resonant cavity electro-optical modulator based on graphene/molybdenum disulfide heterojunction |
| CN109387956A (en) * | 2018-11-14 | 2019-02-26 | 北京邮电大学 | Graphene electro-optical modulator based on narrow slit wave-guide |
| CN112162420A (en) * | 2020-09-14 | 2021-01-01 | 电子科技大学 | Micro-ring coupling modulation structure based on graphene fine-tuning coupling efficiency and use method thereof |
-
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- 2021-07-12 CN CN202110793625.8A patent/CN113448135A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103941345A (en) * | 2014-05-06 | 2014-07-23 | 苏州大学 | Two-dimensional stratified material based SOI (Semicon-on-insulator) base micro loop filter |
| CN105372853A (en) * | 2015-12-15 | 2016-03-02 | 电子科技大学 | Micro-ring resonant cavity electro-optical modulator based on graphene/molybdenum disulfide heterojunction |
| CN109387956A (en) * | 2018-11-14 | 2019-02-26 | 北京邮电大学 | Graphene electro-optical modulator based on narrow slit wave-guide |
| CN112162420A (en) * | 2020-09-14 | 2021-01-01 | 电子科技大学 | Micro-ring coupling modulation structure based on graphene fine-tuning coupling efficiency and use method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114024612A (en) * | 2021-11-15 | 2022-02-08 | 之江实验室 | Silicon-based modulator chip for optical domain nonlinear distortion compensation and nonlinear distortion compensation method thereof |
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