CN108267678A - A kind of method for building up of diode junction temperature on-line measurement school temperature curve - Google Patents
A kind of method for building up of diode junction temperature on-line measurement school temperature curve Download PDFInfo
- Publication number
- CN108267678A CN108267678A CN201710750858.3A CN201710750858A CN108267678A CN 108267678 A CN108267678 A CN 108267678A CN 201710750858 A CN201710750858 A CN 201710750858A CN 108267678 A CN108267678 A CN 108267678A
- Authority
- CN
- China
- Prior art keywords
- temperature
- current
- formula
- under
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a kind of method for building up of diode junction temperature on-line measurement school temperature curve, belong to the field of measuring technique of semiconductor devices.Device under test is put into incubator, Temperature of Warm Case is adjusted and to arbitrary temp value and keeps stable, junction temperature is equal to the set temperature of incubator at this time.Apply a constant low current I for diode, measure voltage value V under this condition.Because the electric current I very littles being passed through, Wen Sheng will not be caused using continuous electric signal.Experimental data is arranged by theoretical model, calculate the key parameter under the conditions of low current, the parameter not changed with size of current is substituted into theoretical model again, the correspondence of the Current Voltage and temperature under current state is derived using theoretical model, and draw school temperature curve.The present invention establishes the school temperature curve library under current state by the experiment conclusion under the conditions of low current, and efficiency is improved in engineering, gathers around and has wide practical use.
Description
Technical field
This method belongs to the field of measuring technique of semiconductor devices.This method is mainly used in the knot of PN junction diode device
Warm on-line measurement, in order to monitor the state of junction temperature prevention device damage.
Background technology
With constantly increasing for semiconductor devices power density, heat is generated during work and is continuously increased, causes PN junction temperature
Rise, lead to the reliability of device to reduce, the lost of life even generation moment burns.Therefore, accurately measuring PN junction temperature has
Help monitor the working condition of device, ensure device use reliability, device caused by prevention overheat is damaged.
The junction temperature On-line Measuring Method mentioned in document at present needs to measure high current and height electricity under different temperature points
Then school temperature curve under the conditions of pressure measures voltage and current during work, corresponding local data in real time as local data
Find junction temperature.But high current condition causes from heating up, and influences the precision of school temperature curve, it is therefore necessary to using pulse test, strictly
Pulsewidth and duty ratio are controlled, this is very high to measuring apparatus requirement, and measurement efficiency is low.To simplify school temperature curve library under high current
Structure and improve efficiency, patent of the present invention is proposed based on theoretical model, and high current is established by low current test result
Lower school temperature curve.
Invention content
The present invention is intended to provide a kind of utilize diode school temperature under the conditions of low current experimental result and model foundation high current
The method of curve library coordinates experiment to measure and carries out on-line measurement to diode temperature with theoretical model.
For achieving the above object, the technical solution adopted by the present invention is as follows：
S1, device under test is put into incubator, adjusts Temperature of Warm Case and to arbitrary temp value and keep stable, at this time junction temperature
Equal to the set temperature of incubator.
S2, apply a constant low current I for diode, measure voltage value V under this condition.Because the electricity being passed through
I very littles are flowed, so Wen Sheng will not be caused using continuous electric signal.
S3, experimental data is arranged by theoretical model, calculates the key parameter under the conditions of low current, it will not be with
The parameter that size of current changes substitutes into theoretical model again, derived using theoretical model Current Voltage under current state with
The correspondence of temperature, and draw school temperature curve.
A kind of method for building up of diode junction temperature on-line measurement school temperature curve, the method includes the steps of：
In Semiconductor Physics diode, for a PN junction, forward current IFWith voltage VFRelationship it is as follows：
In formula, q is electronic charge, and k is Boltzmann constant, and T is absolute temperature, ISFor reverse saturation current；
C is the constant related with junction area and doping concentration, and r is to the relationship constant of temperature for minority carrier transport factor
The numerical value of r depends on relationship of the minority carrier transport factor to temperature.(2) formula is brought into (1) formula both sides to take the logarithm：
As the voltage V caused by ΔFVariable quantity 1% hereinafter, therefore be omitted in the method, therefore (3) formula is write as：
In (5) formula, electric current IFFor a definite value, thereforeFor a definite value, i.e., in the constant feelings of electric current
The voltage value at diode both ends and temperature have good linear relationship, and slope under conditionVg(0)For absolute zero
When the conduction band bottom of the PN junction material and potential difference of top of valence band.
In T1Apply low current I under temperature conditionF1, then voltage V at this timeF1It is write as：
When temperature changes, and current value is still IF1When, then voltage value at this time：
By formula (6) and formula (7) simultaneous, unknown parameter C is eliminated, obtains expression formula：
BecauseSo formula (8) is changed into：
There are a unknown parameter C in formula (5), according to formula (5) and formula (9), list equation：
Only there are one unknown parameter C in formula (12), and electric current is had been obtained in testing previous as IF1, temperature T1
Under the conditions of voltage value VF1, parameter C can be obtained by being brought directly to formula calculating.The parameter is unrelated with size of current and temperature, therefore big
The parameter size is constant under electric current.In formula (5), by current value IFThe current condition can be obtained by bringing required high current value into
Under voltage-temperature functional relation, that is, draw out the school temperature curve under arbitrary high current.
Compared with prior art, this invention simplifies the measurement process of school temperature curve library under the conditions of traditional high current, lead to
Experiment conclusion under the conditions of too little current establishes the school temperature curve library under current state, and efficiency is improved in engineering, is possessed
It is widely applied prospect.
Specific embodiment
With reference to specific example, illustrate how to establish PN junction school temperature curve under the conditions of high current, including following step
Suddenly：
Diode extraction wire is put into incubator by S1, is adjusted Temperature of Warm Case and to arbitrary value and is kept constant, at such a temperature
Constant low current is applied, and measure voltage value to diode.It needs exist for illustrating：The electric current that is passed through in experiment it is minimum (such as
1mA), Wen Sheng will not equally be generated without pulse mode.
S2 uses formula (5) and formula (9) in theoretical model, and C values are obtained according to experimental data.Formula in theoretical model
(5) voltage-temperature functional relation under electric current controlled condition is represented, each parameter is that constant is known and unrelated with size of current.
Required current value is brought into theoretical model in S3 practical applications, you can obtain voltage under arbitrarily large current condition-
Temperature funtion relationship, you can school temperature curve library carries out junction temperature on-line measurement under the conditions of drawing out high current.
Claims (2)
1. a kind of method for building up of diode junction temperature on-line measurement school temperature curve, it is characterised in that：
S1, device under test is put into incubator, adjusts Temperature of Warm Case and to arbitrary temp value and keep stable, junction temperature is equal at this time
The set temperature of incubator；
S2, apply a constant low current I for diode, measure voltage value V under this condition；Because the electric current I being passed through
Very little, so Wen Sheng will not be caused using continuous electric signal；
S3, experimental data is arranged by theoretical model, calculates the key parameter under the conditions of low current, it will not be with electric current
The parameter that size changes substitutes into theoretical model again, and Current Voltage and temperature under current state are derived using theoretical model
Correspondence, and draw school temperature curve.
2. a kind of method for building up of diode junction temperature on-line measurement school temperature curve according to claim 1, this method include
Following steps：
In Semiconductor Physics diode, for a PN junction, forward current IFWith voltage VFRelationship it is as follows：
In formula, q is electronic charge, and k is Boltzmann constant, and T is absolute temperature, ISFor reverse saturation current；
C is the constant related with junction area and doping concentration, and r is relationship constant, that is, r of the minority carrier transport factor to temperature
Numerical value depends on relationship of the minority carrier transport factor to temperature；(2) formula is brought into (1) formula both sides to take the logarithm：
As the voltage V caused by ΔFVariable quantity 1% hereinafter, therefore be omitted in the method, therefore (3) formula is write as：
In (5) formula, electric current IFFor a definite value, thereforeFor a definite value, i.e., in the case where electric current is constant
The voltage value and temperature at diode both ends have good linear relationship, and slopeVg(0)PN during for absolute zero
Tie the conduction band bottom of material and the potential difference of top of valence band；
In T1Apply low current I under temperature conditionF1, then voltage V at this timeF1It is write as：
When temperature changes, and current value is still IF1When, then voltage value at this time：
By formula (6) and formula (7) simultaneous, unknown parameter C is eliminated, obtains expression formula：
BecauseSo formula (8) is changed into：
There are a unknown parameter C in formula (5), according to formula (5) and formula (9), list equation：
Only there are one unknown parameter C in formula (12), and electric current is had been obtained in testing previous as IF1, temperature T1Condition
Under voltage value VF1, parameter C can be obtained by being brought directly to formula calculating；The parameter is unrelated with size of current and temperature, therefore high current
The lower parameter size is constant；In formula (5), by current value IFBringing required high current value into can obtain under the current condition
Voltage-temperature functional relation draws out the school temperature curve under arbitrary high current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710750858.3A CN108267678A (en) | 2017-08-28 | 2017-08-28 | A kind of method for building up of diode junction temperature on-line measurement school temperature curve |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710750858.3A CN108267678A (en) | 2017-08-28 | 2017-08-28 | A kind of method for building up of diode junction temperature on-line measurement school temperature curve |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108267678A true CN108267678A (en) | 2018-07-10 |
Family
ID=62771780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710750858.3A Pending CN108267678A (en) | 2017-08-28 | 2017-08-28 | A kind of method for building up of diode junction temperature on-line measurement school temperature curve |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108267678A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110376500A (en) * | 2019-07-26 | 2019-10-25 | 北京工业大学 | Transient temperature rise On-line Measuring Method in a kind of power MOS (Metal Oxide Semiconductor) device opening process |
| CN112162186A (en) * | 2020-09-25 | 2021-01-01 | 华电(烟台)功率半导体技术研究院有限公司 | Self-calibration method for calibrating temperature coefficient of power electronic device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103176489A (en) * | 2013-02-06 | 2013-06-26 | 南京千韵电子科技有限公司 | Method and device for controlling chip inner temperature and experiment instrument based on same method |
| CN104036144A (en) * | 2014-06-26 | 2014-09-10 | 厦门大学 | Pulsed LED voltage, current and junction temperature feature modeling method |
| KR20160076460A (en) * | 2014-12-19 | 2016-06-30 | 전자부품연구원 | Apparatus and method for testing semiconductor device using dynamic characteristics of junction temperature |
| CN106771942A (en) * | 2016-11-09 | 2017-05-31 | 北京工业大学 | Bipolar transistor is operated in the junction temperature method for real-time measurement of amplification region |
-
2017
- 2017-08-28 CN CN201710750858.3A patent/CN108267678A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103176489A (en) * | 2013-02-06 | 2013-06-26 | 南京千韵电子科技有限公司 | Method and device for controlling chip inner temperature and experiment instrument based on same method |
| CN104036144A (en) * | 2014-06-26 | 2014-09-10 | 厦门大学 | Pulsed LED voltage, current and junction temperature feature modeling method |
| KR20160076460A (en) * | 2014-12-19 | 2016-06-30 | 전자부품연구원 | Apparatus and method for testing semiconductor device using dynamic characteristics of junction temperature |
| CN106771942A (en) * | 2016-11-09 | 2017-05-31 | 北京工业大学 | Bipolar transistor is operated in the junction temperature method for real-time measurement of amplification region |
Non-Patent Citations (1)
| Title |
|---|
| 卢烁今: "双极型晶体管发射结正向I-V特性曲线的汇聚特性", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110376500A (en) * | 2019-07-26 | 2019-10-25 | 北京工业大学 | Transient temperature rise On-line Measuring Method in a kind of power MOS (Metal Oxide Semiconductor) device opening process |
| CN112162186A (en) * | 2020-09-25 | 2021-01-01 | 华电(烟台)功率半导体技术研究院有限公司 | Self-calibration method for calibrating temperature coefficient of power electronic device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107192934B (en) | Method for measuring incrustation transient thermal impedance of high-power IGBT | |
| CN102608511B (en) | Method for measuring junction temperature and thermal resistance of metal-oxide semiconductor tube | |
| CN107621599A (en) | A kind of method of measurement IGBT variations injunction temperatures in high temperature reverse bias experiment | |
| Fong et al. | Accurate series resistance measurement of solar cells | |
| CN102368274B (en) | Electro-thermal simulation method for FS (Field Stop) type IGBT (Insulated Gate Bipolar Transistor) transient temperature characteristic | |
| CN102944824B (en) | Test method for testing rectifier diode transient high temperature reverse leakage current | |
| CN104297658B (en) | Metal-oxide half field effect transistor thermo-resistance measurement plate | |
| CN108267678A (en) | A kind of method for building up of diode junction temperature on-line measurement school temperature curve | |
| CN106054052A (en) | Semiconductor device temperature-voltage-current three-dimensional temperature-adjusting curve surface establishment method | |
| CN108572306A (en) | The thermo-resistance measurement circuit and method of inverse conductivity type IGBT | |
| Raedani et al. | Design, testing and comparison of P&O, IC and VSSIR MPPT techniques | |
| Sachenko et al. | Specific features of current flow in α-Si: H/Si heterojunction solar cells | |
| TWI467165B (en) | Measurement method, measurement apparatus, and computer program product | |
| CN102759544A (en) | Method for testing thermal resistance of high-power silicon carbide diode | |
| CN102565654A (en) | Measurement system and measuring method for derating curve of LED (light-emitting diode) | |
| Gaevskii | Method for determining parameters of PV modules in field conditions | |
| Dalapati et al. | Influence of temperature on the performance of high power AlGaInP based red light emitting diode | |
| CN203689187U (en) | Temperature control device for detecting semiconductor device | |
| CN112699588B (en) | Thermoelectric coupling modeling method for power semiconductor chip unit cell | |
| CN107576422A (en) | A kind of method of on-line measurement bipolar transistor device junction temperature | |
| Zhu et al. | Investigation of Two High-Temperature Bipolar Phenomena and Characteristics of 1.2 kV SiC Power Diodes for High-Temperature Applications | |
| CN109211963A (en) | System and method for detecting thermal resistance of heat-conducting material | |
| CN103196588A (en) | Method for obtaining internal temperature of parallel groove clamp | |
| CN106841764B (en) | A method of output electric current measure is realized using MOSFET pipe internal resistance | |
| Alfaramawi | Numerical simulation of the ideality factor of non-ideal n-Si/p-diamond heterojunction diodes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180710 |