CN108267298A - The test equipment and its method of cmos image sensor spectral response space radiation damage - Google Patents
The test equipment and its method of cmos image sensor spectral response space radiation damage Download PDFInfo
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- CN108267298A CN108267298A CN201711223104.9A CN201711223104A CN108267298A CN 108267298 A CN108267298 A CN 108267298A CN 201711223104 A CN201711223104 A CN 201711223104A CN 108267298 A CN108267298 A CN 108267298A
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- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
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Abstract
The present invention provides the test equipments and its method of a kind of cmos image sensor spectral response space radiation damage：Light is sent out using halogen light sources such as bromine tungsten filament lamps, uniform light is exported after the countless secondary reflections of integrating sphere, uniform light becomes the monochromatic light of different wave length by optical filter different in filter wheel, adjustment is placed on the cmos image sensor to be measured on three-dimensional sample adjustment platform, make the monochromatic light exposure of different wave length on photosurface, the spectral response of cmos image sensor is obtained according to acquired image information, after cmos image sensor is irradiated by high energy particle again, it is once tested again, obtains the spectral response radiation injury of device.The present invention can carry out quantitative assay to the radiation injury of cmos image sensor spectral response, and the mechanism study that photo absorption property is degenerated after being irradiated for the type selecting of star cmos image sensor, radiation tolerance design and device provides detection means.
Description
Technical field
The present invention relates to photoelectronic imaging device image quality detection technique field, in particular to a kind of cmos image
The test equipment and its method of sensor spectral response space radiation damage.
Background technology
Cmos image sensor (CMOS Image sensor, abbreviation CIS) is applied in two big field of spacecraft and load
Primary Component, be widely used in the aerospace engineering such as remote sensing of the earth observation, extraterrestrial target monitoring, Spacecraft Attitude Control.Because of it
Dot structure and peripheral sub-circuit are increasingly complex, and therefore, Space Radiation Effects are very sensitive caused by Energetic particle, from
And bring risk to space application.It is usually irradiated in type of project with the degeneration of spectral response to evaluate CIS by Space Particle
Radiation injury afterwards is conducive to evaluate the degeneration of CIS photosensitive regions in this way.CIS spectral responses after research Space Particle predose
Test method, can be the type selecting of China's aerospace Model engineering CIS, device research institute radiation tolerance design, device
The mechanism study that photo absorption property is degenerated after being irradiated provides detection means, has important practical significance.
Sun Jingxu etc. discloses patent of invention in 2012《A kind of equipment and its survey for CCD modulation transfer function tests
Method for testing》, the instrument that is used in the invention includes halogen light source chamber, monochromator, integrating sphere (5) device, graduation plate portion, big number
It is worth aperture micro objective, tri- adjustment frames of CCD and CCD to be measured；Li Yudong, Wang Bo, Guo Qi are equal to 2013 in optical precision work
Scientific paper has been delivered in journey《CCD tests system with cmos image sensor radiation effect》, paper is pointed out defeated using monochromator
Go out uniform monochromatic light, illuminate the rectangle graticle for being placed on focal surface of collimator tube position by projection objective, using anti-
It penetrates after mirror changes optical path direction and is injected into parallel light tube, the collimated monochromatic light of parallel light tube output is divided rectangle by image-forming objective lens
It draws plate to be imaged onto on the photosurface of photoelectronic imaging device, the spectrum for obtaining photoelectronic imaging device according to acquired image information is rung
It should.
Since method disclosed in Sun Jingxu is mainly for the test of CCD modulation transfer functions, resolving power test target is using spy
Determine spatial frequency graticle, it is impossible to for the spectral response of testing photoelectronic image device；In the paper delivered disclosed in Li Yudong
The homogeneous beam of the monochromator output of application is smaller, can not cover the photosensitive area of entire device, can not ensure the weight repeatedly tested
Renaturation, therefore the monochromatic light obtained in this method cannot be used for objective evaluation photoelectronic imaging device spectrum after by High energy particles Radiation
The radiation injury of response.
Invention content
The defects of in order to overcome the prior art, it is a primary object of the present invention to provide a kind of cmos image sensor spectrum
The test equipment and its method of space radiation damage are responded, to solve in the prior art because being unable to objective evaluation light during poor repeatability
Electrical imaging device is after by High energy particles Radiation the problem of spectral response radiation injury.
To achieve these goals, one aspect of the present invention provides a kind of cmos image sensor spectral response space
The test equipment of radiation injury, including tunable light source, filter wheel and three-dimensional sample adjust platform, test equipment further include light conducting cylinder,
Integrating sphere, standard detector and barn door；Tunable light source is positioned in light conducting cylinder, and the light-emitting window of light conducting cylinder and integrating sphere enter light
Mouth connection, barn door are movably set to integrating sphere side incident mouth, and for adjusting the luminous flux into integrating sphere, standard is visited
It surveys device to be positioned on integrating sphere inner wall, the irradiation level of uniform light that the optical window for monitoring in real time by integrating sphere exports, filter wheel
On the filter plate of different wave length is installed；The light that tunable light source is sent out passes sequentially through light conducting cylinder, integrating sphere, filter plate, reaches three
Tie up the cmos image sensor to be measured on sample adjustment platform.
Further, it is provided with fixed light source in integral sphere sidewall.
Further, tunable light source is bromine tungsten filament lamp.
Further, fixed light source is bromine tungsten filament lamp.
Further, barn door is moved by stepping motor drive.
Another aspect of the present invention provides a kind of cmos image sensor spectral response space radiation damage measure side
Method includes the following steps：
Step 1 after the optical filter for passing light through integrating sphere and a length of λ of filter wheel upper ripple, obtains the monochromatic light of wavelength X, adjusts
Whole three-dimensional sample adjusts platform, makes on the monochromatic light exposure to the photosurface of cmos image sensor to be measured of wavelength X, CMOS figures to be measured
As sensor acquires image；
Step 2 passes light through the optical filter of different wave length on filter plate to change the value of monochromatic wavelength X, to be measured
Cmos image sensor acquires corresponding image；
Step 3 surveys the responsiveness of cmos image sensor according to the following formula calculating：
Wherein, RλBy survey cmos image sensor receive wavelength X monochromatic light when responsiveness；V is standard detector
Output signal；R is the scaled values of standard detector wavelength X；ASArea for standard detector；IλFor a length of λ markers of monochromatic optical wave
The output current of quasi- detector；Ad is measured device pixel area；T is the time of integration；Draw wavelength X and responsiveness RλRelationship
Curve one；
Step 4 after surveying cmos image sensor with high energy particle irradiation steps one to three, repeats step 1 to three
Operation, the responsiveness R after being irradiatedλ' and wavelength X and responsiveness Rλ' relation curve two；
Step 5 compares curve one and curve two, obtains light after surveyed cmos image sensor is irradiated by high energy particle
The space radiation damage of spectrum response；
Step 6 adjusts tunable light source and/or anti-dazzling screen, repeats step 1 to step 5..
The present invention operation principle be：Light is sent out using halogen light sources such as bromine tungsten filament lamps, by the countless secondary reflections of integrating sphere
After export uniform light, uniform light becomes the monochromatic light of different wave length by optical filter different in filter wheel, and adjustment is placed on three
The cmos image sensor to be measured on sample adjustment platform is tieed up, makes the monochromatic light exposure of different wave length on photosurface, according to being adopted
The image information of collection obtains the spectral response of cmos image sensor, then after cmos image sensor is irradiated by high energy particle,
It is once tested again, you can obtain the spectral response radiation injury of device.
The beneficial effects of the invention are as follows：The present invention is using each spectral coverage monochromatic light to cmos image sensor by high energy particle spoke
Spectral response radiation injury according to after is tested, and the radiation injury of cmos image sensor spectral response can be quantified
Assay, for star cmos image sensor type selecting, radiation tolerance design and device irradiated after optical Response
The mechanism study that can be degenerated provides detection means；Three-dimensional regulation is carried out to barn door and cmos image sensor using stepper,
Alleviate the workload of cmos image sensor spectral response radiation injury test；It is compact-sized, it is simple to operate.
Description of the drawings
The accompanying drawings which form a part of this application are used to provide further understanding of the present invention, and of the invention shows
Meaning property embodiment and its explanation do not constitute improper limitations of the present invention for explaining the present invention.In the accompanying drawings：
Fig. 1 shows the test equipment structure of cmos image sensor spectral response space radiation damage；
Fig. 2 shows the testing process of cmos image sensor spectral response space radiation damage.
Specific embodiment
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the application can phase
Mutually combination.The present invention will be described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
It is noted that following detailed description is all illustrative, it is intended to provide further instruction to the application.It is unless another
It indicates, all technical and scientific terms used herein has usual with the application person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
It is also intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or combination thereof.
Now, the illustrative embodiments according to the application are more fully described with reference to the accompanying drawings.However, these are exemplary
Embodiment can be implemented by many different forms, and should not be construed to be limited solely to embodiment party set forth herein
Formula.It should be understood that these embodiments are provided so that disclosure herein is thoroughly and complete, and these are shown
The design of example property embodiment is fully conveyed to those of ordinary skill in the art, in the accompanying drawings, for the sake of clarity, expands layer
With the thickness in region, and make identical device is presented with like reference characters, thus description of them will be omitted.
It please refers to Fig.1, the test the present invention provides a kind of cmos image sensor spectral response space radiation damage is set
It is standby, platform 8 is adjusted including tunable light source 1, filter wheel 7 and three-dimensional sample, test equipment further includes light conducting cylinder 2, integrating sphere 5, standard
Detector 6 and barn door 3；Tunable light source 1 is positioned in light conducting cylinder 2, and the light-emitting window of light conducting cylinder 2 connects with the light inlet of integrating sphere 5
It connects, barn door 3 is movably set to 5 side incident mouth of integrating sphere, and for adjusting the luminous flux into integrating sphere 5, standard is visited
It surveys device 6 to be positioned on 5 inner wall of integrating sphere, the irradiation level of uniform light that the optical window for monitoring in real time by integrating sphere 5 exports, filtering
The filter plate of different wave length is installed on wheel 7；The light that tunable light source 1 is sent out passes sequentially through light conducting cylinder 2, integrating sphere 5, filter plate,
Reach the cmos image sensor to be measured on three-dimensional sample adjustment platform 8.
The a diameter of 500mm of side incident mouth of usual integrating sphere 5, a diameter of 125mm of optical window, in the present embodiment, filter wheel 7
On 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm etc. are installed not
The optical filter of co-wavelength, so that the uniform light that 5 optical window of integrating sphere is sent out forms respective wavelength by the optical filter of different wave length
Monochromatic light.
In order to increase the dynamic output range of integrating sphere, fixed light source 4,1 He of tunable light source are set on 5 side wall of integrating sphere
Fixed light source 4 is used cooperatively.
Usually, tunable light source 1 and fixed light source 4 select halogen lamp, and such as bromine tungsten filament lamp, iodine-tungsten lamp, tunable light source 1 can be selected
Power is the halogen lamp of 100W, and the halogen lamp that power is 10W, 20W, 35W, 50W can be selected in fixed light source 4.
The movement of barn door 3 can be realized, but in view of precision and surely by the various ways such as mechanical, manual in the present invention
It is qualitative, select stepping motor that barn door is driven to be moved in embodiment, so as to adjust into the luminous flux in integrating sphere 5,
Further change the irradiation level of uniform light exported from integrating sphere 5.
It please refers to Fig.2, cmos image sensor spectral response space radiation damage measure is carried out using above-mentioned test equipment
Method, include the following steps：
Step 1 after the optical filter for passing light through integrating sphere 5 and a length of λ of 7 upper ripple of filter wheel, obtains the monochromatic light of wavelength X,
Three-dimensional sample adjustment platform 8 is adjusted, is made on the monochromatic light exposure to the photosurface of cmos image sensor to be measured of wavelength X, it is to be measured
Cmos image sensor acquires image；
Step 2 passes light through the optical filter of different wave length on filter plate to change the value of monochromatic wavelength X, to be measured
Cmos image sensor acquires corresponding image；
Step 3 surveys the responsiveness of cmos image sensor according to the following formula calculating：
Wherein, RλBy survey cmos image sensor receive wavelength X monochromatic light when responsiveness；V is standard detector 6
Output signal；R is the scaled values of 6 wavelength X of standard detector；ASArea for standard detector 6；IλDuring λ a length of for monochromatic optical wave
The output current of standard detector 6；Ad is measured device pixel area；T is the time of integration；Draw wavelength X and responsiveness Rλ's
Relation curve one；
Step 4 after surveying cmos image sensor with high energy particle irradiation steps one to three, repeats step 1 to three
Operation, the responsiveness R after being irradiatedλ' and wavelength X and responsiveness Rλ' relation curve two；
Step 5 compares curve one and curve two, obtains light after surveyed cmos image sensor is irradiated by high energy particle
The space radiation damage of spectrum response；
Step 6 adjusts tunable light source 1 and/or anti-dazzling screen, repeats step 1 to step 5.
The rated condition in laboratory is as follows：
20 ± 5 DEG C of environment temperature；Ambient humidity 45%-60%.
Cmos image sensor part is obtained device spectral response initial value by repeatedly testing, obtained by high energy particle predose
The experimental result repeatability error arrived is less than 2%, therefore with test method of the present invention to cmos image sensor part spectrum
It is objective rational that responsive radiation damage, which carries out evaluation,.
It can be seen from the above description that the above embodiments of the present invention realize following technique effect：
Spectral response after the present invention is irradiated cmos image sensor by high energy particle using each spectral coverage monochromatic light radiates
Damage is tested, and can carry out quantitative assay to the radiation injury of cmos image sensor spectral response, is used for star
The mechanism study that photo absorption property is degenerated after type selecting, radiation tolerance design and the device of cmos image sensor are irradiated carries
For detection means；Three-dimensional regulation is carried out to barn door and cmos image sensor using stepper, alleviates cmos image sensing
The workload of device spectral response radiation injury test；It is compact-sized, it is simple to operate.
It should be noted that term " first " in the description and claims of this application and above-mentioned attached drawing, "
Two " etc. be the object for distinguishing similar, and specific sequence or precedence are described without being used for.It should be appreciated that it uses in this way
Data can be interchanged in the appropriate case, so that presently filed embodiment described herein for example can be in addition to herein
Sequence other than those of diagram or description is implemented.In addition, term " comprising " and " having " and their any deformation, it is intended that
Be to cover it is non-exclusive include, for example, containing the process of series of steps or unit, method, system, product or equipment not
Be necessarily limited to those steps clearly listed or unit, but may include not listing clearly or for these processes, side
The intrinsic other steps of method, product or equipment or unit.
For ease of description, spatially relative term can be used herein, as " ... on ", " ... top ",
" ... upper surface ", " above " etc., for describing such as a device shown in the figure or feature and other devices or spy
The spatial relation of sign.It should be understood that spatially relative term is intended to comprising the orientation in addition to device described in figure
Except different direction in use or operation.For example, if the device in attached drawing is squeezed, it is described as " in other devices
It will be positioned as " under other devices or construction after the device of part or construction top " or " on other devices or construction "
Side " or " under other devices or construction ".Thus, exemplary term " ... top " can include " ... top " and
" in ... lower section " two kinds of orientation.The device can also other different modes positioning (being rotated by 90 ° or in other orientation), and
And respective explanations are made in opposite description to space used herein above.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, that is made any repaiies
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (6)
1. a kind of test equipment of cmos image sensor spectral response space radiation damage, including tunable light source（1）, filter wheel
（7）Platform is adjusted with three-dimensional sample（8）, which is characterized in that the test equipment further includes light conducting cylinder（2）, integrating sphere（5）, standard
Detector（6）And barn door（3）；The tunable light source（1）It is positioned over light conducting cylinder（2）It is interior, the light conducting cylinder（2）Light-emitting window with
The integrating sphere（5）Light inlet connection, the barn door（3）Movably it is set to the integrating sphere（5）Side incident mouth,
Enter the integrating sphere for adjusting（5）Luminous flux, the standard detector（6）It is positioned over the integrating sphere（5）On inner wall,
For monitoring in real time by the integrating sphere（5）Optical window output uniform light irradiation level, the filter wheel（7）On be equipped with not
The filter plate of co-wavelength；The tunable light source（1）The light sent out passes sequentially through the light conducting cylinder（2）, the integrating sphere（5）, institute
Filter plate is stated, reaches the three-dimensional sample adjustment platform（8）On cmos image sensor to be measured.
2. the test equipment of cmos image sensor spectral response space radiation damage according to claim 1, feature
It is, the integrating sphere（5）Fixed light source is provided on side wall（4）.
3. the test equipment of cmos image sensor spectral response space radiation damage according to claim 1, feature
It is, the tunable light source（1）For bromine tungsten filament lamp.
4. the test equipment of cmos image sensor spectral response space radiation damage according to claim 1, feature
It is, the fixed light source（4）For bromine tungsten filament lamp.
5. the test equipment of cmos image sensor spectral response space radiation damage according to claim 1, feature
It is, the barn door（3）It is moved by stepping motor drive.
6. the test side based on the test equipment that cmos image sensor spectral response space radiation described in claim 1 damages
Method, which is characterized in that include the following steps：
Step 1 passes light through the integrating sphere（5）With the filter wheel（7）After the optical filter of a length of λ of upper ripple, wavelength X is obtained
Monochromatic light, adjust three-dimensional sample adjustment platform（8）, the monochromatic light exposure of the wavelength X is made to be sensed to cmos image to be measured
On the photosurface of device, the cmos image sensor acquisition image to be measured；
Step 2 passes light through the optical filter of different wave length on the filter plate to change the value of the monochromatic wavelength X, institute
It states cmos image sensor to be measured and acquires corresponding image；
Step 3 surveys the responsiveness of cmos image sensor according to the following formula calculating：
Wherein, RλBy survey cmos image sensor receive wavelength X monochromatic light when responsiveness；V is the standard detector（6）
Output signal；R is the standard detector（6）The scaled values of wavelength X；ASFor the standard detector（6）Area；IλFor
Standard detector during monochromatic optical wave a length of λ（6）Output current；AdFor measured device pixel area；T is the time of integration；
Draw wavelength X and responsiveness RλRelation curve one；
Step 4 after surveying cmos image sensor with high energy particle irradiation steps one to three, repeats the operation of step 1 to three,
Responsiveness R after being irradiatedλ ’And wavelength X and responsiveness Rλ ’Relation curve two；
Step 5 compares the curve one and the curve two, obtains surveyed cmos image sensor and is irradiated by high energy particle
The space radiation damage of spectral response afterwards；
Step 6 adjusts the tunable light source（1）And/or the anti-dazzling screen, step 1 is repeated to step 5.
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