CN108257987A - Focal plane array detector and preparation method thereof - Google Patents
Focal plane array detector and preparation method thereof Download PDFInfo
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- CN108257987A CN108257987A CN201711240437.2A CN201711240437A CN108257987A CN 108257987 A CN108257987 A CN 108257987A CN 201711240437 A CN201711240437 A CN 201711240437A CN 108257987 A CN108257987 A CN 108257987A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 229910052738 indium Inorganic materials 0.000 claims abstract description 96
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 96
- 239000000758 substrate Substances 0.000 claims description 10
- 230000026267 regulation of growth Effects 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 7
- 208000032366 Oversensing Diseases 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 11
- 238000001259 photo etching Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
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- 238000004891 communication Methods 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
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- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
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- H01L27/144—Devices controlled by radiation
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Abstract
The invention discloses a kind of focal plane array detectors and preparation method thereof, including epitaxial layer, the lower surface of epitaxial layer is provided with the first doped region of multiple recess, and the interface of epitaxial layer and the first doped region is the first PN junction, and pixel hole is offered between the first adjacent PN junction；Covered with the first passivating film, the first passivating film positioned at the first doped region surface offers the first contact hole, and the second contact hole is offered positioned at the middle of the first passivating film of pixel hole surface for the lower surface of epitaxial layer；The first indium bump and the second indium bump are separately filled in first contact hole and the second contact hole, the first indium bump and the second indium bump protrude epitaxial layer；The upper surface of epitaxial layer is provided with the second doped region of multiple recess, and the second doped region connects one to one with the second indium bump.Present invention aims at solve the easy cross-talks of PN junction of adjacent picture elements, pixel efficiently uses the technical issues of area is small.
Description
Technical field
The invention belongs to field of photoelectric technology, more particularly, to a kind of focal plane array detector and preparation method thereof.
Background technology
Focal plane array detector develops as silicon-based semiconductor towards the direction of small size, high integration.But
Due to the particularity of material, difficulty of processing and technical bottleneck seriously hinder the further hair of focal plane array detector technology
Exhibition.Especially existing crosstalk problem between the PN junction of adjacent picture elements, the distribution mode of the PN junction of traditional adjacent picture elements is plane
Formula, i.e., adjacent PN junction are located at same level, and the spacing of adjacent PN junction is too small in order to prevent causes cross-talk, adjacent PN junction
Spacing is larger, and PN areas is caused to utilize and are restricted.In order not to be susceptible to crosstalk problem, the PN junction of adjacent picture elements will be kept
A certain distance, it means that only some area can be ion implanted to form PN junction each pixel, absorb photon conversion letter
Number, other regions cannot play the role of opto-electronic conversion.As pixel is less and less, the area that efficiently uses of pixel also becomes more next
Smaller, by taking 15 μm of pixel distances as an example, ion implanted region diameter only has pixel apart from half, efficiently uses area and there was only 1/4；
In the case of 10 μm of pixel distances, 10% or so may be only had by efficiently using area.On the other hand, too small ion implanting area,
Enable the photosignal that PN junction acquires very faint, cause focal plane array detector signal-to-noise ratio too low, it is difficult to meet performance
Demand.
At present, it is badly in need of developing a kind of focal plane array detector, the PN junction of adjacent picture elements in the prior art can be solved
The technical issues of easy cross-talk, the photosignal for efficiently using the small caused acquisition of area of pixel are faint, and signal-to-noise ratio is too low.
Invention content
For the disadvantages described above or Improvement requirement of the prior art, the present invention provides a kind of focal plane array detector,
Purpose be to solve the easy cross-talks of PN junction of adjacent picture elements, pixel to efficiently use the small photosignal for leading to acquisition of area micro-
It is weak, the technical issues of signal-to-noise ratio is too low.
To achieve the above object, one side according to the invention provides a kind of focal plane array detector, including outer
Prolong layer, the lower surface of the epitaxial layer is provided with the first doped region of multiple recess, the epitaxial layer and first doped region
Interface for the first PN junction, offer pixel hole between adjacent the first PN knots；
The lower surface of the epitaxial layer is covered with the first passivating film, the first passivating film positioned at the first doped region surface
The first contact hole is offered, the second contact hole is offered positioned at the middle of the first passivating film of the pixel hole surface；
The first indium bump and the second indium bump are separately filled in first contact hole and second contact hole, it is described
First indium bump protrudes the epitaxial layer with second indium bump；
The upper surface of the epitaxial layer is provided with the second doped region of multiple recess, second doped region and described second
Indium bump connects one to one, and the interface of the epitaxial layer and second doped region is the second PN junction.
Preferably, first indium bump protrudes the bottom of the epitaxial layer portion positioned at same with second indium bump
In plane.
Preferably, there are the registration holes for extending vertically through the epitaxial layer in the both sides of the epitaxial layer.
Preferably, adjacent first doped region and projection of second doped region in the upper surface of the epitaxial layer
It is misaligned.
Preferably, the upper surface of the epitaxial layer is covered with the second passivation layer.
Preferably, reading circuit plate and multiple third indium bumps are further included, each first indium bump with it is each described
The part of the second indium bump protrusion epitaxial layer connects one end of a third indium bump, the third indium bump respectively
The other end be connected with the reading circuit plate.
It is another aspect of this invention to provide that a kind of preparation method of focal plane array detector is provided, including walking as follows
Suddenly：
S1, epitaxial layer is covered on photosensitive substrate, the first doped region of recess is formed in the lower surface of the epitaxial layer,
Pixel hole is opened up between adjacent first doped region；
S2, the registration holes for extending vertically through the epitaxial layer are opened up in the both sides of the epitaxial layer；
S3, one passivating film of lower surface growth regulation in the epitaxial layer, and positioned at the of the first doped region surface
The first contact hole is opened up on one passivating film, the second contact is opened up in the middle of the first passivating film positioned at the pixel hole surface
Hole；
S4, in first contact hole and second contact hole the first indium bump and the second indium bump are prepared respectively；
S5, the removal photosensitive substrate form the second doped region of multiple recess in the upper surface of the epitaxial layer.
Preferably, flip chip bonding step is further included after the step S4, the flip chip bonding step includes：It will be each described
First indium bump is connect with each second indium bump with a third indium bump respectively, and the third indium bump is connected to reading
Go out on circuit board.
Preferably, two passivating film of upper surface growth regulation of the epitaxial layer is additionally included in after the step S5.
In general, by the above technical scheme conceived by the present invention compared with prior art, due to proposing one kind
Focal plane array detector and preparation method thereof can obtain lower advantageous effect：
(1) present invention proposes a kind of focal plane array detector, including：Epitaxial layer, the lower surface of epitaxial layer are provided with
The interface of first doped region of multiple recess, epitaxial layer and the first doped region is the first PN junction, between the first adjacent PN junction
Offer multiple pixel holes；The lower surface of epitaxial layer is covered with the first passivating film, the first passivation positioned at the first doped region surface
Film offers the first contact hole, and the second contact hole is offered positioned at the middle of the first passivating film of pixel hole surface；First connects
The first indium bump and the second indium bump are separately filled in contact hole and the second contact hole, the first indium bump and the second indium bump protrude
The epitaxial layer；The upper surface of epitaxial layer is provided with the second doped region of multiple recess, the second doped region and the second indium bump one
One is correspondingly connected with, and the interface of epitaxial layer and the second doped region is the second PN junction.
Focal plane array detector with this configuration, by the distribution mode of PN junction in adjacent picture elements from traditional plane formula
It is optimized for alternatively up and down three-dimensional, and just since the PN junction position of adjacent picture elements in the present invention is distributed in for solid alternatively up and down
In two planes of epitaxial layer so that the spacing of the spacing of adjacent PN junction from original horizontal direction becomes horizontal direction and adds Vertical Square
To spacing so that the spacing of adjacent PN junction is increased, the increase of spacing avoids the possibility of adjacent PN junction short circuit,
It solves the limitation that space limitation utilizes PN junction area, while increases PN junction area.
On the one hand PN junction area, which increases, enables the utilization rate of epitaxial film materials area to reach 100%, another aspect PN junction face
Long-pending increase can absorb photon signal to the greatest extent, and focal plane array detector is made to have higher signal-to-noise ratio, solves phase
The technical issues of hidden danger of adjacent pixel cross-talk and the weak photosignal of acquisition.Meanwhile said in terms of reliability, due to adjacent PN
Tubercle distance increases, and makes focal plane array detector that can more tolerate hot environment, becomes without there is cross-talk and other photoelectric properties
The problem of poor.
(2) preparation method of this focal plane array detector proposed by the present invention by the upper surface of epitaxial layer under
Ion implanting forms PN junction structure alternatively up and down respectively on surface, since the preparation method only needs to prepare in the prior art
The ion implanting step of PN junction is repeated once in the other one side of epitaxial layer 2 again in one plane, realizes that process is easy.This
Outside, there is indium bump so as to ensure the electric communication between indium bump on PN junction alternatively up and down to allow, needed in preparation process
Will on the first passivating film on open up contact hole, which is also the common technology means in the field, so the focal plane
The preparation method of detector array is easy to operate, but can make focal plane by focal plane array detector prepared by this method
The spacing of the adjacent PN junction of detector array increases, while also can farthest absorb photon signal, visits focal plane arrays (FPA)
Surveying utensil has the technical issues of higher signal-to-noise ratio, the hidden danger of solution adjacent picture elements cross-talk and weak photosignal of acquisition.
Description of the drawings
Fig. 1 is the schematic diagram of epitaxial layer lower surface ion implanting；
Fig. 2 is the schematic diagram that epitaxial layer lower surface opens up pixel hole；
Fig. 3 is the schematic diagram that epitaxial layer opens up registration holes；
Fig. 4 is one passivating film of growth regulation and the schematic diagram for opening up the first contact hole and the second contact hole；
Fig. 5 is the schematic diagram for preparing the first indium bump and the second indium bump；
Fig. 6 is the schematic diagram that flip chip bonding is carried out with reading circuit plate；
Fig. 7 is the schematic diagram for removing photosensitive substrate；
Fig. 8 is the schematic diagram of epitaxial layer upper surface ion implanting；
Fig. 9 is the schematic diagram of two passivating film of epitaxial layer upper surface growth regulation；
Figure 10 is the plane distribution schematic diagram of the first PN junction and the second PN junction.
In all the appended drawings, identical reference numeral is used for representing identical element or structure, wherein：
The photosensitive substrates of 1-；2- epitaxial layers；The first doped regions of 31-；The second doped regions of 32-；4- pixels hole；5- registration holes；
The first passivation layers of 61-；The second passivation layers of 62-；The first indium bumps of 71-；The second indium bumps of 72-；8- reading circuit plates；9- third indiums
Salient point；The first contact holes of 10-；The second contact holes of 11-.
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, it is right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
It does not constitute a conflict with each other and can be combined with each other.
It is term " on ", " under ", "front", "rear", "left", "right", " perpendicular it should be noted that in the description of the present invention
Directly ", the orientation of the instructions such as " level " or position relationship are based on orientation shown in the drawings or position relationship, are for only for ease of and retouch
It states the present invention and simplifies description, be not instruction or imply that signified device or element must have specific orientation, with specific
Azimuth configuration and operation, therefore be not considered as limiting the invention.
It should also be noted that, the term " on ", " under " in the present invention is based on the orientation described in Fig. 6~Fig. 9, Fig. 1~
Fig. 5 is the schematic diagram before the epitaxial layer in Fig. 6~Fig. 9 does not turn upside down.
The invention will be further described below in conjunction with the accompanying drawings.
As described in Figure 9, the present invention provides a kind of focal plane array detector, including epitaxial layer 2, the following table of epitaxial layer 2
Face is provided with the first doped region 31 of multiple recess；Epitaxial layer 2 is a kind of semi-conducting material, there is larger resistance, the first doping
Area 31 is epitaxial layer 2 by ion implanting formation, it is with the carrier polarity in epitaxial layer 2 on the contrary, the first doped region 31
The thickness of thickness ratio epitaxial layer 2 is small.The interface of 2 and first doped region 31 of epitaxial layer be the first PN junction, the first adjacent PN junction
Between offer pixel hole 4.
The lower surface of epitaxial layer 2 is covered with the first passivating film 61 to shield, positioned at 31 surface of the first doped region
First passivating film 61 offers the first contact hole 10, and is offered positioned at the middle of first passivating film 61 on 4 surface of pixel hole
Two contact holes 11.
It is separately filled with the first indium bump 71 and the second indium bump 72 in first contact hole 10 and the second contact hole 11, first
71 and second indium bump 72 of indium bump protrudes epitaxial layer 2.Preferably, the first indium bump 71 and the second indium bump 72 protrude epitaxial layer
The bottom of 2 parts is in the same plane, the first all indium bump 71 and second when being connect convenient for the later stage with third indium bump 9
Indium bump 72 can realize electric communication with third indium bump 9, farthest ensure all to have effectively achieved between indium bump
Electrical connection is not on indium bump does not connect, to be electrically connected the problem of effect is bad.
The upper surface of epitaxial layer 2 is provided with the second doped region 32 of multiple recess, the second doped region 32 and the second indium bump
72 connect one to one, and the interface of 2 and second doped region 32 of epitaxial layer is the second PN junction.
Because the first PN junction is alternately distributed with the second PN junction, so that PN junction is distributed in the two of epitaxial layer 2 alternatively up and down
A face, in 2 horizontal direction of epitaxial layer, horizontal axis is with all odd numbers on the longitudinal axis or the PN junction of all even number positions in a plane
On, on the other surface, the focal plane array detector of this structure can be improved farthest half PN junction in addition
Ion implanted region area so that PN junction area is maximum.
Focal plane array detector with this configuration, by the distribution mode of PN junction in adjacent picture elements from traditional plane formula
Alternatively up and down three-dimensional is optimized for, and just since the PN junction position of adjacent picture elements is spatially distributed in epitaxial layer alternatively up and down
Two planes on so that the spacing of the spacing of adjacent PN junction from original horizontal direction becomes horizontal direction and adds between vertical direction
Away from so that the spacing of adjacent PN junction is increased, the increase of spacing avoids the possibility of adjacent PN junction short circuit, so as to solve
The limitation that space limitation utilizes PN junction area, so as to increase PN junction area.
The utilization rate that PN junction area increases the material area on the one hand enabling epitaxial layer reaches 100%, another aspect PN junction
The increase of area can absorb photon signal to the greatest extent, and focal plane array detector is made to have higher signal-to-noise ratio, is solved
The technical issues of hidden danger of adjacent picture elements cross-talk, weak photosignal of acquisition.Meanwhile said in terms of reliability, due to adjacent PN
Tubercle distance increases, and makes focal plane array detector that can more tolerate hot environment, becomes without there is cross-talk and other photoelectric properties
The problem of poor.
Above-mentioned pixel hole 4 is for filling the first indium bump 71 below, and depth was not by carrying out the epitaxial layer 2 of processing
Original depth determined with ion implanting depth when forming the first doped region 31, the depth in pixel hole 4 be less than epitaxial layer 2 just
Beginning thickness is worn so as to which epitaxial layer 2 be avoided to be opened；The depth that the original depth of epitaxial layer 2 subtracts pixel hole 4 is less than the first doped region
31 thickness, so as to can be with the first indium for being prepared in pixel hole 4 when ensureing the second doped region 32 that ion implanting below is formed
71 direct electrical contact of salient point.
In 2 both sides of epitaxial layer there are the registration holes 5 for extending vertically through epitaxial layer 2, formd in this way in the upper surface of epitaxial layer 2
The hole of contraposition facilitates the later stage that needs can be accurately positioned when 2 upper surface ion implanting of epitaxial layer forms the second doped region 32
The position of ion implanting.
The first adjacent doped region 31 and projection of second doped region 32 in the upper surface of epitaxial layer 2 are misaligned, prevent phase
Adjacent PN junction cross-talk.Preferably, the first adjacent doped region 31 and projection phase of second doped region 32 in the upper surface of epitaxial layer 2
It cuts, can farthest improve ion implanted region area in this way, it is most so as to increase PN junction area.
Wherein, the diameter of the first contact hole 10 is less than the diameter of the first doped region 31, ensures in the first contact hole of later stage 10
First indium bump 71 of filling is only contacted with ion implanted region, without causing short circuit with the material outside ion implanted region.
The upper surface of epitaxial layer 2 is covered with the second passivation layer 62, for protecting the surface of epitaxial layer 2.
Such as Fig. 9, which further includes reading circuit plate 8 and multiple third indium bumps 9, each first indium
Salient point 71 connect one end of a third indium bump 9, third indium with the part of each second indium bump 72 protrusion epitaxial layer 2 respectively
The other end of salient point 9 is connected with reading circuit plate 8, and the first indium bump 71 each in this way and each second indium bump 72 are corresponding with
One third indium bump while can also be formed a focal plane arrays (FPA) with the realization electric signal communication of reading circuit plate 8
The semi-finished product of detector.
The invention also provides a kind of preparation methods of focal plane array detector, include the following steps：
S1, epitaxial layer 2 is covered on photosensitive substrate 1, the first doped region 31 of recess is formed in the lower surface of epitaxial layer 2,
Pixel hole 4 is opened up between the first adjacent doped region 31；
S2, the registration holes 5 for extending vertically through epitaxial layer 2 are opened up in the both sides of epitaxial layer 2；
S3, one passivating film 61 of lower surface growth regulation in epitaxial layer 2, and respectively positioned at the of 31 surface of the first doped region
The first contact hole 10 is opened up on one passivating film 61, is being opened up on the middle of first passivating film 61 on 4 surface of pixel hole
Two contact holes 11；
S4, respectively the first indium bump 71 of preparation and the second indium bump 72 in the first contact hole 10 and the second contact hole 11；
S5, the photosensitive substrate 1 of removal form the second doped region 32 of multiple recess in the upper surface of epitaxial layer 2.
Flip chip bonding step is further included after step s4, and flip chip bonding step includes：By each first indium bump 71 and each
Second indium bump 72 is connect respectively with a third indium bump 9, and third indium bump 9 is connected on reading circuit plate 8.
It is additionally included in two passivating film 62 of upper surface growth regulation of epitaxial layer 2 after step s 5.
The preparation method of this focal plane array detector proposed by the present invention passes through in the upper surface of epitaxial layer 2 and following table
Ion implanting forms PN junction structure alternatively up and down respectively in face, since the preparation method only needs that one will be prepared in the prior art
The ion implanting step of PN junction is repeated once in the other one side of epitaxial layer 2 again in a plane, realizes that process is easy.In addition,
There is indium bump so as to ensure the electric communication between indium bump on PN junction alternatively up and down to allow, needed in preparation process
Contact hole is opened up on 61 on first passivating film, which is also the common technology means in the field, so the focal plane array
The preparation method of row detector is easy to operate, but can make focal plane array by focal plane array detector prepared by this method
The spacing of the adjacent PN junction of row detector increases, and avoids the possibility of adjacent PN junction short circuit, makes the utilization rate of epitaxial film materials area
100% can be reached.Meanwhile the increase of PN junction area also can farthest absorb photon signal, make focal plane array detector
With higher signal-to-noise ratio, solve adjacent picture elements cross-talk hidden danger and acquisition photosignal it is weak the technical issues of.
By taking prepared by the HgCdTe infrared focus planes detection chip of 10 μm of pixel distances as an example, embodiment is as follows：
Such as Fig. 1, by the epitaxial wafer of the HgCdTe epitaxial layers 2 comprising photosensitive 1 and 10 μ m-thick of substrate after over cleaning, carry out from
Son injection photoetching, forms the first doped region 31 that multiple spacing are 20 μm in the lower surface of epitaxial layer 2.Figure point in reticle
As shown in Figure 10, the position including needing to open up pixel hole 4 below, the size of the first doped region 31 is 10 μm * μm to cloth, and
And ion implanting only is carried out to the first doped region 31 of odd number or even number position and forms the first PN junction.First doped region 31 and pixel
Hole 4 is in horizontal axis with being alternately distributed on the longitudinal axis so that finally formed first PN junction is alternately distributed with the second PN junction.
Then by photoetching and corrosion, pixel hole 4 alternately is opened up between the first adjacent doped region 31, as shown in Fig. 2,
The hole depth in pixel hole 4 is 9 μm, and it is 1 μm or so that guarantee, which opens up 2 remaining thickness of epitaxial layer behind pixel hole 4, so as to behind ensureing from
It can be with the 71 direct electrical contact of the first indium bump that is prepared in pixel hole 4 during the second doped region 32 that son injection is formed.Wherein,
The depth in pixel hole 4 is controlled by etching time.
By photoetching and corrosion, the registration holes 5 for extending vertically through epitaxial layer 2 are opened up in the both sides of epitaxial layer 2, such as Fig. 3 institutes
Show.It is passivated again in the ZnS of one layer of 100nm thickness of lower surface deposition growing of epitaxial layer 2, forms the first passivating film 61.So
It is general by photoetching and corrosion afterwards, respectively the first contact hole is opened up on the first passivating film 61 positioned at 31 surface of the first doped region
10, the second contact hole 11 is being opened up positioned at the middle of first passivating film 61 on 4 surface of pixel hole, as shown in Figure 4.Wherein,
The aperture of one contact hole 10 and the second contact hole 11 is 6 μm, which is less than the size (10 μm * μm) of the first doped region 31.
By first vice-minister's indium photoetching, the first indium bump 71 that thickness is 1 μm is prepared in the first contact hole 10；Stripping is gone
After glue, then second vice-minister's indium photoetching is carried out, the second indium bump 72 that thickness is 10 μm is prepared in the second contact hole 11.Pass through control
The thickness of indium bump processed prepares what the final bottom surface of rear first indium bump, 71 and second indium bump 72 was generally flush with, such as Fig. 5 institutes twice
Show.
Multiple third indium bumps 9 are prepared on reading circuit plate 8, by each first indium bump 71 and each second indium bump
72 carry out flip chip bonding with a third indium bump 9 respectively connect, as shown in Figure 6.
After completing flip chip bonding, photosensitive substrate 1 is removed by chemical corrosion liquid, exposes the upper surface of epitaxial layer 2, such as Fig. 7 institutes
Show.Then by photoetching and ion implanting, the second doped region 32 of multiple recess is formed in the upper surface of epitaxial layer 2, i.e., outside
The upper surface for prolonging layer 2 forms the second PN junction, as shown in Fig. 8, thus obtains including the first PN junction and second being distributed alternatively up and down
The focal plane array detector of PN junction structure.
Finally, the ZnS materials for playing the role of anti-reflection film of 150nm are plated in the upper surface of epitaxial layer 2, form the second passivation
Layer 62, that is, complete the preparation work of entire focal plane array detector, as shown in Fig. 9.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, all any modification, equivalent and improvement made all within the spirits and principles of the present invention etc., should all include
Within protection scope of the present invention.
Claims (9)
1. a kind of focal plane array detector, including epitaxial layer (2), the lower surface of the epitaxial layer (2) is provided with multiple recess
The first doped region (31), the interface of the epitaxial layer (2) and first doped region (31) is the first PN junction, and feature exists
In offering pixel hole (4) between adjacent first PN junction；
The lower surface of the epitaxial layer (2) is covered with the first passivating film (61), and positioned at the first doped region (31) surface
One passivating film (61) offers the first contact hole (10), positioned at the center of first passivating film (61) on pixel hole (4) surface
Between offer the second contact hole (11)；
The first indium bump (71) and the second indium are separately filled in first contact hole (10) and second contact hole (11)
Salient point (72), first indium bump (71) and the prominent epitaxial layer (2) of second indium bump (72)；
The upper surface of the epitaxial layer (2) is provided with the second doped region (32) of multiple recess, second doped region (32) with
Second indium bump (72) connects one to one, and the interface of the epitaxial layer (2) and second doped region (32) is the
Two PN junctions.
2. focal plane array detector as described in claim 1, which is characterized in that first indium bump (71) and described the
The bottom of prominent epitaxial layer (2) part of two indium bumps (72) is in the same plane.
3. focal plane array detector as described in claim 1, which is characterized in that have in the both sides of the epitaxial layer (2)
Extend vertically through the registration holes (5) of the epitaxial layer (2).
4. focal plane array detector as described in claim 1, which is characterized in that adjacent first doped region (31) with
Projection of second doped region (32) in the upper surface of the epitaxial layer (2) is misaligned.
5. focal plane array detector as described in claim 1, which is characterized in that the upper surface covering of the epitaxial layer (2)
There is the second passivation layer (62).
6. such as Claims 1 to 5 any one of them focal plane array detector, which is characterized in that further include reading circuit plate
(8) and multiple third indium bumps (9), each first indium bump (71) and each second indium bump (72) it is prominent described in
The part of epitaxial layer (2) connects one end of a third indium bump (9), the other end of the third indium bump (9) respectively
It is connected with the reading circuit plate (8).
7. a kind of preparation method of focal plane array detector, which is characterized in that include the following steps：
S1, epitaxial layer (2) is covered on photosensitive substrate (1), the first doping of recess is formed in the lower surface of the epitaxial layer (2)
Area (31) opens up pixel hole (4) between adjacent first doped region (31)；
S2, the registration holes (5) for extending vertically through the epitaxial layer (2) are opened up in the both sides of the epitaxial layer (2)；
S3, one passivating film of lower surface growth regulation (61) in the epitaxial layer (2), and positioned at the first doped region (31) table
The first contact hole (10) is opened up on first passivating film (61) in face, in the first passivating film positioned at pixel hole (4) surface
(61) middle opens up the second contact hole (11)；
S4, the first indium bump (71) and second is prepared in first contact hole (10) and second contact hole (11) respectively
Indium bump (72)；
S5, the removal photosensitive substrate (1), the second doped region of multiple recess is formed in the upper surface of the epitaxial layer (2)
(32)。
8. the preparation method of focal plane array detector as claimed in claim 7, which is characterized in that after the step S4
Flip chip bonding step is further included, the flip chip bonding step includes：It will each first indium bump (71) and each second indium
Salient point (72) is connect respectively with a third indium bump (9), and the third indium bump (9) is connected on reading circuit plate (8).
9. the preparation method of focal plane array detector as claimed in claim 7, which is characterized in that after the step S5
It is additionally included in two passivating film of upper surface growth regulation (62) of the epitaxial layer (2).
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| CN114512554A (en) * | 2022-02-14 | 2022-05-17 | 浙江拓感科技有限公司 | Preparation method of table-board type infrared detector indium dot matrix, infrared detector, focal plane array chip and reading circuit chip |
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| CN101527308A (en) * | 2009-04-10 | 2009-09-09 | 中国科学院上海技术物理研究所 | Plane-structure InGaAs array infrared detector |
| CN101859849A (en) * | 2009-04-10 | 2010-10-13 | 亿光电子工业股份有限公司 | Light emitting diode device and method for forming the same |
| CN107342302A (en) * | 2017-03-28 | 2017-11-10 | 友达光电股份有限公司 | Micro light emitting diode display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101527308A (en) * | 2009-04-10 | 2009-09-09 | 中国科学院上海技术物理研究所 | Plane-structure InGaAs array infrared detector |
| CN101859849A (en) * | 2009-04-10 | 2010-10-13 | 亿光电子工业股份有限公司 | Light emitting diode device and method for forming the same |
| CN107342302A (en) * | 2017-03-28 | 2017-11-10 | 友达光电股份有限公司 | Micro light emitting diode display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114512554A (en) * | 2022-02-14 | 2022-05-17 | 浙江拓感科技有限公司 | Preparation method of table-board type infrared detector indium dot matrix, infrared detector, focal plane array chip and reading circuit chip |
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